CN109440074B - High-energy-output hydrogen explosion membrane bridge and preparation method thereof - Google Patents

High-energy-output hydrogen explosion membrane bridge and preparation method thereof Download PDF

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CN109440074B
CN109440074B CN201811485665.0A CN201811485665A CN109440074B CN 109440074 B CN109440074 B CN 109440074B CN 201811485665 A CN201811485665 A CN 201811485665A CN 109440074 B CN109440074 B CN 109440074B
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hydrogen
substrate
film
hydrogen storage
bridge
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CN109440074A (en
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蒋洪川
艾梦婷
王亮
王窈
邓新武
赵晓辉
张万里
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University of Electronic Science and Technology of China
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
    • C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
    • C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
    • C01B3/0084—Solid storage mediums characterised by their shape, e.g. pellets, sintered shaped bodies, sheets, porous compacts, spongy metals, hollow particles, solids with cavities, layered solids
    • C—CHEMISTRY; METALLURGY
    • C06—EXPLOSIVES; MATCHES
    • C06C—DETONATING OR PRIMING DEVICES; FUSES; CHEMICAL LIGHTERS; PYROPHORIC COMPOSITIONS
    • C06C7/00—Non-electric detonators; Blasting caps; Primers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/32—Hydrogen storage

Abstract

The invention provides a high-energy-output hydrogen explosion membrane bridge and a preparation method thereof, belonging to the technical field of initiating explosive devices. The hydrogen explosion membrane bridge is sequentially provided with a substrate, a bridge area thin film layer and a protective layer from bottom to top, wherein the bridge area thin film layer is a hydrogen storage thin film. The invention selects the hydrogen storage film as the film bridge material of the impact sheet detonator, the hydrogen storage film generates plasma explosion under the action of external energy such as electric energy, pulse laser energy and the like, and simultaneously, the hydrogen storage film can also generate hydrogen explosion due to the large amount of hydrogen in the film bridge; therefore, the hydrogen storage film can simultaneously generate plasma explosion and hydrogen explosion under the action of external energy such as electric energy, pulse laser energy and the like, the unit energy output and energy conversion efficiency of the process are greatly improved, the reliability and stability of the exploding foil are improved, and the detonating energy and the detonating voltage are effectively reduced.

