CN1094758A - The damp-proof film of potassium chloride - Google Patents
The damp-proof film of potassium chloride Download PDFInfo
- Publication number
- CN1094758A CN1094758A CN 93104872 CN93104872A CN1094758A CN 1094758 A CN1094758 A CN 1094758A CN 93104872 CN93104872 CN 93104872 CN 93104872 A CN93104872 A CN 93104872A CN 1094758 A CN1094758 A CN 1094758A
- Authority
- CN
- China
- Prior art keywords
- film
- kcl
- damp
- laser
- proof film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The invention provides a kind of Repone K damp-proof film, it is characterized in that, the first layer is a Sodium Fluoride, thickness is 1.7~2.25 μ m, and the second layer is the magnetron sputtering diamond-film-like, and thickness is 500~1000 , the invention has the advantages that at 10.6 μ m reflectivity for a short time, specific absorption is low, anti-continuous CO
2The laser damage threshold height, and have anti-deliquescent ability, therefore be suitable for above and even the industrial and military high power CO of myriawatt as multikilowatt
2The damp-proof film of laser KCl window and lens system, also be suitable for general in, small power infrared optical device and other optical material.
Description
The invention belongs to the technology that on light laser window and lens material Repone K (KCl) crystal, is coated with moistureproof anti-film.The prepared film of the present invention is to be the anti-film of the double-deck resistance of the KCl//NaF//DLC system of Top Coating with magnetron sputtering diamond-like carbon film (DLC).
The present above CO of the multikilowatt of widespread use in laser processing technology
2Laser (wavelength 10.6 μ m) device mostly adopts ZnSe and GaAs window and lens material.But ZnSe and GaAs price are very expensive, can produce toxic substance in process of growth, contaminate environment, and under the high power laser light width of cloth shines, can produce the hot distortion effect of optics.
The KCl crystal sees through wide ranges (0.2~25 μ m), and uptake factor is low, and (at 10.6 μ m is 2 * 10
-4Cm
-1), almost luminescence is learned distortion, easy growing large-size monocrystalline, and price is very cheap, is above superpower industry of multikilowatt and military CO
2Laser ideal window and lens material.But KCl deliquescence devitrification very easily in atmosphere; Be about 7% at 10.6 μ m reflectivity, also must the anti-film of plating resistance when being applied to superpower.Therefore, on the KCl matrix, be coated with and play moisture-proof role and be KCl key in application in laser processing technology the anti-film of the little resistance of laser absorption.
Existing KCl hinders anti-film has the NaF individual layer to hinder anti-film and AS
2S
3, P
6F
2, AS
2S
3Three layers of anti-film system of resistance (seeing U.S. Pat 4,533,593,1985).But the also easy deliquescence of NaF itself, and AS
2S
3Hardness and fusing point are all very low, and the surface is wound and can volatilizing during life-time service under superpower very easily, so these two kinds of films in fact can't life-time service.
Up to now, there is no both at home and abroad and take office how NaF and diamond-like carbon film hinder anti-film as the bilayer of KCl report.
The object of the present invention is to provide the anti-film of resistance of a kind of KCl, the anti-film of this resistance can reduce reflection, can play moisture-proof role again, and to CO
2Laser absorption is very little, makes it be applied to multikilowatt industry and military strong CO
2Laser technology.
Of the present invention constituting: plate duplicature on the KCl matrix, the first layer is a Sodium Fluoride, and thickness is 1.70~2.25 μ m; The second layer is magnetron sputtering diamond-like carbon film (DLC), and thickness is 500~1000
, and at least at a plated film of Repone K matrix.
NaF among the present invention adopts electron beam evaporation to deposit, and back of the body end vacuum tightness is 1~2 * 10
-3Pa, power is 50~120W, selects for use high-purity N aF crystal to make evaporating materials, used evaporation boat material is metal M o.70~150 ℃ of substrate temperatures.Used KCl substrate dimension is φ 30 * 8mm
3, substrate rotation in the deposition process is to improve the homogeneity of thickness.Thickness is controlled with optics film-thickness monitoring (scale value method).
The present invention adopts the dc magnetron sputtering method of high purity graphite target in high-purity argon gas atmosphere to prepare diamond-like carbon film, and the sputtering power scope is 70~400W, and argon is pressed 5~13Pa, the room temperature sputter, and bias voltage is zero, bombarding voltage is zero.
KCl of the present invention hinders anti-film, and the actual infrared external reflection spectrum that records as shown in Figure 2.Almost nil at 10.6 μ m place reflectivity.The sample of double-sided coating is in the absorption of 10.6 μ m (comprising anti-film of resistance and substrate), can hang down through the accurate mensuration of calorimeter method and reach 10
-3, the mean absorption coefficient of the film of Ji Suaning hangs down and reaches 11cm according to this
-1
At multikilowatt industry CO
2The anti-continuous laser damage threshold of laser processing airborne measurements is up to 5.25KW/cm
2, this numerical value is six times of the myriawatt laser window reality power density of being born.
As the DLC of Top Coating, water insoluble, compactness is good, and microhardness can be up to 2700kg/cm
2, Chinese People's Anti-Japanese Military and Political College's gas deliquescence test shows that placed nearly three months at wet environment, the film flawless produces, crystal still keeps vitreous state, does not have any deliquescence sign.
The invention has the advantages that and hinder anti-film by made KCl//NaF//DLC to tie up to 10.6 μ m reflectivity little, absorb low, anti-continuous CO
2Damage from laser threshold values height, and have anti-deliquescent ability, therefore be suitable for above and even the industrial and military high power CO of myriawatt as multikilowatt
2The damp-proof film of laser KCl window and lens system, also be suitable for certainly general in, small power infrared optical device and other optical material.
The KCl//NaF//DLC film system that the present invention is prepared, the very little (see figure 2) of amplitude that its infrared external reflection spectrum changes at 10.6 μ m places, the range of choice of film thickness is bigger, so preparation technology is easy to control, and the preparation process of film does not cause any environmental pollution.Another characteristics of the present invention be with extremely hard diamond-like carbon film as Top Coating, can play protective effect to the KCl surface.
The present invention is further described below in conjunction with accompanying drawing:
Fig. 1 is that KCl//NaF//DLC of the present invention hinders a kind of synoptic diagram that anti-film is, wherein (1) is the DLC(diamond-like carbon film), (2) are NaF, (3) are KCl.
Fig. 2 is that the present invention surveys the infrared external reflection spectrum.Dotted line is uncoated KCl crystalline reflectance spectrum, and solid line is the reflectance spectrum of KCl//NaF//DLC.KCl during plated film, is not about 7% at 10.6 μ m place reflectivity, and by almost nil at 10.6 μ m place reflectivity behind the plated film of the present invention.
Embodiment: at φ 30 * 8mm
3On the KCl substrate, with 88W, 110 ℃ the thick Sodium Fluoride of processing parameter evaporation 2.00 μ m, again with 200W, the process deposits 750 of 9.8Pa
Diamond-film-like, the substrate double-sided coating.Infrared spectrophotometer actual measurement reflectivity only is 0.1%, and the calorimeter method actual measurement is absorbed as 6.0 * 10
-3, the absorption of single face film is low to reach 2.1 * 10
-3Anti-continuous CO
2The damage from laser threshold values is greater than 5.25KW/cm
2
Claims (2)
1, the anti-film of the double-deck resistance of a kind of Repone K (KCl) crystalline system is characterized in that plating duplicature on the Repone K matrix, and the first layer is Sodium Fluoride (NaF), and the second layer is magnetron sputtering diamond-like carbon film (DLC), at least at a plated film of Repone K matrix,
2, the anti-film of double-deck resistance according to claim 1 system is characterized in that the thickness range of Sodium Fluoride and diamond-like carbon film is respectively 1.70~2.25 μ m and 500~1000
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 93104872 CN1033921C (en) | 1993-04-29 | 1993-04-29 | Damp-proof film for potassium chloride crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 93104872 CN1033921C (en) | 1993-04-29 | 1993-04-29 | Damp-proof film for potassium chloride crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1094758A true CN1094758A (en) | 1994-11-09 |
CN1033921C CN1033921C (en) | 1997-01-29 |
Family
ID=4985428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 93104872 Expired - Fee Related CN1033921C (en) | 1993-04-29 | 1993-04-29 | Damp-proof film for potassium chloride crystal |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1033921C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101566485A (en) * | 2008-04-25 | 2009-10-28 | 株式会社三丰 | Scale for photoelectric encoder |
-
1993
- 1993-04-29 CN CN 93104872 patent/CN1033921C/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101566485A (en) * | 2008-04-25 | 2009-10-28 | 株式会社三丰 | Scale for photoelectric encoder |
CN101566485B (en) * | 2008-04-25 | 2014-07-02 | 株式会社三丰 | Grating scale for photoelectric encoder |
Also Published As
Publication number | Publication date |
---|---|
CN1033921C (en) | 1997-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5189550A (en) | Ion-beam based deposition of coatings for electrochromic devices | |
Hamberg et al. | High quality transparent heat reflectors of reactively evaporated indium tin oxide | |
US5051274A (en) | Ion-beam based deposition of coatings for electrochromic devices | |
CA1327294C (en) | Durable sputtered films of metal alloy oxides | |
KR920007499B1 (en) | High transmittance low emissivity article and method of preparation | |
Randhawa et al. | SnO2 films prepared by activated reactive evaporation | |
CA2120877A1 (en) | Durable first and second surface mirrors | |
US4876628A (en) | Thin film ion conducting coating | |
EP0282527A1 (en) | Method for making an amorphous aluminum-nitrogen alloy layer. | |
CN1033921C (en) | Damp-proof film for potassium chloride crystal | |
US3959548A (en) | Graded composition coatings for surface protection of halide optical elements | |
US4579807A (en) | Optical information storage | |
EP0147946A2 (en) | An anti-reflection coating for an infrared transmitting material and laser beam transmitting window or fiber incorporating the same | |
JPH07249316A (en) | Transparent conductive film and transparent substrate using the transparent conductive film | |
Von Rottkay | Influence of stoichiometry on the electrochromic cerium-titanium oxide compounds | |
Meng et al. | Characterization of ZnO films prepared by dc reactive magnetron sputtering at different oxygen partial pressures | |
Itoyama | Properties of Sn-doped indium oxide prepared by high rate and low temperature RF sputtering | |
JPH06274954A (en) | Production of magneto-optical recording medium | |
JPS6196609A (en) | Transparent conductive film | |
US4009300A (en) | Preparation of graded composition protective coatings | |
US3493289A (en) | Coated optical devices | |
Fraser | Sputter-deposited films for display devices | |
US6214482B1 (en) | Dielectric-layer for magneto-optic storage media structures | |
Johnson et al. | Barium fluoride as an internal reflection element for ir-ATR spectroelectrochemistry | |
CN1024481C (en) | Damp-proof film for potassium chloride diamond |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |