CN109449547A - Restructural balun filter based on half-wave resonator - Google Patents
Restructural balun filter based on half-wave resonator Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
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Abstract
The invention discloses a kind of restructural balun filter based on half-wave resonator, including the first electric impedance resonator, second electric impedance resonator, third electric impedance resonator, varactor D1, varactor D2, varactor D3, varactor D4, varactor D5, varactor D6, varactor D7, varactor D8, varactor D9, varactor D10, varactor D11, varactor D12, varactor D13, varactor D14, varactor D15, varactor D16, varactor D17, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, resistance R10, resistance R1 1, resistance R12, resistance R13, patch capacitor C1, patch capacitor C2 and patch capacitor C3.Through the above scheme, the present invention can form the output of balun signal and reach the adjusting realized to centre frequency, bandwidth.
Description
Technical field
The present invention relates to field of wireless communications systems, are based especially on the restructural balun filter of half-wave resonator.
Background technique
Balun filter, is a kind of independent microwave passive component, it functionally realizes filter in radio circuit
With effective combination of balun, that is to say, that its frequency selective characteristic for having had both filter, but also with the non-equilibrium defeated of balun
Enter the function that signal is converted into balanced signal.Meanwhile balun filter has many advantages, such as low cost, high integration, miniaturization, quilt
It is widely used in the feeding network of checking the mark of balanced type frequency mixer, balanced type push-pull amplifier and antenna.Nowadays, with the modern times
The fast development of wireless communication system, frequency spectrum resource growing tension, more and more environment require the electronic equipment used in it
Has tunable, multi-functional feature, to improve the utilization rate of frequency spectrum resource.Currently, existing balun filter is adjustable
Range is lower, and is not directed to centre frequency and the controllable balun filter of relative bandwidth on the market.
Such as application No. is " 201410210133.1 ", it is entitled " bandwidth and working frequency it is individually controllable multilayer bimodulus it is double
The Chinese patent of passband balun filter " comprising the first microwave dielectric substrate, the second microwave dielectric substrate, the first microwave are situated between
The one side of matter substrate towards the second microwave dielectric substrate is equipped with as the first metal layer publicly, and the first metal layer is equipped with two
Item is orthogonal and unequal first gap of length, the one side far from the second microwave dielectric substrate of the first microwave dielectric substrate are equipped with
First patch resonator, the first patch resonator are provided with that two orthogonal and unequal second gap of length, the first patch are humorous
The device that shakes is equipped with an input terminal, and the one side far from the first microwave dielectric substrate of the second microwave dielectric substrate is equipped with the second patch resonant
Device, the second patch resonator be equipped with that two orthogonal and length third gap not etc. and the second patch resonator with it is defeated
Enter the both ends rectified and handed over to set there are two output end.The patent can be controlled respectively by the length in two the first gaps of control respectively
The bandwidth for making corresponding passband can be controlled separately corresponding passband by the length in two the second gaps of control and third gap
Centre frequency, realize two pass band widths of independent control and centre frequency using novel topological structure.But the patent
There is also following shortcomings: first, load varactor is more, increases the insertion loss of circuit and using difficulty.The
Two, centre frequency adjustable range is about 26%, still there is further room for promotion.
Summary of the invention
The purpose of the present invention is to provide a kind of restructural balun filter based on half-wave resonator mainly solves existing
There is the problems such as adjustable extent present in technology is lower, centre frequency and relative bandwidth are uncontrollable.
