CN109500505A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatus Download PDFInfo
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- CN109500505A CN109500505A CN201810155185.1A CN201810155185A CN109500505A CN 109500505 A CN109500505 A CN 109500505A CN 201810155185 A CN201810155185 A CN 201810155185A CN 109500505 A CN109500505 A CN 109500505A
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- laser
- object lens
- semiconductor substrate
- relative
- laser beam
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0823—Devices involving rotation of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
Embodiments of the present invention provide a kind of semiconductor manufacturing apparatus, can inhibit the scattering of laser beam, and can process semiconductor substrate to high-quality in relative short time.The semiconductor manufacturing apparatus of embodiment by forming modified region along cutting preset lines to semiconductor substrate illumination laser on a semiconductor substrate.Light source shoot laser.Optical system has laser focusing in the object lens of semiconductor substrate.Optical modulator can be modulated the energy density distribution of laser.Control unit controls optical modulator, so that relative movement direction of the peak position of the energy density distribution of laser from the optical axis of object lens towards optical system relative to semiconductor substrate deviates.
Description
[association request]
The application is enjoyed to be applied based on Japanese patent application 2017-176070 (applying date: on September 13rd, 2017)
Priority.The application applies by referring to the basis and the full content comprising basic application.
Technical field
Embodiments of the present invention are related to a kind of semiconductor manufacturing apparatus.
Background technique
When semiconductor substrate monolithic is turned to chip, one of the methods is generate laser focusing in semiconductor substrate
Layer is modified, semiconductor substrate is rived along this modification layer.Modification layer in semiconductor substrate can be because of internal stress to a certain degree
It rives, so sometimes laser can be reflected or be reflected by its cleavage surface.The scattering light that laser reflection or refraction generate can reach half
Semiconductor integrated circuit is damaged in the semiconductor integrated circuit region of conductor substrate.
In order to inhibit such scattering light, considering to reduce laser power (method 1) or extend the laser generation period to increase
Spacing (method 2) between adjacent modified region.In method 1, since the energy of scattering light itself is small, so semiconductor collection can be inhibited
At the damage of circuit.But, if laser power is low, modified region becomes smaller, it is therefore necessary to increase laser irradiation number (by secondary
Number).Therefore time-consuming for processing, and productivity reduces.
On the other hand, the irradiation spacing in method 2 due to laser is big, has been formed so laser can be less incident to
Cleavage surface, to inhibit to scatter light.But, if irradiation spacing is big, the cleavage surface of semiconductor substrate is unstable, it is difficult to will partly lead
Body substrate high-quality monolithic turn to chip.
Summary of the invention
Embodiments of the present invention provide a kind of scattering for being able to suppress laser beam, and the high-quality in relative short time
The semiconductor manufacturing apparatus of ground processing semiconductor substrate.
The semiconductor manufacturing apparatus of embodiment along cutting preset lines by partly leading to semiconductor substrate illumination laser
Modified region is formed in body substrate.Light source shoot laser.Optical system has object lens, and the object lens are by laser focusing in semiconductor
Substrate.Optical modulator can be modulated the energy density distribution of laser.Control unit controls optical modulator, so that the energy of laser
The peak position of metric density distribution, it is inclined relative to the relative movement direction of semiconductor substrate from the optical axis of object lens towards optical system
It moves.
Detailed description of the invention
Fig. 1 is the skeleton diagram for indicating the configuration example of laser processing device of the 1st embodiment.
Fig. 2 is the skeleton diagram for indicating an example of Inner Constitution of laser aid.
Fig. 3 is the block diagram for indicating an example of Inner Constitution of optical modulator controller.
Fig. 4 is the curve graph for indicating the energy density distribution of laser beam of the 1st embodiment.
Fig. 5 is the cross-sectional view for indicating to process the situation of semiconductor substrate using laser beam.
Fig. 6 is the curve graph for indicating the energy density distribution of laser beam.
Fig. 7 is the cross-sectional view for indicating to process the situation of semiconductor substrate using laser beam.
Fig. 8 is the curve graph of the relationship of the irradiation spacing for indicating laser beam and the offset of peak position.
Fig. 9 is the curve graph for indicating the energy density distribution of laser beam of the 2nd embodiment.
Figure 10 is the cross-sectional view for indicating the situation of the laser processing device processing semiconductor substrate using the 2nd embodiment.
Figure 11 is the cross-sectional view for indicating the situation of the laser processing device processing semiconductor substrate using the 2nd embodiment.
Figure 12 is the skeleton diagram for indicating an example of the Inner Constitution of laser aid of the 3rd embodiment.
Figure 13 is the cross-sectional view for indicating the configuration example of laser processing device of the 3rd embodiment.
Figure 14 is the skeleton diagram for indicating the configuration example of laser processing device of the 4th embodiment.
Figure 15 is the cross-sectional view for indicating the configuration example of laser processing device of the 4th embodiment.
Specific embodiment
In the following, being explained with reference to embodiments of the present invention.Present embodiment does not limit the invention.It is attached
Figure is schematic diagram or concept map, and ratio of each section etc. is not necessarily identical with material object.In the description and the appended drawings, to preceding figure
The identical element of the element of narration adds the same symbol, and suitably detailed description will be omitted.
(the 1st embodiment)
Fig. 1 is the skeleton diagram for indicating the configuration example of laser processing device 1 of the 1st embodiment.Laser processing device 1 be with
Lower device: laser beam is irradiated along the cutting preset lines (cutting line) of semiconductor substrate W, semiconducting crystal is made to modify and be formed
Modify layer.Semiconductor substrate W is rived along the modification layer, thus semiconductor substrate W is cut off along cutting line, and monolithic turns to
Semiconductor chip.Laser processing device 1 is used for the laser cutting of semiconductor substrate W in such a way.
This laser processing device 1 has objective table 10, movable shaft 20~23, movable axis controller 30, laser aid 40
And master controller 50.
Objective table 10 can carry the semiconductor substrate W of processing, adsorb and fix semiconductor substrate W.Movable shaft 20~22
The lower part of objective table 10 is set, moves in parallel objective table 10 in general horizontal face or moving in rotation.Movable shaft 20,
21 move in parallel objective table 10 in general horizontal face towards X-direction and Y direction.Movable shaft 22 makes objective table 10
The moving in rotation in generally horizontal plane.The setting of movable shaft 23 moves laser aid 40 itself in laser aid 40.
Movable axis controller 30 controls movable shaft 20~23.Movable axis controller 30 can make objective table as a result,
10 and semiconductor substrate W is relatively moved relative to laser aid 40.In addition, movable axis controller 30 can make 40 phase of laser aid
It is mobile for objective table 10.
Laser aid 40 makes 2 impulse hunting of laser beam, and carries out shaping and modulation to laser beam 2, (poly- using object lens
Optical lens) it is concentrated on laser beam 2 in semiconductor substrate W.The pulse frequency of laser beam 2 is, for example, about 90kHz.In order to control
The focal position of laser beam 2 in semiconductor substrate W processed, laser aid 40 can be moved in z-direction using movable shaft 23.
About the Inner Constitution of laser aid 40, will illustrate later referring to Fig. 2.
Master controller 50 controls the entirety of the laser processing devices 1 such as laser aid 40 or movable axis controller.
Fig. 2 is the skeleton diagram for indicating an example of Inner Constitution of laser aid 40.Laser aid 40 has laser oscillator
41, beam shaping 42, optical modulator 43, beam shaping 44, object lens (collector lens) 45 and optical modulator controller 46.
Laser oscillator 41 as light source carries out impulse hunting to laser beam and is emitted.Beam shaping 42 is to coming from
The energy density distribution (i.e. energy intensity distribution) of the laser beam of laser oscillator 41 is adjusted.
Optical modulator 43 has clathrate or rectangular two-dimensional arrangements pixel electrodes (not shown), using being applied to picture
The voltage of plain electrode controls the wavelength of laser beam, phase, energy density distribution (i.e. energy intensity distribution) etc..
Optical modulator controller 46 for wavelength, phase, energy density (i.e. energy intensity) for changing laser beam etc. and
Control optical modulator 43.The Inner Constitution of optical modulator controller 46 is described below referring to Fig. 3.
The modulated laser beam of optically modulated device 43 is carried out final adjustment by beam shaping 44, then by object lens 45
Optically focused.Object lens 45 irradiate laser beam towards semiconductor substrate W, allow laser beam to be concentrated on specific in semiconductor substrate W
Depth location.
Beam shaping 42,44 and object lens 45 make the laser beam be concentrated on half as being modulated to laser beam
The optical system of conductor substrate W functions.
Fig. 3 is the block diagram for indicating an example of Inner Constitution of optical modulator controller 46.Optical modulator controller 46 has
Interface portion 141,144, modulation pattern storage unit 142 and modulation pattern controller 143.
Modulation pattern storage unit 142 stores the modulation pattern of wavelength, phase, energy density of laser beam etc..Modulation figure
Case is the pattern of the electric signal exported with specific time sequence to optical modulator 43, so that the wavelength of laser beam, phase, energy density
Etc. being in particular value or particular range.User pre-enters or selects modulation pattern by master controller 50, via interface portion 141
Log on to modulation pattern storage unit 142.Modulation pattern storage unit 142 is controlled in the processing of semiconductor substrate W to modulation pattern
Device 143 exports modulation pattern.
