CN109461810A - A kind of ultrafast electron-transport piezoelectric harvester and preparation method thereof - Google Patents
A kind of ultrafast electron-transport piezoelectric harvester and preparation method thereof Download PDFInfo
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- H10N30/306—Cantilevers
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Abstract
The invention discloses a kind of ultrafast electron-transport piezoelectric harvesters and preparation method thereof, including quantum dot charge transmission piezoelectric energy-capturing plate and fixed device, quantum dot charge transmits piezoelectric energy-capturing plate and connect with fixed device, it includes substrate, piezoelectric element layer and N-type quantum dot charge transport layer that quantum dot charge, which transmits piezoelectric energy-capturing plate, and piezoelectric element layer and N-type quantum dot charge transport layer are successively layed on substrate.Realization, which directly rectifies the AC energy that piezoelectric element layer generates, is converted into direct current energy and the supper-fast outflow of energy, it no longer needs to install external energy Acquisition Circuit additional, the loss of electric energy is greatly reduced, convenient for the integrated of device and miniaturization, improves the energy acquisition transformation efficiency of piezoelectric energy-capturing device.
Description
Technical field
The present invention relates to energy acquisition technical fields, and in particular to a kind of ultrafast electron-transport piezoelectric harvester and its preparation
Method.
Background technique
Mechanical energy based on piezoelectric effect-electric energy conversion process can be by mechanical energy such as noise unemployed in environment, vibration
Dynamic, human motion etc. is converted into electric energy.Relative to other environmental energy acquisition modes, piezoelectric type energy acquisition can continue, surely
It the advantages that fixed, economic acquisition ambient vibration energy, energy density is high, structure is simple, fever is small, without electromagnetic interference, can
Become the new self-powereds such as internet of things equipment, sensor network nodes, wearable or implantation electronic equipment instead of electrochemical cell
Power supply causes the common concern of the different ambits such as material science, information, automatic control.
Piezoelectric type energy energy accumulator can use mechanical oscillation and produce electricl energy.Researcher makes great efforts optimization electromechanical structure, and
Necessary external charge transmission circuit is designed, to provide high power and charge transmission output for battery.The complicated of mechanical structure becomes
The charge that shape results in opposite polarity appears in the identical surface of piezoelectric material, thus positive and negative charge be easy to occur it is compound, only
Have to efficiently separate these positive and negative charges and quickly conduct and can just obtain high performance piezoelectric energy energy accumulator to external circuit.So
And since the piezoelectricity generation charge usual service life is shorter, and body material volume is larger.Under normal conditions, electronics is from generating to burying in oblivion
Move distance is less than body material radius, so the pressure point charge generated does not greatly pass to external circuit also and just answered
It closes, causes the loss of electric energy.In quanta point material, since quantum dot volume is minimum, pressure point charge can be made there are enough longevity
Life reaches the surface of quantum dot to effectively separate positive and negative charge, and quickly reaches external circuit, can substantially reduce electric energy
Loss.
When piezoelectric harvester works normally, quantum dot can be regulated and controled because of its band structure by size, it is possible to numerous pressures
The energy level of electric material matches, and becomes a kind of excellent charge transport materials.Wherein, N-type semiconductor quantum dot transmission material exists
While having both quantum dot ultrafast electronics conduction, internal donor impurity can provide more electronics to conduction band, so that current-carrying
Electron concentration dramatically increases in sub- transmission process, and internal negative electrical charge (electronics) transmission rate is far longer than positive charge (hole)
The transmission rate of transmission rate, positive charge (hole) is negligible.Macro manifestations are the negative electrical charge that piezoelectric material surface generates
(electronics) will cannot pass through quantum dot transmission of materials, quantum by quantum dot transmission of materials to metal electrode, positive charge (hole)
Point material just directly instead of the effect of external charge transmission circuit, realizes certainly the alternating current that piezoelectric harvester generates simultaneously
Charge transmission, also improves energy acquisition and transformation efficiency.
