CN109407210B - Polarized wave waveguide transmission coupling device based on in-plane heterojunction and preparation method - Google Patents
Polarized wave waveguide transmission coupling device based on in-plane heterojunction and preparation method Download PDFInfo
- Publication number
- CN109407210B CN109407210B CN201811336502.6A CN201811336502A CN109407210B CN 109407210 B CN109407210 B CN 109407210B CN 201811336502 A CN201811336502 A CN 201811336502A CN 109407210 B CN109407210 B CN 109407210B
- Authority
- CN
- China
- Prior art keywords
- graphene
- hbn
- layer
- plane heterojunction
- polarized wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a polarized wave waveguide transmission coupling device based on an in-plane heterojunction, which has adjustable transmission coupling efficiency and sequentially comprises a substrate, a dielectric layer and a graphene/hBN in-plane heterojunction film from bottom to top; the method can change the momentum matching conditions of the graphene plasmon polariton polarized wave and the hBN phonon polarized wave, so that the transmission coupling efficiency between the polarized waves is regulated and controlled; when the Fermi of the graphene is regulated and controlled to reach the matching point of the two polarization fluctuation amounts, the coupling efficiency between the polarization waves can reach 100%, and 100% transmission is realized.
Description
Technical Field
The invention relates to the technical field of photonic integrated circuits, in particular to a device and a method for transmission coupling of plasmon polarized waves and phonon polarized wave waveguides on a graphene/hBN in-plane heterojunction.
Background
The photonic integrated circuit can overcome the optical diffraction limit, greatly reduces the device scale, can realize integration on the nanometer scale, simultaneously carries out information transmission by means of optical signals, greatly reduces the loss in the transmission process, has great potential and advantages for showing the functions of interconnected optical paths, optical calculation and the like, and is possibly an important support for replacing a new generation of information technology of an integrated circuit.
Graphene is a two-dimensional crystal composed of a single layer of carbon atoms, and graphites of ten layers or less are all considered to be graphene. Has excellent electrical and optical characteristics and the like, and has great application potential in the fields of photoelectric devices and photonic integrated circuits. The existing graphene can support a plasmon polariton polarized wave mode, which is formed by coupling incident photons in a free space and electrons on the graphene. The graphene plasmons can bind light in space on a nanoscale, so that a high-local electromagnetic waveguide mode is realized, and a photonic integrated circuit with a smaller size can be realized. The graphene plasmon polariton polarized wave is also easy to regulate and control, and the Fermi energy is changed by adding gate voltage or a chemical doping mode. The graphene conductivity can be given by the Kubo equation, and the dielectric function is calculated from the conductivity. (Nanoscale,2017,9(39):14998-
hBN (boron nitride) is a layered van der waals crystal that is coupled together by van der waals weak interaction forces from individual planes of atoms. hBN is a natural low-loss infrared hyperbolic material, and a residual ray band (1370--1) And a lower residual ray band (780- & lt 830 cm.)-1) The internal support phonon polarization wave. Phonon polarized waves are formed by coupling photons in free space with phonons in hBN, which has the advantage of low loss long distance transmission. The electromagnetic waveguide mode of the photonic crystal structure depends on the thickness of hBN, the material is mainly distributed in the body and on the surface, light can be bound in a nanoscale, and the photonic integrated circuit with a smaller size can be realized. The dielectric function of hBN is calculated by first principles derivation, as can be seen (Nano letters,2015,15(5): 3172-.
The graphene/hBN in-plane heterojunction can be grown by means of chemical vapor deposition, and the preparation of the in-plane heterojunction lays a material foundation for realizing a nano integrated circuit and a nano integrated photon loop with smaller scale in the future. However, waveguide mode analysis and guided wave polarization have presented significant challenges on the atomic scale of several layers or even a single layer. Therefore, the method for efficiently regulating and controlling the transmission coupling of the polarized wave waveguide on the graphene/hBN in-plane heterojunction is invented.
Disclosure of Invention
The technical scheme of the invention is as follows: a polarized wave waveguide transmission coupling device based on an in-plane heterojunction is adjustable in transmission coupling efficiency and comprises a substrate, a dielectric layer and a graphene/hBN in-plane heterojunction film from bottom to top;
the dielectric layer is deposited on the substrate, and the graphene/hBN in-plane heterojunction film covers the dielectric layer;
and arranging a bias voltage source, wherein one pole of the bias voltage source is added on the substrate, and the other pole of the bias voltage source is added on the graphene.
Preferably, the graphene/hBN in-plane heterojunction thin film is prepared by a chemical vapor deposition method, and a polarization wave supported on the graphene/hBN in-plane heterojunction thin film can be excited and detected by a scattering type near-field optical microscope or a prism coupling mode.
Preferably, the material of the substrate comprises Si for serving as a conductive gate layer;
the dielectric layer is made of materials including SiO2, MgF2, CaF2, BaF2 and air materials, and the thickness range of the dielectric layer is 10-3000 nm;
the metal material of the bias voltage source includes, but is not limited to, gold, silver, copper, aluminum, platinum single metal layer, alloy layer or stacked structure of multiple single metal layers or alloy layers, wherein the width and length of the metal material range from 10nm to 2 × 107nm and a thickness of 5 nm-3 × 106nm。
Preferably, different bias voltages are designed, so that the dispersion relation between graphene Fermi energy and graphene plasmon polarization waves is changed, the momentum matching condition of the graphene plasmon polarization waves and hBN phonon polarization waves is changed, and the transmission coupling efficiency between the polarization waves is artificially regulated and controlled.
Preferably, when the mobility of the graphene is 2000cm2Vs, the thickness of hBN is 1nm, and 1377cm is selected in the frequency band of hBN supporting phonon polarized waves-1And 1385cm-1The polarization wave coupling transmittance is greatly modulated by changing the bias voltage on the graphene.
Preferably, at a frequency of 1377cm-1The supported coupling transmission between polarized waves is modulated from 0% to 100%, with fermi energy varying from 0.1eV to 0.6 eV.
A method for preparing the polarized wave waveguide transmission coupling device based on the in-plane heterojunction specifically comprises the following steps;
(1) manufacturing a dielectric layer: preparing a dielectric layer film on a substrate as a dielectric substrate by using an electron beam evaporation, atomic layer deposition or molecular beam epitaxial growth method, wherein the substrate is made of silicon;
(2) preparing a graphene/hBN film: obtaining the graphene/hBN in-plane heterojunction film by a standard chemical vapor deposition method;
(3) transferring the graphene/hBN in-plane heterojunction film: transferring the graphene/hBN in-plane heterojunction film prepared by the chemical vapor deposition method to the prepared dielectric layer;
(4) manufacturing a power electrode layer: and preparing the power supply electrode layer by using a method of ultraviolet lithography, electron beam exposure, electron beam evaporation or thermal evaporation or magnetron sputtering or molecular beam epitaxial growth.
The invention has the beneficial effects that: according to the polarized wave waveguide transmission coupling device based on the in-plane heterojunction, under the excitation detection of a scattering type near-field optical microscope, by designing different bias voltages, the dispersion relation between graphene Fermi energy and graphene plasmon polarized waves is changed, so that the momentum matching condition of the graphene plasmon polarized waves and hBN phonon polarized waves is changed, and the transmission coupling efficiency between the polarized waves is regulated. The invention can realize the transmission coupling of the polarized wave waveguide on the heterojunction in the control surface with wide frequency and high efficiency, and provides good prospect for miniaturized optical waveguide devices and nano integrated photon loops.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
Further objects, features and advantages of the present invention will become apparent from the following description of embodiments of the invention, with reference to the accompanying drawings, in which:
fig. 1 is a front view in longitudinal section of an in-plane heterojunction-based polarized wave waveguide transmission coupling device according to the present invention.
Fig. 2 is a flow chart of a method for manufacturing the polarized wave waveguide transmission coupling device based on the in-plane heterojunction according to the present invention.
Fig. 3a to 3c are structural distribution diagrams of the graphene layer and hBN layer according to the present invention.
Fig. 4a to 4c are graphs showing the dispersion relation and transmittance relation of two polarized waves according to the present invention.
Fig. 5 shows a performance display of the transmission coupling method of the in-plane heterojunction-based polarized wave waveguide transmission coupling device of the present invention.
Fig. 6a to 6b are physical mechanical diagrams illustrating the method for polarization waveguide transmission coupling based on in-plane heterojunction according to the present invention.
