CN109463009A - Method for connecting solar battery - Google Patents
Method for connecting solar battery Download PDFInfo
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- CN109463009A CN109463009A CN201780037485.3A CN201780037485A CN109463009A CN 109463009 A CN109463009 A CN 109463009A CN 201780037485 A CN201780037485 A CN 201780037485A CN 109463009 A CN109463009 A CN 109463009A
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- Prior art keywords
- aluminium
- back contact
- zinc
- solar battery
- contact
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000011701 zinc Substances 0.000 claims abstract description 93
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 66
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 59
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 41
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 39
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 18
- 238000005476 soldering Methods 0.000 claims abstract description 16
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 30
- 239000004411 aluminium Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 14
- 238000005219 brazing Methods 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 4
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 claims description 3
- -1 also Substances 0.000 claims description 3
- 239000007767 bonding agent Substances 0.000 claims description 3
- 238000011010 flushing procedure Methods 0.000 claims description 3
- YWMAPNNZOCSAPF-UHFFFAOYSA-N Nickel(1+) Chemical compound [Ni+] YWMAPNNZOCSAPF-UHFFFAOYSA-N 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 229940006444 nickel cation Drugs 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 241001424392 Lucia limbaria Species 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 5
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005115 demineralization Methods 0.000 description 1
- 230000002328 demineralizing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
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- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of methods for connecting solar battery, wherein (a) is deposited on aluminum or aluminum alloy by physical vapour deposition (PVD) on the back side of the semiconductor devices of the first solar battery, and forms aluminium-back contact；(b) with containing Zn2+Alkaline, watery media processes aluminium-back contact, thus the deposited metal zinc on aluminium-back contact, and form zinc-plated aluminium-back contact；(c) by metal connector zinc-plated aluminium-back contact is connect with the hard contact of the second solar battery, wherein the metal connector is by soldering or is adhesively fixed on zinc-plated aluminium-back contact.
Description
Solar battery generally comprises semiconductor devices, which includes the first semiconductor material, the second half leads
Body material and the transitional region (such as also referred to as pn-junction) between both semiconductor materials.It can be to these semiconductor materials
One of material is adulterated, or can also be adulterated to each in these semiconductor materials.By with the first half
First hard contact of conductor material electrical connection and the second hard contact being electrically connected with the second semiconductor material, can measure institute
The voltage of generation.
One of hard contact can be placed on the front or leading flank of solar battery (commonly referred to as front contact), and another
One hard contact is located on the back side of single battery (commonly referred to as back contact).Alternatively it is also known that following solar battery: right
In this solar battery, each hard contact is only located on rear surface of solar cell for example in the form of comb interdigital structure.
In the solar battery of this only rear-face contact, effect of obmubing can reduce.
Aluminium is a kind of silicon-solar battery back-side gold for being particularly well suitable for solar battery, particularly crystallization
The metal of categoryization.Its feature is that conductivity is high, price is low and light reflectance is high.For these reasons, most of industry manufactures
Silicon-solar battery have aluminum electricity back contact, which is covered often through silk-screen printing.The back contact
It is sintered when temperature is more than 800 DEG C, to guarantee that the matrix being made of alumina particles is agglomerated well.Meanwhile aluminium and Silicon Wafer
It is melt into alloy, and is free on wherein by near surface with sizable concentration, thus forms and is suitable for p-type solar battery
, p+The back surface field (BSF) of doping.However, the electric quality of the BSF of aluminium doping is not enough for high performance solar batteries.Boron
The BSF of doping realizes lesser saturation current density for p-type solar battery.For N-shaped solar battery, not
Need n+Doping.In both cases, BSF can be caused tight due to inevitably forming alloy with the contact of silk-screen-aluminium
It is damaged again, or even results in overcompensation.Silk-screen-aluminium further drawback is that high sintering temperature does not allow the dielectric optimized
Surface passivation, this is same to interfere to realize peak efficiencies.Therefore, pass through physical vapour deposition (PVD) (physical vapor
Deposition, PVD) Al back contact is covered on current high performance solar batteries.These Al back contacts are compared to silk
Printing Al has the attendant advantages for improving light reflectance, because they are compacted zones.
Solar battery and PVD-Al- back contact are electrically coupled in series at solar battery string, and this series connection is such as manufacturing too
Positive can be required for battery module, however be a kind of challenge, because the small connecting band of battery that can be conductive is (referred to as: connection
Device) due to the Al that is formed on aluminium quickly2O3Layer and cannot traditionally be soldered on aluminium.
For the technical problem, it is known to a variety of solutions.In one approach, the printing being made of tin is led first
The so-called busbar connector-of line-is covered on aluminium by ultrasonic welding.Then, Cu connector can be soldered to tin busbar connector
On.Such as the 27th of H.v.Campe et al. European photovoltaic solar meeting summary (2012 page 1150) and
" the Adhesion of Al metallization in ultrasonic soldering on the of P.Schmitt et al.