Summary of the invention
The technical problem to be solved by the present invention is in view of the foregoing defects the prior art has, provide a kind of ultrafast electricity
Son transmission piezoelectric harvester and preparation method thereof, realization, which directly rectifies the AC energy that piezoelectric element layer generates, is converted into direct current
Electric energy and the supper-fast output of energy no longer need to the charge transmission electric current outside installing additional, greatly reduce the loss of electric energy, be convenient for device
It is integrated with miniaturization, improve the energy acquisition transformation efficiency of piezoelectric energy-capturing device.
Used technical solution is the present invention to solve above-mentioned technical problem:
A kind of ultrafast electron-transport piezoelectric harvester, including quantum dot charge transmission piezoelectric energy-capturing plate and fixed device, amount
Son point charge transmission piezoelectric energy-capturing plate is connect with fixed device, and quantum dot charge transmission piezoelectric energy-capturing plate includes substrate, piezoelectricity member
Part layer and N-type quantum dot self charge transport layer, piezoelectric element layer and N-type quantum dot self charge transport layer are successively layed in substrate
On.
According to above-mentioned technical proposal, one end of quantum dot charge transmission piezoelectric energy-capturing plate is connect with fixed device, quantum dot
Charge transmits the other end suspension of piezoelectric energy-capturing plate, forms beam type and vibrates support construction.
According to above-mentioned technical proposal, N-type quantum dot charge transport layer is connected with external energy storage device.
According to above-mentioned technical proposal, piezoelectric element layer be piezo-electric crystal, piezoelectric ceramics, piezoelectric membrane, piezopolymer and
One of piezo-electricity composite material or any several combination.
According to above-mentioned technical proposal, piezoelectric element layer is PZT piezoelectric membrane.
According to above-mentioned technical proposal, it is necessary to meet following condition with piezoelectric element layer for N-type quantum dot charge transport layer:AndThen self charge is formed between N-type quantum dot self charge transport layer and piezoelectric element layer to pass
Defeated, wherein N-type quantum dot self charge transport layer is contacted with piezoelectric element layer causes the band structure of storeroom to deviate, and generates potential
Difference, VDIt is the contact potential difference of N-type quantum dot self charge transport layer and piezoelectric element layer, VD1To be passed in N-type quantum dot self charge
Potential difference at defeated layer, VD2For the potential difference at piezoelectric element layer, ND1For the carrier of N-type quantum dot self charge transport layer
Concentration, ND2For the carrier concentration of piezoelectric element layer, ε1For the dielectric constant of N-type quantum dot self charge transport layer, ε2For piezoelectricity
The dielectric constant of element layer.
According to above-mentioned technical proposal, N-type quantum dot self charge transport layer is N-type CdS QD hole transmission layer.
According to above-mentioned technical proposal, the material of substrate is Pt/TiO2/SiO2/Si。
The method for preparing above-described ultrafast electron-transport piezoelectric harvester, comprising the following steps:
1) PZT piezoelectric membrane is prepared on substrate using magnetron sputtering method；
2) quantum dot precursor solution is prepared using a pot method；
3) quantum dot precursor solution is spun on PZT piezoelectric membrane, forms N-type quantum dot self charge transport layer；
4) one end of substrate is connect with fixed device, forms beam type support construction.
According to above-mentioned technical proposal, in the step 2), the specific mistake of quantum dot precursor solution is prepared using a pot method
Journey the following steps are included:
A) a certain amount of cadmium oxide, thiocarbamide, octadecylene, glycerine and oleic acid are added in container；
B) lead to argon gas into container, and to the solution heating stirring in container, obtain CdS stoste；
C) CdS stoste is gone in separatory funnel, after octadecylene phase is mutually separated with glycerine, isolates upper oil phase；
D) obtained oil is mutually placed in a beaker, the n-hexane of 2 times of volumes, glass bar stirring is added, until solution mixing is equal
It is even；
E it) is continuously added acetone, is stirred, until flocculent deposit is no longer precipitated, solution is in suspension；
F) suspension is dispensed into centrifuge, suspension is centrifuged, after separation, retains precipitating, adds
Enter n-hexane dissolution；
G step C) is repeated)~F) repeatedly, until dispersing CdS quantum dot in n-hexane.
According to above-mentioned technical proposal, the step A) in, cadmium oxide, thiocarbamide, octadecylene, glycerine and oleic acid weigh
Amount is respectively 0.128g, 0.038g, 8mL, 10mL and 2mL, and the capacity of container is 50mL.