Fig. 7 shows the performance of the in-plane heterojunction-based guided transmission coupling method for polarized waves according to the present invention over a wide frequency range.
Detailed Description
The objects and functions of the present invention and methods for accomplishing the same will be apparent by reference to the exemplary embodiments. However, the present invention is not limited to the exemplary embodiments disclosed below; it can be implemented in different forms. The nature of the description is merely to assist those skilled in the relevant art in a comprehensive understanding of the specific details of the invention.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals denote the same or similar parts, or the same or similar steps.
Fig. 1 is a front view, in longitudinal section, of an in-plane heterojunction-based polarized wave waveguide transmission coupling device according to the present invention.
As shown in fig. 1, the polarized wave waveguide transmission coupling device based on the in-plane heterojunction includes a substrate 101, a dielectric layer 102, and a graphene/hBN in-plane heterojunction film 103, which are sequentially disposed from bottom to top;
the graphene/hBN in-plane heterojunction thin film 103 comprises a graphene layer 103a and an hBN layer 103b, wherein the graphene layer 103a and the hBN layer 103b are distributed in a mode of a Chinese character 'ri' shape, a Chinese character 'hui' shape and the like.
Specifically, fig. 3a to 3c show structural distribution diagrams of the graphene layer and hBN layer according to the present invention, as shown in fig. 3a, the graphene/hBN in-plane heterojunction thin film 103 includes a graphene layer 103a and a hBN layer 103b, wherein the graphene layer 103a and the hBN layer 103b are distributed in a "japanese" shape;
as shown in fig. 3b and fig. 3c, the graphene/hBN in-plane heterojunction thin film 103 comprises a graphene layer 103a and a hBN layer 103b, wherein the graphene layer 103a and the hBN layer 103b are distributed in a zigzag-like manner, and the hBN layer 103b has a circular, polygonal or other structure.
The dielectric layer 102 is deposited on the substrate 101, and the graphene/hBN in-plane heterojunction film 103 covers the dielectric layer 102.
A bias voltage source 104 is provided, wherein one pole of the bias voltage source 104 is applied to the substrate 101 and the other pole is applied to the graphene layer 103 a.
The graphene/hBN in-plane heterojunction film 103 is prepared by chemical vapor deposition, and a polarized wave supported on the graphene/hBN in-plane heterojunction film can be excited and detected by a scattering type near-field optical microscope.
The substrate 101 is made of Si and used as a conductive gate layer;
the dielectric layer 102 is made of materials such as SiO2, MgF2, CaF2, BaF2, air and the like, and the thickness range is 10 nm-3000 nm;
the metal material of the electric source of the bias voltage source 104 includes, but is not limited to, a single metal layer, an alloy layer or a stacked structure of multiple single metal layers or alloy layers of gold, silver, copper, aluminum, platinum, etc., and the width and length ranges from 10nm to 2 × 107nm and a thickness of 5 nm-3 × 106nm。
Fig. 2 is a flow chart of a method for manufacturing the polarized wave waveguide transmission coupling device based on the in-plane heterojunction according to the present invention. The method comprises the following steps:
(1) manufacturing a dielectric layer: and preparing a dielectric layer film on the substrate as a dielectric substrate by using an electron beam evaporation method, an atomic layer deposition method or a molecular beam epitaxial growth method.
(2) Preparing a graphene/hBN in-plane heterojunction film: and obtaining the graphene/hBN in-plane heterojunction film by a standard chemical vapor deposition method.
(4) Transferring the graphene/hBN in-plane heterojunction film: and transferring the graphene/hBN in-plane heterojunction thin film grown by chemical vapor deposition onto the dielectric layer prepared above.
(5) Manufacturing a power electrode metal layer: and preparing the power supply electrode layer by using a method of ultraviolet lithography, electron beam exposure, electron beam evaporation or thermal evaporation or magnetron sputtering or molecular beam epitaxial growth.
The following is to perform simulation experiment and calculation on the device for transmitting and coupling the polarized wave waveguide on the heterojunction in the control surface, and further verify the performance of the device.