Al rear side of solar cells " (Energy Procedia magazine, 2013) describes this point.Technological challenge
Be cover the equipment and technology cost of tin busbar connector and the fracture rate that improves by the possibility caused by ultrasonic wave action (so-called vibration is rushed
Hit), this can become obvious for thin solar battery.
In another method, steamed passing through heat after deposition of aluminum in the case where not destroying vacuum directly in same equipment
Plating or sputtering cover the metal that can be brazed.It is attached that layer system TiN/Ti/Ag-, NiV/Ag- and NiSi/Ag have shown big connection
Put forth effort." Development of temperature-stable, the solderable PVD rear meta ü of J.Kumm et al.
Ization for industrial Silicon solar cells " (the 28th European photovoltaic solar meeting summary, 2013
Year)；" the Al/Ni:V/Ag metal Stacks as rear side metallization for of V.Jung et al.
Crystalline silicon solar cells " (Progress in Photovoltaics, 2012 page 876) and
" the Ni:Si as barrier material for solderable PVD metallization of of V.Jung et al.
Silicon solar cells " (Energy Procedia, 2013 page 362) describes this point.
In addition, there are also some other joining techniques, such as welding or solder brazing for aluminium.Solar battery is connected
Technology, these joining techniques due to used > 450 DEG C of high temperature and the passivation layer of dielectric degradation related to this and lead to
It is often not applicable.
In another solution, on the solar cell using zinc layers as initial layers, for electrochemically depositing
Nickel and copper." the Zincate processes for silicon solar cell metallization " of Kamp et al.
(Solar Energy Materials&Solar Cells, the 120th phase page 332,2014) describes this point.
Here, depositing zinc on contact in aluminium-back in zincate acid cleaning process, wherein removal aluminium surface is primary first
Then oxide causes the displacement of zinc and aluminium to be reacted, to generate thin zinc layers on aluminium.Pass through electroplating deposition in the zinc layers
And Ni/Cu- stacks of metal layers is deposited, small copper strips is then brazed in the stacks of metal layers.
The object of the present invention is to solar battery is connected by a kind of method, it can be as simple as possible using this method
And effectively solar battery connector is fixed on the hard contact of solar battery.Another object is to provide connection
Solar battery has big adhesive force between the hard contact and solar battery connector of solar battery.
The purpose is achieved by a kind of method for connecting solar battery, wherein
(a) aluminum or aluminum alloy is deposited on by physical vapour deposition (PVD) the back side of the semiconductor devices of the first solar battery
On, and form aluminium-back contact；
(b) with containing Zn2+Alkaline, watery media processes aluminium-back contact, thus the deposited metal zinc on aluminium-back contact,
And form zinc-plated aluminium-back contact；
(c) by metal connector zinc-plated aluminium-back contact is connect with the hard contact of the second solar battery,
In, the metal connector is by soldering or is adhesively fixed on zinc-plated aluminium-back contact.
Within the scope of the present invention it has been found that being that one kind is used to fix metal by the zinc-plated aluminium that wet chemical method obtains
The effectively substrate of connector (such as small copper strips).It is high on the hard contact of solar battery that connector may be implemented
Adhesive strength.It saves and other metal layers (such as passing through plating) is covered on zinc-plated aluminium before soldering connection device.Definitely
Ground says, zinc-plated aluminium has been formed for being brazed or the suitable substrate of bonding connection device.
As already mentioned above, solar battery well known includes semiconductor devices, which includes the first semiconductor material
Material, the second semiconductor material and the transitional region (such as also referred to as pn-junction) between both semiconductor materials.It can be right
One of these semiconductor materials are adulterated, or can also be adulterated to each in these semiconductor materials.
It is touched by the first hard contact being electrically connected with the first semiconductor material and the second metal being electrically connected with the second semiconductor material
Point can measure generated voltage.Within the scope of the present invention, zinc-plated aluminium-back contact forms one of these hard contacts.
Solar battery is preferably silicon-solar battery, such as monocrystalline silicon-solar battery, polysilicon-solar-electricity
Pond or amorphous silicon-solar battery.But method of the invention is also suitable for connecting other solar batteries, such as III-V-half
Conductor-solar battery, II-VI-semiconductor-solar battery, I-III-VI-semiconductor-solar battery or organic solar
Battery.
If those skilled in the art are generally known, when connecting solar battery, these solar batteries pass through gold
Belong to connector to contact with each other.Metal connector is separately fixed at herein on one of hard contact of adjacent solar battery.It is described
Connection can be series connection, or be also possible to be connected in parallel.The series connection of solar battery can also be connected in parallel
It connects and combines.
