CN109411615B - Organic light emitting diode light emitting device and method of manufacturing the same - Google Patents
Organic light emitting diode light emitting device and method of manufacturing the same Download PDFInfo
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- CN109411615B CN109411615B CN201811276856.6A CN201811276856A CN109411615B CN 109411615 B CN109411615 B CN 109411615B CN 201811276856 A CN201811276856 A CN 201811276856A CN 109411615 B CN109411615 B CN 109411615B
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- H10K50/00—Organic light-emitting devices
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Abstract
The invention provides an organic light-emitting diode device which comprises a substrate, an organic light-emitting diode arranged on the substrate and an encapsulation layer for encapsulating the organic light-emitting diode, wherein the encapsulation layer comprises a molecular sieve layer, and the pore size of the molecular sieve layer is not more than 0.34 nm. The invention also provides a manufacturing method of the organic light-emitting diode device, wherein in the organic light-emitting diode device, the packaging layer can well isolate water and oxygen.
Description
Technical Field
The present invention relates to the field of electronic devices, and in particular, to an organic light emitting diode device and a method of manufacturing the organic light emitting diode device.
Background
An organic light emitting diode device is a solid-state light emitting device, and is widely used in the fields of illumination, display, and the like.
The organic light emitting diode device includes a substrate, an organic light emitting diode disposed on the substrate, and an encapsulation layer encapsulating the organic light emitting diode. The packaging layer is mainly used for isolating the organic light-emitting diode from external water oxygen and preventing the organic light-emitting diode from being corroded by the water oxygen.
Therefore, how to package the organic light emitting diode to prevent the organic light emitting diode from being corroded is an urgent technical problem to be solved in the field.
Disclosure of Invention
An object of the present invention is to provide an organic light emitting diode device in which an encapsulation layer can favorably encapsulate an organic light emitting diode in the organic light emitting diode device, and a method for manufacturing the organic light emitting diode device.
In order to achieve the above object, there is provided an organic light emitting diode device including a substrate, an organic light emitting diode disposed on the substrate, and an encapsulation layer encapsulating the organic light emitting diode, wherein the encapsulation layer includes a molecular sieve layer having a pore size of not more than 0.34 nm.
Preferably, the molecular sieve layer comprises a KA molecular sieve layer.
Preferably, the thickness of the molecular sieve layer is between 80nm and 120 nm.
Preferably, the encapsulating layer still includes interior encapsulating layer and outer encapsulating layer, interior encapsulating layer the molecular sieve layer with outer encapsulating layer is followed the thickness direction of encapsulating layer sets gradually, interior encapsulating layer with the organic light emitting diode laminating, interior encapsulating layer with outer encapsulating layer is made by the organic matter.
Preferably, the thickness of the inner encapsulation layer is between 150nm and 500 nm;
the thickness of the outer packaging layer is between 150nm and 500 nm.
Preferably, at least one of the inner and outer encapsulation layers is made of parylene material.
As a second aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode device, wherein the method includes:
providing a substrate;
forming an organic light emitting diode on the substrate;
encapsulating the organic light emitting diode to obtain an encapsulation layer for encapsulating the organic light emitting diode, wherein the encapsulation layer comprises a molecular sieve layer, and the pore size of the molecular sieve layer is not more than 0.34 nm.
Preferably, the step of encapsulating the organic light emitting diode includes:
carrying out primary packaging on the organic light-emitting diode by using organic matters to obtain an inner packaging layer;
coating KA powder suspension on the inner packaging layer, and drying to obtain the molecular sieve layer;
and secondarily encapsulating the organic light-emitting diode with the molecular sieve layer by using organic matters to obtain an outer encapsulation layer, so that the encapsulation layer comprises the inner encapsulation layer, the molecular sieve layer and the outer encapsulation layer.