Modulation pattern controller 143 controls modulation pattern storage unit 142, interface portion 141,144.Modulation pattern control
Device 143 processed controls optical modulator 43 according to the modulation pattern stored in modulation pattern storage unit 142 via interface portion 144
System.Optical modulator controller 46 can be compareed and be set to semiconductor substrate according to the movement of objective table 10 or laser aid 40 as a result,
The laser beam of W is modulated.
In the present embodiment, energy density distribution (energy intensity distribution) of the optical modulator controller 46 to laser beam
It is modulated.Therefore, modulation pattern herein is carried out for the energy density distribution (energy intensity distribution) to laser beam
The electric signal pattern of modulation.Modulation pattern about present embodiment will be described hereinafter.Though the wavelength of laser beam, phase etc.
It is not specifically mentioned, it can fix, can also be modulated in the processing of semiconductor substrate W.
Fig. 4 is the curve graph for indicating the energy density distribution of laser beam of the 1st embodiment.Horizontal axis indicates shown in Fig. 5
Relative movement direction (+X direction) of the object lens 45 (optical system) relative to semiconductor substrate W.The longitudinal axis indicates laser beam
Energy density distribution (energy intensity distribution).Origin 0 is between the 1st end Xe1 of energy density distribution and the 2nd end Xe2
Center, and be the optical axis (pupil centre) of object lens 45.That is, laser beam with the center of energy density distribution (Xe1 and
Center between Xe2) and the optical axis mode unanimous on the whole of object lens 45 be incident to object lens 45.
In general, the energy density of laser beam has relative to the symmetrical Gaussian Profile of the longitudinal axis (ginseng for passing through origin 0
According to Fig. 9).In this case, at the peak position P of the energy density of laser beam on longitudinal axis.But, in present embodiment,
Make the peak position P of the energy density of laser beam from vertical axis processing direction of travel offset.
In this, as shown in figure 4, the center (centre bit between Xe1 and Xe2 of the energy density distribution of laser beam
Set) and origin 0 it is unanimous on the whole, the peak position P of the energy density distribution of laser beam is towards +X direction (the mobile side of object lens 45
To) offset, it is in the position of+X1.That is, the peak position P of the energy density distribution of laser beam is from energy density distribution
Heart point 0 is towards +X direction offset+X1.Optical modulator controller 46 as control unit controls optical modulator 43, so that laser beam
Energy density distribution phase of the peak position P from the center of energy density distribution 0 towards object lens 45 relative to semiconductor substrate W
To moving direction (+X direction).Peak position P indicates the position of the maximum value of the energy density (intensity) of laser beam 2.
Fig. 5 is the cross-sectional view for indicating to process the situation of semiconductor substrate W using laser beam.Laser beam 2 is incident to object
It is incident from the back side F2 of semiconductor substrate W after mirror 45, the position Lf being concentrated in semiconductor substrate W.Utilize laser beam 2
Energy destroys the crystallization (such as silicon crystallization) of the semiconductor substrate W at the Lf of position, forms modified region 100.In modified region
Around 100, region 110 of riving is formed because of stress.Modified region 100 extends to the top of the spot position of laser beam 2
(back side side F2), (the surface side F1) extends less downward.In addition, modified region 100 is for example formed in away from semiconductor substrate W
About 40 μm of surface F1 of position.
In fact, keeping semiconductor substrate W mobile towards -X direction with objective table 10 on one side, on one side with laser aid 40 to laser
Light beam 2 carries out recurrent pulses oscillation.Therefore, as shown in figure 5, modified region 100 in object lens 45 relative to semiconductor substrate W's
Formed to relative movement direction (+X direction) interruption (discrete).In addition, the irradiation spacing relative narrower of laser, modified region 100
It is in stratiform or band-like formation along cutting line.Therefore, multiple modified regions 100 are also referred to as modified into layer below.In addition, this explanation
It is recorded in book, in the processing of semiconductor substrate W, object lens 45 are relatively moved relative to semiconductor substrate W and objective table 10.
But, objective table 10 and semiconductor substrate W can also be mobile relative to object lens 45 (optical system).
In this, line Lp indicates the line of the peak position P of the energy density distribution of laser beam 2.Laser beam 2 is with object lens
Incident centered on 45 optical axis 0, Lp is deviated relative to the optical axis 0 of object lens 45 towards the relative movement direction (+X direction) of object lens 45
+X1.In other words, optical modulator controller 46 makes peak position P from the center of energy density distribution 0 towards modified region 100
Formation direction (+X direction) offset+X1 relative to semiconductor substrate W.That is, peak position P is deviated towards processing direction of travel.
