Multi-node monitoring system synchronization device for local discharge of switch cabinet
Technical Field
The invention relates to the fields of development, technical development and application of related equipment such as power equipment state monitoring and power asset management, in particular to a synchronization device of a multi-node monitoring system for local discharge of a switch cabinet.
Background
The high-voltage switch cabinet is used as electric equipment integrating measurement, control and protection, is mounted in a power plant, a medium-voltage transformer substation and a high-voltage transformer substation in a large quantity, and plays an important role in safe operation of a power grid and distribution and measurement of electric energy. In view of this, monitoring and diagnosing the operation state of the high-voltage switch cabinet itself has been a subject of attention of scientific research institutions, monitoring equipment manufacturing enterprises, power production and power grid enterprises for many years, and various monitoring technologies are proposed in succession. Among them, the partial discharge detection technology of the switch cabinet based on the measurement of the ground electric wave (TEV) and the ultrasonic wave (AA) has been most widely applied and developed for many years. Product-wise, the product of the uk EA Technology with related measurement Technology has been widely used worldwide for the last 30 years.
Similar products are developed by Chinese equipment manufacturing enterprises in recent years on the basis of introducing foreign technologies and products in 2006, and are recognized and applied to a certain degree in China. Since 2015, related departments in China put forward a distributed node wireless monitoring technology and develop corresponding products. The method has the advantage of easy implementation on site, and obtains the initial acceptance of power generation and power grid enterprises. However, a small range of applications suggests: the technology has the problems of weak anti-interference capability, difficulty in timely positioning the switch cabinet surface with the hidden danger of partial discharge, difficulty in carrying out deep insulation diagnosis, risk assessment and the like, and further popularization and application of the technology are hindered.
Disclosure of Invention
The invention aims to provide a switch cabinet local discharge multi-node monitoring system synchronization device to overcome the defects of the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a synchronization device of a switch cabinet local discharge multi-node monitoring system comprises a main node unit and a sub-node unit, wherein the main node unit comprises a main node processor unit, a main node pulse generation unit, a main node digital communication unit and a main node display unit which are connected with the main node processor unit, the main node pulse generation unit and the main node digital communication unit are simultaneously connected with a main node mode switching switch unit, and the main node mode switching switch unit is connected with a main node antenna unit; the sub-node unit comprises a sub-node analog-to-digital conversion unit, a sub-node signal conditioning unit and a sub-node microprocessor unit, wherein the sub-node signal conditioning unit and the sub-node microprocessor unit are connected with the sub-node analog-to-digital conversion unit;
the main node processor unit is used for controlling the main node mode switch unit to switch the synchronous signal transmitting mode and controlling the main node pulse generating unit to act, and the main node digital communication unit is used for communication between the main node processor unit and the main node mode switch unit;
the main node pulse generating unit generates unit pulse signals;
the main node mode switch unit is used for signal receiving and sending switching, the main node antenna unit is used for unit pulse signal transmission and digital communication, and the main node processor unit realizes digital signal receiving and processing through the main node antenna unit;
the subnode antenna unit is used for realizing unit pulse signal receiving and digital communication, and the subnode signal conditioning unit is used for conditioning the unit pulse signals; the sub-node mode switch unit is used for switching and detecting a sub-node detection object and a conditioning circuit thereof to realize measurement of a partial discharge signal, and the sub-node microprocessor unit is used for transmitting the measured partial discharge signal to the main node unit through the sub-node digital communication unit and the sub-node antenna unit.
Furthermore, the main node antenna unit and the sub-node antenna unit have the same structure, and adopt a single telescopic antenna with the model FR150, the gain of 6dB and the standing-wave ratio of less than 1 dB.
Furthermore, the main node digital communication unit and the sub-node digital communication unit both comprise a modulation and demodulation circuit and a signal transmitting and receiving circuit, the modulation mode adopts a frequency modulation mode, the carrier frequency is 2GHz, and the modulation and demodulation circuit adopts a controllable multi-resonance oscillator circuit to realize frequency modulation; the signal transmitting and receiving circuit comprises a radio frequency power amplifier and a driving circuit thereof, wherein the radio frequency power amplifier adopts the HMC580 to realize signal power amplification of 40 dB.
Furthermore, the main node processor unit and the sub-node processor unit adopt an embedded microprocessor ARM.
Further, the sub-node detection object and the conditioning circuit thereof comprise a site wave sensor, an ultrasonic sensor, a filter circuit and a peak value retainer; the preamplifier of the site wave sensor adopts an ultra-low noise high-speed amplifier AD4899-1, the amplification factor of the preamplifier is 50 times, the bandwidth is 0-100MHz, and the common mode rejection ratio is 100 dB; the preamplification circuit of the ultrasonic sensor adopts an ultra-low distortion precision operational amplifier LT1126, the amplification factor is 50 times, the bandwidth is 0-1MHz, and the common mode rejection ratio is 100 dB; the filter circuit adopts an active Chebyshev band-pass filter, and the passband frequency is 20kHz-1MHz and 1MHz-50 MHz; the peak holder directly adopts an envelope/peak detector LTC5507, the peak holder is used for realizing frequency reduction sampling, and the holding time of the peak holder is 1 mu s.
Further, the master node mode switch unit comprises a high-frequency relay and a drive circuit; the high-frequency relay adopts a TIS2 single-pole double-set switch, the upper limit cut-off frequency is 3GHz, the action speed is 20ms, and the driving voltage is 15V; the pulse rise time of the driving circuit is 1 mu s, and the driving current is more than 1A; the high-frequency relay is respectively connected with the main node pulse generating unit, the main node digital communication unit and the main node antenna unit through a synchronous pulse signal cable, a digital communication cable and a driving signal cable.
Furthermore, the driving circuit comprises a junction field effect transistor D1 of which the grid is connected with a control signal, the source of the junction field effect transistor D1 is grounded, the drain of the junction field effect transistor D1 is connected with one end of a resistor R, the grid of an enhancement field effect transistor S1 and the grid of an enhancement field effect transistor S2, the source of the enhancement field effect transistor S1 and the drain of the enhancement field effect transistor S2 are simultaneously connected with one end of an inductor L, and the other end of the resistor R is connected with the drain of the enhancement field effect transistor S1, the cathode of a diode D1, the cathode of a diode D3 and one end of a resistor R2; the source of the enhancement mode FET S2, the anode of the diode D2, the anode of the diode D4, one end of the capacitor C and the source of the junction mode FET D2 are grounded, the cathode of the diode D4, the anode of the diode D3, the other end of the capacitor C and the grid of the junction mode FET D2 are connected with the other end of the inductor L, the anode of the diode D1 and the cathode of the diode D2 are connected with one end of the inductor L, and the drain of the junction mode FET D2 is connected with the other end of the resistor R2.
Further, the main node pulse generation unit comprises a high-voltage charging circuit, a high-voltage discharging circuit, a photoelectric coupling circuit, a power supply module and a power frequency phase detector;
the power supply module adopts a numerical control direct current voltage stabilizing source; the high-voltage charging circuit comprises a medium-voltage power supply module, a resistor R1, a capacitor C1 and a resistor R2, one end of the resistor R1 is connected with the output anode of the medium-voltage power supply module of the resistor R1, the other end of the resistor R1 is connected with one end of a capacitor C1 and one end of a resistor R2, and the other end of the capacitor C1 and the other end of the resistor R2 are connected with the output cathode of the medium-voltage power supply module;
the capacitor discharge loop comprises a resistor R3, a diode D1, an inductor L and a field effect transistor S3, one end of the resistor R3 is connected with the other end of the resistor R1, the other end of the resistor R3 is connected with the anode of the diode D1, the cathode of the diode D1 is connected with one end of the inductor L, the other end of the inductor L is connected with the source of the field effect transistor S3, the drain of the field effect transistor S3 is connected with the other end of the capacitor C1, and the two ends of the inductor L;
the optocoupler driving circuit comprises an optocoupler chip, a resistor R4 and a resistor R5, wherein the positive electrode and the negative electrode of the light-emitting element side of the optocoupler chip are connected with a power frequency phase detector, the collector electrode of the light-sensitive element side of the optocoupler chip is connected with a 15V power supply, the emitter electrode of the light-sensitive element side of the optocoupler chip is connected with one end of a resistor R5, the other end of the resistor R5 is connected with the grid electrode of the field effect tube S3 and one end of a resistor R4, and the other end of the resistor R4;
the power frequency phase detector comprises a positive zero-crossing comparator and a voltage divider, wherein the positive zero-crossing comparator is provided with an enabling port.
