CN109390240A - The manufacturing method and bonding laminated body of semiconductor device - Google Patents

The manufacturing method and bonding laminated body of semiconductor device Download PDF

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Publication number
CN109390240A
CN109390240A CN201810862224.1A CN201810862224A CN109390240A CN 109390240 A CN109390240 A CN 109390240A CN 201810862224 A CN201810862224 A CN 201810862224A CN 109390240 A CN109390240 A CN 109390240A
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China
Prior art keywords
adhesive layer
layer
semiconductor device
manufacturing
bonding
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CN201810862224.1A
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Chinese (zh)
Inventor
冈本直也
山田忠知
菊池和浩
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Lintec Corp
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Lintec Corp
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Publication of CN109390240A publication Critical patent/CN109390240A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect

Abstract

The present invention provides a kind of manufacturing method of semiconductor device, and this method is with the following process: pressing from both sides the process that substrate (11) and semiconductor element are pasted across adhesive layer；The adhesive layer is set to be solidified to form the process for solidifying adhesive layer (12A)；The process that multiple semiconductor element encapsulations are formed into the seal (3) with sealing resin layer；Substrate (11) is removed from seal (3) without by the process for solidifying adhesive layer (12A) and being removed from seal (3)；The process for forming the wiring layer again being electrically connected with the semiconductor element；And the process for being electrically connected external terminal electrode with the wiring layer again.

Description

The manufacturing method and bonding laminated body of semiconductor device
Technical field
The present invention relates to the manufacturing method of semiconductor device and bonding laminated bodies.
Background technique
In recent years, the miniaturization, lighting and multifunction of electronic equipment continue to develop.It is mounted for electronic equipment Semiconductor device also requires miniaturization, slimming and densification.Semiconductor chip (sometimes referred to simply as chip) is mounted on sometimes Close in the encapsulation of its size.Such encapsulation is also sometimes referred to as chip size packages (Chip Scale Package； CSP).As one of the technique of manufacture CSP, wafer-level packaging (Wafer Level Package can be enumerated；WLP).In WLP In, external electrode etc. will formed before encapsulation singualtion in chip circuit forming face by cutting, finally will include chip Encapsulated wafer cutting, carry out singualtion.As WLP, fan-in (Fan-In) type can be enumerated and be fanned out to (Fan-Out) type.? In the WLP (hereinafter, sometimes referred to simply as FO-WLP) of fan-out-type, semiconductor chip is coated with containment member, becomes and compares chip The big region of size forms semiconductor chip seal, not only in the circuit face of semiconductor chip, but also in the table of containment member Face region also forms wiring layer again and external electrode.
For example, describing the core used in the manufacturing methods such as WLP in document 1 (Japanese Unexamined Patent Publication 2012-62372 bulletin) Piece, which is fixed temporarily, uses adhesive tape.Describe the following contents in document 1: the adhesive tape is used for pressure when preventing because of resin seal Power and cannot keep chip, from designated position deviate unfavorable condition.Such unfavorable condition is sometimes referred to as chip offset.
However, the adhesive tape recorded in document 1 is to be fixed temporarily with adhesive tape, therefore bonding force is low, exists because resin is close Pressure when envelope and so that chip is deviateed the hidden danger of designated position.
Summary of the invention
The purpose of the present invention is to provide make the semiconductor elements such as chip due to a kind of pressure being able to suppress when the resin seal Unfavorable condition that part deviates from designated position and may be implemented multifunction semiconductor device manufacturing method and the system It makes and is bonded laminated body used in method.
The manufacturing method of the semiconductor device of one embodiment of the present invention is with the following process: folder is pasted across adhesive layer The process of substrate and semiconductor element；The adhesive layer is set to be solidified to form the process for solidifying adhesive layer；It will be multiple described Semiconductor element encapsulation forms the process with the seal of sealing resin layer；The substrate is removed from the seal Without by the process for solidifying adhesive layer and being removed from the seal；Formation is electrically connected again with the semiconductor element The process of wiring layer；And the process for being electrically connected external terminal electrode with the wiring layer again.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, preferably multiple semiconductor elements are glued It is affixed on the adhesive layer of the bonding laminated body with the substrate and the adhesive layer.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the preferably described adhesive layer is directly laminated in The substrate.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, preferably in the adhesive layer and the base It include adhesive phase between material.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the substrate is shelled from the seal From process preferably not by the solidification adhesive layer removed from the seal and described adhesive layer with it is described solid Change the process of the interface removing of adhesive layer.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, described adhesive layer is preferably thermal expansivity Adhesive phase.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the semiconductor element preferably has described Adhesive layer.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the described of the preferably described semiconductor element is glued Connect the described adhesive layer that oxidant layer fits in the bonding sheet with substrate and adhesive phase.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the substrate is shelled from the seal From process preferably not by the solidification adhesive layer removed from the seal and described adhesive layer with it is described solid Change the process of the interface removing of adhesive layer.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the preferably described adhesive layer includes at least the One adhesive layer and second bonding agents layer, and the material of the first bonding agents layer and the second bonding agents layer is different.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, the adhesive layer is made to be solidified to form institute State solidify adhesive layer process preferably so that the first bonding agents layer is solidified to form the first solidification adhesive layer and make institute State the process that second bonding agents layer is solidified to form the second solidification adhesive layer.
It is preferably viscous across the adhesive layer in folder in the manufacturing method of the semiconductor device of one embodiment of the present invention When pasting multiple semiconductor elements and the substrate, by the opposite with the circuit face with connection terminal of the semiconductor element The element back side of side is pasted towards the adhesive layer, is formd described close by multiple semiconductor element encapsulations Feng Tihou will coat part or all of removing of the sealing resin layer of the circuit face, expose the connection terminal, It is electrically connected the wiring layer again with the connection terminal of exposing.
It is preferably viscous across the adhesive layer in folder in the manufacturing method of the semiconductor device of one embodiment of the present invention When pasting multiple semiconductor elements and the substrate, by the circuit face with connection terminal of the semiconductor element towards institute It states adhesive layer to be pasted, after having removed the substrate from the seal, the described solid of the circuit face will be coated Part or all of removing for changing adhesive layer, exposes the connection terminal, makes the company of the wiring layer and exposing again Connecting terminal electrical connection.
In the manufacturing method of the semiconductor device of one embodiment of the present invention, preferably solidifying the adhesive layer and It is formed before the process for solidifying adhesive layer, reinforcing frame is pasted on the adhesive layer.
The bonding laminated body of one embodiment of the present invention is that have substrate and the adhesive layer containing adhesive composite It is bonded laminated body, the adhesive composite contains binder polymer ingredient and curability composition, can be used for semiconductor device Manufacturing process, the manufacturing process of the semiconductor device is with the following process: multiple semiconductor elements being pasted on described viscous The process for connecing the adhesive layer of laminated body；The adhesive layer is set to be solidified to form the process for solidifying adhesive layer；It will be more A semiconductor element encapsulation and the process for forming seal；The substrate is removed from the seal without will be described Solidify the process that adhesive layer is removed from the seal；Form the work for the wiring layer again being electrically connected with the semiconductor element Sequence；And the process for being electrically connected external terminal electrode with the wiring layer again.
According to one method of the present invention, a kind of pressure being able to suppress when resin seal can be provided due to makes chip etc. Unfavorable condition that semiconductor element deviates from designated position and can realize multifunction semiconductor device manufacturing method.
In addition, according to one method of the present invention, can provide in a kind of manufacturing method for being able to suppress semiconductor device The unfavorable condition that deviates the semiconductor elements such as chip from designated position due to pressure when resin seal and it can realize semiconductor The bonding laminated body of the multifunction of device.
It should be noted that multifunction refers to that the relative positional accuracy that can for example obtain fine and each component is excellent It is different and there is the semiconductor device of wiring layer and external terminal electrode again.
Detailed description of the invention
Figure 1A is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Figure 1B is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 1 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 1 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 1 E is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 2A is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 2 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 2 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 2 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 1st embodiment.
Fig. 3 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 3 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 3 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 3 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 4 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 4 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 4 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 4 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 2nd embodiment.
Fig. 5 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 3rd embodiment.
Fig. 5 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 3rd embodiment.
Fig. 5 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 3rd embodiment.
Fig. 5 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 3rd embodiment.
Fig. 5 E is the sectional view for illustrating the manufacturing method of semiconductor device of the 3rd embodiment.
Fig. 6 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 6 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 6 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 6 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 6 E is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 7 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 7 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 7 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 7 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 4th embodiment.
Fig. 8 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 8 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 8 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 8 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 8 E is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 9 A is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 9 B is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 9 C is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 9 D is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Fig. 9 E is the sectional view for illustrating the manufacturing method of semiconductor device of the 5th embodiment.
Specific embodiment
Bonding laminated body is used in the manufacturing method of the semiconductor device of an embodiment of the invention.Bonding stacking Body has substrate and adhesive layer.It should be noted that in the present specification, bonding laminated body is not to be pasted on adherend The bonding sheet (being fixed temporarily with piece) being stripped afterwards is bonded adhesive layer possessed by laminated body with the adhesive than bonding sheet Layer is more firmly fixed on the bonding force of adherend.
The bonding laminated body of an embodiment of the invention is that have substrate and the bonding agent containing adhesive composite The bonding laminated body of layer, above-mentioned adhesive composite contain binder polymer ingredient and curability composition, can be used for semiconductor The manufacturing process of the manufacturing process of device, above-mentioned semiconductor device is with the following process: multiple semiconductor elements are pasted on The process for stating the above-mentioned adhesive layer of bonding laminated body；Above-mentioned adhesive layer is set to be solidified to form the process for solidifying adhesive layer； The process that multiple above-mentioned semiconductor element encapsulations are formed into seal；Above-mentioned substrate is removed from above-mentioned seal without inciting somebody to action The process that above-mentioned solidification adhesive layer is removed from above-mentioned seal；Form the wiring layer again being electrically connected with above-mentioned semiconductor element Process；And the process for being electrically connected external terminal electrode with above-mentioned wiring layer again.
The manufacturing method of the semiconductor device of an embodiment of the invention is with the following process: by multiple semiconductor elements The process that part is pasted on the above-mentioned adhesive layer of bonding laminated body；It is solidified to form above-mentioned adhesive layer and solidifies adhesive layer Process；The process that multiple above-mentioned semiconductor element encapsulations are formed into the seal with sealing resin layer；By above-mentioned substrate from Process of the removing without removing above-mentioned solidification adhesive layer from above-mentioned seal on above-mentioned seal；Formation is partly led with above-mentioned The process of the wiring layer again of volume elements part electrical connection；And the process for being electrically connected external terminal electrode with above-mentioned wiring layer again.
In addition, also thering is use to include bonding in the manufacturing method of the semiconductor device of an embodiment of the invention The case where bonding laminated body of oxidant layer and adhesive phase.Such bonding laminated body has substrate, adhesive layer and adhesive phase.
In addition, also thering is use to have bonding in the manufacturing method of the semiconductor device of an embodiment of the invention The case where semiconductor element of oxidant layer.In this case, the adhesive layer that semiconductor element has has more viscous than bonding sheet Mixture layer is more firmly fixed on the bonding force of adherend.
In addition, in the manufacturing method of the semiconductor device of an embodiment of the invention, also there is the adhesive layer to include The case where first bonding agents layer and second bonding agents layer.
(the 1st embodiment)
The manufacturing method of the semiconductor device of present embodiment is with the following process: multiple semiconductor elements being pasted on viscous The process for connecing the adhesive layer of laminated body；Above-mentioned adhesive layer is set to be solidified to form the process for solidifying adhesive layer；On multiple The process stated semiconductor element encapsulation and form the seal with sealing resin layer；Above-mentioned substrate is shelled from above-mentioned seal From the process without removing above-mentioned solidification adhesive layer from above-mentioned seal；What formation was electrically connected with above-mentioned semiconductor element The process of wiring layer again；And the process for being electrically connected external terminal electrode with above-mentioned wiring layer again, wherein will be multiple above-mentioned When semiconductor element is pasted on above-mentioned bonding laminated body, by the opposite with the circuit face with connection terminal of above-mentioned semiconductor element The element back side of side is pasted towards above-mentioned adhesive layer, and above-mentioned semiconductor element encapsulation is being formed above-mentioned seal Afterwards, part or all of removing that will coat the above-mentioned sealing resin layer in foregoing circuit face, exposes above-mentioned connection terminal, makes Wiring layer is stated again to be electrically connected with the above-mentioned connection terminal of exposing.
It is preferred that reinforcing frame is pasted before the process for making above-mentioned adhesive layer be solidified to form above-mentioned solidification adhesive layer In above-mentioned adhesive layer.
(substrate)
The substrate of the bonding laminated body of present embodiment is the component for supporting adhesive layer etc..The substrate of bonding laminated body does not have It is particularly limited to.
Substrate is, for example, resin film.As resin film, can be used for example selected from polyethylene film, polypropylene screen, polybutene Film, polybutadiene film, polymethylpentene film, polychloroethylene film, vinyl chloride copolymer film, polyethylene terephthalate film, Poly (ethylene naphthalate) film, polybutylene terephthalate (PBT) film, polyurethane film, vinyl-vinyl acetate copolymer film, Ionomer resin film, ethylene-(methyl) acrylic copolymer film, ethylene-(methyl) acrylate copolymer film, polystyrene At least any one film in film, polycarbonate membrane, polyimide film and fluororesin film.In addition, can also make as substrate With their cross linking membrane.In addition, substrate is also possible to their stacked film.
In addition, substrate for example can be rigid support body.Mechanical strength and heat-resisting can be considered in the material of rigid support body Property etc. and be suitably determined.The material of rigid support body can be enumerated for example: metal material, non-metal inorganic material, resin material, And composite material etc..As metal material, it can be cited for example that SUS etc..As non-metal inorganic material, it can be cited for example that Glass and silicon wafer etc..As resin material, can enumerate for example: epoxy, ABS, acrylic compounds, engineering plastics, Super Engineering Plastics, polyimides and polyamidoimide etc..As composite material, it can be cited for example that glass epoxy resin etc..Its In, the material of rigid support body is preferably selected from any material in SUS, glass and silicon wafer etc..It, can be with as engineering plastics It enumerates: nylon, polycarbonate (PC) and polyethylene terephthalate (PET) etc..As superengineering plastics, Ke Yilie It lifts: polyphenylene sulfide (PPS), polyether sulfone (PES) and polyether-ether-ketone (PEEK) etc..
The thickness of substrate is not particularly limited.The thickness of substrate is preferably 20 μm or more and 50mm or less, more preferably 60 μ M or more and 20mm or less.By make substrate with a thickness of above range, in the case where substrate is resin film, be bonded laminated body Good stickup is shown with enough flexibilities, therefore to workpiece.As workpiece, for example, semiconductor element, as more Specific example is semiconductor chip etc..In the case where substrate is rigid support body, the thickness of rigid support body be can be considered Mechanical strength and operability etc. and be suitably determined.The thickness of rigid support body is, for example, 100 μm or more and 50mm or less.