The laser beam 2 at the high peak position P of energy density substantially not by modified region 100 and is rived as a result,
110 ground of region reaches spot position Lf.Since the laser beam 2 of peak position P substantially not by modified region 100 and is rived
Region 110, the high laser beam 2 of intensity will not substantially be scattered to modified region 100 and region 110 of riving.That is, laser beam
Scattering light caused by 2 reflection, refraction is inhibited, and is able to suppress the semiconductor integrated circuit of the surface setting of semiconductor substrate
Damage.
Fig. 6 and Fig. 7 indicate the case where object lens 45 relative to the direction of travel of semiconductor substrate W are anti-(-X direction).
Fig. 6 is the curve graph for indicating the energy density distribution of laser beam.The center of the energy density distribution of laser beam
Position (center between Xe1 and Xe2) and origin 0 are unanimous on the whole, the peak position P of the energy density distribution of laser beam
It is deviated to -X direction (moving directions of object lens 45), is in the position of-X1.That is, the peak value of the energy density distribution of laser beam
Position P is from the central point 0 of energy density distribution towards -X direction offset-X1.
Like this, in present embodiment, the optical modulator controller 46 as control unit controls optical modulator 43, so that swashing
The peak position P of the energy density distribution of light light beam is served as a contrast from the center of energy density distribution 0 towards object lens 45 relative to semiconductor
The relative movement direction (-X direction) of bottom W deviates.
Fig. 7 is the cross-sectional view for indicating to process the situation of semiconductor substrate W using laser beam.Laser beam 2 is incident to object
It is incident from the back side F2 of semiconductor substrate W after mirror 45, and the position Lf being concentrated in semiconductor substrate W.Utilize laser beam
2 energy destroys the crystallization (such as silicon crystallization) of the semiconductor substrate W at the Lf of position, forms modified region 100.In modification area
100 surrounding stress of domain and form region 110 of riving.
In fact, keeping semiconductor substrate W mobile towards +X direction with objective table 10 on one side, on one side with laser aid 40 to laser
Light beam 2 carries out recurrent pulses oscillation.Therefore, as shown in fig. 7, modified region 100 in object lens 45 relative to semiconductor substrate W's
Formed to relative movement direction (-X direction) interruption (discrete).
In this, laser beam 2 is incident centered on the optical axis 0 of object lens 45, Lp relative to object lens 45 optical axis 0 towards object lens
45 relative movement direction (-X direction) offset-X1.In other words, optical modulator controller 46 keeps peak position P close from energy
Spend formation direction (-X direction) offset-X1 of the center 0 of distribution towards modified region 100 relative to semiconductor substrate W.That is, peak
It is worth position P towards processing direction of travel offset.
The laser beam 2 of the high peak position P of energy density does not pass through modified region 100 and area of riving substantially as a result,
110 ground of domain reaches spot position Lf.Since the laser beam 2 of the high peak position P of intensity will not substantially pass through modified region
100 and region 110 of riving, laser beam 2 will not substantially be scattered to modified region 100 and region 110 of riving.That is, because of laser
Scattering light caused by the reflection of light beam 2, refraction is inhibited, so as to the semiconductor for inhibiting the surface of semiconductor substrate to be arranged
The damage of integrated circuit.
Like this, according to the present embodiment, optical modulator controller 46 controls optical modulator 43, so that energy density distribution
Peak position P towards object lens 45 relative movement direction deviate.Thereby, it is possible to inhibit the scattering light of laser beam 2, and it is high
Semiconductor substrate W monolithic is turned into quality semiconductor chip.
As shown in figure 5 and figure 7, when object lens 45 switch relative to the moving direction of semiconductor substrate W, optical modulator control
Device 46 compares the moving direction of object lens 45, carrys out offset of the switch peak value position P relative to the center of energy density distribution.That is, light
Modulator control 46 compares offset of the object lens 45 relative to the moving direction automatically switch peak value position P of semiconductor substrate W
Direction.For example, when moving back and forth objective table 10 while making 2 impulse hunting of laser beam, optical modulator controller 46
In outlet (such as +X direction) and returning road (-X direction) cuts the offset direction of peak position P automatically from +X direction to -X direction
It changes.Even if object lens 45 change relative to the moving direction of semiconductor substrate W as a result, it also can unceasingly inhibit dissipating for laser beam 2
Penetrate light.As a result, it is possible to inhibit to scatter light, and efficiency processes semiconductor substrate W well, relatively shortens its process time.
(investigation about offset)
Fig. 8 is the curve graph of the relationship of the irradiation spacing for indicating laser beam 2 and the offset of peak position.Horizontal axis indicates
Offset of the peak position P relative to the center 0 of the energy density distribution of laser beam 2.The unit of offset is light tune
The pixel number of device 43 processed.In addition, the opposite direction of travel of object lens 45 is set as -X direction.That is,-the X1 of offset-lists diagram 7.Longitudinal axis table
Show the spacing (P100 of Fig. 7) between adjacent multiple modified regions 100.
Offset has previously been stored in the modulation pattern storage unit 142 of Fig. 4 as the partial information of modulation pattern.Modulation
The offset that pattern controller 143 is stored according to modulation pattern storage unit 142, makes peak position P relative to the energy of laser beam 2
The center 0 of metric density distribution deviates.In addition, offset can not also be stored in modulation pattern storage unit 142, but from master control
Device 50 processed is directly inputted to modulation pattern controller 143.
L1~L5 indicates that the scattering light of laser beam 2 can be maintained the lower limit spacing for not reaching threshold value.In general, spacing
For the more big then laser beam 2 of P100 further away from adjacent modified region 100, therefore, it is difficult to pass through this modified region 100 and area of riving
Domain 110.Spacing P100 is bigger as a result, and scattering light is more reduced.On the other hand, spacing P100 is narrower, and laser beam 2 is closer to phase
Adjacent modified region 100 and region 110 of riving is easy to pass through this modified region 100 and region 110 of riving.Spacing P100 as a result,
Narrower, scattering light more increases.
Therefore, the lower limit spacing that L1~L5 is indicated is lower, it is meant that more can obtain low by scattering Xanthophyll cycle, and reduce spacing
P100.If spacing P100 is excessive, riving for semiconductor substrate W is unstable, it is difficult to by semiconductor substrate W high-quality singualtion
For chip.Therefore, if considering the quality and reliability of semiconductor chip, preferably spacing P100 is relatively narrow.If can will scatter as a result,
Xanthophyll cycle obtains low, and reduces spacing P100, can realize the inhibition of scattering light and the facilitation of singualtion simultaneously.
In addition, the energy of 1 pulse (1 irradiation (shot)) of laser beam 2 is different under L1~L5.What L1 was indicated swashs
The energy of light light beam 2 is such as 3.33 μ J/ irradiation.The energy for the laser beam 2 that L2 is indicated is such as 6.67 μ J/ irradiation.L3 table
The energy of the laser beam 2 shown is such as 10.00 μ J/ irradiation.The energy for the laser beam 2 that L4 is indicated is such as 13.33 μ J/ photograph
It penetrates.The energy for the laser beam 2 that L5 is indicated is such as 16.67 μ J/ irradiation.
Referring to L1~L5, if the energy of laser beam 2 rises, in order to inhibit to scatter light, it is necessary to increase lower limit spacing.Separately
On the one hand, the energy independent of laser beam 2, if offset is 2 pixels or more (below -2 pixels) in -X direction, lower limit
Spacing can become smaller.This means that: pass through the center 0 by peak position P relative to the energy density distribution of laser beam 2
Offset is set as 2 pixels or more, can suppress scattering light.Therefore, it can be said that it is preferred that by peak position P relative to laser beam 2
The offset of the center 0 of energy density distribution is set as 2 pixels or more.
(the 2nd embodiment)
Fig. 9 is the curve graph for indicating the energy density distribution of laser beam of the 2nd embodiment.In the 1st embodiment,
Be the energy density distribution for making laser beam peak position P from the central point 0 of energy density distribution deviate.In contrast, the 2nd
It in embodiment, deviates peak position P from the central point 0 of energy density distribution, but keeps laser beam whole from object lens
45 light shaft offset.Therefore, as shown in figure 9, in the 2nd embodiment, the energy density of laser beam has Gaussian Profile.This
In the case of kind, at the peak position P of the energy density of laser beam on longitudinal axis.On the other hand, as shown in Figure 10 and Figure 11, light
Modulator control 46 makes laser beam 2 is whole to deviate from the optical axis 0 of lens 45.
Figure 10 and Figure 11 is the situation for indicating to process semiconductor substrate W using the laser processing device 1 of the 2nd embodiment
Cross-sectional view.Figure 10 and Figure 11 in terms of the energy density distribution of laser beam 2 be different from Fig. 5 and Fig. 7, other constitute and Fig. 5 and
Fig. 7 is identical.
In this, as described above, laser beam 2 relative to object lens 45 optical axis 0 towards object lens 45 relative to semiconductor substrate W
Relative movement direction (+X direction) offset.In other words, optical modulator controller 46 by keep laser beam 2 whole relative to
Object lens 45 deviate, and make formation of the peak position P from the optical axis 0 of object lens 45 towards modified region 100 relative to semiconductor substrate W
Direction (+X direction) offset+X1.As a result, similarly with the peak position P of the 1st embodiment, peak position P is towards processing traveling side
To offset.
Figure 11 indicates the case where object lens 45 relative to the direction of travel of semiconductor substrate W are anti-(-X direction).In this, laser
Light beam 2 relative to object lens 45 optical axis 0 towards object lens 45 relative to semiconductor substrate W relative movement direction (-X direction) deviate.
In other words, optical modulator controller 46 is deviated by keeping laser beam 2 whole relative to object lens 45, and make peak position P from
Formation direction (-X direction) offset-X1 of the optical axis 0 of object lens 45 towards modified region 100 relative to semiconductor substrate W.As a result, and
Similarly, peak position P is deviated the peak position P of 1st embodiment towards processing direction of travel.
When object lens 45 switch relative to the moving direction of semiconductor substrate W, optical modulator controller 46 compares object lens 45
Relative to the moving direction of semiconductor substrate W, automatically switch offset direction of the laser beam 2 relative to object lens 45.
The 2nd embodiment can obtain effect identical with the 1st embodiment as a result,.
(the 3rd embodiment)
Figure 12 is the skeleton diagram for indicating an example of the Inner Constitution of laser aid 40 of the 3rd embodiment.In the 3rd embodiment party
In formula, optical modulator controller 46 makes laser beam 2 relative to the incidence angle of object lens 45 from the inclined light shafts of object lens 45.
In order to realize this form, the laser aid 40 of the 3rd embodiment is also equipped with reflecting mirror MRR1, MRR2 and actuating
Device ACT1, ACT2.In the optical path of laser beam of the reflecting mirror MRR1 configuration between optical modulator 43 and beam shaping 44.Instead
It penetrates in the optical path of laser beam of the mirror MRR2 configuration between beam shaping 44 and object lens 45.Actuator ACT1 is arranged in light tune
On device 43 processed, the angle of optical modulator 43 can be changed.Actuator ACT2 is arranged on reflecting mirror MRR2, can change reflecting mirror
The angle of MRR2.Actuator ACT1, ACT2 are controlled by optical modulator controller 46.Optical modulator controller 46 is according to modulation pattern
To change the angle of optical modulator 43 and reflecting mirror MRR2.Thereby, it is possible to change the incidence angle of laser beam 2.3rd embodiment
Other constitute and the 1st embodiment it is corresponding constitute it is identical.
Figure 13 is the cross-sectional view for indicating the configuration example of laser processing device 1 of the 3rd embodiment.In the 3rd embodiment,
Optical modulator controller 46 makes laser beam 2 relative to the incidence angle of the optical axis of object lens 45, from the table perpendicular to semiconductor substrate W
Relative movement direction (- X side of the vertical direction (Y-direction) of face F1 or back side F2 towards object lens 45 relative to semiconductor substrate W
To) inclination.In addition, peak position P is not from the off-centring of the energy density distribution of laser beam 2.In addition, object lens 45 itself
It does not tilt, the optical axis and Y-direction of object lens 45 are unanimous on the whole.Other of 3rd embodiment constitute the correspondence structure with the 1st embodiment
At identical.
For example, the angle that laser beam 2 is incident to object lens 45 is set as φ, laser beam 2 is incident to spot position Lf
Angle be set as θ.In addition, incidence angle φ and θ is the incidence angle of the laser beam 2 at peak position P as shown in line Lp.
In this case, incidence angle φ and θ is from the optical axis (Y-direction) of object lens 45 towards the relative movement direction of object lens 45
(-X direction) inclined angle.Relative movement direction (- X of the laser beam 2 from the optical axises (Y-direction) of object lens 45 towards object lens 45
Direction) to be incident to object lens 45 after incidence angle φ inclination.In addition, laser beam 2 is from Y-direction towards the relative movement side of object lens 45
Spot position Lf is incident to after tilting to (-X direction) with incidence angle θ.
In other words, optical modulator controller 46 controls optical modulator 43, so that laser beam 2 is incident to entering for object lens 45
Formation direction of the firing angle from Y-direction towards modified region 100 is tilted with angle φ.Laser beam 2 is from Y-direction towards object as a result,
The relative movement direction (-X direction) of mirror 45 is incident to spot position Lf after tilting with incidence angle θ.That is, line Lp goes relative to processing
Into direction with angle Cl.
Like this, by making the incidence angle of laser beam 2 from Y-direction towards processing direction of travel inclination, energy can be made
Laser beam 2 at the high peak position P of density does not substantially reach optically focused by modified region 100 and 110 ground of region of riving
Position Lf.Therefore, the 3rd embodiment can obtain effect identical with the 1st embodiment.
When object lens 45 change relative to the moving direction of semiconductor substrate W, optical modulator controller 46 is so that incidence angle
φ and θ changes optical modulator 43 towards the inclined mode of moving direction.That is, optical modulator controller 46 is to compare the movements of object lens 45
The mode in direction automatically switches incidence angle φ and θ.Even if object lens 45 change relative to the moving direction of semiconductor substrate W as a result,
Also it can continue to inhibit the scattering light of laser beam 2.As a result, it is possible to relatively shorten the process time of semiconductor substrate W.
(the 4th embodiment)
Figure 14 is the skeleton diagram for indicating the configuration example of laser processing device 1 of the 4th embodiment.In the 3rd embodiment,
Not the optical axis of tilt the objective lens 45 but make the incidence angle of laser beam 2 from the inclined light shaft of object lens 45.In contrast, the 4th implements
It is to tilt the optical axis of object lens 45 and the incidence angle of laser beam 2 together in mode.In addition, in this case, laser beam 2
Incidence angle can not also be relative to the inclined light shaft of object lens 45.
In order to realize this form, the laser processing device 1 of the 4th embodiment is also equipped with sloping shaft 24,25.Sloping shaft 24
The lower section of objective table 10 is set, is configured to tilt objective table 10 and semiconductor substrate W together.Sloping shaft 25 is arranged in laser
Device 40 is configured to tilt laser aid 40 and object lens 45 together.Sloping shaft 24,25 is controlled by movable axis controller 30.It can
Moving axis controller 30 is according to the angle of modulation pattern change semiconductor substrate W or the angle of object lens 45.Thereby, it is possible to make object lens 45
Optical axis and the incidence angle of laser beam 2 tilt together, change the incidence angle of laser beam 2.Other compositions of 4th embodiment
It is identical with the corresponding composition of the 1st embodiment.
Figure 15 is the cross-sectional view for indicating the configuration example of laser processing device 1 of the 4th embodiment.In the 4th embodiment,
Make the optical axis of object lens 45 and the incidence angle of laser beam 2, from the Vertical Square of surface F1 or back side F2 perpendicular to semiconductor substrate W
Relative movement direction (+X direction) to (Y-direction) towards object lens 45 relative to semiconductor substrate W tilts.In addition, in Figure 15, by object
The moving direction of mirror 45 is set as +X direction.
For example, the incidence angle of laser beam 2 and the optical axis of object lens 45 are tilted with angle φ from Y-direction.At this moment, by laser light
The angle that beam 2 is incident to spot position Lf is set as θ.The inclined direction of the optical axis of the incidence angle and object lens 45 of laser beam 2 is from Y
Direction is towards the relative movement direction (+X direction) of object lens 45.That is, incidence angle φ and θ are the relative movements from Y-direction towards object lens 45
Direction (+X direction) inclined angle.
Relative movement direction (+X direction) of the laser beam 2 from Y-direction towards object lens 45 is incident after being tilted with incidence angle φ
To object lens 45.Relative movement direction (+X direction) of the laser beam 2 from Y-direction towards object lens 45 enters after being tilted with incidence angle θ as a result,
It is incident upon spot position Lf.
In other words, movable axis controller 30 controls sloping shaft 25, so that the incidence of the optical axis of object lens 45 and laser beam 2
Formation direction of the angle from Y-direction towards modified region 100 is tilted with angle φ.By controlling sloping shaft with movable axis controller 30
25, object lens 45 and laser aid 40 can be made to tilt relative to objective table 10.Laser beam 2 is from Y-direction towards object lens 45 as a result,
Relative movement direction (+X direction) is incident to spot position Lf after tilting with incidence angle θ.That is, line Lp is relative to processing direction of travel
With angle Cl.
When object lens 45 change relative to the moving direction of semiconductor substrate W, movable axis controller 30 is so that incidence angle φ
And θ changes the inclined direction of optical modulator 43 and object lens 45 towards the inclined mode of moving direction.That is, movable axis controller 30 is with right
Automatically switch incidence angle φ and θ according to the mode of the moving direction of object lens 45.In addition, the switching at the inclination angle of the optical axis of object lens 45, is
By controlling sloping shaft 24 with movable axis controller 30, change objective table 10 comes relative to the inclination of object lens 45 or laser aid 40
It changes.
