CN109403780B - Automatic teller machine shittter gate relay driving circuit - Google Patents
Automatic teller machine shittter gate relay driving circuit Download PDFInfo
- Publication number
- CN109403780B CN109403780B CN201811584742.8A CN201811584742A CN109403780B CN 109403780 B CN109403780 B CN 109403780B CN 201811584742 A CN201811584742 A CN 201811584742A CN 109403780 B CN109403780 B CN 109403780B
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- CN
- China
- Prior art keywords
- resistor
- shift gate
- channel mosfet
- electromagnetic valve
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000005484 gravity Effects 0.000 claims abstract description 5
- 238000012423 maintenance Methods 0.000 description 8
- 239000000428 dust Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010705 motor oil Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05F—DEVICES FOR MOVING WINGS INTO OPEN OR CLOSED POSITION; CHECKS FOR WINGS; WING FITTINGS NOT OTHERWISE PROVIDED FOR, CONCERNED WITH THE FUNCTIONING OF THE WING
- E05F15/00—Power-operated mechanisms for wings
- E05F15/70—Power-operated mechanisms for wings with automatic actuation
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
- E05Y2999/00—Subject-matter not otherwise provided for in this subclass
Landscapes
- Electronic Switches (AREA)
Abstract
The invention provides a drive circuit of a shirtter gate relay of an automatic teller machine, which comprises: the device comprises a diode D1 (1), a resistor R3 (2), a resistor R4 (3), an electromagnetic valve RL1 (4), a resistor R1 (5), a resistor R2 (6), an NPN transistor Q1 (7) and an N channel MOSFET Q2 (8). According to the invention, an ATM (automatic teller machine) valve control signal reaches the base electrode of an NPN (negative-positive-negative) transistor Q1 (7) through a resistor R2 (6), if the valve control signal is in a low level, the NPN transistor Q1 (7) is cut off, an N channel MOSFET Q2 (8) works in a saturation region and is fully conducted, a 24V electromagnetic valve RL1 (4) is electrified and attracted, and the valve is linked with the action of a valve mechanical structure of the valve to open the valve of the ATM; if the shift gate control signal is at a high level, the NPN transistor Q1 (7) is turned on, the N channel MOSFET Q2 (8) is turned off, the 24V electromagnetic valve RL1 (4) is powered off and released, and the linkage shift gate mechanical structure acts to close and lock the shift gate under the action of gravity.
Description
Technical Field
The invention relates to a drive circuit of a shirtter gate relay of an automatic teller machine.
Background
At present, the design of the ATM shift gate mainly uses a stepping motor for driving, and is characterized in that the mechanical structure is complex in design, faults are easy to occur, PM (preventive maintenance) needs to be carried out once in 3 months, related gear contact points need engine oil of related types, and if site dust is large, maintenance times are increased, so that the fault rate is high, the labor cost and the maintenance cost are very large, and the market is in urgent need of an ATM shift gate product with simple structure and low maintenance rate.
Disclosure of Invention
The present invention provides a solenoid valve driving circuit for a shirtter gate of an automatic teller machine. The circuit is matched with a related core electronic device protection circuit through the isolation design of large current and small current, and a 24V electromagnetic valve is used as mechanical structure driving power of an ATM switch, so that simple switch driving of the switch is realized, the switch reliability is ensured, meanwhile, the dust resistance is obviously enhanced, the fault rate is obviously reduced, the maintenance time interval can be prolonged to more than 1 year, and the maintenance times are reduced by more than 4 times.
In order to achieve the above purpose, the invention adopts the following technical scheme: the device comprises a diode D1 (1), a resistor R3 (2), a resistor R4 (3), an electromagnetic valve RL1 (4), a resistor R1 (5), a resistor R2 (6), an NPN transistor Q1 (7) and an N channel MOSFET Q2 (8); the control signal of the ATM shift gate reaches the base electrode of an NPN transistor Q1 (7) through a resistor R2 (6), if the control signal of the shift gate is in a low level, the NPN transistor Q1 (7) is cut off, an N channel MOSFET Q2 (8) works in a saturation region and is fully conducted, a 24V electromagnetic valve RL1 (4) is electrified and attracted, and the mechanical structure action of the linkage shift gate opens the shift gate of the ATM; if the control signal of the shift gate is at a high level, an NPN (negative-positive-negative) transistor Q1 (7) is turned on, an N-channel MOSFET Q2 (8) is turned off, a 24V electromagnetic valve RL1 (4) is powered off and released, the shift gate is closed and locked by the linkage shift gate mechanical structure under the action of gravity, and meanwhile, an LRD (line-by-line) release loop formed by a diode D1 (1), a resistor R4 (3) and the electromagnetic valve RL1 (4) releases the source of the N-channel MOSFET Q2 (8) rapidly at high voltage, so that the circuit safety is protected.
Further, the input end of the router gate control signal is connected with the upper end of the resistor R1 (5) and the left end of the resistor R2 (6); the base electrode of the NPN transistor Q1 (7) is connected with the right end of the resistor R2 (6); the lower end of the grounding resistor R1 (5), the emitter of the NPN transistor Q1 (7) and the drain of the N channel MOSFET Q2 (8); the +24VDC is connected with the upper end of the resistor R3 (2), the cathode of the diode D1 (1) and the input end of the electromagnetic valve RL1 (4); the upper end of the resistor R4 (3) is connected with the anode of the diode D1 (1); the lower end of the resistor R4 (3) is connected with the source electrode of the N-channel MOSFET Q2 (8) and the output end of the electromagnetic valve RL1 (4); .
The model number of the triode transistor Q1 (7) is 2N2369
The model of the N-channel MOSFET Q2 (8) is 2N7008.
The model of the diode D1 (1) is 1N4002.
The type of the solenoid valve RL1 (4) is QD25-10A.
The working principle of the invention is as follows: if the shift gate control signal is at a low level, an NPN transistor Q1 (7) is turned off, an N channel MOSFET Q2 (8) works in a saturation region and is fully turned on, a 24V electromagnetic valve RL1 (4) is electrified to be attracted, and the shift gate control signal is linked with the shift gate mechanical structure to act to open an ATM shift gate; if the control signal of the shift gate is at a high level, an NPN (negative-positive-negative) transistor Q1 (7) is turned on, an N-channel MOSFET Q2 (8) is turned off, a 24V electromagnetic valve RL1 (4) is powered off and released, the shift gate is closed and locked by the linkage shift gate mechanical structure under the action of gravity, and meanwhile, an LRD (line-by-line) release loop formed by a diode D1 (1), a resistor R4 (3) and the electromagnetic valve RL1 (4) releases the source of the N-channel MOSFET Q2 (8) rapidly at high voltage, so that the circuit safety is protected.
The invention has the following beneficial effects: the invention uses the 24V electromagnetic valve as the mechanical structure driving power of the ATM switch, realizes the simple switch driving of the switch, ensures the switch reliability, obviously enhances the dust resistance, obviously reduces the failure rate, prolongs the maintenance time interval to more than 1 year, and reduces the maintenance times by more than 4 times.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a schematic structural view of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a diode D1 (1), a resistor R3 (2), a resistor R4 (3), a solenoid valve RL1 (4), a resistor R1 (5), a resistor R2 (6), an NPN transistor Q1 (7), and an N-channel MOSFET Q2 (8); the control signal of the ATM shift gate reaches the base electrode of an NPN transistor Q1 (7) through a resistor R2 (6), if the control signal of the shift gate is in a low level, the NPN transistor Q1 (7) is cut off, an N channel MOSFET Q2 (8) works in a saturation region and is fully conducted, a 24V electromagnetic valve RL1 (4) is electrified and attracted, and the mechanical structure action of the linkage shift gate opens the shift gate of the ATM; if the control signal of the shift gate is at a high level, an NPN transistor Q1 (7) is turned on, an N channel MOSFET Q2 (8) is turned off, a 24V electromagnetic valve RL1 (4) is in power failure and is released, the shift gate is closed and locked by the linkage of the shift gate mechanical structure under the action of gravity, meanwhile, an LRD bleeder circuit formed by a diode D1 (1), a resistor R4 (3) and the electromagnetic valve RL1 (4) rapidly bleeds the source of the N channel MOSFET Q2 (8) at high voltage, and the model of the triode transistor Q1 (7) is 2N2369, so that the circuit safety is protected. The model of the N-channel MOSFET Q2 (8) is 2N7008. The model of the diode D1 (1) is 1N4002. The type of the solenoid valve RL1 (4) is QD25-10A.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (4)
