CN109446108A - A method of based on the effective Hash memory pages of static random access memory fast searching - Google Patents

A method of based on the effective Hash memory pages of static random access memory fast searching Download PDF

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Publication number
CN109446108A
CN109446108A CN201811253541.XA CN201811253541A CN109446108A CN 109446108 A CN109446108 A CN 109446108A CN 201811253541 A CN201811253541 A CN 201811253541A CN 109446108 A CN109446108 A CN 109446108A
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China
Prior art keywords
random access
memory pages
static random
access memory
mapping table
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Withdrawn
Application number
CN201811253541.XA
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Chinese (zh)
Inventor
张盛豪
李庭育
黄中柱
魏智汎
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Jiangsu Hua Cun Electronic Technology Co Ltd
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Jiangsu Hua Cun Electronic Technology Co Ltd
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Priority to CN201811253541.XA priority Critical patent/CN109446108A/en
Priority to PCT/CN2018/115512 priority patent/WO2020082451A1/en
Publication of CN109446108A publication Critical patent/CN109446108A/en
Withdrawn legal-status Critical Current

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Read Only Memory (AREA)

Abstract

The invention discloses a kind of methods based on the effective Hash memory pages of static random access memory fast searching, comprising the following steps: A, based on static random access memory come the mapping table of storage entities address mapping logical address;B, the size of static random access memory is adjusted;C, the place Hash memory pages of solid mapping table are defined;D, the place Hash memory pages of adjustment solid mapping table that can be more elastic, the present invention proposes that one kind can be based on static random access memory, a kind of method of the effective Hash memory pages of fast searching, the method can quickly search effective Hash memory pages, than existing method for searching, it can more accelerate to find effective Hash memory pages, shorten the time for finding Hash memory pages.

