CN106756845A - It is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat - Google Patents
It is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat Download PDFInfo
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- CN106756845A CN106756845A CN201611188591.5A CN201611188591A CN106756845A CN 106756845 A CN106756845 A CN 106756845A CN 201611188591 A CN201611188591 A CN 201611188591A CN 106756845 A CN106756845 A CN 106756845A
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- China
- Prior art keywords
- dlc film
- sliding members
- face coat
- members face
- nitrogen
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses it is a kind of can be used as the preparation method of the doping DLC film of sliding members face coat, it is characterised in that comprise the following steps：（1）The Si substrates strictly cleaned by acetone, alcohol, deionized water etc. are placed on sample pedestal.（2）With nitrogen as build-up of luminance gas, target is bombarded, reach the purpose of removal surface impurity and activation target.（3）Nitrogen also serves as reacting gas simultaneously --- doped source, the doping of DLC film is realized by reaction.Technological parameter is less by using nitrogen simultaneously as build-up of luminance and reacting gas, changing for the present invention, and can prepare according to actual needs can be used as the N of the low-friction coefficient of sliding members face coat doping DLC films.
Description
Technical field
Can be mainly used in drop as the preparation method of the doping DLC film of sliding members face coat the present invention relates to a kind of
The coefficient of friction of low component, strengthens the service life of component.
Background technology
The introducing of nitrogen in DLC film：One is the possibility for seeking artificial synthesized C3N4 ultra-hard compounds；Two is to make
It is the Effective Doping agent of N-shaped ta-C films.2000, B.Kleinsorge etc. was found through experiments that, when N is former in DLC film
When subnumber fraction is below 0.4%, the sp3 linkage contents and band gap of film are constant, but resistivity changes；When N content is in 0.4%-
When between 8%, sp3 contents are still 80%, but band gap has reduced；When N content is more than 10%, sp3 contents are reduced, sp2 content phases
Should increase.Occupy the related personnel such as Jian Hua research to show, on the one hand the introducing of nitrogen constrains the generation of c h bond, on the other hand generates
C-N keys be difficult to be thermally decomposed, improve the heat endurance of film.The research of Liu Guiang etc. shows that nitrogenous DLC film is attached
Put forth effort to significantly improve, and internal stress is smaller.
The content of the invention
It is an object of the invention to provide a kind of sliding members face coat preparation method of N doping DLC film, pass through
With nitrogen be build-up of luminance gas simultaneously also with nitrogen as reacting gas, during sputter coating, introduce variable element it is less, film matter
Amount is relatively easy to control, and can obtain the N doping DLC film of different dopings, is beneficial to the use requirement of different components.
The present invention is adopted the following technical scheme that
It is a kind of to be comprised the following steps as the preparation method of the N doping DLC film of sliding members face coat：
（1）It is backing material from Si；
（2）Cleaning Si backing materials, carry out strict ultrasonic wave to substrate and clean respectively with acetone, alcohol, deionized water, remove
The impurity and greasy dirt on surface, and electricity consumption blowing drying in case with；
（3）The Si substrates that will be cleaned up are placed on sample pedestal；
（4）Nitrogen bombards target, i.e. pre-sputtering target, cleaning and activation target；
（5）Si backing materials through over cleaning are put into sputtering chamber, 10 are evacuated in vacuum-5During Pa, sputter gas nitrogen is passed through
Gas, makes its build-up of luminance, carries out pre-sputtering, removes impurity, the dirt of target material surface, while nitrogen also serves as reacting gas --- doping
Source participate in the reaction of graphite target, finally prepare it is a kind of can be used as the N doping DLC film of sliding members face coat.Carry out
During plated film, the technological parameter of graphite target is：50 ~ 200W, sputtering chamber operating air pressure is 02 ~ 1.5Pa, sputtering time
It is 10-60min, it is-50-200W to bias, carries out magnetron sputtering plating, N doping DLC film is directly obtained after plated film.
Beneficial effects of the present invention are embodied in：
（1）Build-up of luminance gas and reacting gas all use nitrogen, and introducing variable element is less, and experiment is relatively easy to control；
（2）By the technological parameter for changing C targets, it is possible to prepare the DLC film of different N doping amounts；
（3）Preparation process is simple, parameter controllability is stronger, and one piece of target is the preparation of the DLC film for being capable of achieving different dopings.