1. The utility model provides an automatic withdrawal machine shitter door relay drive circuit which characterized in that: the device comprises a diode D1 (1), a resistor R3 (2), a resistor R4 (3), an electromagnetic valve RL1 (4), a resistor R1 (5), a resistor R2 (6), an NPN transistor Q1 (7) and an N channel MOSFET Q2 (8); the input end of the shitter gate control signal is connected with the upper end of the resistor R1 (5) and the left end of the resistor R2 (6); the base electrode of the NPN transistor Q1 (7) is connected with the right end of the resistor R2 (6); the lower end of the resistor R1 (5) is grounded at the emitter of the NPN transistor Q1 (7) and the drain of the N channel MOSFET Q2 (8); +24VDC is connected with the upper end of the resistor R3 (2), the cathode of the diode D1 (1) and the input end of the electromagnetic valve RL1 (4); the upper end of the resistor R4 (3) is connected with the anode of the diode D1 (1); the lower end of the resistor R4 (3) is connected with the source electrode of the N-channel MOSFET Q2 (8) and the output end of the electromagnetic valve RL1 (4); the control signal of the shift gate reaches the base electrode of an NPN transistor Q1 (7) through a resistor R2 (6), if the control signal of the shift gate is at a low level, the NPN transistor Q1 (7) is cut off, an N-channel MOSFET Q2 (8) works in a saturation region to be fully conducted, a 24V electromagnetic valve RL1 (4) is electrified and closed, and the shift gate is opened by linking a shift gate opening and closing mechanical structure;
if the control signal of the shift gate is at a high level, an NPN (negative-positive-negative) transistor Q1 (7) is turned on, an N-channel MOSFET Q2 (8) is turned off, a 24V electromagnetic valve RL1 (4) is in power failure and is released, a mechanical switching structure of the shift gate is linked to be closed and locked under the action of gravity, and meanwhile, an LRD (line-by-line) bleeder circuit formed by a diode D1 (1), a resistor R4 (3) and the electromagnetic valve RL1 (4) rapidly bleeds the high voltage of the source of the N-channel MOSFET Q2 (8), so that the circuit safety is protected;
the model of the transistor Q1 (7) is 2N2369.
2. The automatic teller machine shift gate relay drive circuit according to claim 1, wherein: the model of the N-channel MOSFET Q2 (8) is 2N7008.
3. The automatic teller machine shift gate relay drive circuit according to claim 1, wherein: the model of the diode D1 (1) is 1N4002.
4. The automatic teller machine shift gate relay drive circuit according to claim 1, wherein: the type of the solenoid valve RL1 (4) is QD25-10A.
Priority Applications (1)
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CN201811584742.8A CN109403780B (en) | 2018-12-24 | 2018-12-24 | Automatic teller machine shittter gate relay driving circuit |
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CN201811584742.8A CN109403780B (en) | 2018-12-24 | 2018-12-24 | Automatic teller machine shittter gate relay driving circuit |
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CN109403780A CN109403780A (en) | 2019-03-01 |
CN109403780B true CN109403780B (en) | 2024-03-19 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090056822A (en) * | 2007-11-30 | 2009-06-03 | 박재웅 | Unification type automatic fireproofing shutter |
CN105442974A (en) * | 2016-01-04 | 2016-03-30 | 郑州朗睿科技有限公司 | Door closing clamping-prevention controller |
CN205743430U (en) * | 2016-05-12 | 2016-11-30 | 浙江铁锤安防科技有限公司 | A kind of hatch door control system of ATM protective cabin |
CN209990323U (en) * | 2018-12-24 | 2020-01-24 | 昆明理工大学津桥学院 | SHUTTER gate relay driving circuit of automatic teller machine |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6068956B2 (en) * | 2012-04-18 | 2017-01-25 | 株式会社ミツバ | Motor control device |
-
2018
- 2018-12-24 CN CN201811584742.8A patent/CN109403780B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090056822A (en) * | 2007-11-30 | 2009-06-03 | 박재웅 | Unification type automatic fireproofing shutter |
CN105442974A (en) * | 2016-01-04 | 2016-03-30 | 郑州朗睿科技有限公司 | Door closing clamping-prevention controller |
CN205743430U (en) * | 2016-05-12 | 2016-11-30 | 浙江铁锤安防科技有限公司 | A kind of hatch door control system of ATM protective cabin |
CN209990323U (en) * | 2018-12-24 | 2020-01-24 | 昆明理工大学津桥学院 | SHUTTER gate relay driving circuit of automatic teller machine |
Non-Patent Citations (1)
Title |
---|
光电耦合MOS栅固态继电器回路研究与误触发改进措施;杨广羽;马玉新;傅亚光;刘敏;王彦宾;;电力系统保护与控制(15);全文 * |
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