CN109390403A - Grapheme transistor and preparation method thereof, application method and from driving electronic skin - Google Patents

Grapheme transistor and preparation method thereof, application method and from driving electronic skin Download PDF

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CN109390403A
CN109390403A CN201710683047.6A CN201710683047A CN109390403A CN 109390403 A CN109390403 A CN 109390403A CN 201710683047 A CN201710683047 A CN 201710683047A CN 109390403 A CN109390403 A CN 109390403A
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layer
electrode
ionic gel
dielectric layer
friction
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CN109390403B (en
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孙其君
孟艳芳
张弛
赵俊青
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Beijing Institute of Nanoenergy and Nanosystems
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Beijing Institute of Nanoenergy and Nanosystems
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H02N1/04—Friction generators
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    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
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Abstract

A kind of grapheme transistor and preparation method thereof, application method and from driving electronic skin, wherein, grapheme transistor includes basal layer, electrode layer, graphene layer and ionic gel dielectric layer, in which: electrode layer includes being formed in the source electrode and drain electrode being independently distributed on the same surface of basal layer；Graphene layer is located at the upper surface of source electrode and drain electrode, and graphene layer is contacted with source electrode and drain electrode；Ionic gel dielectric layer is located at graphene layer upper surface.The disclosure is using graphene as transistor, realize grid-coplanar structure of source-drain electrode-channel, direct friction provides grid voltage on ionic gel dielectric layer, can be used as from driving electronic skin, has the characteristics that compact-sized, operation voltage is low, control accuracy is high and sensitivity is high.

Description

Grapheme transistor and preparation method thereof, application method and from driving electronic skin
Technical field
The disclosure belongs to field of semiconductor devices, relates more specifically to a kind of grapheme transistor and preparation method thereof, with And grapheme transistor application method and from driving electronic skin.
Background technique
Electronic skin system be it is a kind of using new material technology, sensor technology and micro electro mechanical processing technology production can Imitate the electronic device or electronic system of the functions such as human skin protection, perception, adjusting.The main target of electronic skin is:
1, flexible, it can fit closely in human body；
2, intelligent: the signal (temperature, blood pressure, pulse) that can incude physical activity in high sensitivity obtains the ginseng of quantification Number information；
3, systemic: to extraneous environmental change quick response and feedback can be made.
It is integrated to meet the high sensitivity of electronic skin detection environment with high-resolution and device, is based on field effect transistor (FET) research of electronic skin is of great significance.Active matric electronic skin based on transistor is with its multi-parameter prison The advantages such as control, high sensitivity, high-resolution monitoring and high integration, occupy very important ground in the research and development of electronic skin Position, can accurately detect temperature, pressure, stress and multiple parameter.
However, needing to apply grid and drain voltage simultaneously in the transistor course of work, although the optimization of active matrix Design has greatly reduced operating power consumption, but due to the limitation of conventional gate insulating layer material, active matric electronic skin Operating voltage is mostly higher than 5V, and after electronic skin, which is worn, is even implanted into human body, there are some potential safety problemss and inconvenience Benefit.
Furthermore since traditional wearable electronic skin is dependent on extraneous power supply, long conducting wire is housed, mobility is limited Application.Therefore, from the flexible electronic skin for driving (not needing continued power or intermittent charging), meet wearable portable prison Survey the important needs of physical activity, it will greatly extend the application of flexible electronic skin.It is general that electric energy is converted by mechanical energy Pass through piezoelectricity and friction electricity, wherein piezoelectric nano generator is applied to based in ionic gel dielectric layer transistor, is pressed The electronic skin of electric self-driving type is successfully developed.But from the research of the electronic skin driven, there is also certain based on piezoelectricity The problem of, first is that the actual induction region of electronic skin concentrates on nano generator part, array manifold cannot be made full use of；Two It is the carrier concentration that voltage provided by nano generator highly desirable cannot be used to regulate and control channel.Therefore, it develops more Efficient self-driving type electronic skin is next step problem to be solved.
Disclosure
Based on problem above, the main purpose of the disclosure be to propose a kind of grapheme transistor and preparation method thereof and From driving electronic skin, for solving at least one of above technical problem.
To achieve the goals above, as an aspect of this disclosure, the disclosure proposes a kind of grapheme transistor, including Basal layer, electrode layer, graphene layer and ionic gel dielectric layer, in which: electrode layer includes being formed on the same surface of basal layer The source electrode and drain electrode being independently distributed；Graphene layer is located at the upper surface of source electrode and drain electrode, and is in contact with the source electrode and drain electrode； Ionic gel dielectric layer is located at graphene layer upper surface.
In some embodiments of the present disclosure, above-mentioned electrode layer further includes that be located at the basal layer with source electrode and drain electrode same Side and the grid being independently distributed；Between drain and gate, graphene layer is not in contact the source electrode with grid.
In some embodiments of the present disclosure, above-mentioned ionic gel dielectric layer is contacted with gate upper surface.
In some embodiments of the present disclosure, above-mentioned electronic skin further includes the guarantor positioned at ionic gel dielectric layer upper surface Protect coating；Preferably, which is fluorine-containing coat.
In some embodiments of the present disclosure, above-mentioned basal layer is flexible material, preferably includes poly terephthalic acid second two Alcohol ester.
In some embodiments of the present disclosure, the material of main part of above-mentioned electrode layer includes metal or semiconductor material, preferably Ground, semiconductor material include graphene.
In some embodiments of the present disclosure, above-mentioned graphene layer is covered in the upper surface of source electrode and drain electrode；Preferably, stone The two sides of black alkene layer are concordant with the side of source electrode and drain electrode.
In some embodiments of the present disclosure, above-mentioned graphene layer is single-layer graphene.
In some embodiments of the present disclosure, the thickness range of above-mentioned electrode layer is 40~100nm；Ionic gel dielectric layer With a thickness of 300~1000 μm；Protective coating with a thickness of 100~300 μm.To achieve the goals above, as the disclosure On the other hand, the disclosure proposes a kind of preparation method of grapheme transistor, comprising the following steps: electrode is prepared in substrate Layer, and electrode layer is lithographically formed independent source electrode and drain electrode；Previously prepared graphene layer is transferred to source electrode and drain electrode Upper surface, graphene layer are in contact with source electrode and drain electrode；Ionic gel dielectric layer is prepared on the graphene layer.
In some embodiments of the present disclosure, when being lithographically formed independent source electrode and drain electrode, electrode layer has also been lithographically formed Grid, source electrode is between drain and gate；The upper surface of grid is also formed with ionic gel dielectric layer, and on graphene layer The ionic gel dielectric layer on surface is structure as a whole.
In some embodiments of the present disclosure, being prepared after ionic gel dielectric layer on graphene layer further includes following step It is rapid: preparation protective coating, and protective coating is coated to the upper surface of ionic gel dielectric layer；Preferably, which is Fluorine-containing coat.
