CN109437094A - A kind of pliable pressure sensor array and preparation method thereof - Google Patents
A kind of pliable pressure sensor array and preparation method thereof Download PDFInfo
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- CN109437094A CN109437094A CN201811269542.3A CN201811269542A CN109437094A CN 109437094 A CN109437094 A CN 109437094A CN 201811269542 A CN201811269542 A CN 201811269542A CN 109437094 A CN109437094 A CN 109437094A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/05—Arrays
- B81B2207/056—Arrays of static structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0166—Controlling internal stress of deposited layers by ion implantation
Abstract
The present invention relates to a kind of pliable pressure sensor arrays and preparation method thereof, and wherein method includes: and is patterned by photoetching and etching to silicon resistor on SOI Substrate；Grow silicon dioxide layer；Patterned silicon resistor injects boron ion under to silicon dioxide layer, and carries out heavy doping in end positions to form ohmic contact regions；Electrode window through ray is opened above the ohmic contact regions of every silicon resistor item；Sputter conductive material, preparation contact electrode and lower layer's lead；Grow Parylene dielectric layer；The region of corresponding second contact electrode prepares fairlead on Parylene dielectric layer；It sputters conductive material and prepares upper layer lead；The first polyimides clad is formed in device upper surface spin coating；It is temporarily bonded in the first polyimides clad upper surface；The buried oxide layer and substrate of SOI Substrate below removal devices；Spin coating the second polyimides clad；Upper surface is released temporarily to be bonded.The present invention uses polyimides and Parylene, guarantees flexible and bio-compatibility.
Description
Technical field
The present invention relates to sensor technical field more particularly to a kind of pliable pressure sensor array and preparation method thereof and
Component for knee joint pressure measurement.
Background technique
MEMS (Microelectro Mechanical System, MEMS) pressure sensor, usually by silicon cup,
Silicon force sensing resistance item is formed by combining, and silicon force sensing resistance item inductively measures surface pressure as pressure drag unit.It surveys
The flexible sensor array of amount pressure distribution guarantees the flexible of pressure sensor usually using polyester material as flexible substrates
Degree, to fill the conducting polymer of the materials such as carbon black, graphite or metal formation as pressure drag unit, to surface pressure into
Row inductively measures.
However, existing flexible sensor array has the disadvantage that for knee-joint prosthesis surface pressure measurement
(1) there is bio-compatibility in the sensor for being placed in knee-joint prosthesis surface, can not apply to experiment made on the living；(2) it places
Measured inside knee-joint prosthesis, using pressure drag materials such as conducting polymer etc., can hysteresis to sensor, can measure
Journey, accuracy etc. have a negative impact；(3) size limits, and the number of sensors that can be placed on knee-joint prosthesis is less, measurement
Dot density is lower, it is difficult to reach actual demand effect.(4) range limits, it is difficult to meet inside knee-joint prosthesis range Mpa with
On pressure test demand.
Summary of the invention
The technical problem to be solved by the present invention is at least part of for existing pliable pressure sensor array lacks
It falls into, a kind of pliable pressure sensor array and preparation method thereof and the component for knee joint pressure measurement is provided.
