CN109461714A - A kind of alloying copper Cu (Ni) is without diffusion barrier layer interconnection structure and preparation method thereof - Google Patents
A kind of alloying copper Cu (Ni) is without diffusion barrier layer interconnection structure and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
Abstract
The invention discloses a kind of alloying copper Cu (Ni) without diffusion barrier layer interconnection structure and preparation method thereof, and the Cu (Ni) is that alloying copper Cu (Ni) film is prepared on Si matrix using magnetron sputtering embrane method without diffusion barrier layer.The preparation method includes the following steps: that pure Ni piece is attached in copper target by (a) with conducting resinl；(b) with being dried with nitrogen after substrate cleaning；(c) magnetron sputtering plating；(d) it makes annealing treatment, is taken out after cooling, obtain Cu (Ni) film.The film plating process that the present invention uses is magnetron sputtering deposition film method under vacuum, and the method is high-efficient, and the film being made has many advantages, such as that purity is high, even compact, adhesion are good；Sputtering process controllability of the invention is strong, can control the rate of sputtering by adjusting argon flow in sputtering process and power；The present invention adjusts the ingredient on the barrier layer Cu (Ni) by controlling the quantity of Ni target, systematically demonstrates the high thermostability in the barrier layer Cu (Ni), avoids experimental error.
Description
Technical field
The present invention relates to the barrier layer and preparation method thereof of silicon interconnection, specially a kind of alloying copper Cu (Ni) is hindered without diffusion
Barrier interconnection structure and preparation method thereof.
Background technique
Currently, very large scale integrated circuit (ULSI) towards deep-submicron chip manufacturing, encapsulate to miniaturization, high density
Change and multi-chip direction is developed, Al can not meet the needs in market as interconnection structure material therein.Cu interconnection material
Since its resistivity is lower, thermal conductivity is more preferable, anti-electron transfer capabilities are stronger and the more low advantage of power consumption, Al is replaced to interconnect
Structural material becomes the core material in integrated circuit interconnection material industry.But easily occur at high temperature between Cu and Si
Diffusion, to form the silicide of copper, this product resistivity is high and be easy to cause short circuit, reduces circuit and uses the longevity
Life, then needs to prepare diffusion barrier layer between Cu and Si.Due to interconnecting the continuous reduction of linear dimension, thickness is thin and has good
The preparation of the diffusion barrier layer of good barrier properties and electric property becomes more and more challenging, and in order to meet interconnection
The annealing process of material, the stability of barrier layer at high temperature require also higher and higher.
Summary of the invention
Goal of the invention: it is an object of the present invention to provide a kind of alloying copper Cu (Ni) of high thermal stability is mutual without diffusion barrier layer
Link structure, it is a further object of the present invention to provide a kind of high-efficient, process control alloying copper Cu (Ni) without diffusion barrier layer
The preparation method of interconnection structure.
Technical solution: a kind of alloying copper Cu (Ni) of the present invention is without diffusion barrier layer interconnection structure, alloying copper
The ingredient accounting of Cu (Ni) is Cu98.34Ni1.66/Si、Cu96.41Ni3.59/ Si or Cu90.84Ni9.16/ Si, by Cu98.34Ni1.66/Si
It is denoted as Cu (Ni)1, Cu96.41Ni3.59/ Si is denoted as Cu (Ni)2, Cu90.84Ni9.16/ Si is denoted as Cu (Ni)3。
Cu (Ni) is that alloying copper Cu (Ni) is prepared on Si matrix is thin using magnetron sputtering embrane method without diffusion barrier layer
Film.
Cu(Ni)1Ni atomic percent be 1.66at.%, the Cu (Ni)2The atomic percent of Ni be
3.59at.%, the Cu (Ni)3Ni atomic percent be 9.16at.%.
Alloying copper Cu (Ni) film with a thickness of nanoscale.
A kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure comprising the steps of:
(1) pure Ni piece is attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, to prevent conducting resinl to thin
The preparation of film generates pollution, and the pure Ni piece of sputtering target material is uniformly placed on the region from copper target vertical height for 15~25mm, because
The sputtering raste in the region is maximum, and the quantity of pure Ni piece is 1~3, preferably realizes the control to Ni content, ensure that its
Stability in practical application；
(2) monocrystalline silicon piece of (100) orientation is selected, ultrasound is used to silicon wafer using acetone, alcohol and deionized water respectively
Wave cleans 10~15 minutes, to remove the surface dirt and grease stain of the adhesion for influencing film and substrate, then places silicon wafer
It is impregnated 1~3 minute into the HF solution that mass fraction is 3~6wt%, after being cleaned with deionized water, then with being dried with nitrogen；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure is lower than 5Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 6.5 × 10-4~7.8 × 10-4Pa starts
It is passed through the argon gas that gas flow is 18~30sccm；
(5) operating air pressure blocks baffle to 0.5~0.8Pa, using 40~80W power to sample carry out pre-sputtering 5~
10min guarantees the purity and quality of film to remove the oxide layer and spot on its surface；
(6) baffle is opened, sputters 24~50min using the power of 90~120W；
(7) after the completion of plated film, vacuum annealing will take out after sample cooling, obtain Cu (Ni) film, after annealing, Ni
Atom is spread, and increases adhesive capacity, Cu the and Si substrate at Ni atom and both ends stronger can be combined together.
Target selection gist: Ni Elements Atom radius is relatively small, can perfectly dissolve in the defect and grain boundaries of Cu, can be with
The significantly more efficient diffusion for stopping copper.In addition, Ni also has lower resistivity and higher thermal stability, and not with Cu and Si
The advantages that reacting.Ni, without diffusion barrier material, is both able to maintain traditional Cu/Si diffusion barrier as a kind of novel preparation
The performance of layer, and due to being the alloy diffusion barrier being self-assembled into using copper as base, so thickness has also obtained very big drop
It is low.
The utility model has the advantages that compared to the prior art the present invention, has the characteristics that following conspicuousness: the film plating process that the present invention uses
It is magnetron sputtering deposition film method under vacuum, the method is high-efficient, and the film being made has purity is high, even compact, attachment
The advantages that property is good；Sputtering process controllability of the invention is strong, can by adjust sputtering process in argon flow and power come
Control the rate of sputtering；The present invention is more than and compares single Cu/Si and Cu (Ni)/Si interconnection structure, even more not
With Cu (Ni) alloy firm under Ni content as main comparison other, stopped by controlling the quantity of Ni target to adjust Cu (Ni)
The ingredient of layer, demonstrates the presence of the high thermostability in the barrier layer Cu (Ni), the unicity for avoiding experiment is brought more systematicly
Error possibility；Preparation process of the present invention is simple, and operating process is convenient, can be carried out simultaneously with the experiment of multiple groups sample, technique
In the case where parameter constant, the deposition velocity of film is stablized, and reproducible, film thickness can control in nanoscale；Benefit of the invention
With Ni atom in the defect of Cu crystal and the presence of interface, the diffusion barrier performance on barrier layer is largely improved, is made
Even if obtain interconnection structure still maintains good electric conductivity after high-temperature heat treatment, just there is the silicide of copper to go out until 650 DEG C
It is existing, material failure.
Detailed description of the invention
Fig. 1 is the EDS energy spectrum diagram of the embodiment of the present invention 6, wherein (a) Cu (Ni)1, (b) Cu (Ni)2, (c) Cu (Ni)3。
Fig. 2 is the resistivity analysis chart after the annealing of the embodiment of the present invention 6.
The deposited and the XRD diagram after 350-650 DEG C of annealing that Fig. 3 is the embodiment of the present invention 6, wherein (a) Cu (Ni)1, (b)
Cu(Ni)2, (c) Cu (Ni)3。
Fig. 4 is Cu made from the embodiment of the present invention 6 (Ni)1The SEM of interconnection structure schemes, wherein a, deposited；b,350℃；
c,450℃；d,550℃；e,650℃.
Fig. 5 is Cu made from the embodiment of the present invention 6 (Ni)2The SEM of interconnection structure schemes, wherein a, deposited；b,350℃；
c,450℃；d,550℃；e,650℃.
Fig. 6 is Cu made from the embodiment of the present invention 6 (Ni)3The SEM of interconnection structure schemes, wherein a, deposited；b,350℃；
c,450℃；d,550℃；e,650℃.
Specific embodiment
Used magnetic control sputtering device is the full-automatic magnetic control film coating machine of three target of JCP-500 type in following embodiment, both may be used
To sample heating can also water cooling, maximum sputtering power is 400W, and reachable 500 DEG C of maximum temperature, rate of heat addition adjustable extent exists
10~40 DEG C/min, it is suitable for preparing a variety of different materials films, membrane thickness unevenness is controlled in ± 5.0% model of Φ 100mm
In enclosing, maximum vacuum can reach 6.0 × 10-5The vacuum degree of Pa, superelevation effectively protect the quality of film.
Used purity of argon is 99.999% in following embodiment；The purity of pure Ni piece is 99.9%；The purity of Cu
It is 99.999%, diameter 60mm, thickness about 3mm；Substrate is single crystalline Si (100), and temperature remains room temperature；It can according to sputtering time
To control the thickness of film, the thickness of obtained alloying copper Cu (Ni) film is nanoscale in following embodiment, preferably
For 20~40nm.
Embodiment 1
(1) 1 pure Ni piece is attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, the pure Ni of sputtering target material
The region that it is 15mm from copper target vertical height that piece, which is placed on,；
(2) monocrystalline silicon piece that (100) are orientated is divided using ultrasonic cleaning 10 using acetone, alcohol and deionized water respectively
Silicon wafer is then placed into the HF solution that mass fraction is 3wt% and impregnates 1 minute, after being cleaned with deionized water, then uses nitrogen by clock
Air-blowing is dry；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure 0.5Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 6.5 × 10-4Pa starts to be passed through gas stream
Amount is the argon gas of 15sccm；
(5) operating air pressure blocks baffle, carries out pre-sputtering 5min to sample using the power of 40W to 0.5Pa；
(6) baffle is opened, sputters 24min using the power of 90W；
(7) after the completion of plated film, 350 DEG C of vacuum annealings will take out after sample cooling, obtain Cu (Ni)1Film.
Embodiment 2
(1) 3 pure Ni pieces are attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, the pure Ni of sputtering target material
The region that it is 25mm from copper target vertical height that piece, which is placed on,；
(2) monocrystalline silicon piece that (100) are orientated is divided using ultrasonic cleaning 15 using acetone, alcohol and deionized water respectively
Silicon wafer is then placed into the HF solution that mass fraction is 6wt% and impregnates 3 minutes, after being cleaned with deionized water, then uses nitrogen by clock
Air-blowing is dry；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure is lower than 4.9Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 7.8 × 10-4Pa starts to be passed through gas stream
Amount is the argon gas of 30sccm；
(5) operating air pressure blocks baffle, carries out pre-sputtering 10min to sample using the power of 80W to 0.8Pa；
(6) baffle is opened, sputters 50min using the power of 120W；
(7) after the completion of plated film, 650 DEG C of vacuum annealings will take out after sample cooling, obtain Cu (Ni)3Film.
Embodiment 3
(1) 2 pure Ni pieces are attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, the pure Ni of sputtering target material
The region that it is 20mm from copper target vertical height that piece, which is placed on,；
(2) monocrystalline silicon piece that (100) are orientated is divided using ultrasonic cleaning 13 using acetone, alcohol and deionized water respectively
Silicon wafer is then placed into the HF solution that mass fraction is 4.5wt% and impregnates 2 minutes, after being cleaned with deionized water, then uses by clock
It is dried with nitrogen；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure 3Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 7.2 × 10-4Pa starts to be passed through gas stream
Amount is the argon gas of 23sccm；
(5) operating air pressure blocks baffle, carries out pre-sputtering 8min to sample using the power of 60W to 0.6Pa；
(6) baffle is opened, sputters 37min using the power of 105W；
(7) after the completion of plated film, 500 DEG C of vacuum annealings will take out after sample cooling, obtain Cu (Ni)2Film.
Embodiment 4
(1) 1 pure Ni piece is attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, the pure Ni of sputtering target material
The region that it is 17mm from copper target vertical height that piece, which is placed on,；
(2) monocrystalline silicon piece that (100) are orientated is divided using ultrasonic cleaning 11 using acetone, alcohol and deionized water respectively
Silicon wafer is then placed into the HF solution that mass fraction is 4wt% and impregnates 1.5 minutes, after being cleaned with deionized water, then uses by clock
It is dried with nitrogen；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure 2Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 6.8 × 10-4Pa starts to be passed through gas stream
Amount is the argon gas of 17sccm；
(5) operating air pressure blocks baffle, carries out pre-sputtering 6min to sample using the power of 45W to 0.6Pa；
(6) baffle is opened, sputters 27min using the power of 95W；
(7) after the completion of plated film, 370 DEG C of vacuum annealings will take out after sample cooling, obtain Cu (Ni)1Film.
Embodiment 5
(1) 3 pure Ni pieces are attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, the pure Ni of sputtering target material
The region that it is 23mm from copper target vertical height that piece, which is placed on,；
(2) monocrystalline silicon piece that (100) are orientated is divided using ultrasonic cleaning 14 using acetone, alcohol and deionized water respectively
Silicon wafer is then placed into the HF solution that mass fraction is 5.5wt% and impregnates 2.5 minutes by clock, after being cleaned with deionized water, then
With being dried with nitrogen；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure 4Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 6.5 × 10-4~7.8 × 10-4Pa starts
It is passed through the argon gas that gas flow is 25sccm；
(5) operating air pressure blocks baffle, carries out pre-sputtering 9min to sample using the power of 75W to 0.7Pa；
(6) baffle is opened, sputters 47min using the power of 115W；
(7) after the completion of plated film, 630 DEG C of vacuum annealings will take out after sample cooling, obtain Cu (Ni)3Film.
Embodiment 6
(1) pure Ni piece is attached in copper target with conducting resinl, conducting resinl is completely covered by pure Ni piece, and the pure Ni piece of sputtering target material is put
It sets in the region for being 20mm from copper target vertical height；
(2) monocrystalline silicon piece that (100) are orientated is divided using ultrasonic cleaning 15 using acetone, alcohol and deionized water respectively
Silicon wafer is then placed into the HF solution that mass fraction is 5wt% and impregnates 2 minutes, after being cleaned with deionized water, then uses nitrogen by clock
Air-blowing is dry；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, is evacuated to chamber using mechanical pump
Air pressure 4Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 6.8 × 10-4Pa starts to be passed through gas stream
Amount is the argon gas of 20sccm；
(5) operating air pressure blocks baffle, carries out pre-sputtering 5min to sample using the power of 50W to 0.5Pa；
(6) baffle is opened, sputters 30min using the power of 100W；
(7) after the completion of plated film, the vacuum annealing at 350 DEG C, 450 DEG C, 550 DEG C, 650 DEG C respectively will take after sample cooling
Out, Cu (Ni) film is obtained.
1,2,3 Ni pieces are attached in copper target respectively, can be made respectively from growth without diffusion barrier layer Cu
(Ni)1、Cu(Ni)2、Cu(Ni)3Alloy firm.According still further to the method in embodiment 6, without vacuum annealing process, Ji Kefen
It Zhi get not three kinds of As-deposited films.
1 Cu of table (Ni)1、Cu(Ni)2、Cu(Ni)3The EDS energy spectrum analysis tables of data of alloy firm
To Cu (Ni)1、Cu(Ni)2、Cu(Ni)3Alloy firm carries out EDS energy spectrum analysis respectively, as a result such as 1 institute of Fig. 1 and table
Show, shows that Cu is successfully made98.34Ni1.66、Cu96.41Ni3.59And Cu90.84Ni9.16.To its resistivity, phase constitution structure, microcosmic shape
The research and analysis of looks is obtained as drawn a conclusion:
Such as Fig. 2, before 450 DEG C, as the temperature rises, the resistivity of three groups of samples is all in slow increase, 450 DEG C it
Afterwards, resistivity increased dramatically with the raising of temperature, wherein Cu (Ni)2/ Si sample resistivity increase amplitude is minimum, and compared to
Cu(Ni)1/ Si and Cu (Ni)3/ Si, Cu (Ni)2/ Si possesses minimum resistivity.
Such as Fig. 3, as Cu (Ni)1Film can not be observed bright after 350 DEG C and 450 DEG C of vacuum annealings in XRD spectrum
Aobvious Cu3Si or Cu4Si diffraction maximum, and micro Cu-Si compound can only be also observed on SEM shape appearance figure, it was demonstrated that Cu at this time
Do not occur obviously to spread between Si, barrier properties and thermal stability are good.When film is after 550 DEG C of vacuum annealings,
The diffraction maximum of Cu-Si compound is detected in XRD spectrum, surface topography becomes out-of-flatness, and resistivity sharply increases, and illustrates this
When film barrier properties start to fail, generate Cu-Si compound, thermal stability is begun to decline.When film passes through 650 DEG C
After vacuum annealing, Cu is able to observe that from XRD spectrum4The diffraction maximum of Si, the diffusion aggravation between surface C u and Si, film is
Through entirely ineffective.Therefore, Cu (Ni)1No diffusion barrier film has good thermal stability at 450 DEG C, has been able to maintain
The diffusion barrier of effect acts on.
It can be obtained by Fig. 4-6, Cu (Ni) under deposited1, Cu (Ni)2, Cu (Ni)3Alloy firm all has smooth table
Face remains preferable continuity.