In some embodiments of the present disclosure, the method for above-mentioned preparation protective coating includes: that hydrophobic nano-particles are dissolved in four Fluorine tetrahydrofuran solution, and solution A is ultrasonically formed after perfluoro capryl triethoxysilane and dimethyl silicone polymer is added；Poly dimethyl Siloxanes is dissolved in tetrafluoro tetrahydrofuran solution, forms solution B；Protective coating is ultrasonically formed after solution A is mixed with solution B.
To achieve the goals above, as the another aspect of the disclosure, the disclosure proposes a kind of above-mentioned graphene crystal The application method of pipe, wherein it is rubbed ionic gel dielectric layer or protective coating by the polar friction material of positive or negative friction, The grid voltage of transistor is provided.
To achieve the goals above, as the another aspect of the disclosure, the disclosure proposes a kind of above-mentioned graphene crystal The application method of pipe, wherein it is rubbed ionic gel dielectric layer or protective coating by the polar friction material of positive or negative friction, The grid voltage of transistor is provided；Alternatively, applying grid voltage in grid.
To achieve the goals above, as the another aspect of the disclosure, the disclosure proposes a kind of driving electronic skin certainly, Including above-mentioned grapheme transistor, ionic gel dielectric layer or protective coating and the positive or negative polar friction material of friction Friction-driven grapheme transistor generates transducing signal.
Grapheme transistor that the disclosure proposes and preparation method thereof and certainly driving electronic skin have below beneficial to effect Fruit:
1, the grapheme transistor of the disclosure is not necessarily to additional electrodes, breaks through the vertical structure of conventional graphite alkene transistor, real Grid-coplanar structure of source-drain electrode-channel is showed, therefore space utilization rate is high；
2, double electrical layers are formed as grid using ionic gel dielectric layer, so that the capacitor of transistor increases, The output voltage of triboelectricity is high, and the current changing rate that unit area generates is high；
3, the main material using graphene as transistor, develop be suitable for rub electronics it is durable and efficient from Sub- gel, and constructed with this from driving electronic skin, meet the main standard of electronic skin: it is flexible, it can fit closely in people Body；Intelligence: the signal (temperature, blood pressure, pulse) that can incude physical activity in high sensitivity obtains the parameter information of quantification； Systematicness: to extraneous environmental change quick response and feedback can be made；
4, it is realized as grid from driving using ionic gel, not only energy saving, and straight on ionic gel dielectric layer Friction is connect, space can be efficiently used, saves material, so that from driving electronic skin is compact-sized, operation voltage is low, control accuracy High and sensitivity is high；
5, fluorine-containing coat is coated on ionic gel, it is close not increase charge merely with the strong attraction electronic capability of fluorine material Degree, and the output of triboelectricity is increased, the durability of ionic gel dielectric layer is improved, so that it is met electronic skin long-term The requirement used.
Detailed description of the invention
Fig. 1 is the structural schematic diagram from driving electronic skin that one embodiment of the disclosure proposes.
Fig. 2 (a)~Fig. 2 (d) is in Fig. 1 from the working principle diagram for driving electronic skin.
Fig. 3 is the structural schematic diagram from driving electronic skin that another embodiment of the disclosure proposes.
Fig. 4 (a)~Fig. 4 (d) is in Fig. 3 from the working principle diagram for driving electronic skin.
Fig. 5 (a) is in embodiment 1 from the transfer curve of grapheme transistor in driving electronic skin.
Fig. 5 (b) is in embodiment 1 from transfer of the grapheme transistor under friction generator friction in driving electronic skin Curve.
Fig. 5 (c) is in embodiment 1 from the curve of output of grapheme transistor in driving electronic skin.
Fig. 5 (d) is I-V curve when rubbing different distance from the friction generator of driving electronic skin in embodiment 1.
Fig. 6 (a) is in embodiment 2 from the transfer curve of grapheme transistor in driving electronic skin.
Fig. 6 (b) be in embodiment 2 from driving electronic skin in grapheme transistor ionic gel dielectric layer with just rub Wipe the transfer curve under electrode sequence material friction.
Fig. 6 (c) is in embodiment 2 from the curve of output of grapheme transistor in driving electronic skin.
Fig. 6 (d) is in embodiment 2 from the ionic gel dielectric layer and positive friction of grapheme transistor in driving electronic skin I-V curve when electrode sequence material friction different distance.
Fig. 6 (e) is in embodiment 2 from the ionic gel dielectric layer and positive friction of grapheme transistor in driving electronic skin Transistor current versus time curve under electrode sequence material reciprocating friction.
Fig. 6 (f) is in embodiment 2 from the ionic gel dielectric layer and positive friction of grapheme transistor in driving electronic skin After electrode sequence material reciprocating friction 100 times, transistor current versus time curve.
Fig. 7 (a) is in embodiment 3 from the transfer curve of grapheme transistor in driving electronic skin.
Fig. 7 (b) is in embodiment 3 from the ionic gel dielectric layer and positive friction of grapheme transistor in driving electronic skin Transfer curve under electrode sequence material friction.
Fig. 7 (c) is in embodiment 3 from the curve of output of grapheme transistor in driving electronic skin.
Fig. 7 (d) is in embodiment 3 from the ionic gel dielectric layer of driving electronic skin grapheme transistor and positive friction electricity I-V curve when the sequence material friction different distance of pole.
Fig. 7 (e) is in embodiment 3 from the ionic gel dielectric layer of driving electronic skin grapheme transistor and positive friction electricity Transistor current versus time curve under the sequence material reciprocating friction of pole.
Fig. 7 (f) is in embodiment 3 from the ionic gel dielectric layer and positive friction of grapheme transistor in driving electronic skin After electrode sequence material reciprocating friction 3000 times, transistor current versus time curve.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference Attached drawing is described in further detail the disclosure.
2012, in view of the coupling of triboelectrification and electrostatic induction, the friction that mechanical energy is converted into electric energy can be received Rice generator comes out.Friction generator (TENG) is raw on surface after being in contact using two kinds of different materials of electric polarity that rub At triboelectric charge, when separation, can generate potential difference to form electric current output in external circuitry.
Friction generator can also obtain contact electrification field effect transistor in conjunction with conventional field effect transistor, be based on this Friction electronics is developed.In scene effect transistor, semiconductor layer conductive channel width and carrier concentration are electric by grid are applied Voltage-controlled system, to adjust source and drain electrode current.And in friction electronics, TENG replaces gate voltage to carry out adjusting means source-drain electrode electricity Stream, the mechanical energy for realizing external environment directly control source and drain electrode current.Since field effect transistor can for electronic skin Realize the physical activity monitoring of high sensitivity, high precision, therefore, friction nanoelectronic of the friction generator in conjunction with transistor It learns and is applied to electronic skin, increase in the advantage of scene effect transistor from driving, exact controllability and integrated new Advantage can be used for personal medical treatment and human-computer interaction.For example, based on friction nanometer power generator driving, wearable from the imitative of driving The advantages that filming has light, low cost, easily prepares, is multifunctional.
To make up current electronic skin to the high energy consumption demand of external voltage, and safe and reliable self-powered is developed to be following Dynamic built-in type device provides theory and practice basis, and the disclosure drives the electrostatic potential that research and utilization friction nanometer power generator generates The electricity and sensitivity of dynamic electric double layer transistor and its basic logic device, and exploitation based on this is based on friction electronics Self-driving type electronic skin.Therefore, the electronic skin of the application exploitation is in human health treatment and human-computer interaction feedback neck Domain will have apparent novelty.
Therefore, as shown in Figure 1, the disclosure proposes a kind of grapheme transistor, including basal layer 101, electrode layer, graphene Layer 105 and ionic gel dielectric layer 106, in which: electrode layer includes being formed in the source electrode being independently distributed on the same surface of basal layer 103 and drain electrode 102；Graphene layer 105 be located at source electrode 103 and drain electrode 102 upper surface, two sides respectively with source electrode 103 and The side of drain electrode 102 is concordant；Ionic gel dielectric layer 106 is located at 105 upper surface of graphene layer.
In some embodiments of the present disclosure, above-mentioned electrode layer further includes being located at basal layer with source electrode 103 and drain electrode 102 101 the same sides and the grid 104 being independently distributed, the source electrode 103 are located between drain electrode 102 and grid 104；Ionic gel is situated between simultaneously Electric layer 106 is contacted with 104 upper surface of grid.Therefore, the grapheme transistor of the disclosure is not necessarily to additional electrodes, breaks through conventional graphite The vertical structure of alkene transistor realizes grid-coplanar structure of source-drain electrode-channel, therefore space utilization rate is high.
Based on above-mentioned grapheme transistor, the disclosure also proposes a kind of preparation method of grapheme transistor, including following Step: electrode layer is prepared in substrate, and electrode layer is lithographically formed independent source electrode and drain electrode；By previously prepared graphene Layer is transferred to the upper surface of source electrode and drain electrode, and graphene layer is in contact with source electrode and drain electrode；It is solidifying that ion is prepared on graphene layer Glue dielectric layer.
It is above-mentioned in the step of preparing electrode layer in substrate in some embodiments of the present disclosure, electrode layer also photoetching shape At there is grid, source electrode is between drain and gate；In the step of preparing ionic gel dielectric layer on graphene layer, grid Upper surface is also formed with ionic gel dielectric layer, and is structure as a whole with the ionic gel dielectric layer of graphene layer upper surface.
In some embodiments of the present disclosure, above-mentioned graphene layer is covered in the upper surface of source electrode and drain electrode, it is preferable that stone The two sides of black alkene layer are concordant with the side of source electrode and drain electrode respectively, so as to form good contact, improve graphene crystal The performance of pipe.
In some embodiments of the present disclosure, the upper surface of ionic gel dielectric layer is also formed with protective coating, preferably Fluorine-containing coat to not increase charge density merely with the strong attraction electronic capability of fluorine material, and increases triboelectricity Output, improve the durability of ionic gel dielectric layer, make its meet electronic skin long-time service requirement.
As shown in Figure 1, above-mentioned grapheme transistor is based on, in some embodiments of the present disclosure, it is also proposed that a kind of self-powered Electronic skin, including friction generator and above-mentioned grapheme transistor are moved, any of two frictional layers in friction generator It is connect with grid 104, two frictional layers 201,202 friction-drivens from driving electronic skin by friction generator.Wherein, it rubs The thickness for wiping two frictional layers 201,202 in generator is about 300~1000 μm, and length is about 2~5cm.With this construct from Electronic skin is driven, the main standard of electronic skin is met: it is flexible, it can fit closely in human body；Intelligence: can be in high sensitivity The signal (temperature, blood pressure, pulse) for incuding physical activity obtains the parameter information of quantification；Systematicness: external environment can be become Change quick response and makes feedback.
Two frictional layers 201,202 friction-drivens from driving electronic skin by friction generator, can also use it His power supply connects grid 104 to provide grid voltage for grapheme transistor.Alternatively, passing through the positive or negative polar friction material of friction Material friction ionic gel layer or protective coating, provide the grid voltage of transistor.
In some embodiments of the present disclosure, above-mentioned basal layer is flexible material；Poly terephthalic acid preferably flexible Glycol ester (PET).
In some embodiments of the present disclosure, the material of main part of above-mentioned electrode layer includes metal or semiconductor material, is somebody's turn to do half Conductor material includes graphene.
It in some embodiments of the present disclosure, prepares in the method for grapheme transistor, may additionally include the upper table of copper foil Face deposits the step of graphene layer, specifically includes: the copper foil after cleaning-drying is put into vitreosil pipe, logical to vitreosil pipe Enter hydrogen, after being heated at high temperature a period of time, methane gas is passed through while being passed through hydrogen, reaction generates graphene and gradually sinks Product obtains graphene layer to the upper surface of copper foil.
It in some embodiments of the present disclosure, prepares in the method for grapheme transistor, ion is prepared on graphene layer The step of gel dielectric layer include: use mass ratio for 90: 8: 2 the bis- (trimethyl fluoride sulfonyls of 1- ethyl-3-methylimidazole quinoline Base) 2 methyl propyl benzene of imines, polyethyleneglycol diacrylate monomer and -2 methyl Propafenone mixed solution of 2- hydroxyl and photoinitiator Ketone is mixed to form ionic gel liquid；Ionic gel liquid is added in the upper surface of graphene layer, under ultraviolet light mask exposure Ionic gel dielectric layer is formed afterwards.
In some embodiments of the present disclosure, the thickness of basal layer is about 5mm, a length of 1~3cm；Source, leakage, grid ( Be exactly electrode layer) thickness be about 40~100nm；The thickness of ionic gel dielectric layer is about 300~1000 μm, and length is about 2 ~5mm.
Main material of the disclosure using the single-layer graphene of transparent and high tenacity and superior electrical property as transistor, is opened It sends out the durable and efficient ionic gel for the electronics that is suitable for rubbing and selects to optimize corresponding friction material, friction electricity is constructed with this Son, which is learned, is based on graphene electric double layer transistor (GFET).In the present invention, the graphene layer of single layer is preferably used in graphene layer.
