CN109489804B

CN109489804B - Acoustic wave detector

Info

Publication number: CN109489804B
Application number: CN201811490922.XA
Authority: CN
Inventors: 邓海蛟; 张中侠; 王天堃
Original assignee: Zhai Ruxuan
Current assignee: Shandong Luxun Engineering Testing And Appraisal Co ltd
Priority date: 2018-12-07
Filing date: 2018-12-07
Publication date: 2021-09-28
Anticipated expiration: 2038-12-07
Also published as: CN109489804A

Abstract

The invention relates to an acoustic wave detector, which comprises a substrate layer, wherein a semiconductor layer is arranged above the substrate layer, an insulating layer is arranged above the semiconductor layer, a flexible carrier layer is arranged above the insulating layer, a graphene layer is arranged above the flexible carrier layer, the acoustic wave detector is transmitted to the graphene layer through acoustic waves to generate deformation, the dielectric constant of the graphene layer is changed, and the acoustic waves are detected by detecting the change of voltage loaded by the graphene layer; meanwhile, a semiconductor layer of the acoustic detector can be electrically connected with a regulating voltage so as to be used as a grid electrode to regulate and control the dielectric constant of a graphene layer; the graphene layer can be directly incident through incident light, so that the dielectric constant of the graphene layer is changed, and the dielectric constant of the graphene layer is regulated and controlled.

Description

Acoustic wave detector

Technical Field

The invention relates to the technical field of sound wave detection, in particular to a sound wave detector.

Background

Acoustic wave detectors are becoming very important today, either as part of a speech transmission device or can be used as part of a photo acoustic detector in a gas analyzer for analyzing a gas, e.g. ambient air.

A frequently used acoustic wave detector is designed as a capacitive detector, which has two capacitor-defining diaphragms spaced apart from one another. One of the diaphragms is fixed and the other is displaceable by the acoustic wave to be detected. The displacement of the movable diaphragm determines a capacitance change of the capacitor, which can be detected by a suitable read circuit and can be output as an electrical signal from which a characteristic of the sound waves to be detected, for example the sound pressure, can be inferred.

Although the capacitive acoustic wave probe is characterized by high sensitivity, it has many disadvantages mainly caused by its complicated structure.

The disadvantages of the conventional capacitive acoustic wave sensor with regard to its complex structure can be eliminated by a piezoelectric acoustic wave sensor. Such detectors use a membrane made of piezoelectric material that is deformable by the acoustic wave to be detected. The deformation of the piezoelectric film induces a voltage in the piezoelectric film, which can be detected by a suitable read circuit and can be output as an electrical signal from which the characteristics of the acoustic wave to be detected can be deduced.

The existing sound wave detector has a single control mode, cannot be adjusted according to the characteristics of sound waves, can only passively receive the electric signal change caused by the deformation of a piezoelectric material caused by the sound waves, has poor adaptability and is not beneficial to detecting the sound waves in a wider frequency range.

Disclosure of Invention

The invention aims to solve the problems that the existing sound wave detector is single in regulation and control mode and is not beneficial to detecting sound waves in a wider frequency range.

Therefore, the invention provides an acoustic wave detector which comprises a substrate layer, wherein a semiconductor layer is arranged above the substrate layer, an insulating layer is arranged above the semiconductor layer, a flexible carrier layer is arranged above the insulating layer, and a graphene layer is arranged above the flexible carrier layer.

The substrate layer is silicon dioxide.

The semiconductor layer is silicon or gallium arsenide.

The thickness of the semiconductor layer is 2-100 mu m.

The insulating layer is made of silicon dioxide, aluminum oxide and polyethylene.

The thickness of the insulating layer is 20 nm-1000 nm.

The flexible carrier layer is a polydimethylsiloxane polymer.

The flexible carrier layer is 0.1 mm-1 mm.

The flexible carrier layer is arranged in an accordion shape.

The graphene layer is made of a periodic graphene microstructure.

The invention has the beneficial effects that: according to the acoustic wave detector provided by the invention, the acoustic wave is transmitted to the graphene layer to generate deformation, so that the dielectric constant of the graphene layer is changed, and the acoustic wave is detected by detecting the change of the voltage loaded on the graphene layer; meanwhile, a semiconductor layer of the acoustic detector can be electrically connected with a regulating voltage so as to be used as a grid electrode to regulate and control the dielectric constant of a graphene layer; the dielectric constant of the graphene layer can be regulated and controlled by changing the dielectric constant of the graphene layer through the direct incidence of incident light to the graphene layer; in a word, the sound wave detector can not only sense sound waves, but also perform multi-field regulation and control through a light field and an electric field, so that the sound wave detector can perform active regulation and has more flexible frequency regulation characteristics.

The present invention will be described in further detail below with reference to the accompanying drawings.

Drawings

Fig. 1 is a schematic structural diagram of an acoustic wave detector.

Fig. 2 is a schematic structural diagram of a sound wave detector.

Fig. 3 is a schematic structural diagram three of the acoustic wave detector.

Fig. 4 is a fourth schematic structural diagram of the acoustic wave detector.

Fig. 5 is a schematic diagram of a graphene layer structure.

Fig. 6 is a schematic diagram of a graphene layer structure two.

Fig. 7 is a schematic diagram of a graphene layer structure three.

Fig. 8 is a schematic diagram of a graphene layer structure four.

In the figure: 1. a substrate layer; 2. a semiconductor layer; 3. an insulating layer; 4. a flexible carrier layer; 5. a graphene layer; 6. a second graphene layer.

Detailed Description

To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the following detailed description of the embodiments, structural features and effects of the present invention will be made with reference to the accompanying drawings and examples.

Example 1

The problem that the existing sound wave detector is single in regulation and control mode and not beneficial to detecting sound waves in a wider frequency range is solved. The invention provides an acoustic detector as shown in figure 1, which comprises a substrate layer 1, wherein the substrate layer 1 mainly plays a supporting role, the substrate layer 1 can be made of silicon dioxide, quartz, glass and the like, a semiconductor layer 2 is arranged above the substrate layer 1, the semiconductor layer 2 can be electrically connected with an electrode of an external power supply to form a grid control voltage, a controllable electric field is formed between a graphene layer 5 and the semiconductor layer 2, the dielectric constant of the graphene layer 5 can be regulated and controlled through the electric field, an insulating layer 3 is arranged above the semiconductor layer 2, the insulating layer 3 isolates a detection voltage loaded by the graphene layer 5 and the grid control voltage loaded by the semiconductor layer 2 to avoid the mutual influence of the detection voltage and the grid control voltage, a flexible carrier layer 4 is arranged above the insulating layer 3, the graphene layer 5 is arranged above the flexible carrier layer 4 and is used for sensing acoustic waves, the flexible carrier layer 4 can well buffer the deformation of the graphene layer 5, and the transition deformation of the graphene layer 5 is avoided, or the graphene layer cannot recover the original shape after deformation; in addition, the graphene layer 5 can also receive incident light waves, and the incident light waves can change the dielectric constant of the graphene layer 5 to regulate and control the dielectric constant of the graphene layer 5; in practical application, a detection voltage is loaded on the graphene layer 5, a grid control voltage is loaded on the semiconductor layer 2, when sound waves are incident, the graphene layer 5 is influenced to deform, so that the dielectric constant of the graphene layer 5 changes, and the sound wave machine is detected by detecting the change of the loaded detection voltage; meanwhile, the gate control voltage loaded on the semiconductor layer 2 can be changed, so that the electric field between the semiconductor layer 2 and the graphene layer 5 is changed, and the dielectric constant of the graphene layer 5 is regulated and controlled; different light waves can be incident on the graphene layer 5, and the dielectric constant of the graphene layer 5 can be regulated.

Further, a second graphene layer 6 may be disposed between the semiconductor layer 2 and the insulating layer 3, as shown in fig. 6, so as to accelerate the light wave energy absorbed by the semiconductor layer 2 and prevent the sound wave detector from heating, and the added second graphene layer 6 may be communicated with an external heat dissipation system to dissipate heat; the temperature of the sound wave detector is prevented from being too high, and the detection accuracy is prevented from being influenced.

The semiconductor layer 2 is silicon or gallium arsenide.

The thickness of the semiconductor layer 2 is 2 μm to 100 μm, and preferably 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 55 μm, 60 μm, 65 μm, or the like can be selected.

The insulating layer 3 is made of silicon dioxide, aluminum oxide and polyethylene.

The thickness of the insulating layer 3 is 20nm to 1000nm, and preferably 50nm, 100nm, 200nm, 300nm, 400nm, 450nm, or the like can be selected.

The flexible carrier layer 4 is a polydimethylsiloxane polymer.

The flexible carrier layer 4 is 0.1mm to 1mm, and preferably 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, etc. may be selected.

As shown in fig. 2 and 3, the flexible carrier layer 4 is in an accordion-like distribution; the arrangement mode of fold can be the strip of rectangle, also can be the strip distribution of triangle-shaped, like this, can strengthen the deformation space of the graphite alkene layer 5 of top under the acoustic wave effect for graphite alkene layer 5 is more sensitive to the incident of sound wave, thereby improves the sensitivity of system.

The graphene layer 5 is made of a periodic graphene microstructure, and may be an isotropic structure, as shown in fig. 5 and 6; the structure may be an anisotropic structure, as shown in fig. 7 and 8, or may be another periodic structure, which may have an effect on light waves having different characteristics, thereby affecting the dielectric constant of the graphene layer 5.

In summary, the acoustic wave detector transmits acoustic waves to the graphene layer 5 to generate deformation, which causes a change in the dielectric constant of the graphene layer 5, and detects the acoustic waves by detecting a change in the voltage applied to the graphene layer 5; meanwhile, the semiconductor layer 2 of the acoustic detector can be electrically connected with a regulating voltage to form an electric field so as to be used as a grid electrode to regulate and control the dielectric constant of the graphene layer 5; the incident light can also directly enter the graphene layer 5, so that the dielectric constant of the graphene layer 5 is changed, and the dielectric constant of the graphene layer 5 is regulated and controlled; in a word, the sound wave detector can not only sense sound waves, but also perform multi-field regulation and control through a light field and an electric field, so that the sound wave detector can perform active regulation and has more flexible frequency regulation characteristics.

The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims

1. An acoustic wave probe comprising a substrate layer (1), characterized in that: a semiconductor layer (2) is arranged above the substrate layer (1), an insulating layer (3) is arranged above the semiconductor layer (2), a flexible carrier layer (4) is arranged above the insulating layer (3), a graphene layer (5) is arranged above the flexible carrier layer (4), and a second graphene layer (6) is arranged between the semiconductor layer (2) and the insulating layer (3); the flexible carrier layer (4) is distributed in a rectangular or triangular fold shape; the graphene substrate is characterized in that the substrate layer (1) is silicon dioxide, the semiconductor layer (2) is silicon or gallium arsenide, the insulating layer (3) is silicon dioxide, aluminum oxide or polyethylene, the flexible carrier layer (4) is a polydimethylsiloxane polymer, and the graphene layer (5) is made of periodic graphene microstructures.

2. An acoustic wave sensor as claimed in claim 1, wherein: the thickness of the semiconductor layer (2) is 2-100 [ mu ] m.

3. An acoustic wave sensor as claimed in claim 1, wherein: the thickness of the insulating layer (3) is 20 nm-1000 nm.

4. An acoustic wave sensor as claimed in claim 1, wherein: the flexible carrier layer (4) is 0.1 mm-1 mm.