CN109408408A - A kind of method of flash block condition management table valid memory access in flash memory device - Google Patents
A kind of method of flash block condition management table valid memory access in flash memory device Download PDFInfo
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- CN109408408A CN109408408A CN201811245068.0A CN201811245068A CN109408408A CN 109408408 A CN109408408 A CN 109408408A CN 201811245068 A CN201811245068 A CN 201811245068A CN 109408408 A CN109408408 A CN 109408408A
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- Prior art keywords
- memory
- segmentation
- flash memory
- flash
- block
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7211—Wear leveling
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- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
Abstract
The invention discloses a kind of methods of flash block condition management table valid memory access in flash memory device, comprising the following steps: step 1: first confiring that the segmentation for using block at present；Step 2: the hit rate+1 of this segmentation；Step 3: with the presence or absence of this segmentation in confirmation memory, if so, directly terminating, if not, entering in next step；Step 4: being confirmed whether memory sections to write back to flash memory, if so, entering in next step, if not, skipping to step 6；Step 5: it is determined to write back the segmentation of flash memory according to hit rate；Step 6: reading from flash memory and using the relevant segmentation of block and is put into memory at present, the invention can effective management block condition management table, reduce the reading times of flash memory, avoid the loss of acceleration flash memory, execution efficiency is substantially improved.
Description
Technical field
The present invention relates to storage device technical field, there is flash block condition management table in specially a kind of flash memory device
The method for imitating access.
Background technique
Flash memory is non-volatile memory of long-life a kind of, data deletion be not as unit of single byte but
As unit of fixed block, block size is generally 256KB to 20MB, and flash memory is Electrical Erasable read-only memory
(EEPROM) mutation, flash memory unlike EEPROM, EEPROM can be deleted and be rewritten in byte-level rather than
Entire chip is erasable, and most of chip of flash memory needs block to wipe.
There is n block in flash memory, it is included as being not used or having used that each piece can have different state according to demand,
Used piece has a variety of different states according to different tasks again.Therefore it needs to record letter with a bulk state management table
Breath, after storage device power-off, the use shape for the block that can be rebuild in entire storage device through this bulk state management table
Condition.
Flash block condition management table will record in memory, when memory headroom is unable to satisfy the big of flash block condition management table
It is small, it will flash block condition management table to be cut into several segmentations, each segmentation records corresponding bulk state.
Memory is one of the ost important components in computer, it is the bridge linked up with CPU.All programs in computer
Operation all carry out in memory, therefore influence of the performance of memory to computer is very big.Memory is also referred to as memory
Reservoir, effect is for temporarily storing the operational data in CPU, and the data exchanged with external memories such as hard disks.Only
Want computer in operation, CPU will be transferred to the data for needing operation in memory and carry out operation, and CPU is again after the completion of operation
Result is sent out, the operation of memory also determines the stable operation of computer, and memory is by memory chip, circuit board, gold
The part such as finger composition.
Memory is also known as main memory, is the memory space of CPU energy directly addressing, is made of semiconductor devices.The characteristics of memory is
Access rate is fast.Memory is the main component in computer, it is for external memory.The program that we use usually, such as
Windows operating system, typewriting software, Games Software etc., are typically mounted on the external memory such as hard disk, but only this be cannot
Use its function, it is necessary to they be called in memory and run, could really use its function, we usually input a Duan Wen
Word, or a game is played, it all carrying out in memory in fact, memory is exactly the place of temporary storage program and data, than
Such as when we are when using WPS processing manuscript, when you knock in character on keyboard, it is just stored into memory, when you select
When deposit, the data in memory can just be stored into hard disk.
That segmentation of the block accessed at present can be only saved in memory, other segmentations are stored in flash memory, when being segmented in memory
Uncorrelated with the block used now, the content for needing segmentation to update is stored in flash memory, and relevant segmentation from flash memory
Taking-up is put into memory, and this method increases the number that flash memory reads write-in, be easy to cause the loss of flash memory and increase read-write when
Between, it would therefore be highly desirable to which a kind of improved technology solves the problems, such as this in the presence of the prior art.
Summary of the invention
The purpose of the present invention is to provide a kind of method of flash block condition management table valid memory access in flash memory device,
Can effective management block condition management table, reduce the reading times of flash memory, avoid the loss for accelerating flash memory, be substantially improved and execute effect
Rate, to solve the problems mentioned in the above background technology.
To achieve the above object, the invention provides the following technical scheme: flash memory bulk state pipe in a kind of flash memory device
The method for managing table valid memory access, comprising the following steps:
Step 1: the segmentation for using block at present is first confirmd that；
Step 2: the hit rate+1 of this segmentation；
Step 3: with the presence or absence of this segmentation in confirmation memory, if so, directly terminating, if not, entering in next step；
Step 4: being confirmed whether memory sections to write back to flash memory, if so, entering in next step, if not, skipping to step
Six；
Step 5: it is determined to write back the segmentation of flash memory according to hit rate；
Step 6: segmentation relevant to block is used at present is read from flash memory and is put into memory.
Preferably, several segmentations are stored in step 3 in memory and which is determined according to segmentation correlation hit rate height
A segmentation will be written back in flash memory.
Preferably, there are several blocks in step 4 in memory.
Preferably, block has different state according to demand in step 1, and block is included as being not used or having used, and has made
Block has a variety of different states according to different tasks again.
Compared with prior art, the beneficial effects of the present invention are:
Can effective management block condition management table, reduce the reading times of flash memory, avoid the loss for accelerating flash memory, execution is substantially improved
Efficiency.
Detailed description of the invention
Fig. 1 is flow diagram of the present invention.
Fig. 2 is two demonstration schematic diagrames for being segmented to replace segmentation of storage in memory.
Fig. 3 is the demonstration schematic diagram of traditional approach replacement segmentation.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution: there is flash block condition management table in a kind of flash memory device
The method for imitating access, comprising the following steps:
Step 1: the segmentation for using block at present is first confirmd that；
Step 2: the hit rate+1 of this segmentation；
Step 3: with the presence or absence of this segmentation in confirmation memory, if so, directly terminating, if not, entering in next step；
Step 4: being confirmed whether memory sections to write back to flash memory, if so, entering in next step, if not, skipping to step
Six；
Step 5: it is determined to write back the segmentation of flash memory according to hit rate；
Step 6: segmentation relevant to block is used at present is read from flash memory and is put into memory.
Several segmentations are stored in memory and determine which segmentation will be written back into according to segmentation correlation hit rate height
There are several blocks into flash memory, in memory, there is different state according to demand, block is included as being not used or having used,
The block used has a variety of different states according to different tasks again.
Embodiment one, as shown in Fig. 2, existing will store two segmentations in memory, according to segmentation correlation hit rate height come certainly
Which fixed segmentation will be written back in flash memory, if it is segmentation a- > segmentation c- > iterative cycles are this always by segmentation a- > segmentation d
Situation, first storage segmentation a in memory, then storage segmentation c, because segmentation a does not need to take out from flash memory in memory, followed by
Segmentation c is write back in flash memory according to hit rate, segmentation d reading is then placed on memory, execution efficiency is substantially improved.
Embodiment two, as shown in figure 3, traditional approach: if the relevant bulk state management table segmenting of block uses sequence difference
Be: iterative cycles, the process operated in this way just will become segmentation a and be written to sudden strain of a muscle segmentation a- > segmentation c- > segmentation a- > segmentation d always
It deposits, segmentation c is read from flash memory, segmentation c is then written to flash memory, segmentation a is read from flash memory, then segmentation a write-in
To flash memory, segmentation d is then read memory, is repeated always, increase flash memory in this way reads the number being written, the damage of flash memory
Consumption is high compared with embodiment one, and the time of read-write is long compared with embodiment one.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (4)
1. a kind of method of flash block condition management table valid memory access in flash memory device, it is characterised in that: including following step
It is rapid:
Step 1: the segmentation for using block at present is first confirmd that；
Step 2: the hit rate+1 of this segmentation；
Step 3: with the presence or absence of this segmentation in confirmation memory, if so, directly terminating, if not, entering in next step；
Step 4: being confirmed whether memory sections to write back to flash memory, if so, entering in next step, if not, skipping to step
Six；
Step 5: it is determined to write back the segmentation of flash memory according to hit rate；
Step 6: segmentation relevant to block is used at present is read from flash memory and is put into memory.
2. the method for flash block condition management table valid memory access in a kind of flash memory device according to claim 1,
It is characterized in that: storing several segmentations in the step 3 in memory and which is determined according to segmentation correlation hit rate height
Segmentation will be written back in flash memory.
3. the method for flash block condition management table valid memory access in a kind of flash memory device according to claim 1,
It is characterized in that: having several blocks in the step 4 in memory.
4. the method for flash block condition management table valid memory access in a kind of flash memory device according to claim 1,
Be characterized in that: block has different state according to demand in the step 1, and described piece is included as being not used or having used,
The block used has a variety of different states according to different tasks again.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811245068.0A CN109408408A (en) | 2018-10-24 | 2018-10-24 | A kind of method of flash block condition management table valid memory access in flash memory device |
| PCT/CN2018/115515 WO2020082454A1 (en) | 2018-10-24 | 2018-11-14 | Method for effectively accessing flash block state management table in flash storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811245068.0A CN109408408A (en) | 2018-10-24 | 2018-10-24 | A kind of method of flash block condition management table valid memory access in flash memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109408408A true CN109408408A (en) | 2019-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811245068.0A Withdrawn CN109408408A (en) | 2018-10-24 | 2018-10-24 | A kind of method of flash block condition management table valid memory access in flash memory device |
Country Status (2)
| Country | Link |
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| CN (1) | CN109408408A (en) |
| WO (1) | WO2020082454A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102207909B (en) * | 2011-05-31 | 2014-03-26 | 孟小峰 | Cost-based buffer area replacement method of flash memory database |
| CN104461393B (en) * | 2014-12-09 | 2017-05-17 | 华中科技大学 | Mixed mapping method of flash memory |
| CN106445839A (en) * | 2016-10-09 | 2017-02-22 | 国云科技股份有限公司 | High performance document storage system and method thereof |
| CN107168888B (en) * | 2017-05-19 | 2020-06-02 | 惠州佰维存储科技有限公司 | Mapping table management method and system of Nand flash memory |
| CN107832013B (en) * | 2017-11-03 | 2019-10-25 | 中国科学技术大学 | A method of management solid-state hard disc mapping table |
-
2018
- 2018-10-24 CN CN201811245068.0A patent/CN109408408A/en not_active Withdrawn
- 2018-11-14 WO PCT/CN2018/115515 patent/WO2020082454A1/en active Application Filing
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| Publication number | Publication date |
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| WO2020082454A1 (en) | 2020-04-30 |
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Application publication date: 20190301 |
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