In order to solve the above-mentioned technical problems, the present invention provides a kind of preparation method of pliable pressure sensor array, packets
Include following steps:
Silicon resistor is patterned by photoetching and etching on SOI Substrate；
Silicon dioxide layer is grown on SOI Substrate after photoetching, as buffering and protective layer；
Patterned silicon resistor injects boron ion under to silicon dioxide layer, and carries out heavy doping in end positions to form silicon
The ohmic contact regions of resistor stripe；
Electrode window through ray is opened above the ohmic contact regions of every silicon resistor item by photoetching；
Sputter conductive material, on the ohmic contact regions at every silicon resistor both ends preparation contact electrode, and prepare and its
In first contact electrode connection lower layer's lead；
Parylene dielectric layer is grown to cover resistor stripe；
By lithography and etching, the region of corresponding second contact electrode prepares fairlead on Parylene dielectric layer；
Conductive material is sputtered, and prepares the upper layer lead connecting with the second contact electrode；
In device upper surface spin-on polyimide, the first polyimides clad is formed after successively solidifying by temperature gradient；
Upper surface is carried out by temporarily bonding glue on the first polyimides clad to be temporarily bonded；
The buried oxide layer and substrate of SOI Substrate below removal devices；
It is successively sub- by the second polyamides is formed in device bottom surface after temperature gradient solidification in device lower surface spin-on polyimide
Amine clad；
It releases upper surface to be temporarily bonded, obtains pliable pressure sensor array.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that described to silicon resistor
Multiple rows of silicon resistor item is defined after being patterned, the first contact electrode of every row's silicon resistor item passes through parallel upper layer busbar
It draws, the extending direction of every silicon resistor item is consistent and perpendicular to the upper layer busbar connected, and the second of every row's silicon resistor item
It contacts electrode to draw by parallel lower layer's busbar, the extending direction of lower layer's busbar is parallel to the silicon resistor item.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the preparation method
In by cutting the buried oxide layer and silicon substrate of the SOI Substrate below thin polishing process removal devices.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the preparation method
In after spin-on polyimide, successively according to following temperature gradient solidify:
First stage: solidify 10-40min at 60~90 DEG C；
Second stage: solidify 10-40min at 110~130 DEG C；
Phase III: solidify 10-40min at 150-180 DEG C；
Fourth stage: solidify 0-20min at 190~200 DEG C；
5th stage: solidify 10-40min at 210~230 DEG C；
6th stage: solidify 10-40min at 240~260 DEG C.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the SOI Substrate packet
Include pentagonal array area and rectangular lead district；It is described silicon resistor is patterned after multiple rows of silicon resistor item position for defining
In array area, and the arrangement interval of every row's silicon resistor item is equal.
In the preparation method of pliable pressure sensor array according to the present invention, it is preferable that the conductive material
For Ti/Au.
The present invention also provides a kind of pliable pressure sensor arrays, are prepared using foregoing method.Institute of the present invention
The pliable pressure sensor array stated can be used for the prosthetic surface pressure measurement of knee joint, joint of vertebral column or hip joint.
The present invention also provides a kind of components for knee joint pressure measurement, comprising:
Knee-joint prosthesis, the knee-joint prosthesis include femoral prosthesis, tibial prosthesis and are installed on the tibial prosthesis
The gasket of side, the upper surface of the gasket offers piece shape slot；
The pliable pressure sensor array of method preparation as described above, is set in the piece shape slot of the gasket.
In the component according to the present invention for knee joint pressure measurement, it is preferable that described shape slot includes: interior
Side condyle slot and external condyle slot；And the cabling channel extended respectively to two sides from entocondyle slot and external condyle slot.
Implement pliable pressure sensor array and preparation method of the invention, has the advantages that use of the present invention
The good material of the mechanical performances such as polyimides and Parylene, bio-compatibility carries out array of pressure sensors
Cladding guarantees its flexible and bio-compatibility, and accordingly provides a set of step of preparation process, can satisfy such as knee joint
The measurement request of pressure distribution.
Detailed description of the invention
Fig. 1 is the pliable pressure sensor array planar structure schematic diagram according to the preferred embodiment of the present invention；
Fig. 2 to Figure 15 is to be illustrated according to the preparation process flow of the pliable pressure sensor array of the preferred embodiment of the present invention
Figure；
Figure 16 is according to knee-joint prosthesis in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present invention
Scheme of installation；
Figure 17 is the structure chart according to gasket in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
Member's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The various structural schematic diagrams according to the embodiment of the present disclosure are shown in the attached drawings.These figures are not drawn to scale
, wherein some details are magnified for the purpose of clear expression, and some details may be omitted.It is shown in the drawings
Various regions, the shape of layer and relative size, positional relationship between them are merely exemplary, in practice may be due to system
It makes tolerance or technical restriction and is deviated, and those skilled in the art may be additionally designed as required with difference
Shape, size, the regions/layers of relative position.
In the context of the disclosure, when one layer/element is referred to as located at another layer/element "upper", which can
May exist intermediate layer/element on another layer/element or between them.In addition, if in a kind of direction
In one layer/element be located at another layer/element "upper", then when turn towards when, which can be located at another layer/member
Part "lower".
Referring to Fig. 1, for according to the pliable pressure sensor array planar structure schematic diagram of the preferred embodiment of the present invention.Please
In conjunction with refering to Fig. 2 to Figure 15, the preparation process flow for the pliable pressure sensor array according to the preferred embodiment of the present invention is shown
It is intended to.The embodiment provide pliable pressure sensor array preparation method the following steps are included:
(1) SOI Substrate is provided as shown in Figure 2, and silicon resistor is patterned by photoetching on the SOI Substrate, such as
Shown in Fig. 3.Wherein SOI Substrate includes silicon resistor layer, buried oxide layer 2 and silicon substrate 3.Silicon resistor layer forms graphically after photoetching
Silicon resistor, including more silicon resistor items 1.The single silicon resistor size of photoetching are as follows: a length of 200~1000um, width be 10~
100um, 50~500um of resistor stripe distance.Preferably, the SOI Substrate that the present invention selects includes pentagonal array area 13
With rectangular lead district 14, the multiple rows of silicon resistor item 1 defined after being patterned to silicon resistor is located at array area 13, and every row
The arrangement interval of silicon resistor item 1 is equal.Preferably, pentagonal array area 13 be rectangle unfilled corner design, with knee joint
Prosthese shape adaptation.
(2) silicon dioxide layer 4 is grown on the SOI Substrate after photoetching, as buffering and protective layer, as shown in Figure 4.
(3) boron ion is injected to silicon resistor patterned under silicon dioxide layer, and carries out heavy doping in end positions with shape
At the ohmic contact regions 5 of silicon resistor item 1, as shown in Figure 5.Ohmic contact regions 5 can reduce between metal lead wire and silicon resistor item
Contact resistance.Silicon resistor item 1 is formed by adulterating B ion, and silicon dioxide layer 4 above works as a buffer.Preferably, should
The B of silicon resistor item in step+Dopant dose is 2E13~5E14, and Implantation Energy is 50~180Kev；Silicon resistor both ends ohm
The B of contact area+Dopant dose is 2E15~5E16, and Implantation Energy is 50~180Kev；In injection B+After anneal, temperature
Degree is 800~1050 DEG C, and the time is 3h~for 24 hours, and entire annealing process uses N2Atmosphere.
(4) electrode window through ray is opened above the ohmic contact regions of every silicon resistor item 15 by photoetching, as shown in Figure 6.
(5) conductive material is sputtered, the preparation contact electrode on the ohmic contact regions 5 at every silicon resistor both ends, including the
One contact electrode 61 and the second contact electrode 62, and the lower layer's lead 63 connecting with the wherein first contact electrode 61 is prepared, such as Fig. 7
It is shown.Preferably, which is Ti/Au.Ti/Au is by titanium and gold collectively as electrode and lead material, wherein titanium
Adhesiveness between bottom, enhancing and silicon, gold is on upper layer.The thickness of Ti is aboutThe thickness of Au is then
(6) in device upper surface growth Parylene (Parylene) dielectric layer 7 to cover resistor stripe and lower layer's lead
63 etc., as shown in Figure 8.Preferably, the parylene dielectric layer 7 generated in the step with a thickness of 2~3um.
(7) by photoetching and etching, the region preparation of corresponding second contact electrode 62 is drawn on Parylene dielectric layer 7
String holes, as shown in Figure 9.
(8) conductive material is sputtered, and prepares the upper layer lead 64 connecting with the second contact electrode 62, as shown in Figure 10.It is poly-
Paraxylene dielectric layer 7 plays the role of that upper layer lead 64 and lower layer's lead 63 is isolated, while having good biocompatibility.
Above-mentioned upper layer lead 64 includes more parallel upper layer busbars, and lower layer's lead 63 includes under more parallel
Layer busbar.Correspondingly, multiple rows of silicon resistor item 1, every row's silicon resistor are defined after being patterned in abovementioned steps to silicon resistor
First contact electrode 61 of item 1 is drawn by parallel upper layer busbar, and the extending direction of every silicon resistor item is consistent and vertical
In the upper layer busbar connected.Second contact electrode 62 of every row's silicon resistor item is drawn by parallel lower layer's busbar, under
The extending direction of layer busbar is parallel to the silicon resistor item 1.Lead and lower layer's lead are arranged in parallel lead district 14 at the middle and upper levels.This
Invention is routed by ranks upper layer and lower layer, and is drawn from the same side, reduces lead footprint area, while meeting measurement demand.
