CN109462143A - A kind of DBR growing method, distributed bragg reflector mirror and vertical cavity surface emitting laser applied in VCSEL - Google Patents
A kind of DBR growing method, distributed bragg reflector mirror and vertical cavity surface emitting laser applied in VCSEL Download PDFInfo
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- CN109462143A CN109462143A CN201811153652.3A CN201811153652A CN109462143A CN 109462143 A CN109462143 A CN 109462143A CN 201811153652 A CN201811153652 A CN 201811153652A CN 109462143 A CN109462143 A CN 109462143A
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- dbr
- distributed bragg
- bragg reflector
- refractive index
- growing method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of DBR growing method, distributed bragg reflector mirror and vertical cavity surface emitting lasers applied in VCSEL, pass through the doping concentration at periodic adjustment DBR reflector interface, the tunnel current for increasing tunnel-effect formation by delta heavy doping, can reduce corresponding series resistance.With the increase of doping concentration, the total series resistance for periodically adulterating reflecting mirror is significantly reduced, and reduces the thickness of homotype hetero-junctions surface depletion layer.These hetero-junctions surfaces correspond to the node (node) of optical standing wave in DBR, since the optical density of these heavily doped regions is low, so free-carrier Absorption is little.Therefore, periodically doping reflecting mirror possesses low resistance and high reflectance.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of DBR growing method applied in VCSEL, distribution
Formula Bragg mirror and vertical cavity surface emitting laser.
Background technique
The active area thickness of vertical cavity surface emitting laser (VCSEL) only has several nanometers, and gain by one path is very low.To realize
Lasing must on the active area, lower two sides growth distribution Bragg mirror (DBR).Typical DBR mirror structure is to pass through
The high reflectance of expected design is obtained to tens periods of high and low refractive index film alternating growth of 1/4 wavelength thickness.In order to protect
Demonstrate,proving DBR has very high reflectivity and wider reflection bandwidth, constitutes two kinds of materials of distribution Bragg reflector basic cycle
There should be refringence big as far as possible, but the two kinds of material forbidden bandwidths that will also result in saltant type DBR in this way differ greatly,
So that their homotype hetero-junctions has very big series resistance, keep VCSEL device heating serious, causes lasing difficult.?
In VCSEL, there is the effective masses in biggish potential barrier, especially hole in interface for the homotype hetero-junctions that p-type DBR layer is formed
It is larger, therefore this potential barrier causes p-type DBR to have very high series resistance, causes the fever of p-type DBR very serious, heat dissipates not
Go out will to cause VCSEL internal temperature to increase, to influence device performance, as threshold current increases, internal quantum efficiency decline,
Excitation wavelength change etc..Therefore reduce p-type DBR series resistance be realize VCSEL room temperature continuous-wave lasing critical issue it
One.
The previous technology for reducing DBR series resistance is all an attempt to guarantee that in each period be still the quarter-wave of standard
Under the premise of long thickness, insertion stepped ramp type or linear change content gradually variational layer between two kinds of high and low refractive index materials, such one
To substantially reduce potential barrier between homotype hetero-junctions, so that the series resistance of DBR is made to have the reduction of the order of magnitude, so as to improve
The performance of VCSEL.Due to being inserted into graded bedding, DBR reflection bandwidth is not only made to narrow, while graded bedding also increases more boundaries
Face causes Interface Absorption to enhance, reflectivity decline.
In view of this, the present invention is specifically proposed.
Summary of the invention
The object of the present invention is to provide a kind of DBR growing method applied in VCSEL, distributed bragg reflector mirror and
Vertical cavity surface emitting laser, to solve problems of the prior art.
To achieve the goals above, a kind of DBR growing method applied in VCSEL provided by the invention, the DBR are raw
Long method includes in the growth cycle of the material crystals of at least one distributed bragg reflector mirror, to the light of the material crystals
Delta heavy doping is carried out at the heterojunction boundary of standing wave node.
Further, the distributed bragg reflector mirror uses AlxGa1-xAs, wherein the value of X be 0.7-0.99 and/
Or 0.01-0.25.
Further, the distributed bragg reflector mirror is p-type distributed bragg reflector mirror, the material crystals
The heterojunction boundary of optical standing wave node is Al0.7-0.99Ga0.01-0.3As/Al0.01-0.25Ga0.75-0.99The interface As, the delta weight
The doped source of doping is C or Be.
Further, the distributed bragg reflector mirror is N-type distributed bragg reflector mirror, the material crystals
The heterojunction boundary of optical standing wave node is Al0.01-0.25Ga0.75-0.99As/Al0.7-0.99Ga0.01-0.3The interface As, the delta weight
The doped source of doping is Si.
Further, the delta heavy dopant concentration range is 1 × 1012~5 × 1013cm-2。
Further or preferably, the DBR growing method includes the Distributed Bragg Reflection in several pairs of alternating growths
It is heavily doped to delta is carried out at the heterojunction boundary of the optical standing wave node of the material crystals in the growth cycle of the material crystals of mirror
It is miscellaneous.
Second aspect, the present invention provide it is a kind of by preceding method obtain be applied to vertical cavity surface emitting laser in
Distributed bragg reflector mirror, which is characterized in that the distributed bragg reflector mirror includes the high refraction of several pairs of alternating growths
Rate material layer and low refractive index material layer, the high refractive index material layer and low-refraction material of at least one period alternating growth
The bed of material is greater than the high refractive index material layer and low refractive index material layer in the impurity concentration of the heterojunction boundary of its optical standing wave node
The impurity concentration at other interfaces.
Further, the heterojunction boundary of the high refractive index material layer and low refractive index material layer in its optical standing wave node
Impurity concentration range be 1 × 1012~5 × 1013cm-2。
Preferably, the high refractive index material layer is Al0.01-0.25Ga0.75-0.99As, low refractive index material layer Al0.7- 0.99Ga0.01-0.3As。
The third aspect, the present invention provide a kind of vertical cavity surface emitting laser comprising distributed Bragg above-mentioned is anti-
Penetrate mirror.
A kind of DBR growing method applied in VCSEL provided by the invention, passes through periodic adjustment DBR reflecting mirror circle
Doping concentration at face is increased the tunnel current of tunnel-effect formation by delta heavy doping, can reduce corresponding string
Join resistance.With the increase of doping concentration, the total series resistance for periodically adulterating reflecting mirror is significantly reduced, and reduces homotype
The thickness of hetero-junctions surface depletion layer.These hetero-junctions surfaces correspond to the node (node) of optical standing wave in DBR, since these are heavy
The optical density of doped region is low, so free-carrier Absorption is little.Therefore, periodically doping reflecting mirror possesses low resistance and height is anti-
Penetrate rate.
Specific embodiment
A kind of DBR growing method applied in VCSEL provided by the invention comprising at least one distributed Bradley
In the growth cycle of the material crystals of lattice reflecting mirror, along material crystals epitaxial growth direction, to the optical standing wave knot of the material crystals
Delta heavy doping is carried out at the heterojunction boundary of point.Wherein, homotype hetero-junctions refers to identical two different by conduction type
The hetero-junctions that semiconductor single crystal material is formed；Ideal delta doping refers to that doping concentration of the impurity in the direction of growth is presented
A delta function out.Such as in table 1, Al has been grown0.7-0.99Ga0.01-0.3After As epitaxial layer, only logical impurity source, is allowed miscellaneous
After matter atom covers a certain concentration, then regrowth Al0.01-0.25Ga0.75-0.99As epitaxial layer, in this way in Al0.7-0.99Ga0.01- 0.3As/Al0.01-0.25Ga0.75-0.99The doping that the interface As is formed is exactly delta doping；Delta heavy doping is carried out at the interface
Effect be that the tunnel current that tunnel-effect is formed is increased by delta heavy doping, to reduce series resistance and reduce DBR
Pressure drop；In addition, corresponding in DBR at optical standing wave node (node) in DBR heterojunction boundary, heavy doping is carried out in the node, it is wrong
It has opened at the wave crest of optical standing wave, while guaranteeing a cycle is still the length integrality of λ/2, has avoided the occurrence of since standing wave is distributed
Light field at its wave crest light intensity it is maximum, the case where DBR reflectance loss caused by interface light absorption is relatively strong increases.It should be understood that
, the specific location of optical standing wave node (node) is calculated by this field conventional means in material crystals,
It does not constitute to concrete restriction of the invention, such as can be the interface of the i.e. two kinds index layers at homotype heterojunction boundary
Place.