Specific embodiment
With reference to the further detailed description done to the present invention during specific experiment：
Embodiment：Using high purity graphite as sputtering target material, with Si pieces as backing material, conventional method is first according to respectively with third
Ketone, alcohol, deionized water carry out ultrasonic wave cleaning to backing material, to remove surface grease and dirt, then with hot blast drying,
Then in putting into magnetron sputtering chamber.
When vacuum reaches 1.0*10 in sputtering chamber-5During Pa, sputtering and reacting gas nitrogen are passed through, make C target build-ups of luminance, in advance
Sputtering 10min, it is therefore an objective to clear up C target surface contaminants；
Then C target technological parameters are adjusted：Sputtering power 100w the, while biasing -100V on substrate, is maintained at operating air pressure
0.5Pa, sputtering time 30min, then directly obtain N doping DLC films.
Claims (3)
1. a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat, it is characterised in that including following step
Suddenly：
（1）Ultrasonic wave cleaning is carried out to substrate with acetone, alcohol, deionized water respectively, the impurity and greasy dirt on surface is removed, is used in combination
Hair dryer is dried up with standby；
（2）The substrate that will be cleaned up is placed on sample pedestal；
（3）In sputtering chamber, graphite target is bombarded 3-5 minutes with nitrogen, cleaned and activation target；
（4）Substrate through over cleaning is put into sputtering chamber, 10 are evacuated in vacuum-5During Pa, sputter gas nitrogen is passed through, makes it
Build-up of luminance, is carried out pre-sputtering 3-15 minutes, removes impurity, the dirt of target material surface；
（5）During carrying out plated film, the technological parameter of graphite target is：50 ~ 200W, sputtering chamber operating air pressure be 02 ~
1.5Pa, sputtering time is 10-60min, and it is-50-200W to bias, and carries out magnetron sputtering plating, and one kind is directly obtained after plated film
Can be used as the N doping DLC film of sliding members face coat.
2. it is according to claim 1 it is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat, its
It is characterised by any one in the selection Si of backing material used by step 1 pieces, glass, metal.
3. it is according to claim 1 it is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat, its
Nitrogen is characterised by both as sputtering build-up of luminance gas, and as reaction impurity gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611188591.5A CN106756845A (en) | 2016-12-21 | 2016-12-21 | It is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611188591.5A CN106756845A (en) | 2016-12-21 | 2016-12-21 | It is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106756845A true CN106756845A (en) | 2017-05-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611188591.5A Pending CN106756845A (en) | 2016-12-21 | 2016-12-21 | It is a kind of can be used as the preparation method of the N doping DLC film of sliding members face coat |
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| CN (1) | CN106756845A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107475668A (en) * | 2017-09-07 | 2017-12-15 | 蚌埠玻璃工业设计研究院 | A kind of preparation method of high resistivity CN films |
| CN107686972A (en) * | 2017-09-07 | 2018-02-13 | 蚌埠玻璃工业设计研究院 | A kind of preparation method of co-doped diamond film |
| CN108085642A (en) * | 2017-12-28 | 2018-05-29 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of method for preparing W and N co-doped diamond films |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104275904A (en) * | 2013-07-12 | 2015-01-14 | 深圳富泰宏精密工业有限公司 | Shell and manufacturing method thereof |
| CN105255543A (en) * | 2014-07-11 | 2016-01-20 | 丰田自动车株式会社 | Sliding machine |
-
2016
- 2016-12-21 CN CN201611188591.5A patent/CN106756845A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104275904A (en) * | 2013-07-12 | 2015-01-14 | 深圳富泰宏精密工业有限公司 | Shell and manufacturing method thereof |
| CN105255543A (en) * | 2014-07-11 | 2016-01-20 | 丰田自动车株式会社 | Sliding machine |
Non-Patent Citations (2)
| Title |
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| 刘金声: "《离子束沉积薄膜技术及应用》", 31 January 2003, 国防工业出版社 * |
| 梁治齐等: "《清洗技术》", 31 August 1998, 中国轻工业出版社 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107475668A (en) * | 2017-09-07 | 2017-12-15 | 蚌埠玻璃工业设计研究院 | A kind of preparation method of high resistivity CN films |
| CN107686972A (en) * | 2017-09-07 | 2018-02-13 | 蚌埠玻璃工业设计研究院 | A kind of preparation method of co-doped diamond film |
| CN108085642A (en) * | 2017-12-28 | 2018-05-29 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of method for preparing W and N co-doped diamond films |
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Application publication date: 20170531 |
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