As shown in Fig. 2 (a)~Fig. 2 (d), to include that contact separation formula friction generator (is not limited thereto, friction hair Motor can also be other any type structures) from for driving electronic skin, it is former to the specific works from driving electronic skin Reason is described in detail, in the friction generator of contact separation formula, differentiated friction electric polarity (positive friction electrode sequence material and negative Friction electrode sequence material) dielectric layer material when being contacted, surface is respectively induced out opposite charge；Due to electrostatic equilibrium, Charge flowing is not generated, and (such as Fig. 2 (a) and Fig. 2 (c)) is not had an impact to transistor.When negative friction electrode sequence material 201 and just Friction electrode sequence material 202 leaves lesser distance, needs that electrostatic attraction is overcome to act on, and generates potential difference.As shown in Fig. 2 (b), When positive friction electrode sequence material 202 is connected with grid 104, in order to balance the negative electrical charge of positive friction electrode sequence material surface, grid Pole 104 incudes negative electrical charge, and ionic gel dielectric layer 106 becomes electric double layer.104/ ionic gel dielectric layer of grid, 106 interface, from There is negative, positive ion oriented alignment at sub- 106/ graphene layer of gel dielectric layer, 105 interface respectively.Due to ionic gel dielectric layer 106/ The anion of the orientation at 105 interface of graphene layer, is equivalent to and provides negative grid voltage for graphene layer 105, leads to the expense of graphene Rice energy level decline.As shown in Fig. 2 (d), when positive friction electrode sequence material 201 is connected with grid 106, in order to balance positive friction electricity The positive charge of pole sequence material surface, grid 104 incude negative electrical charge, and ionic gel dielectric layer 106 becomes electric double layer.Grid 104/ from There is positive and negative ion oriented alignment at sub- 106 interface of gel dielectric layer, 106/ graphene layer of ionic gel dielectric layer, 105 interface respectively. Due to the cation of the orientation at 106/ graphene layer of ionic gel dielectric layer, 105 interface, it is equivalent to and positive grid is provided for graphene Pressure, causes the fermi level of graphene to rise.
As shown in figure 3, the disclosure also proposes a kind of grapheme transistor.The grapheme transistor and graphite shown in FIG. 1 The difference of alkene transistor is: using ionic gel dielectric layer as grid.Referring to figure 3., which includes substrate Layer 101, electrode layer, graphene layer 105 and ionic gel dielectric layer 106, in which: electrode layer includes being formed in the same table of basal layer The source electrode 103 being independently distributed on face and drain electrode 102；Graphene layer 105 is located at the upper surface of source electrode 103 and drain electrode 102, two sides Side is concordant with the side of source electrode 103 and drain electrode 102 respectively；Ionic gel dielectric layer 106 is located at 105 upper surface of graphene layer；On Stating grapheme transistor further includes the protective coating 107 positioned at ionic gel dielectric layer upper surface；Preferably, the protective coating 107 be fluorine-containing coat.
In transistor in use, being applied by the polar friction material friction ionic gel layer of positive or negative friction or protection Layer, provides the grid voltage of transistor.
For including the grapheme transistor of grid 104 in electrode layer, two frictional layers of friction generator can be passed through 201,202 friction Abrasive voltages provide grid voltage, can also use other power supplys for example DC power supply connect grid 104 for Grapheme transistor provides grid voltage.Alternatively, by the polar friction material of positive or negative friction rub ionic gel layer or Protective coating provides the grid voltage of transistor.
The disclosure realizes driving certainly as grid using ionic gel, not only energy saving, and on ionic gel directly Friction can efficiently use space, save material, so that from driving electronic skin is compact-sized, operation voltage is low, control accuracy is high And sensitivity is high.
In some embodiments of the present disclosure, the preparation method of above-mentioned grapheme transistor specifically be can comprise the following steps that Step 1 deposits graphene layer in the upper surface of copper foil；Step 2 prepares electrode layer in substrate, and electrode layer is lithographically formed Independent source electrode and drain electrode；Step 3 dissolves copper foil after the chlorobenzene solution of spin coating methyl methacrylate on graphene layer, Graphene layer is transferred to the upper surface of source electrode and drain electrode, and washes off the chlorobenzene solution of methyl methacrylate；Step 4, in stone Ionic gel dielectric layer is prepared on black alkene layer；And protective coating is prepared on ionic gel dielectric layer, and protective coating is coated To the upper surface of ionic gel dielectric layer.Wherein, when graphene layer to be transferred to the upper surface of source electrode and drain electrode, graphene layer Two sides are concordant with the side of the source electrode and drain electrode respectively.Above-mentioned protective coating is preferably fluorine-containing coat.
In some embodiments of the present disclosure, the method for above-mentioned preparation protective coating includes: that hydrophobic nano-particles are dissolved in four Fluorine tetrahydrofuran solution, and solution A is ultrasonically formed after perfluoro capryl triethoxysilane (FAS) and dimethyl silicone polymer is added；It is poly- Dimethyl siloxane is dissolved in tetrafluoro tetrahydrofuran solution, forms solution B；Protective coating is ultrasonically formed after solution A is mixed with solution B. Preferably, the thickness of the protective coating is about 100~300 μm, and length is about 2~5mm.
Fluorine-containing coat is coated on ionic gel, it is close not increase charge merely with the strong attraction electronic capability of fluorine material Degree, and the output of triboelectricity is increased, the durability of ionic gel dielectric layer is improved, so that it is met electronic skin long-term The requirement used.
Guarantor as shown in Fig. 4 (a) or Fig. 4 (c), on positive negative friction 201 contact ions gel dielectric layer of electrode sequence material Coating 107 is protected, since the two friction electrode sequence is different, surface is respectively provided with negative and positive charge；At this time because being in charge balance, from There is no charge movements for sub- gel dielectric layer 106 and graphene layer 105, without electric current.As shown in Fig. 4 (b), when negative friction electricity When polar material 201 is separated with protective coating 107, for the positive charge on 107 surface of balanced protection coating, protective coating 107 with The electronics of 106 contact surface of ionic gel dielectric layer is mobile to attract ionic gel dielectric layer 106 due to electrostatic induction to surface Negatively charged ion in ionic liquid, so that the interface that ionic gel dielectric layer 106 is contacted with protective coating 107 leaves negative electricity Lotus.And ion positively charged in ionic gel dielectric layer 106 shifts to 105/ ionic gel dielectric layer of graphene layer, 106 interface, shape At electric double layer (i.e. Helmholtz face).Due to the cation of 106/ graphene layer of ionic gel dielectric layer, 105 interface orientation, quite In providing positive grid voltage for graphene layer, the fermi level of graphene is caused to rise.
Protective coating 107 as shown in Fig. 4 (d), on positive friction electrode sequence material 201 and ionic gel dielectric layer 106 When separation, for the negative electrical charge on 107 surface of balanced protection coating, contact circle of protective coating 107 and ionic gel dielectric layer 106 The hole in face is mobile to attract ion positively charged in ionic gel dielectric layer 106 due to electrostatic induction to surface, so that protecting The contact interface of shield coating 107 and ionic gel dielectric layer 106 leaves positive charge.And it is negatively charged in ionic gel dielectric layer 106 Ion shift to 105/ ionic gel dielectric layer of graphene layer, 106 interface, formed in electric double layer (i.e. Helmholtz face).Due to ion The anion of the orientation at 106/ graphene layer of gel dielectric layer, 105 interface, is equivalent to and provides negative grid voltage for graphene, lead to stone The fermi level of black alkene declines.
Based on above-mentioned grapheme transistor, the disclosure also proposes a kind of driving electronic skin certainly, and the ion of transistor is solidifying The friction of glue medium layer or protective coating and the positive or negative polar friction material of friction provides grid voltage and drives the crystal Pipe generates transducing signal.
In some embodiments of the present disclosure, propose electric from driving based on friction electronics electric double layer grapheme transistor The detailed step of the preparation method of sub- skin, preparation is as follows:
Step A, chemical vapor deposition prepares single-layer graphene；
Copper foil (10cm × 10cm, 25 μm, Sigma) first uses Piranha (piranha) solution (H2SO4With H2O2Mixing it is molten Liquid) after cleaning 15min, copper foil is impregnated in deionized water, it is dry with nitrogen.It is then added into the quartz for draining air Pipe, when quartz ampoule internal pressure reaches 5 × 10-3When Torr, it is passed through H2, while quartz ampoule is heated to 1000 DEG C, after continuing 30min, Continuously it is being passed through H2When (flow velocity 10sccm), it is passed through the CH that flow velocity is 5sccm4Gas, so that graphene continuously increases.30min Afterwards, stop being passed through CH4, quartz ampoule is in H2It is cooled to room temperature in stream, obtains the graphene grown on copper foil.
Step B, electrode layer is prepared；
Substrate (silicon wafer or PET) is cleaned by ultrasonic 5min in acetone, isopropanol and deionized water respectively, with the side of hot evaporation Method plates 50nm layer gold, with ultraviolet exposure machine photoetching layer gold, forms the metal layer including source electrode and drain electrode and/or grid.
Step C, graphene semiconductor layer is prepared；
The chlorobenzene solution of spin coating methyl methacrylate (PMMA) on the graphene grown on copper foil, plasma is done at the back side After body is etched away the graphene at the back side, it is immersed in 3h in ammonium persulfate and dissolves copper.The PMMA/ graphite of copper will be completely dissolved Alkene layer is transferred in substrate, washes off the PMMA on graphene with acetone, with ultraviolet exposure machine photoetching graphene layer, makes graphene layer Two sides it is concordant with the side of source electrode and drain electrode respectively.
Step D, ionic gel grid electric double layer is prepared；
Ionic gel liquid is by bis- (trifluoromethyl sulfonyl) imines of ionic liquid 1- ethyl-3-methylimidazole quinoline ([EMIM] [TFSI]), the mixing of -2 methyl Propafenone of monomer polyethyleneglycol diacrylate monomer (PEGDA) and 2- hydroxyl are molten Liquid, 2 methyl Propafenone (HOMPP) of photoinitiator are mixed with mass ratio 90: 8: 2.
Channel-shaped is surrounded in substrate with adhesive tape, ionic gel is added in centre, under ultraviolet light, with mask exposure 10 Second.Under ultraviolet light, initiator HOMPP is generated free radicals and acrylate reactions, causes monomer PEG-DA polymerization；The portion of non-light transmission Divide no polymerization reaction, can be washed off with deionized water.
Step E is prepared and is coated protective coating
The preparation of protective coating: under room temperature, the perfluoro capryl three of 5ml tetraethyl orthosilicate (TEOS) and (0.5ml~2ml) Ethoxysilane (FAS) is scattered in 25ml ethyl alcohol, and the 25ml ethyl alcohol containing 28% ammonium hydroxide of 6ml is gradually added dropwise into this solution Solution is vigorously stirred 10 hours with the revolving speed of 500~700rpm/s, obtains hydrophobic sol liquid.It is dried in vacuo, is dredged after centrifugation Water nanoparticle；
The hydrophobic nano-particles of 0.9g are dissolved in the tetrafluoro furans (THF) of 20-40ml, and the perfluor for adding 0.6~1.5g is pungent The dimethyl silicone polymer (PDMS) of ethyl triethoxy silicane alkane (FAS) and 0.4~0.8g, ultrasound 1 hour form solution A； 0.04-0.08g, model sylgardl84 PDMS curing agent be dissolved in the THF of 20~40ml and form solution B.In use, will Solution A, B mixing, 15~30min of ultrasound are coated in ionic gel dielectric layer surface, are formed and protected after 2~3h at a temperature of 60 DEG C Protect coating.
There are two types of the frictions of form for the present embodiment to provide gate voltage for transistor: (1) additional friction generator provides grid Voltage (electrode layer includes grid), (2) ionic gel dielectric layer provide gate voltage as frictional layer (electrode layer does not include grid)； It is to be noted that the first situation, ionic gel dielectric layer can not have to coating protective coating, and second situation needs to coat Protective coating.
When the disclosure provides gate voltage by additional friction generator, friction electronics application can be probed into and be situated between in electric double layer grid The sensitivity and accuracy of matter transistor provide basis and ensure for intelligence and the systematicness of electronic skin；Ionic gel is made When providing gate voltage for frictional layer, basis is provided and is ensured for the integration of electronic skin；It is preferred that using PET as flexible base The performance of the friction generator driving transistor at bottom, provides the foundation and ensures for stickiness, the wearable property of electronic skin.
In some embodiments of the present disclosure, half-metal (semi-metallic) characteristic based on graphene, it is not only The channel material that can serve as transistor can also be used as grid and source, drain electrode, electrode layer can be changed to Graphene electrodes, can Simplify technique.
In some embodiments of the present disclosure, the driving electronics skin certainly based on friction electronics electric double layer grapheme transistor Skin, frictional layer includes the material of friction electrode sequence calibration, such as copper foil, aluminium foil, nylon, silk and/or wool；Rub electrode sequence compared with Negative material, including polytetrafluoroethylene (PTFE), polyvinyl fluoride (PVC), dimethyl silicone polymer (PDMS) and/or polyimides.
Grapheme transistor provided by the invention, the ionic gel dielectric layer or protective coating and positive or negative friction electricity The friction of pole material can provide grid voltage and drive the transistor, generate transducing signal, can be used as from driving electronics skin Skin is applied in intelligent sensing field.The grapheme transistor proposed below by way of specific embodiment to the disclosure and its preparation side Method and oneself driving electronic skin are described in detail.
Embodiment 1
The present embodiment proposes that (open-circuit voltage is for a kind of electrical property by grapheme transistor and additional friction generator The driving electronic skin certainly of gate voltage 2V) is provided.
Grapheme transistor includes basal layer, electrode layer, graphene layer and ionic gel dielectric layer, in which: electrode layer packet Source electrode, the drain and gate for being formed in and being independently distributed on the same surface of basal layer are included, source electrode is between drain and gate；Graphite Alkene layer is located at the upper surface of source electrode and drain electrode, and two sides are concordant with the side of source electrode and drain electrode respectively；Ionic gel dielectric layer Positioned at the upper surface of graphene layer and grid, and partial ionic gel dielectric layer and gate contact.
