CN103368451B - A kind of sliding friction nano generator - Google Patents

A kind of sliding friction nano generator Download PDF

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Publication number
CN103368451B
CN103368451B CN201310032271.0A CN201310032271A CN103368451B CN 103368451 B CN103368451 B CN 103368451B CN 201310032271 A CN201310032271 A CN 201310032271A CN 103368451 B CN103368451 B CN 103368451B
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China
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described
frictional layer
characterized
conducting element
generator
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CN201310032271.0A
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CN103368451A (en
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王中林
朱光
王思泓
林龙
陈俊
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北京纳米能源与系统研究所
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Abstract

The invention provides a kind of sliding friction nano generator, friction nanometer power generator comprises: the first frictional layer, described first frictional layer lower contact place the first conducting element, the second frictional layer, described second frictional layer overlying contact place the second conducting element, the upper surface of described first frictional layer and the lower surface of described second frictional layer staggered relatively; When externally applied forces makes the lower surface generation relative sliding of the upper surface of described first frictional layer and described second frictional layer rub and cause contact area to change, the signal of telecommunication can be exported by described first conducting element and the second conducting element to external circuit.When periodic tangential external force is applied to sliding friction nano generator of the present invention, pulse signal can be formed export between the first conducting element and the second conducting element.

Description

A kind of sliding friction nano generator

Technical field

The present invention relates to a kind of generator, is particularly the friction nanometer power generator of electric energy by applying the changes mechanical energy of external force.

Background technology

In today of microelectronics and material technology high speed development, the novel microelectronic device with several functions and Highgrade integration is constantly developed in a large number, and shows unprecedented application prospect in the every field of people's daily life.But, and the research of power-supply system that these microelectronic devices mate but relatively lags behind, in general, the power supply of these microelectronic devices is all directly or indirectly come from battery.Not only volume is comparatively large for battery, heavier mass, and the poisonous chemical confrontation environment contained and human body exist potential harm.Therefore, developing can be that the technology of electric energy is extremely important by the changes mechanical energy that motion, vibration etc. exist naturally.

But, above-mentioned mechanical energy can be converted into effectively the generator of electric energy all based on electromagnetic induction at present, driven by the hydraulic turbine, steam turbine, diesel engine or other dynamic power machine, by current, air-flow, the Conversion of Energy that fuel combustion or nuclear fission produce is that mechanical energy passes to generator, then is converted to electric energy by generator and is used.These generators all need the energy input of Relatively centralized, large intensity, and for produce in people's daily routines and kinetic energy that intensity that nature exists is less, substantially all it effectively cannot be converted into electric energy.Meanwhile, the volume of conventional electric generators is comparatively large, complex structure, can not use as the power supply component of microelectronic device at all.

Summary of the invention

In order to overcome the problems referred to above of the prior art, the invention provides a kind of sliding friction nano generator, can be electric energy by the changes mechanical energy of the tangential external force be applied in friction nanometer power generator.

For achieving the above object, the invention provides a kind of friction nanometer power generator, comprise

A kind of sliding friction nano generator, is characterized in that, comprising:

First frictional layer;

The first conducting element that described first frictional layer lower contact is placed;

Second frictional layer;

The second conducting element that described second frictional layer overlying contact is placed;

The upper surface of described first frictional layer and the lower surface of described second frictional layer staggered relatively;

When externally applied forces makes the lower surface generation relative sliding of the upper surface of described first frictional layer and described second frictional layer rub and cause friction area to change, the signal of telecommunication can be exported by described first conducting element and the second conducting element to external circuit;

Preferably, friction electrode sequence difference is had between the top surface of described first frictional layer and the lower surface material of described second frictional layer;

Preferably, described first frictional layer and/or the second frictional layer are insulating material or semi-conducting material;