In embodiment provided by the invention, (mixed with P (doped source is C or Be), N with high and low refractive index layer respectively
Miscellaneous source is Si) type AlxGa1-xAs distributed bragg reflector mirror is example to be illustrated, and provides table 1,2, table respectively
The value of middle X is 0.7-0.99 and/or 0.01-0.25；This range of 0.7-0.99 is taken to constitute low refractive index material layer, at it
The value of middle X can be 0.8 or 0.9；Take this range high refractive index material layer of 0.01-0.25, the value of wherein X can be with
It is 0.10 or 0.12；
Example 1, distributed bragg reflector mirror are p-type distributed bragg reflector mirror, the optical standing wave of the material crystals
The heterojunction boundary of node is Al0.7-0.99Ga0.01-0.3As/Al0.01-0.25Ga0.75-0.99The interface As；
As shown in the table 1, one of growth cycle refers to, alternating growth a pair of Al0.7-0.99Ga0.01-0.3As/
Al0.01-0.25Ga0.75-0.99As crystal, respectively in Al0.7-0.99Ga0.01-0.3As and Al0.01-0.25Ga0.75-0.99Interface between As
Carry out the delta heavy doping of C or Be；
Example 2, distributed bragg reflector mirror are N-type distributed bragg reflector mirror, the optical standing wave of the material crystals
The heterojunction boundary of node is Al0.01-0.25Ga0.75-0.99As/Al0.7-0.99Ga0.01-0.3The interface As；
As shown in the table 2, one of growth cycle refers to, alternating growth a pair of Al0.01-0.25Ga0.75-0.99As/
Al0.7-0.99Ga0.01-0.3As crystal, respectively in Al0.01-0.25Ga0.75-0.99As and Al0.7-0.99Ga0.01-0.3Interface between As into
Row delta heavy doping.
Above-mentioned example is using three growth cycles as example, it should be appreciated that those skilled in the art, raw
Macrocyclic number is by depending on DBR design requirement, the periodicity in example is not constituted to concrete restriction of the invention.
Layer is level (number) in table, and Material is material, X AlxGa1-xThe value of X, delta in As
Doping (doping) is delta heavy doping.
In an embodiment of the present invention, delta heavy dopant concentration range is 1 × 1012~5 × 1013cm-2。
Second aspect, the present invention provides a kind of Distributed Bragg Reflections applied in vertical cavity surface emitting laser
Mirror, the distributed bragg reflector mirror include the high refractive index material layer and low refractive index material layer of several pairs of alternating growths, until
Few two pairs of adjacent high refractive index material layers and low refractive index material layer its optical standing wave node heterojunction boundary it is miscellaneous
Matter concentration is greater than the impurity concentration of this two pairs adjacent high refractive index material layers and the other interfaces of low refractive index material layer.?
In the present embodiment, high refractive index material layer Al0.01-0.25Ga0.75-0.99As, low refractive index material layer Al0.7-0.99Ga0.01- 0.3As。
In an embodiment of the present invention, the adjacent high refractive index material layer and low refractive index material layer are in its optical standing wave
The impurity concentration range of the heterojunction boundary of node is 1 × 1012~5 × 1013cm-2。
The third aspect, the present invention provide a kind of vertical cavity surface emitting laser comprising distributed Bragg above-mentioned is anti-
Penetrate mirror.
Specific case used herein elaborates inventive concept, the explanation of above example is only intended to
Help understands core of the invention thought.It should be pointed out that for those skilled in the art, not departing from this
Under the premise of inventive concept, any obvious modification, equivalent replacement or the other improvements made should be included in the present invention
Protection scope within.
Claims (10)
1. a kind of DBR growing method applied in VCSEL, which is characterized in that the DBR growing method is included at least one
In the growth cycle of the material crystals of distributed bragg reflector mirror, to the heterojunction boundary of the optical standing wave node of the material crystals
Place carries out delta heavy doping.
2. DBR growing method according to claim 1, which is characterized in that the distributed bragg reflector mirror uses
AlxGa1-xAs, wherein the value of X is 0.7-0.99 and/or 0.01-0.25.
3. DBR growing method according to claim 2, which is characterized in that the distributed bragg reflector mirror is p-type point
Cloth Bragg mirror, the heterojunction boundary of the optical standing wave node of the material crystals are Al0.7-0.99Ga0.01-0.3As/
Al0.01-0.25Ga0.75-0.99The interface As, the doped source of the delta heavy doping are C or Be.
4. DBR growing method according to claim 2, which is characterized in that the distributed bragg reflector mirror is N-type point
Cloth Bragg mirror, the heterojunction boundary of the optical standing wave node of the material crystals are Al0.01-0.25Ga0.75-0.99As/
Al0.7-0.99Ga0.01-0.3The interface As, the doped source of the delta heavy doping are Si.