To achieve the goals above, The technical solution adopted by the invention is as follows:
Restructural balun filter based on half-wave resonator,
Including being covered on medium substrate and the first electric impedance resonator of C-shaped structure, the second electric impedance resonator and
Three electric impedance resonators, the varactor D4 that anode is connect with the bottom of the first electric impedance resonator, one end and varactor D4
Cathode connection patch capacitor C2, third port Port3 connect with the other end of patch capacitor C2, one end and two pole of transfiguration
The resistance R3 of the cathode connection of pipe D4, the varactor D1 that anode is connect with the bottom of the second electric impedance resonator, one end and change
Hold the patch capacitor C1 of the cathode connection of diode D1, the first port Port1 connecting with the other end of patch capacitor C1, one end
The resistance R1 being connect with the cathode of varactor D1, the varactor that anode is connect with the bottom of third electric impedance resonator
D15, the patch capacitor C3 that one end is connect with the cathode of varactor D15, second connect with the other end of patch capacitor C3
Port Port2, the resistance R13 that one end is connect with the cathode of varactor D15, and anode opposite using cathode and the first resistance
The varactor D7 and varactor D8 that the opening of the c-type structure of antiresonance device connects one to one, one end respectively with change
Hold the resistance R5 that diode D7 is connected with the cathode of varactor D8, and anode opposite using cathode and the second impedance resonance
The varactor D9 and varactor D10 that the opening of the c-type structure of device connects one to one, one end respectively with two pole of transfiguration
The resistance R6 that pipe D9 is connected with the cathode of varactor D10, opposite using cathode and anode and third electric impedance resonator C
The varactor D13 and varactor D14 that the opening of type structure connects one to one, one end respectively with varactor
The resistance R12 that D13 is connected with the cathode of varactor D14, opposite using cathode and anode and the first electric impedance resonator side
Side edge top the varactor D11 and varactor that connect one to one of edge upper part, the second electric impedance resonator
D12, the resistance R7 that one end is connect with the cathode of varactor D11 and varactor D12 respectively, it is opposite using cathode and
The transfiguration that connects one to one of side edge lower part of the side edge lower part of anode and the first electric impedance resonator, the second electric impedance resonator
Diode D5 and varactor D6, the resistance that one end is connect with the cathode of varactor D5 and varactor D6 respectively
R4, using cathode relatively and at the top of the side edge of anode and the second electric impedance resonator, at the top of the side edge of third electric impedance resonator
The varactor D16 and varactor D17 to connect one to one, one end respectively with two pole varactor D16 and transfiguration
The resistance R10 of the cathode connection of pipe D17, and anode opposite using cathode and the side edge bottom of the second electric impedance resonator, third
Varactor D2 and varactor D3 that the side edge bottom of electric impedance resonator connects one to one and one end respectively with
The resistance R2 that varactor D2 is connected with the cathode of varactor D3；First electric impedance resonator, the second impedance resonance
Device and third electric impedance resonator are the step electric impedance resonator of half wavelength.
First electric impedance resonator and the second electric impedance resonator relative position are laid, and the second electric impedance resonator and third hinder
The opposite position of antiresonance device is laid, and the first electric impedance resonator, the second electric impedance resonator and third electric impedance resonator top and
Bottom plate keeps flushing；The spacing of first electric impedance resonator and the second electric impedance resonator is 1.5mm, and second impedance is humorous
The spacing of vibration device and third electric impedance resonator is 0.8mm；The opening spacing l of the c-type structure5For 1.8mm.
First electric impedance resonator, the second electric impedance resonator are identical with the structure of third electric impedance resonator, include one
Body formed the first low-impedance strips, the second low-impedance strips, third low-impedance strips, the 4th low-impedance strips and the 5th low-impedance strips；Institute
It states the second low-impedance strips and third low-impedance strips and the both ends of the first low-impedance strips connects one to one；4th low-impedance strips
It is connect with the second low-impedance strips, and the 5th low-impedance strips are connect with third low-impedance strips.
The resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R10, resistance R12
It is connect with reverse bias power supply with the other end of resistance R13.
Further, the restructural balun filter further includes the 4th Low ESR of one end Yu the first electric impedance resonator
The top of band connects and the resistance R8 of other end ground connection, connects at the top of one end and the 4th low-impedance strips of the second electric impedance resonator
Connect and the other end ground connection resistance R9 and one end connect with the top of the 4th low-impedance strips of third electric impedance resonator and separately
The resistance R11 of one end ground connection.
Preferably, the medium substrate with a thickness of 25mil, and relative dielectric constant is 10.2.
Further, the 4th low-impedance strips flush along the longitudinal direction with the side of the 5th low-impedance strips, and the 4th is low
Impedance band is identical as the structure size of the 5th low-impedance strips；The length l of 4th low-impedance strips3For 4mm, width w1For 2mm；
Second low-impedance strips are identical as the structure size of third low-impedance strips, the length l of second low-impedance strips2It is wide for 4mm
Spend w2For 2mm；The length l of first low-impedance strips1For 4mm, width 2mm.
