CN109457233A - 一种金属有机化合物供料控制系统 - Google Patents
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
本发明涉及半导体制造技术领域，具体为一种金属有机化合物供料控制系统，包括金属有机化合物存储罐，其特征在于该金属有机化合物存储罐顶部同时与载气管道与输出管道连通，载气管道上依次向外设置进气手动阀、单向止回阀、一号三通气动阀和二号三通气动阀、电动压力调节器、载气纯化系统和载气颗粒过滤系统；二号三通管道同时还与真空管道连接；输出管道上依次向外设置出气手动阀、三号三通气动阀、气动阀以及反应腔室；三号三通气动阀与一号三通气动阀相互连通。该系统解决了载气携带颗粒杂质、水汽和氧气等导致的管道堵塞以及工艺产品质量问题。
Description
技术领域
本发明涉及半导体制造技术领域，尤其涉有机金属化学气相沉工艺控制系统。
背景技术
金属有机化合物是制备高亮有机发光二极管、半导体激光器、高效太阳能电池等，半导体行业中的重要原料，大多数金属有机化合物都是易燃易爆化学品，室温即可自燃，与水和氧等易发生剧烈反应。对加工工艺及控制要求极高。尤其是OLED制造领域，在加工过程中，要保证进入反应腔室的金属有机化合物的流量是否稳定，并且不能含有对产品质量有影响的外来杂质成分。
而如今大多数的金属有机化合物作为前驱体，导入反应腔室进行产品制造，其方法主要是通过载气进入金属有机化合物容器，然后携带出金属有机化合物进入反应腔室进行产品制造。现有的工艺基本只是通过气动阀和手动阀的组合来控制载气的流向，没有考虑到载气中含有的或管道产生的杂质以及含有非工艺气体等因素；而压力主要通过对金属有机化合容器进行恒温，只能保证出口混合气体的压力，但无法保证反应气体的流量的恒定。所以存在以下三个致命的问题：
1）大多数企业载气一般通过管道输送，长期使用会携带有管道中残留或载气自带的杂质进入前驱体存储罐，堵塞气路，杂质进入反应腔室会造成产品的质量缺陷；
2）载气的纯净度不高，特别是含有水汽和氧气超标，会导致与前驱体发生反应降低前驱体质量，从而造成产品质量缺陷，或者导致危险发生；
3）载气进入前驱体存储罐后，由于载气是自由扩散无法控制混合的均匀度，从而无法保证前驱体的流出含量恒定。随着载气的进入，由于各成分的分压不一致，前驱体的流出量出现不恒定甚至下降，导致产品成品率下降和质量等问题。
发明内容
为解决上述技术问题，本发明提供了一种金属有机化合物供料控制系统。
一种金属有机化合物供料控制系统，包括金属有机化合物存储罐，其特征在于该金属有机化合物存储罐顶部同时与载气管道与输出管道连通，其中：载气管道延伸至有机化合物存储罐底部上方，载气管道上依次向外设置进气手动阀、单向止回阀、一号三通气动阀和二号三通气动阀、电动压力调节器、载气纯化系统和载气颗粒过滤系统；二号三通管道同时还与真空管道连接，真空管道上设置有气动阀；输出管道上依次向外设置出气手动阀、三号三通气动阀、气动阀以及反应腔室；三号三通气动阀与一号三通气动阀相互连通；三号三通气动阀和气动阀间的输出管道上设有质量流量计。
具体的，所述的载气纯化系统由水汽检测仪、水汽去除装置、氧气检测仪、氧气去除装置以及气动阀组成：水汽检测仪和氧气检测仪串联在载气管道上，水汽检测仪和氧气检测仪间还设置有间接管道，间接管道上设置水汽去除装置；氧气检测仪和电动压力调节器间还设置有间接管道，间接管道上设置氧气去除装置；所述的水汽检测仪、氧气检测仪以及电动压力调节器间设置有气动阀，水汽去除装置和氧气去除装置的进气端和出气端均设置有气动阀。
当载气通过时，水汽检测仪就会检测出载气的的水汽含量否符合工艺要求，当载气的水汽含量符合工艺要求时，水汽检测仪和氧气检测仪间的载气管道上的气动阀开启，水汽去除装置的进气端和出气端上的气动阀关闭，载气直接输送至后端设备；当载气的水汽含量不符合工艺要求时，水汽检测仪和氧气检测仪间的载气管道上的气动阀关闭，水汽去除装置的进气端和出气端上的气动阀开启，载气进入水汽去除装置，经过水汽去除后输送至后端设备。同理，当载气通过时，氧气检测仪就会检测出载气的的氧气含量否符合工艺要求，当载气的氧气含量符合工艺要求时，氧气检测仪和电动压力调节器间的载气管道上的气动阀开启，氧气去除装置的进气端和出气端上的气动阀关闭；当载气的氧气含量不符合工艺要求时，氧气检测仪和电动压力调节器间的载气管道上的气动阀关闭，氧气去除装置的进气端和出气端上的气动阀开启，载气进入氧气去除装置，经过氧气去除后输送至后端设备。
