CN109411327B - All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof - Google Patents

All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof Download PDF

Info

Publication number
CN109411327B
CN109411327B CN201811075229.6A CN201811075229A CN109411327B CN 109411327 B CN109411327 B CN 109411327B CN 201811075229 A CN201811075229 A CN 201811075229A CN 109411327 B CN109411327 B CN 109411327B
Authority
CN
China
Prior art keywords
inorganic perovskite
cspbx
perovskite nanowire
preparation
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811075229.6A
Other languages
Chinese (zh)
Other versions
CN109411327A (en
Inventor
周张凯
蒋丽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Sun Yat Sen University
Original Assignee
National Sun Yat Sen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Sun Yat Sen University filed Critical National Sun Yat Sen University
Priority to CN201811075229.6A priority Critical patent/CN109411327B/en
Publication of CN109411327A publication Critical patent/CN109411327A/en
Application granted granted Critical
Publication of CN109411327B publication Critical patent/CN109411327B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02587Structure
    • H01L21/0259Microstructure
    • H01L21/02603Nanowires
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

Abstract

The invention relates to an all-inorganic perovskite nanowire CsPbX2Y and a preparation method and application thereof. The preparation method comprises the following steps: s1: mixing PbX2And CsY is dissolved in the solvent A to form a mixed solution; wherein X, Y are all halogens; the solvent A is one or two of dimethyl sulfoxide or dimethylformamide; s2: coating the mixed solution S1 on a substrate, and standing the substrate in a closed environment with a solvent B volatilization atmosphere at 17-25 ℃ for 12-24 h to obtain the fully inorganic perovskite nanowire CsPbX with good dispersibility2Y; the solvent B is one or more of isopropanol, n-propanol, n-butanol or cyclohexane. The preparation method provided by the invention has the advantages of low cost, simple process and easily-controlled conditions, and the obtained all-inorganic perovskite nanowire CsPbX2The Y has uniform appearance, good dispersibility and high crystal quality, and can be used as a potential laser material to be applied to a photoelectric detector or a laser.