Further, the anode of the varactor D11 is connected to the 4th Low ESR away from the first electric impedance resonator
The distance from top l of band4For the side edge of 2.2mm；The anode of the varactor D12 is connected to away from the second electric impedance resonator
The distance from top l of 4th low-impedance strips4For the side edge of 2.2mm.
Further, the anode of the varactor D5 is connected to the 5th low-impedance strips away from the first electric impedance resonator
Distance from bottom l4For the side edge of 2.2mm；The anode of the varactor D6 is connected to away from the second electric impedance resonator
The distance from bottom l of five low-impedance strips4For the side edge of 2.2mm.
Preferably, the c-type structure of the anode of the varactor D7 and varactor D8 and the first electric impedance resonator
Opening inner side connect one to one, the c-type of the anode and the second electric impedance resonator of varactor D9 and varactor D10
The opening inner side of structure connects one to one, and the anode of varactor D13 and varactor D14 and third impedance resonance
The open outer side of the c-type structure of device connects one to one.
Compared with prior art, the invention has the following advantages:
The first electric impedance resonator and third electric impedance resonator in the present invention share the second electric impedance resonator, and lead to respectively
The mode for crossing field coupling and magnetic field coupling transmits signal, make two-way phase of output signal respectively in advance with lag 90 °, from what shape
It is exported at balun signal.The present invention by the adjusting to capacitance size between input/output port and resonator, resonator with
The adjusting of capacitance size and the concatenated ground capacity of half wave resonator high impedance micro-strip line end between resonator
It is worth the adjusting of size, so that external sort factor is controlled, electromagnetic coupling coefficient and resonator electrical length, to reach realization pair
Centre frequency, the adjusting of bandwidth.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to the attached drawing used required in embodiment
It is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as to protection
The restriction of range to those skilled in the art without creative efforts, can also be attached according to these
Figure obtains other relevant attached drawings.
Fig. 1 is structure size schematic diagram of the invention.
Fig. 2 is pictorial diagram of the invention.
Fig. 3 is S11 parameters simulation figure of the invention.
Fig. 4 is S21 parameters simulation figure of the invention.
Fig. 5 is S31 parameters simulation figure of the invention.
Fig. 6 is the S21 parameters simulation figure that bandwidth adjustment of the invention is tested.
Fig. 7 is the S31 parameters simulation figure that bandwidth adjustment of the invention is tested.
Fig. 8 is signal output port amplitude and phase unbalance degree test chart (one) of the invention.
Fig. 9 is signal output port amplitude and phase unbalance degree test chart (two) of the invention.
In above-mentioned attached drawing, the corresponding component names of appended drawing reference are as follows:
The first low-impedance strips of 1-, the second low-impedance strips of 2-, 3- third low-impedance strips, the 4th low-impedance strips of 4-, 5- the 5th are low
Impedance band.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application apparent, with reference to the accompanying drawings and examples to the present invention
It is described further, embodiments of the present invention include but is not limited to the following example.Based on the embodiment in the application, ability
Domain those of ordinary skill every other embodiment obtained without making creative work, belongs to the application
The range of protection.
Embodiment
As shown in Figure 1 to Figure 2, a kind of restructural balun filter based on half-wave resonator is present embodiments provided,
The restructural balun filter is constituted using the identical electric impedance resonator of three structures, wherein electric impedance resonator is printed on thickness
For 25mil and on medium substrate that relative dielectric constant is 10.2.In the present embodiment, the varactor is selected
SMV123 series.It should be noted that the serial numbers term such as " first " described in the present embodiment, " second ", " third " is only used for
Same item is distinguished, the specific restriction to protection scope cannot be understood as.In addition, " bottom " described in the present embodiment, " top
The directionalities term such as portion ", " edge " is illustrated based on the drawings.