Fig. 4a to 4b are graphs showing the dispersion relation and transmittance relation of two polarized waves according to the present invention, wherein specifically, fig. 4a is a graph showing the dispersion relation of two polarized waves, where the crossing point of the two polarized waves reaches momentum matching, the coupling transmission efficiency is the highest, and the momentum mismatch is more serious and the coupling transmission efficiency is reduced when the crossing point is far away from the crossing point, and as can be seen in fig. 4b, when the transmittance of P2 reaches 100% at the highest, the crossing point in fig. 4a is corresponding, and the transmittance is gradually reduced when the crossing point is far away from the P2 point, that is, the position far away from the momentum matching; in FIG. 4b, the P3 point is far away from the band supporting phonon polarized waves (1370-1610 cm)-1) Therefore, the graphene plasmon polarization wave cannot be transmission-coupled into hBN, and the transmittance is 0%. The position P1 is only the normal coupling transmission, so the actual coupling process at the above point P1-P3 can clearly reflect from fig. 4 c.
Fig. 5 is a performance display of the polarization waveguide transmission coupling on the heterojunction in the high-efficiency control plane according to the present invention. According to the invention, simulation experiment calculation is adopted, the plasmon polarization wave is excited on the graphene layer and is propagated to the boundary of graphene/hBN, part of energy is coupled (transmitted) to hBN to form phonon polarization wave, and part of the phonon polarization wave is reflected back. Wherein the simulation calculation is performed based on a finite element theoretical basis, and the polarization wave property depends on the optical dielectric function of the graphene and the hBN. Wherein, the grapheneMobility 2000cm2The thickness of the hBN is 1 nm. Supporting phonon polarization wave frequency band (1370-1610cm in upper residual ray band) of hBN-1) Randomly select 1377cm-1And 1385cm-1The frequency of the excitation light source changes the bias voltage on the graphene, namely the Fermi energy of the graphene, and obviously the coupling transmittance between the polarized waves is greatly modulated. At a frequency of 1377cm-1The supported coupling transmission between polarized waves is modulated from 0% to 100%, with fermi energy varying from 0.1eV to 0.6 eV.
Fig. 6a to 6b are physical mechanisms of the waveguide transmission coupling method based on the polarized wave on the heterojunction in the control plane. Fig. 6a shows the polarization fluctuation amount distribution of the graphene plasmon polarization wave and the hBN phonon polarization wave corresponding to each other at different voltages. Fig. 6b shows the two polarized waves at different voltages with momentum matching. Wherein, the coupling transmittance between the polarized waves is proportional to the momentum matching condition of the two. When the two polarized waves have perfectly matched momenta, the coupling transmission will reach 100%. The coupling transmittance will be smaller and smaller as the momentum mismatch condition is more severe.
Fig. 7 is a performance display of the waveguide transmission coupling method based on the polarized wave on the heterojunction in the control plane in the wide frequency range. According to a physical mechanism of matching of two polarization fluctuation quantities, a phonon polarization dispersion relation omega-q (black solid line) is utilized, then graphene Fermi energy is modulated, a graphene plasmon dispersion relation is modulated, and an intersection point of momentum matching of the two is displayed on a real point in a graph. It was found that it is theoretically possible to detect the support band of hBN phonon polarized wave (1370-1610 cm)-1) In the above, the Fermi energy of the graphene can be regulated and controlled to obtain two polarization fluctuation amount matching points, so that 100% coupling transmission can be achieved. Therefore, the invention can realize the transmission coupling of the polarized wave waveguide on the heterojunction in the control surface with wide frequency and high efficiency, and provides good prospect for miniaturized optical waveguide devices and nano integrated photon loops.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (7)
1. A polarized wave waveguide transmission coupling device based on an in-plane heterojunction comprises a substrate, a dielectric layer and a graphene/hBN in-plane heterojunction film which are arranged from bottom to top in sequence;
the dielectric layer is deposited on the substrate, the graphene/hBN in-plane heterojunction film covers the dielectric layer, the graphene/hBN in-plane heterojunction film comprises a graphene layer and an hBN layer, and the graphene layer and the hBN layer are distributed in a mode of a Chinese character 'ri' shape or a Chinese character 'hui' shape;
and arranging a bias voltage source, wherein one pole of the bias voltage source is added on the substrate, and the other pole of the bias voltage source is added on the graphene.
2. The in-plane heterojunction based polarized wave waveguide transmission coupling device of claim 1, wherein the graphene/hBN in-plane heterojunction thin film is prepared by chemical vapor deposition, and the polarized wave supported on the graphene/hBN in-plane heterojunction thin film can be excited and detected by a scattering type near-field optical microscope.
3. The in-plane heterojunction-based polarized wave waveguide transmission-coupling device according to claim 1,
the material of the substrate comprises Si used as a conductive gate layer;
the dielectric layer is made of materials including SiO2, MgF2, CaF2, BaF2 and air materials, and the thickness range of the dielectric layer is 10-3000 nm;
the metal material of the bias voltage source includes, but is not limited to, gold, silver, copper, aluminum, platinum single metal layer, alloy layer or stacked structure of multiple single metal layers or alloy layers, wherein the width and length of the metal material range from 10nm to 2 × 107nm and a thickness of 5 nm-3 × 106nm。
4. The polarized wave waveguide transmission coupling device based on the in-plane heterojunction as claimed in claim 1, wherein by designing different bias voltages, the dispersion relation between graphene fermi energy and graphene plasmon polarized waves is changed, the momentum matching condition between the graphene plasmon polarized waves and hBN phonon polarized waves is changed, and the transmission coupling efficiency between the polarized waves is regulated.
5. The in-plane heterojunction based polarized wave waveguide transmission coupling device according to claim 4, wherein the mobility of graphene is 2000cm2Vs, the thickness of hBN is 1nm, and 1377cm is selected in the frequency band of hBN supporting phonon polarized waves-1And 1385cm-1The polarization wave coupling transmittance is greatly modulated by changing the bias voltage on the graphene.
6. The in-plane heterojunction based polarized wave waveguide transmission coupling device according to claim 5, wherein the frequency is 1377cm-1The supported coupling transmission between polarized waves is modulated from 0% to 100%, with fermi energy varying from 0.1eV to 0.6 eV.
7. A method of manufacturing the polarized wave waveguide transmission-coupling device based on the in-plane heterojunction as claimed in claim 1,
the method specifically comprises the following steps;
(1) manufacturing a dielectric layer: preparing a dielectric layer film on a substrate as a dielectric substrate by using an electron beam evaporation, atomic layer deposition or molecular beam epitaxial growth method, wherein the substrate is made of silicon;
(2) preparing a graphene/hBN film: obtaining the graphene/hBN in-plane heterojunction film by a standard chemical vapor deposition method;
(3) transferring the graphene/hBN in-plane heterojunction film: transferring the graphene/hBN in-plane heterojunction film prepared by the chemical vapor deposition method to the prepared dielectric layer;
(4) manufacturing a power electrode layer: and preparing the power supply electrode layer by using a method of ultraviolet lithography, electron beam exposure, electron beam evaporation or thermal evaporation or magnetron sputtering or molecular beam epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811336502.6A CN109407210B (en) | 2018-11-12 | 2018-11-12 | Polarized wave waveguide transmission coupling device based on in-plane heterojunction and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811336502.6A CN109407210B (en) | 2018-11-12 | 2018-11-12 | Polarized wave waveguide transmission coupling device based on in-plane heterojunction and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109407210A CN109407210A (en) | 2019-03-01 |
| CN109407210B true CN109407210B (en) | 2020-09-25 |
Family
ID=65472568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811336502.6A Active CN109407210B (en) | 2018-11-12 | 2018-11-12 | Polarized wave waveguide transmission coupling device based on in-plane heterojunction and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109407210B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111257599B (en) * | 2019-12-13 | 2022-04-26 | 国家纳米科学中心 | Near-field optical characterization method for charge transfer between heterojunction layers |
| CN113666364B (en) * | 2021-08-26 | 2023-04-28 | 中国科学院上海微系统与信息技术研究所 | Dry transfer method of graphene continuous film |
| CN114679152B (en) * | 2022-03-25 | 2023-04-28 | 电子科技大学 | Dynamically adjustable graphene phonon waveguide and method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561028A (en) * | 2017-06-30 | 2018-01-09 | 国家纳米科学中心 | For strengthening the metallic graphite carbon alkene phasmon device and preparation method of infrared spectrum detection |
| CN107634089A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院上海微系统与信息技术研究所 | A kind of graphene selenizing niobium superconduction heterojunction device and preparation method thereof |
| CN107740071A (en) * | 2017-11-13 | 2018-02-27 | 南京航空航天大学 | The preparation method of hetero-junctions in a kind of graphene hexagonal boron nitride face |
| CN109166933A (en) * | 2018-08-31 | 2019-01-08 | 同天（福建）石墨烯科技有限公司 | A kind of plasmon switch based on graphene |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102027042B1 (en) * | 2017-12-27 | 2019-09-30 | 울산과학기술원 | Array of graphene qunantum dots embedded in hexagonal boron nitride and manufacturing method for the same, electronic device comprising for the same |
-
2018
- 2018-11-12 CN CN201811336502.6A patent/CN109407210B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107561028A (en) * | 2017-06-30 | 2018-01-09 | 国家纳米科学中心 | For strengthening the metallic graphite carbon alkene phasmon device and preparation method of infrared spectrum detection |
| CN107634089A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院上海微系统与信息技术研究所 | A kind of graphene selenizing niobium superconduction heterojunction device and preparation method thereof |
| CN107740071A (en) * | 2017-11-13 | 2018-02-27 | 南京航空航天大学 | The preparation method of hetero-junctions in a kind of graphene hexagonal boron nitride face |
| CN109166933A (en) * | 2018-08-31 | 2019-01-08 | 同天（福建）石墨烯科技有限公司 | A kind of plasmon switch based on graphene |
Non-Patent Citations (1)
| Title |
|---|
| Far-Field Spectroscopy and Near-Field Optical Imaging of Coupled Plasmon–Phonon Polaritons in 2D van der Waals Heterostructures;Xiaoxia Yang等;《ADVANCED MATERIALS》;20160218;2931-2938 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109407210A (en) | 2019-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cuevas et al. | Radiative heat transfer | |
| Lee et al. | Hyperbolic metamaterials: fusing artificial structures to natural 2D materials | |
| CN109407210B (en) | Polarized wave waveguide transmission coupling device based on in-plane heterojunction and preparation method | |
| Parzefall et al. | Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions | |
| Correas-Serrano et al. | Plasmon canalization and tunneling over anisotropic metasurfaces | |
| Xiao et al. | Tunable anisotropic absorption in hyperbolic metamaterials based on black phosphorous/dielectric multilayer structures | |
| Gadalla et al. | Design, optimization and fabrication of a 28.3 THz nano-rectenna for infrared detection and rectification | |
| Li et al. | Modulation of mid-infrared light using graphene-metal plasmonic antennas | |
| Sprengers et al. | Waveguide superconducting single-photon detectors for integrated quantum photonic circuits | |
| Feng et al. | Near atomically smooth alkali antimonide photocathode thin films | |
| Rybczynski et al. | Subwavelength waveguide for visible light | |
| CN106405718B (en) | A kind of automatically controlled terahertz polarization piece and application method based on graphene grid band structure | |
| In et al. | Control over electron–phonon interaction by Dirac plasmon engineering in the Bi2Se3 topological insulator | |
| Neuner et al. | Efficient infrared thermal emitters based on low-albedo polaritonic meta-surfaces | |
| Huang et al. | Dynamical tuning of terahertz meta-lens assisted by graphene | |
| Liu et al. | Lateral photovoltaic effect observed in nano Au film covered two-dimensional colloidal crystals | |
| Bora et al. | Plasmonic black metals in resonant nanocavities | |
| US20120206085A1 (en) | Carbon nanotube solar power collection device | |
| Awal et al. | An efficient plasmonic photovoltaic structure using silicon strip-loaded geometry | |
| Chorsi et al. | Topological materials for functional optoelectronic devices | |
| Ding et al. | Arbitrary waveguide bends using isotropic and homogeneous metamaterial | |
| Behera et al. | Plasmonic metamaterial based unified broadband absorber/near infrared emitter for thermophotovoltaic system based on hexagonally packed tungsten doughnuts | |
| Zhao et al. | Atomic-scale control of coherent thermal radiation | |
| Zou et al. | Spectral and angular characteristics of dielectric resonator metasurface at optical frequencies | |
| Sabri et al. | Genetically optimized dual-wavelength all-dielectric metasurface based on double-layer epsilon-near-zero indium-tin-oxide films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |