CN109411327A - A kind of full-inorganic perovskite nano wire CsPbX2Y and its preparation method and application - Google Patents
A kind of full-inorganic perovskite nano wire CsPbX2Y and its preparation method and application Download PDFInfo
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- CN109411327A CN109411327A CN201811075229.6A CN201811075229A CN109411327A CN 109411327 A CN109411327 A CN 109411327A CN 201811075229 A CN201811075229 A CN 201811075229A CN 109411327 A CN109411327 A CN 109411327A
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- 239000002070 nanowire Substances 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 26
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011259 mixed solution Substances 0.000 claims abstract description 12
- 239000006185 dispersion Substances 0.000 claims abstract description 11
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims abstract description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 claims abstract description 5
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 3
- 150000002367 halogens Chemical class 0.000 claims abstract description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001417 caesium ion Inorganic materials 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- OSNIIMCBVLBNGS-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-2-(dimethylamino)propan-1-one Chemical compound CN(C)C(C)C(=O)C1=CC=C2OCOC2=C1 OSNIIMCBVLBNGS-UHFFFAOYSA-N 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000012149 noodles Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910052792 caesium Inorganic materials 0.000 description 5
- -1 caesium halide Chemical class 0.000 description 5
- 150000004820 halides Chemical class 0.000 description 5
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention relates to a kind of full-inorganic perovskite nano wire CsPbX2Y and its preparation method and application.The preparation method includes the following steps: S1: by PbX2Solvent A, which is dissolved in, with CsY forms mixed solution；Wherein, X, Y are halogen；The solvent A is one or both of dimethyl sulfoxide or dimethylformamide；S2: by mixed solution described in S1 be coated in substrate on, and by substrate be placed in solvent B volatilization atmosphere closed environment at 17 ~ 25 DEG C stand 12 ~ for 24 hours to get the full-inorganic perovskite nano wire CsPbX of good dispersion2Y；The solvent B is one or more of isopropanol, normal propyl alcohol, n-butanol or hexamethylene.Preparation method provided by the invention is low in cost, and simple process, condition is easily-controllable, obtained full-inorganic perovskite nano wire CsPbX2Y shape looks are uniform, good dispersion, and crystal quality is high and can be used as potential laser material and applies in photodetector or laser.
Description
Technical field
The invention belongs to inorganic nanowires preparation fields, and in particular to a kind of full-inorganic perovskite nano wire CsPbX2Y and
Preparation method and application.
Background technique
Perovskite material has huge application value with its excellent and unique optically and electrically performance, is used as light
Electric material can be applied to photodetector, laser etc..Prior art synthesis perovskite material majority is all to utilize chemical gaseous phase
Sedimentation or high temperature pyrolytic cracking (HTP) are synthesized, and synthesis device is expensive, and synthesis technology is complicated, and process conditions controllability is not strong,
Appearance structure is uneven, limits further applying for sample.
A kind of low in cost therefore, it is necessary to develop, preparation process is simple, the controllable perovskite material of structure and morphology, to push away
It is further applied into it.
Summary of the invention
It is an object of the invention to overcome in the prior art perovskite material it is expensive, preparation process is complicated, technique item
The defects of part controllability is not strong, and appearance structure is uneven provides a kind of full-inorganic perovskite nano wire CsPbX2The preparation side of Y
Method.The preparation method is low in cost, and preparation process is simple, easy control of process conditions, the full-inorganic perovskite being prepared
Nano wire CsPbX2Y shape looks are uniform, good dispersion, and crystal quality is high.
Another object of the present invention is to provide a kind of full-inorganic perovskite nano wires prepared by the above method
CsPbX2Y。
Another object of the present invention is to provide above-mentioned full-inorganic perovskite nano wire CsPbX2Y is in photodetector or swashs
Application in light device.
For achieving the above object, the present invention adopts the following technical scheme:
A kind of full-inorganic perovskite nano wire CsPbX2The preparation method of Y, includes the following steps:
S1: by PbX2Solvent A, which is dissolved in, with CsY forms mixed solution；Wherein, X, Y are halogen；The solvent A is that dimethyl is sub-
One or both of sulfone or dimethylformamide；
S2: mixed solution described in S1 is coated in substrate, and substrate is placed in the closed environment of solvent B volatilization atmosphere in 17
At ~ 25 DEG C stand 12 ~ for 24 hours to get the full-inorganic perovskite nano wire CsPbX of good dispersion2Y；The solvent B be isopropanol,
One or more of normal propyl alcohol, n-butanol or hexamethylene.
Control PbX2Rate of volatilization with solvent in the mixed solution of CsY is uniform, the good dispersion that is prepared pattern, brilliant
The high full-inorganic perovskite nano wire CsPbX of weight2The committed step of Y.The present inventor by repeatedly the study found that
When selecting one or both of dimethyl sulfoxide and dimethylformamide to be used as dissolution solvent, and in isopropanol, normal propyl alcohol, just
Under the volatilization atmosphere of one or more of butanol or hexamethylene, achieved that under 17 ~ 25 DEG C of lower temperature conditions molten
The slow volatilization for solving solvent reduces full-inorganic perovskite nano wire of the crystallization rate to make reaction obtain in solution
CsPbX2Y shape looks are uniform, good dispersion, and crystal quality is high, full-inorganic perovskite nano wire CsPbX2Y can be used as potential sharp
Luminescent material is applied in photodetector or laser.
In addition, the preparation method is low in cost, preparation process is simple, easy control of process conditions.
Preferably, described X, Y are each independently selected from Cl, Br or I；And X, Y one of them be Cl when, another is not I.
It the use of above-mentioned lead halide, caesium halide is full-inorganic perovskite nano wire CsPbX made from raw material2Y shape looks are more uniform.
It is further preferable that the X and Y are Cl, Br or I.
The above-mentioned full-inorganic perovskite nano wire CsPbX being prepared when X and Y are Cl, Br or I2Y purity is higher,
Pattern is more uniform.
Preferably, PbX in mixed solution described in S12Concentration be 0.001 ~ 0.25mol/L, Pb ion and Cs ion rub
You are than being 1:1.
The full-inorganic perovskite nano wire CsPbX obtained in above-mentioned concentration range2The moderate length of Y, quality are higher.
Preferably, solvent A described in S1 is dimethylformamide.
The full-inorganic perovskite nano wire CsPbX being prepared using dimethylformamide as solvent A2Y dispersibility is more preferable.
Preferably, solvent B described in S2 is isopropanol.
Isopropanol volatilizees best, the full-inorganic calcium titanium obtained that slows down effect that the atmosphere to be formed volatilizees to the mixed solution
Mine nano wire CsPbX2Y shape looks are more evenly.
Preferably, substrate described in S2 is silicon wafer, quartz plate or ITO.
Above-mentioned material is more smooth as substrate surface, manufactured full-inorganic perovskite nano wire CsPbX2Y shape looks are more equal
It is even.
The present invention also provides a kind of full-inorganic perovskite nano wire CsPbX2Y is obtained by above-mentioned preparation method.
Preferably, the full-inorganic perovskite nano wire CsPbX2Y length is 1.5 ~ 12 μm.
The full-inorganic perovskite nano wire CsPbX of length within the above range2Y has in photodetector or laser
Higher application value.
Above-mentioned full-inorganic perovskite nano wire CsPbX2Application of the Y in photodetector or laser is also of the invention
In protection scope.
Compared with prior art, the invention has the following beneficial effects:
Full-inorganic perovskite nano wire CsPbX provided by the invention2The preparation method of Y is low in cost, and preparation process is simple, technique
Condition is easy to control, the full-inorganic perovskite nano wire CsPbX being prepared2Y shape looks are uniform, good dispersion, and crystal quality is high；
Full-inorganic perovskite nano wire CsPbX2Y can be used as potential laser material and apply in photodetector or laser.
Detailed description of the invention
Fig. 1 is the full-inorganic perovskite nano wire CsPbX that embodiment 1 provides2The SEM of Y schemes；
Fig. 2 is the full-inorganic perovskite nano wire CsPbX that embodiment 2 provides2The SEM of Y schemes；
Fig. 3 is the full-inorganic perovskite nano wire CsPbX that embodiment 1 provides2The Experimental equipment of Y；
Wherein, 1 is beaker；2 be sealant；3 be platform；4 be substrate；5 be isopropanol；6 be mixed solution.
Specific embodiment
Below with reference to embodiment, the present invention is further explained.These embodiments are merely to illustrate the present invention rather than limitation
The scope of the present invention.Test method without specific conditions in lower example embodiment usually according to this field normal condition or is pressed
The condition suggested according to manufacturer；Used raw material, reagent etc., unless otherwise specified, being can be from the business such as conventional market
The raw materials and reagents that approach obtains.The variation for any unsubstantiality that those skilled in the art is done on the basis of the present invention
And replacement belongs to scope of the present invention.
Embodiment 1
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr3.The method of being prepared by the following procedure is prepared:
0.02mmol lead halide (PbBr is sequentially added in small beaker (10mL)2) and 0.02mmol caesium halide (CsBr) and
2.0mLDMF, stirring is to being completely dissolved.2 μ L mixed solutions drop is drawn in drop in the silicon substrate being suspended from the above platform of isopropanol liquid level
On bottom, beaker (100mL) is sealed, such as Fig. 3 is placed in 22 DEG C of environment, and the full-inorganic calcium of good dispersion can be obtained after 12h
Titanium ore nano wire (CsPbBr3).
Such as Fig. 1, full-inorganic perovskite nano wire good dispersion made from the present embodiment, pattern is uniform, the length is 1.5 ~
2.0μm。
Embodiment 2
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr3.The method of being prepared by the following procedure is prepared:
0.1mmol lead halide (PbBr is sequentially added in small beaker (10mL)2) and 0.1mmol caesium halide (CsBr) and
2.0mLDMF, stirring is to being completely dissolved.2 μ L mixed solutions drop is drawn on being suspended from the above platform of isopropanol liquid level in silicon base,
Beaker (100mL) is sealed, is placed in 20 DEG C of environment, the full-inorganic perovskite nanometer of favorable dispersibility can be obtained after 12h
Line (CsPbBr3).
Such as Fig. 2, full-inorganic perovskite nano wire good dispersion made from the present embodiment, pattern is uniform, the length is 6.0 ~
12.0μm。
Embodiment 3
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr2I.In preparation method, lead halide is selected
The PbBr of 0.002mmol2, caesium halide selects the CsI of 0.002mmol, remaining step is same as Example 1.
Full-inorganic perovskite nano wire (CsPbBr made from the present embodiment2I) dispersibility, pattern and length and embodiment 1
It is close.
Embodiment 4
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr3.In preparation method, lead halide and caesium halide are added
Amount is 0.5mmol, remaining step is same as Example 1.
Full-inorganic perovskite nano wire (CsPbBr made from the present embodiment3) dispersibility, pattern and length and 2 phase of embodiment
Closely.
Embodiment 5
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr3.In preparation method, DMF is changed to dimethyl sulfoxide,
Isopropanol is changed to normal propyl alcohol, and reaction temperature is 17 DEG C, and the reaction time is for 24 hours that remaining step is same as Example 1.
Full-inorganic perovskite nano wire (CsPbBr made from the present embodiment3) dispersibility, pattern and length and 1 phase of embodiment
Closely.
Embodiment 6
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr3.In preparation method, isopropanol is changed to n-butanol,
Reaction temperature is 25 DEG C, and substrate selects quartz plate, remaining step is same as Example 1.
Full-inorganic perovskite nano wire (CsPbBr made from the present embodiment3) dispersibility, pattern and length and 1 phase of embodiment
Closely.
Embodiment 7
The present embodiment provides a kind of full-inorganic perovskite nano wire CsPbBr3.In preparation method, isopropanol is changed to hexamethylene,
Substrate selects ITO, remaining step is same as Example 1.
Full-inorganic perovskite nano wire (CsPbBr made from the present embodiment3) dispersibility, pattern and length and 1 phase of embodiment
Closely.
Those of ordinary skill in the art will understand that embodiment here be to help reader understand it is of the invention
Principle, it should be understood that protection scope of the present invention is not limited to such specific embodiments and embodiments.This field it is common
Technical staff disclosed the technical disclosures can make the various various other tools for not departing from essence of the invention according to the present invention
Body variations and combinations, these variations and combinations are still within the scope of the present invention.
Claims (10)
1. a kind of full-inorganic perovskite nano wire CsPbX2The preparation method of Y, which comprises the steps of:
S1: by PbX2Solvent A, which is dissolved in, with CsY forms mixed solution；Wherein, X, Y are halogen；The solvent A is dimethyl sulfoxide
Or one or both of dimethylformamide；
S2: mixed solution described in S1 is coated in substrate, and substrate is placed in the closed environment of solvent B volatilization atmosphere in 17
At ~ 25 DEG C stand 12 ~ for 24 hours to get the full-inorganic perovskite nano wire CsPbX of good dispersion2Y；The solvent B be isopropanol,
One or more of normal propyl alcohol, n-butanol or hexamethylene.
2. full-inorganic perovskite nano wire CsPbX according to claim 12The preparation method of Y, which is characterized in that described X, Y
It is each independently selected from Cl, Br or I；And X, Y one of them be Cl when, another is not I.
3. full-inorganic perovskite nano wire CsPbX according to claim 22The preparation method of Y, which is characterized in that the X and Y
It is Cl, Br or I.
4. full-inorganic perovskite nano wire CsPbX according to claim 12The preparation method of Y, which is characterized in that mixed described in S1
Close PbX in solution2Concentration be 0.001 ~ 0.25mol/L, the molar ratio of Pb ion and Cs ion is 1:1.
5. full-inorganic perovskite nano wire CsPbX according to claim 12The preparation method of Y, which is characterized in that described in S1
Solvent A is dimethylformamide.
6. full-inorganic perovskite nano wire CsPbX according to claim 12The preparation method of Y, which is characterized in that described in S2
Solvent B is isopropanol.
7. full-inorganic perovskite nano wire CsPbX according to claim 12The preparation method of Y, which is characterized in that described in S2
Substrate is silicon wafer, quartz plate or ITO.
8. a kind of full-inorganic perovskite nano wire CsPbX2Y, which is characterized in that pass through any preparation method of claim 1 ~ 7
It obtains.
9. full-inorganic perovskite nano wire CsPbX according to claim 82Y, which is characterized in that the full-inorganic perovskite is received
Rice noodles CsPbX2Y length is 1.5 ~ 12 μm.
10. the full-inorganic perovskite nano wire CsPbX of claim 8 or 92Application of the Y in photodetector or laser.
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Cited By (5)
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| CN109980037A (en) * | 2019-03-07 | 2019-07-05 | 武汉大学 | Full-inorganic perovskite micron chip, Schottky type UV photodetector and preparation method |
| CN111139518A (en) * | 2019-12-23 | 2020-05-12 | 大连理工大学 | Preparation method of air-stable all-inorganic mixed halogen perovskite nanowire |
| CN113186600A (en) * | 2021-04-27 | 2021-07-30 | 上海大学 | All-photon password primitive preparation method based on high-flux perovskite micro-single crystal array |
| CN113594396A (en) * | 2021-07-08 | 2021-11-02 | 浙江大学 | Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof |
| CN114958349A (en) * | 2022-05-24 | 2022-08-30 | 成都大学 | Preparation method and application of all-inorganic perovskite scintillator nanowire array |
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| CN109980037A (en) * | 2019-03-07 | 2019-07-05 | 武汉大学 | Full-inorganic perovskite micron chip, Schottky type UV photodetector and preparation method |
| CN111139518A (en) * | 2019-12-23 | 2020-05-12 | 大连理工大学 | Preparation method of air-stable all-inorganic mixed halogen perovskite nanowire |
| CN113186600A (en) * | 2021-04-27 | 2021-07-30 | 上海大学 | All-photon password primitive preparation method based on high-flux perovskite micro-single crystal array |
| CN113594396A (en) * | 2021-07-08 | 2021-11-02 | 浙江大学 | Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof |
| CN113594396B (en) * | 2021-07-08 | 2022-08-05 | 浙江大学 | Solvent atmosphere controlled perovskite in-situ film forming method and product and application thereof |
| CN114958349A (en) * | 2022-05-24 | 2022-08-30 | 成都大学 | Preparation method and application of all-inorganic perovskite scintillator nanowire array |
| CN114958349B (en) * | 2022-05-24 | 2024-01-26 | 成都大学 | Preparation method and application of all-inorganic perovskite scintillator nanowire array |
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