CN109405997A - Acoustic surface wave temperature sensor with photonic crystal - Google Patents
Acoustic surface wave temperature sensor with photonic crystal Download PDFInfo
- Publication number
- CN109405997A CN109405997A CN201710711047.2A CN201710711047A CN109405997A CN 109405997 A CN109405997 A CN 109405997A CN 201710711047 A CN201710711047 A CN 201710711047A CN 109405997 A CN109405997 A CN 109405997A
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- China
- Prior art keywords
- phonon crystal
- acoustic wave
- surface acoustic
- temperature sensors
- emission electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004038 photonic crystal Substances 0.000 title description 2
- 239000013078 crystal Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000037361 pathway Effects 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims 1
- 239000007772 electrode material Substances 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 230000009471 action Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052916 barium silicate Inorganic materials 0.000 description 1
- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical compound [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000010259 detection of temperature stimulus Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
- C23C28/3225—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only with at least one zinc-based layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/22—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects
- G01K11/26—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects of resonant frequencies
- G01K11/265—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of acoustic effects of resonant frequencies using surface acoustic wave [SAW]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- General Chemical & Material Sciences (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a phononic crystal surface acoustic wave temperature sensor. This phononic crystal surface acoustic wave temperature sensor includes: a substrate; the double-channel surface acoustic wave delay line structure is arranged on a substrate, the double channels comprise a sensitive channel and a reference channel, and each structure comprises an emitter, a phonon crystal and a receiver; and a silicon dioxide temperature compensation layer is grown on the reference channel based on the surface acoustic wave electrode material. The emitter adopts a divergent finger strip structure for improving insertion loss. The arranged compensation layer channel can effectively restrain the interference of other variables in the environment to the temperature.
Description
Technical field
The present invention relates to the detection of temperature sensor and field of structural design.
Background technique
Sensor decides the efficiency of entire Internet of things system as the bottom of Internet of things system and the key of information collection
And intelligence degree.Many scenes require to be monitored temperature, and temperature sensor is as important one in sensor family
Member has more and more important purposes.Compared with traditional temperature sensor, SAW Temperature Sensors not only can be with survey
Medium-tight contact is measured to realize the accurate measurement of temperature data, and the inquiry-feedback similar with radar system can also be used
Mechanism is wirelessly transferred data, and provides energy, this wireless nothing without sensing element in this transmission process
The senser element in source has more extensive development space.
SAW Temperature Sensors are very sensitive to external environment, and encapsulation is generally required when applied to temperature sensor,
But will affect after encapsulating to temperature-responsive time and corresponding precision, greatly weaken the accurate of SAW Temperature Sensors
Property and practicability.In order to weaken the influence encapsulated to SAW Temperature Sensors, we devise the sound with reference channel
Sub- crystal SAW Temperature Sensors.
Summary of the invention
The technical problem to be solved by the present invention is to be directed to the defect of background technique, by designing novel phonon crystal sound
Surface wave temperature sensor realizes the quick response to temperature.
The present invention in order to solve the above technical problems, the technical solution adopted is as follows:
The phonon crystal SAW Temperature Sensors that are based on include: substrate；The bilateral being placed on substrate says surface
Wave delay-line structure, binary channels include sensitive pathway and reference channel, each structure include emission electrode, photonic crystal structure,
Receiving electrode；Emission electrode uses divergent shape finger structure；It is different from sensitive pathway, there are also one layer on reference channel structure
Thick silica temperature compensating layer.
The device substrate is used as Piezoelectric Substrates using barium silicate, lithium niobate or quartz.
The dispersion angle of the emission electrode is between 0 ° to 60 °.The material of emission electrode and receiving electrode uses aluminium
Or golden material, width are the 1/4 of surface acoustic wave wavelength.The length of electrode is greater than 100 surface acoustic wave wavelength.The transmitting electricity
The distance between pole and receiving electrode are 100 surface acoustic wave wavelength.Here surface acoustic wave wavelength refers to surface acoustic wave device
Wavelength at part centre frequency.
For the phonon crystal using aluminium, copper or golden material, phonon crystal is cylindrical-shaped structure, and diameter is surface acoustic wave wave
Long 1/2, period are 1 surface acoustic wave wavelength, there is the phonon crystal in 50 periods on the direction of propagation.The height of phonon crystal is big
In 500 nanometers.
The silica temperature compensating layer is only grown on reference channel, and the thickness of growth is greater than 600 nanometers.Using
Magnetron sputtering chemical vapor deposition method is realized.
The invention adopts the above technical scheme compared with prior art, has following technical effect that
By designing the silica temperature compensating layer of a thickness on reference channel structure, it can effectively inhibit environment
In its dependent variable interfered caused by temperature, improve response time and sensing accuracy of the surface acoustic wave sensor to temperature.
Detailed description of the invention
Fig. 1 is a kind of structure chart of new type of SAW temperature sensor.