Description

All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof
Technical Field
The invention belongs to the field of inorganic nanowire preparation, and particularly relates to an all-inorganic perovskite nanowire CsPbX2Y and a preparation method and application thereof.
Background
The perovskite material has great application value due to excellent and unique optical and electrical properties, and can be applied to photoelectric detectors, lasers and the like as a photoelectric material. Most perovskite materials synthesized by the prior art are synthesized by a chemical vapor deposition method or a high-temperature pyrolysis method, and the synthesis equipment is expensive, the synthesis process is complex, the controllability of process conditions is not strong, the morphology and the structure are not uniform, so that the further application of a sample is limited.
Therefore, it is necessary to develop a perovskite material with low cost, simple preparation process and controllable structural morphology to promote further application of the perovskite material.
Disclosure of Invention
The invention aims to overcome the defects of high cost, complex preparation process, low controllability of process conditions, uneven morphology and structure and the like of perovskite materials in the prior art, and provides the CsPbX full-inorganic perovskite nanowire2A method for preparing Y. The preparation method has the advantages of low cost, simple preparation process and easily controlled process conditions, and the prepared all-inorganic perovskite nanowire CsPbX is prepared2The shape of Y is uniform, the dispersity is good, and the crystal quality is high.
Another purpose of the invention is to provide the fully inorganic perovskite nanowire CsPbX prepared by the method2Y。
Another object of the present invention is to provide the above-mentioned all-inorganic perovskite nanowireCsPbX2The use of Y in a photodetector or a laser.
In order to achieve the purpose, the invention adopts the following technical scheme:
all-inorganic perovskite nanowire CsPbX2The preparation method of Y comprises the following steps:
s1: mixing PbX2And CsY is dissolved in the solvent A to form a mixed solution; wherein X, Y are all halogens; the solvent A is one or two of dimethyl sulfoxide or dimethylformamide;
s2: coating the mixed solution S1 on a substrate, and standing the substrate in a closed environment with a solvent B volatilization atmosphere at 17-25 ℃ for 12-24 h to obtain the fully inorganic perovskite nanowire CsPbX with good dispersibility2Y; the solvent B is one or more of isopropanol, n-propanol, n-butanol or cyclohexane.
Controlling PbX2The volatilization rate of the solvent in the mixed solution of CsY and CsPbX is that the prepared all-inorganic perovskite nanowire CsPbX has uniform appearance, good dispersibility and high crystal quality2Key step of Y. Through multiple researches, the inventor of the invention discovers that when one or two of dimethyl sulfoxide and dimethylformamide is selected as a dissolving solvent, the dissolving solvent can be slowly volatilized at a lower temperature of 17-25 ℃ under the volatilization atmosphere of one or more of isopropanol, normal propanol, normal butanol or cyclohexane, the crystallization speed in the solution is reduced, and the all-inorganic perovskite nanowire CsPbX obtained through the reaction can be obtained2The Y shape is uniform, the dispersibility is good, the crystal quality is high, and the all-inorganic perovskite nanowire CsPbX2The Y can be used as a potential laser material in a photoelectric detector or a laser.
In addition, the preparation method has low cost, simple preparation process and easily controlled process conditions.
Preferably, each of said X, Y is independently selected from Cl, Br or I; and X, Y where one is Cl, the other is not I.
All-inorganic perovskite nanowire CsPbX prepared by using lead halide and cesium halide as raw materials2The morphology of Y is relatively uniform.
More preferably, both X and Y are Cl, Br or I.
When X and Y are Cl, Br or I, the prepared all-inorganic perovskite nanowire CsPbX2The purity of Y is high and the appearance is uniform.
Preferably, PbX is contained in the mixed solution S12The concentration of (b) is 0.001-0.25 mol/L, and the molar ratio of Pb ions to Cs ions is 1: 1.
The fully inorganic perovskite nano-wire CsPbX prepared in the concentration range2The length of Y is moderate, and the quality is high.
Preferably, the solvent a in S1 is dimethylformamide.
All-inorganic perovskite nanowire CsPbX prepared by using dimethylformamide as solvent A2The Y dispersibility is better.
Preferably, the solvent B in S2 is isopropanol.
The atmosphere formed by the volatilization of the isopropanol has the best effect of slowing down the volatilization of the mixed solution, and the prepared all-inorganic perovskite nanowire CsPbX2The morphology of Y is more uniform.
Preferably, the substrate in S2 is a silicon wafer, a quartz wafer, or ITO.
The surface of the material as a substrate is smooth, and the prepared all-inorganic perovskite nanowire CsPbX2The morphology of Y is relatively uniform.
The invention also provides the fully inorganic perovskite nanowire CsPbX2Y, obtained by the above preparation method.
Preferably, the all-inorganic perovskite nanowire CsPbX2The length of Y is 1.5 to 12 μm.
The length of the fully inorganic perovskite nanowire CsPbX is in the range2The Y has higher application value in a photoelectric detector or a laser.
The above-mentioned all-inorganic perovskite nanowire CsPbX2The use of Y in photodetectors or lasers is also within the scope of the present invention.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a medicineOrganic perovskite nanowire CsPbX2The preparation method of Y has low cost, simple preparation process and easily controlled process conditions, and the prepared all-inorganic perovskite nanowire CsPbX is2The shape of Y is uniform, the dispersity is good, and the crystal quality is high; the all-inorganic perovskite nanowire CsPbX2The Y can be used as a potential laser material in a photoelectric detector or a laser.
Drawings
FIG. 1 shows the CsPbX full-inorganic perovskite nanowire provided in example 12SEM picture of Y;
FIG. 2 shows the CsPbX full-inorganic perovskite nanowire provided in example 22SEM picture of Y;
FIG. 3 shows the CsPbX full-inorganic perovskite nanowire provided in example 12Experimental setup diagram of Y;
wherein, 1 is a beaker; 2 is a sealant; 3 is a platform; 4 is a substrate; 5 is isopropanol; 6 is a mixed solution.
Detailed Description
The invention is further illustrated by the following examples. These examples are intended to illustrate the invention and are not intended to limit the scope of the invention. Experimental procedures without specific conditions noted in the examples below, generally according to conditions conventional in the art or as suggested by the manufacturer; the raw materials, reagents and the like used are, unless otherwise specified, those commercially available from the conventional markets and the like. Any insubstantial changes and substitutions made by those skilled in the art based on the present invention are intended to be covered by the claims.
Example 1
This example provides an all-inorganic perovskite nanowire CsPbBr3. The preparation method comprises the following steps:
0.02mmol of lead halide (PbBr) was added to a small beaker (10 mL) in that order2) And 0.02mmol cesium halide (CsBr) and 2.0mL DMF, stirred to complete dissolution. Dropping 2 μ L of the mixed solution on a silicon substrate suspended on a platform above the isopropanol liquid level, sealing a beaker (100 mL) as shown in FIG. 3, placing in an environment of 22 deg.C, and standing for 12 hr to obtain the final product with good dispersibilityAll-inorganic perovskite nanowire (CsPbBr)3)。
As shown in FIG. 1, the all-inorganic perovskite nanowire prepared by the embodiment has good dispersibility and uniform morphology, and the length of the all-inorganic perovskite nanowire is 1.5-2.0 μm.
Example 2
This example provides an all-inorganic perovskite nanowire CsPbBr3. The preparation method comprises the following steps:
0.1mmol of lead halide (PbBr) was added to a small beaker (10 mL) in that order2) And 0.1mmol cesium halide (CsBr) and 2.0mL DMF, stirred to complete dissolution. Dropping 2 μ L of the mixed solution on a silicon substrate suspended on a platform above the isopropanol liquid level, sealing a beaker (100 mL), placing in an environment of 20 ℃, and obtaining the fully inorganic perovskite nanowire (CsPbBr) with good dispersibility after 12h3)。
As shown in FIG. 2, the all-inorganic perovskite nanowire prepared by the embodiment has good dispersibility and uniform morphology, and the length of the all-inorganic perovskite nanowire is 6.0-12.0 μm.
Example 3
This example provides an all-inorganic perovskite nanowire CsPbBr2I. In the preparation method, 0.002mmol of PbBr is selected as lead halide2The cesium halide was chosen for CsI of 0.002mmol, and the rest of the procedure was the same as in example 1.
The fully inorganic perovskite nanowire (CsPbBr) prepared in this example2I) The dispersibility, morphology and length are similar to those of example 1.
Example 4
This example provides an all-inorganic perovskite nanowire CsPbBr3. In the preparation method, the adding amount of the lead halide and the adding amount of the cesium halide are both 0.5mmol, and the rest steps are the same as the steps in the example 1.
The fully inorganic perovskite nanowire (CsPbBr) prepared in this example3) The dispersibility, morphology and length are similar to those of example 2.
Example 5
This example provides an all-inorganic perovskite nanowire CsPbBr3. In the preparation method, DMF is changed into dimethyl sulfoxide, isopropanol is changed into normal propanol, and the reaction is carried outThe temperature was 17 ℃ and the reaction time was 24h, the rest of the procedure being identical to that of example 1.
The fully inorganic perovskite nanowire (CsPbBr) prepared in this example3) The dispersibility, morphology and length are similar to those of example 1.
Example 6
This example provides an all-inorganic perovskite nanowire CsPbBr3. In the preparation method, isopropanol is changed into n-butanol, the reaction temperature is 25 ℃, the substrate is quartz plate, and the rest steps are the same as those in the example 1.
The fully inorganic perovskite nanowire (CsPbBr) prepared in this example3) The dispersibility, morphology and length are similar to those of example 1.
Example 7
This example provides an all-inorganic perovskite nanowire CsPbBr3. In the preparation method, isopropanol is changed into cyclohexane, the substrate is ITO, and the rest steps are the same as those in the embodiment 1.
The fully inorganic perovskite nanowire (CsPbBr) prepared in this example3) The dispersibility, morphology and length are similar to those of example 1.
It will be appreciated by those of ordinary skill in the art that the examples provided herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited examples and embodiments. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.

Claims (10)

1. All-inorganic perovskite nanowire CsPbX2The preparation method of Y is characterized by comprising the following steps:
s1: mixing PbX2And CsY is dissolved in the solvent A to form a mixed solution; wherein X, Y are all halogens; the solvent A is one or two of dimethyl sulfoxide or dimethylformamide;
s2: coating the mixed solution S1 on a substrate, and placing the substrate onStanding the mixture for 12-24 hours at 17-25 ℃ in a closed environment with a solvent B volatilization atmosphere to obtain the fully inorganic perovskite nanowire CsPbX with good dispersibility2Y; the solvent B is one or more of isopropanol, n-propanol, n-butanol or cyclohexane.
2. The all-inorganic perovskite nanowire CsPbX of claim 12A process for the preparation of Y, wherein each of said X, Y is independently selected from Cl, Br or I; and X, Y where one is Cl, the other is not I.
3. The all-inorganic perovskite nanowire CsPbX of claim 22The preparation method of Y is characterized in that X and Y are Cl, Br or I.
4. The all-inorganic perovskite nanowire CsPbX of claim 12The preparation method of Y is characterized in that PbX is contained in the mixed solution of S12The concentration of (b) is 0.001-0.25 mol/L, and the molar ratio of Pb ions to Cs ions is 1: 1.
5. The all-inorganic perovskite nanowire CsPbX of claim 12A method for producing Y, wherein the solvent a in S1 is dimethylformamide.
6. The all-inorganic perovskite nanowire CsPbX of claim 12The process for producing Y is characterized in that the solvent B in S2 is isopropyl alcohol.
7. The all-inorganic perovskite nanowire CsPbX of claim 12The preparation method of Y is characterized in that the substrate in S2 is a silicon wafer, a quartz wafer or ITO.
8. All-inorganic perovskite nanowire CsPbX2Y, which is obtained by the production method according to any one of claims 1 to 7.
9. According toThe all-inorganic perovskite nanowire CsPbX of claim 82Y, characterized in that the all-inorganic perovskite nanowire CsPbX2The length of Y is 1.5 to 12 μm.
10. The fully inorganic perovskite nanowire CsPbX of claim 8 or 92The use of Y in a photodetector or a laser.
CN201811075229.6A 2018-09-14 2018-09-14 All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof Active CN109411327B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811075229.6A CN109411327B (en) 2018-09-14 2018-09-14 All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811075229.6A CN109411327B (en) 2018-09-14 2018-09-14 All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN109411327A CN109411327A (en) 2019-03-01
CN109411327B true CN109411327B (en) 2021-03-12

Family

ID=65464274

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811075229.6A Active CN109411327B (en) 2018-09-14 2018-09-14 All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN109411327B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109980037A (en) * 2019-03-07 2019-07-05 武汉大学 Full-inorganic perovskite micron chip, Schottky type UV photodetector and preparation method
CN111139518A (en) * 2019-12-23 2020-05-12 大连理工大学 Preparation method of air-stable all-inorganic mixed halogen perovskite nanowire
CN113186600A (en) * 2021-04-27 2021-07-30 上海大学 All-photon password primitive preparation method based on high-flux perovskite micro-single crystal array
CN113594396B (en) * 2021-07-08 2022-08-05 浙江大学 Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof
CN114958349B (en) * 2022-05-24 2024-01-26 成都大学 Preparation method and application of all-inorganic perovskite scintillator nanowire array

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106629834B (en) * 2016-12-14 2019-04-16 南京理工大学 A kind of method that recrystallization prepares lead halogen perovskite nano wire
CN107681054B (en) * 2017-09-04 2020-01-21 上海理工大学 Preparation method of perovskite crystal nanowire
CN107919409B (en) * 2017-09-20 2019-11-12 湖北大学 One kind being based on CsPbBr3The visible light photodetector and preparation method thereof of full-inorganic perovskite nano wire
CN107986323B (en) * 2017-11-10 2019-05-10 电子科技大学 A kind of CsPb2Br5The preparation method of inorganic perovskite nanometer sheet

Also Published As

Publication number Publication date
CN109411327A (en) 2019-03-01

Similar Documents

Publication Publication Date Title
CN109411327B (en) All-inorganic perovskite nanowire CsPbX2Y and preparation method and application thereof
Chen Two‐Step Sequential Deposition of Organometal Halide Perovskite for Photovoltaic Application
Rezaee et al. Solvent engineering as a vehicle for high quality thin films of perovskites and their device fabrication
Gao et al. Halide perovskite crystallization processes and methods in nanocrystals, single crystals, and thin films
CN108559503B (en) Cs (volatile organic Compounds)2AgBiBr6Double perovskite and preparation method thereof
Liu et al. Solution‐Processed High‐Quality Cesium Lead Bromine Perovskite Photodetectors with High Detectivity for Application in Visible Light Communication
Wang et al. Growth of metal halide perovskite materials
CN108560056A (en) A kind of two dimension perovskite monocrystal material and preparation method thereof
CN111129319B (en) Cs (cell lines) n FA 1-n PbX 3 Preparation method of perovskite film
KR102649700B1 (en) Composite light-emitting material, its manufacturing method and its application
CN105024012A (en) A method for manufacturing a high-quality perovskite thin film
CN108682745B (en) Method for preparing perovskite film based on anti-solvent dynamic spin coating
CN108878672B (en) Quantum dot light-emitting layer, quantum dot light-emitting device and preparation method thereof
CN110127752B (en) Stable β -CsPbI3Preparation method of perovskite thin film
Nguyen et al. Single-crystal perovskites prepared by simple solution process: Cast-capping method
CN111139518A (en) Preparation method of air-stable all-inorganic mixed halogen perovskite nanowire
Xiao et al. Achieving mixed halide perovskite via halogen exchange during vapor-assisted solution process for efficient and stable perovskite solar cells
CN112853466A (en) Method for growing copper-based lead-free perovskite single crystal by low-temperature solvent method
Kumar et al. Advanced strategies to tailor the nucleation and crystal growth in hybrid halide perovskite thin films
Ojha et al. Modifications in structural morphology of CH3NH3PbI3 perovskite using nitrilotriacetic acid and glycine as habit modifiers
CN112186106A (en) Method for preparing methylamine lead-iodine perovskite film by using green nontoxic anti-solvent
CN111270310A (en) Pure inorganic narrow-spectrum blue-violet light emitting two-dimensional perovskite single crystal material and growth method
CN112750919B (en) Perovskite nanowire heterojunction and preparation method thereof
CN106450002A (en) Perovskite type photovoltaic-conversion composite sol and preparation method thereof
KR101787083B1 (en) Preparation method of perovskite nanostructures and the perovskite nanostructures thereby

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant