CN109411545A - A kind of thin film transistor (TFT) and its manufacturing method - Google Patents
A kind of thin film transistor (TFT) and its manufacturing method Download PDFInfo
- Publication number
- CN109411545A CN109411545A CN201811153521.5A CN201811153521A CN109411545A CN 109411545 A CN109411545 A CN 109411545A CN 201811153521 A CN201811153521 A CN 201811153521A CN 109411545 A CN109411545 A CN 109411545A
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- semiconductor layer
- gate insulating
- tft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 191
- 238000000926 separation method Methods 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 328
- 239000002184 metal Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 22
- 238000010586 diagram Methods 0.000 description 16
- 238000002955 isolation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 first electrode 01 Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Abstract
Description
Claims (14)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811153521.5A CN109411545A (en) | 2018-09-30 | 2018-09-30 | A kind of thin film transistor (TFT) and its manufacturing method |
PCT/CN2018/123482 WO2020062666A1 (en) | 2018-09-30 | 2018-12-25 | Thin-film transistor and fabrication method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811153521.5A CN109411545A (en) | 2018-09-30 | 2018-09-30 | A kind of thin film transistor (TFT) and its manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109411545A true CN109411545A (en) | 2019-03-01 |
Family
ID=65465713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811153521.5A Pending CN109411545A (en) | 2018-09-30 | 2018-09-30 | A kind of thin film transistor (TFT) and its manufacturing method |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109411545A (en) |
WO (1) | WO2020062666A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115295609A (en) * | 2022-08-24 | 2022-11-04 | 惠科股份有限公司 | Thin film transistor, preparation method of thin film transistor and display panel |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI727752B (en) * | 2020-04-21 | 2021-05-11 | 友達光電股份有限公司 | Active device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103048840A (en) * | 2012-11-12 | 2013-04-17 | 京东方科技集团股份有限公司 | Array substrate, manufacture method of array substrate, liquid crystal display panel and display device |
CN104091831A (en) * | 2014-06-27 | 2014-10-08 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and display device |
CN104681629A (en) * | 2015-03-18 | 2015-06-03 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, manufacturing methods for thin film transistor and array substrate, and display device |
CN104716196A (en) * | 2015-03-18 | 2015-06-17 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof as well as array substrate and display device |
US20160027873A1 (en) * | 2014-07-22 | 2016-01-28 | Chunghwa Picture Tubes, Ltd. | Thin film transistor |
CN105655407A (en) * | 2016-03-11 | 2016-06-08 | 京东方科技集团股份有限公司 | Polycrystalline silicon thin film transistor and preparation method thereof, array substrate and display device |
CN106024906A (en) * | 2016-07-18 | 2016-10-12 | 京东方科技集团股份有限公司 | Thin film transistor, display substrate and liquid crystal display device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102082179A (en) * | 2010-11-04 | 2011-06-01 | 友达光电股份有限公司 | Thin film transistor and pixel structure with same |
CN103000693B (en) * | 2012-10-08 | 2015-06-17 | 京东方科技集团股份有限公司 | Thin-film transistor, display part, manufacturing method of display part, and display device |
CN105097557A (en) * | 2015-09-25 | 2015-11-25 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) substrate, TFT switch tube and manufacturing method of TFT switch tube |
-
2018
- 2018-09-30 CN CN201811153521.5A patent/CN109411545A/en active Pending
- 2018-12-25 WO PCT/CN2018/123482 patent/WO2020062666A1/en active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103048840A (en) * | 2012-11-12 | 2013-04-17 | 京东方科技集团股份有限公司 | Array substrate, manufacture method of array substrate, liquid crystal display panel and display device |
CN104091831A (en) * | 2014-06-27 | 2014-10-08 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and display device |
US20160027873A1 (en) * | 2014-07-22 | 2016-01-28 | Chunghwa Picture Tubes, Ltd. | Thin film transistor |
CN104681629A (en) * | 2015-03-18 | 2015-06-03 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, manufacturing methods for thin film transistor and array substrate, and display device |
CN104716196A (en) * | 2015-03-18 | 2015-06-17 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof as well as array substrate and display device |
CN105655407A (en) * | 2016-03-11 | 2016-06-08 | 京东方科技集团股份有限公司 | Polycrystalline silicon thin film transistor and preparation method thereof, array substrate and display device |
CN106024906A (en) * | 2016-07-18 | 2016-10-12 | 京东方科技集团股份有限公司 | Thin film transistor, display substrate and liquid crystal display device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115295609A (en) * | 2022-08-24 | 2022-11-04 | 惠科股份有限公司 | Thin film transistor, preparation method of thin film transistor and display panel |
Also Published As
Publication number | Publication date |
---|---|
WO2020062666A1 (en) | 2020-04-02 |
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Legal Events
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TA01 | Transfer of patent application right |
Effective date of registration: 20200827 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Applicant before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Applicant before: Nanjing East China Electronic Information Technology Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200903 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Applicant after: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Address before: Nanjing Crystal Valley Road in Qixia District of Nanjing City Tianyou 210033 Jiangsu province No. 7 Applicant before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Applicant before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Applicant before: Nanjing East China Electronic Information Technology Co.,Ltd. |
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TA01 | Transfer of patent application right | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190301 |
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RJ01 | Rejection of invention patent application after publication |