According to above-mentioned technical proposal, the step F) in, it is by the revolving speed that centrifuge is centrifugated suspension
2200~2800r/min, centrifuge separation time are 15~25min.
The invention has the following advantages:
By directly fitting for N-type quantum dot charge transport layer and piezoelectric element layer, realizes and generate piezoelectric element layer
AC energy, which directly rectifies, is converted into direct current energy and the supper-fast output of energy, no longer needs to install external charge transmission additional, greatly reduce
The loss of electric energy improves the energy acquisition transformation efficiency of piezoelectric energy-capturing device convenient for the integrated of device and miniaturization.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of ultrafast electron-transport piezoelectric harvester in the embodiment of the present invention；
The K partial schematic diagram of Fig. 1 when Fig. 2 is tension stress；
The K partial schematic diagram of Fig. 1 when Fig. 3 is compression chord；
Fig. 4 is electricity generating principle figure when quantum dot charge transmits piezoelectric energy-capturing panel vibration in the embodiment of the present invention；
Fig. 5 is positive and negative charge distribution map when quantum dot charge transmission piezoelectric energy-capturing plate does not vibrate in the embodiment of the present invention；
Fig. 6 is the level structure schematic diagram of N-type charge transmission piezoelectric harvester in the embodiment of the present invention；
In figure, 1- substrate, 2- piezoelectric element layer, 3-N type quantum dot self charge transport layer, the fixed device of 4-, 5- quantum dot
Charge transmits piezoelectric energy-capturing plate, 6- positive charge, 7- negative electrical charge, 8-Pt electrode.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawings and examples.
Shown in referring to Fig.1~Fig. 6, ultrafast electron-transport piezoelectric harvester in one embodiment provided by the invention, packet
Quantum dot charge transmission piezoelectric energy-capturing plate 5 and fixed device 4 are included, quantum dot charge transmits piezoelectric energy-capturing plate 5 and fixed device 4 connects
It connects, it includes substrate 1, piezoelectric element layer 2 and N-type quantum dot self charge transmitting layer 3, pressure that quantum dot charge, which transmits piezoelectric energy-capturing plate 5,
Electric device layer 2 and N-type quantum dot self charge transmitting layer 3 are successively layed on substrate 1；Quantum dot charge transmits piezoelectric energy-capturing plate 5
It is that supporting point vibrates to form amplitude to fix device 4, produces electricl energy piezoelectric element layer 2 by vibration, convert friendship for vibrational energy
Galvanic electricity energy, N-type quantum dot self charge transmitting layer 3 are bonded with piezoelectric element layer 2 and directly convert direct current energy for AC energy,
And it externally exports.
Further, one end of quantum dot charge transmission piezoelectric energy-capturing plate 5 is connect with fixed device 4, and quantum dot charge passes
The other end of defeated piezoelectric energy-capturing plate 5 suspends, and forms beam type and vibrates support construction.
Further, the connection type between quantum dot charge transmission piezoelectric energy-capturing plate 5 and fixed device 4 is outstanding in addition to being formed
Arm beam vibration support construction can also form freely-supported beam vibration support construction, circular vibration support construction, the vibration support of cymbal type
Structure and Rainbow type vibrate support construction.
Further, N-type quantum dot self charge transmitting layer 3 is connected with external energy storage device.
Further, external energy storage device is powered at single flow electricity consumption for the storage of direct current energy for storage capacitor
Device.
Further, piezoelectric element layer 2 is piezo-electric crystal, piezoelectric ceramics, piezoelectric membrane, piezopolymer and Piezoelectric anisotropy
One of material or any several combination.
Further, piezoelectric element layer 2 is PZT piezoelectric membrane.
Further, PZT is lead zirconate titanate, is a kind of piezoelectric material.
Further, the structure of piezoelectric element mainly has rectangle, triangle, square and round knot in piezoelectric element layer 2
Structure etc..
Further, the operating mode of piezoelectric element layer 2 includes that deformation is parallel to the d33 mode of direction of an electric field, deformation is hung down
The shearing deformation d15 mode directly generated when the d31 mode of direction of an electric field and polarization direction are perpendicular to direction of an electric field.
Further, it is necessary to meet following condition with piezoelectric element layer 2 for N-type quantum dot self charge transmitting layer 3:AndThen self charge is formed between N-type quantum dot self charge transmitting layer 3 and piezoelectric element layer 2 to pass
Defeated, wherein N-type quantum dot self charge transmitting layer 3 is contacted with piezoelectric element layer 2 causes the band structure of storeroom to deviate, and generates electricity
Potential difference, VDIt is the contact potential difference of N-type quantum dot self charge transmitting layer 3 and piezoelectric element layer 2, VD1It is certainly electric in N-type quantum dot
The potential difference of He Chuanshuceng3Chu, VD2For the potential difference at piezoelectric element layer 2, ND1For N-type quantum dot self charge transmitting layer 3
Carrier concentration, ND2For the carrier concentration of piezoelectric element layer 2, ε1For the dielectric constant of N-type quantum dot self charge transmitting layer 3,
ε2For the dielectric constant of piezoelectric element layer 2；Realize the electrochemical potential phase of N-type quantum dot self charge transmitting layer 3 and piezoelectric element layer 2
Matching and N-type quantum dot self charge transmitting layer 3 are matched with the band structure of piezoelectric element layer 2.
Further, N-type quantum dot self charge transmitting layer 3 is N-type CdS QD hole transmission layer, and QD is quantum dot English name
The abbreviation of title, as quantum dot.
Further, the material of substrate 1 is Pt/TiO2/SiO2/Si。
The method for preparing above-described ultrafast electron-transport piezoelectric harvester, comprising the following steps:
1) PZT piezoelectric membrane is prepared using magnetron sputtering method on substrate 1；
2) quantum dot precursor solution is prepared using a pot method；
3) quantum dot precursor solution is spun on PZT piezoelectric membrane, forms N-type quantum dot self charge transmitting layer 3；
4) one end of substrate 1 is connect with fixed device 4, forms beam type support construction.
Further, in the step 2), use a pot method prepare quantum dot precursor solution detailed process include with
Lower step:
A) a certain amount of cadmium oxide, thiocarbamide, octadecylene, glycerine and oleic acid are added in container；
B) lead to argon gas into container, and to the solution heating stirring in container, obtain CdS stoste；
C) CdS stoste is gone in separatory funnel, after octadecylene phase is mutually separated with glycerine, isolates upper oil phase；
D) obtained oil is mutually placed in a beaker, the n-hexane of 2 times of volumes, glass bar stirring is added, until solution mixing is equal
It is even；
E it) is continuously added acetone, is stirred, until flocculent deposit is no longer precipitated, solution is in suspension；
F) suspension is dispensed into centrifuge, suspension is centrifuged, after separation, retains precipitating, adds
Enter n-hexane dissolution；
G step C) is repeated)~F) repeatedly, until dispersing CdS quantum dot in n-hexane.
Further, the quantum dot precursor solution be include CdS quantum dot (i.e. N-type CdS quantum dot), will measure
Son point precursor solution is spun on PZT piezoelectric membrane, and after the solidification of quantum dot precursor solution, CdS quantum dot forms N-type quantum dot certainly
Charge transport layer 3.
Further, the step A) in, cadmium oxide, thiocarbamide, octadecylene, glycerine and oleic acid the amount of weighing be respectively
0.128g, 0.038g, 8mL, 10mL and 2mL, the capacity of container are 50mL.
Further, the step F) in, it is 2600r/min to the revolving speed that suspension is centrifugated by centrifuge,
The centrifuge separation time is 20min.
In one embodiment of the present of invention, the present embodiment is adopted for the purpose of the preparation of CdS QD-PZT piezoelectric energy-capturing material
CdS QD-PZT piezoelectric energy-capturing material is prepared with the present invention, detailed process is as follows:
1. magnetron sputtering method is used, in Pt/TiO2/SiO2PZT piezoelectric membrane is prepared on/Si substrate, instrument uses MSP-
620 type high vacuum magnetic control sputtering devices, sputtering parameter setting are as follows: 100 DEG C of underlayer temperature, sputtering power 100W, Ar flow 80sccm,
O2 flow 0, air pressure 0.6Pa, sputtering time 5000s, 700 DEG C of annealing 30min.
2. preparing N-type CdS QD electron transfer layer using a pot method: 0.128g cadmium oxide and 0.038g thiocarbamide are weighed respectively,
8mL octadecylene, 10mL glycerine and 2mL oleic acid are measured, above-mentioned reactant is mixed in the three-necked bottle of 50mL at room temperature, and
Heating and magnetic agitation program are opened in the case where being passed through nitrogen.Control reaction temperature, reaction time and presoma ratio etc.
Experiment parameter prepares various sizes of CdS QD；
The purification process of CdS quantum dot are as follows: CdS stoste is gone in separatory funnel, is mutually divided to octadecylene phase with glycerine
After opening, upper oil phase is isolated.Obtained oil is mutually placed in a beaker, the n-hexane of 2 times of volumes is added, glass bar stirs, until
Solution is uniformly mixed.Then, it is continuously added acetone, is stirred, until flocculent deposit is no longer precipitated, solution is in suspension.This is hanged
Supernatant liquid is dispensed into centrifuge, and setting revolving speed is 2600r/min, is centrifugated 20min with this condition；After separation, protect
Precipitating is stayed, n-hexane dissolution is added, repeats above-mentioned purification process 2-3 times, finally disperses CdS quantum dot in n-hexane.
The assembling of 3.CdS QD-PZT piezoelectric energy-capturing material: spin-coating method, the CdS QD quantum dot forerunner that will be prepared are used
Liquid solution is spin-coated on piezoelectric element (PZT).It is 4000rpm that quantum dot, which most preferably revolves Tu revolving speed,；Quantum dot annealing time is most preferably
3min；Optimal Quantum point precursor solution concentration is 10mg/mL.
4. the assembling of piezoelectric harvester: the CdS QD-PZT piezoelectric energy-capturing material prepared is assembled into cantilever beam structure,
Pt electrode, sputtering technology are prepared using magnetron sputtering are as follows: underlayer temperature is room temperature, sputtering power 100W, Ar flow 80sccm, O2
Flow 0, air pressure 0Pa, sputtering time 300s.External energy storage device is linked together with cantilever beam using conducting wire.
The band structure of CdS QDs-PZT piezoelectric energy-capturing material is constructed, as shown in Figure 3.E in figureg,PZT, Eg,CdSRespectively
Represent the forbidden bandwidth of two kinds of materials；ΦPZT, ΦCdSBetween the vacuum electron energy level and fermi level for respectively representing two kinds of materials
Energy difference, i.e. the work function of electronics；χPZT, χCdSThe respectively energy difference of vacuum electron energy level and conduction band bottom, i.e. electronics are affine
Energy.χ PZT=3.5eV and χ CdS=3eV is respectively adopted in the electron affinity of PZT and CdS QDs, it is assumed that the fermi level of PZT exists
The central location of band gap, corresponding PZT work function is about ΦPZTThe work function of=5.34eV, CdS QDs are ΦCdS=
3.58eV.The band gap of PZT and CdS QDs is respectively Eg,PZT=3.4eV and Eg,CdS=2.25eV.Assuming that the interface CdS QD-PZT
There is no defect, since the difference of PZT and CdS QDs work function can generate a build-up potential at interface under ideal conditions
VD, and this build-up potential is exactly the difference of PZT Yu CdS QDs work function, i.e. VD=ΦPZT-ΦCdS=1.76eV.
Computation model is assumed:
1. the depletion layer that piezoelectricity hetero-junctions has mutation；
2. Carrier Profile meets Boltzmann's Statistical distribution at depletion layer both ends；
3. the electrons and holes electric current for passing through depletion layer is constant, the generation of carrier and compound work in depletion layer are not considered
With；
4. majority carrier concentration is much smaller when the minority carrier concentration of injection is than balance, therefore can use small injection
Assuming that.
5. not considering the lattice mismatch situation of interface.
Carry out the carrier concentration of calculated equilibrium interface now, as shown in Figure 3.For at valence band (Ev).It takes electric at PZT
Gesture is zero (the hereinafter referred to as area p), then in barrier region a point x potential V(x)For positive value.Closer to CdS (the hereinafter referred to as area n)
The point at place, potential is higher, arrives barrier region boundary xnThe area the n potential at place is up to Δ EV, x in figuren, xpThe respectively area n and the area p
Barrier region boundary.For electronics, the energy of position in the area energy of position ratio n, the corresponding area pHigh q Δ EV。
Energy of position in barrier region at point χ is E(x)=-q Δ E(x), q Δ E higher than the area nV-qΔE(x)。
Since what is formed at this time is low barrier spike situation, the electron stream of hetero-junctions is mainly determined by flooding mechanism, is used
Diffusion model processing, in Fig. 3, the barrier height from n-type area conduction band bottom to p type island region conduction band bottom is qVD1+qVD2+ΔEc=qVD+
ΔEc, in available P-type semiconductor in minority carrier concentration n10 and n-type semiconductor majority carrier concentration n20 relationship
For
X=0 at interface is taken, when hetero-junctions plus forward voltage V, if the potential barrier boundary in the area P and the area n is respectively x=-x1
And x=x2, P-type semiconductor-x1The minority carrier concentration at place is n1(-x1), if ignoring the generation of barrier region carrier and answering
It closes, then n1(-x1) and n20Relationship be
Under steady state conditions, the continuity equation for the minority carrier movement injected in P-type semiconductor are as follows:
Its general solution is
In formula, Dn1And Ln1The respectively diffusion coefficient and diffusion length of p type island region minority carrier electronics.Application boundary item
When part x=- ∞, n1(- ∞)=n10, A=0 can be obtained.Work as x=-x1When, it solves
By the B in A=0 and above formula for people, then
To acquire the diffusion current density of carrier
Above formula is the electrons spread current density in n-type area injecting p-type area, is calculated below by the hole in p type island region implant n-type area
Diffusion current density.It is as can be seen from Fig. Δ E to the hole barrier height of the area n top of valence band from the area P top of valence bandv
Therefore in thermal balance in n-type semiconductor minority carrier hole concentration p20Increase with P-type semiconductor hole concentration
Are as follows:
When hetero-junctions plus forward voltage V, hole barrier is reduced to Δ Ev- V, in the area n x=x2The hole concentration at place increases
For
With it is preceding identical, solve diffusion equation and application boundary condition, can obtain
To acquire hole diffusion current density
In formula, Dp2And Lp2Respectively indicate the diffusion coefficient and diffusion length in n-type area hole.
When can obtain making alive V by formula, the overall current density tied by heterogeneous Pn are as follows:
For CdS QD-PZT heterojunction structure, voltage is generated in piezoelectric material side, and forward voltage generates, in heterojunction structure
Forward current is generated, when generating negative voltage, the presence of CdS quantum dot reduces the potential barrier at interface, charge when making negative pressure
It can also quickly transmit.
WhenWhen, then the heterojunction structure realizes the quick transmission of charge；
Wherein,ND1For N-type CdS QDs carrier concentration, ND2For PZT carrier concentration, ε1For N-type
CdS QDs dielectric constant, ε2For PZT dielectric constant, QD is the abbreviation of quantum dot English name, as quantum dot.
Therefore, CdS QD-PZT piezoelectric energy-capturing material has good electronic transmission performance.
In conclusion using the characteristic of semiconductor of quanta point material, by quantum dot with high performance piezoelectric element is compound obtains
Self charge transmission piezoelectric type prisoner's energy material completely newly is obtained, can greatly reduce and be disappeared by the electric energy that external charge transmission circuit generates
Consumption improves the energy acquisition transformation efficiency of piezoelectric energy-capturing device convenient for the integrated of device and miniaturization.
Above is only presently preferred embodiments of the present invention, and of course, the scope of rights of the present invention cannot be limited by this,
Therefore according to equivalence changes made by scope of the present invention patent, still belong to protection scope of the present invention.
Claims (10)
1. a kind of ultrafast electron-transport piezoelectric harvester, which is characterized in that including quantum dot charge transmission piezoelectric energy-capturing plate and admittedly
Determine device, quantum dot charge transmits piezoelectric energy-capturing plate and connect with fixed device, and it includes base that quantum dot charge, which transmits piezoelectric energy-capturing plate,
Plate, piezoelectric element layer and N-type quantum dot charge transport layer, piezoelectric element layer and N-type quantum dot charge transport layer are successively layed in
On substrate.
