CN109492489A - Electronic equipment - Google Patents
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- Publication number
- CN109492489A CN109492489A CN201710819506.9A CN201710819506A CN109492489A CN 109492489 A CN109492489 A CN 109492489A CN 201710819506 A CN201710819506 A CN 201710819506A CN 109492489 A CN109492489 A CN 109492489A
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- China
- Prior art keywords
- display screen
- ultrasonic sensor
- electronic equipment
- layer
- film transistor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
The present invention relates to a kind of electronic equipment, including display screen；Ultrasonic sensor is equipped in the display screen, and each structure of the display location above the ultrasonic sensor being capable of conduct ultrasound；The top surface of the ultrasonic sensor is towards display screen surface for displaying images, and the ultrasonic sensor can emit ultrasonic wave and receive the ultrasonic wave of reflection, and the ultrasonic wave of reflection is converted to electric signal.After user's finger touches on a display screen, contact object generation reflection is reached after passing through display screen by the ultrasonic wave of ultrasonic sensor transmitting, ultrasonic sensor can carry out fingerprint recognition after receiving the ultrasonic wave of reflection, so as to which fingerprint identification technology to be applied in the electronic equipment of full frameization.
Description
Technical field
The present invention relates to electronic technology fields, more particularly to a kind of electronic equipment.
Background technique
Electronic equipment is typically stored with a large amount of personal informations, therefore the safety of electronic equipment is particularly important.Based on above-mentioned
Situation, fingerprint identification technology come into being.Fingerprint identification technology is realized by fingerprint sensor, a people with him
Fingerprint be mapped, be compared by comparing his fingerprint and the fingerprint that pre-saves, so that it may verify his true body
Part.
However, the full frameization demand of electronic equipment is also higher and higher, therefore it is full frame to be applied to fingerprint identification technology
The electronic equipment of change is a problem to be solved.
Summary of the invention
Based on this, it is necessary to aiming at the problem that how to make fingerprint identification technology be applied to the electronic equipment of full frameization, provide
A kind of electronic equipment.
A kind of electronic equipment, including display screen；Be equipped with ultrasonic sensor in the display screen, and the display location in
Each structure above the ultrasonic sensor being capable of conduct ultrasound；The top surface of the ultrasonic sensor is shown towards described
Display screen surface for displaying images, and the ultrasonic sensor can emit ultrasonic wave and receive the ultrasonic wave of reflection, and
The ultrasonic wave of reflection is converted into electric signal.After user's finger touches on a display screen, by the super of ultrasonic sensor transmitting
Sound wave, which passes through, to be reached contact object after display screen and generates reflection, and ultrasonic sensor can carry out after receiving the ultrasonic wave of reflection
Fingerprint recognition, so as to which fingerprint identification technology to be applied in the electronic equipment of full frameization.
The display screen includes glass substrate and positioned at the of the top surface of the glass substrate in one of the embodiments,
One thin film transistor array layer.
In one of the embodiments, the ultrasonic sensor include the second thin film transistor array layer, electrode layer and
Piezoelectric layer；Second thin film transistor array layer is set to the bottom surface of the glass substrate；The electrode layer and piezoelectric layer are set to
The lower section of second thin film transistor array layer.Since first film transistor array layer and the second thin film transistor (TFT) array are total
With a glass substrate, electronic equipment can be reduced in the size of vertical direction, meet lightening demand.
The electrode layer is located at second thin film transistor array layer and the piezoelectric layer in one of the embodiments,
Between, it can be influenced to avoid piezoelectric layer by high temperature, to improve the reliability of ultrasonic sensor
The display screen further includes protection structure in one of the embodiments,；The protection structure is set to the ultrasound
The bottom of wave sensor, and for carrying out EMI protection to the ultrasonic sensor.Structure is protected by setting, it can be to avoid
Outer signals influence ultrasonic sensor.
The display screen is active matrix OLED display screen, and the sun of the display screen in one of the embodiments,
Pole layer is covered on the first film transistor array layer.
The protection structure is conducting foam in one of the embodiments,.
The display screen is active matrix type liquid crystal display screen, and the supersonic sensing in one of the embodiments,
Device is located at the top of the down polaroid in the display screen.
The protection structure is transparency protected ink in one of the embodiments, it is ensured that the light of backlight transmitting
Line can penetrate ultrasonic sensor.
The material of the electrode layer is ITO in one of the embodiments, it is ensured that the light of backlight transmitting can be with
Through ultrasonic sensor.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The attached drawing of other embodiments is obtained according to these attached drawings.
Structural schematic diagram relevant to ultrasonic sensor in the electronic equipment that Fig. 1 provides for an embodiment；
Fig. 2 is the structural decomposition diagram of one embodiment of the electronic equipment of Fig. 1 illustrated embodiment；
Fig. 3 is the structural decomposition diagram of another embodiment of the electronic equipment of Fig. 1 illustrated embodiment.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough
Comprehensively.
Unless otherwise defined, the skill of all technical and scientific terms used herein and the technical field for belonging to invention
The normally understood meaning of art personnel is identical.It is specific that description is intended merely in the term used in the description of invention herein
The purpose of embodiment, it is not intended that the limitation present invention.Term as used herein "and/or" includes one or more relevant institutes
Any and all combinations of list of items.
One embodiment provides a kind of electronic equipment, which is, for example, tablet computer, personal digital assistant, hand
Machine etc..The electronic equipment includes display screen.Specifically, display screen is, for example, active matrix OLED (Organic Light-
Emitting Diode, Organic Light Emitting Diode) display screen or active matrix liquid crystal display.
Referring to FIG. 1, being equipped with ultrasonic sensor 110 in display screen, and display location is above ultrasonic sensor 110
Each structure being capable of conduct ultrasound.The top surface of ultrasonic sensor 110 towards display screen surface for displaying images, and
Ultrasonic sensor 110 can emit ultrasonic wave and receive the ultrasonic wave of reflection, and the ultrasonic wave of reflection is converted to electric signal.
Wherein, each structure of the display location above ultrasonic sensor 110, refer between ultrasonic sensor 110 with
Each layer structure between display screen surface for displaying images, in other words, these structures are located at ultrasonic wave from supersonic sensing
In the conduction to the path between contact object of device 110.Specifically, each structure of the display location above ultrasonic sensor 110
Acoustic impedance be respectively less than given threshold (such as acoustic impedance and the acoustic impedance of glass close), thereby may be ensured that conduct ultrasound.
Further, since ultrasonic sensor 110 is located in display screen, therefore user is ok after any position of display screen touches
Carry out fingerprint recognition.
After user touches the surface of display screen, the ultrasonic wave that ultrasonic sensor 110 emits then passes through in display screen
Corresponding structure conduction and then generates the ultrasonic wave of reflection, the ultrasonic wave direction ultrasonic sensor 110 of reflection to the finger of user
Passback, final ultrasonic sensor 110 receive the ultrasonic wave of reflection, and are converted to electric signal.
Further, above-mentioned display screen further includes the circuit board (not shown) being electrically connected with ultrasonic sensor 110.
Circuit board is placed in ultrasonic wave and conducts to except the surface paths traversed for displaying images of display screen, i.e., ultrasonic wave exists
Without going past circuit board during being conducted to contact object, so as to avoid circuit board from causing shadow to the conduction of ultrasonic wave
It rings.
In addition, circuit board is equipped with driving chip, driving chip is, for example, ASIC (Application Specific
Integrated Circuit) chip.Driving chip to ultrasonic sensor 110 provide control signal (such as to ultrasonic wave pass
Sensor 110 sends high frequency electrical signal) so that ultrasonic sensor 110 emits ultrasonic wave.Also, driving chip also receives super
The electric signal that the ultrasonic wave of reflection is converted to by sonic sensor 110, to be identified to fingerprint.
It is understood that the set-up mode about driving chip is not limited to above situation, such as driving chip can also be with
It is directly installed in ultrasonic sensor 110.
In conclusion in above-mentioned electronic equipment, by the ultrasonic wave that ultrasonic sensor 110 emits pass through after display screen to
Reflection is generated up to contact object, ultrasonic sensor 110, which receives, can carry out fingerprint recognition after the ultrasonic wave of reflection, and by
It is set in display screen in ultrasonic sensor 110, therefore user can be carried out after any position of display screen touches
Fingerprint recognition, so as to which fingerprint identification technology to be applied in the electronic equipment of full frameization.