Fig. 2 is a kind of sectional view of new type of SAW temperature sensor.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the invention will be further described.
Referring to shown in attached drawing 1 and attached drawing 2, the present embodiment manufacture craft is as follows:
1, substrate 1: substrate uses Piezoelectric Substrates, substrate back polishing, and front high-precision is polished.
2, electrode structure 2 and 4: emission electrode 2 and receiving electrode 4 are made of aluminium electrode or gold electrode material, electrode
With a thickness of the 8% of central wavelength, width is the 1/4 of wavelength.
3, phonon crystal 3: in the substrate for preparing electrode structure, using the method for vacuum evaporation be deposited one layer of aluminium,
Copper or gold are used as phonon crystal material.If necessary to thicker phonon crystal material, chemical-electrical can be used on basis herein
The method of plating thickeies prepared phonon crystal material.
4, silicon dioxide layer 5: after the completion of above structure preparation, sensitive pathway 6 being stopped with photoresist, and reference channel is sudden and violent
Dew 7 comes out, and then prepares layer of silicon dioxide layer using magnetron sputtering chemical vapor deposition method.It is removed again by removing mode
Photoresist on sensitive pathway forms channel structure figure.
For the various method embodiments described above, simple in order to describe, therefore, it is stated as a series of action combinations, but
It is that those skilled in the art should be aware of, the present invention is not limited by the sequence of acts described, because according to the present invention,
Certain steps can serially or simultaneously be executed using other；Secondly, those skilled in the art should also know that, the above method is implemented
Example belongs to preferred embodiment, and related actions and modules are not necessarily necessary for the present invention.
To a kind of phonon crystal SAW Temperature Sensors disclosed by the invention, specific case is applied to this hair in text
Bright principle and embodiment is expounded, method of the invention that the above embodiments are only used to help understand and its
Core concept；It should be understood that the above is only a specific embodiment of the present invention, it is not intended to restrict the invention,
All within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in of the invention
Within protection scope.
Claims (4)
1. one kind is based on phonon crystal SAW Temperature Sensors characterized by comprising substrate；It is placed in double on substrate
Channel SAW delay line structure, binary channels include sensitive pathway and reference channel, and each structure includes emission electrode, phonon
Crystal structure, receiving electrode；Emission electrode uses divergent shape finger structure；Be different from sensitive pathway, reference channel structure it
It is upper that there are also the silica temperature compensating layers of a thickness.
2. according to claim 1 be based on phonon crystal SAW Temperature Sensors, the device substrate uses silicic acid
Gallium lanthanum, lithium niobate or quartz are used as Piezoelectric Substrates.
3. according to claim 1 be based on phonon crystal SAW Temperature Sensors, the angle of divergence of the emission electrode
Degree is between 0 ° to 60 °.The material of emission electrode and receiving electrode is surface acoustic wave wavelength using aluminium or golden material, width
1/4.For phonon crystal using aluminium, copper or golden material, phonon crystal is cylindrical-shaped structure, and diameter is the 1/ of surface acoustic wave wavelength
2, the period is 1 surface acoustic wave wavelength, there is the phonon crystal in 50 periods on the direction of propagation.
4. according to claim 1 be based on phonon crystal SAW Temperature Sensors, the emission electrode and reception electricity
The distance between pole is 100 surface acoustic wave wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710711047.2A CN109405997A (en) | 2017-08-18 | 2017-08-18 | Acoustic surface wave temperature sensor with photonic crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710711047.2A CN109405997A (en) | 2017-08-18 | 2017-08-18 | Acoustic surface wave temperature sensor with photonic crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109405997A true CN109405997A (en) | 2019-03-01 |
Family
ID=65455264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710711047.2A Pending CN109405997A (en) | 2017-08-18 | 2017-08-18 | Acoustic surface wave temperature sensor with photonic crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109405997A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110196277A (en) * | 2019-06-17 | 2019-09-03 | 宁海县浙工大科学技术研究院 | A kind of new type of SAW moisture sensor |
| CN114703536A (en) * | 2021-09-24 | 2022-07-05 | 南京大学 | Micro-area electroplating device and application thereof in preparation of surface acoustic wave photonic crystal |
-
2017
- 2017-08-18 CN CN201710711047.2A patent/CN109405997A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110196277A (en) * | 2019-06-17 | 2019-09-03 | 宁海县浙工大科学技术研究院 | A kind of new type of SAW moisture sensor |
| CN114703536A (en) * | 2021-09-24 | 2022-07-05 | 南京大学 | Micro-area electroplating device and application thereof in preparation of surface acoustic wave photonic crystal |
| CN114703536B (en) * | 2021-09-24 | 2023-12-05 | 南京大学 | Micro-region electroplating device and application thereof in preparation of surface acoustic wave phonon crystal |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190301 |
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| WD01 | Invention patent application deemed withdrawn after publication |