(adhesive layer)
The adhesive layer of the bonding laminated body of present embodiment, which is preferably comprised from outside, receives energy and cured curability Adhesive composite.As the energy being externally supplied, can enumerate for example: ultraviolet light, electron beam and heat etc..Adhesive layer is excellent Select containing in ultraviolet hardening bonding agent and heat curable adhesive at least any one.In the substrate tool of bonding laminated body In the case where having heat resistance, residual stress is generated when being able to suppress heat cure, therefore, adhesive layer preferably contains thermohardening type The Thermocurable adhesive layer of bonding agent.
Adhesive layer is for example containing first bonding agents composition.First bonding agents composition contains binder polymer ingredient (A) and curability composition (B).
(A) binder polymer ingredient
In order to assign enough cementabilities and film forming (piece formative) to adhesive layer, can be used binder polymer at Divide (A).As binder polymer ingredient (A), conventionally known polymer can be used, acrylic polymer specifically can be used Close object, polyester resin, carbamate resins, propenoic methyl carbamate resin, organic siliconresin and rubber polymer etc..
The weight average molecular weight (Mw) of binder polymer ingredient (A) is preferably 10,000 or more and 2,000,000 or less, is more preferably 100000 or more and 1,200,000 or less.When the weight average molecular weight of binder polymer ingredient (A) is too low, adhesive layer and bonding sheet Bonding force increases, and the transfer that adhesive layer occurs sometimes is bad, when the weight average molecular weight of binder polymer ingredient (A) is excessively high, The cementability of adhesive layer reduces, and can not be transferred to chip etc. sometimes or protective film is removed from chip etc. is upper after transfer.
In the present specification, weight average molecular weight (Mw) is by gel permeation chromatography (Gel Permeation Chromatography；GPC) the value for being scaled standard polystyren of method measurement.
As binder polymer ingredient (A), acrylic polymer is preferably used.The glass of acrylic polymer Changing transition temperature (Tg) is preferably -60 DEG C or more and 50 DEG C or less, more preferably -50 DEG C or more and 40 DEG C hereinafter, further excellent It is selected as -40 DEG C or more and 30 DEG C of ranges below.When the glass transition temperature of acrylic polymer is too low, adhesive layer with The peeling force of bonding sheet increases, and the transfer that adhesive layer occurs sometimes is bad, the glass transition temperature of acrylic polymer When excessively high, the cementability of adhesive layer is reduced, can not be transferred to sometimes chip etc. or after transfer protective film from chip etc. Removing.
As the monomer for constituting above-mentioned acrylic polymer, (methyl) acrylate monomer or its derivative can be enumerated Object.For example, the carbon atom number of alkyl is 1 or more and 18 (methyl) alkyl acrylates below, can specifically enumerate: (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) butyl acrylate and (first Base) 2-EHA etc..Furthermore it is possible to enumerate (methyl) acrylate with cyclic skeleton, can specifically enumerate: (methyl) cyclohexyl acrylate, (methyl) benzyl acrylate, (methyl) isobornyl acrylate, two ring penta of (methyl) acrylic acid Ester, (methyl) acrylic acid dicyclopentenyl ester, (methyl) acrylic acid dicyclopentenyl oxygroup ethyl ester and acid imide (methyl) acrylic acid Ester etc..In addition, can be enumerated as the monomer with functional group: (methyl) dihydroxypropyl methyl esters, (methyl) with hydroxyl Acrylic acid 2- hydroxy methacrylate and (methyl) acrylic acid 2- hydroxy propyl ester etc..In addition, as above-mentioned acrylic polymer is constituted Monomer, (methyl) glycidyl acrylate etc. with epoxy group can be enumerated.As acrylic polymer, contain tool There are the acrylic polymer of the monomer of hydroxyl and the compatibility of the curability composition (B) described below good, therefore preferably.Separately Outside, above-mentioned acrylic polymer can also be copolymerized selected from acrylic acid, methacrylic acid, itaconic acid, vinyl acetate, propylene At least one of nitrile and styrene monomer.
In addition, can cooperate as binder polymer ingredient (A) for keeping (the solidification bonding of the protective film after solidifying Oxidant layer) thermoplastic resin flexible.As such thermoplastic resin, preferable weight-average molecular weight be 1000 or more and 100,000 with Under thermoplastic resin, more preferably 3000 or more and 80,000 thermoplastic resins below.The glass transition temperature of thermoplastic resin Preferably -30 DEG C or more and 120 DEG C or less, more preferably -20 DEG C or more and 120 DEG C or less of degree.It, can be with as thermoplastic resin It enumerates: polyester resin, carbamate resins, phenoxy resin, polybutene, polybutadiene and polystyrene etc..These thermoplastics Property resin can be used alone, or mix two or more use.By making first bonding agents composition contain above-mentioned heat Plastic resin can make adhesive layer follow the transfer surface of adhesive layer as binder polymer ingredient (A), be able to suppress generation Gap etc..