Even if object lens 45 change relative to the moving direction of semiconductor substrate W as a result, can also continue to inhibit laser beam 2
Scattering light.The 4th embodiment can obtain effect identical with the 3rd embodiment as a result,.
Although several embodiments of the invention are illustrated, these embodiments are proposed as example,
It is not intended to limit the range of invention.These embodiments can be implemented in various other forms, and not depart from inventive concept
In range, it is able to carry out various omissions, displacement, change.These embodiments or its variation are contained in the scope and summary of invention,
It is again included in invention and its equivalency range of claim record.
[explanation of symbol]
1 laser processing device
10 objective tables
20~23 movable shafts
30 movable axis controllers
40 laser aids
50 master controllers
41 laser oscillators
42 beam shapings
43 optical modulators
44 beam shapings
45 object lens
46 optical modulator controllers
141,144 interface portion
142 modulation pattern storage units
143 modulation pattern controllers
Claims (11)
1. a kind of semiconductor manufacturing apparatus, it is characterised in that: by existing along cutting preset lines to semiconductor substrate illumination laser
Modified region is formed in the semiconductor substrate, and is had:
Light source is emitted the laser；
Optical system has the laser focusing in the object lens of the semiconductor substrate；
Optical modulator can be modulated the energy density distribution of the laser；And
Control unit controls the optical modulator, so that the peak position of the energy density distribution of the laser is from described
Relative movement direction of the optical axis of object lens towards the optical system relative to the semiconductor substrate deviates.
2. semiconductor manufacturing apparatus according to claim 1, it is characterised in that: the control unit to the optical modulator into
Row control, so that the peak position is from the optical axises of the object lens towards the modified region relative to the semiconductor substrate
Form direction offset.
3. semiconductor manufacturing apparatus according to claim 1 or 2, it is characterised in that: when the moving direction changes, institute
It states control unit and changes the optical modulator, so that the peak position of the optical axis relative to the object lens is towards the movement side
To offset.
4. semiconductor manufacturing apparatus according to claim 1 or 2, it is characterised in that: the control unit is to the light modulation
Device is controlled, so that the peak position of the energy density distribution of the laser, from the center of the energy density distribution towards institute
State moving direction offset.
5. semiconductor manufacturing apparatus according to claim 1 or 2, it is characterised in that: the control unit is to the light modulation
Device is controlled, so that the optical axis of the center of the energy density distribution of the laser from the object lens is inclined towards the moving direction
It moves.
6. semiconductor manufacturing apparatus according to claim 1, it is characterised in that: the peak position is relative to the object lens
Optical axis offset be the optical modulator 2 pixels more than.
7. a kind of semiconductor manufacturing apparatus, it is characterised in that: by existing along cutting preset lines to semiconductor substrate illumination laser
Modified region is formed in the semiconductor substrate, and is had:
Light source is emitted the laser；
Optical system, by the laser focusing in the semiconductor substrate；
Optical modulator can be modulated the laser；And
Control unit controls the optical system or the optical modulator, so that the laser is relative to the semiconductor
The incidence angle of substrate, from the direction vertical with the surface of the semiconductor substrate, towards the optical system relative to described half
The relative movement direction of conductor substrate tilts.
8. semiconductor manufacturing apparatus according to claim 7, it is characterised in that: the control unit to the optical system or
The optical modulator is controlled so that the incidence angle from it is described vertical towards the modified region relative to described half
The formation direction of conductor substrate tilts.
9. semiconductor manufacturing apparatus according to claim 7 or 8, it is characterised in that: when the moving direction changes, institute
It states control unit and changes the optical system or the optical modulator, so that the incidence angle is tilted towards the moving direction.
10. semiconductor manufacturing apparatus according to claim 7 or 8, it is characterised in that: the optical system has object lens,
The object lens by the laser focusing in the semiconductor substrate,
The control unit controls the optical system or the optical modulator, so that the laser is relative to the object lens
Incidence angle from described inclined vertically.
11. semiconductor manufacturing apparatus according to claim 7 or 8, it is characterised in that: the optical system has object lens,
The object lens by the laser focusing in the semiconductor substrate,
The control unit controls the optical system or the optical modulator, so that the optical axis of the object lens hangs down from described
Histogram is to inclination.
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| JP2017176070A JP2019051529A (en) | 2017-09-13 | 2017-09-13 | Semiconductor manufacturing device |
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| CN115210973B (en) * | 2020-03-10 | 2023-08-01 | 三菱电机株式会社 | Wavelength conversion laser device and wavelength conversion laser processing machine |
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| TW201916213A (en) | 2019-04-16 |
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