Specifically, the restructural balun filter include be covered on medium substrate and C-shaped structure first resistance
Antiresonance device, the second electric impedance resonator and third electric impedance resonator, the transfiguration that anode is connect with the bottom of the first electric impedance resonator
Diode D4, the patch capacitor C2 that one end is connect with the cathode of varactor D4 are connect with the other end of patch capacitor C2
Third port Port3, the resistance R3 that one end is connect with the cathode of varactor D4, the bottom of anode and the second electric impedance resonator
The varactor D1 of connection, the patch capacitor C1 that one end is connect with the cathode of varactor D1, it is another with patch capacitor C1
The first port Port1 of one end connection, the resistance R1 that one end is connect with the cathode of varactor D1, anode and third impedance are humorous
The varactor D15, the patch capacitor C3 that one end is connect with the cathode of varactor D15, with patch of the bottom connection of vibration device
The second port Port2 of the other end connection of chip capacitor C3, the resistance R13 that one end is connect with the cathode of varactor D15 are adopted
The opening of opposite and anode and the first electric impedance resonator c-type structure connects one to one with cathode varactor D7 and
Varactor D8, the resistance R5 that one end is connect with the cathode of varactor D7 and varactor D8 respectively, using cathode
The varactor D9 and transfiguration two that opposite and the c-type structure of anode and the second electric impedance resonator opening connects one to one
Pole pipe D10, the resistance R6 that one end is connect with the cathode of varactor D9 and varactor D10 respectively, opposite using cathode,
And varactor D13 and varactor that the opening of the c-type structure of anode and third electric impedance resonator connects one to one
D14, the resistance R12 that one end is connect with the cathode of varactor D13 and varactor D14 respectively, it is opposite using cathode and
The transfiguration that connects one to one of side edge top on the side edge top of anode and the first electric impedance resonator, the second electric impedance resonator
Diode D11 and varactor D12, the electricity that one end is connect with the cathode of varactor D11 and varactor D12 respectively
Hinder R7, and the side edge lower part of anode and first electric impedance resonator opposite using cathode, the second electric impedance resonator side edge under
The varactor D5 and varactor D6 that portion connects one to one, one end respectively with varactor D5 and varactor
The resistance R4 of the cathode connection of D6, and the side edge of anode and second electric impedance resonator top, third impedance opposite using cathode
The varactor D16 and varactor D17 to connect one to one at the top of the side edge of resonator, one end respectively with transfiguration two
The resistance R10 that pole pipe D16 is connected with the cathode of varactor D17, and anode opposite using cathode and the second electric impedance resonator
Side edge bottom, third electric impedance resonator side edge bottom the varactor D2 and varactor that connect one to one
D3, the resistance R2 that one end is connect with the cathode of varactor D2 and varactor D3 respectively, one end and the first impedance resonance
The top of 4th low-impedance strips of device connects and the resistance R8 of other end ground connection, one end are low with the 4th of the second electric impedance resonator the
The 4th low-impedance strips of the top of impedance band connects and the other end is grounded resistance R9 and one end and third electric impedance resonator
Top connection and the other end ground connection resistance R11.Wherein, the resistance R1, resistance R2, resistance R3, resistance R4, resistance R5,
Resistance R6, resistance R7, resistance R10, resistance R12 and resistance R13 the other end connect with reverse bias power supply.In addition, described
The opening inner side of the c-type structure of the anode and the first electric impedance resonator of varactor D7 and varactor D8, which corresponds, to be connected
It connects, the opening inner side one of the c-type structure of the anode and the second electric impedance resonator of varactor D9 and varactor D10 is a pair of
It should connect, and outside the opening of the c-type structure of the anode of varactor D13 and varactor D14 and third electric impedance resonator
Side connects one to one.
In the present embodiment, first electric impedance resonator, the second electric impedance resonator and third electric impedance resonator are two
The step electric impedance resonator of/mono- wavelength.First electric impedance resonator and the second electric impedance resonator relative position are laid, and second
Electric impedance resonator position opposite with third electric impedance resonator is laid, and the first electric impedance resonator, the second electric impedance resonator and third
The top of electric impedance resonator and bottom plate keep flushing.The spacing of first electric impedance resonator and the second electric impedance resonator is
The spacing of 1.5mm, second electric impedance resonator and third electric impedance resonator is 0.8mm；The opening spacing l of the c-type structure5
For 1.8mm.
In the present embodiment, the first electric impedance resonator, the second electric impedance resonator are identical with the structure of third electric impedance resonator,
It include integrally formed first low-impedance strips 1, the second low-impedance strips 2, third low-impedance strips 3, the 4th low-impedance strips 4 and the 5th
Low-impedance strips 5.Wherein, the both ends of second low-impedance strips 2 and third low-impedance strips 3 and the first low-impedance strips 1 correspond
Connection.4th low-impedance strips 4 are connect with the second low-impedance strips 2, and the 5th low-impedance strips 5 are connect with third low-impedance strips 3.