Preferably, described insulating material is selected from polytetrafluoroethylene, dimethyl silicone polymer, polyimides, aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose, polyamide, melamino-formaldehyde, polyethylene glycol succinate, cellulose, cellulose ethanoate, polyethylene glycol adipate, polydiallyl phthalate, regenerated fiber sponge, polyurethane elastomer, styrene-acrylonitrile copolymer copolymer, styrene-butadiene-copolymer, staple fibre, poly-methyl, methacrylate, polyvinyl alcohol, polyester, polyisobutene, polyurethane flexible sponge, PETG, polyvinyl butyral resin, phenolic resins, neoprene, butadiene-propylene copolymer, natural rubber, polyacrylonitrile, poly-(vinylidene chloride-co-acrylonitrile), polyethylene third diphenol carbonate, polystyrene, polymethyl methacrylate, Merlon, polymeric liquid crystal copolymer, polychlorobutadiene, polyacrylonitrile, poly-biphenol carbonic ester, CPPG, polyvinylidene chloride, polyethylene, polypropylene or polyvinyl chloride,

Preferably, described semi-conducting material is selected from silicon, germanium, the IIIth and the Vth compounds of group, the IIth and the VIth compounds of group, oxide, the solid solution be made up of III-V compounds of group and II-VI compounds of group, amorphous glass semiconductor and organic semiconductor;

Preferably, the described IIIth and the Vth compounds of group is selected from GaAs and gallium phosphide; Described IIth and the VIth compounds of group is selected from cadmium sulfide and zinc sulphide; Described oxide is selected from the oxide of manganese, chromium, iron or copper; The described solid solution be made up of III-V compounds of group and II-VI compounds of group is selected from gallium aluminum arsenide and gallium arsenic phosphide;

Preferably, described frictional layer is non-conducting oxides, conductor oxidate or complex oxide, comprises silica, aluminium oxide, manganese oxide, chromium oxide, iron oxide, titanium oxide, cupric oxide, zinc oxide, BiO 2or Y 2o 3.

Preferably, the lower surface of described first frictional layer upper surface and/or the second frictional layer is distributed with the micro-structural of micron or secondary micron dimension;

Preferably, described micro-structural is selected from nano wire, nanotube, nano particle, nanometer channel, micron trenches, nanocone, micron cone, nanosphere and micron chondritic;

Preferably, the lower surface of described first frictional layer upper surface and/or the second frictional layer has interspersing of nano material or coating;

Preferably, the lower surface of described first frictional layer upper surface and/or the second frictional layer is through chemical modification, and making in polarity is that positive material surface is introduced the functional group that easily loses electronics and/or is that negative material surface introduces the functional group easily obtaining electronics in polarity;

Preferably, the described functional group easily losing electronics comprises amino, hydroxyl or alkoxyl;

Preferably, the described functional group easily obtaining electronics comprises acyl group, carboxyl, nitro or sulfonic group;

Preferably, the lower surface of described first frictional layer upper surface and/or the second frictional layer is through chemical modification, and making in polarity is that positive material surface is introduced positive charge and/or is that negative material surface introduces negative electrical charge in polarity;

Preferably, the mode that described chemical modification introduces charged groups by chemical bonding realizes;

Preferably, described first frictional layer or the second frictional layer are electric conducting material;

Preferably, the described electric conducting material forming described first frictional layer or the second frictional layer is selected from metal and conductive oxide;

Preferably, metal described in it is selected from gold, silver, platinum, aluminium, nickel, copper, titanium, chromium or selenium, and the alloy formed by above-mentioned metal;

Preferably, described first conducting element and/or the second conducting element are selected from metal and conductive oxide;

Preferably, described first conducting element and/or the second conducting element are selected from gold, silver, platinum, aluminium, nickel, copper, titanium, chromium or selenium, and the alloy formed by above-mentioned metal;

Preferably, described first frictional layer and/or the second frictional layer are film;

Preferably, described first conducting element and/or the second conducting element are film.

When periodic tangential external force is applied to sliding friction nano generator of the present invention, pulse signal can be formed export between the first conducting element and the second conducting element.Compared with prior art, sliding friction nano generator of the present invention has following advantages:

1, the new breakthrough in principle and application.Do not need gap between generator two substrates of the present invention, periodically Full connected is different on electricity generating principle with the device be entirely separated from two substrates, provides a brand-new mentality of designing to society.And gapless design eliminates the installation of elasticity distance keeper, also for encapsulation technology provides conveniently, more wide field can be applied in.

2, the efficiency utilization of energy.Generator of the present invention is without the need to energy input that is extensive, high strength, only need the mechanical energy inputted can drive relative sliding between the first frictional layer and the second frictional layer, therefore the mechanical energy of the various intensity produced in nature and people's daily life can effectively be collected, and be translated into electric energy, realize the efficiency utilization of energy.

3, structure simply, light and handy portable and highly compatible.Generator of the present invention is without the need to parts such as magnet, coil, rotors, structure is simple, volume is very little, easy to make, with low cost, can be arranged on the various device that the first frictional layer and the second frictional layer can be made to produce relative sliding, without the need to special operational environment, therefore there is very high compatibility.

4, of many uses.By carrying out physical modification or chemical modification to the upper surface of the first frictional layer in generator and the lower surface of the second frictional layer, introduce nanostructured pattern or be coated with nano material etc., can also improve further friction nanometer power generator under tangential External Force Acting two substrates contacts and relative sliding time the contact charge density that produces, thus improve the fan-out capability of generator.Therefore, generator of the present invention as mini power source, also can not only can be used for Electricity Generation simultaneously.

Accompanying drawing explanation

Shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.Reference numeral identical in whole accompanying drawing indicates identical part.Deliberately do not draw accompanying drawing by actual size equal proportion convergent-divergent, focus on purport of the present invention is shown.

Fig. 1 is a kind of typical structure schematic diagram of friction nanometer power generator of the present invention;

Fig. 2 is the generalized section of the electricity generating principle of friction nanometer power generator of the present invention;

Fig. 3 is the another kind of typical structure schematic diagram of friction nanometer power generator of the present invention;

Fig. 4 is the another kind of typical structure schematic diagram of friction nanometer power generator of the present invention;

Fig. 5 is for friction nanometer power generator of the present invention is providing during slip actuating force light 80 commercial LED bulb live-pictures with finger.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.

Secondly, the present invention is described in detail in conjunction with schematic diagram, and when describing the embodiment of the present invention in detail, for ease of illustrating, described schematic diagram is example, and it should not limit the scope of protection of the invention at this.

The invention provides a kind of is the simple friction nanometer power generator of structure of electric energy by the changes mechanical energy that motion, vibration etc. exist naturally, can provide the power supply of coupling for microelectronic device.Friction nanometer power generator of the present invention produces the phenomenon of surface charge transfer when make use of the material that there are differences in the polarity rubbed in electrode sequence, be electric energy by the changes mechanical energy of external force.

" friction electrode sequence " described in the present invention, refer to the sequence carried out according to the attraction degree of material to electric charge, bi-material is in the moment of phase mutual friction, and on rubbing surface, negative electrical charge is transferred to from the material surface of friction electrode sequence Semi-polarity calibration the material surface that friction electrode sequence Semi-polarity comparatively bears.Up to now, also do not have the mechanism of the explanation Charger transfer that a kind of unified theory can be complete, it is generally acknowledged, this Charger transfer is relevant with the surface work function of material, realizes Charger transfer by the transfer on the contact surface of electronics or ion.It should be noted that, friction electrode sequence is a kind of statistics based on experience, namely bi-material differs far away in the sequence, the probability that the positive negativity that after contact, institute produces electric charge and this sequence are consistent is larger, and the result of reality is subject to the impact of many factors, such as material surface roughness, ambient humidity and whether have Relative friction etc.

" contact electric charge " described in the present invention, refer to the material that there are differences two kinds of friction electrode sequence polarity in contact friction and after being separated its surface with electric charge, it is generally acknowledged, this electric charge is only distributed in the surface of material, and distribution depth capacity is only about 10 nanometers.It should be noted that, the symbol of contact electric charge is the symbol of net charge, namely may there is the aggregation zone of negative electrical charge in the some areas with the material surface just contacting electric charge, but the symbol of whole net surface charge is just.

Fig. 1 is a kind of typical structure of friction nanometer power generator of the present invention.Comprise: the first frictional layer 10, to contact with the first frictional layer 10 lower surface place the first conducting element 11, second frictional layer 20, contact the second conducting element 21 placed with the second frictional layer upper surface; The upper surface of the first frictional layer 10 contacts with the lower surface of the second frictional layer 20; Under the effect of external force, can there is relative sliding in the contact interface of described first frictional layer 10 and the second frictional layer 20, and contact area changes simultaneously, thus export the signal of telecommunication by the first conducting element 11 and the second conducting element 21 to external circuit.

For convenience of description, typical structure below with reference to Fig. 1 describes principle of the present invention, the selection principle of each parts and material ranges, but these contents are also not only confined to the embodiment shown in Fig. 1 obviously, but may be used for all technical schemes disclosed in this invention.

The operation principle of composition graphs 2 pairs of friction nanometer power generator of the present invention is described.When there being external force to make the lower surface generation relative sliding of the upper surface of the first frictional layer 10 and the second frictional layer 20 rub, because the top surface of the first frictional layer 10 and the lower surface material of the second frictional layer 20 there are differences rubbing in electrode sequence, cause surface charge transfer (see Fig. 2 (a)), remain in due to dislocation the electric field that in the first frictional layer 10 and the second frictional layer 20, surface charge is formed to shield, free electron in first conducting element 11 will flow on the second conducting element 21 by external circuit, thus produce an extrinsic current (see Fig. 2 (b)).When opposite direction applies external force, the relative sliding dislocation of the first frictional layer 10 or the second frictional layer 20 disappears, and two conducting elements restore to the original state, and the electronics in the second conducting element 21 flows back to the first conducting element 10, thus provides a rightabout extrinsic current.And so forth, alternating pulsing current is formed.

Although the phenomenon of triboelectrification already be familiar with by people, also there is common recognition this area to the material category that triboelectrification can occur, what often we knew is, and friction can play electrostatic, but for utilizing sliding friction to carry out generating electricity and be then that the present invention proposes first by its device.By the operation principle that the present invention provides above, those skilled in the art can clearly realize that the working method of sliding friction nano generator, thus can understand the selection principle of each component materials.Below provide the selectable range of each component materials being suitable for all technical schemes in the present invention, concrete selection can be done according to actual needs when practical application, thus reach the object of regulating generator output performance.

First frictional layer 10 and the second frictional layer 20 are made up of the material with differentiated friction electrical characteristics respectively, described differentiated friction electrical characteristics mean that the two is in different positions in friction electrode sequence, thus make the two can produce contact electric charge on surface in the process that friction occurs.Conventional high molecular polymer all has triboelectric characteristics, all can as the material preparing the present invention first frictional layer 10 and the second frictional layer 20, enumerate the macromolecule polymer material that some are conventional herein: polytetrafluoroethylene, dimethyl silicone polymer, polyimide film, aniline-formaldehyde resin film, polyformaldehyde film, ethyl cellulose film, polyamide film, melamino-formaldehyde film, polyethylene glycol succinate film, cellophane, cellulose acetate film, polyethylene glycol adipate film, polydiallyl phthalate film, regenerated fiber sponge films, elastic polyurethane body thin film, styrene-acrylonitrile copolymer copolymer film, styrene-butadiene-copolymer film, staple fibre film, poly-methyl film, methacrylic acid ester film, polyvinyl alcohol film, polyester film, polyisobutene film, polyurethane flexible sponge films, pet film, polyvinyl butyral film, phenolic resins film, neoprene film, butadiene-propylene copolymer film, natural rubber films, polyacrylonitrile film, poly-(vinylidene chloride-co-acrylonitrile) film or polyethylene third diphenol carbonate thin film, polystyrene, polymethyl methacrylate, Merlon or polymeric liquid crystal copolymer, polychlorobutadiene, polyacrylonitrile, poly-biphenol carbonic ester, CPPG, polyvinylidene chloride, polyethylene, polypropylene, polyvinyl chloride.Reason as space is limited; can not carry out exhaustive to all possible material; only list several concrete polymeric material herein from people's reference; but obviously these concrete materials can not become the restrictive factor of scope; because under the enlightenment of invention, those skilled in the art is easy to the material selecting other similar according to the triboelectric characteristics that these materials have.