Furthermore, the sub-node analog-to-digital conversion unit comprises a synchronous pulse conditioning circuit, a TEV sensor and AA sensor conditioning circuit, a controllable A/D converter and a processor; the synchronous pulse conditioning circuit comprises a filter circuit and a monostable trigger, wherein the filter circuit is used for realizing 1MHz-50MHz band-pass filtering and filtering other frequency signal interference, the monostable trigger is used for realizing synchronous pulse shaping, the steady state retention time is 20ms, and when the unit pulse signal identification is effective, an A/D acquisition card is triggered to acquire the detection data of the sensor; the TEV sensor and AA sensor conditioning circuit comprises an amplifying and filtering circuit and a peak value retainer, the amplification factor of the preamplifier is at least 50 times, the amplifying and filtering circuit adopts an active band-pass filter, and the passband frequency is 20kHz-1MHz and 1MHz-50 MHz; the peak value holder is used for realizing frequency reduction sampling, and the holding time of the peak value holder is 1 mu s; the sampling rate of the A/D acquisition card is 20MS/s, the sampling digit is 16, and the acquired data is directly transmitted to the processor.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention discloses a synchronization device for a multi-node wireless monitoring system for switch cabinet partial discharge, which is characterized in that a main node unit is packaged in a main monitoring node, each sub-node unit is packaged in a sub-monitoring node, a main node processor unit enters a synchronous signal transmitting mode through a control mode change-over switch, then a pulse generating unit is controlled to act, a pulse transmits a wireless synchronous signal to each sub-monitoring node through an antenna, and then the pulse is switched to a digital signal receiving mode; after each sub-monitoring node receives the synchronous pulse signal sent by the main monitoring node, the sub-node signal conditioning unit quickly triggers the analog-to-digital conversion unit to measure the partial discharge signal, then the collected signals are sent to the main node processor unit through the sub-node digital communication unit, the synchronous monitoring of a plurality of sub-monitoring nodes arranged on a multi-surface switch cabinet is realized, the adoption of the synchronous device solves the problem that the partial discharge signal time sequence and the voltage phase information can not be accurately acquired in the technical field of the current switch cabinet partial discharge wireless monitoring, in an economic way, a solid technical foundation is directly laid for the positioning of partial discharge and the pattern recognition of the partial discharge based on the voltage phase information, the device has the advantages of easy expansion and easy maintenance, the method is particularly suitable for the development and application fields of distributed insulation monitoring equipment for high-voltage switch cabinet partial discharge monitoring and other power equipment.
Furthermore, the sub-node detection object and the conditioning circuit thereof are composed of a site wave (TEV) sensor and a conditioning circuit thereof, and an ultrasonic sensor and a conditioning circuit thereof, wherein the conditioning circuit is composed of a pre-amplification wave circuit and a peak value retainer, the pre-amplification filter circuit aims to ensure that a partial discharge signal can be effectively picked up, the peak value retainer is used for realizing frequency reduction sampling, the acquisition card for ensuring the sampling rate of 20MS/s can effectively acquire partial discharge, and the product cost is reduced.
Drawings
FIG. 1 is a schematic diagram of the system of the present invention.
Fig. 2 is a schematic diagram of the main node mode switch unit according to the present invention.
Fig. 3 is a schematic diagram of the main node pulse generation unit according to the present invention.
FIG. 4 is a schematic diagram of the sub-node ADC unit according to the present invention.
Fig. 5 is a flow chart of the present invention.
Fig. 6 is a schematic diagram of the field implementation of the present invention.
In the figure, 11, a main node antenna unit; 12. a master node mode switch unit; 13. a master node pulse generating unit; 14. a main node digital communication unit; 15. a main node processor unit; 16. a master node display unit; 17. a sub-node antenna unit; 18. a child node mode switching unit; 19. a child node signal conditioning unit; 110. a child node analog-to-digital conversion unit; 111. a child node digital communication unit; 112. a child node microprocessor unit; 113. and the child node detection object and the conditioning circuit thereof.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
as shown in fig. 1, a synchronization apparatus for a multi-node monitoring system for local discharge of a switch cabinet includes a master node unit and a sub-node unit, where the master node unit includes a master node processor unit 15, and a master node pulse generation unit 13, a master node digital communication unit 14, and a master node display unit 16 connected to the master node processor unit 15, the master node pulse generation unit 13 and the master node digital communication unit 14 are simultaneously connected to a master node mode switch unit 12, and the master node mode switch unit 12 is connected to a master node antenna unit 11; the sub-node unit comprises a sub-node analog-to-digital conversion unit 110, a sub-node signal conditioning unit 19 and a sub-node microprocessor unit 112, wherein the sub-node signal conditioning unit 19 and the sub-node microprocessor unit 112 are connected with the sub-node analog-to-digital conversion unit 110, the sub-node microprocessor unit 112 is connected with a sub-node digital communication unit 111, the sub-node digital communication unit 111 and the sub-node signal conditioning unit 19 are simultaneously connected with a sub-node mode switching switch unit 18, the sub-node mode switching switch unit 18 is connected with a sub-node antenna unit 17, and the sub-node analog-to-digital conversion unit;
the main node processor unit 15 is used for controlling the main node mode switch unit 12 to switch the synchronous signal transmission mode and controlling the main node pulse generating unit 13 to generate unit pulse signals, and the main node digital communication unit 14 is used for communication between the main node processor unit 15 and the main node mode switch unit 12;
unit action pulses of the main node pulse generating unit 13 are transmitted to the main node antenna unit 11 through the main node mode switching switch unit 12 to transmit unit pulse signals to each sub-monitoring node, and the main node processor unit 15 receives digital signals through the main node antenna unit 11;
the sub-node antenna unit 17 is configured to receive a unit pulse signal sent by the master node in real time, trigger the sub-node mode switch unit 18 by the sub-node signal conditioning unit 19 for the unit pulse signal, detect a sub-node detection object and the conditioning circuit 113 thereof through the sub-node mode switch unit 18, and implement measurement of a partial discharge signal, and the sub-node microprocessor unit 112 is configured to transmit the measured partial discharge signal to the master node unit through the sub-node digital communication unit 111 and the sub-node antenna unit 17.
The main node antenna unit 11 and the sub-node antenna unit 17 are identical in structure, a common single telescopic antenna is adopted, the type FR150 is the gain 6dB, the standing-wave ratio is less than 1dB, the main node antenna unit 11 comprises two triangular electrodes arranged in a manner of opposite vertex, each triangular electrode consists of a copper inverted triangular capacitor dipole, the main node antenna unit 11 is used for achieving the dual functions of unit pulse signal transmission and digital communication, and the sub-node antenna unit 17 is used for achieving the dual functions of unit pulse signal reception and digital communication;
the main node digital communication unit 14 and the sub-node digital communication unit 111 both comprise a modulation and demodulation circuit and a signal transmitting and receiving circuit, the modulation mode adopts a frequency modulation mode, the carrier frequency is 2GHz, and the modulation and demodulation circuit adopts a controllable multi-resonance oscillator circuit to realize frequency modulation; the signal transmitting and receiving circuit comprises a radio frequency power amplifier and a driving circuit thereof, wherein the radio frequency power amplifier adopts an HMC580 to realize signal power amplification of 40 dB;
the main node processor unit 15 and the sub-node microprocessor unit 112 adopt an embedded microprocessor ARM, and the main node display unit 16 adopts a touch liquid crystal screen for displaying information and controlling the main node processor unit 15;
the sub-node detection object and conditioning circuit 113 thereof comprises a site wave (TEV) sensor, an ultrasonic (AA) sensor, a filter circuit and a peak value holder; the preamplifier of the site wave (TEV) sensor adopts an ultra-low noise high-speed amplifier AD4899-1, the amplification factor of the preamplifier is 50 times, the bandwidth is 0-100MHz, the common mode rejection ratio is 100dB, the preamplifier circuit of the ultrasonic (AA) sensor adopts an ultra-low distortion precision operational amplifier LT1126, the amplification factor is 50 times, the bandwidth is 0-1MHz, and the common mode rejection ratio is 100 dB; the filter circuit adopts an active Chebyshev band-pass filter, and the bandpassing frequencies are 20kHz-1MHz (AA) and 1MHz-50MHz (TEV); the peak value holder directly adopts an envelope/peak value detector LTC5507, the peak value holder is used for realizing frequency reduction sampling (greatly reducing equipment cost), the holding time of the peak value holder is 1 mu s, and the peak value holder mainly aims at ensuring that an acquisition card with a sampling rate of 20MS/s can effectively acquire partial discharge;
as shown in fig. 2, the master node mode changeover switch unit 12 includes a high-frequency relay and a drive circuit; the high-frequency relay adopts a TIS2 single-pole double-set switch, the upper limit cut-off frequency is 3GHz, the action speed is 20ms, and the driving voltage is 15V; the pulse rise time of the driving circuit is 1 mu s, the driving current is more than 1A, and the effective action of the high-frequency relay can be effectively ensured; the high-frequency relay is respectively connected with the main node pulse generating unit 13, the main node digital communication unit 14 and the main node antenna unit 11 through a synchronous pulse signal cable, a digital communication cable and a driving signal cable; the synchronous pulse signal cable adopts a 1kV high-voltage coaxial cable, and the wave impedance is 50 ohms; the digital communication cable and the driving signal cable adopt common signal coaxial cables, and the wave impedance is 50 ohms;
the driving circuit comprises a junction field effect transistor D1 with a grid connected with a control signal, a source electrode of a junction field effect transistor D1 is grounded, a drain electrode of a junction field effect transistor D1 is connected with one end of a resistor R, a grid electrode of an enhanced field effect transistor S1 and a grid electrode of an enhanced field effect transistor S2, a source electrode of the enhanced field effect transistor S1 and a drain electrode of the enhanced field effect transistor S2 are simultaneously connected with one end of an inductor L, and the other end of the resistor R is connected with a drain electrode of the enhanced field effect transistor S1, a negative electrode of a diode D1, a negative electrode of a diode D3 and; the source of the enhancement mode field effect transistor S2, the anode of the diode D2, the anode of the diode D4, one end of the capacitor C and the source of the junction mode field effect transistor D2 are grounded, the cathode of the diode D4, the anode of the diode D3, the other end of the capacitor C and the grid of the junction mode field effect transistor D2 are connected with the other end of the inductor L, the anode of the diode D1 and the cathode of the diode D2 are connected with one end of the inductor L, and the drain of the junction mode field effect transistor D2 is connected with the other end of the;
the main node pulse generating unit 13 shown in fig. 3 includes a high-voltage charging circuit, a high-voltage discharging circuit, a photoelectric coupling circuit, a power supply module, and a power frequency phase detector; the power module adopts a numerical control direct current voltage-stabilizing source, the voltage is 0-200V and is linearly adjustable, and the maximum output current is 15A; the high-voltage charging circuit comprises a medium-voltage power supply module, a resistor R1, a capacitor C1 and a resistor R2, one end of the resistor R1 is connected with the output anode of the medium-voltage power supply module of the resistor R1, the other end of the resistor R1 is connected with one end of a capacitor C1 and one end of a resistor R2, and the other end of the capacitor C1 and the other end of the resistor R2 are connected with the output cathode of the medium-voltage power supply module; the R1 resistor is selected to be 1k omega, the function is to realize the quick charge of the capacitor, the capacitor C1 is selected to be a 10nF ceramic capacitor, the voltage level is 5kV, the main function is to store charges and generate a discharge pulse, and the resistor R2 is used to slowly discharge the charges of the capacitor C2 when the capacitor is not discharged or is not completely discharged;
the capacitance discharge loop comprises a resistor R3, a diode D1, an inductor L and a field effect tube S3, one end of the resistor R3 is connected with the other end of the resistor R1, the other end of the resistor R3 is connected with the anode of the diode D1, the cathode of the diode D1 is connected with one end of the inductor L, the other end of the inductor L is connected with the source of the field effect tube S3, the drain of the field effect tube S3 is connected with the other end of the capacitor C1, the two ends of the inductor L are connected with an output cable, the resistor R3 selects 2 omega, the diode D1 selects 1N4007, the N4007 and the N4007 play a role in damping oscillation, the inductor L selects 10nH to form a resonant circuit with the resonant frequency of 16MHz with the capacitor C1;
the optocoupler driving circuit comprises an optocoupler chip, a resistor R4 and a resistor R5, wherein the positive electrode and the negative electrode of the light-emitting element side of the optocoupler chip are connected with a power frequency phase detector, the collector electrode of the light-sensitive element side of the optocoupler chip is connected with a 15V power supply, the emitter electrode of the light-sensitive element side of the optocoupler chip is connected with one end of a resistor R5, the other end of the resistor R5 is connected with the grid electrode of the field effect tube S3 and one end of a resistor R4, and the other end of the resistor R4; the photoelectric coupling chip is used for realizing photoelectric isolation of the high-voltage pulse generating circuit and the control circuit, the resistor R4 is used for protecting the gate of the field-effect tube S3, and the resistor R5 is used for limiting the driving current;
