CN109524503A - A kind of boring method of the electrode fairlead of photovoltaic cell - Google Patents
A kind of boring method of the electrode fairlead of photovoltaic cell Download PDFInfo
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- CN109524503A CN109524503A CN201811217093.8A CN201811217093A CN109524503A CN 109524503 A CN109524503 A CN 109524503A CN 201811217093 A CN201811217093 A CN 201811217093A CN 109524503 A CN109524503 A CN 109524503A
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- 238000005553 drilling Methods 0.000 claims abstract description 46
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- 238000000605 extraction Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 41
- 239000005329 float glass Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 15
- 239000005341 toughened glass Substances 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- 238000006124 Pilkington process Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
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- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
The present invention relates to a kind of boring methods of the electrode fairlead of photovoltaic cell；Include: S1: selecting the glassy layer of setting electrode fairlead from the glassy layer of the photovoltaic cell as setting layer and determines the setting position of electrode fairlead；S2: the parameter of the electrode fairlead is determined according to the thickness of the setting layer；S3: it is drilled according to the setting position of the electrode fairlead and the parameter of electrode fairlead using double-face drilling technique.Setting layer and position have been selected respectively, then the parameter of electrode fairlead has been determined, have then been drilled using double-face drilling technique；Motor draws hole site and ensure that the extraction of internal positive and negative anodes, do not influence the intensity of glassy layer, facilitate the connection of external equipment, and will not influence battery daylight rate；Double-face drilling technique further reduced destruction of the boring procedure for glassy layer, avoids glass in boring procedure and generates slight crack or rupture.
Description
Technical field
The present invention relates to photovoltaic cell technical field more particularly to a kind of drilling sides of the electrode fairlead of photovoltaic cell
Method.
Background technique
Solar battery with its high conversion efficiency, raw materials consumption is few, production cost is low the features such as, increasingly by people's
Concern.The material of flexible substrates is mostly used in industrial production at present, the production of film is such as carried out using stainless-steel roll.In order to expand
The application field of film assembly, people start to turn to center of gravity using the rigid basements such as glass production film assembly, with satisfaction pair
The application of the special dimensions such as BIPV, roof power generation.
Currently, industry joins the string that technology realizes battery using internal poles for the Thinfilm solar cell assembly of substrate of glass
The positive and negative anodes extraction of battery component will be carried out subsequent production work by certain mode this requires subsequent by parallel connection
Skill.The positive and negative anodes of battery component, which are drawn, to be needed to realize by means of bore process, however if by the drilling skill in other industry
Art directly apply to rashly photovoltaic industry production in, not only result in glass fragment, chipping, also will cause product transformation efficiency and
The reduction in service life, or even generate and scrap.
Accordingly, it is desirable to provide the boring method of the electrode fairlead of photovoltaic cell a kind of solves the deficiencies in the prior art.
Summary of the invention
In order to solve the problems in the prior art, the present invention provides a kind of drilling sides of the electrode fairlead of photovoltaic cell
Method.
The present invention provides a kind of boring methods of the electrode fairlead of photovoltaic cell；The method includes the following steps:
S1: the glassy layer of setting electrode fairlead is selected from the glassy layer of the photovoltaic cell as setting layer and true
The setting position of fixed electrode fairlead；
S2: the parameter of the electrode fairlead is determined according to the thickness of the setting layer；
S3: it is carried out according to the setting position of the electrode fairlead and the parameter of electrode fairlead using double-face drilling technique
Drilling.
Further, the electrode fairlead includes positive fairlead and cathode fairlead；
The glassy layer of the photovoltaic cell includes:
It is deposited with the float glass substrate of film and the tempered glass for encapsulation, the float glass substrate and the steel
Change glass gluing.
Further, the glassy layer conduct that setting electrode fairlead is selected from the glassy layer of the photovoltaic cell
Setting layer includes: to select float glass substrate as setting layer；
The setting position of the determining electrode fairlead includes: that the position of the electrode fairlead is set to the float glass
The edge of substrate, the position of the electrode fairlead are set to the position of non-deposition film.
Further, the setting position of the determining electrode fairlead further include:
The axis of the anode fairlead is parallel with cathode extraction axially bored line；
The anode fairlead axle center is 10-50mm at a distance from cathode fairlead axle center.