Relative to insulator, semiconductor and metal all have the triboelectric characteristics easily losing electronics, in the list of friction electrode sequence, be often positioned at end place.Therefore, semiconductor and metal also can as the raw materials of preparation first frictional layer 10 or the second frictional layer 20.Conventional semiconductor comprises silicon, germanium; IIIth and the Vth compounds of group, such as GaAs, gallium phosphide etc.; IIth and the VIth compounds of group, such as cadmium sulfide, zinc sulphide etc.; And the solid solution to be made up of III-V compounds of group and II-VI compounds of group, such as gallium aluminum arsenide, gallium arsenic phosphide etc.Except above-mentioned Crystalline Semiconductors, also have amorphous glass semiconductor, organic semiconductor etc.Non-conductive oxide, conductor oxidate and complex oxide also have triboelectric characteristics, surface charge can be formed at friction process, therefore also frictional layer of the present invention can be used as, the such as oxide of manganese, chromium, iron, copper, also comprises silica, manganese oxide, chromium oxide, iron oxide, cupric oxide, zinc oxide, BiO 2and Y 2o 3; Conventional metal comprises gold, silver, platinum, aluminium, nickel, copper, titanium, chromium or selenium, and the alloy formed by above-mentioned metal.Certainly, other materials with conductive characteristic can also be used to serve as the baseplate material easily losing electronics, such as indium tin oxide ITO.

Found through experiments, when the first frictional layer 10 and the second frictional layer 20 material electronic capability difference larger (namely far away in the difference of the position in electrode sequence that rubs) time, the signal of telecommunication of generator output is stronger.So, according to actual needs, suitable material can be selected prepare the first frictional layer 10 and the second frictional layer 20, to obtain better output effect.

Physical modification can also be carried out to the first frictional layer 10 upper surface and/or the second frictional layer 20 lower surface, its surface distributed is made to have the micro structure array of micron or secondary micron dimension, to increase the contact area between the first frictional layer 10 and the second frictional layer 20, thus increase the contact quantity of electric charge.Concrete method of modifying comprises photoengraving, chemical etching and plasma etching etc.Also can by nano material intersperse or the mode of coating realizes this object.

Also can carry out chemical modification to the surface of the first frictional layer 10 contacted with each other and/or the second frictional layer 20, the transfer amount of electric charge at Contact can be improved further, thus improve the power output of contact charge density and generator.Chemical modification is divided into again the following two kinds type:

A kind of method is the first frictional layer 10 and the second frictional layer 20 material for contacting with each other, in the easier betatopic functional group of material surface introducing (namely strong to electron cloud) that polarity is positive, or be the functional group (strong electrophilic group) that negative material surface introduces the electronics that is more easy to get in polarity, the transfer amount of electric charge when mutually sliding can both be improved further, thus improve the power output of triboelectric charge density and generator.Comprise to electron cloud by force: amino, hydroxyl, alkoxyl etc.; Strong electrophilic group comprises: acyl group, carboxyl, nitro, sulfonic group etc.The introducing of functional group can the conventional method such as using plasma surface modification.The gaseous mixture of oxygen and nitrogen such as can be made under certain power to produce plasma, thus introduce amino on baseplate material surface.

Another method is that positive charge is introduced on positive baseplate material surface in polarity, and be that negative electrical charge is introduced on negative baseplate material surface in polarity.Specifically can be realized by the mode of chemical bonding.Such as, the method for hydrolysis-condensation (English is abbreviated as sol-gel) can be utilized to modify upper tetraethoxysilane (English is abbreviated as TEOS) at PDMS substrate surface, and make it electronegative.Also the bond of gold-sulphur can be utilized on metallic gold thin layer to modify the golden nanometer particle of upper surface containing softex kw (CTAB), because softex kw is cation, therefore whole substrate can be made to become positively charged.Those skilled in the art can according to the kind of the receiving and losing electrons character of baseplate material and surface chemistry key, and select suitable decorative material bonded thereto, to reach object of the present invention, therefore such distortion is all within protection scope of the present invention.

The present invention does not limit the first frictional layer 10 and the second frictional layer 20 must be hard material, also flexible material can be selected, because the hardness of material does not affect sliding friction effect therebetween, those skilled in the art can select according to actual conditions.The thickness of the first frictional layer 10 and the second frictional layer 20 has no significant effect enforcement of the present invention, the preferred frictional layer of the present invention is film, thickness is 100nm-5mm, preferably 1 μm of-2mm, more preferably 10 μm-800 μm, more preferably 20 μm-500 μm, these thickness are all applicable to technical schemes all in the present invention.

First conducting element 11 and the second conducting element 21 are as two electrodes of generator, as long as possess the characteristic that can conduct electricity, metal or conductive oxide can be selected from, conventional metal comprises gold, silver, platinum, aluminium, nickel, copper, titanium, chromium or selenium, and the alloy to be formed by above-mentioned metal, more preferably metallic film, such as aluminium film, golden film, copper film; Conventional conductive oxide comprises the semiconductor of indium tin oxide ITO and ion doping type.The substrate surface close contact that electrode layer is best and corresponding, to ensure the efficiency of transmission of electric charge, good mode electric conducting material is passed through the surface filming of mode at corresponding substrate of deposition; Concrete deposition process can be electron beam evaporation, plasma sputtering, magnetron sputtering or evaporation.

The mode that first conducting element 11 and the second conducting element 21 are connected with external circuit can be connected with external circuit by wire or metallic film.

Fig. 3 is the exemplary embodiments that the present invention's two substrates not exclusively contact.The major part of this embodiment is identical with the embodiment shown in Fig. 1, is only described the difference of the two herein.The upper surface of embodiment first frictional layer 10 shown in Fig. 3 is relatively little, and the lower surface of its upper surface and the second frictional layer 20 is all prepared into out-of-flatness surface, the change of contact area can be formed after the two contact in the process of relative sliding, thus realize the object outwards exporting the signal of telecommunication.This embodiment can be used for too small or the first frictional layer 10 and the second frictional layer 20 the relative position variable of upper surface because of the first frictional layer 10 smaller time, the size of external force or the moveable insufficient space of substrate are with the situation making generator export the suitable signal of telecommunication, effectively controlled the contact area of the first frictional layer 10 and the second frictional layer 20 by the setting on out-of-flatness surface, and produce the effective relative displacement needed for the signal of telecommunication.Those skilled in the art can predict the surface area of the second frictional layer 20 less time which also can be adopted completely to realize object of the present invention; and the setting of surface irregularity pattern also can be selected according to actual conditions, therefore these distortion are all within protection scope of the present invention.

Fig. 4 is the exemplary embodiments that substrate surface of the present invention is provided with micro-structural.The major part of this embodiment is identical with the embodiment shown in Fig. 1, is only described the difference of the two herein.Embodiment shown in Fig. 4 is respectively equipped with micron-sized linear structure 12 and 22 at the upper surface of the first frictional layer 10 and the lower surface of the second frictional layer 20.In the process that the first frictional layer 10 contacts with the second frictional layer 20, the micro-structural on its surface is interspersed or overlapping mutually, considerably increases the area of contact friction, thus effectively can improve the output performance of generator.For the concrete form of micro-structural, those skilled in the art can select conventional bar-shaped, wire or flower shape etc. according to preparation condition or actual needs.Although the effect arranging micro-structural on the surface of two substrates is best simultaneously, obviously only arranging micro-structural on the surface of a substrate also can obtain similar effect.

Embodiment 1

First conducting element employing thickness is the metal copper film layer of 100nm, first frictional layer employing thickness is Teflon (polytetrafluoroethylene) film of 25 microns, second frictional layer employing thickness is the metallic aluminium thin layer of 100nm, second conducting element is indium tin oxide ito thin film, and the macro-size of these retes is 5cm × 7cm.Metal copper film layer and ito thin film layer are wired on ammeter, Teflon film contacts placement with the relatively complete overlap of metallic aluminium film, then with the finger push-and-pull metal copper film repeatedly layer with insulating gloves, make the relative sliding that between Teflon film layer and metallic aluminium thin layer, generating period is reciprocal, ammeter there is short circuit current export, show that generator normally works.80 commercial LED bulb can be driven luminous with this generator, specifically see the photo of Fig. 5.

Because polytetrafluoroethylene has extremely negative polarity in friction electrode sequence, and the polarity calibration of metallic aluminium in electrode sequence, the combination of materials of the present embodiment is conducive to the output improving friction nanometer power generator.

Embodiment 2

Using thickness be 50 microns, the dimethyl silicone polymer (English is abbreviated as PDMS) of 3cm × 8cm is as the first frictional layer 10; using the silicon chip of identical macro-size as the second frictional layer; and silicon slice rotating is applied last layer photoresist, utilize the method for photoetching to form the square window array of the length of side in micron or secondary micron dimension on a photoresist; Silicon chip after photoetching being completed, through the chemical etching of overheated potassium hydroxide, forms pyramidal array of recesses at window place.And when silicon chip contacts concurrent raw relative sliding under external force with PDMS bi-material, because PDMS has good elasticity, it can enter and fill the sunk structure of silicon chip surface, thus increases the CONTACT WITH FRICTION area between silicon chip, can obtain better electric output effect.

Embodiment 3

The present embodiment only does modification to polytetrafluoroethylene film on the basis of embodiment 1, and other are all identical with embodiment 1, repeat no more herein.Inductively coupled plasma etching method is adopted to prepare nano-wire array in PolytetrafluoroethylFilm Film, first at the gold of ptfe surface by sputter deposition about 10 nanometer thickness, afterwards, polytetrafluoroethylene film is put into inductively coupled plasma etching machine, the one side depositing gold is etched, passes into O 2, Ar and CF 4gas, flow controls respectively at 10sccm, 15sccm and 30sccm, pressure controls at 15mTorr, working temperature controls at 55 DEG C, plasma is produced with the power of 400 watts, the power of 100 watts carrys out accelerate plasma, carries out the etching of about 5 minutes, and the length obtaining being basically perpendicular to insulating thin layer is about the high molecular weight ptfe nanometer stick array of 1.5 microns.

Sliding friction nano generator of the present invention can utilize translational kinetic energy to make generator produce electric energy, and for small-sized electric appliance provides power supply, and not needing the Power supplies such as battery, is a kind of generator easy to use.In addition, friction nanometer power generator preparation method of the present invention is easy, preparation cost is cheap, is a kind of friction nanometer power generator of having wide range of applications and generating set.

The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.

Claims (23)

1. a sliding friction nano generator, is characterized in that, comprising:
First frictional layer;
The first conducting element that described first frictional layer lower contact is placed;
Second frictional layer;
The second conducting element that described second frictional layer overlying contact is placed;
The upper surface of described first frictional layer and the lower surface of described second frictional layer staggered relatively;
When externally applied forces makes the lower surface generation relative sliding of the upper surface of described first frictional layer and described second frictional layer rub and cause friction area to change, the signal of telecommunication can be exported by described first conducting element and the second conducting element to external circuit.
2. generator as claimed in claim 1, is characterized in that, has friction electrode sequence difference between the top surface of described first frictional layer and the lower surface material of described second frictional layer.
3. generator as claimed in claim 1, is characterized in that the upper surface of described first frictional layer and/or the lower surface of the second frictional layer are insulating material or semi-conducting material.
4. generator as claimed in claim 3, is characterized in that described insulating material is selected from polytetrafluoroethylene, dimethyl silicone polymer, polyimides, aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose, polyamide, melamino-formaldehyde, polyethylene glycol succinate, cellulose ethanoate, polyethylene glycol adipate, polydiallyl phthalate, regenerated fiber sponge, polyurethane elastomer, styrene-acrylonitrile copolymer copolymer, styrene-butadiene-copolymer, staple fibre, poly-methyl, methacrylate, polyvinyl alcohol, polyisobutene, polyurethane flexible sponge, PETG, polyvinyl butyral resin, phenolic resins, neoprene, butadiene-propylene copolymer, natural rubber, polyacrylonitrile, poly-(vinylidene chloride-co-acrylonitrile), polyethylene third diphenol carbonate, polystyrene, polymethyl methacrylate, Merlon, polymeric liquid crystal copolymer, polychlorobutadiene, polyacrylonitrile, poly-biphenol carbonic ester, CPPG, polyvinylidene chloride, polyethylene, polypropylene or polyvinyl chloride.
5. generator as claimed in claim 3, is characterized in that described semi-conducting material is selected from silicon, germanium, the IIIth and the Vth compounds of group, the IIth and the VIth compounds of group, the solid solution be made up of III-V compounds of group and II-VI compounds of group, amorphous glass semiconductor, organic semiconductor.
6. generator as claimed in claim 5, is characterized in that the described IIIth and the Vth compounds of group is selected from GaAs and gallium phosphide; Described IIth and the VIth compounds of group is selected from cadmium sulfide and zinc sulphide; The described solid solution be made up of III-V compounds of group and II-VI compounds of group is selected from gallium aluminum arsenide and gallium arsenic phosphide.
7. generator as claimed in claim 1, is characterized in that described frictional layer is non-conducting oxides, conductor oxidate or complex oxide, comprises silica, aluminium oxide, manganese oxide, chromium oxide, iron oxide, titanium oxide, cupric oxide, zinc oxide, BiO 2or Y 2o 3.
8. the generator as described in any one of claim 1-7, is characterized in that, the lower surface of described first frictional layer upper surface and/or the second frictional layer is distributed with the micro-structural of micron or secondary micron dimension.
9. generator as claimed in claim 8, it is characterized in that, described micro-structural is selected from nano wire, nanotube, nano particle, nanometer channel, micron trenches, nanocone, micron cone, nanosphere and micron chondritic.
10. the generator as described in any one of claim 1-7, is characterized in that, the lower surface of described first frictional layer upper surface and/or the second frictional layer has interspersing of nano material or coating.
11. generators as described in any one of claim 1-7, it is characterized in that, the lower surface of described first frictional layer upper surface and/or the second frictional layer is through chemical modification, and making in polarity is that positive material surface is introduced the functional group that easily loses electronics and/or is that negative material surface introduces the functional group easily obtaining electronics in polarity.
12. generators as claimed in claim 11, it is characterized in that, the described functional group easily losing electronics comprises amino, hydroxyl or alkoxyl.
13. generators as claimed in claim 11, it is characterized in that, the described functional group easily obtaining electronics comprises acyl group, carboxyl, nitro or sulfonic group.
14. generators as described in any one of claim 1-7, it is characterized in that, the lower surface of described first frictional layer upper surface and/or the second frictional layer is through chemical modification, and making in polarity is that positive material surface is introduced positive charge and/or is that negative material surface introduces negative electrical charge in polarity.
15. generators as claimed in claim 14, is characterized in that, the mode that described chemical modification introduces charged groups by chemical bonding realizes.
16. generators as described in any one of claim 1-7, it is characterized in that, described first frictional layer or the second frictional layer are electric conducting material.
17. generators as claimed in claim 16, is characterized in that described electric conducting material is selected from metal and conductive oxide.
18. generators as claimed in claim 17, is characterized in that described metal is selected from gold, silver, platinum, aluminium, nickel, copper, titanium or chromium, and the alloy formed by above-mentioned metal.
19. generators as described in any one of claim 1-7, it is characterized in that, described first conducting element and/or the second conducting element are selected from metal and conductive oxide.
20. generators as claimed in claim 19, is characterized in that described metal is selected from gold, silver, platinum, aluminium, nickel, copper, titanium or chromium, and the alloy formed by above-mentioned metal.
21. generators as described in any one of claim 1-7, is characterized in that described first frictional layer and/or the second frictional layer are film.
22. generators as described in any one of claim 1-7, is characterized in that described first conducting element and/or the second conducting element are film.
23. generators as claimed in claim 3, is characterized in that described insulating material is polyester or cellulose.
CN201310032271.0A 2013-01-28 2013-01-28 A kind of sliding friction nano generator CN103368451B (en)

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CN103354429B (en) * 2013-03-12 2015-09-16 北京纳米能源与系统研究所 A kind of sliding friction nano generator and electricity-generating method
CN103780136B (en) * 2013-10-24 2016-08-17 北京纳米能源与系统研究所 A kind of revolving frictional generator exporting constant current
CN103523743B (en) * 2013-10-28 2016-06-29 北京大学科技开发部 A kind of miniature friction formula energy collecting device and preparation method thereof
CN104713570B (en) * 2013-12-16 2017-11-17 北京纳米能源与系统研究所 Utilize the method and apparatus of triboelectricity measurement object of which movement parameter
CN104980060B (en) * 2014-04-09 2017-05-10 北京纳米能源与系统研究所 Triboelectric nanometer generator capable of collecting liquid mechanical energy and power generating method thereof
KR20160142194A (en) * 2015-06-02 2016-12-12 삼성전자주식회사 Triboelectric generator

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CN102684546A (en) * 2012-05-15 2012-09-19 纳米新能源(唐山)有限责任公司 Friction generator
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