Preferably, the manufacturing method further includes a step of preparing a KA powder suspension, the step of preparing the KA powder suspension including:
with Na2SiO3·9H2O、NaOH、NaAlO2Preparing NaA powder for raw materials;
adding NaA powder into a KCl solution to obtain a mixed solution;
placing the mixed solution in a microwave environment, and carrying out microwave treatment on the mixed solution to obtain a primary molecular sieve material;
grinding the primary molecular sieve material to obtain primary molecular sieve material powder;
annealing the primary molecular sieve material powder to obtain KA powder, wherein the annealing temperature is 500-600 ℃, and the annealing time is 2.5-3.5 h;
dispersing KA powder in the organic dispersion liquid to obtain the KA powder suspension.
Preferably, the organic dispersion comprises ethanol.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of an OLED device provided in the present invention;
FIG. 2 is a schematic diagram of an organic light emitting diode;
FIG. 3 is a flow chart of a method of manufacturing provided by the present invention.
Description of the reference numerals
110: substrate 120: organic light emitting diode
130: the encapsulation layer 131: inner packaging layer
132: molecular sieve layer 133: outer packaging layer
201: anode 202: hole injection layer
203: hole transport layer 204: luminescent layer
205: electron transport layer 206: doping layer
207: cathode electrode
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
As one aspect of the present invention, there is provided an organic light emitting diode device, as shown in fig. 1, including a substrate 110, an organic light emitting diode 120 disposed on the substrate 110, and an encapsulation layer 130 encapsulating the organic light emitting diode 120, wherein the encapsulation layer 130 includes a molecular sieve layer 132, and a pore size of the molecular sieve layer 132 is not more than 0.34 nm.
The size of oxygen molecules is approximately between 0.34nm and 0.35nm, the size of water molecules is approximately 0.4nm, and the size of the molecular sieve layer 132 in the encapsulation layer 130 of the organic light emitting diode device is not more than 0.34nm, so that both the water molecules and the oxygen molecules cannot pass through the molecular sieve layer 132, thereby playing a better role in isolating water and oxygen, preventing the organic light emitting diode 120 from being corroded by water and oxygen, and prolonging the service life of the organic light emitting diode device.
Besides being capable of well isolating water molecules and oxygen molecules, the molecular sieve layer 132 also has good heat conductivity, thereby improving the heat dissipation performance of the organic light emitting diode device.
In the present invention, the specific material of the molecular sieve layer 132 is not particularly limited, and as a preferred embodiment, the molecular sieve layerThe material of layer 132 includes a KA molecular sieve material. The pore size of the KA molecular sieve layer material is 0.3nm, and the function of blocking water molecules and oxygen molecules can be met. A represents A-type zeolite molecular sieve, which is a general name of a molecular sieve. KA molecular sieve represents that the cation component in the molecular sieve framework is K+。
For convenience of manufacture and to ensure the function of the molecular sieve layer 132 to exclude water and oxygen, it is preferable that the thickness of the molecular sieve layer is between 80nm and 120 nm.
In the present invention, the specific structure of the encapsulation layer 130 is not particularly limited as long as the encapsulation layer 130 includes the molecular sieve layer 132. The molecular sieve material is usually in the form of powder, and in order to facilitate the formation of the molecular sieve layer 132 using the molecular sieve material in the form of powder, preferably, as shown in fig. 1, the encapsulating layer 130 may further include an inner encapsulating layer 131 and an outer encapsulating layer 133. The inner encapsulation layer 131, the molecular sieve layer 132 and the outer encapsulation layer 133 are sequentially arranged along the thickness direction of the encapsulation layer 130, the inner encapsulation layer 131 is attached to the organic light emitting diode 120, and both the inner encapsulation layer 131 and the outer encapsulation layer 133 are made of organic matters.
After the inner sealing layer 131 is formed, a suspension containing a powder of a molecular sieve material is applied to the inner sealing layer 131, and dried to obtain the molecular sieve layer 132. The molecular sieve layer 132 may be protected by providing an outer encapsulation layer 133 on the outside of the molecular sieve layer 132.