Further, the thickness according to the setting layer determines that the parameter of the electrode fairlead includes:
d2≥2d3；
The d2The nearest vertical range in the float glass substrate edge close with it for the inner wall of electrode fairlead；d3
For the thickness of the float glass substrate.
Further, the thickness according to the setting layer determines the parameter of the electrode fairlead further include:
The anode fairlead is equal with the diameter of the cathode fairlead；The anode fairlead and the cathode are drawn
The diameter in hole is greater than the thickness of the float glass substrate.
Further, described that two-sided brill is used according to the setting position of the electrode fairlead and the parameter of electrode fairlead
Hole technique carries out drilling
Select the matched drill bit of radius of radius and the electrode fairlead；
Select the drill bit of the wolfram steel material of the material matching of material and the float glass substrate；
Double-face drilling is carried out using the drilling device for having two coaxial opposite drill bits.
Further, the matched drill bit of radius of the selection radius and the electrode fairlead includes:
The first drill bit and the second drill bit are selected respectively；The radius phase of the radius of first drill bit and the electrode fairlead
Deng the big 0.05-0.15mm of radius of electrode fairlead described in the radius ratio of second drill bit.
Further, described to include: using the drilling device progress double-face drilling for having two coaxial opposite drill bits
It is first drilled using the second drill bit, institute's drilling depth is less than the thickness of the float glass substrate；
It is drilled again using the first drill bit, institute's drilling depth is greater than the thickness of the float glass substrate.
Further, the drilling device is respectively equipped with cooling component and dust suction subassembly around the drill bit.
Technical solution of the present invention has the advantages that compared with the immediate prior art
The boring method of the electrode fairlead for the photovoltaic cell that technical solution provided by the invention provides, has selected to set respectively
Layer and position are set, the parameter of electrode fairlead has been determined further according to the thickness of setting layer, has then been carried out using double-face drilling technique
Drilling；Motor draws hole site and ensure that the extraction of internal positive and negative anodes, do not influence the intensity of glassy layer, facilitate the company of external equipment
It connects, and will not influence battery daylight rate；Double-face drilling technique further reduced destruction of the boring procedure for glassy layer, keep away
Exempt from glass in boring procedure and generates slight crack or rupture.
Detailed description of the invention
Fig. 1 is the photovoltaic cell sectional view in the embodiment of the present invention；
Fig. 2 is the position view of electrode fairlead in the embodiment of the present invention；
Fig. 3 is the schematic diagram of double-face drilling technique in the embodiment of the present invention；
Fig. 4 is the cross-sectional view of electrode fairlead in the embodiment of the present invention.
Wherein, 1- float glass substrate；2- tempered glass；3- film；4- anode；5- cathode；6- electrode fairlead；7- is bored
Hole equipment；8- drill bit；9- cooling component；10- dust suction subassembly；11- second is open；12- first is open；13- axis.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
As shown in Figures 1 to 4, the present invention provides a kind of boring methods of the electrode fairlead of photovoltaic cell；The side
Method includes the following steps:
S1: the glassy layer that setting electrode fairlead 6 is selected from the glassy layer of the photovoltaic cell is used as setting layer simultaneously
Determine the setting position of electrode fairlead 6；
S2: the parameter of the electrode fairlead 6 is determined according to the thickness of the setting layer；
S3: according to the electrode fairlead 6 setting position and electrode fairlead 6 parameter using double-face drilling technique into
Row drilling.
In the present embodiment, the electrode fairlead 6 includes positive fairlead and cathode fairlead.
In the present embodiment, the photovoltaic cell is copper-indium-galliun-selenium film solar cell, crystal silicon battery, HIT battery, calcium
The glassy layer of titanium ore battery or gallium arsenide cells, the battery includes:
It is deposited with the float glass substrate 1 of film 3 and the tempered glass 2 for encapsulation, the float glass substrate 1 and institute
State the fitting of tempered glass 2；
The Mo layer material of the bottom is anode 4 in film, and the tco layer material of top is cathode 5, then by copper strips or aluminium
One end of band is sticked together by certain bonding way and battery plus-negative plate material, then the other end pass through positive fairlead and
Cathode fairlead is drawn.
The glassy layer that setting electrode fairlead 6 is selected from the glassy layer of the photovoltaic cell is as setting layer packet
It includes: selecting float glass substrate 1 as setting layer；
The all more common float glass substrate 1 of the thickness of the tempered glass 2, hardness is big, therefore electrode fairlead 6 is arranged
Drilling difficulty is reduced in float glass substrate 1；And drill on tempered glass 2, connect the dress such as subsequent lead, terminal box
A part of sunlight can be sheltered from by postponing, and reduce the light-receiving surface of entire component, and then influence whether the generating efficiency of battery, and
Electrode fairlead 6 is set to float glass substrate 1 and just avoids drawbacks described above；And electrode fairlead 6 is set to float glass process
Substrate of glass 1 also greatly promotes the installation aesthetics of subsequent lead and terminal box etc..
The setting position of the determining electrode fairlead 6 includes: that the position of the electrode fairlead 6 is set to the float glass process glass
The edge of glass substrate 1, the position of the electrode fairlead 6 are set to the position of non-deposition film 3；Float glass process glass described in the present embodiment
The length of glass substrate 1 is respectively 1500mm, 1000mm and 3mm；Positive fairlead and the cathode fairlead may be disposed at
Long side edge may also set up in short side edge, and the factors such as size of circuit, production equipment can be specifically joined according to the pole of inside battery
It determines, is provided close to short side edge in the present embodiment.
The setting position of the determining electrode fairlead 6 further include:
The axis of the anode fairlead is parallel with cathode extraction axially bored line；
The anode fairlead axle center is 10-50mm at a distance from cathode fairlead axle center.
If the distance in positive fairlead and cathode fairlead axle center is too small, it be easy to cause and occurs contacting between two electrodes
May, it will lead to battery short circuit；If the distance in positive fairlead and cathode fairlead axle center is too big, it is easy continued access wire box after the meeting and pacifies
Dress causes certain difficulty, such as causes terminal box size larger, and terminal box filler amount ratio is more, causes the increase of cost, because
This specifically can rationally determine distance according to the radius of electrode fairlead 6 from 10-50mm.
The thickness according to the setting layer determines that the parameter of the electrode fairlead 6 includes:
d2≥2d3；
The d2The nearest vertical range in float glass substrate 1 edge close with it for the inner wall of electrode fairlead 6；
d3For the thickness of the float glass substrate 1.
The inner wall of electrode fairlead 6 and the nearest vertical range d in its close 1 edge of float glass2It is too small to be easy
It causes glass edge chipping in boring procedure, be crushed, entire product will be scrapped, d2≥2d3It then can effectively avoid above-mentioned danger
The occurrence of dangerous.
The thickness according to the setting layer determines the parameter of the electrode fairlead 6 further include:
The anode fairlead is equal with the diameter of the cathode fairlead；The anode fairlead and the cathode are drawn
The diameter in hole is greater than the thickness of the float glass substrate 1.
The thickness that the diameter of positive fairlead and cathode fairlead is greater than the float glass substrate can effectively avoid boring
Head directly drills entire glass and a series of subtle slight cracks of bring, and can be avoided the stability in aperture.
It is described that double-face drilling technique is used according to the setting position of the electrode fairlead 6 and the parameter of electrode fairlead 6
Carrying out drilling includes:
Select the matched drill bit 8 of radius of radius and the electrode fairlead 6；
Select the drill bit 8 of the material matching of material and the float glass substrate 1；
Double-face drilling is carried out using the drilling device 7 for having two coaxial opposite drill bits 8.
It is described selection radius and the electrode fairlead 6 the matched drill bit 8 of radius include:
The first drill bit and the second drill bit are selected respectively；The radius of the radius of first drill bit and the electrode fairlead 6
It is equal, the big 0.05-0.15mm of radius of electrode fairlead 6 described in the radius ratio of second drill bit；Electrode in the present embodiment
The radius of fairlead 6 and the first drill bit is respectively 2.0mm, and the radius of the second drill bit is 2.1mm.
First drill bit and second drill bit are concentric, after capable of guaranteeing double-face drilling, axis one that two sides is drilled
It causes, to effectively prevent the case where filling perforation caused by axis runout can not fill up, considerably increases the sealing performance of battery.
The selection material and the drill bit 8 of the material matching of the float glass substrate 1 include:
Select the drill bit 8 of wolfram steel material.
The wearability of wolfram steel is very high, and cheap, and performance is stablized；The glass that can effectively avoid diamond boring from occurring
It cracks, the problem of cost is excessively high and later maintenance is not easy and the problem of the glass melting deformation that laser drill occurs.
It is described to include: using the progress double-face drilling of drilling device 7 for having two coaxial opposite drill bits 8
It is first drilled using the second drill bit, institute's drilling depth is less than the thickness of the float glass substrate 1；
It is drilled again using the first drill bit, institute's drilling depth is greater than the thickness of the float glass substrate 1.
Either in substrate of glass, which face drills, as long as all not can guarantee institute in such a way that one side drills
Obtained aperture edge is completely smooth, this is related to the effect of subsequent technique.It is drilled using one side, the another of glass will be destroyed
Face, aperture can not form a good funnel shaped.Aperture in irregular shape will cause in subsequent process for filling hole
Part can not be filled up and generate bubble, and the service life of entire component is influenced；And use double-face drilling of the invention can be double
Face is respectively formed preferable funnel-shaped opening, i.e. the second opening 11 and the first bit bore mistake that the second bit bore process is formed
The first opening 12 that journey is formed.
The drilling device 7 is respectively equipped with cooling component 9 and dust suction subassembly 10 around the drill bit 8.
In boring procedure, cooling component 9 can eject cooling water and cool down to boring sites in curing, and moment is avoided to produce
Raw heat causes glass breaking, and dust suction subassembly 10 can siphon away the glass chip that drilling generates in time.
It should be noted that, in this document, the relational terms of such as " first " and " second " or the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.
It is understood that embodiments described herein can with hardware, software, firmware, middleware, microcode or its
Combination is to realize.For hardware realization, processing unit be may be implemented in one or more specific integrated circuit (Application
Specific Integrated Circuits, ASIC), digital signal processor (Digital Signal Processing,
DSP), digital signal processing appts (DSP Device, DSPD), programmable logic device (Programmable Logic
Device, PLD), field programmable gate array (Field-Programmable Gate Array, FPGA), general processor,
In controller, microcontroller, microprocessor, other electronic units for executing herein described function or combinations thereof.
For software implementations, the techniques described herein can be realized by executing the unit of function described herein.Software generation
Code is storable in memory and is executed by processor.Memory can in the processor or portion realizes outside the processor.
Those of ordinary skill in the art may be aware that list described in conjunction with the examples disclosed in the embodiments of the present disclosure
Member and algorithm steps can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are actually
It is implemented in hardware or software, the specific application and design constraint depending on technical solution.Professional technician
Each specific application can be used different methods to achieve the described function, but this realization is it is not considered that exceed
The scope of the present invention.
In embodiment provided herein, it should be understood that disclosed device and method can pass through others
Mode is realized.For example, the apparatus embodiments described above are merely exemplary, for example, the division of the unit, only
A kind of logical function partition, there may be another division manner in actual implementation, for example, multiple units or components can combine or
Person is desirably integrated into another system, or some features can be ignored or not executed.Another point, shown or discussed is mutual
Between coupling, direct-coupling or communication connection can be through some interfaces, the INDIRECT COUPLING or communication link of device or unit
It connects, can be electrical property, mechanical or other forms.
It, can also be in addition, the functional units in various embodiments of the present invention may be integrated into one processing unit
It is that each unit physically exists alone, can also be integrated in one unit with two or more units.
It, can be with if the function is realized in the form of SFU software functional unit and when sold or used as an independent product
It is stored in a computer readable storage medium.Based on this understanding, the technical solution of the embodiment of the present invention is substantially
The part of the part that contributes to existing technology or the technical solution can embody in the form of software products in other words
Come, which is stored in a storage medium, including some instructions are used so that a computer equipment (can
To be personal computer, server or the network equipment etc.) execute all or part of each embodiment the method for the present invention
Step.And storage medium above-mentioned includes: that USB flash disk, mobile hard disk, ROM, RAM, magnetic or disk etc. are various can store program
The medium of code.
It should be noted that the terms "include", "comprise" or its any other variant are intended to the packet of nonexcludability
Contain, so that the process, method, article or equipment for including a series of elements not only includes those elements, but also including
Other elements that are not explicitly listed, or further include for elements inherent to such a process, method, article, or device.
In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including the element
Process, method, article or equipment in there is also other identical elements.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of boring method of the electrode fairlead of photovoltaic cell；It is characterized in that, the method includes the following steps:
S1: the glassy layer of setting electrode fairlead (6) is selected from the glassy layer of the photovoltaic cell as setting layer and true
The setting position of fixed electrode fairlead (6)；
S2: the parameter of the electrode fairlead (6) is determined according to the thickness of the setting layer；
S3: according to the electrode fairlead (6) setting position and electrode fairlead (6) parameter using double-face drilling technique into
Row drilling.
2. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 1；It is characterized in that, the electricity
Pole fairlead (6) includes positive fairlead and cathode fairlead；
The glassy layer of the photovoltaic cell includes:
Be deposited with the float glass substrate (1) of film and the tempered glass (2) for encapsulation, the float glass substrate (1) with
Tempered glass (2) fitting.
3. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 2；It is characterized in that,
The glassy layer that setting electrode fairlead (6) is selected from the glassy layer of the photovoltaic cell is as setting layer packet
It includes: selecting float glass substrate (1) as setting layer；
The setting position of the determining electrode fairlead (6) includes: that the position of the electrode fairlead (6) is set to the float glass process glass
The edge of glass substrate (1), the position of the electrode fairlead (6) are set to the position of non-deposition film.
4. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 3；It is characterized in that, described true
The setting position of fixed electrode fairlead (6) further include:
The axis of the anode fairlead is parallel with cathode extraction axially bored line；
The anode fairlead axle center is 10-50mm at a distance from cathode fairlead axle center.
5. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 3；It is characterized in that, described
Determine that the parameter of the electrode fairlead (6) includes: according to the thickness of the setting layer
d2≥2d3；
The d2The nearest vertical range in float glass substrate (1) edge close with it for the inner wall of electrode fairlead (6)；
d3For the thickness of the float glass substrate (1).
6. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 3；It is characterized in that, described
The parameter of the electrode fairlead (6) is determined according to the thickness of the setting layer further include:
The anode fairlead is equal with the diameter of the cathode fairlead；The anode fairlead and the cathode fairlead
Diameter is greater than the thickness of the float glass substrate (1).
7. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 3；It is characterized in that, described
Drilling packet is carried out using double-face drilling technique according to the setting position of the electrode fairlead (6) and the parameter of electrode fairlead (6)
It includes:
Select the matched drill bit of radius (8) of radius and the electrode fairlead (6)；
Select the drill bit (8) of the wolfram steel material of the material matching of material and the float glass substrate (1)；
Double-face drilling is carried out using the drilling device (7) for having two coaxial opposite drill bit (8).
8. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 7；It is characterized in that, the choosing
It selects radius and the matched drill bit of radius (8) of the electrode fairlead (6) includes:
The first drill bit and the second drill bit are selected respectively；The radius phase of the radius of first drill bit and the electrode fairlead (6)
Deng the big 0.05-0.15mm of radius of electrode fairlead (6) described in the radius ratio of second drill bit.
9. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 8；It is characterized in that, described adopt
Carrying out double-face drilling with the drilling device (7) for having two coaxial opposite drill bit (8) includes:
It is first drilled using the second drill bit, institute's drilling depth is less than the thickness of the float glass substrate (1)；
It is drilled again using the first drill bit, institute's drilling depth is greater than the thickness of the float glass substrate (1).
10. a kind of boring method of the electrode fairlead of photovoltaic cell according to claim 7；It is characterized in that, described
Cooling component (9) and dust suction subassembly (10) are respectively equipped with around drilling device (7) Yu Suoshu drill bit (8).
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| CN1603265A (en) * | 2003-10-04 | 2005-04-06 | 大连路明发光科技股份有限公司 | Long persistence luminescent glass and manufacturing method thereof |
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