Friction generator is fixed on pinpoint displacement platform, and by the output end of friction generator respectively with crystal The grid of pipe is connected with ground terminal.Initially, two contact frictional layers of friction generator completely attach to, and are displaced by process control Platform presses the equidistant movement of designed displacement, so that two contact frictional layers of friction generator equidistantly separate.
It is transfer curve of the grapheme transistor under different source-drain voltages as shown in Fig. 5 (a), curve is thrown in approximate Object wire shaped shows that graphene is bipolar transmission feature；And operation voltage is only that 2V can regulate and control, and shows that ionic gel is situated between The biggish capacitor of electric layer reduces operation voltage.
It is friction generator using polytetrafluoroethylene (PTFE) (PTFE) and copper as friction material as shown in Fig. 5 (b), PTFE is grounded, Copper is contacted with the gate electrode of grapheme transistor, between the CONTACT WITH FRICTION layer that friction generator is altered in steps apart from when, stone Transfer curve (the V of black alkene transistords=0.1V), it is known that drain current (Drain current, Id) be changed stepwise, show to rub Wiping generator can be used as grid and provide gate voltage well for transistor.And between two CONTACT WITH FRICTION layers of friction generator Distance increases, and friction generator potential is bigger, and the gate voltage applied to transistor is bigger.The schematic diagram of (b) according to fig. 2, when rubbing When the wiping electrode sequence copper being positive and the gate electrode of grapheme transistor contact, it is equivalent to and applies negative gate voltage to transistor, with Distance increase, the increase of negative grid voltage promotes in graphene-channel hole concentration to increase, IdAlso it increases with it.
It is curve of output of the grapheme transistor under different grid voltages as shown in Fig. 5 (c).The curve from figure it is found that Leakage current IdWith drain voltage VdsPreferable linear relationship is presented, shows to contact between graphene layer and source electrode, drain electrode preferably.Together When, IdAbsolute value with gate voltage VgThe increase of absolute value and increase, show gate voltage it is bigger to transistor carrier transmission Regulation is more obvious.
As shown in Fig. 5 (d), when measuring friction different distance between two contact frictional layers for wiping generator, transistor Curve of output.The contact frictional layer of initial time, friction generator completely attaches to, since friction electronegativity is different, surface difference Induce opposite charge.But due to charge balance, gate voltage, therefore the I of transistor are not provided for transistordIt is lower.When Leave 50 μm of lesser distance, the I of transistor in the two surfacesdIt improves.In order to balance surface charge, charge movement is generated, is produced Raw potential difference, since the output end of friction generator is connected with the grid of transistor with ground terminal respectively, friction generator Gate voltage is provided for transistor.Fig. 5 (d) is had found compared with Fig. 5 (c), plots changes are consistent, gate voltage variation step pitch, 100 μm of distance change consistent with grid voltage absolute value variation 0.05V.Curve shows I in Fig. 5 (d)dWith VdsBetween preferable line is presented Sexual intercourse, IdIncrease with the increase of two CONTACT WITH FRICTION layer relative movement distances of friction generator, shows friction generator It can be used as grid and provide gate voltage well for transistor, distance increases, and the electrostatic potential generated by friction generator is bigger, right The gate voltage that transistor applies is bigger, is more obvious to the regulation of transistor carrier transmission.
The above frictional property and electrical property are relatively shown: this electric double layer transistor based on friction electronics, which has, to be stablized Property, meet the actual requirement of self-driving type electronic skin.
Embodiment 2
To realize the integrated of friction electronics and electric double layer gate medium transistor, the present embodiment proposes a kind of electric from driving Sub- skin, including friction material and grapheme transistor, allow ionic gel dielectric layer as one of frictional layer and positive or negative friction Polar friction material is separate, and provides gate voltage for transistor.Selecting differentiated friction electronegativity respectively is positive and negative rub Wipe material.
Grapheme transistor includes basal layer, electrode layer, graphene layer, ionic gel dielectric layer and protective coating, in which: Electrode layer includes being formed in the source electrode and drain electrode being independently distributed on the same surface of basal layer；Graphene layer is located at source electrode and drain electrode Upper surface, two sides are concordant with the side of source electrode and drain electrode respectively；Ionic gel dielectric layer is located at the upper surface of graphene layer； Protective coating is located at the upper surface of graphene layer.
By the contact separation of friction material and protective coating, so that ionic gel dielectric layer is as electric double layer, so that from The positive/negative ion of interface aggregates between sub- gel dielectric layer and graphene layer, so that gate voltage is provided to grapheme transistor, In, basal layer uses silicon wafer.
If Fig. 6 (a)~Fig. 6 (f) shows friction material directly with ionic gel friction, the response of grapheme transistor believes Number.Transistor (source-drain electrode silver paste extraction wire, conducting wire are connected on semi-conductor test instrument) and friction material are separately fixed at essence Determine opposite two face of the displacement platform of position.Initially, friction material copper and ionic gel completely attach to, and pass through process control position Moving stage presses the equidistant movement of designed displacement, so that friction material is equidistantly separated with ionic gel dielectric layer.
If Fig. 6 (a) shows transfer curve of the grapheme transistor under different source-drain voltages, curve is in approximate parabolic Wire shaped shows that graphene is bipolar transmission feature；And operation voltage is only that 2V can regulate and control, and shows ionic gel dielectric The biggish capacitor of layer reduces operation voltage.
If Fig. 6 (b) is graphene when the copper that electrode sequence is positive that rubs being used to rub ionic gel dielectric layer as friction material (drain voltage is set as V to the transfer curve of transistor hereinds=0.1V), it is seen that friction material and graphite is altered in steps The distance between alkene transistor, IdIt is changed stepwise, shows that ionic gel dielectric layer can be used as grid and mention well for transistor For gate voltage, and the distance between friction material and grapheme transistor increase, and the potential for the generation that rubs is bigger, applies to transistor The gate voltage added is bigger, and since graphene is hole transport, with the increase of negative grid voltage, IdIncrease；And it can from figure Out, when the distance between friction material and grapheme transistor knots modification are identical, IdVariation delta IdEqually, show the electronics The stability of skin is preferable.This is because copper comes anode in friction electric polarity sequence, contact, loses with ionic gel dielectric layer De-electromation, so that it is negatively charged on the interface of ionic gel dielectric layer and protective coating, so that ionic gel dielectric layer and graphite Interface between alkene layer incudes negative electrical charge, is equivalent to and applies minus gate voltage to grapheme transistor, since graphene is p-type, hole Transmission is better than electron-transport, and therefore, the distance between friction material and grapheme transistor increase, and output electric current rises.
If Fig. 6 (c) shows curve of output of the grapheme transistor under different grid voltages, curve shows I in figuredWith VdsPreferable linear relationship is presented, shows that the contact between graphene and source-drain electrode is preferable.Meanwhile IdAbsolute value with VgAbsolutely The increase of value is increased.Show that the bigger regulation to transistor carrier transmission of gate voltage is more obvious.
Fig. 6 (d) is shown between friction material and grapheme transistor when having different distance, and the output of transistor is bent Line.Start, friction material and grapheme transistor completely attach to, and since friction electronegativity is different, surface is respectively induced out on the contrary Charge.But due to charge balance, gate voltage, therefore the I of transistor are not provided for transistordIt is lower.When the two surfaces Leave 50 μm of lesser distance, the I of transistordIt improves.In order to balance surface charge, generation charge is mobile, generates potential difference, by It is connected respectively with the grid of transistor with ground terminal in the output end of friction generator, therefore, friction generator mentions for transistor For gate voltage.Compare Fig. 6 (d) and Fig. 6 (c) and find that plots changes are consistent, the variation step pitch of gate voltage, friction material with Every 100 μm of the variation of the distance between grapheme transistor (in figure D1 to D7 consistent with the every variation trend of 0.05V of grid voltage absolute value Value represent distance, each interval increases by 100 μm), show IdWith VdsPreferable linear relationship, I is presenteddWith friction material with The increase of grapheme transistor distance and increase, show that ionic gel dielectric layer can provide well for transistor as grid Gate voltage, and distance increases between friction material and grapheme transistor, the electrostatic potential generated by friction generator is bigger, to crystalline substance The gate voltage that body pipe applies is bigger, is more obvious to the regulation of transistor carrier transmission.
If Fig. 6 (e) shows frictional layer and grapheme transistor under reciprocal contact separation, the I of transistordsAt any time Change curve, wherein Vds=0.1V, as seen from the figure, with the contact separation repeatedly between frictional layer and grapheme transistor, IdAs the variation of time is stablized.
I after showing contact separation repeatedly 1000 times such as Fig. 6 (f)dWith time changing curve.Due to ionic gel dielectric The mechanical strength of layer is not ideal enough, wears no resistance, and influences its long-time service, therefore to overcome this disadvantage, the present embodiment from Protective coating, the strength and stability of Lai Zengjia ionic gel dielectric layer are coated on sub- gel.It can be seen that, pass through from Fig. 6 (f) After 1000 times separate repeatedly, curve still maintains stable, IdPeak value changes little with the increase of the number of occurrence.Show this base Meet the actual requirement of self-driving type electronic skin with stability in disclosing for friction electronics electric double layer transistor.
Embodiment 3
The present embodiment proposes that one kind from driving electronic skin, should drive unique difference of electronic skin and embodiment 2 only certainly It is, the basal layer of the present embodiment uses polyethylene terephthalate (PET).
Since electronic skin is applied to human body, to adapt to human body surface shape need, flexibility is the master of electronic skin Want one of target.The present embodiment is the practical application for realizing electronic skin, using flexible substrates PET.
Fig. 7 (a) is shown on PET substrate, transfer curve of the grapheme transistor under different source-drain voltages, can from figure To find out, curve is in approximate parabolic shape, shows that graphene is bipolar transmission feature；And operation voltage is only that 2V can With regulation, show that the biggish capacitor of ionic gel gate dielectric reduces operation voltage.
Fig. 7 (b) is shown on PET substrate, and the copper that friction electrode sequence is positive is as friction material friction grapheme transistor Under, transfer curve (the leakage current V at this time of transistords=0.1V), it is seen that frictional layer and graphene crystalline substance is altered in steps The distance between body pipe, IdIt is changed stepwise, shows that ionic gel dielectric layer can be used as grid and provide grid well for transistor Voltage, and apart from increase, the potential that triboelectricity generates is bigger, and the gate voltage applied to transistor is bigger.Due to the electrode that rubs The material friction ionic gel that sequence is positive, which is equivalent to, provides negative grid voltage, and graphene is hole transport, with negative grid voltage Increase, IdIncrease.When the distance between frictional layer and grapheme transistor knots modification is identical, IdVariation delta IdEqually, show Stability is preferable.
Fig. 7 (c) is shown on PET substrate, curve of output of the grapheme transistor under different grid voltages.Curve in figure Show IdWith VdsBetween preferable linear relationship is presented, show to contact between graphene and source-drain electrode preferably.Meanwhile IdIt is absolute Value is with VgThe increase of absolute value and increase, show gate voltage it is bigger to transistor carrier transmission regulation be more obvious.
Fig. 7 (d) is shown on PET substrate, between frictional layer and grapheme transistor under different distance, the output of transistor Curve compares 7 (d) and finds that plots changes are consistent with Fig. 7 (c), and gate voltage variation step pitch, frictional layer and graphene are brilliant Consistent with the grid voltage absolute value variation trend of 0.5V (value of d1 to d4 represents distance in figure, often for 100 μm of distance change between body pipe One interval increases by 100 μm).I.e. curve shows I in figuredWith VdsBetween preferable linear relationship, I is presenteddWith the increase of distance And increase, show that ionic gel dielectric layer can be used as grid and provide gate voltage, and frictional layer and graphite well for transistor The distance between alkene transistor increases, and the potential for the generation that rubs is bigger, and the gate voltage applied to transistor is bigger, carries to transistor The regulation of stream transmission is more obvious.
Fig. 7 (e) is shown on PET substrate, and frictional layer separates down with grapheme transistor reciprocating contact, the I of transistordsWith The change curve of time, wherein Vds=0.1V.As seen from the figure, when frictional layer and graphene product body pipe are separate repeatedly, IdWith The time variation stablize.
Fig. 7 (f) is shown on PET substrate, after frictional layer separates 1000 times with grapheme transistor reciprocating contact, IdWith The change curve of time, it is seen that curve keeps stablizing, I after 3000 circulationsdPeak value increases with cycle-index Add variation little.Show this disclosing with stability based on friction electronics electric double layer transistor, meets self-driving type electronics The actual requirement of skin.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ", " right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure Content.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some ± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element Word "a" or "an" does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined Form more embodiments.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect, Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore, Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the disclosure Within the scope of.

Claims (16)

1. a kind of grapheme transistor, including basal layer, electrode layer, graphene layer and ionic gel dielectric layer, in which:
The electrode layer includes being formed in the source electrode and drain electrode being independently distributed on the same surface of the basal layer；
The graphene layer is located at the upper surface of the source electrode and drain electrode, and is in contact with the source electrode and drain electrode；
The ionic gel dielectric layer is located at the graphene layer upper surface.
2. grapheme transistor according to claim 1, wherein the electrode layer further include:
The grid for being located at described basal layer the same side with the source electrode and drain electrode and being independently distributed；
Between the drain and gate, the graphene layer is not in contact the source electrode with the grid.
3. grapheme transistor according to claim 2, wherein the ionic gel dielectric layer and the gate upper surface Contact.
4. grapheme transistor according to any one of claim 1 to 3 further includes being located at the ionic gel dielectric layer The protective coating of upper surface；Preferably, which is fluorine-containing coat.
5. grapheme transistor according to any one of claim 1 to 4, wherein the basal layer is flexible material, excellent Choosing includes polyethylene terephthalate.
6. grapheme transistor according to any one of claim 1 to 5, wherein the material of main part packet of the electrode layer Include metal or semiconductor material；Preferably, the semiconductor material includes graphene.
7. grapheme transistor according to any one of claim 1 to 6, wherein the graphene layer is covered in described The upper surface of source electrode and drain electrode；Preferably, the two sides of the graphene layer are concordant with the side of the source electrode and drain electrode.
8. grapheme transistor according to any one of claim 1 to 7, wherein the graphene layer is mono-layer graphite Alkene.
9. grapheme transistor according to any one of claim 1 to 8, wherein the thickness range of the electrode layer is 40~100nm；Ionic gel dielectric layer with a thickness of 300~1000 μm；Protective coating with a thickness of 100~300 μm.
10. a kind of preparation method of grapheme transistor, comprising the following steps:
Electrode layer is prepared in substrate, and the electrode layer is lithographically formed independent source electrode and drain electrode；
Previously prepared graphene layer is transferred to the upper surface of the source electrode and drain electrode, the graphene layer and the source electrode and Drain electrode is in contact；
Ionic gel dielectric layer is prepared on the graphene layer.
11. the preparation method of grapheme transistor according to claim 10, wherein described to be lithographically formed independent source electrode When with drain electrode, the electrode layer has also been lithographically formed grid, and the source electrode is between the drain and gate；The grid Upper surface is also formed with the ionic gel dielectric layer, and is integrated with the ionic gel dielectric layer of the graphene layer upper surface Structure.
12. the preparation method of grapheme transistor described in any one of 0 to 11 according to claim 1, wherein in the graphite It is prepared on alkene layer further comprising the steps of after ionic gel dielectric layer:
Protective coating is prepared, and the protective coating is coated to the upper surface of the ionic gel dielectric layer；Preferably, the guarantor Shield coating is fluorine-containing coat.
13. the preparation method of grapheme transistor according to claim 12, wherein the method for the preparation protective coating Include:
Hydrophobic nano-particles are dissolved in tetrafluoro tetrahydrofuran solution, and after perfluoro capryl triethoxysilane and dimethyl silicone polymer is added It is ultrasonically formed solution A；
Dimethyl silicone polymer is dissolved in tetrafluoro tetrahydrofuran solution, forms solution B；
The protective coating is ultrasonically formed after the solution A is mixed with solution B.
14. it is a kind of according to claim 1, the application method of grapheme transistor described in any one of 4 to 8, wherein by just Or the polar friction material of negative friction rubs the ionic gel dielectric layer or protective coating, provides the grid of the transistor Voltage.
15. a kind of application method of the grapheme transistor according to any one of claim 2 to 8, wherein by just or The negative friction polar friction material friction ionic gel dielectric layer or protective coating, provide the grid electricity of the transistor Pressure；
Alternatively, applying grid voltage in the grid.
16. a kind of from driving electronic skin, wherein including grapheme transistor described in any one of claim 1 to 8, institute It is brilliant to state graphene described in ionic gel dielectric layer or protective coating and the friction-driven of the positive or negative polar friction material of friction Body pipe generates transducing signal.
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* Cited by examiner, † Cited by third party
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CN110600538A (en) * 2019-08-15 2019-12-20 北京纳米能源与系统研究所 Application of ionic gel in graphene transfer and preparation of graphene transistor, graphene transistor and preparation method thereof
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080191200A1 (en) * 2007-02-08 2008-08-14 Regents Of The University Of Minnesota Ion gels and electronic devices utilizing ion gels
CN103354429A (en) * 2013-03-12 2013-10-16 国家纳米科学中心 Sliding friction nano generator and power generation method
CN103856096A (en) * 2012-12-07 2014-06-11 纳米新能源（唐山）有限责任公司 High-power nanometer friction generator and manufacturing method thereof
CN104600114A (en) * 2013-11-01 2015-05-06 北京纳米能源与系统研究所 Friction electric field effect transistor
WO2016023490A1 (en) * 2014-08-12 2016-02-18 北京纳米能源与系统研究所 Back gate field-effect transistor based on friction and contact electrification effects
CN106206683A (en) * 2016-08-31 2016-12-07 湖南航天新材料技术研究院有限公司 A kind of graphene-based field-effect transistor and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080191200A1 (en) * 2007-02-08 2008-08-14 Regents Of The University Of Minnesota Ion gels and electronic devices utilizing ion gels
CN103856096A (en) * 2012-12-07 2014-06-11 纳米新能源（唐山）有限责任公司 High-power nanometer friction generator and manufacturing method thereof
CN103354429A (en) * 2013-03-12 2013-10-16 国家纳米科学中心 Sliding friction nano generator and power generation method
CN104600114A (en) * 2013-11-01 2015-05-06 北京纳米能源与系统研究所 Friction electric field effect transistor
WO2016023490A1 (en) * 2014-08-12 2016-02-18 北京纳米能源与系统研究所 Back gate field-effect transistor based on friction and contact electrification effects
CN105470313A (en) * 2014-08-12 2016-04-06 北京纳米能源与系统研究所 Back-gate field effect transistor based on contact electrification
CN106206683A (en) * 2016-08-31 2016-12-07 湖南航天新材料技术研究院有限公司 A kind of graphene-based field-effect transistor and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BYEONG UK YE等: "Electrospun Ion Gel Nanofibers for Flexible Triboelectric Nanogenerator Electrochemical Effect on Output Power", 《NANOSCALE》 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110600538A (en) * 2019-08-15 2019-12-20 北京纳米能源与系统研究所 Application of ionic gel in graphene transfer and preparation of graphene transistor, graphene transistor and preparation method thereof
CN110600538B (en) * 2019-08-15 2023-05-09 北京纳米能源与系统研究所 Application of ionic gel in graphene transfer and preparation of graphene transistor, graphene transistor and preparation method of graphene transistor
CN111128728A (en) * 2019-12-13 2020-05-08 清华大学 Stretchable transistor and preparation method thereof
CN111128728B (en) * 2019-12-13 2021-08-31 清华大学 Stretchable transistor and preparation method thereof
CN111725302A (en) * 2020-06-22 2020-09-29 西安电子科技大学 Graphene transistor based on patterned substrate and preparation method
CN112006813A (en) * 2020-09-02 2020-12-01 清华大学 Flexible self-driven pressure sensor and manufacturing method thereof
CN112006813B (en) * 2020-09-02 2021-07-06 清华大学 Flexible self-driven pressure sensor and manufacturing method thereof
CN113998666A (en) * 2021-10-21 2022-02-01 北京理工大学 High-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain
CN114512550A (en) * 2021-12-30 2022-05-17 中南大学 Transistor with negative photoconductive effect and preparation method thereof
CN114512550B (en) * 2021-12-30 2024-01-16 中南大学 Transistor with negative photoconductive effect and preparation method thereof
CN114768045A (en) * 2022-03-28 2022-07-22 重庆师范大学 Hemodialysis tube and antibacterial method thereof

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