Description

High-energy-output hydrogen explosion membrane bridge and preparation method thereof
Technical Field
The invention belongs to the technical field of initiating explosive devices, relates to an exploding foil for an impact sheet detonator, and particularly relates to a high-energy-output hydrogen explosion membrane bridge and a preparation method thereof.
Background
The impact sheet detonator is used as a key energy conversion element in various ignition and initiation devices and is widely applied to military and civil fields such as aviation, aerospace, missile launching, mine blasting and the like. The conventional impact sheet detonator mainly comprises an exploding foil, a flying sheet, an acceleration chamber, a explosive column and the like, as shown in fig. 1. The working principle of the explosion foil is that the explosion foil material is subjected to phase change under the action of the excitation energy, the explosion foil material is converted from a solid state into a plasma state, and the plasma generated by the phase change shears and accelerates the flyer material, so that the flyer impacts gunpowder at a very high speed, and the ignition and detonation functions of the impact sheet detonator are realized.
At present, metal Cu is usually adopted as a bridge area film material for the exploding foil, the material is easy to generate electric explosion under the action of a high electric field to generate plasma, but a single copper exploding bridge has the problems of low energy conversion rate, low energy output and the like. Therefore, researchers at home and abroad try to integrate energy-containing reaction multilayer films such as Al/Ni, Al/CuO, B/Ti and the like on the Cu exploding foil, and the energy density of an exploding bridge is improved by combining electric energy and chemical energy by utilizing chemical energy released in the reaction process of the energy-containing films, so that the energy output of the exploding foil is enhanced. However, the method has the problems of high initiation energy, mismatching of the reaction rate of the energy-containing film and the ionization process of the exploding foil and the like, so that the energy conversion efficiency improvement capability of the exploding bridge is limited. Therefore, the novel membrane bridge material and the novel membrane bridge structure are designed and prepared, the energy conversion efficiency of the impact sheet detonator is improved, and the constant theme of the impact sheet detonator is provided.
Disclosure of Invention
The invention provides a high-energy output hydrogen explosion membrane bridge (explosion foil) and a preparation method thereof aiming at the defects in the background technology. The invention selects the hydrogen storage film as the film bridge material of the impact sheet detonator, the hydrogen storage film generates plasma explosion under the action of external energy such as electric energy, pulse laser energy and the like, and simultaneously, the hydrogen storage film can also generate hydrogen explosion due to the large amount of hydrogen in the film bridge; therefore, the hydrogen storage film can simultaneously generate plasma explosion and hydrogen explosion under the action of external energy such as electric energy, pulse laser energy and the like, and the unit energy output and energy conversion efficiency of the process are greatly improved.
The technical scheme of the invention is as follows:
the hydrogen explosion membrane bridge with high energy output is characterized in that a substrate, a membrane layer of a bridge area and a protective layer are sequentially arranged from bottom to top, and the membrane layer of the bridge area is a hydrogen storage membrane.
Further, the hydrogen-absorbing thin film is a hydrogen-absorbing alloy thin film such as a Ti-based alloy thin film (Ti/Mo, Ti/Fe, Ti/Ni, etc.), a Mg-based alloy thin film (Mg/Al, Mg/Ni, Mg/Pd, etc.), or a Zr-based alloy thin film (Zr/Co, Zr, etc.).
Further, the substrate is a ceramic substrate, a silicon substrate or a glass substrate; the protective layer is made of Ta, Mo or Cr and other metal materials.
Furthermore, the thickness of the hydrogen storage film is 0.1-5 μm, and the thickness of the protective layer is 0.01-5 μm.
A preparation method of a high-energy-output hydrogen explosion membrane bridge comprises the following steps:
step 1, forming a hydrogen storage film on a substrate by adopting a magnetron sputtering method;
step 2, forming a protective layer on the hydrogen storage film obtained in the step 1 by adopting a magnetron sputtering method;
step 3, placing the substrate with the hydrogen storage film and the protective layer obtained in the step 2 into a gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Heating the substrate to 20-1000 ℃ below Pa; introducing hydrogen into the adsorption instrument until the gas pressure reaches 0.5 KPa-5 MPa, and keeping the temperature at 20-1000 ℃ and the hydrogen pressure at 0.5 KPa-5 MPa for 0.5-100 h to enable the hydrogen storage film to absorb the hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge.
Further, the purity of the hydrogen in the step 3 is not lower than 99.99 percent by volume percentage.
The invention also provides a preparation method of the hydrogen explosion membrane bridge with high energy output, which selects the MgAl alloy film as a hydrogen storage film material and Ta as a protective layer material to prevent Mg from being oxidized and specifically comprises the following steps:
step 1, cleaning a substrate: ultrasonically cleaning a substrate in acetone, ethanol and deionized water in sequence, and drying for later use;
step 2, depositing an MgAl film on the cleaned substrate in the step 1 by adopting a magnetron sputtering method to serve as a hydrogen storage film; wherein the sputtering pressure is 0.3-0.6 Pa, the sputtering power is 40-200W, the sputtering gas is inert gas such as argon, the sputtering time is 40-120 min, and the thickness of the obtained MgAl film is 0.1-5 μm;
step 3, depositing a Ta film on the hydrogen storage film obtained in the step 2 by adopting a magnetron sputtering method to serve as a protective layer; wherein the sputtering pressure is 0.3-0.6 Pa, the sputtering power is 40-200W, the sputtering gas is inert gas such as argon, the sputtering time is 40-120 min, and the thickness of the obtained Ta film is 0.01-5 μm;
step 4, taking out the substrate with the hydrogen storage film and the protective layer obtained in the step 3, sequentially cleaning the substrate in acetone and deionized water, and drying the substrate;
step 5, hydrogenation reaction of the hydrogen storage film: putting the dried sample in the step 4 into a gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Heating the substrate to 20-1000 ℃ below Pa; introducing hydrogen into the adsorption instrument until the gas pressure reaches 0.5 KPa-5 MPa, and keeping the temperature at 20-1000 ℃ and the hydrogen pressure at 0.5 KPa-5 MPa for 0.5-100 h to enable the hydrogen storage film to absorb the hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge.
Further, the purity of the hydrogen in the step 5 is not lower than 99.99 percent by volume percentage.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a high-energy output hydrogen explosion membrane bridge and a preparation method thereof.A hydrogen storage membrane is selected as a membrane bridge material of an impact sheet detonator, the hydrogen storage membrane generates plasma explosion under the action of external energy such as electric energy, pulse laser energy and the like, and simultaneously, the hydrogen storage membrane can also generate hydrogen explosion due to the large amount of hydrogen contained in the membrane bridge; therefore, the hydrogen storage film can simultaneously generate plasma explosion and hydrogen explosion under the action of external energy such as electric energy, pulse laser energy and the like, the unit energy output and energy conversion efficiency of the process are greatly improved, the reliability and stability of the exploding foil are improved, and the detonating energy and the detonating voltage are effectively reduced.
Drawings
FIG. 1 is a schematic structural view of a conventional impact sheet detonator;
FIG. 2 is a schematic structural diagram of a hydrogen rupture disk bridge according to the present invention; wherein, 1 is a substrate, 2 is a hydrogen storage film layer, and 3 is a protective layer.
Detailed Description
The technical scheme of the invention is detailed below by combining the accompanying drawings and the embodiment.
A hydrogen explosion membrane bridge with high energy output is characterized in that the hydrogen explosion membrane bridge sequentially comprises a substrate, a membrane layer of a bridge area and a protective layer from bottom to top, wherein the membrane layer of the bridge area is a hydrogen storage membrane; the hydrogen-absorbing thin film is a hydrogen-absorbing alloy thin film such as a Ti-based alloy thin film (Ti/Mo, Ti/Fe, Ti/Ni, etc.), a Mg-based alloy thin film (Mg/Al, Mg/Ni, Mg/Pd, etc.), or a Zr-based alloy thin film (Zr/Co, Zr, etc.).
The invention also provides a preparation method of the hydrogen explosion membrane bridge with high energy output, which selects the MgAl alloy film as a hydrogen storage film material and Ta as a protective layer material to prevent Mg from being oxidized and specifically comprises the following steps:
step 1, cleaning a substrate: selecting 3 inches of Al2O3Taking a ceramic substrate as a substrate, ultrasonically cleaning the substrate in acetone, ethanol and deionized water for 15min in sequence, and drying the substrate for later use;
step 2, forming a photoresist mask on the cleaned substrate in the step 1 by adopting a photoetching technology, and then depositing an MgAl film as a hydrogen storage film by adopting a magnetron sputtering method; wherein the sputtering pressure is 0.3-0.6 Pa, the sputtering power is 40-200W, the sputtering gas is argon, the sputtering time is 40-120 min, and the thickness of the obtained MgAl film is 0.1-5 μm;
step 3, depositing a Ta film on the hydrogen storage film obtained in the step 2 by adopting a magnetron sputtering method to serve as a protective layer; wherein the sputtering pressure is 0.3-0.6 Pa, the sputtering power is 40-200W, the sputtering gas is argon, the sputtering time is 40-120 min, and the thickness of the obtained Ta film is 0.01-5 μm;
step 4, taking out the substrate with the hydrogen storage film and the protective layer obtained in the step 3, soaking the substrate in acetone to remove the photoresist on the substrate and the film adhered to the photoresist, washing the substrate with deionized water, and drying the substrate;
step 5, hydrogenation reaction of the hydrogen storage film: putting the dried sample in the step 4 into a gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Heating the substrate to 20-1000 ℃ below Pa; introducing hydrogen into the adsorption instrument until the gas pressure reaches 0.5 KPa-5 MPa, and keeping the temperature at 20-1000 ℃ and the hydrogen pressure at 0.5 KPa-5 MPa for 0.5-100 h to enable the hydrogen storage film to absorb the hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge.
Further, the purity of argon in step 2 and step 3 is not less than 99.99% by volume percentage.
Example 1
The embodiment provides a preparation method of a high-energy-output hydrogen explosion membrane bridge, which selects an MgAl alloy film as a hydrogen storage film material and Ta as a protective layer material to prevent Mg from being oxidized, and specifically comprises the following steps:
step 1, cleaning a substrate: selecting Al with the diameter of 3 inches2O3Taking a ceramic substrate as a substrate, ultrasonically cleaning the substrate in acetone, ethanol and deionized water for 15min in sequence, and drying the substrate for later use;
step 2, coating a layer of PR1-4000A type photoresist on the surface of the substrate cleaned in the step 1 by using a spin coater, forming a photoresist mask on the surface of the substrate by using a photoetching technology, and depositing an MgAl film as a hydrogen storage film by using a magnetron sputtering method; wherein the sputtering pressure is 0.6Pa, the sputtering power is 100W, the sputtering gas is argon, and the thickness of the obtained MgAl film is 2 μm;
step 3, depositing a Ta film on the MgAl film obtained in the step 2 by adopting a magnetron sputtering method to serve as a protective layer; wherein the sputtering pressure is 0.45Pa, the sputtering power is 40W, the sputtering gas is argon, and the thickness of the obtained Ta film is 20 nm;
step 4, taking out the substrate with the hydrogen storage film and the protective layer obtained in the step 3, soaking the substrate in acetone to remove the photoresist on the substrate and the film adhered to the photoresist, washing the substrate with deionized water, and drying the substrate;
step 5, hydrogenation reaction of the hydrogen storage film: putting the sample dried in the step 4 into a 3H-2000PH1 type high-temperature high-pressure gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Pa below, and then heating the substrate to 300 ℃; then introducing hydrogen into the adsorption instrument until the hydrogen is completely dissolvedKeeping the temperature at 300 ℃ and the hydrogen pressure at 2MPa for 3h until the gas pressure reaches 2MPa, so that the hydrogen storage film absorbs hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge.
Example 2
This example is different from example 1 in that the process of step 5 is: putting the sample dried in the step 4 into a 3H-2000PH1 type high-temperature high-pressure gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Pa below, and then heating the substrate to 600 ℃; then introducing hydrogen into the adsorption instrument until the gas pressure reaches 0.5KPa, and keeping the temperature at 600 ℃ and the hydrogen pressure at 0.5KPa for 20h to enable the hydrogen storage film to absorb the hydrogen. The rest of the procedure was the same as in example 1.
Example 3
This example is different from example 1 in that the process of step 5 is: putting the sample dried in the step 4 into a 3H-2000PH1 type high-temperature high-pressure gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Pa below, and then heating the substrate to 900 ℃; introducing hydrogen into the adsorption instrument until the gas pressure reaches 3MPa, and keeping the temperature at 900 ℃ and the hydrogen pressure at 3MPa for 80 hours to enable the hydrogen storage film to absorb the hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge. The rest of the procedure was the same as in example 1.
In the process of generating plasma by explosion reaction of a traditional metal film bridge, phenomena such as energy diffusion and heat transfer are accompanied, and most energy (electric energy, laser, shock wave and the like) is not converted into kinetic energy of flyings and is consumed in the forms of heat energy or light energy and the like. Compared with the existing explosive foil material, the hydrogen explosion membrane bridge provided by the invention has the advantages that the hydrogen storage thin film layer is transformed in physical form to generate plasma in the process of foil explosion, and simultaneously, hydrogen released by the hydrogen storage thin film layer and air are subjected to hydrogen explosion reaction, so that the energy output of the explosive foil is enhanced under the combined action of the hydrogen and the air, and the energy conversion efficiency of the explosive foil is improved. Therefore, under the action of the excitation energy, the hydrogen storage thin film layer and the hydrogen stored in the hydrogen storage thin film layer react at the same time to release huge energy to jointly act on the flyer material, so that the flyer has higher kinetic energy, the reliability and the stability of the foil explosion initiation system are improved, and the initiation energy and the initiation voltage of the foil explosion initiation system are effectively reduced.

Claims (5)

1. A hydrogen explosion membrane bridge with high energy output is characterized in that a substrate, a bridge area thin film layer and a protective layer are sequentially arranged on the hydrogen explosion membrane bridge from bottom to top, the bridge area thin film layer is a hydrogen storage thin film, and the hydrogen storage thin film is Ti/Mo, Ti/Fe, Ti/Ni, Mg/Al, Mg/Ni, Mg/Pd, Zr/Co or Zr.
2. The high energy output hydrogen rupture disk bridge of claim 1, wherein the substrate is a ceramic substrate, a silicon substrate or a glass substrate; the protective layer is made of Ta, Mo or Cr.
3. The high energy output hydrogen rupture disk bridge of claim 1, wherein the thickness of the hydrogen storage film is 0.1-5 μm, and the thickness of the protective layer is 0.01-5 μm.
4. A preparation method of a high-energy-output hydrogen explosion membrane bridge comprises the following steps:
step 1, forming a hydrogen storage film on a substrate by adopting a magnetron sputtering method;
step 2, forming a protective layer on the hydrogen storage film obtained in the step 1 by adopting a magnetron sputtering method;
step 3, placing the substrate with the hydrogen storage film and the protective layer obtained in the step 2 into a gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Heating the substrate to 20-1000 ℃ below Pa; introducing hydrogen into the adsorption instrument until the gas pressure reaches 0.5 kPa-5 MPa, and keeping the temperature at 20-1000 ℃ and the hydrogen pressure at 0.5 kPa-5 MPa for 0.5-100 h to enable the hydrogen storage film to absorb the hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge.
5. A preparation method of a high-energy-output hydrogen explosion membrane bridge specifically comprises the following steps:
step 1, cleaning a substrate: ultrasonically cleaning a substrate in acetone, ethanol and deionized water in sequence, and drying for later use;
step 2, depositing an MgAl film on the cleaned substrate in the step 1 by adopting a magnetron sputtering method to serve as a hydrogen storage film; wherein the sputtering pressure is 0.3-0.6 Pa, the sputtering power is 40-200W, the sputtering gas is inert gas, the sputtering time is 40-120 min, and the thickness of the obtained MgAl film is 0.1-5 μm;
step 3, depositing a Ta film on the hydrogen storage film obtained in the step 2 by adopting a magnetron sputtering method to serve as a protective layer; wherein the sputtering pressure is 0.3-0.6 Pa, the sputtering power is 40-200W, the sputtering gas is inert gas, the sputtering time is 40-120 min, and the thickness of the obtained Ta film is 0.01-5 μm;
step 4, taking out the substrate with the hydrogen storage film and the protective layer obtained in the step 3, sequentially cleaning the substrate in acetone and deionized water, and drying the substrate;
step 5, hydrogenation reaction of the hydrogen storage film: putting the dried sample in the step 4 into a gas adsorption instrument, and vacuumizing to 5 multiplied by 10-4Heating the substrate to 20-1000 ℃ below Pa; introducing hydrogen into the adsorption instrument until the gas pressure reaches 0.5 kPa-5 MPa, and keeping the temperature at 20-1000 ℃ and the hydrogen pressure at 0.5 kPa-5 MPa for 0.5-100 h to enable the hydrogen storage film to absorb the hydrogen; and finishing the preparation of the hydrogen explosion membrane bridge.
CN201811485665.0A 2018-12-06 2018-12-06 High-energy-output hydrogen explosion membrane bridge and preparation method thereof Active CN109440074B (en)

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