In one of the embodiments, with continued reference to FIG. 1, above-mentioned display screen include glass substrate 122 and be located at glass
The first film transistor array layer 121 of the top surface of substrate 122.Wherein, the top surface of glass substrate 122 is towards display screen for showing
The surface of diagram picture.First film transistor array layer 121 includes several thin film transistor (TFT)s arranged according to array manner, is used in combination
Image is shown in control display screen.Therefore, the driving method of display screen is active drive (or active matrix driving), the first film crystal
The realization principle of pipe array layer 121 can refer to traditional active matrix display screen.
Specifically, with continued reference to FIG. 1, ultrasonic sensor 110 includes the second thin film transistor array layer 111, electrode
Layer 112 and piezoelectric layer 113.Second thin film transistor array layer 111 is set to the bottom surface of glass substrate 122.Therefore, the first film is brilliant
Body pipe array layer 121 and the second thin film transistor array layer 111 two surfaces that be located at glass substrate 122 opposite.Due to
First film transistor array layer 121 and the second thin film transistor (TFT) array 111 share a glass substrate 122, reduce electronics
Equipment meets lightening demand in the size of vertical direction.Electrode layer 112 and piezoelectric layer 113 are set to the second thin film transistor (TFT)
The lower section of array layer 111.
Wherein, the second thin film transistor array layer 111 equally includes several thin film transistor (TFT)s arranged according to array manner,
Also, the electric signal that the second thin film transistor array layer 111 can be converted to piezoelectric layer 113 according to the ultrasonic wave of reflection into
The processing such as row amplification.Electrode layer 112 is constructed from a material that be electrically conducting, and conductive material is, for example, silver paste.Piezoelectric layer 113 is by piezoelectric material structure
At.Piezoelectric material is, for example, ferroelectricity high molecular polymer P (VDF-TrFE).In addition, the second thin film transistor array layer 111 and electricity
Pole layer 112 is electrically connected with above-mentioned driving chip.
The working principle of above-mentioned ultrasonic sensor 110 are as follows: driving chip applies corresponding high frequency telecommunications to electrode layer 112
Number.After electrode layer 112 has been applied high frequency electrical signal, high frequency electrical signal is conducted to piezoelectric layer 113, so that piezoelectric layer
113 transmitting ultrasonic waves.Ultrasonic wave upwardly propagates until reaching the surface for displaying images of display screen and touching user's
It is reflected after finger, piezoelectric layer 113 receives the ultrasonic wave of reflection and is converted to electric signal later, and the electric signal is thin through second again
Film transistor array layer 111 is sent in driving chip after corresponding processing (such as amplification) and is converted to image, to finger
Line is identified.
Specifically, with continued reference to FIG. 1, electrode layer 112 is located at the second thin film transistor array layer 111 and piezoelectric layer 113
Between.It, in the fabrication process, can be in the bottom surface of glass substrate 122 successively shape for electronic equipment in this present embodiment
Each layer structure for including at ultrasonic sensor 110.Since the solidification temperature of electrode layer 112 is usually higher, if such as conduction material
Material is silver paste, then the solidification temperature of electrode layer 112 is 80 DEG C, and the unbearable higher temperature of piezoelectric layer 113, therefore, this reality
It applies since electrode layer 112 is between the second thin film transistor array layer 111 and piezoelectric layer 113 in example, therefore can be first in glass
The bottom surface of substrate 122 forms electrode layer 112, forms piezoelectricity after the completion of the solidification of electrode layer 112, then in the bottom surface of electrode layer 122
Layer 113, so as to avoid piezoelectric layer 113 by the influence of high temperature, to improve the reliability of ultrasonic sensor 110.
In one of the embodiments, with continued reference to FIG. 1, above-mentioned display screen further includes protection structure 130.It needs to illustrate
, the protection structure 130 provided in the embodiment can combine with the electronic equipment that the various embodiments described above provide.Protection knot
Structure 130 is set to the bottom of ultrasonic sensor 110, and for carrying out EMI (Electromagnetic to ultrasonic sensor 110
Interference, electromagnetic interference) protection.Specifically, the specific structure of the electronic equipment provided based on the above embodiment, protection
Structure 130 is located at the lower section of piezoelectric layer 113.Therefore, structure 130 is protected by setting, ultrasound can be influenced to avoid outer signals
Wave sensor 110.
In one of the embodiments, referring to FIG. 2, above-mentioned display screen is active matrix OLED display screen, and show
The anode layer (not shown) of screen is covered on first film transistor array layer 121.Display screen is for example including polaroid
210, cathode layer 220, organic luminous layer 230, TFT and ultrasonic sensor layer 100.Wherein, polaroid 210 is for improving adjustment
The direction of light, to improve optical effect.Cathode layer 220 cooperates jointly with anode layer, to excite organic luminous layer 230 to shine.
TFT and ultrasonic sensor layer 100 include above-mentioned first film transistor array layer 121, glass substrate 122 and supersonic sensing
Device 110.In the active matrix OLED display screen, first film transistor array layer 121 is a circuit in itself, can be determined
Which fixed pixel light emission, which pixel do not shine, and then determine the composition of image.Specifically, above-mentioned active matrix OLED is aobvious
Display screen is hard screen.
Therefore, in above-mentioned active matrix OLED display screen, the ultrasonic wave that ultrasonic sensor 110 issues is passed sequentially through
The surface for displaying images of i.e. reachable display screen after organic luminous layer 230, cathode layer 220, polaroid 210.
Specifically, under the premise of display screen is active matrix OLED display screen, above-mentioned electrode layer 112 is, for example, silver paste
Or ITO (Indium tin oxide, tin indium oxide).Protecting structure 130 is, for example, conducting foam.
In one of the embodiments, referring to FIG. 3, above-mentioned display screen is active matrix type liquid crystal display screen, and it is ultrasonic
Wave sensor 110 is located at the top of the down polaroid 310 in display screen.Display screen for example, upper polaroid 320, colored filter
Mating plate 330, liquid crystal layer 340, TFT and ultrasonic sensor layer 100, down polaroid 310 and backlight 350.
Wherein, backlight 350 provides light source.Down polaroid 310 and the cooperation adjustment radiation direction of upper polaroid 320.TFT and
Ultrasonic sensor layer 100 includes above-mentioned first film transistor array layer 121, glass substrate 122 and ultrasonic sensor
110.Wherein, first film transistor array layer 121 is used to control the windup-degree of liquid crystal molecule.Colored filter 330 is used for
Generate different colors.Therefore, in above-mentioned active matrix liquid crystal display, the ultrasonic wave of the transmitting of ultrasonic sensor 110
Pass sequentially through the table for displaying images of i.e. reachable display screen after liquid crystal layer 340, colored filter 330, upper polaroid 320
Face.
Specifically, under the premise of display screen is active matrix type liquid crystal display screen, protection structure 130 is transparency protected oil
Ink.Transparency protected ink, referring to can be with the protection ink of light transmission, to guarantee that the light that backlight 350 emits can be through super
Sonic sensor 110.
Specifically, under the premise of display screen is active matrix type liquid crystal display screen, the material of electrode layer 112 is ITO.By
Can be with light transmission in ITO, therefore the light that can guarantee that backlight 350 emits can penetrate ultrasonic sensor 110.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of electronic equipment, including display screen；It is characterized in that, being equipped with ultrasonic sensor in the display screen, and described
Each structure of the display location above the ultrasonic sensor being capable of conduct ultrasound；The top surface of the ultrasonic sensor
Towards display screen surface for displaying images, and the ultrasonic sensor can emit ultrasonic wave and receive reflection
Ultrasonic wave, and the ultrasonic wave of reflection is converted into electric signal.
2. electronic equipment according to claim 1, which is characterized in that the display screen includes glass substrate and is located at described
The first film transistor array layer of the top surface of glass substrate.
3. electronic equipment according to claim 2, which is characterized in that the ultrasonic sensor includes the second film crystal
Pipe array layer, electrode layer and piezoelectric layer；Second thin film transistor array layer is set to the bottom surface of the glass substrate；The electricity
Pole layer and piezoelectric layer are set to the lower section of second thin film transistor array layer.
4. electronic equipment according to claim 3, which is characterized in that the electrode layer is located at second thin film transistor (TFT)
Between array layer and the piezoelectric layer.
5. according to electronic equipment described in any one of claim 2 to 4 claim, which is characterized in that the display screen is also
Including protecting structure；The protection structure is set to the bottom of the ultrasonic sensor, and for the ultrasonic sensor
Carry out EMI protection.
6. electronic equipment according to claim 5, which is characterized in that the display screen is that active matrix OLED is shown
Screen, and the anode layer of the display screen is covered on the first film transistor array layer.
7. electronic equipment according to claim 6, which is characterized in that the protection structure is conducting foam.
8. electronic equipment according to claim 5, which is characterized in that the display screen is that active matrix type liquid crystal is shown
Screen, and the ultrasonic sensor is located at the top of the down polaroid in the display screen.
9. electronic equipment according to claim 8, which is characterized in that the protection structure is transparency protected ink.
10. electronic equipment according to claim 8, which is characterized in that the material of the electrode layer is ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710819506.9A CN109492489A (en) | 2017-09-12 | 2017-09-12 | Electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710819506.9A CN109492489A (en) | 2017-09-12 | 2017-09-12 | Electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109492489A true CN109492489A (en) | 2019-03-19 |
Family
ID=65689072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710819506.9A Pending CN109492489A (en) | 2017-09-12 | 2017-09-12 | Electronic equipment |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110298288A (en) * | 2019-06-24 | 2019-10-01 | Oppo广东移动通信有限公司 | Display screen, electronic equipment and its control method |
| CN110807382A (en) * | 2019-10-24 | 2020-02-18 | 维沃移动通信有限公司 | Scanning method and electronic equipment |
| WO2020232947A1 (en) * | 2019-05-23 | 2020-11-26 | 武汉华星光电技术有限公司 | Liquid crystal display module and mobile terminal |
| CN112668457A (en) * | 2020-12-25 | 2021-04-16 | 厦门天马微电子有限公司 | Display screen and electronic equipment |
| CN113219707A (en) * | 2021-05-19 | 2021-08-06 | 业泓科技(成都)有限公司 | Liquid crystal display module and electronic equipment |
-
2017
- 2017-09-12 CN CN201710819506.9A patent/CN109492489A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020232947A1 (en) * | 2019-05-23 | 2020-11-26 | 武汉华星光电技术有限公司 | Liquid crystal display module and mobile terminal |
| US11320685B2 (en) * | 2019-05-23 | 2022-05-03 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Liquid crystal display module and mobile terminal |
| CN110298288A (en) * | 2019-06-24 | 2019-10-01 | Oppo广东移动通信有限公司 | Display screen, electronic equipment and its control method |
| CN110298288B (en) * | 2019-06-24 | 2023-04-07 | Oppo广东移动通信有限公司 | Display screen, electronic equipment and control method thereof |
| CN110807382A (en) * | 2019-10-24 | 2020-02-18 | 维沃移动通信有限公司 | Scanning method and electronic equipment |
| CN110807382B (en) * | 2019-10-24 | 2023-10-17 | 维沃移动通信有限公司 | Scanning method and electronic equipment |
| CN112668457A (en) * | 2020-12-25 | 2021-04-16 | 厦门天马微电子有限公司 | Display screen and electronic equipment |
| CN112668457B (en) * | 2020-12-25 | 2024-01-23 | 厦门天马微电子有限公司 | Display screen and electronic equipment |
| CN113219707A (en) * | 2021-05-19 | 2021-08-06 | 业泓科技(成都)有限公司 | Liquid crystal display module and electronic equipment |
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Address after: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant after: Jiangxi OMS Microelectronics Co.,Ltd. Address before: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant before: OFilm Microelectronics Technology Co.,Ltd. Address after: 330096 No.699 Tianxiang North Avenue, Nanchang hi tech Industrial Development Zone, Nanchang City, Jiangxi Province Applicant after: OFilm Microelectronics Technology Co.,Ltd. Address before: 330029 No. 1189 Jingdong Avenue, Nanchang high tech Zone, Jiangxi Applicant before: NANCHANG OFILM BIO-IDENTIFICATION TECHNOLOGY Co.,Ltd. |