(9) at device upper surface spin-on polyimide (PI), the first polyimides is formed after successively solidifying by temperature gradient
Clad 8, as shown in figure 11.
(10) it carries out upper surface by temporarily bonding glue on the first polyimides clad 8 to be temporarily bonded, as shown in figure 12.
Such as first polyimides clad 8 is adhered on the silicon backing wafer with a thickness of 400um by being temporarily bonded glue 9.
(11) buried oxide layer 2 and silicon substrate 3 of the SOI Substrate below removal devices, as shown in figure 13.Preferably, the step
In by cutting the buried oxide layer 2 and silicon substrate 3 of the SOI Substrate below thin polishing process (CMP) removal devices.
(12) successively poly- by forming second in device bottom surface after temperature gradient solidification in device lower surface spin-on polyimide
Acid imide clad 12, as shown in figure 14.
(13) it releases upper surface to be temporarily bonded, obtains pliable pressure sensor array, as shown in figure 15.
Present invention is alternatively directed to the curing process of used polyimides to be studied.Preferably, it is walked in the above method
Suddenly (9) and (12) successively solidify according to following temperature gradient after spin-on polyimide: the first stage: solid at 60~90 DEG C
Change 10-40min；Second stage: solidify 10-40min at 110~130 DEG C；Phase III: solidify 10- at 150-180 DEG C
40min；Fourth stage: solidify 0-20min at 190~200 DEG C；5th stage: solidify 10-40min at 210~230 DEG C；
6th stage: solidify 10-40min at 240~260 DEG C.From down to height, polyimides is continuously passing through above-mentioned six phase temperatures
Cross the above process can achieve solidification bond effect well later.The present invention also provides a kind of pliable pressure sensor arrays
Column are prepared using foregoing method.The pliable pressure sensor array can be used for knee joint, joint of vertebral column or hip joint
Prosthetic surface pressure measurement.
The present invention further correspondingly provides a kind of component for knee joint pressure measurement, includes at least: knee-joint prosthesis and
Foregoing pliable pressure sensor array.
Figure 16 is please referred to, for according to knee joint in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present invention
The scheme of installation of prosthese.As shown in the figure, wherein knee-joint prosthesis includes femoral prosthesis 10, tibial prosthesis 20 and gasket 30.Stock
Bone prosthese 10 is installed on 40 distal end of femur after osteotomy, lower surface form and distal femur form one individual before bone-culting operation
It causes, knee joint three-dimensional digitalization model can be established, and be based on the knee joint by the medical image data of previously-scanned individual
Three-dimensional digitalization model carries out virtual osteotomy operation, to design personalized femoral prosthesis.Tibial prosthesis 20 is otherwise known as
Shin bone metal support, 50 proximal end of shin bone after being installed on osteotomy.Tibial prosthesis 20 and gasket 30 are according to before the individual osteotomy of installation
Proximal tibia shape and design, and by carrying out the personalized prosthese designed after virtual osteotomy operation to shin bone model.Its
The configuration of surface of the femoral prosthesis 10 of the upper surface form and design of middle gasket 30 matches.Gasket 30 is installed on tibial prosthesis 30
Top, and the upper surface of gasket 30 offers piece shape slot 31.Gasket 30 preferably uses ultra high molecular polyethylene gasket.Pliable pressure
Sensor array is set in the piece shape slot 31 of gasket 30.The Zhou Jing of gasket 30 is consistent with the tibial plateau size of installation individual.
The bone surface of actual tibial platform possesses many concaveconvex structures, the form of ultra high molecular polyethylene gasket surface of the invention
It is that production is gone on the basis of sufficiently imitating original bone surface form and on the basis of prosthese stability Design.This field base
Plinth technical staff is known and can design the configuration of surface of the gasket 30, therefore is no longer repeated.
The shape of pliable pressure sensor array 100 is consistent with the piece shape groove shape of gasket 30, for example, by bioadhesive
Mode, adhere to 30 surface of gasket, realize postoperative in living animal joint replacement, the mechanics of knee joint surface prosthese is distributed
Measurement.Pliable pressure sensor array is placed on knee-joint prosthesis surface by the present invention, it is possible to reduce the interference of prosthetic material,
Improve the accuracy of measurement result.
Figure 17 is please referred to, to pad according in the knee-joint prosthesis surface pressure measurement component of the preferred embodiment of the present invention
The structure chart of piece.The upper surface of gasket 30 is consistent with the tibial plateau surfaces form of installation individual, each position in piece shape slot 31
Thickness it is equal, and the bottom surface radian of piece shape slot 31 is consistent with the radian of tibial plateau surfaces corresponding position.Piece shape slot includes: interior
Side condyle slot 311 and external condyle slot 312；And the cabling channel extended respectively to two sides from entocondyle slot 311 and external condyle slot 312
313.Entocondyle slot 311 and external condyle slot 312 are distributed in the position of corresponding shin bone protuberance two sides, and size can be according to installation
The tibial plateau size of body is adjusted.In a preferred embodiment of the invention, entocondyle slot 311 and external condyle slot 312 are in
Pentagon, this pentagon cover knee joint surface stress area preferably close to ultra high molecular polyethylene edge, the face of each slot
Product is 70mm2 or so, i.e., the length of maximum long side is about 12mm, and front and back bottom edge is respectively 4mm, 7mm.The thickness of the piece shape slot 31
Preferred 200um is spent, on the basis of guaranteeing that the tough band width of sensor array sensibility and its covering material requires, is utmostly protected
The integrality of the structure of original ultra high molecular polyethylene gasket has been held, is provided for detection knee-joint prosthesis surface biological mechanics most true
Real reliable data result.Although give piece shape slot 31 in the embodiment specifically opens up form, this field basis skill
Art personnel, which can according to need, to be adjusted.The present invention not only combines PI, parylene material with SOI, is prepared by PI
And the heavy doping monocrystalline silicon resistance strip array of parylene layers of cladding, according further to the requirement of knee joint pressure test, to its battle array
Column distribution, shape etc. have been carried out for design；It is advantageous that can match very well with knee joint measurement environment, has life
Object compatibility, possesses certain application prospect in experiment made on the living.
The knee joint that pliable pressure sensor array of the invention can lead to experimental subjects by lead is subcutaneous, and ties up
It is scheduled on FPC circuit board, single-chip microcontroller and wireless communication module outside knee joint to be connected, and signal is exported to the end PC, into
Row is as the result is shown.The silicon force sensing resistance item of heavy doping is when by extraneous pressure in pliable pressure sensor array of the invention
Deformation can be generated, internal stress will lead to resistivity and change, and so as to cause the change in resistance of silicon force sensing resistance item, pass through survey
The change in resistance for measuring silicon force sensing resistance strip array can obtain extraneous pressure distribution.Therefore, when femur applies pressure to knee
When articular prosthesis surface, pliable pressure sensor array senses that ambient pressure changes, and generates corresponding signal, utilizes single-chip microcontroller
The data signal acquisition process of pliable pressure sensor array is controlled, and signal collected is passed by FPC circuit board
It is defeated.Signal, using wireless communication module, transmits a signal to the progress of the end PC after through being further processed of one-chip computer module
It collects and intuitive display.
In conclusion can be transported the present invention provides a kind of pliable pressure sensor array and using the component of the array
For in experiment made on the living, measuring for example personalized knee-joint prosthesis surface pressure distribution.Wherein using PI (polyimides) and
The good material of mechanical performances, the bio-compatibilities such as Parylene (Parylene), wraps array of pressure sensors
It covers, guarantees its flexible and bio-compatibility, meet experiment made on the living condition.And the present invention utilizes MEMS processing technology, passes through
SOI piece is prepared into the monocrystalline silicon force sensing resistance strip array of heavy doping, measured to pressure by certain process.With it is existing
Technology is compared, and in order to meet the measurement request of knee joint pressure distribution, there is different lithography layouts, techniques to walk by the present invention
Suddenly, parameter and rapidoprint etc..Due to conducting polymer, polyester material Young's modulus much smaller than monocrystalline silicon resistor stripe with
And PI material, so when in face of external larger pressure on an equal basis, the deformation quantity meeting of pliable pressure sensor array of the invention
Smaller, opposite hysteresis and measurable process performance can be more preferable, and furthermore its piezoresistance coefficient of the monocrystalline silicon resistor stripe of heavy doping is big, electricity
Resistance changing value is obvious, and accuracy also can be higher.Therefore, sensor of the invention is small in size, and long service life, measurable process is big,
Measurement area, density are big, and the performances such as hysteresis are more preferable.Above-mentioned pliable pressure sensor array and use of the invention should
The size of the component of array is suitable for animal Beagle dog knee joint, and when being applied to different organisms, size can be according to need
It designs.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of preparation method of pliable pressure sensor array, which comprises the following steps:
Silicon resistor is patterned by photoetching and etching on SOI Substrate；
Silicon dioxide layer is grown on SOI Substrate after photoetching, as buffering and protective layer；
Patterned silicon resistor injects boron ion under to silicon dioxide layer, and carries out heavy doping in end positions to form silicon resistor
The ohmic contact regions of item；
Electrode window through ray is opened above the ohmic contact regions of every silicon resistor item by photoetching；
Conductive material is sputtered, the preparation contact electrode on the ohmic contact regions at every silicon resistor both ends, and prepare and wherein the
Lower layer's lead of one contact electrode connection；
Parylene dielectric layer is grown to cover resistor stripe；
By lithography and etching, the region of corresponding second contact electrode prepares fairlead on Parylene dielectric layer；
Conductive material is sputtered, and prepares the upper layer lead connecting with the second contact electrode；
In device upper surface spin-on polyimide, the first polyimides clad is formed after successively solidifying by temperature gradient；
Upper surface is carried out by temporarily bonding glue on the first polyimides clad to be temporarily bonded；
The buried oxide layer and substrate of SOI Substrate below removal devices；
In device lower surface spin-on polyimide, the second polyimides packet successively is formed in device bottom surface by after temperature gradient solidification
Coating；
It releases upper surface to be temporarily bonded, obtains pliable pressure sensor array.
2. the preparation method of pliable pressure sensor array according to claim 1, which is characterized in that described to silicon resistor
Multiple rows of silicon resistor item is defined after being patterned, the first contact electrode of every row's silicon resistor item passes through parallel upper layer busbar
It draws, the extending direction of every silicon resistor item is consistent and perpendicular to the upper layer busbar connected, and the second of every row's silicon resistor item
It contacts electrode to draw by parallel lower layer's busbar, the extending direction of lower layer's busbar is parallel to the silicon resistor item.
3. the preparation method of pliable pressure sensor array according to claim 1, which is characterized in that the preparation method
In by cutting the buried oxide layer and silicon substrate of the SOI Substrate below thin polishing process removal devices.
4. the preparation method of pliable pressure sensor array according to claim 1, which is characterized in that the preparation method
In after spin-on polyimide, successively according to following temperature gradient solidify:
First stage: solidify 10-40min at 60~90 DEG C；
Second stage: solidify 10-40min at 110~130 DEG C；
Phase III: solidify 10-40min at 150-180 DEG C；
Fourth stage: solidify 0-20min at 190~200 DEG C；
5th stage: solidify 10-40min at 210~230 DEG C；
6th stage: solidify 10-40min at 240~260 DEG C.
5. the preparation method of pliable pressure sensor array according to claim 1, which is characterized in that the SOI Substrate
Including pentagonal array area and rectangular lead district；It is described silicon resistor is patterned after multiple rows of silicon resistor item for defining
Positioned at array area, and the arrangement interval of every row's silicon resistor item is equal.
6. the preparation method of pliable pressure sensor array according to claim 1, which is characterized in that the conductive material
For Ti/Au.
7. a kind of pliable pressure sensor array, which is characterized in that use method system of any of claims 1-6
It is standby.
8. pliable pressure sensor array according to claim 7, which is characterized in that for knee joint, joint of vertebral column or
The prosthetic surface pressure measurement of hip joint.
9. a kind of component for knee joint pressure measurement characterized by comprising
Knee-joint prosthesis, the knee-joint prosthesis include femoral prosthesis, tibial prosthesis and are installed on above the tibial prosthesis
Gasket, the upper surface of the gasket offer piece shape slot；
The pliable pressure sensor array of method preparation according to claim 1 to 6, is set to the gasket
Piece shape slot in.
10. the component according to claim 9 for knee joint pressure measurement, which is characterized in that described shape slot include:
Entocondyle slot and external condyle slot；And the cabling channel extended respectively to two sides from entocondyle slot and external condyle slot.
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