2. ultrafast electron-transport piezoelectric harvester according to claim 1, which is characterized in that quantum dot charge transmits piezoelectricity
One end of prisoner's energy plate is connect with fixed device, and quantum dot charge transmits the other end suspension of piezoelectric energy-capturing plate, forms beam type
Vibrate support construction.
3. ultrafast electron-transport piezoelectric harvester according to claim 1, which is characterized in that the transmission of N-type quantum dot charge
Layer is connected with external energy storage device.
4. ultrafast electron-transport piezoelectric harvester according to claim 1, which is characterized in that piezoelectric element layer is piezo crystals
One of body, piezoelectric ceramics, piezoelectric membrane, piezopolymer and piezo-electricity composite material or any several combination.
5. ultrafast electron-transport piezoelectric harvester according to claim 4, which is characterized in that piezoelectric element layer is PZT pressure
Conductive film.
6. ultrafast electron-transport piezoelectric harvester according to claim 1, which is characterized in that the transmission of N-type quantum dot charge
It is necessary to meet following condition with piezoelectric element layer for layer:AndThen N-type quantum dot self charge transmits
It forms ultrafast charge between layer and piezoelectric element layer to transmit, wherein N-type quantum dot self charge transport layer is contacted with piezoelectric element layer
It causes the band structure of storeroom to deviate, generates potential difference, VDIt is connecing for N-type quantum dot self charge transport layer and piezoelectric element layer
Electric shock potential difference, VD1For the potential difference at N-type quantum dot self charge transport layer, VD2For the potential difference at piezoelectric element layer, ND1
For the carrier concentration of N-type quantum dot self charge transport layer, ND2For the carrier concentration of piezoelectric element layer, ε1For N-type quantum dot
The dielectric constant of self charge transport layer, ε2For the dielectric constant of piezoelectric element layer.
7. ultrafast electron-transport piezoelectric harvester according to claim 1, which is characterized in that the transmission of N-type quantum dot charge
Layer is N-type CdS QD hole transmission layer.
8. ultrafast electron-transport piezoelectric harvester according to claim 1, which is characterized in that the material of substrate is Pt/
TiO2/SiO2/Si。
9. the method for preparing ultrafast electron-transport piezoelectric harvester described in claim 1, which is characterized in that including following step
It is rapid:
1) PZT piezoelectric membrane is prepared on substrate using magnetron sputtering method；
2) quantum dot precursor solution is prepared using a pot method；
3) quantum dot precursor solution is spun on PZT piezoelectric membrane, forms N-type quantum dot charge transport layer；
4) one end of substrate is connect with fixed device, forms beam type support construction.
10. preparation method according to claim 9, which is characterized in that in the step 2), using a pot method preparation amount
Son point precursor solution detailed process the following steps are included:
A) a certain amount of cadmium oxide, thiocarbamide, octadecylene, glycerine and oleic acid are added in container；
B) lead to argon gas into container, and to the solution heating stirring in container, obtain CdS stoste；
C) CdS stoste is gone in separatory funnel, after octadecylene phase is mutually separated with glycerine, isolates upper oil phase；
D) obtained oil is mutually placed in a beaker, the n-hexane of 2 times of volumes, glass bar stirring, until solution is uniformly mixed is added；
E it) is continuously added acetone, is stirred, until flocculent deposit is no longer precipitated, solution is in suspension；
F) suspension is dispensed into centrifuge, suspension is centrifuged, after separation, retains precipitating, is added just
Hexane dissolution；
G step C) is repeated)~F) repeatedly, until dispersing CdS quantum dot in n-hexane.
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| WO2009131636A2 (en) * | 2008-04-14 | 2009-10-29 | Rolls-Royce Corporation | Manufacture of field activated components by stereolithography |
| US20190284423A1 (en) * | 2016-11-10 | 2019-09-19 | Polyvalor, Limited Partnership | Piezoelectric composite, ink and ink cartridge for 3d printing, bifunctional material comprising the piezoelectric composite, manufacture and uses thereof |
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