As already mentioned above, in (a), aluminum or aluminum alloy is deposited on by physical vapour deposition (PVD) the method for the invention the step of
On the back side of the semiconductor devices of first solar battery, and form aluminium-back contact.
Those skilled in the art will know that being used for the suitable method of physical vapour deposition (PVD) metal aluminum or aluminum alloy.To metallic aluminium
Or the physical vapour deposition (PVD) of aluminium alloy for example by evaporation coating method (such as hot evaporation, electron beam evaporation plating, laser beam vapor deposition, electric arc
Vapor deposition or molecular beam epitaxy), sputtering (also referred to as cathodic sputtering method), ion plating or ICB deposit (" Ionized-
Cluster-Beam " (ion cluster beam)-deposition) it carries out.The target being made of heat treatment aluminum or aluminum alloy, or for example, by
The target is bombarded with ion, electronics or laser beam, target material is deposited and is deposited on the semiconductor devices of solar battery.Half
Conductor device is by arrangement, so that being deposited on its back side for aluminum or aluminum alloy carries out.With the usual reason of those skilled in the art
Solve consistent, the back side of semiconductor devices is side opposite with illuminated face (i.e. positive) in the work of solar battery
Face, the side thus form the side of backlight.Hard contact on rear surface of solar cell also referred to as carries on the back contact.
Depending on the type of solar battery (such as monocrystalline or amorphous silicon-solar battery), art technology
Personnel substantially know must how designing semiconductor device (type, doping of the semiconductor material to be used etc.).
Within the scope of the present invention it is possible that the semiconductor devices of solar battery is other than with aluminium-back contact, also
On the front face with the front contact of metal.The front contact can design in a known manner.For example, front contact can have lattice
Grid structure.Front contact can for example be made of silver or silver alloy.Front contact can be when placement aluminium-back contact in step (a)
Just have been positioned on semiconductor devices.Alternatively, front contact can be with aluminium-back contact simultaneously or or in placement aluminium-
Back covers on semiconductor devices after contact.
In order to reduce effect of obmubing, alternatively also it is possible that only in backside contact solar battery, that is, only exist
There are the contacts of metal on the back side of semiconductor devices.This can for example be realized as follows: aluminum or aluminum alloy is depositing
It is etched processing, later thus to obtain two sseparated aluminium-back contact (such as in the form of comb interdigital structure).
The purity of deposited metallic aluminium can along wider range, as long as can not adversely influence electric conductivity and/
Or mechanical property.For example, aluminium contains in total amount accounting less than 1% (weight), preferably smaller than 0.1% (weight) or is less than
Other metallic elements of 0.01% (weight).If the back contact using aluminium alloy as the metal of solar battery, the aluminium
Alloy preferably has the aluminium content of at least 80% (weight), preferably at least 90% (weight).Those skilled in the art will know that can be with
The suitable metallic element of alloy is melt into aluminium.
The thickness of aluminium-back contact obtained can be along wider range in step (a).For example, aluminium-back contact tool
There is the thickness in 0.3 μm~7 μ ms, in preferably 2 μm~4.5 μ ms.
After aluminum or aluminum alloy deposition, optionally also aluminium-back contact can be closed before zinc deposition step (b)
Suitable pretreatment (such as possible organic impurities on removal surface).However this is for the metallic tin that deposits in the step (b)
It is not needed for being attached on the surface of aluminium-back contact well enough.Therefore step can be immediately performed after step (a)
(b)。
As already mentioned above, the method for the invention the step of in (b), with the Zn containing free form2+(i.e. oxidation number is+II
Zinc) alkaline, watery media processes aluminium-back contact, thus the deposited metal zinc on aluminium-back contact, and form zinc-plated aluminium-
Carry on the back contact.
Preferably, there is quite high Zn for handling the watery medium in aluminium-back contact2+Concentration.In a kind of preferred reality
It applies in mode, the Zn in alkaline, watery medium2+Concentration be at least 1.5% (weight), preferably at least 2.0% (weight), more preferably
At least 3.0% (weight), or even at least 4.0% (weight).
In a preferred embodiment, the Zn that watery medium contains2+Concentration is 1.5% (weight)~12.0% (weight
Amount), preferably 2.0% (weight)~10.0% (weight), more preferable 3.0% (weight)~8.0% (weight) or 4.0% (weight
Amount)~8.0% (weight).
Zn2+Exist in a free form, mode is, for example, so that Zn2+Compound (example under conditions of relatively alkaline
Such as relatively high pH value) dissociate in watery medium.Zn2+It can be under conditions of alkalinity for example as zincate (such as [Zn
(Ⅱ)(OH)4]2-Or similar contain Zn2+Form) be present in watery medium.This base to those skilled in the art
It is known on this.
The suitable pH value of alkaline, watery medium for example >=10, preferably >=13.
