CN109412548A - A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure - Google Patents
A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure Download PDFInfo
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- CN109412548A CN109412548A CN201811516164.4A CN201811516164A CN109412548A CN 109412548 A CN109412548 A CN 109412548A CN 201811516164 A CN201811516164 A CN 201811516164A CN 109412548 A CN109412548 A CN 109412548A
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- 239000000463 material Substances 0.000 claims abstract description 52
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 33
- 230000005284 excitation Effects 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims description 24
- 229910003460 diamond Inorganic materials 0.000 claims description 24
- 238000003466 welding Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 15
- 238000003780 insertion Methods 0.000 abstract description 5
- 230000037431 insertion Effects 0.000 abstract description 5
- 238000004891 communication Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000012010 growth Effects 0.000 description 6
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- 238000000034 method Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002305 electric material Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 241001282153 Scopelogadus mizolepis Species 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
Abstract
The invention discloses a kind of new type of SAW or shear wave to motivate bulk acoustic wave microwave device chip structure, the chip structure includes: surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body, the first groove and the second groove are provided in chip basal body, the first piezoelectric material is filled in first groove, first electrode is provided on first piezoelectric material, one end of first electrode is connected with the first piezoelectric material, and the other end is connected with the signal input part of chip circuit；It is filled with the second piezoelectric material in second groove, is provided with second electrode on the second piezoelectric material, one end of second electrode is connected with the second piezoelectric material, and the other end is connected with the signal output end of chip circuit.A kind of new type of SAW or shear wave provided by the invention motivate bulk acoustic wave microwave device chip structure, reduce the transmission loss and microwave insertion loss of device, improve the performances such as frequency and the quality factor of device.
Description
Technical field
The present invention relates to microwave communication equipment technical fields, motivate body more particularly to a kind of new type of SAW or shear wave
Sound wave microwave device chip structure.
Background technique
Surface acoustic wave (SAW) and bulk acoustic wave device (FBAR) all play in various communication equipments, system, terminal to Guan Chong
The effect wanted, technical indicator and characteristic are the key that communication equipment performances.If wherein the sonic transmissions loss of material can be shown
Writing reduces, and has significant increase for the anti-interference ability and power consumption of communication equipment.Do not changing existing surface acoustic wave and body sound
In the case that wave device designs, realize that transmission loss is greatly reduced for modern communications equipment to Guan Chong by new diseases
It wants.The frequency spectrum resource being becoming tight day now, device miniaturization, highly integrated, low in energy consumption, the technologies such as small of generating heat demand are also more next
It is more urgent, in surface acoustic wave and bulk acoustic wave device use various new materials, diamond especially therein increasingly by
Pay attention to.
Diamond longitudinal wave velocity is up to 18000m/s, highest in existing nature and synthetic material, relatively common pressure
Electric material is 3-10 times high, and the surface acoustic wave and bulk acoustic wave device of preparation have high quality factor (Q value).Surface acoustic wave and body
Sound wave microwave device has been used for various high-frequency high-power communication equipments, system and terminal, such as delay line, resonator, filtering
Device, acousto-optic modulator, acoustooptic switch.However surface acoustic wave and bulk acoustic wave device use Common piezoelectricity materials to transmit base mostly
Body, sound transmission loss is serious, and response frequency is restricted by the low acoustic propagation velocity of piezoelectric material.And it develops using diamond
Surface acoustic wave and bulk acoustic wave device can further improve the anti-interference ability of communication equipment, reduce power consumption, improve response frequency,
To improve the comprehensive performance of communication equipment.
Traditional surface acoustic wave and bulk acoustic wave device are mainly made of piezoelectric membrane, electrode, wherein electrode passes through tradition collection
At circuit technology on piezoelectric membrane by film deposition, photoetching, etch.Signal is input in a lateral electrode, through piezoelectricity
Material converts acoustic signals for microwave signal and transmits in piezoelectric membrane, then passes through inverse piezoelectric effect in another lateral electrode
Microwave signal output is converted by acoustic signals.By piezoelectric membrane appropriate and electrode design, it can make to meet specific frequency and want
The acoustic signals asked pass through, and realize resonance, filter function.Although traditional surface acoustic wave and bulk acoustic wave device can also realize that microwave is filtered
Wave energy, but have a disadvantage that needs overcome:
1, Conventional piezoelectric material sound wave loss it is larger, the sensitivity of the surface acoustic wave and bulk acoustic wave device that are made from it and
Anti-interference ability is substantially reduced.
2, using diamond/piezoelectricity/electrode multilayer structure of diamond, acoustic signals are still mainly in piezoelectric layer
It propagates, still larger, the effect of diamond performance not yet in effect is lost in sonic transmissions.
Summary of the invention
Deficiency in view of the above technology, the object of the present invention is to provide a kind of new type of SAW or shear wave to motivate bulk acoustic wave
Microwave device chip structure reduces transmission loss and microwave insertion loss, improves the performances such as frequency and the quality factor of device.
To achieve the above object, the present invention provides following schemes:
A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure, which includes: sound table
Surface wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body；
It is provided with the first groove and the second groove in the chip basal body, is filled with the first piezoresistive material in first groove
To expect, be provided with first electrode on first piezoelectric material, one end of the first electrode is connected with first piezoelectric material,
The other end of the first electrode is connected with the signal input part of the chip circuit；
It is filled with the second piezoelectric material in second groove, is provided with second electrode on second piezoelectric material, institute
The one end for stating second electrode is connected with second piezoelectric material, the letter of the other end of the second electrode and the chip circuit
Number output end is connected.
Optionally, the chip basal body material is the silicon materials of diamond or depositing diamond film.
Optionally, first groove and second groove contain multiple grooves.
Optionally, the distance between each groove is identical or different.
Optionally, the shape, size and/or depth of the groove can change.
Optionally, the shape and/or size of the first electrode and the second electrode can adjust.
Optionally, the first electrode and the second electrode are all made of conductive metal.
Optionally, the chip basal body is arranged with substrate, is used to support the chip structure.
Optionally, the first electrode is input electrode, takes spot welding lead packages, and the second electrode is output electricity
Spot welding lead packages are taken in pole.
The specific embodiment provided according to the present invention, the invention discloses following technical effects:
The invention proposes a kind of new type of SAW or shear wave to motivate bulk acoustic wave microwave device chip structure, the chip knot
Structure includes: surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body, and the is provided in chip basal body
One groove and the second groove, the first groove is interior to be filled with the first piezoelectric material, is provided with first electrode on the first piezoelectric material, the
One end of one electrode is connected with the first piezoelectric material, and the other end is connected with the signal input part of chip circuit；It is filled out in second groove
Filled with the second piezoelectric material, second electrode, one end of second electrode and the second piezoelectric material phase are provided on the second piezoelectric material
Even, the other end is connected with the signal output end of chip circuit.The present invention is by using the diamond of groove structure as master
The sonic transmissions medium wanted reduces device to greatest extent using the highest acoustic propagation velocity of diamond and minimum acoustic loss performance
The transmission loss and microwave insertion loss of part, improve the performances such as frequency and the quality factor of device.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is that a kind of new type of SAW of the embodiment of the present invention or shear wave motivate bulk acoustic wave microwave device chip structure section
Schematic diagram；
Fig. 2 is microwave device schematic illustration in the embodiment of the present invention；
Fig. 3 is microwave device performance chart in the embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of new type of SAW or shear wave to motivate bulk acoustic wave microwave device chip structure, drop
The low transmission loss and microwave insertion loss of device, improves the performances such as frequency and the quality factor of device.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
As shown in Figure 1, a kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure diagrammatic cross-section,
The chip structure includes: surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body 101, the chip
It is provided with the first groove 102 and the second groove 103 on matrix 101, is filled with the first piezoelectric material in first groove 102
104, first electrode 106, one end of the first electrode 106 and first pressure are provided on first piezoelectric material 104
Electric material 104 is connected, and the other end of the first electrode 106 is connected with the signal input part of the chip circuit；Described second
It is filled with the second piezoelectric material 105 in groove 103, is provided with second electrode 107 on second piezoelectric material 105, described the
One end of two electrodes 107 is connected with second piezoelectric material 105, the other end of the second electrode 107 and chip electricity
The signal output end on road is connected.
In the present embodiment, 101 material of chip basal body is the silicon materials group of diamond or depositing diamond film
At the single basis material in surface acoustic wave and bulk acoustic wave device, 101 material of chip basal body be not limited to it is above two, also
The other materials that can be depositing diamond film make diamond as main sonic transmissions medium, reduce device
Transmission loss and microwave insertion loss, improve the performances such as frequency and the quality factor of device.
In the present embodiment, first groove 102 and second groove 103 contain multiple grooves, each groove
It is filled with piezoelectric material, and corresponding electrode is set on the piezoelectric materials.
As an alternative embodiment, the distance between each groove is identical or different, the shape of the groove
Shape, size and/or depth can change, and the shape and/or size of the first electrode 106 and the second electrode 107 can
Adjustment.By adjusting above one or more, response of the device to microwave spectrums such as different frequency, bandwidth can be realized, it is real
The various functions of existing microwave device.
As an alternative embodiment, the first electrode 106 and the second electrode 107 are all made of conductive gold
Belong to.
As an alternative embodiment, the chip basal body 101 is arranged with substrate, it is used to support the chip knot
Structure.
As an alternative embodiment, the first electrode 106 is input electrode, spot welding lead packages, institute are taken
Stating second electrode 107 is output electrode, takes spot welding lead packages, and the encapsulation of input and output electrode is not limited to a solder taul envelope
Dress can also draw microwave input and output electrode by other way, various microwave devices are made.
A kind of new type of SAW or shear wave provided in this embodiment excitation bulk acoustic wave microwave device chip structure, it can be achieved that
The function of conventional surface acoustic wave and bulk acoustic wave device meets the requirement for realizing microwave-sound wave conversion, microwave signal selection, also real
Highly sensitive and low loss is showed.And various groove shapes, piezoelectric material and electrode material are designed as needed, according to need
Ask modification design, have the characteristics that technical indicator it is excellent, it is flexible and expansible, using simplicity.The corresponding technique of this structure and big
Scale integrated circuit compatibility is compatible with the use of existing device, it can be achieved that batch production, can be applied to a variety of communication equipments.
Using diamond as matrix in the present embodiment, realizing has the diamond of excellent sound transmission characteristics
As surface acoustic wave and the prevailing transmission medium of bulk acoustic wave device, transmission loss is greatly reduced, improves device performance, which can
Standard technology is prepared with large scale integrated circuit, it can be achieved that large-scale production.
The function of each component of the present embodiment and corresponding description of the process are as follows:
1. diamond: diamond is using monocrystalline or the high-purity rank diamond platelet of polycrystalline or film, length, width and height
Size can be customized, typical sizes be 3*3*0.3mm (platelet, self-supporting) or 0.03mm (film, using other materials as matrix), it is miscellaneous
Matter N content is PPB rank, upper and lower surface roughness Ra < 10nm.It is provided for surface acoustic wave or bulk acoustic wave microwave device optimal
Acoustic Wave Propagation medium.
2. groove structure: using traditional surface acoustic wave interdigital electrode shape in the present embodiment, interdigital groove utilizes tradition half
Semiconductor process is completed by photoetching, dry etching, and about 5 microns of depth of groove, ditch profile is inverted trapezoidal.
3. piezoelectric material: it is piezoelectric material that ALN is selected in the present embodiment, can also deposit other piezoelectric materials, piezoelectric material
About film thickness is advisable with being filled up completely groove and diamond surface, passes through physical vapour deposition (PVD), chemical vapor deposition, plating
Mode or other growth patterns are capable of the growth thickness and growth quality of stability contorting piezoelectric membrane.After the completion of growth, biography is utilized
Semiconductor technology of uniting is by chemically-mechanicapolish polishing (CMP), the piezoelectric material of the non-recessed site deposition of jettisoning diamond surface, thus
Basic circuit is formed by groove.
4. circuit-forming and encapsulation: it is electrode that Al-Cu is selected in the present embodiment, can also deposit other electrode materials.Electrode
Thickness, which is subject to, to be designed, and generally about 2 microns, by physical vapour deposition (PVD), plating mode or other growth patterns, can stablize control
The growth thickness and growth quality of electrode film processed, after the completion of growth, using conventional semiconductor processing by photoetching, dry etching, only
Retain electrode on the piezoelectric materials, to form electrode.Physical circuit can be defeated according to practical devices mode and frequency self-defining
Entering output electrode can be drawn by spot welding extraction, encapsulation or other means.
It, can by adjusting piezoelectricity/electrode material composition, the geomery of groove and depth of groove, electrode shape size
Form the surface acoustic wave and bulk acoustic wave device of different mode and frequency.
5. microwave device performance curve
Using common microwave designing, simulation softward and microwave test instrument, to surface acoustic wave in the present embodiment and bulk acoustic wave
Device is simulated and is tested, and Fig. 3 is microwave device performance chart in embodiment, as shown in figure 3, centre frequency is
1.75GHz, bandwidth 0.05GHz.
The S21 (transmission coefficient) of filter is shown in positive " n " shape curve, and microwave is transmitted to the electricity of output end from input terminal
Pressure ratio value shows that microwave signal can pass completely through, is lower than close to 0dB (logarithmic mode, ratio 1) near intermediate 1.75GHz
Or it is remarkably decreased higher than the microwave signal S21 of band connection frequency to -50dB and following, hence it is evident that inhibit, show that microwave signal can not lead to
It crosses.
The S11 (self-reflection coefficient) of filter is shown in " n " shape curve, there is more fluctuating in passband, and microwave is from defeated
Enter the voltage ratio that end input back reflection returns input terminal, maximum value is less than -10dB in passband, shows in passband almost without letter
Number reflex to input terminal；Microwave signal S11 below or above band connection frequency is 0 (logarithmic mode, ratio 1), shows signal
All it is reflected back input terminal.
The principle of microwave device in the present embodiment:
Fig. 2 is microwave device of embodiment of the present invention schematic illustration, as shown in Fig. 2, microwave signal passes through input IDT
To the piezoelectric material under electrode, the sound of corresponding frequencies has been motivated by inverse piezoelectric effect for (input piezoelectricity/telegraph circuit) 201 conduction
Surface wave (SAW), width corresponds to corresponding resonance frequency between certain recess width and each groove, several pairs of same widths it is recessed
Resonance can be formed between the corresponding electrode of slot, input IDT (input piezoelectricity/telegraph circuit) 201 generates fixed frequency surface acoustic wave,
It is transmitted to output IDT (output piezoelectricity/telegraph circuit) 202 by diamond, by piezoelectric effect, only this frequency
Sound wave can be realized resonance and motivated the electromagnetic wave of corresponding frequencies, and pass through output IDT (output piezoelectricity/electrode electricity
Road) 202 this electromagnetic wave is exported, to realize microwave filtering.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (9)
1. a kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure, which is characterized in that the chip knot
Structure includes: surface acoustic wave or shear wave excitation bulk acoustic wave microwave device chip circuit and chip basal body；
It is provided with the first groove and the second groove in the chip basal body, is filled with the first piezoelectric material in first groove,
First electrode is provided on first piezoelectric material, one end of the first electrode is connected with first piezoelectric material, institute
The other end for stating first electrode is connected with the signal input part of the chip circuit；
It is filled with the second piezoelectric material in second groove, is provided with second electrode on second piezoelectric material, described the
One end of two electrodes is connected with second piezoelectric material, and the signal of the other end of the second electrode and the chip circuit is defeated
Outlet is connected.
2. new type of SAW according to claim 1 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, the chip basal body material is the silicon materials of diamond or depositing diamond film.
3. new type of SAW according to claim 1 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, first groove and second groove contain multiple grooves.
4. new type of SAW according to claim 3 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, the distance between each groove is identical or different.
5. new type of SAW according to claim 4 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, shape, size and/or the depth of the groove can change.
6. new type of SAW according to claim 1 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, the shape and/or size of the first electrode and the second electrode can adjust.
7. new type of SAW according to claim 1 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, the first electrode and the second electrode are all made of conductive metal.
8. new type of SAW according to claim 1 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, the chip basal body is arranged with substrate, is used to support the chip structure.
9. new type of SAW according to claim 1 or shear wave motivate bulk acoustic wave microwave device chip structure, feature
It is, the first electrode is input electrode, takes spot welding lead packages, and the second electrode is output electrode, takes spot welding
Lead packages.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111082772A (en) * | 2019-12-12 | 2020-04-28 | 广东工业大学 | Bulk acoustic wave filter based on magnetostrictive effect and manufacturing method thereof |
| CN111162754A (en) * | 2019-12-12 | 2020-05-15 | 广东工业大学 | Magnetostrictive acoustic wave filter packaging structure and manufacturing method thereof |
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| US20120062329A1 (en) * | 2010-09-09 | 2012-03-15 | Seiko Epson Corporation | Surface acoustic wave device, electronic apparatus, and sensor apparatus |
| US20170085246A1 (en) * | 2015-09-17 | 2017-03-23 | Ishiang Shih | Tunable surface acoustic wave resonators and filters |
| US20180219525A1 (en) * | 2017-01-30 | 2018-08-02 | Zhuohui Chen | Surface acoustic wave device |
| CN108447884A (en) * | 2017-02-16 | 2018-08-24 | 株式会社Befs | Piezoelectric transducer manufacturing method and utilize its piezoelectric transducer |
| CN209017001U (en) * | 2018-12-12 | 2019-06-21 | 中国科学院电工研究所 | A kind of new type of SAW or shear wave motivate bulk acoustic wave microwave device chip structure |
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2018
- 2018-12-12 CN CN201811516164.4A patent/CN109412548A/en active Pending
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|---|---|---|---|---|
| US5221870A (en) * | 1991-09-30 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Surface acoustic wave device |
| CN1645744A (en) * | 2004-12-07 | 2005-07-27 | 清华大学 | Production for multi-layer thin-film structure of diamond sound surface wave device |
| US20120062329A1 (en) * | 2010-09-09 | 2012-03-15 | Seiko Epson Corporation | Surface acoustic wave device, electronic apparatus, and sensor apparatus |
| US20170085246A1 (en) * | 2015-09-17 | 2017-03-23 | Ishiang Shih | Tunable surface acoustic wave resonators and filters |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111082772A (en) * | 2019-12-12 | 2020-04-28 | 广东工业大学 | Bulk acoustic wave filter based on magnetostrictive effect and manufacturing method thereof |
| CN111162754A (en) * | 2019-12-12 | 2020-05-15 | 广东工业大学 | Magnetostrictive acoustic wave filter packaging structure and manufacturing method thereof |
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