Description

A method of based on the effective Hash memory pages of static random access memory fast searching
Technical field
The present invention relates to based on the effective Hash memory pages technical field of static random access memory fast searching, specially one kind Method based on the effective Hash memory pages of static random access memory fast searching.
Background technique
SRAM, which does not need refresh circuit, can save the data of its storage inside.And DRAM(Dynamic Random Access Memory) at regular intervals, refresh charge primary, otherwise internal data can disappear, therefore SRAM has The shortcomings that higher performance, power consumption is smaller, but SRAM also has it, i.e., it integrated level it is lower, the DRAM memory of identical capacity It can be designed as lesser volume, but SRAM but needs very big volume.The silicon wafer of same area can make larger capacity DRAM, therefore SRAM seems more expensive.
A kind of cache being placed between cpu and main memory, there are two types of specifications for it: one is the high speeds being fixed on mainboard Caching;Another kind is inserted into the COAST(Cache On A Stick on card slot) cache of expansion, in addition in CMOS core In the circuit of piece 1468l8, also there are the 128 byte SRAM compared with low capacity in its inside, stores the configuration data set by us. There are also for the transmission that accelerates CPU internal data, from 80486CPU, cache is also configured in the inside of CPU, therefore Pentium CPU just has so-called L1 Cache(on-chip cache) and L2Cache(second level cache) noun, generally L1 Cache is the inside for building CPU in, and L2 Cache is to design in the outside of CPU, but Pentium Pro is L1 and L2 Cache is designed in the inside of CPU simultaneously, therefore the volume of Pentium Pro is larger.L2 Cache is moved to CPU again by Pentium II In flight data recorder except kernel.The obvious speed of SRAM is fast, does not need refresh operation, but also has the shortcomings that other, is exactly price Height, volume is big, so can't be used as the biggish main memory of dosage on mainboard.
Flash memory is a kind of nonvolatile memory, i.e. power-off data will not lose.Because of the digital product with flash memory
Be flash memory unlike RAM(random access memory) data are rewritten as unit of byte, therefore cannot replace RAM, dodge Depositing card (Flash Card) is the memory for reaching storage electronic information using flash memory (Flash Memory) technology, is normally applied In digital camera, palm PC is used as storage medium in the small digital products such as MP3, so appearance is small and exquisite, blocks just like one Piece, so referred to as flash card.According to different production firms and different applications, flash card probably has SmartMedia(SM Card), Compact Flash(CF card), MultiMediaCard(MMC card), Secure Digital(SD card), Memory Stick(memory stick), XD-Picture Card(XD card) and micro harddisk (MICRODRIVE) although these flash card appearances, rule Lattice are different, but technical principle is all identical.
In existing flash-memory storage system, if there is identical logical address is written in flash memory, then newest write can be assert The logical address entered is effective Hash memory pages.Conversely, older Hash memory pages are then to be identified as invalid Hash memory pages.Work as Hash memory pages When insufficient, then garbage collection is needed to be implemented, however, must then judge in each Hash memory pages, if be when carrying out garbage collection Effective Hash memory pages.
Random access memory is also referred to as " random access memory ", is the internal storage for directly exchanging data with CPU, also cries Main memory (memory).It can read and write at any time, and speed is quickly, usually as operating system or other be currently running in program Ephemeral data storaging medium.
The content of storage unit arbitrarily can be taken out or be stored on demand, and the speed accessed is unrelated with the position of storage unit Memory.This memory will lose its storage content when power is off, therefore be mainly used for storing the program that uses of short time.It presses According to the working principle of storage unit, random access memory is divided into Static RAM and dynamic RAM again.
So-called " arbitrary access " is referred to when the data in memory are read or written, the required time and this Position where segment information or the position being written are unrelated.Opposite, it reads or write sequence accesses (Sequential When Access) storing the information in equipment, required time and position will have relationship.It is mainly used to deposit operation system System, various application programs, data etc..
It is that corresponding logic is written in the remaining space of effective Hash memory pages in current flash memory storage method Address.Thereafter, when needing to judge whether Hash memory pages are effective Hash memory pages, then each Hash memory pages are sequentially read in remaining space Logical address.The logical address that will be obtained mutually is compared with logical address mapping table, and whether this Hash memory pages that you can get it are to have Effect.
Summary of the invention
The purpose of the present invention is to provide a kind of method of the effective Hash memory pages of fast searching, the method can be searched quickly It to effective Hash memory pages, can more accelerate to find effective Hash memory pages, shorten the one kind for finding the time of Hash memory pages based on static random The method for accessing the effective Hash memory pages of memory fast searching, to solve the problems mentioned in the above background technology.
To achieve the above object, the invention provides the following technical scheme: it is a kind of quick based on static random access memory The method for searching effective Hash memory pages, the following steps are included:
A, based on static random access memory come the mapping table of storage entities address mapping logical address;
B, the size of static random access memory is adjusted;
C, the place Hash memory pages of solid mapping table are defined;
D, the place Hash memory pages of adjustment solid mapping table that can be more elastic.
It preferably, include transistor, memory cell array, address decoding on the step A static random access memory Device, sense amplifier, control circuit and buffering drive circuit.
It preferably, include segmentation on the step A mapping table, each segmentation is equipped with 1024 bytes.
Preferably, it includes that global variable goes to record institute that the step C, which defines method existing for the sudden strain of a muscle where solid mapping table, The address of some solid mapping table Hash memory pages with can by calculate random access memory size come obtain solid mapping table dodge Deposit the address of page.
Preferably, the step C entity image table address is 4K/4/n.
Compared with prior art, the beneficial effects of the present invention are:
A kind of method of the effective Hash memory pages of fast searching of the present invention, the method can quickly search effective Hash memory pages, than Existing method for searching can more accelerate to find effective Hash memory pages, shorten the time for finding Hash memory pages.
Detailed description of the invention
Fig. 1 is cutting machine body construction schematic diagram of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Fig. 1 is please referred to, the present invention provides a kind of technical solution: one kind is had based on static random access memory fast searching The method for imitating Hash memory pages, the following steps are included:
A, based on static random access memory come the mapping table of storage entities address mapping logical address;
B, the size of static random access memory is adjusted;
C, the place Hash memory pages of solid mapping table are defined;
D, the place Hash memory pages of adjustment solid mapping table that can be more elastic.
Based on static random access memory come the mapping table of storage entities address mapping logical address, physical address image The mapping table of logical address is equipped with user data memory and solid mapping table for storing user data, does not have three users A solid mapping table is equipped between data, by the combination of solid mapping table and user data, to static random access memory Device is controlled, on static random access memory include transistor, memory cell array, address decoder, sense amplifier, Control circuit and buffering drive circuit.
The size of static random access memory is adjusted, the place Hash memory pages of solid mapping table is defined, includes on mapping table Segmentation, each segmentation is equipped with 1024 bytes, based on the of different sizes of static random access memory, so that solid mapping Hash memory pages where table can also be changed, it is necessary to go to record the address of each solid mapping table Hash memory pages, so available two Kind mode goes to the address of record solid mapping table Hash memory pages, and one can be gone to record all solid mapping table flash memories with global variable The address of page, secondly the address of solid mapping table Hash memory pages can be obtained by the size for calculating random access memory.
Method existing for sudden strain of a muscle where definition solid mapping table includes that global variable goes to record all solid mapping table sudden strains of a muscle The address of page and the address that can obtain solid mapping table Hash memory pages by the size for calculating random access memory are deposited, is deposited at random In the case that the size of access to memory only has 4K, every 4 bytes are a unit, a solid mapping unit are recorded, however, one A Hash memory pages can record n solid mapping unit.
The place Hash memory pages of adjustment solid mapping table that can be more elastic, Hash memory pages where you can get it solid mapping table Location, solid mapping table address is 4K/4/n, can be based on the big of static random access memory in each flash memory block It is small, and 1 to n solid mapping table not waited can be stored.
A kind of method of the effective Hash memory pages of fast searching of the present invention, the method can quickly search effective flash memory Page can more accelerate to find effective Hash memory pages, shorten the time for finding Hash memory pages than existing method for searching.
The beneficial effects of the present invention are:
A kind of method of the effective Hash memory pages of fast searching of the present invention, the method can quickly search effective Hash memory pages, than Existing method for searching can more accelerate to find effective Hash memory pages, shorten the time for finding Hash memory pages.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding And modification, the scope of the present invention is defined by the appended.

Claims (5)

1. a kind of method based on the effective Hash memory pages of static random access memory fast searching, it is characterised in that: including following Step:
A, based on static random access memory come the mapping table of storage entities address mapping logical address;
B, the size of static random access memory is adjusted;
C, the place Hash memory pages of solid mapping table are defined;
D, the place Hash memory pages of adjustment solid mapping table that can be more elastic.
2. a kind of method based on the effective Hash memory pages of static random access memory fast searching according to claim 1, It is characterized by: including transistor, memory cell array, address decoder, spirit on the step A static random access memory Quick amplifier, control circuit and buffering drive circuit.
3. a kind of method based on the effective Hash memory pages of static random access memory fast searching according to claim 1, It is characterized by: including segmentation on the step A mapping table, each segmentation is equipped with 1024 bytes.
4. a kind of method based on the effective Hash memory pages of static random access memory fast searching according to claim 1, It is characterized by: the step C define method existing for the sudden strain of a muscle where solid mapping table include global variable go to record it is all The address of solid mapping table Hash memory pages with can obtain solid mapping table Hash memory pages by the size for calculating random access memory Address.
5. a kind of method based on the effective Hash memory pages of static random access memory fast searching according to claim 1, It is characterized by: the step C entity image table address is 4K/4/n.
CN201811253541.XA 2018-10-25 2018-10-25 A method of based on the effective Hash memory pages of static random access memory fast searching Withdrawn CN109446108A (en)

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CN201811253541.XA CN109446108A (en) 2018-10-25 2018-10-25 A method of based on the effective Hash memory pages of static random access memory fast searching
PCT/CN2018/115512 WO2020082451A1 (en) 2018-10-25 2018-11-14 Method for quickly searching for effective flash memory page based on static random access memory

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CN103176916B (en) * 2013-03-07 2016-03-09 中国科学院苏州纳米技术与纳米仿生研究所 The address conversion method of flash memory and flash memory
TWI522804B (en) * 2014-04-23 2016-02-21 威盛電子股份有限公司 Flash memory controller and data storage device and flash memory control method
CN106775466A (en) * 2016-12-05 2017-05-31 深圳市金泰克半导体有限公司 A kind of FTL read buffers management method and device without DRAM
CN106802777A (en) * 2017-01-20 2017-06-06 杭州电子科技大学 A kind of flash translation layer (FTL) control method for solid storage device
CN108491335B (en) * 2018-03-30 2020-12-29 深圳忆联信息系统有限公司 Method, device, equipment and medium for processing mapping table item
CN108681509B (en) * 2018-04-20 2022-04-08 江苏华存电子科技有限公司 Method for quickly establishing flash memory mapping table

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