5. DBR growing method according to claim 3 or 4, which is characterized in that the delta heavy dopant concentration range is 1
×1012~5 × 1013cm-2。
6. DBR growing method according to any one of claims 1 to 4, which is characterized in that the DBR growing method is included in
In the growth cycle of the material crystals of the distributed bragg reflector mirror of several pairs of alternating growths, to the optical standing wave of the material crystals
Delta heavy doping is carried out at the heterojunction boundary of node.
7. a kind of distributed bragg reflector mirror that the DBR growing method by as described in claim 1 to 6 is any is prepared,
It is characterized in that, the distributed bragg reflector mirror includes the high refractive index material layer and low-refraction material of several pairs of alternating growths
The bed of material, the high refractive index material layer and low refractive index material layer of at least one period alternating growth are in its optical standing wave node
The impurity concentration of heterojunction boundary is greater than the impurity concentration of the high refractive index material layer and the other interfaces of low refractive index material layer.
8. distributed bragg reflector mirror according to claim 7, which is characterized in that the high refractive index material layer and low
Refractive index material is 1 × 10 in the impurity concentration range of the heterojunction boundary of its optical standing wave node12~5 × 1013cm-2。
9. distributed bragg reflector mirror according to claim 7, which is characterized in that the high refractive index material layer is
Al0.01-0.25Ga0.75-0.99As, low refractive index material layer Al0.7-0.99Ga0.01-0.3As。
10. a kind of vertical cavity surface emitting laser, which is characterized in that the vertical cavity surface emitting laser includes such as claim 7
To 9 any distributed bragg reflector mirrors.
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| CN201811153652.3A CN109462143A (en) | 2018-09-30 | 2018-09-30 | A kind of DBR growing method, distributed bragg reflector mirror and vertical cavity surface emitting laser applied in VCSEL |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212407A (en) * | 2019-07-08 | 2019-09-06 | 苏州长瑞光电有限公司 | Vertical cavity surface emitting laser and its power regulating method |
| CN112002788A (en) * | 2020-09-03 | 2020-11-27 | 中国科学院半导体研究所 | III-nitride-based distributed Bragg reflector and preparation method thereof |
| CN113258440A (en) * | 2021-06-01 | 2021-08-13 | 福建慧芯激光科技有限公司 | High-efficiency vertical cavity surface emitting laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW410495B (en) * | 1998-08-31 | 2000-11-01 | Hewlett Packard Co | Semiconductor laser having CO-doped distributed bragg reflectors |
| CN101510665A (en) * | 2008-02-13 | 2009-08-19 | 富士施乐株式会社 | Laser, module, optical transmission device, optical transmission device and system |
| CN102427105A (en) * | 2011-11-09 | 2012-04-25 | 厦门乾照光电股份有限公司 | Light emitting diode having distributed Bragg reflector with modulation doping structure |
-
2018
- 2018-09-30 CN CN201811153652.3A patent/CN109462143A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW410495B (en) * | 1998-08-31 | 2000-11-01 | Hewlett Packard Co | Semiconductor laser having CO-doped distributed bragg reflectors |
| CN101510665A (en) * | 2008-02-13 | 2009-08-19 | 富士施乐株式会社 | Laser, module, optical transmission device, optical transmission device and system |
| CN102427105A (en) * | 2011-11-09 | 2012-04-25 | 厦门乾照光电股份有限公司 | Light emitting diode having distributed Bragg reflector with modulation doping structure |
Non-Patent Citations (2)
| Title |
|---|
| NOBUAKI HATORI ET AL.: ""An Over 10-Gb/s Transmission Experiment Using a p-Type Delta-Doped InGaAs–GaAs Quantum-Well Vertical-Cavity Surface-Emitting Laser"", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
| 李特 等: ""980nm底发射VCSEL的DBR设计与优化"", 《中国科学（F辑：信息科学）》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212407A (en) * | 2019-07-08 | 2019-09-06 | 苏州长瑞光电有限公司 | Vertical cavity surface emitting laser and its power regulating method |
| CN110212407B (en) * | 2019-07-08 | 2024-02-09 | 苏州长瑞光电有限公司 | Vertical cavity surface emitting laser and power adjusting method thereof |
| CN112002788A (en) * | 2020-09-03 | 2020-11-27 | 中国科学院半导体研究所 | III-nitride-based distributed Bragg reflector and preparation method thereof |
| CN113258440A (en) * | 2021-06-01 | 2021-08-13 | 福建慧芯激光科技有限公司 | High-efficiency vertical cavity surface emitting laser |
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Application publication date: 20190312 |