具体的，所述的载气颗粒过滤系统由激光粒子计数仪、颗粒过滤器以及气动阀组成：激光粒子计数仪串联在载气管道上，激光粒子计数仪和水汽检测仪间还设置有间接管道，间接管道上设置颗粒过滤器；所述的激光粒子计数仪和水汽检测仪间设置有气动阀，颗粒过滤器的进气端和出气端均设置有气动阀。
当载气通过时，激光粒子计数仪就会检测出载气中的颗粒度是否符合工艺要求。当载气的颗粒含量符合工艺要求时，激光粒子计数仪和水汽检测仪间的载气管道上的气动阀开启，颗粒过滤器的进气端和出气端上的气动阀关闭，载气直接输送至后端设备；当载气的颗粒含量不符合工艺要求时，激光粒子计数仪和水汽检测仪间的载气管道上的气动阀关闭，颗粒过滤器的进气端和出气端上的气动阀开启，载气进入颗粒过滤器，经过颗粒去除后输送至后端设备。
电动压力调节器是用于根据质量流量计对金属有机化合物出口含量的反馈，通过调节阀门的开闭大小，实实调节载气供应压力，以保证存储罐出气中含有的工艺所需的金属有机化合物的含量足量；一号气动三通阀、二号气动三通阀、三号气动三通阀根据工艺的要求通过气动控制来调整气动阀的连通方向，以满足工艺要求的气体流向；单向止回阀防止了金属有机化合物回流，减少了泄露的危险；真空管道作用在于停止作业时打开真空管道上的气动阀，以及一号气动三通阀、二号气动三通阀、三号气动三通阀，关闭进气手动阀和出气手动阀，通过真空吸即可去除管道中残留的金属有机化合物。
其中，所述的金属有机化合物是三甲基铝、三乙基铝、三甲基铟、三甲基镓、三乙基镓、三甲基锑、三乙基锑、二叔丁基碲、二乙基碲、二茂镁等；所述的载气是氮气、氢气、氩气、氦气等，不与金属有机化合物发生反应也不与工艺产品发生反应的惰性气体。
本发明的一种金属有机化合物供料控制系统，解决了载气携带颗粒杂质、水汽和氧气等导致的管道堵塞以及工艺产品质量问题，同时通过质量流量计与电动压力调节器的联动，解决了随着载气进入时间的延迟导致金属有机化合物出口流量不恒定导致的工艺产品质量问题。该控制系统还能对非工艺时候在管道中残留的金属有机化合物进行有效的去除，以及防止金属有机化合物回流，减少泄漏的危险。
附图说明
图1为本发明的一种金属有机化合物供料控制系统结构示意图。
图中，金属有机化合物存储罐1、载气管道2、输出管道3、进气手动阀4、单向止回阀5、一号三通气动阀6、二号三通气动阀7、电动压力调节器8、载气纯化系统9、载气颗粒过滤系统10、真空管道11、出气手动阀12、三号三通气动阀13、反应腔室14、质量流量计15、水汽检测仪9-1、水汽去除装置9-2、氧气检测仪9-3、氧气去除装置9-4、激光粒子计数仪10-1、颗粒过滤器10-2。
具体实施方式
实施例1：参考附图进行说明，本发明的金属有机化合物供料控制系统，包括金属有机化合物存储罐1，其特征在于该金属有机化合物存储罐1顶部同时与载气管道2与输出管道3连通，其中：载气管道2延伸至有机化合物存储罐1底部上方，载气管道2依次向外设置进气手动阀4、单向止回阀5、一号三通气动阀6和二号三通气动阀7、电动压力调节器8、载气纯化系统9和载气颗粒过滤系统10；二号三通管道同时还与真空管道11连接，真空管道11上设置有气动阀；输出管道3上依次向外设置出气手动阀12、三号三通气动阀13、气动阀以及反应腔室14；三号三通气动阀13与一号三通气动阀6相互连通；三号三通气动阀13和气动阀间的输出管道3上设有质量流量计15。
所述的载气纯化系统9由水汽检测仪9-1、水汽去除装置9-2、氧气检测仪9-3、氧气去除装置9-4以及气动阀组成：水汽检测仪9-1和氧气检测仪9-3串联在载气管道2上，水汽检测仪9-1和氧气检测仪9-3间还设置有间接管道，间接管道上设置水汽去除装置9-2；氧气检测仪9-3和电动压力调节器8间还设置有间接管道，间接管道上设置氧气去除装置9-4；所述的水汽检测仪9-1、氧气检测仪9-3以及电动压力调节器8间设置有气动阀，水汽去除装置9-2和氧气去除装置9-4的进气端和出气端均设置有气动阀。
所述的载气颗粒过滤系统10由激光粒子计数仪10-1、颗粒过滤器10-2以及气动阀组成：激光粒子计数仪10-1串联在载气管道2上，激光粒子计数仪10-1和水汽检测仪9-1间还设置有间接管道，间接管道上设置颗粒过滤器10-2；所述的激光粒子计数仪10-1和水汽检测仪9-1间设置有气动阀，颗粒过滤器10-2的进气端和出气端均设置有气动阀。
Claims (4)
1.一种金属有机化合物供料控制系统，包括金属有机化合物存储罐(1)，其特征在于该金属有机化合物存储罐(1)顶部同时与载气管道(2)与输出管道(3)连通，其中：载气管道(2)延伸至有机化合物存储罐(1)底部上方，载气管道(2)依次向外设置进气手动阀(4)、单向止回阀(5)、一号三通气动阀(6)和二号三通气动阀(7)、电动压力调节器(8)、载气纯化系统(9)和载气颗粒过滤系统(10)；二号三通管道同时还与真空管道(11)连接，真空管道(11)上设置有气动阀；输出管道(3)上依次向外设置出气手动阀(12)、三号三通气动阀(13)、气动阀以及反应腔室(14)；三号三通气动阀(13)与一号三通气动阀(6)相互连通。
2.如权利要求1所述的一种金属有机化合物供料控制系统，其特征在于载气纯化系统(9)由水汽检测仪(9-1)、水汽去除装置(9-2)、氧气检测仪(9-3)、氧气去除装置(9-4)以及气动阀组成：水汽检测仪(9-1)和氧气检测仪(9-3)串联在载气管道(2)上，水汽检测仪(9-1)和氧气检测仪(9-3)间还设置有间接管道，间接管道上设置水汽去除装置(9-2)；氧气检测仪(9-3)和电动压力调节器(8)间还设置有间接管道，间接管道上设置氧气去除装置(9-4)；所述的水汽检测仪(9-1)、氧气检测仪(9-3)以及电动压力调节器(8)间设置有气动阀，水汽去除装置(9-2)和氧气去除装置(9-4)的进气端和出气端均设置有气动阀。
3.如权利要求1所述的一种金属有机化合物供料控制系统，其特征在于载气颗粒过滤系统(10)由激光粒子计数仪(10-1)、颗粒过滤器(10-2)以及气动阀组成：激光粒子计数仪(10-1)串联在载气管道(2)上，激光粒子计数仪(10-1)和水汽检测仪(9-1)间还设置有间接管道，间接管道上设置颗粒过滤器(10-2)；所述的激光粒子计数仪(10-1)和水汽检测仪(9-1)间设置有气动阀，颗粒过滤器(10-2)的进气端和出气端均设置有气动阀。
4.如权利要求1所述的一种金属有机化合物供料控制系统，其特征在于三号三通气动阀(13)和气动阀间的输出管道(3)上设有质量流量计(15)。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004273692A (ja) * | 2003-03-07 | 2004-09-30 | Ulvac Japan Ltd | 薄膜製造装置及び薄膜製造方法 |
| US20070086007A1 (en) * | 2005-10-13 | 2007-04-19 | Schweighardt Frank K | Systems and methods for detecting liquid particles in a gas system |
| CN103203135A (zh) * | 2013-01-31 | 2013-07-17 | 上海博恩世通光电股份有限公司 | Mocvd设备的尾气颗粒过滤系统及方法 |
| CN203878209U (zh) * | 2013-12-25 | 2014-10-15 | 苏州矩阵光电有限公司 | 一种用于mocvd设备的mo源供给系统管路 |
| CN209010596U (zh) * | 2018-11-08 | 2019-06-21 | 云南北方奥雷德光电科技股份有限公司 | 一种金属有机化合物供料控制系统 |
-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004273692A (ja) * | 2003-03-07 | 2004-09-30 | Ulvac Japan Ltd | 薄膜製造装置及び薄膜製造方法 |
| US20070086007A1 (en) * | 2005-10-13 | 2007-04-19 | Schweighardt Frank K | Systems and methods for detecting liquid particles in a gas system |
| CN103203135A (zh) * | 2013-01-31 | 2013-07-17 | 上海博恩世通光电股份有限公司 | Mocvd设备的尾气颗粒过滤系统及方法 |
| CN203878209U (zh) * | 2013-12-25 | 2014-10-15 | 苏州矩阵光电有限公司 | 一种用于mocvd设备的mo源供给系统管路 |
| CN209010596U (zh) * | 2018-11-08 | 2019-06-21 | 云南北方奥雷德光电科技股份有限公司 | 一种金属有机化合物供料控制系统 |
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