Optionally, the watery medium of alkalinity can also contain other transition-metal cations, preferably iron-cation, nickel-sun from
The combination of at least two cations in son or copper-cation or these cations.In a preferred embodiment, alkali
It is at least 0.0003% (weight), preferably at least 0.001% (weight), for example 0.0003 that property, watery medium, which also contain concentration,
Fe- cation in~30% (weight) or 0.0003~0.1% (weight) range.If alkalinity, watery medium contain nickel-sun
Ion, then these nickel-cations can for example exist with 0.1~5% (weight), the concentration of preferably 0.5~3% (weight).Such as
Fruit alkalinity, watery medium contain copper-cation, then these copper-cations can for example with 0.01~1% (weight), preferably
The concentration of 0.05~0.5% (weight) exists.
From containing Zn2+Watery medium deposition preferred no power of the metallic zinc on aluminium-back contact carry out.It is obstructed
The metal deposit of electricity is a kind of method of coating implemented without using external power supply.
Those skilled in the art know oneself, use alkaline Zn2+Solution deposits to metallic zinc no power on aluminium-substrate
(for example, zincate methods).In this process, make the Al being located on aluminium first2O3Layer dissociation.Exposed aluminium is oxidized, and
And it is entered in solution as aluminate.Zn2+(such as in the form of zincate) be reduced to be deposited on there are still aluminium on
Metal Zn.
The adhesion that too thin zinc layers will cause soldering or bonding connector is poor.In addition, for too thin zinc layers,
There can be big contact transition resistance between connector and aluminium-back contact.On the other hand, too thick zinc layers cannot fully adhere to
On aluminium-back contact.Preferably, being deposited on the zinc layers on aluminium-back contact has in 0.1 μm~5 μ ms, preferably 0.3 μm
Thickness in~2.5 μ ms.
In general, aluminium-back contact thickness reduces a value during Zn- deposition step (b), which is substantially equal to deposition
The thickness that Zn- layers of metal.
In the middle alkalinity of step (b), watery contain Zn2+Media processes aluminium-back contact duration be, for example, 15s~
250s。
Zinc deposition step (b) preferably carries out under the temperature conditions within the scope of 5-60 DEG C, preferably 5-45 DEG C.
It can be for example by being immersed in containing Zn to the processing of aluminium-back contact2+Medium in carry out, or by with containing
There is Zn2+Medium washes or splash carry out.For this purpose, entire semiconductor devices can with contain Zn2+Media contact (such as
So that entire semiconductor devices is completely immersed in).Alternatively it may be preferred that only making aluminium-back contact and containing Zn2+Medium
Contact.
In a preferred embodiment, during zinc deposition step (b), the back side of semiconductor devices is maintained at basic
Horizontal position, wherein aluminium-back contact downwardly, and with contain Zn2+Watery media contact.The meaning of " basic horizontal "
It is, and the deviation of desirable level position is up to 20%, preferably at most 10%.Alkaline, watery contains Zn2+Medium and water
Aluminium downwardly-back the contact for the semiconductor devices that plain cloth is set can use usual way such as impregnate, rinse or splash
And it contacts.For example, containing Zn2+Medium be located in upper opening of container, also, semiconductor devices is moved on the container
Side's (its mode is, for example, that semiconductor devices is supported on roller), and make containing Zn2+Medium via nozzle towards aluminium-back
Contact splash.It is directed in another modification, such as the semiconductor devices being supported on roller containing Zn2+Medium above,
In, roller is at least partially immersed in containing Zn2+Medium in, and by its rotation watery medium is connect with aluminium-back contact
Touching.
During the step (b), semiconductor devices is horizontally arranged, and aluminium-back contact is downwardly, this is to being deposited on
The microstructure of metal zinc layers on aluminium-back contact has positive influence, and causes further to improve aluminium-back contact and be fixed on it
On solar battery-connector between adhesive force.
Alternatively also it is possible that semiconductor devices is substantially perpendicularly arranged during step (b).But in principle, exist
Any other arrangement (such as obliquely direction) of semiconductor devices is also feasible in step (b).
In a preferred embodiment, aluminium-back contact is during the zinc deposition step (b) relative to containing Zn2+Jie
Matter is mobile.Preferably, Zn is contained with watery in aluminium-back contact2+Medium between relative velocity be at least 0.1m/min, preferably
At least 0.2m/min.This relative movement can be realized for example as follows: so that aluminium-back contact move through it is static
Contain Zn2+Medium, alternatively, make flowing contain Zn2+Medium flow through static aluminium-back contact, or both
Scheme combines.Contain Zn2+Medium flow velocity it is (and then relatively fast relative to (mobile or static) aluminium-back contact
Degree) it can for example be adjusted by pump power.By containing in aluminium-back contact with watery during the step of Zn- is deposited (b)
Zn2+Medium between relative movement, may be implemented further to improve aluminium-back contact and the solar battery-that is fixed thereon
Adhesive force between connector.
If being further described further below, for passing through soldering or the gold being bonded on the aluminium-back contact for being fixed on and plating Zn
For the adhesive strength for belonging to connector, it has been suggested that particularly advantageously, the metal zinc layers deposited in step (b) are as densification
Layer exists, wherein there is also zinc-crystal grain on the surface of fine and close zinc layers, the diameter of these crystal grain is greater than 5.0 μm, and quantity is close
Degree >=800/mm2, preferably >=1000/mm2, more preferably 1000-4000/mm2；And/or wherein, the surface of fine and close zinc layers
At least 1.5%, preferably at least 2.0%, zinc-crystal grain covering of the more preferable 2.0-8.0% by diameter greater than 5.0 μm.
Other than containing relatively large Zn- crystal grain (i.e. > 5.0 μm), the zinc layers of metal are preferably also containing diameter less than 1.0 μm
Significantly smaller zinc-crystal grain, wherein preferably, the major part on the surface of fine and close zinc layers is (such as more than 50% or even
More than these lesser zinc 60%) with diameter less than 1.0 μm-crystal grain covering.Preferably, diameter is greater than 5.0 μm of zinc-crystal grain
Zinc-crystal grain with diameter less than 1.0 μm jointly covers at least 90%, preferably at least the 95% of the surface of fine and close zinc layers.?
Zinc-crystal grain particle size distribution on the surface of fine and close zinc layers may, for example, be double-peak type.
The metal zinc layers of this densification are shown in Fig. 1, the biggish crystal grain with relatively high number density.Zn-
The region that the region where relatively large Zn- crystal grain in layer surface is formed by significantly smaller Zn- particle respectively surrounds.It borrows
The above method parameter of walker rapid (b), can targetedly generate the zinc layers of this metal.
If fixation of the metal connector in zinc layers is carried out by soldering, the relatively big crystal grain with relative high density
This special construction is at least maintained in the region not being brazed.If the fixation is carried out by bonding, metal zinc layers
Special construction can also be maintained in the region of bonding.
Preferably, during the zinc deposition step (b), only aluminium-back contact and contain Zn2+Media contact.Thus it avoids
Other regions of solar battery are corroded by watery media chemistry.
In a preferred embodiment, aluminium-back contact of Zn is plated obtained in step (b) before step (c)
It is rinsed at least once with flushing liquor.Aluminium-back contact first time of plating Zn is rinsed least for before step (c), and can
Selection of land is also for subsequent rinse, preferably using the watery flushing liquor of pH > 8.5, preferably pH > 13.
Preferably, drying for example is given to aluminium-back contact of plating Zn by being suitably heat-treated before step (c).
When necessary, before step (c) execution, step (b) can be repeated at least once more.But consider process efficiency, it is excellent
Step (b) is selected to be only performed once.
If being further described further below, in step (c), metal connector is fixed on plating Zn especially by soldering
Aluminium-back contact on.Therefore, in a kind of optional embodiment, just brazing material can have been covered before step (c)
It is set on the Zn layer of the metal deposited in step (b).It preferably, will at least in the region of metal connector to be fixed
Brazing material covers on Zn layer.Suitable brazing material is it is known to the person skilled in the art that and will be below
Also to be further described.
As already mentioned above, it the method for the invention the step of in (c), plates aluminium-back contact of Zn and passes through metal connector and the
The hard contact of two solar batteries connects, wherein the metal connector is by soldering or is adhesively fixed on the first solar-electricity
On aluminium-back contact of the plating Zn in pond.
Those skilled in the art generally know the metal connector for connecting solar battery.Suitable metal connection
Device can be obtained commercially, or can be made using usual way.
Metal connector is preferably band-like or linear, but other shapes are also feasible in principle.Metal connector is excellent
It is selected as band-like.
If metal connector is fixed on aluminium-back contact of plating Zn by soldering, brazing material such as tin can be used
Or tin-alloy-on-metal connector coating.It this saves and individually supplies brazing material.It is suitable as the tin-of brazing material
Alloy is generally known.Tin-alloy for example contains lead, silver and/or bismuth as alloying element.
Brazing material (preferably tin alloy) is preferably with the melting temperature within the scope of 180 DEG C~245 DEG C.
In a preferred embodiment, metal connector is copper strips, preferably uses tin or tin-alloy layer copper
Band.This " tin plating " copper strips can be obtained commercially.
Soldering preferably lower than 450 DEG C at a temperature of carry out.This is also commonly referred to as solder.Brazing temperature is preferably in
In the range of 175 DEG C~400 DEG C or 175 DEG C~300 DEG C.
In brazing process, using common preferably noncorrosive (" free of cleaning ") solder flux.Solder flux can cover with
On the metal connector (such as tin plating small copper strips) of brazing material coating, and/or cover the deposition in method and step (b)
In zinc layers.
If fixation of the metal connector on the aluminium-back contact for plating Zn is carried out by bonding, preferably using conduction
Bonding agent.What this bonding agent was known to those skilled in the art, and can commercially obtain.
The second solar battery connecting with the first solar battery is preferably again following solar battery: this too
It is positive to have disposed according to the method described above the aluminium-back contact for plating Zn on battery.Hard contact about second solar battery
(such as back contact and front contact, or alternatively only carry on the back contact), thus may refer to described above.
The invention further relates to a kind of solar battery strings comprising at least two sun connected by metal connector
Energy battery, wherein at least one solar battery has aluminium-back contact using metal zinc coating, also, metal connector is straight
It connects and is soldered to or is adhered on aluminium-back contact of plating Zn.
Preferably at least two solar batteries, more preferably each solar battery have the aluminium-using metal zinc coating
Contact is carried on the back, also, distinguishes directly soldering or bonded metal connector on aluminium-back contact of each plating Zn.
Preferably, solar battery string can obtain according to the method described above.
Thus preferably, at least one solar battery in solar battery string in solar battery interconnected
With aluminium-back contact of plating Zn obtained according to the method described above.Preferably, the sun all connected in solar battery string
Energy battery all has aluminium-back contact of plating Zn so obtained.
Preferably, aluminium-back contact of the plating Zn of solar battery has one or more regions, exists in that region
The compacted zone being made of metallic zinc, there are also zinc-crystal grain on the surface of fine and close zinc layers, the diameter of these crystal grain is greater than 5.0 μm,
Number density >=800/mm2, preferably >=1000/mm2, more preferably 1000-4000/mm2；And/or wherein, fine and close zinc layers
Surface at least 1.5%, preferably at least 2.0%, more preferable 2.0-8.0% by diameter greater than 5.0 μm zinc-crystal grain cover.
Other than containing relatively large Zn- crystal grain (i.e. > 5.0 μm), the zinc layers of metal are preferably also containing diameter less than 1.0 μm
Significantly smaller zinc-crystal grain, wherein preferably, the major part on the surface of fine and close zinc layers is (such as more than 50% or even
More than these lesser zinc 60%) with diameter less than 1.0 μm-crystal grain covering.Preferably, diameter is greater than 5.0 μm of zinc-crystal grain
Zinc-crystal grain with diameter less than 1.0 μm jointly covers at least 90%, preferably at least the 95% of the surface of fine and close zinc layers.?
Zinc-crystal grain particle size distribution on the surface of fine and close zinc layers may, for example, be double-peak type.
Crystal grain diameter, the diameter in Zn- layer surface are greater than the number density of 5.0 μm or the Zn- crystal grain less than 1.0 μm
Corresponding apparent surface's coverage with being covered by these Zn- crystal grain, passes through Zn- layers (vertical view) scanning electron micrograph
It (REM- photo) and is determined by analyzing photo with suitable image analysis software.The diameter of crystal grain is exactly round as follows
The area of diameter, the circle is equal to projected area of the crystal grain in REM- photo.
If such as about the 5% of zinc layers surface zinc-crystal grain by diameter greater than 5.0 μm covers, it means that Zn-
This zinc-crystal grain of about the 5% of reflected surface in the REM- photo of vertical view of layer by diameter greater than 5.0 μm covers
Lid.
For example, at least 90%, preferably at least the 97% of aluminium-back contact surface of plating Zn can have this structure, i.e.,
The compacted zone being made of metallic zinc, wherein have some zinc-crystal grain on the surface of zinc layers, the diameter of these crystal grain is greater than 5.0 μ
M, number density >=800/mm2, preferably >=1000/mm2, more preferably 1000-4000/mm2；And/or wherein, the surface of zinc layers
At least 1.5%, preferably at least 2.0%, more preferable 2.0-8.0% by diameter greater than 5.0 μm zinc-crystal grain cover.
It is fixed on aluminium-back contact of plating Zn if metal connector has passed through soldering, in unlocked metal connector
Place, there are the regions of these larger zinc-crystal grain with comparatively high amts density.
If for example, by using Sn- alloy as solder, on aluminium-back contact that metal connector has been soldered to plating Zn
In region, there are a layer with Sn- matrix, the bases between the metal (such as Cu) and aluminum or aluminum alloy of connector
Matter has in the Zn- particle wherein spread.
It is adhesively fixed on aluminium-back contact of plating Zn if metal connector has passed through, has been fixed in metal connector
Also additionally there is the region of these larger zinc-crystal grain with comparatively high amts density in place.
The present invention will further be introduced by following example.
Example
On the back side for the Silicon Wafer (the hereinafter referred to as semiconductor devices of solar battery) that 180 μ m-thicks, p are adulterated, big face
The aluminium of purity > 95% on 3 μm of hot evaporation of product ground.Thus aluminium-back contact is obtained.Between aluminium layer and solar battery, there are one
It is a by Al2O3And SixNyThe layer heap of the dielectric of composition.The layer heap locally uses laser opening in multiple points, to make vapor deposition
The silicon of aluminium and semiconductor devices generates electrical contact.On the front of the semiconductor devices of solar battery, have one with phosphorus thermal expansion
Scattered n+The emitter of doping.There is thin Si on the emitterxNyAnti-reflection layer and silk-screen, argentiferous metal grill, should
Metal grill is used as the front contact of semiconductor devices.
90s handled to aluminium-back contact with aqueous solution at room temperature, the solution contain the zinc-of 4% (weight) from
Iron-ion of son, the NaOH of 15% (weight) and 0.001% (weight).Here, the semiconductor devices of solar battery is horizontally
Arrangement, wherein downwardly, also, chemical solution flows through aluminium-back contact with the speed of 0.3m/min from below for aluminium-back contact.
In this case, 1 μm of zinc is deposited, and dissolves about 1 μm of aluminium.Then, the semiconductor devices still horizontally arranged
It is rinsed from following with 1% sodium hydroxide solution, is then rinsed from following with the water of demineralization.In zinc deposition step
In, only aluminium-back contact is contacted with the solution of wet-chemical.
Fig. 1 shows the REM- photo on aluminium-back contact surface of plating Zn.The photograph illustrate fine and close metallic zinc-layer,
This layer has big zinc-crystal grain of relatively high share, and the diameter of these crystal grain is at least 5 μm.Diameter is greater than 5 μm of zinc-crystal grain
With 1736/mm2Number density exist.The 3.5% of metallic zinc-layer surface is at least 5 μm of zinc-crystal grain covering with diameter.
After solar battery is dry, the resistance brazing mechanism at 245 DEG C through electric resistor heating type is tin plating
Small copper strips be soldered on zinc-plated aluminium-back contact up to 5s, which has 130 μm of copper thickness and 15 μm of two sides
Sn/Pb/Ag- coating.Tin plating small copper strips has been helped weldering with the rinse-free flux that the trade mark of Kester company is 952s in advance
Processing.
The small copper strips on aluminium-back contact for being fixed on plating Zn, it has been determined that withdrawal force.The width of reference connector,
Connector-withdrawal force appropriate is average more than 1.5N/mm.It is possible thereby to realize the aluminium-in solar battery of metal connector
Carry on the back the high adhesive strength on contact.
The end of the projection of connector is soldered to another solar battery in known manner in subsequent soldering processes
Front on.A solar battery string is obtained, in the solar battery string, each solar battery is connected in series.Respectively
Solar battery string glass, ethylene-propylene acetate and polymer-back side film are laminated to module.
Claims (13)
1. a kind of method for connecting solar battery, wherein
(a) aluminum or aluminum alloy is deposited on by physical vapour deposition (PVD) on the back side of semiconductor devices of the first solar battery,
And form aluminium-back contact；
(b) with containing Zn2+Alkaline, watery media processes aluminium-back contact, thus the deposited metal zinc on aluminium-back contact, and shape
At zinc-plated aluminium-back contact；
(c) by metal connector zinc-plated aluminium-back contact is connect with the hard contact of the second solar battery, wherein
The metal connector is by soldering or is adhesively fixed on zinc-plated aluminium-back contact.
2. the method for claim 1, wherein the solar battery is silicon-solar battery；And/or wherein, in step
Suddenly the thickness of the aluminium-back contact obtained has the thickness in 0.3 μm~7 μ ms in (a1).
3. method according to claim 1 or 2, wherein the watery medium of alkalinity contains concentration and is at least 1.5% (weight)
Zn2+；And/or wherein, the watery medium of alkalinity additionally contain iron-cation, nickel-cation, copper-cation or these
The combination of at least two cations in cation.
4. method as described in any one of the preceding claims, wherein deposition of the metallic zinc on the aluminium-back contact is obstructed
It carries out electricly；And/or wherein, being deposited on the zinc layers on the aluminium-back contact has the thickness in 0.1 μm~5 μ ms.
5. method as described in any one of the preceding claims, wherein during the step (b), the semiconductor devices
Be maintained at the position of basic horizontal, in this case, the aluminium-back contact downwardly, and with contain Zn2+The medium
Contact.
6. method as described in any one of the preceding claims, wherein the semiconductor devices is relative to containing Zn2+It is described
Medium is mobile, also, the aluminium-back contact and contains Zn2+The medium between relative velocity be at least 0.1m/min.
7. method as described in any one of the preceding claims, wherein plate the aluminium-back contact of Zn before step (c)
It is rinsed at least once with alkaline flushing liquor；And/or wherein, the aluminium-back contact of plating Zn is done before step (c)
It is dry.
8. method as described in any one of the preceding claims, wherein with brazing material to the metal connector and/or plating
The aluminium of Zn-back contact coating；And/or wherein, it is described soldering lower than 450 DEG C at a temperature of carry out.
9. such as method according to any one of claims 1 to 7, wherein the bonding is carried out using conductive bonding agent.
10. a kind of solar battery string comprising at least two solar batteries connected by metal connector, wherein
At least one solar battery has aluminium-back contact using metal zinc coating, also, metal connector is directly soldered to or glues
It is connected on aluminium-back contact of plating Zn.
11. solar battery string as claimed in claim 10, wherein aluminium-back contact of the plating Zn of solar battery has one
There is the compacted zone being made of metallic zinc in a or multiple regions, wherein on the surface of fine and close zinc layers also in this region
There is zinc-crystal grain, the diameter of these crystal grain is greater than 5.0 μm, number density >=800/mm2；And/or wherein, the table of fine and close zinc layers
Zinc-crystal grain of at least the 1.5% of face by diameter greater than 5.0 μm covers.
12. solar battery string as claimed in claim 11, wherein there are also diameters to be less than on the surface of fine and close zinc layers
1.0 μm of zinc-crystal grain, also, zinc-crystal grain and diameter zinc-crystal grain less than 1.0 μm of the diameter greater than 5.0 μm jointly covers
At least the 90% of the surface of fine and close zinc layers.
13. the solar battery string as described in any one of claim 10~12 is to use according to claim 1~9 to appoint
What one method obtained.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016210908.1 | 2016-06-19 | ||
| DE102016210908.1A DE102016210908A1 (en) | 2016-06-19 | 2016-06-19 | Method for interconnecting solar cells |
| PCT/EP2017/064799 WO2017220444A1 (en) | 2016-06-19 | 2017-06-16 | Method for interconnecting solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109463009A true CN109463009A (en) | 2019-03-12 |
Family
ID=59067680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780037485.3A Pending CN109463009A (en) | 2016-06-19 | 2017-06-16 | Method for connecting solar battery |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3472869A1 (en) |
| CN (1) | CN109463009A (en) |
| DE (1) | DE102016210908A1 (en) |
| WO (1) | WO2017220444A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100219535A1 (en) * | 2009-02-27 | 2010-09-02 | Kutzer Martin | Method for producing a semiconductor component |
| CN102769067A (en) * | 2011-05-05 | 2012-11-07 | 太阳能界先趋有限公司 | Method for backside-contacting a silicon solar cell, and silicon solar cell with backside-contacting |
| CN104584230A (en) * | 2012-08-10 | 2015-04-29 | 弗劳恩霍弗实用研究促进协会 | Laser-based method and machining table for metallising the back of a semiconductor component |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2012229161A1 (en) * | 2011-03-11 | 2013-09-26 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| KR20140110971A (en) * | 2011-12-23 | 2014-09-17 | 솔렉셀, 인크. | High productivity spray processing for semiconductor metallization and interconnects |
| WO2013116876A2 (en) * | 2012-02-03 | 2013-08-08 | Avery Dennison Corporation | Sheet assembly with aluminum based electrodes |
| US9362427B2 (en) * | 2013-12-20 | 2016-06-07 | Sunpower Corporation | Metallization of solar cells |
-
2016
- 2016-06-19 DE DE102016210908.1A patent/DE102016210908A1/en not_active Withdrawn
-
2017
- 2017-06-16 CN CN201780037485.3A patent/CN109463009A/en active Pending
- 2017-06-16 WO PCT/EP2017/064799 patent/WO2017220444A1/en unknown
- 2017-06-16 EP EP17730486.2A patent/EP3472869A1/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100219535A1 (en) * | 2009-02-27 | 2010-09-02 | Kutzer Martin | Method for producing a semiconductor component |
| CN102769067A (en) * | 2011-05-05 | 2012-11-07 | 太阳能界先趋有限公司 | Method for backside-contacting a silicon solar cell, and silicon solar cell with backside-contacting |
| CN104584230A (en) * | 2012-08-10 | 2015-04-29 | 弗劳恩霍弗实用研究促进协会 | Laser-based method and machining table for metallising the back of a semiconductor component |
Non-Patent Citations (1)
| Title |
|---|
| KAMP, M等: "Zincate processes for silicon solar cell metallization", 《SOLAR ENERGY MATERIALS AND SOLAR CELLS》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102016210908A1 (en) | 2017-12-21 |
| EP3472869A1 (en) | 2019-04-24 |
| WO2017220444A1 (en) | 2017-12-28 |
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