CN109390298A - Sandwich fin and its burning equipment and method for cooking - Google Patents
Sandwich fin and its burning equipment and method for cooking Download PDFInfo
- Publication number
- CN109390298A CN109390298A CN201811460791.0A CN201811460791A CN109390298A CN 109390298 A CN109390298 A CN 109390298A CN 201811460791 A CN201811460791 A CN 201811460791A CN 109390298 A CN109390298 A CN 109390298A
- Authority
- CN
- China
- Prior art keywords
- layer
- suprasil
- sandwich
- opaque quartz
- fin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 14
- 238000010411 cooking Methods 0.000 title description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 87
- 239000010453 quartz Substances 0.000 claims abstract description 40
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 238000003466 welding Methods 0.000 claims abstract description 8
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 235000014612 sandwich biscuits Nutrition 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000010304 firing Methods 0.000 claims description 4
- 239000003708 ampul Substances 0.000 claims description 2
- 239000000284 extract Substances 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 150000005837 radical ions Chemical class 0.000 description 2
- 239000006004 Quartz sand Substances 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermally Insulated Containers For Foods (AREA)
Abstract
A kind of sandwich fin, for the heat insulation layer in semiconductor diffusion process, the sandwich fin includes: the first suprasil layer, opaque quartz layer, the second suprasil layer, opaque quartz layer is sandwiched between the first suprasil layer and the second suprasil layer, and, the upper surface of opaque quartz layer and the first suprasil layer welding, the lower surface of opaque quartz layer and the second suprasil layer welding.The area size of opaque quartz layer is less than the first suprasil layer or/and the second suprasil layer, so that sandwich fin is shaped like sandwich biscuits.
Description
Technical field
The invention belongs to ic manufacturing technology field, in particular to a kind of sandwich fin and its burning equipment and firing
Method.
Background technique
In integrated circuit diffusion technique processing procedure, needs to use opaque quartz material as thermal insulation layer and (play heat-insulation and heat-preservation
Effect), such as the thermal insulation layer in insulation barrel.But after being developed to 12 cun or even 18 cun by 8 cun with diameter wafer, to quartz
The requirement of the purity and surface particles of material is higher and higher.At this moment, it is just highlighted as the shortcoming of opaque quartz material
Come.
Opaque quartz be by quartz sand under oxyhydrogen flame status without complete penetration (without vitrifying) situation
Under be process.Because internal there are intensive bubble populations, so appearance is milky in incomplete vitrified situation
Opaque quartz, therefore heat-insulated effect can be played.But this material is to be process by hydrogen-oxygen gas flame, and inside has
Intensive bubble population is easy to produce particle so contained OH radical ion is more, this is also to avoid in 12 cun or more wafer processing procedures
Avoid as taboo place.
Summary of the invention
The embodiment of the invention provides a kind of sandwich fin and its burning equipments and method for cooking, use merely for solving
Opaque quartz, can not the problem used in 12 cun or more wafer volume diffusion process as thermal insulation layer.
One of the embodiment of the present invention, a kind of sandwich fin, for the heat insulation layer in semiconductor diffusion process, the folder
Heart fin includes: the first suprasil layer, opaque quartz layer, the second suprasil layer.Why be known as sandwich fin, be by
Opaque quartz inside it is wrapped in by the suprasil of upper and lower surface exactly likes sandwich or sandwich biscuits.
Opaque quartz layer is sandwiched between the first suprasil layer and the second suprasil layer, also, opaque quartz
The upper surface of layer and the first suprasil layer welding, the lower surface of opaque quartz layer and the second suprasil layer welding.
The area size of opaque quartz layer is less than the first suprasil layer or/and the second suprasil layer, so that sandwich
Fin is shaped like sandwich biscuits.
The present invention utilizes opaque quartz every thermal property, on it, after lower surface increases by 2 suprasil pieces, it is ensured that
In the case where heat preservation, barrier OH radical ion and the generation for reducing particle, so that sandwich fin of the invention can be used big
In size wafer diffusion process in insulation barrel or insulating layer.
Detailed description of the invention
The following detailed description is read with reference to the accompanying drawings, above-mentioned and other mesh of exemplary embodiment of the invention
, feature and advantage will become prone to understand.In the accompanying drawings, if showing by way of example rather than limitation of the invention
Dry embodiment, in which:
Burning equipment schematic diagram in Fig. 1 embodiment of the present invention.
Sandwich fin and method for cooking schematic diagram in Fig. 2 embodiment of the present invention.
1 --- sandwich fin, 101 --- the first suprasil layer, 102 --- opaque quartz layer, 103 --- second thoroughly
Bright quartz layer,
2 --- flame gun, 3 --- flame gun support frame, 4 --- water-cooled condenser, 5 --- turntable, 6 --- vacuum pump.
Specific embodiment
According to one or more embodiment, as shown in Figure 2.A kind of sandwich fin, in semiconductor diffusion process
Heat insulation layer, the sandwich fin include: the first suprasil layer, opaque quartz layer, the second suprasil layer.Impermeable alum
English layer is sandwiched between the first suprasil layer and the second suprasil layer, also, the upper surface of opaque quartz layer and first
Suprasil layer welding, the lower surface of opaque quartz layer and the second suprasil layer welding.The sgare chain of opaque quartz layer
It is very little less than the first suprasil layer or/and the second suprasil layer so that sandwich fin is shaped like sandwich biscuits.
According to one or more embodiment, as shown in Figure 1.A kind of burning equipment of sandwich fin, the burning equipment packet
It includes:
Flame gun, the flame gun are installed on a flame gun support frame;
Turntable, sandwich fin are placed on turntable, and the setting height of flame gun enables flame gun to fuse sandwich wing
Piece;
Turntable, setting are rotated synchronously in turntable lower part with turntable;
Vacuum pump is placed on turntable, is connected to by water-cooled condenser with sandwich fin.
In this example, flame gun processes sandwich fin using hydrogen-oxygen gas flame, can take out when being vacuumized with vacuum pump
To a large amount of thermal energy, so having installed water-cooled condenser additional does cooling, to protect vacuum pump.Turntable and turntable, which are driven by a motor, to be turned
Dynamic, turntable and turntable are rotated, and flame gun can then remain stationary.
According to one or more embodiment, a kind of processing method of sandwich fin, comprising the following steps:
S101 will be controlled to a vacuum pump after the punching of the second suprasil layer by quartz ampoule;
Opaque quartz layer is placed on the second suprasil layer by S102;
First suprasil layer is placed on opaque quartz layer by S103;
S104 opens vacuum pump and extracts vacuum, with the flame of flame gun by the first suprasil layer and opaque quartz layer
Firing is fused together;
S105, after sandwich fin is turned over, according to the method for step S104, by the first suprasil layer and opaque quartz
Layer is fired and is fused together.
It is worth noting that although foregoing teachings are by reference to several essences that detailed description of the preferred embodimentsthe present invention has been described creates
Mind and principle, it should be appreciated that, the invention is not limited to the specific embodiments disclosed, the division also unawareness to various aspects
Taste these aspect in feature cannot combine, it is this divide merely to statement convenience.The present invention is directed to cover appended power
Included various modifications and equivalent arrangements in the spirit and scope that benefit requires.
Claims (4)
1. a kind of sandwich fin, for the heat insulation layer in semiconductor diffusion process, which is characterized in that the sandwich fin packet
It includes: the first suprasil layer, opaque quartz layer, the second suprasil layer,
Opaque quartz layer is sandwiched between the first suprasil layer and the second suprasil layer, also, opaque quartz layer
Upper surface and the first suprasil layer welding, the lower surface of opaque quartz layer and the second suprasil layer welding.
2. sandwich fin according to claim 1, which is characterized in that the area size of opaque quartz layer is thoroughly less than first
Bright quartz layer or/and the second suprasil layer, so that sandwich fin is shaped like sandwich biscuits.
3. a kind of burning equipment of sandwich fin, for firing sandwich fin as described in claim 1, which is characterized in that should
Burning equipment includes:
Flame gun, the flame gun are installed on a flame gun support frame;
Turntable, sandwich fin are placed on turntable, and the setting height of flame gun enables flame gun to fuse sandwich fin;
Turntable, setting are rotated synchronously in turntable lower part with turntable;
Vacuum pump is placed on turntable, is connected to by water-cooled condenser with sandwich fin.
4. a kind of processing method of sandwich fin, using burning equipment as claimed in claim 3, which is characterized in that including following step
It is rapid:
S101 will be controlled to a vacuum pump after the punching of the second suprasil layer by quartz ampoule;
Opaque quartz layer is placed on the second suprasil layer by S102;
First suprasil layer is placed on opaque quartz layer by S103;
S104 opens vacuum pump and extracts vacuum, and the first suprasil layer and the firing of opaque quartz layer are fused together;
After turning over sandwich fin, according to the method for step S104, the first suprasil layer and opaque quartz layer are burnt by S105
System is fused together.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811460791.0A CN109390298A (en) | 2018-12-01 | 2018-12-01 | Sandwich fin and its burning equipment and method for cooking |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811460791.0A CN109390298A (en) | 2018-12-01 | 2018-12-01 | Sandwich fin and its burning equipment and method for cooking |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109390298A true CN109390298A (en) | 2019-02-26 |
Family
ID=65429763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811460791.0A Pending CN109390298A (en) | 2018-12-01 | 2018-12-01 | Sandwich fin and its burning equipment and method for cooking |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109390298A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004091314A (en) * | 2002-07-08 | 2004-03-25 | Shinetsu Quartz Prod Co Ltd | Multilayer quartz glass sheet and tool made of quartz glass |
CN101079371A (en) * | 2006-05-22 | 2007-11-28 | 台湾圆益石英股份有限公司 | Quartz component, heat-preservation canister and reactor and making method for quartz component and heat-preservation |
KR20090077255A (en) * | 2008-01-10 | 2009-07-15 | 주식회사 원익 쿼츠 | Preparation method of multilayer quartz glass and apparatus for preparing multilayer quartz glass |
CN208970504U (en) * | 2018-12-01 | 2019-06-11 | 上海强华实业股份有限公司 | Sandwich fin and its burning equipment |
-
2018
- 2018-12-01 CN CN201811460791.0A patent/CN109390298A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004091314A (en) * | 2002-07-08 | 2004-03-25 | Shinetsu Quartz Prod Co Ltd | Multilayer quartz glass sheet and tool made of quartz glass |
CN101079371A (en) * | 2006-05-22 | 2007-11-28 | 台湾圆益石英股份有限公司 | Quartz component, heat-preservation canister and reactor and making method for quartz component and heat-preservation |
KR20090077255A (en) * | 2008-01-10 | 2009-07-15 | 주식회사 원익 쿼츠 | Preparation method of multilayer quartz glass and apparatus for preparing multilayer quartz glass |
CN208970504U (en) * | 2018-12-01 | 2019-06-11 | 上海强华实业股份有限公司 | Sandwich fin and its burning equipment |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1315179C (en) | Semiconductor device including a semiconductor substrate formed with a shallow impurity region, and a fabrication method for the same | |
JP2004063574A5 (en) | ||
CN103382079B (en) | The method for sealing of toughened vacuum glass, preparation method and toughened vacuum glass | |
CN208970504U (en) | Sandwich fin and its burning equipment | |
CN111750717B (en) | Method of forming 3D vapor cell | |
CN104681663A (en) | Solar Battery Manufacturing Technique And Solar Battery Processing Technique | |
TW201736315A (en) | Method for manufacturing glass panel unit, method for manufacturing building fittings, apparatus for manufacturing glass panel unit, and glass panel unit | |
Rebohle et al. | Flash lamp annealing | |
JP2009283464A (en) | Sealing device of vacuum element and sealing method of vacuum element | |
CN109390298A (en) | Sandwich fin and its burning equipment and method for cooking | |
US20190113227A1 (en) | Miniature liquid combustor having double pre-heating structure, and combustion method thereof | |
CN100373533C (en) | Semiconductor and method of manufacturing the same | |
CN100400790C (en) | Sealing getter and unsealing method for vacuum glass | |
CN106575684A (en) | Method for producing differently doped regions in a silicon substrate, more particularly for a solar cell | |
CN101587807B (en) | Sealing device and sealing method of vacuum devices | |
CN107680905A (en) | Including activating the manufacture method of dopant and there is the semiconductor device of precipitous knot | |
CN105895634A (en) | Cmos device and manufacturing method thereof | |
CN204043374U (en) | A kind of vacuum continuous fritting furnace dewaxing device | |
CN102779739A (en) | Method for manufacturing power semiconductor device back | |
KR101585910B1 (en) | Method of manufacturing an electric wave absorber and electric wave absorber | |
US9546109B2 (en) | Method for performing a frit firing cycle in the manufacturing of a vacuum solar thermal panel | |
TW588395B (en) | Method for forming a dielectric film | |
Chu et al. | Numerical simulation on a new cylindrical target for Z-pinch driven inertial confinement fusion | |
CN104993020B (en) | The selenylation reaction device that can improve selenizing quality and the method carrying out selenylation reaction | |
KR960012288A (en) | Wafer for semiconductor device manufacturing and its manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |