CN109509813A - 一种无掩膜的p型全背电极接触晶硅太阳电池的制备方法 - Google Patents
一种无掩膜的p型全背电极接触晶硅太阳电池的制备方法 Download PDFInfo
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Abstract
本发明涉及太阳电池技术领域，尤其是一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法；包括以下步骤：制绒；沉积隧穿氧化硅和本征多晶硅薄膜，磷离子图案化注入；然后刻蚀：采用TMAH溶液，浓度为1%‑2%，溶液温度25‑80℃，刻蚀掉非n+区的本征多晶硅层和正面的本征多晶硅层；紧接着在1‑5%的HF溶液中浸泡1‑2分钟去除该区域的隧穿氧化层SiO2；然后退火：激活离子注入当中的磷原子，从而在硅中形成均匀的掺杂，以形成pn结区；最后去除pn结区表面的磷硅玻璃、沉积钝化层、激光开膜、丝网印刷；本发明提出的方法，生产流程简单，电池效率高，无硼扩散等昂贵工艺，可以极大的降低全背电极接触太阳电池的成本，且适合大规模产业化应用。
Description
技术领域
本发明涉及太阳电池技术领域，尤其是一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法。
背景技术
IBC（Inter digitated back contact指交叉背接触）电池，是指电池正面无电极，正负两极金属栅线呈指状交叉排列于电池背面。IBC电池最大的特点是PN结和金属接触都处于电池的背面，正面没有金属电极遮挡的影响因此具有更高的短路电流Jsc，同时背面可以容许较宽的金属栅线来降低串联电阻Rs从而提高填充因子FF；加上电池前表面场（FrontSurface Field, FSF）以及良好钝化作用带来的开路电压增益，使得这种正面无遮挡的电池不仅转换效率高，而且看上去更美观，同时，全背电极的组件更易于装配。IBC电池是目前实现高效晶体硅电池的技术方向之一。
较之传统太阳电池，IBC电池的工艺流程要复杂得多。其关键问题，是如何在电池背面制备出呈叉指状间隔排列的P区和N区，以及在其上面分别形成金属化接触和栅线。因此，制备过程中需要多次掩膜工艺，使得其工艺流程繁琐复杂，成本居高不下。
发明内容
本发明的目的是：提供一种成本低，适用于工业化生产的无掩膜的P型全背电极接触晶硅太阳电池的制备方法。
为解决上述技术问题，本发明采用的技术方案如下：
一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法，所述制备方法包括以下步骤：
（1）制绒：以P型单晶硅片作为硅衬底，首先进行制绒处理，所用的溶液通常为KOH溶液，温度为80℃；然后在2-5%的HF溶液中进行清洗，清洗干净硅片表面；
（2）沉积隧穿氧化硅和本征多晶硅薄膜：在硅片的两面沉积一层薄薄的隧穿氧化硅薄膜，厚度控制<2nm，沉积温度在500-700℃之间，紧接着生长一层本征多晶硅层，厚度>200nm，生长温度为400-700℃之间；
（3）磷离子图案化注入：采用磷离子注入，在需要形成n+区的区域进行磷离子注入，使得本征多晶硅薄膜变成掺杂的n型多晶硅薄膜；同时离子注入会在表面形成一层薄薄的n型非晶硅层；
（4）刻蚀：采用TMAH溶液，浓度为1%--2%，溶液温度25-80℃，刻蚀掉背面n+区外的本征多晶硅薄膜和正面的本征多晶硅薄膜；最后在1-5%的HF溶液中浸泡1-2分钟去除该区域的隧穿氧化硅薄膜；
（5）退火：激活离子注入当中的磷原子，使得n型多晶硅薄膜形成均匀的掺杂，以形成pn结区；
（6）去除pn结区表面的磷硅玻璃：在1-5%的HF溶液中浸泡1-5分钟去除退火过程中形成的磷硅玻璃；
（7）钝化层：对n+区，匹配的钝化膜为SiN或者SiO2/SiN叠层膜；p区，匹配的钝化膜为AlO/SiN叠层；
（8）激光开膜：激光烧蚀p区的氧化铝/氮化硅薄膜以便于形成局域铝背场；
（9）丝网印刷：背面按照网版图形进行丝网印刷、烧结时，浆料宽度控制在小于50μm，高度大于5μm；烧结峰值温度在760℃左右，时间40秒。
进一步的，所述步骤（3）中的掩膜层不需要额外单独生长，而是利用离子注入过程中形成的非晶硅层作为掩膜层，简化电池制备工艺和成本。
进一步的，所述步骤（5）中的退火温度700-900℃，退火时间10-60min，退火气氛N2，或N2和O2混合气氛。
进一步的，所述步骤（7）中SiO2厚度1-10nm，AlO厚度1-50nm，SiN厚度50-200nm。
采用本发明的技术方案的有益效果是：
本发明利用离子注入后形成的非晶硅层作为掩膜层，不需要额外生长掩膜层，替代了传统的氧化硅或者氮化硅掩膜；同时在去除本征多晶硅薄膜的同时，会在p区和n+区之间形成高度差，区分开pn结区和背场区，而无需激光刻蚀开膜，大大简化了全背电极接触太阳电池的制备工艺流程，降低成本。同时，pn结区采用掺杂多晶硅/隧穿氧化硅叠层薄膜，与金属银电极接触后，由于有n型多晶硅层的阻挡，因此金属不会穿透到pn结，从而完全消除金属区的复合。同时n型多晶硅薄膜有良好的导电性，因此仍然可以形成良好的欧姆接触，最终大大提高电池效率。
本发明提出的方法，生产流程简单，电池效率高，无硼扩散等昂贵工艺，可以极大的降低全背电极接触太阳电池的成本，且适合大规模产业化应用。
与传统全背电极接触晶硅太阳电池不同，退火步骤中的pn结不是采用硼扩散形成，而是通过n型多晶硅薄膜形成，有良好的导电性，因此仍然可以形成良好的欧姆接触，最终大大提高电池效率。
附图说明
图1为本发明中无掩膜的P型全背电极接触晶硅太阳电池的结构示意图。
图中：1-氧化铝，2-氮化硅， 3-pn结区（n型多晶硅薄膜），4-遂穿氧化硅薄膜，5-铝背场，6-银电极。
具体实施方式
现在结合附图对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。
图1为本发明中无掩膜的P型全背电极接触晶硅太阳电池的结构示意图。
一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法，包括以下步骤：
（1）制绒：以P型单晶硅片作为硅衬底，首先进行制绒处理，所用的溶液通常为KOH溶液，KOH溶液一般按照KOH：添加剂：H2O=20:3:160的比例配制，温度为80℃。然后在2-5%的HF溶液中进行清洗，清洗干净硅片表面；
（2）沉积隧穿氧化硅和本征多晶硅薄膜，采用LPCVD设备，在硅片的两面沉积一层薄薄的隧穿SiO2薄膜4，厚度控制<2nm，沉积温度在500-700℃之间，紧接着生长一层本征多晶硅层，厚度>200nm，生长温度为400-700℃之间；
（3）磷离子图案化注入：采用磷离子注入，在需要形成n+区的区域进行磷离子注入，使得本征多晶硅薄膜变成掺杂的n型多晶硅薄膜3。同时离子注入会在表面形成一层薄薄的n型非晶硅层，这一层可以作为掩膜层，阻挡后面的刻蚀液的腐蚀，保护其下面的n型多晶硅/氧化硅薄膜；根据文献可知，经过离子注入处理后，会有所谓的离子轰击减缓刻蚀IBRE (ion-bombardment-retarded etching )效应，即在表面形成一层非晶硅层（amorphoussilicon），该层非晶硅抗有机碱刻蚀；
（4）刻蚀：采用TMAH溶液，浓度为1%-2%，溶液温度25-80℃，刻蚀掉背面n+区外的本征多晶硅薄膜和正面的本征多晶硅薄膜；n+区因为有离子注入形成的非晶硅层，不会被TMAH刻蚀掉，从而被保留；而其他区域则被TMAH刻蚀掉。最后在1-5%的HF溶液中浸泡1-2分钟去除该区域的隧穿氧化硅薄膜4；
（5）退火：激活离子注入当中的磷原子，使得n型多晶硅薄膜3形成均匀的掺杂，以形成pn结区3；退火温度700-900℃，退火时间10-60min，退火气氛N2，或N2和O2混合气氛。
（6）去除pn结区3表面的磷硅玻璃：在1-5%的HF溶液中浸泡1-5分钟去除退火过程中形成的磷硅玻璃；
（7）钝化层：对n+区，匹配的钝化膜为SiN膜2或者SiO2/SiN叠层膜；p区，匹配的钝化膜为AlO/SiN叠层。SiO2厚度1-10nm， AlO厚度1-50nm，SiN厚度50-200nm；
（8）激光开膜：激光烧蚀p区的氧化铝1/氮化硅2薄膜以便于形成局域铝背场5；
（9）丝网印刷：背面按照网版图形进行丝网印刷、烧结。pn结区3采用银浆，p区采用类似于PERC电池的背银+铝浆结构，铝浆用于形成局域铝背场5，背银（银电极6）用于焊接。浆料宽度控制在小于50μm，高度大于5μm；烧结峰值温度在760℃左右，时间40秒。
上述方法制得的无掩膜的P型全背电极接触晶硅太阳电池的结构示意图如图1。
所属领域的普通技术人员应该能够理解的是，
本发明利用离子注入后形成的非晶硅层作为掩膜层，不需要额外生长掩膜层，替代了传统的氧化硅或者氮化硅掩膜；同时在去除本征多晶硅薄膜的同时，会在p区和n+区之间形成高度差，区分开pn结区和背场区，而无需激光刻蚀开膜，大大简化了全背电极接触太阳电池的制备工艺流程，降低成本。同时，pn结区采用掺杂多晶硅/隧穿氧化硅叠层薄膜，与金属银电极接触后，由于有n型多晶硅层的阻挡，因此金属不会穿透到pn结，从而完全消除金属区的复合。同时n型多晶硅薄膜有良好的导电性，因此仍然可以形成良好的欧姆接触，最终大大提高电池效率。
本发明提出的方法，生产流程简单，电池效率高，无硼扩散等昂贵工艺，可以极大的降低全背电极接触太阳电池的成本，且适合大规模产业化应用。
以上述依据本发明的理想实施例为启示，通过上述的说明内容，相关工作人员完全可以在不偏离本项发明技术思想的范围内，进行多样的变更以及修改。凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。本项发明的技术性范围并不局限于说明书上的内容，必须要根据权利要求范围来确定其技术性范围。
Claims (4)
1.一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法，其特征在于：所述制备方法包括以下步骤：
（1）制绒：以P型单晶硅片作为硅衬底，首先进行制绒处理，所用的溶液通常为KOH溶液，温度为80℃；然后在2-5%的HF溶液中进行清洗，清洗干净硅片表面；
（2）沉积隧穿氧化硅和本征多晶硅薄膜：在硅片的两面沉积一层薄薄的隧穿氧化硅薄膜，厚度控制<2nm，沉积温度在500-700℃之间，紧接着生长一层本征多晶硅层，厚度>200nm，生长温度为400-700℃之间；
（3）磷离子图案化注入：采用磷离子注入，在需要形成n+区的区域进行磷离子注入，使得本征多晶硅薄膜变成掺杂的n型多晶硅薄膜；同时离子注入会在表面形成一层薄薄的n型非晶硅层；
（4）刻蚀：采用TMAH溶液，浓度为1%-2%，溶液温度25-80℃，刻蚀掉背面n+区外的本征多晶硅薄膜和正面的本征多晶硅薄膜；最后在1-5%的HF溶液中浸泡1-2分钟去除该区域的隧穿氧化硅薄膜；
（5）退火：激活离子注入当中的磷原子，使得n型多晶硅薄膜形成均匀的掺杂，以形成pn结区；
（6）去除pn结区表面的磷硅玻璃：在1-5%的HF溶液中浸泡1-5分钟去除退火过程中形成的磷硅玻璃；
（7）钝化层：对n+区，匹配的钝化膜为SiN或者SiO2/SiN叠层膜；p区，匹配的钝化膜为AlO/SiN叠层；
（8）激光开膜：激光烧蚀p区的氧化铝/氮化硅薄膜以便于形成局域铝背场；
（9）丝网印刷：背面按照网版图形进行丝网印刷、烧结时，浆料宽度控制在小于50μm，高度大于5μm；烧结峰值温度为760±2℃，时间40秒。
2.根据权利要求1所述的一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法，其特征在于：所述步骤（4）中的刻蚀液为低浓度的TMAH溶液，浓度为1%-2%。
3.根据权利要求1所述的一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法，其特征在于：所述步骤（5）中的退火温度700-900℃，退火时间10-60min，退火气氛N2，或N2和O2混合气氛。
4.根据权利要求1所述的一种无掩膜的P型全背电极接触晶硅太阳电池的制备方法，其特征在于：所述步骤（7）中SiO2厚度1-10nm，AlO厚度1-50nm，SiN厚度50-200nm。
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