CN109412017A - A kind of VCSEL laser device - Google Patents
A kind of VCSEL laser device Download PDFInfo
- Publication number
- CN109412017A CN109412017A CN201811275652.0A CN201811275652A CN109412017A CN 109412017 A CN109412017 A CN 109412017A CN 201811275652 A CN201811275652 A CN 201811275652A CN 109412017 A CN109412017 A CN 109412017A
- Authority
- CN
- China
- Prior art keywords
- vcsel
- chip
- lead wire
- metal lead
- wire frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 14
- 238000000465 moulding Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000011256 inorganic filler Substances 0.000 claims description 2
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 239000006229 carbon black Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000002366 time-of-flight method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention provides a kind of VCSEL laser device, using metal lead wire frame and uses the molding Step-edge Junction component of thermosetting resin as carrier bracket, provides an at least VCSEL chip, and at least one set of optical lens mould group comprising diffraction optical element；Hot-press solidifying is carried out using thermosetting resin on metal lead wire frame and forms step structure part, Step-edge Junction component is equipped at least one step structure, VCSEL chip is fixed on the metal lead wire frame of carrier bracket, it is interconnected using conducting wire and metal lead wire frame, the optical lens mould group comprising diffraction optical element is embedded on the step structure of Step-edge Junction component.VCSEL laser device provided by the invention has both the advantage of economic, reliable, efficient volume production.
Description
Technical field
The invention belongs to optoelectronic semiconductor technical fields, are related to a kind of VCSEL laser device, are related to vertical cavity surface and swash
The encapsulation of optical transmitting set.
Background technique
3D is imaged on physical identification, action recognition, scene Recognition etc. with huge application potential.3D imaging can be with
The range information with camera of records photographing target object, to obtain the three-dimensional coordinate information of photographic subjects object.Pass through
The Modeling Calculation of static state or dynamic 3 D coordinate information to photographic subjects object, it can be achieved that physical identification, action recognition, with
And scene Recognition.
At present there are three types of the 3D imaging techniques of mainstream: first is that binocular stereo vision (Binocular Stereo Vision),
It is imaged simultaneously by two video cameras separated by a distance to target object, calculates the position between two images corresponding points
Deviation obtains the three-dimensional information of object；Second is that light time-of-flight method (Time of Flight, TOF), i.e., emit to target object
By the laser of phase-modulation, the phase deviation of imaging sensor exploring laser light calculates to obtain flight round-trip time difference, Ke Yiji
Calculate accurate distance between target object and camera and modeling calculate object 3D information；Third is that Structure light method
(StructureLight), i.e., infrared laser issue specific wavelength hot spot matrix, be incident upon on target object, hot spot matrix
It is distorted with the structure of target object surface, imaging sensor detects the distortion distributed intelligence of hot spot matrix, then passes through spy
Fixed algorithm obtains position and the 3D information of target object.
TOF and structure light require the laser that active laser light source issues specific wavelength.VCSEL(Vertical Cavity
Surface Emitting Laser) vertical cavity surface lase device, abbreviation surface emitting laser device, have it is small in size,
The advantage that reaction speed is fast, energy efficiency is high, especially suitable for TOF and structured light light source.The structure light of high power density at present
The packaged type of device VCSEL, mainly expensive ceramic substrate encapsulation.VCSEL needs a kind of economical, reliable, efficient
The packaged type of volume production efficiency, it is universal to promote VCSEL to apply, promote the extensive use of 3D imaging technique.
Summary of the invention
The object of the present invention is to provide a kind of VCSEL laser device, the encapsulation of the laser device has both economical, reliable, high
The advantage of volume production efficiency.The laser device includes at least a VCSEL chip, is formed by metal lead wire frame and thermosetting resin
Step-edge Junction component constitute carrier bracket, the optical lens mould group comprising diffraction optical element.Specifically:
It using metal lead wire frame and uses the molding Step-edge Junction component of thermosetting resin as carrier bracket, provides at least one
VCSEL chip, and at least one set of optical lens mould group comprising diffraction optical element；Thermosetting property is used on metal lead wire frame
Resin carries out hot-press solidifying and forms step structure part, and Step-edge Junction component is equipped at least one step structure, and VCSEL chip is fixed on
On the metal lead wire frame of carrier bracket, interconnected using conducting wire and metal lead wire frame, the optical lens comprising diffraction optical element
Mirror mould group is embedded on the step structure of Step-edge Junction component.
The metal lead wire frame that carrier bracket uses specifically is schemed by precision die punching press or chemical method for etching
Shape, the metal lead wire frame thickness that draws is between 0.1nm and 1mm.
The thermosetting resin that carrier bracket uses, including at least having silica, titanium dioxide, zinc oxide, aluminium oxide, carbon
One of black inorganic filler；The color of thermosetting resin is black or white；Using the mode of mould heat pressure in the gold
Belong to curing molding on lead frame.
VCSEL chip using at least two beam array laser light beams chip, and the wavelength of laser 600nmm with
Between 1600nm.
The diffraction optical element for including in optical lens mould group should be able to spread out the laser beam that the VCSEL chip issues
It penetrates, and the laser beam number that diffraction goes out, the number of light beams of the no less than described VCSEL chip.
Optionally, in addition, in the horizontal direction of the VCSEL chip, semiconductor is welded on metal lead wire frame
Chip, semiconductor chip include one or both of driving chip or sensitive chip, may be implemented VCSEL chip driving or
Sensitization function is integrated.
Detailed description of the invention:
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described.The attached drawing is a part of the embodiments of the present invention, rather than whole embodiments, this field
Technical staff without creative efforts, can also be obtained according to these attached drawings other design schemes and attached
Figure, belongs within scope of the embodiment of the present invention.
Fig. 1 is the structural schematic diagram of the VCSEL laser in embodiment.
Label declaration: 1, metal lead wire frame；2, Step-edge Junction component；21, step structure；3, VCSEL chip；4, semiconductor
Chip；5, optical lens mould group；6, conducting wire.
Specific embodiment
It is carried out below with reference to technical effect of the embodiment and attached drawing to design of the invention, specific structure and generation clear
Chu, complete description, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described specific embodiment is
A part of the embodiments of the present invention, rather than whole embodiments, based on the embodiment of the present invention, those skilled in the art is not
Other embodiments obtained, all belong to the scope of protection of the present invention under the premise of making the creative labor.In the invention
Various technical characteristics, can be with combination of interactions under the premise of not conflicting conflict.
As shown in Figure 1, the present embodiment is a kind of VCSEL laser, including carrier bracket, VCSEL chip, one and half
Body chip and one group include the optical lens mould group of diffraction optical element, the carrier bracket include metal lead wire frame in gold
Belong to and the molding Step-edge Junction component of hot-press solidifying is carried out using thermosetting resin on lead frame, VCSEL chip is fixed on carrier branch
On the metal lead wire frame of frame, and VCSEL chip is interconnected using conducting wire and metal lead wire frame, and optical lens mould group is inlayed solid
Due on Step-edge Junction component.
It is the VCSEL laser fabrication process in the present embodiment below:
Step 1: being made on one piece of metal sheet using the method for chemical etching or precision die punching press for solid
Determine VCSEL chip, driving chip, sensitive chip and the metal lead wire frame of conducting wire connection, each metal lead wire frame it is outer
Shape can be various shape, such as round, rectangular or star.Make metal lead wire frame metal sheet be it is gold-plated or silver-plated or
The copper material of nickel plating Polarium.
Step 2: forming thermosetting resin on each metal lead wire frame using the method for mould heat pressure, one is formed
Step-edge Junction component；Special step structure is designed on mold, and molding thermosetting resin is made to form at least one step structure.Thermosetting
Property resin be epoxy resin, epoxy resin is black.
Step 3: on the pad of each metal lead wire frame, fixed VCSEL chip and semiconductor chip, fixed chip
Method be elargol die bond, tin cream die bond, scaling powder die bond, solder die bond or chip bottom coat of metal hot pressing eutectic.
Step 4: VCSEL chip and semiconductor chip conducting wire and metal lead wire frame are interconnected according to chip demand.
Conducting wire is the gold thread that line footpath is 0.8mil to 1mil.
Step 5: the optical lens mould group comprising diffraction optical element is adhered to Step-edge Junction component using adhesive
On step structure, adhesive is transparent silica gel.
Step 6: being separated into the single VCSEL laser with standalone feature with the mode of cutting or punching press.
The preferred embodiment of invention is illustrated above, but the invention is not limit to the described embodiment,
Those skilled in the art can also make many kinds of equivalent modifications or replacement on the premise of without prejudice to spirit of the invention, this
Equivalent variation or replacement are all contained in the claim of this application limited range a bit.
Claims (7)
1. a kind of VCSEL laser device, which is characterized in that including carrier bracket, an at least VCSEL chip and at least one set of packet
Optical lens mould group containing diffraction optical element, the carrier bracket include that metal lead wire frame is adopted on metal lead wire frame
The molding Step-edge Junction component of hot-press solidifying is carried out with thermosetting resin, VCSEL chip is fixed on the die-attach area of carrier bracket
On frame, and VCSEL chip is interconnected using conducting wire and metal lead wire frame, and optical lens mould group, which is inlayed, is fixed on Step-edge Junction component
On.
2. VCSEL laser device according to claim 1, which is characterized in that the metal lead wire frame of the carrier bracket,
Obtain specific figure by precision die punching press or chemical method for etching, the metal lead wire frame thickness 0.1mm and 1mm it
Between.
3. VCSEL laser device according to claim 1, which is characterized in that the thermosetting resin, which includes at least, two
Silica, titanium dioxide, zinc oxide, aluminium oxide, any one inorganic filler in carbon black；The color of thermosetting resin is black
Or white；Using the mode of mould heat pressure on the metal lead wire frame curing molding.
4. VCSEL laser device according to claim 1, which is characterized in that the Step-edge Junction component is equipped at least one
Step structure is adhesively fixed the optical lens mould group on step structure using adhesive.
5. VCSEL laser device according to claim 1, which is characterized in that the VCSEL chip is at least two beam battle arrays
The chip of column laser beam emits the wavelength of laser between 600nm and 1600nm.
6. VCSEL laser device according to claim 1, which is characterized in that include in the optical lens mould group spreads out
The laser beam diffraction that optical element issues the VCSEL chip, and the laser beam number that diffraction goes out are penetrated, it is no less than described
The number of light beams of VCSEL chip.
7. VCSEL laser device according to claim 1, which is characterized in that in the horizontal direction of the VCSEL chip,
Semiconductor chip is welded on metal lead wire frame, semiconductor chip includes one of driving chip or sensitive chip or two
Kind.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811275652.0A CN109412017A (en) | 2018-10-30 | 2018-10-30 | A kind of VCSEL laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811275652.0A CN109412017A (en) | 2018-10-30 | 2018-10-30 | A kind of VCSEL laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109412017A true CN109412017A (en) | 2019-03-01 |
Family
ID=65469780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811275652.0A Pending CN109412017A (en) | 2018-10-30 | 2018-10-30 | A kind of VCSEL laser device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109412017A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7265439B1 (en) * | 1999-11-30 | 2007-09-04 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Low cost, high speed, high efficiency infrared transceiver |
| CN103676157A (en) * | 2012-09-14 | 2014-03-26 | 任正明 | Laser module of point light source |
| CN105765743A (en) * | 2013-11-29 | 2016-07-13 | 奥斯兰姆奥普托半导体股份有限两合公司 | Optoelectronic component and method for the production thereof |
| CN107069418A (en) * | 2016-11-29 | 2017-08-18 | 中国电子科技集团公司第三十四研究所 | A kind of multiple diode laser array encapsulating structures |
| CN107942521A (en) * | 2017-12-21 | 2018-04-20 | 中国电子科技集团公司第三十四研究所 | A kind of diode laser array light source |
| CN108012573A (en) * | 2015-03-27 | 2018-05-08 | 捷普有限公司 | Laser projection module |
| US10069275B1 (en) * | 2017-10-26 | 2018-09-04 | Namuga Co., Ltd. | Beam projector module using laser |
| CN207938654U (en) * | 2018-01-05 | 2018-10-02 | 福建天电光电有限公司 | A kind of leadless packages light-source structure |
| CN209150486U (en) * | 2018-10-30 | 2019-07-23 | 上海索晔国际贸易有限公司 | A kind of VCSEL laser device |
-
2018
- 2018-10-30 CN CN201811275652.0A patent/CN109412017A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7265439B1 (en) * | 1999-11-30 | 2007-09-04 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Low cost, high speed, high efficiency infrared transceiver |
| CN103676157A (en) * | 2012-09-14 | 2014-03-26 | 任正明 | Laser module of point light source |
| CN105765743A (en) * | 2013-11-29 | 2016-07-13 | 奥斯兰姆奥普托半导体股份有限两合公司 | Optoelectronic component and method for the production thereof |
| CN108012573A (en) * | 2015-03-27 | 2018-05-08 | 捷普有限公司 | Laser projection module |
| CN107069418A (en) * | 2016-11-29 | 2017-08-18 | 中国电子科技集团公司第三十四研究所 | A kind of multiple diode laser array encapsulating structures |
| US10069275B1 (en) * | 2017-10-26 | 2018-09-04 | Namuga Co., Ltd. | Beam projector module using laser |
| CN107942521A (en) * | 2017-12-21 | 2018-04-20 | 中国电子科技集团公司第三十四研究所 | A kind of diode laser array light source |
| CN207938654U (en) * | 2018-01-05 | 2018-10-02 | 福建天电光电有限公司 | A kind of leadless packages light-source structure |
| CN209150486U (en) * | 2018-10-30 | 2019-07-23 | 上海索晔国际贸易有限公司 | A kind of VCSEL laser device |
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