It should be noted that the 4th low-impedance strips 4 flush along the longitudinal direction with the side of the 5th low-impedance strips 5, and the 4th low-resistance
Anti- band 4 is identical as the structure size of the 5th low-impedance strips 5.Specifically, the length l of the 4th low-impedance strips 43For 4mm, width
w1For 2mm；Second low-impedance strips 2 are identical as the structure size of third low-impedance strips 3, the length of second low-impedance strips 2
Spend l2For 4mm, width w2For 2mm；The length l of first low-impedance strips 11For 4mm, width 2mm.Wherein, the transfiguration two
The anode of pole pipe D11 is connected to the distance from top l of the 4th low-impedance strips 4 away from the first electric impedance resonator4For the side of 2.2mm
Edge；The anode of the varactor D12 is connected to the distance from top l of the 4th low-impedance strips 4 away from the second electric impedance resonator4For
The side edge of 2.2mm.The anode of the varactor D5 is connected to the bottom of the 5th low-impedance strips 5 away from the first electric impedance resonator
Portion distance l4For the side edge of 2.2mm；It is low that the anode of the varactor D6 is connected to the away from the second electric impedance resonator the 5th
The distance from bottom l of impedance band 54For the side edge of 2.2mm.
In order to verify and optimize the parameter characteristic of restructural balun filter, spy carry out centre frequency adjust emulation testing,
S11 parameter testing, S21 parameter testing and signal output port amplitude and phase unbalance degree are tested.Its test curve is specifically such as
Shown in Fig. 3 to Fig. 9.The restructural balun filter of this example is the modeling and simulating in electromagnetic simulation software HFSS.15, is gone forward side by side
Processing that have gone perfect in kind test.It can be seen from the figure that varactor is in different appearances by changing DC offset voltage
When value, S parameter of the present invention and amplitude output signal phase unbalance degree test result.Test result shows present invention design reason
It reads correct feasible.Fig. 3-Fig. 7 is S parameter emulation and the object test figure of restructural balun filter in this example, can from figure
To find out, which covers 1.08-1.6GHz, and 1-dB bandwidth adjustment range is about 50-100MHz,
Return loss is better than -15dB in passband.
Fig. 8 is two port amplitude differences of restructural balun filter in this example, it can be seen from the figure that the balun is filtered
Two Differential Output port 1dB amplitude of bandwidth differences in wave device passband are within 0.5dB.
Fig. 9 is two output port phase differences of restructural balun filter in this example, it can be seen from the figure that this bar
Two Differential Output port 1dB bandwidth phase differences in human relations filter passband illustrate 180 ° of two balance ports instead within 3 °
It is mutually functional.
Above-described embodiment is merely a preferred embodiment of the present invention, and it is not intended to limit the protection scope of the present invention, as long as using
Design principle of the invention, and the non-creative variation worked and made is carried out on this basis, it should belong to of the invention
Within protection scope.