Eventually by Cu (Ni)1/ Si, Cu (Ni)2/ Si and Cu (Ni)3/ Si interconnection material is compared analysis, when Ni's
The thermal stability of alloy firm and barrier properties are best when atom content is 3.59at.%.
Claims (10)
1. a kind of alloying copper Cu (Ni) is without diffusion barrier layer interconnection structure, it is characterised in that: the alloying copper Cu (Ni)
Ingredient accounting is Cu98.34Ni1.66/Si、Cu96.41Ni3.59/ Si or Cu90.84Ni9.16/ Si, by Cu98.34Ni1.66/ Si is denoted as Cu
(Ni)1, Cu96.41Ni3.59/ Si is denoted as Cu (Ni)2, Cu90.84Ni9.16/ Si is denoted as Cu (Ni)3。
2. a kind of alloying copper Cu (Ni) according to claim 1 is without diffusion barrier layer interconnection structure, it is characterised in that: institute
It is that alloying copper Cu (Ni) film is prepared on Si matrix using magnetron sputtering embrane method that Cu (Ni), which is stated, without diffusion barrier layer.
3. a kind of alloying copper Cu (Ni) according to claim 1 is without diffusion barrier layer interconnection structure, it is characterised in that: institute
State Cu (Ni)1Ni atomic percent be 1.66at.%, the Cu (Ni)2Ni atomic percent be 3.59at.%, institute
State Cu (Ni)3Ni atomic percent be 9.16at.%.
4. a kind of alloying copper Cu (Ni) according to claim 1 is without diffusion barrier layer interconnection structure, it is characterised in that: institute
State alloying copper Cu (Ni) film with a thickness of nanoscale.
5. a kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure, it is characterised in that include following step
It is rapid:
(1) pure Ni piece is attached in copper target with conducting resinl；
(2) silicon wafer is used ultrasonic cleaning 10~15 minutes using acetone, alcohol and deionized water respectively, then puts silicon wafer
It sets in the HF solution that mass fraction is 3~6wt% and impregnates 1~3 minute, after being cleaned with deionized water, then with being dried with nitrogen；
(3) silicon wafer substrate is placed on vacuum indoor top, closes vacuum chamber door, chamber is evacuated to air pressure using mechanical pump
Lower than 5Pa；
(4) it closes mechanical pump opening molecular pump and is evacuated to chamber pressure arrival 6.5 × 10-4~7.8 × 10-4Pa starts to be passed through
Argon gas；
(5) operating air pressure blocks baffle to 0.5~0.8Pa, using 40~80W power to sample carry out pre-sputtering 5~
10min；
(6) baffle is opened, sputters 24~50min using the power of 90~120W；
(7) after the completion of plated film, vacuum annealing will take out after sample cooling, obtain Cu (Ni) film.
6. a kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure according to claim 5,
Be characterized in that: conducting resinl is completely covered by pure Ni piece in the step (1).
7. a kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure according to claim 5,
It is characterized in that: the region that it is 15~25mm from copper target vertical height that the pure Ni piece of sputtering target material, which is uniformly placed on, in the step (1).
8. a kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure according to claim 5,
Be characterized in that: the quantity of pure Ni piece is 1~3 in the step (1).
9. a kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure according to claim 5,
Be characterized in that: the silicon wafer selected in the step (2) is the monocrystalline silicon piece of (100) orientation.
10. a kind of preparation method of the alloying copper Cu (Ni) without diffusion barrier layer interconnection structure according to claim 5,
Be characterized in that: the gas flow of argon gas is 18~30sccm in the step (4).
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| JPH08139090A (en) * | 1994-11-10 | 1996-05-31 | Nec Corp | Semiconductor integrated circuit device |
| CN101748373A (en) * | 2009-12-26 | 2010-06-23 | 大连理工大学 | Preparation method of Cu (C) film with high heat stability and low resistivity |
| CN102881633A (en) * | 2011-07-15 | 2013-01-16 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of copper interconnection structure |
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2018
- 2018-11-15 CN CN201811362802.1A patent/CN109461714A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08139090A (en) * | 1994-11-10 | 1996-05-31 | Nec Corp | Semiconductor integrated circuit device |
| CN101748373A (en) * | 2009-12-26 | 2010-06-23 | 大连理工大学 | Preparation method of Cu (C) film with high heat stability and low resistivity |
| CN102881633A (en) * | 2011-07-15 | 2013-01-16 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of copper interconnection structure |
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