the power frequency phase detector mainly comprises a forward zero-crossing comparator and a voltage divider, wherein a power frequency signal led down by PT is divided by the voltage divider and then is added to two ends of the forward zero-crossing comparator to ensure that a power frequency forward zero-crossing point triggers a synchronous pulse generation loop, the forward zero-crossing comparator is provided with an enabling port, and the synchronous pulse generation loop can normally work only when the main node processor unit 15 enables the forward zero-crossing comparator;
as shown in fig. 4, the sub-node analog-to-digital conversion unit 110 includes a synchronous pulse conditioning circuit, a TEV sensor and AA sensor conditioning circuit, a controllable a/D converter and a processor; the synchronous pulse conditioning circuit comprises a filter circuit and a monostable trigger, wherein the filter circuit mainly realizes the band-pass filtering of 1MHz-50MHz, filters out the interference of other frequency signals and ensures the effective receiving of a main frequency 16MHz synchronous pulse signal, the monostable trigger aims at realizing the shaping of synchronous pulses, the steady state holding time is 20ms, when the synchronous pulse identification is effective, an A/D acquisition card is triggered to acquire the detection data of the sensor, the TEV sensor and the AA sensor conditioning circuit mainly comprise an amplifying and filtering circuit and a peak value holder, the amplification factor of a preamplifier is at least 50 times, the filtering circuit adopts an active band-pass filter, the passband frequency is 20kHz-1MHz (AA), 1MHz-50MHz (TEV), the peak value holder is used for realizing frequency reduction sampling, the holding time of the peak value holder is 1 mu s, and the acquisition card which ensures the sampling rate of 20MS/s can effectively acquire partial discharge. The sampling rate of the A/D acquisition card is 20MS/s, the sampling digit is 16, and the acquired data is directly transmitted to the processor.
As shown in fig. 5, the working mode of the whole synchronization device is shown, the sub-nodes always keep a synchronization pulse receiving mode when not receiving a synchronization pulse, when the main node receives a synchronization detection command, the main node triggers the synchronization pulse generating circuit to transmit a synchronization pulse to each sub-node, when each sub-node receives the synchronization pulse, the synchronization pulse triggers the analog-to-digital conversion unit to acquire the detection data of the TEV sensor and the AA sensor through the pulse conditioning circuit and transmits the detection data to the sub-unit microprocessor, the sub-unit microprocessor marks the start time of the analog-to-digital conversion, the sub-unit transmits the detection data to the main node in a time sharing manner by using the data communication module, and finally the main node displays the local discharge peak value and the phase spectrogram (PRPD) detected by each sub-node sensor at the same time through the liquid crystal display screen, thereby realizing the synchronization detection of the local discharge of the multi-surface high, the switch cabinets generating partial discharge can be roughly determined through the distribution trend of partial discharge peaks of the switch cabinets on each side at the same moment, and in addition, the detected phase spectrogram (PRPD) can provide complete and reliable data for the identification of the partial discharge mode.
As shown in fig. 6, which is an embodiment of the present invention, a partial discharge detection sub-node unit is installed on the outer surface of a multi-surface high-voltage switch cabinet, a partial discharge location wave (TEV) sensor and an ultrasonic (AA) sensor are installed on the outer surface of each high-voltage switch cabinet, so as to effectively detect a partial discharge signal generated by the high-voltage switch cabinet, a main partial discharge detection node can be placed on a mobile detection platform or held by a worker, when the main node transmits a synchronization pulse and implements synchronization measurement of each sub-node, the sub-node uploads partial discharge data detected by the partial discharge location wave (TEV) sensor and the ultrasonic (AA) sensor to the main node, so as to effectively implement simultaneous detection of partial discharge signals of the multi-surface switch cabinet, and for the worker, by observing partial discharge amplitude data of the multi-surface switch cabinet at the same time, the switch cabinet generating partial discharge can be judged, the partial discharge positioning is further realized, and the pattern recognition of the partial discharge can be realized through a detected phase spectrogram (PRPD).
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the present invention in any way, and it will be apparent to those skilled in the art that the above description of the present invention can be applied to various modifications, equivalent variations or modifications without departing from the spirit and scope of the present invention.