Claims (7)
1. the restructural balun filter based on half-wave resonator, it is characterised in that:
Including be covered on medium substrate and the first electric impedance resonator of C-shaped structure, the second electric impedance resonator and third resistance
Antiresonance device, the varactor D4 that anode is connect with the bottom of the first electric impedance resonator, the yin of one end and varactor D4
The patch capacitor C2 of pole connection, the third port Port3 being connect with the other end of patch capacitor C2, one end and varactor D4
Cathode connection resistance R3, the varactor D1 that anode is connect with the bottom of the second electric impedance resonator, one end and transfiguration two
The patch capacitor C1 of the cathode connection of pole pipe D1, the first port Port1 being connect with the other end of patch capacitor C1, one end and change
Hold the resistance R1, the varactor D15 that anode is connect with the bottom of third electric impedance resonator, one of the cathode connection of diode D1
Hold the patch capacitor C3 connecting with the cathode of varactor D15, the second port connecting with the other end of patch capacitor C3
Port2, the resistance R13 that one end is connect with the cathode of varactor D15, and anode and first impedance opposite using cathode are humorous
Shake device c-type structure opening the varactor D7 and varactor D8 that connect one to one, one end respectively with transfiguration two
The resistance R5 that pole pipe D7 is connected with the cathode of varactor D8, opposite using cathode and anode and the second electric impedance resonator C
The varactor D9 and varactor D10 that the opening of type structure connects one to one, one end respectively with varactor D9
The resistance R6 connected with the cathode of varactor D10, opposite using cathode and anode and third electric impedance resonator c-type knot
The varactor D13 and varactor D14 that the opening of structure connects one to one, one end respectively with varactor D13 and
The resistance R12 of the cathode connection of varactor D14, opposite using cathode and anode and the first electric impedance resonator side edge
Top, the varactor D11 that connects one to one of side edge top of the second electric impedance resonator and varactor D12, one
Hold the resistance R7 that connect respectively with the cathode of varactor D11 and varactor D12, and anode opposite using cathode and
The varactor that the side edge lower part of first electric impedance resonator, the side edge lower part of the second electric impedance resonator connect one to one
D5 and varactor D6, the resistance R4 that one end is connect with the cathode of varactor D5 and varactor D6 respectively are used
Cathode is relatively and the side edge top one at the side edge of anode and the second electric impedance resonator top, third electric impedance resonator is a pair of
The varactor D16 and varactor D17 that should be connected, one end is respectively with varactor D16's and varactor D17
The resistance R10 of cathode connection, and anode and the side edge bottom of second electric impedance resonator, third impedance opposite using cathode are humorous
The side edge bottom varactor D2 that connects one to one and varactor D3 of vibration device and one end respectively with transfiguration two
The resistance R2 that pole pipe D2 is connected with the cathode of varactor D3；First electric impedance resonator, the second electric impedance resonator and
Three electric impedance resonators are the step electric impedance resonator of half wavelength；
First electric impedance resonator and the second electric impedance resonator relative position are laid, and the second electric impedance resonator and third impedance are humorous
The opposite position laying of the device that shakes, and the first electric impedance resonator, the top of the second electric impedance resonator and third electric impedance resonator and bottom plate
It keeps flushing；The spacing of first electric impedance resonator and the second electric impedance resonator is 1.5mm, second electric impedance resonator
Spacing with third electric impedance resonator is 0.8mm；The opening spacing l of the c-type structure5For 1.8mm；
First electric impedance resonator, the second electric impedance resonator are identical with the structure of third electric impedance resonator, include one at
The first low-impedance strips (1), the second low-impedance strips (2), third low-impedance strips (3), the 4th low-impedance strips (4) and the 5th low-resistance of type
Anti- band (5)；The both ends of second low-impedance strips (2) and third low-impedance strips (3) and the first low-impedance strips (1), which correspond, to be connected
It connects；4th low-impedance strips (4) connect with the second low-impedance strips (2), and the 5th low-impedance strips (5) and third low-impedance strips
(3) it connects；
The resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R10, resistance R12 and electricity
The other end of resistance R13 is connect with reverse bias power supply.
2. the restructural balun filter according to claim 1 based on half-wave resonator, which is characterized in that further include
One end is connect with the top of the 4th low-impedance strips (4) of the first electric impedance resonator and the resistance R8 of other end ground connection, one end and the
The top of 4th low-impedance strips (4) of two electric impedance resonators connects and the resistance R9 of other end ground connection and one end are hindered with third
The top of 4th low-impedance strips (4) of antiresonance device connects and the resistance R11 of other end ground connection.
3. the restructural balun filter according to claim 1 or 2 based on half-wave resonator, which is characterized in that institute
State medium substrate with a thickness of 25mil, and relative dielectric constant is 10.2.
4. the restructural balun filter according to claim 3 based on half-wave resonator, which is characterized in that described
Four low-impedance strips (4) flush along the longitudinal direction with the side of the 5th low-impedance strips (5), and the 4th low-impedance strips (4) are low with the 5th
The structure size of impedance band (5) is identical；The length l of 4th low-impedance strips (4)3For 4mm, width w1For 2mm；Described second
Low-impedance strips (2) are identical as the structure size of third low-impedance strips (3), the length l of second low-impedance strips (2)2For 4mm,
Width w2For 2mm；The length l of first low-impedance strips (1)1For 4mm, width 2mm.
5. the restructural balun filter according to claim 3 based on half-wave resonator, which is characterized in that the change
The anode for holding diode D11 is connected to the distance from top l of the 4th low-impedance strips (4) away from the first electric impedance resonator4For 2.2mm's
Side edge；The anode of the varactor D12 be connected to the tops of the 4th low-impedance strips (4) away from the second electric impedance resonator away from
From l4For the side edge of 2.2mm.
6. the restructural balun filter according to claim 3 based on half-wave resonator, which is characterized in that the change
The anode for holding diode D5 is connected to the distance from bottom l of the 5th low-impedance strips (5) away from the first electric impedance resonator4For 2.2mm's
Side edge；The anode of the varactor D6 be connected to the bottoms of the 5th low-impedance strips (5) away from the second electric impedance resonator away from
From l4For the side edge of 2.2mm.
7. the restructural balun filter according to claim 3 based on half-wave resonator, which is characterized in that the change
The opening inner side for holding the anode of diode D7 and varactor D8 and the c-type structure of the first electric impedance resonator corresponds company
It connects, the opening inner side one of the c-type structure of the anode and the second electric impedance resonator of varactor D9 and varactor D10 is a pair of
It should connect, and outside the opening of the c-type structure of the anode of varactor D13 and varactor D14 and third electric impedance resonator
Side connects one to one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811275952.9A CN109449547B (en) | 2018-10-30 | 2018-10-30 | Restructural balun filter based on half-wave resonator |
Applications Claiming Priority (1)
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109449548A (en) * | 2018-11-06 | 2019-03-08 | 杨涛 | Reconfigurable multifunctional filter based on half-wave resonator |
| CN110380167A (en) * | 2019-06-12 | 2019-10-25 | 电子科技大学 | A kind of the adjustable of microstrip line form single-ended arrives balance filter |
| CN110504945A (en) * | 2019-08-05 | 2019-11-26 | 电子科技大学 | A kind of restructural loop filtering device |
| CN111463530A (en) * | 2020-04-10 | 2020-07-28 | 昆山鸿永微波科技有限公司 | Silicon-based filtering chip with tunable bandwidth |
| CN112187205A (en) * | 2020-08-20 | 2021-01-05 | 电子科技大学 | Power division filter network with random phase difference output |
| CN114976551A (en) * | 2022-01-13 | 2022-08-30 | 电子科技大学 | Balun device based on multilayer substrate integrated waveguide and balun circuit |
| TWI834457B (en) * | 2022-12-29 | 2024-03-01 | 特崴光波導股份有限公司 | Balun filter |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449548A (en) * | 2018-11-06 | 2019-03-08 | 杨涛 | Reconfigurable multifunctional filter based on half-wave resonator |
| CN109449548B (en) * | 2018-11-06 | 2019-10-29 | 杨涛 | Reconfigurable multifunctional filter based on half-wave resonator |
| CN110380167A (en) * | 2019-06-12 | 2019-10-25 | 电子科技大学 | A kind of the adjustable of microstrip line form single-ended arrives balance filter |
| CN110380167B (en) * | 2019-06-12 | 2021-05-25 | 电子科技大学 | Microstrip line type adjustable single-end-to-balance filter |
| CN110504945A (en) * | 2019-08-05 | 2019-11-26 | 电子科技大学 | A kind of restructural loop filtering device |
| CN110504945B (en) * | 2019-08-05 | 2022-12-02 | 电子科技大学 | Reconfigurable annular filtering device |
| CN111463530A (en) * | 2020-04-10 | 2020-07-28 | 昆山鸿永微波科技有限公司 | Silicon-based filtering chip with tunable bandwidth |
| CN111463530B (en) * | 2020-04-10 | 2022-04-05 | 昆山鸿永微波科技有限公司 | Silicon-based filtering chip with tunable bandwidth |
| CN112187205A (en) * | 2020-08-20 | 2021-01-05 | 电子科技大学 | Power division filter network with random phase difference output |
| CN114976551A (en) * | 2022-01-13 | 2022-08-30 | 电子科技大学 | Balun device based on multilayer substrate integrated waveguide and balun circuit |
| TWI834457B (en) * | 2022-12-29 | 2024-03-01 | 特崴光波導股份有限公司 | Balun filter |
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