In the present invention, the inner encapsulation layer 131 and the outer encapsulation layer 133 are made of organic materials, so that the thickness of the organic light emitting diode device and the total weight of the organic light emitting diode device are reduced, which is beneficial to realizing the lightness and thinness of the organic light emitting diode device.
Also, the outer encapsulation layer 133 is organic, so that a flexible organic light emitting diode device can be realized.
In a preferred embodiment, the thickness of the inner packaging layer 131 is between 150nm and 500nm, and the thickness of the outer packaging layer 132 is between 150nm and 500 nm. It can be seen that the overall thickness of the encapsulation layer of the organic light emitting diode device does not exceed 1mm, which results in a reduction in the overall thickness of the organic light emitting diode device.
As a preferred embodiment, at least one of the inner and outer encapsulation layers 131 and 133 is made of parylene material.
In the present invention, the specific structure of the organic light emitting diode device is not particularly limited. For example, the organic light emitting diode device may be a light source or a display device. When the organic light emitting diode device is a display device, the organic light emitting diode device may further include a pixel circuit layer disposed between the substrate 110 and the organic light emitting diode 120.
In the present invention, the specific structure of the organic light emitting diode is not particularly limited. As one embodiment, as shown in fig. 2, the organic light emitting diode includes an anode 201, a hole injection layer 202, a hole transport layer 203, an emission layer 204, an electron transport layer 205, a doping layer 206, and a cathode 207, which are stacked.
The anode 201 may be made of Ag or ITO. Typically, the thickness of the anode is between 50nm and 80 nm.
The material of the hole injection layer 202 may be MoO3The thickness may be between 3nm and 5 nm.
The light-emitting layer 204 may be made of an organic light-emitting small molecule material and may have a thickness of 30 nm.
The material of the electron transport layer 205 is TPBi, and the thickness may be 30 nm.
The material of doped layer 206 was Cu with a thickness of 3 nm.
The cathode 207 may be made of Ag and have a thickness of 15nm to 20 nm.
As a second aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode device, wherein, as shown in fig. 3, the method includes:
in step S310, a substrate is provided;
in step S320, forming an organic light emitting diode on the substrate;
in step S330, the organic light emitting diode is encapsulated to obtain an encapsulation layer encapsulating the organic light emitting diode, wherein the encapsulation layer includes a molecular sieve layer, and a pore size of the molecular sieve layer is not more than 0.34 nm.
The organic light-emitting diode device provided by the invention can be prepared by the manufacturing method provided by the invention. As described above, since the organic light emitting diode device includes the molecular sieve layer, the encapsulation layer of the organic light emitting diode device can better insulate water and oxygen and can also better achieve heat dissipation.
As an embodiment, step S330 includes:
in step S331, primarily encapsulating the organic light emitting diode with an organic substance to obtain an inner encapsulation layer;
in step S332, applying a KA powder suspension on the inner encapsulation layer, and drying to obtain the molecular sieve layer;
in step S333, the organic light emitting diode on which the molecular sieve layer is formed is secondarily encapsulated with an organic substance to obtain an outer encapsulation layer, such that the encapsulation layer includes the inner encapsulation layer, the molecular sieve layer, and the outer encapsulation layer.
Can do through setting up interior encapsulated layer the molecular sieve layer provides and depends on the layer, can protect the molecular sieve layer through setting up outer encapsulated layer.
In the invention, no special requirement is made on how to obtain the KA powder suspension, the KA powder can be obtained in a commercially available mode, and then the KA powder is dispersed in the dispersion liquid.
Preferably, the step of preparing a suspension of KA powder comprises:
with Na2SiO3·9H2O、NaOH、NaAlO2Preparing NaA powder for raw materials;
adding NaA powder into a KCl solution to obtain a mixed solution;
placing the mixed solution in a microwave environment, and carrying out microwave treatment on the mixed solution to obtain a primary molecular sieve material;
grinding the primary molecular sieve material to obtain primary molecular sieve material powder;
annealing the primary molecular sieve material powder to obtain KA powder, wherein the annealing temperature is 500-600 ℃, and the annealing time is 2.5-3.5 h;
dispersing KA powder in the organic dispersion liquid to obtain the KA powder suspension.
In the invention, firstly, NaA powder is prepared, and then KA molecular sieve material can be obtained by an ion exchange method.
As a preferred embodiment, in the mixed solution, the mass volume ratio of the NaA powder to the KCl solution is 1 g: 200 mL. Wherein the concentration of the KCl solution is 0.04mol/L to 0.08 mol/L. When the mixed solution is subjected to microwave treatment, the microwave power is 600W, the temperature is 110-120 ℃, and the treatment time is 20-30 min. After the treatment is finished, the reaction solution after the treatment is subjected to suction filtration and washing, wherein the washing times are 3-5 times. And then, putting the filter cake obtained by washing into a forced air drying oven for drying, wherein the drying temperature is 120 ℃. After drying, grinding is carried out to obtain a primary molecular sieve material (also called primary KA powder).
When annealing the primary molecular sieve material, a stepwise temperature rise method may be adopted so that the temperature in the heat treatment furnace reaches the annealing temperature. Specifically, the initial heating rate was 2 ℃/min, and after the temperature reached 200 ℃, the heating rate was adjusted to 1.5 ℃/min.
After the annealing is finished, the temperature in the heat treatment furnace is reduced to the room temperature at the speed of 3 ℃/min, and thus the KA powder can be obtained.
In the present invention, Na is used2SiO3·9H2O、NaOH、NaAlO2The steps for obtaining NaA powder for the raw material preparation may include:
preparation of Na2SiO3·9H2O solution;
mixing NaOH solution with Na2SiO3·9H2Mixing the O solution to obtain a first solution;
NaAlO is added2Mixing the solution with the first mixed solution to obtain a second solution;
and placing the second solution into a microwave environment, and carrying out microwave treatment on the second solution to obtain NaA powder.
As described above, in the starting material for preparing KA powder, Na2SiO3·9H2O is silicon source, NaAlO2As an aluminum source, NaA powder is prepared by a microwave method, and then KA powder is obtained by an ion exchange method. Wherein, the raw materials for preparing NaA powder satisfy the following proportion:
n(SiO2)：n(Al2O3)：n(H2O)＝1:1.64:8.85:570。
wherein, n (SiO)2) Is SiO2Mole number of (3), n (Al)2O3) Is Al2O3Mole number of (3), n (H)2O) is H2The number of moles of O.
In the preparation of Na2SiO3·9H2In the step of O solution, Na is stirred2SiO3·9H2And adding O into deionized water, and uniformly mixing.
In the step of preparing the first mixed solution, the molar number of each substance satisfies the following ratio: n (Na)2SiO3·9H2O)：n(NaOH)：n(H2O)＝1:12.13:350.8。
After mixing NaOH solution with Na2SiO3After the solution was mixed, the mixture was stirred at room temperature for 1 hour.
To obtain NaAlO2Stirring the NaAlO solution2Adding into deionized water, and mixing to obtain NaAlO2And (3) solution. Wherein NaAlO2In solution, Na2SiO3The mole number of H2O satisfies the following ratio: n (NaAlO)2)：n(H2O)＝1:63.84。
In the reaction of NaAlO2In the step of mixing the solution with the first mixed solution, NaAlO is added2The solution is added into the first mixed solution, and the adding speed is controlled to be 10 mL/min.
After the second mixed solution is obtained, starting magnetic stirring, wherein the stirring speed is 100r/min to 120r/min, the microwave power is 800W to 900W, the temperature is 80 ℃ to 90 ℃, and the crystallization time is 15 min.
And after crystallization is finished, carrying out suction filtration and washing on the mixed solution until the pH value of the washing solution becomes neutral, and obtaining a filter cake.
And (3) putting the filter cake into a forced air drying oven, drying at the temperature of 80-90 ℃, and performing eye mask to obtain NaA powder.
In the present invention, the specific composition of the organic dispersion is not particularly required, and for example, the organic dispersion may include an ethanol solution.
Specifically, 25g to 30g of ka powder can be dispersed per 100mL of ethanol solution.
Correspondingly, in the step of coating the KA powder suspension on the inner packaging layer, the KA powder suspension can be coated by adopting a spin coating method, and the coating amount is 1mL/6cm3。
Correspondingly, when the KA coating is dried, the drying temperature can be 110 ℃, and the drying time can be 15min to 20 min.
As described above, the organic light emitting diode includes the anode 201, the hole injection layer 202, the hole transport layer 203, the light emitting layer 204, the electron transport layer 205, the doping layer 206, and the cathode 207, which are stacked.
Accordingly, in the manufacturing method, step S320 may include:
forming an anode;
forming a hole injection layer;
forming a hole transport layer;
forming a light emitting layer;
forming an electron transport layer;
forming a doping layer;
a cathode is formed.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (1)
1. A method of manufacturing an organic light emitting diode device, the method comprising:
providing a substrate;
forming an organic light emitting diode on the substrate;
encapsulating the organic light emitting diode to obtain an encapsulation layer encapsulating the organic light emitting diode, wherein the encapsulation layer comprises a molecular sieve layer, and the pore size of the molecular sieve layer is not more than 0.34 nm;
the step of encapsulating the organic light emitting diode includes:
carrying out primary packaging on the organic light-emitting diode by using organic matters to obtain an inner packaging layer;
preparing a KA powder suspension comprising: with Na2SiO3·9H2O、NaOH、NaAlO2Preparing NaA powder for raw materials; adding NaA powder into a KCl solution to obtain a mixed solution, wherein the mass volume ratio of the NaA powder to the KCl solution is 1 g: 200mL, wherein the concentration of the KCl solution is 0.04mol/L to 0.08 mol/L; placing the mixed solution in a microwave environment, and carrying out microwave treatment on the mixed solution to obtain a primary molecular sieve material, wherein the microwave power is 600W, the process temperature is 110-120 ℃, and the microwave treatment time is 20-30 min; grinding the primary molecular sieve material to obtain primary molecular sieve material powder; the process temperature reaches the annealing temperature by adopting a staged heating method, and the primary molecular sieve material powder is annealed to obtain KA powder, wherein the annealing temperature is 500-600 ℃, and the annealing time is 2.5-3.5 h; dispersing KA powder in ethanol to obtain the KA powder suspension, wherein 25 g-30 g of KA powder is dispersed in each 100mL of ethanol solution;
coating the KA powder suspension on the inner packaging layer in a spin coating manner, wherein the coating amount is 1mL/6cm3Drying at 110 ℃ for 15-20 min to obtain the molecular sieve layer;
secondarily encapsulating the organic light emitting diode with the molecular sieve layer formed thereon by using organic matter to obtain an outer encapsulation layer, so that the encapsulation layer comprises the inner encapsulation layer, the molecular sieve layer and the outer encapsulation layer;
wherein the thickness of the molecular sieve layer is between 80nm and 120nm, the thickness of the inner packaging layer is between 150nm and 500nm, and the total thickness of the packaging layer is not more than 1 mm.
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| CN102104114A (en) * | 2010-12-09 | 2011-06-22 | 深圳丹邦投资集团有限公司 | Flexible substrate and preparation method thereof |
| CN104157798A (en) * | 2014-08-21 | 2014-11-19 | 深圳市华星光电技术有限公司 | Packaging method and structure of OLED |
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| CN104157798A (en) * | 2014-08-21 | 2014-11-19 | 深圳市华星光电技术有限公司 | Packaging method and structure of OLED |
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