(B) curability composition
Curability composition (B) can be used in Thermocurable ingredient and energy ray-curable ingredient at least any one at Point.As curability composition (B), both Thermocurable ingredient and energy ray-curable ingredient also can be used.
As Thermocurable ingredient, heat reactive resin and thermal curing agents can be used.As heat reactive resin, such as preferably Epoxy resin.
As epoxy resin, conventionally known epoxy resin can be used.As epoxy resin, can specifically enumerate: more Function based epoxy resin, bisphenol A diglycidyl ether, the hydride of bisphenol A diglycidyl ether, o-cresol novolak epoxy Resin, dicyclopentadiene-type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin and With epoxides more than 2 functions in the molecules such as phenylene matrix type epoxy resin.Epoxy resin can be used alone 1 Kind, or two or more is applied in combination.
In adhesive layer, relative to 100 mass parts of binder polymer ingredient (A), heat reactive resin preferably comprises 1 matter Measure part or more and 1000 below the mass, more than further preferably 10 mass parts and 500 below the mass, further preferably More than 20 mass parts and 200 below the mass.When the content of heat reactive resin is lower than 1 mass parts, it can not obtain sometimes enough Cementability.When the content of heat reactive resin is more than 1000 mass parts, the peeling force of adhesive layer and substrate increases, and occurs sometimes viscous The transfer for connecing oxidant layer is bad.
Thermal curing agents play a role as to heat reactive resin, particularly as the curing agent to epoxy resin.As Preferred thermal curing agents, can enumerate can be with the compound of the functional group of epoxy reaction with 2 or more in 1 molecule.Make For that can be enumerated: phenolic hydroxyl group, alcoholic extract hydroxyl group, amino, carboxyl and anhydride group etc. with the functional group of epoxy reaction.At these In functional group, be preferably selected from least one of phenolic hydroxyl group, amino and anhydride group etc. group, more preferably selected from phenolic hydroxyl group and At least one of amino group.
It as the specific example of phenols curing agent, can enumerate: multifunctional class phenolic resin, bis-phenol, phenolic varnish type phenol Urea formaldehyde, bicyclopentadiene system phenolic resin, XYLOK type phenolic resin and aralkyl phenolic resin.As amine curing agent Specific example, DICY (dicyandiamide) can be enumerated.These thermal curing agents can be used alone, or mixes two or more and make With.
Relative to 100 mass parts of heat reactive resin, the content of thermal curing agents is preferably 0.1 mass parts or more and 500 mass Part or less, more preferably more than 1 mass parts and 200 below the mass.When the contents of thermal curing agents is few, solidification is insufficient and sometimes without Method obtains cementability.In addition, the hydroscopicity of adhesive layer increases when the content excess of thermal curing agents, fill semiconductor sometimes The reliability set reduces.
When adhesive layer contains Thermocurable ingredient as curability composition (B), adhesive layer has Thermocurable.? In this case, can be solidified by caking oxidant layer.For the bonding laminated body of present embodiment, in substrate In the case where with heat resistance, in adhesive layer heat cure, it is not easy to generate residual stress in the substrate and unfavorable condition occurs.
As energy ray-curable ingredient, can be used containing energy line polymerizable group and by ultraviolet light or electronics The low molecular compound (energy line polymerizable compound) of polymerizing curable occurs when beam Isoenergetical line irradiates.As such energy Line curability composition can specifically be enumerated: trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythrite Tetraacrylate, dipentaerythritol monohydroxypentaacryande, dipentaerythritol hexaacrylate or 1,4- butanediol dipropyl Olefin(e) acid ester, 1,6 hexanediol diacrylate, polyethyleneglycol diacrylate, oligoester acrylate, carbamate propylene The esters of acrylic acid chemical combination such as acid esters quasi-oligomer, epoxy modification acrylate, polyether acrylate and itaconic acid oligomer Object.
Energy line polymerizable compound at least has 1 polymeric double bond in the molecule.
The weight average molecular weight of energy line polymerizable compound is usually 100 or more and 30000 hereinafter, preferably 300 or more And 10000 or less.
Relative to 100 mass parts of binder polymer ingredient (A), the use level of energy line polymerizable compound is preferably comprised More than 1 mass parts and 1500 below the mass, more than further preferably 10 mass parts and 500 below the mass, further preferably Containing more than 20 mass parts and 200 below the mass.
In addition, energy line polymerizable group and binder polymer ingredient can be used as energy ray-curable ingredient (A) energy-line solidifying type polymer made of main chain or side chain is bonded.Such energy-line solidifying type polymer has both conduct The function of binder polymer ingredient (A) and function as curability composition (B).
The main framing of energy-line solidifying type polymer is not particularly limited.The main framing of energy-line solidifying type polymer is preferred For the general acrylic polymer as binder polymer ingredient (A).In addition, the main bone of energy-line solidifying type polymer Frame is preferably also polyester or polyethers etc..Since the control of synthesis transitivity is easy, more preferably made with acrylic polymer For the main framing of energy-line solidifying type polymer.
The energy line polymerizable group of the main chain or side chain that are bonded to energy-line solidifying type polymer includes for example, energy The group of line polymerism carbon-to-carbon double bond.Energy line polymerizable group can specifically enumerate (methyl) acryloyl group etc..Energy line is poly- Conjunction property base can be bonded to energy-line solidifying type polymer by alkylidene, alkylene oxide group or poly- alkylene oxide group.
Be bonded with the energy-line solidifying type polymer of energy line polymerizable group weight average molecular weight (Mw) be preferably 10,000 with It is upper and 2,000,000 or less, more preferably 100,000 or more and 1,500,000 or less.
The glass transition temperature (Tg) of energy-line solidifying type polymer is preferably -60 DEG C or more and 50 DEG C hereinafter, more excellent - 50 DEG C or more and 40 DEG C are selected as hereinafter, further preferably -40 DEG C or more and 30 DEG C or less.
Energy-line solidifying type polymer can for example make the acrylic polymer containing functional group and contain polymerism base The compound reaction of group obtains.Contain functional group possessed by the acrylic polymer of functional group as this, can enumerate Such as: hydroxyl, carboxyl, amino, substituted-amino and epoxy group etc..This contains the compound of polymerizable group in every 1 molecule With 1 or more and 5 it is below can be with above-mentioned functional group reacts possessed by acrylic polymer substitution Base and energy line polymerism carbon-to-carbon double bond.As what is reacted with above-mentioned functional group possessed by acrylic polymer Substituent group can be enumerated: isocyanate group, glycidyl and carboxyl etc..
It as the compound containing polymerizable group, can enumerate: (methyl) acryloyloxyethyl isocyanate, different Acrylic-bis (alpha, alpha-dimethylbenzyl) based isocyanate, (methyl) acryloyl isocyanates, allyl isocyanate, (methyl) acrylic acid Ethylene oxidic ester and (methyl) acrylic acid etc..
Acrylic polymer is preferably by having in hydroxyl, carboxyl, amino, substituted-amino and epoxy group etc. at least A kind of (methyl) acrylic monomer of functional group or derivatives thereof, with other (methyl) the acrylate lists that can be copolymerized with it The copolymer that body or derivatives thereof is formed.
As with functional groups such as hydroxyl, carboxyl, amino, substituted-amino, epoxy groups (methyl) acrylic monomer or Its derivative can be enumerated for example: (methyl) acrylic acid 2- hydroxy methacrylate and (methyl) acrylic acid 2- hydroxyl third with hydroxyl Ester, the acrylic acid with carboxyl, methacrylic acid and itaconic acid and glycidyl methacrylate with epoxy group and Glycidyl acrylate etc..
As other (methyl) acrylate monomers that can be copolymerized with above-mentioned (methyl) acrylic monomer or its derivative Object can specifically be enumerated it can be cited for example that atomic number of alkyl carbon is 1 or more and 18 (methyl) alkyl acrylates below: (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) butyl acrylate and (first Base) 2-EHA etc..
As other (methyl) acrylate monomers that can be copolymerized with above-mentioned (methyl) acrylic monomer or its derivative Object, it can be cited for example that (methyl) acrylate with cyclic skeleton, can specifically enumerate: (methyl) cyclohexyl acrylate, (methyl) benzyl acrylate, isobornyl acrylate, dicyclopentanyl acrylate, acrylic acid dicyclopentenyl ester, two ring penta of acrylic acid Alkenyloxy group ethyl ester and acid imide acrylate etc..In addition, above-mentioned acrylic polymer for example can be selected from vinyl acetate At least any one copolymerization in ester, acrylonitrile and styrene.
Using energy-line solidifying type polymer, above-mentioned energy line polymerism chemical combination can be applied in combination Object, or binder polymer ingredient (A) is applied in combination.For this three in the adhesive layer of present embodiment, (adhesive is poly- Polymer component (A), energy line polymerizable compound and energy-line solidifying type polymer) use level relationship for, relative to 100 mass parts of gross mass of energy-line solidifying type polymer and binder polymer ingredient (A), energy line polymerizable compound are excellent Choosing containing more than 1 mass parts and 1500 below the mass, more than further preferably 10 mass parts and 500 below the mass, into one Step preferably comprises 20 mass parts or more and 200 below the mass.
By assigning energy ray-curable to adhesive layer, can be easy and adhesive layer be solidified in short time, is improved Production efficiency with the chip for solidifying adhesive layer.Solidifying adhesive layer can also be used as guarantor for protecting semiconductor element Cuticula and play a role.Currently, the protective film of the semiconductor elements such as chip is usually formed by heat reactive resins such as epoxy resin, But the solidification temperature of heat reactive resin is more than 200 DEG C, and curing time needs 2 hours or so, harms the raising of production efficiency.But It is that the adhesive layer of energy ray-curable is irradiated by energy line to be solidified in a short time, therefore being capable of easy landform At protective film, production efficiency is helped to improve.
Other ingredients
Adhesive layer can also contain conduct other than above-mentioned binder polymer ingredient (A) and curability composition (B) The following compositions of other ingredients.As other ingredients, adhesive layer can containing selected from colorant (C), curing accelerator (D), At least one in coupling agent (E), inorganic filling material (F), Photoepolymerizationinitiater initiater (G), crosslinking agent (H) and universal additive (I) Kind or more.
(C) colorant
Adhesive layer preferably comprises colorant (C).By cooperating colorant in adhesive layer, pacify by semiconductor device When being attached in machine, the infrared ray etc. of peripheral devices generation can be covered, semiconductor caused by can preventing because of infrared ray etc. fills The malfunction set.In addition, printed product in solidification adhesive layer (protective film) obtained from solidifying adhesive layer can be improved The visual recognition of text whens number etc..That is, leading to for the semiconductor device or semiconductor chip that form protective film Often product number etc. is printed by laser labelling method (for example, utilizing the method that laser ablation protects film surface to be printed) In the surface of protective film.By making protective film contain colorant (C), can obtain protective film utilizes the part after laser ablation With the enough poor contrasts for the part not eliminated, visual recognition is improved.As colorant (C), can be used organic pigment, At least any one in inorganic pigment, organic dyestuff and inorganic dyestuff.As colorant (C), involve infrared shield from electromagnetism From the viewpoint of property, preferably black pigment.As black pigment, it is not particularly limited.As black pigment, example can be enumerated Such as: carbon black, iron oxide, manganese dioxide, nigrosine and active carbon.It is examined from the viewpoint for the reliability for improving semiconductor device Consider, as black pigment, particularly preferably carbon black.Colorant (C) can be used alone, and can also combine two or more makes With.In the present embodiment, at least either and the transmittance of ultraviolet light reduce in making visible light and infrared ray Colorant and make ultraviolet light transmittance reduce in the case where, can particularly good play the high solidification of adhesive layer.As Make the colorant that at least either and the transmittance of ultraviolet light reduce in visible light and infrared ray, in addition to above-mentioned black pigment In addition, as long as at least either and the wave-length coverage of ultraviolet light all have absorbability or reflectivity in visible light and infrared ray Colorant, be not particularly limited.
Relative to 100 mass parts of all solids ingredient for constituting adhesive layer, the use level of colorant (C) is preferably 0.1 More than mass parts and 35 below the mass, more than more preferably 0.5 mass parts and 25 below the mass, further preferably 1 matter Measure part or more and 15 below the mass.
(D) curing accelerator
Curing accelerator (D) can be used for adjusting the curing rate of adhesive layer.The combination especially in curability composition (B) , it is preferable to use curing accelerator (D) in the case where using epoxy resin and thermal curing agents.
Curing accelerator (D) is preferably selected from least one in tertiary amines, imidazoles, organic phosphine and tetraphenyl boron salt Kind.
As tertiary amines, can enumerate for example: triethylenediamine, benzyl dimethylamine, triethanolamine, dimethylaminoethyl Alcohol and three (dimethylaminomethyl) phenol etc..
It as imidazoles, can enumerate for example: 2-methylimidazole, 2- phenylimidazole, 2- phenyl -4-methylimidazole, 2- benzene Base -4,5- bishydroxymethyl imidazoles and 2- phenyl -4- methyl -5- hydroxymethylimidazole etc..
As organic phosphine, can enumerate for example: tributylphosphine, diphenylphosphine and triphenylphosphine etc..
As tetraphenyl boron salt, can enumerate for example: tetraphenylTetraphenyl borate salts and triphenylphosphine tetraphenylboronic acid Salt etc..
Curing accelerator (D) can be used alone, or mix two or more use.
Relative to 100 mass parts of curability composition (B), preferably with more than 0.01 mass parts and 10 amount below the mass contains There is curing accelerator (D), more preferably with more than 0.1 mass parts and 1 amount below the mass contains curing accelerator (D).Pass through Contain curing accelerator (D) with the amount of above range, under conditions of high-temperature and high humility, adhesive layer also has There are excellent adhesion properties.In addition, contained curing accelerator (D) by the amount with above range, adhesive layer if exposed to It also can be realized high reliability when harsh Reflow Soldering condition.When the content of curing accelerator (D) is few, exist solidification it is insufficient and The hidden danger of enough adhesion properties can not be obtained, when the content with highly polar curing accelerator is excessive, due in high-temperature And curing accelerator is segregated to the movement of the bonding interface side of adhesive layer under conditions of high humility, therefore there are semiconductor devices Reliability reduce hidden danger.
(E) coupling agent
Coupling agent (E) can be used for improving adhesive layer to the cementability of semiconductor element, adaptation and solidification bonding agent At least any one characteristic in the coherency of layer (protective film).In addition, can not damage will be bonded by using coupling agent (E) Oxidant layer solidifies the heat resistance of adhesive layer (protective film) and improves its water resistance obtained from solidifying.
As coupling agent (E), preferable use has can be with binder polymer ingredient (A) or curability composition (B) The compound for the group that the functional group Deng possessed by reacts.As coupling agent (E), preferably silane coupling agent.As this The coupling agent of sample can be enumerated: γ-glycidoxypropyltrime,hoxysilane, γ-glycidoxypropyl diethoxy Base silane, β-(3,4- epoxycyclohexyl) ethyl trimethoxy silane, γ-(methacryloxypropyl) trimethoxy silicon Alkane, gamma-amino propyl trimethoxy silicane, N- β-(amino-ethyl)-gamma-amino propyl trimethoxy silicane, N- β-(amino second Base)-gamma-amino hydroxypropyl methyl diethoxy silane, N- phenyl-gamma-amino propyl trimethoxy silicane, γ-three second of urea propyl Oxysilane, γ-mercaptopropyl trimethoxysilane, γ-mercapto hydroxypropyl methyl dimethoxysilane, bis- (3- triethoxy-silicanes Base propyl) tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyl three Acetoxylsilane and imidizole silane etc..Coupling agent (E) can be used alone, or mix two or more use.
Relative to binder polymer ingredient (A) and 100 mass parts of total of curability composition (B), usually with 0.1 mass Part or more and 20 ratio below the mass contain coupling agent (E), preferably with more than 0.2 mass parts and 10 ratio below the mass Example is containing coupling agent (E), more preferably with more than 0.3 mass parts and 5 ratio below the mass contains coupling agent (E).Coupling agent (E) when content is lower than 0.1 mass parts, it is possible to above-mentioned effect can not be obtained.The content of coupling agent (E) is more than 20 mass parts When, it is possible to become the reason of being vented.
(F) inorganic filling material
Solidification adhesive layer (protection by cooperating inorganic filling material (F) in adhesive layer, after adjustable solidification Film) thermal expansion coefficient.By optimizing thermal expansion of the solidification adhesive layer (protective film) after solidifying relative to semiconductor chip The reliability of semiconductor device can be improved in coefficient.In addition, also can reduce the solidification adhesive layer (protective film) after solidifying Hydroscopicity.
It as preferred inorganic filling material, can enumerate: silica, aluminium oxide, talcum, calcium carbonate, titanium oxide, oxygen Change the powder of iron, silicon carbide and boron nitride etc., by pearl made of these powder spheroidizations, unijunction crystal fiber and glass fibre etc.. In these inorganic filling materials, preferably silica filler and alumina packing, more preferable silica filler.Above-mentioned nothing Machine packing material (F) can be used alone or mix two or more use.Relative to all solids ingredient for constituting adhesive layer 100 mass parts, usually can be more than 1 mass parts and 80 range below the mass adjusts the content of inorganic filling material (F).
(G) Photoepolymerizationinitiater initiater
In the case where adhesive layer contains energy ray-curable ingredient as above-mentioned curability composition (B), make at it Used time irradiates ultraviolet light Isoenergetical line and solidifies energy line curability composition.At this point, by the combination for constituting adhesive layer Contain Photoepolymerizationinitiater initiater (G) in object, the polymerizing curable time can be shortened, and then light exposure can be reduced.
It as such Photoepolymerizationinitiater initiater (G), can specifically enumerate: benzophenone, acetophenone, benzoin, benzoin Methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid first Ester, benzil dimethyl ketal, 2,4- diethyl thioxanthone, Alpha-hydroxy cyclohexyl-phenyl ketone, benzyldiphenyl thioether, tetramethyl autumn Blue nurse list sulfide, azodiisobutyronitrile, benzil, bibenzyl, diacetyl, 1,2- diphenyl methane, 2- hydroxy-2-methyl -1- [4- (1- methyl ethylene) phenyl] acetone, 2,4,6- trimethyl benzoyl diphenyl base phosphine oxide and β-chloroanthraquinone etc..Light Polymerization initiator (G) can be used alone, or 2 types of combination are used above.
Relative to 100 mass parts of energy ray-curable ingredient, the mixing ratio of Photoepolymerizationinitiater initiater (G) is preferably 0.1 matter Measure part or more and 10 below the mass, more than more preferably 1 mass parts and 5 below the mass.The cooperation of Photoepolymerizationinitiater initiater (G) It is insufficient there are photopolymerization and the hidden danger of satisfied transferability can not be obtained when ratio is lower than 0.1 mass parts.Photoepolymerizationinitiater initiater (G) when mixing ratio is more than 10 mass parts, the residue for being helpless to photopolymerization is generated, there are the curability of adhesive layer deficiencies Hidden danger.
(H) crosslinking agent
In order to adjust the initial bonding force and cohesiveness of adhesive layer, can be added in adhesive layer crosslinking agent (H).Make For crosslinking agent (H), organic polyisocyanate compound and organic more group with imine moiety etc. can be enumerated.
As above-mentioned organic polyisocyanate compound, can enumerate: aromatic polyisocyanate compound, aliphatic are more Isocyanate compound, alicyclic polyisocyanates compound and these organic polyisocyanate compounds trimer and Terminal isocyanate carbamate obtained from reacting these organic polyisocyanate compounds with polyol compound is pre- Polymers etc..
As organic polyisocyanate compound, can enumerate for example: 2,4- toluene di-isocyanate(TDI)s, 2,6- toluene two are different Cyanate, 1,3- xylene diisocyanate, 1,4- xylene diisocyanate, diphenyl methane -4,4 '-diisocyanate, Diphenyl methane -2,4 '-diisocyanate, 3- Dimethyl diphenylmethane diisocyanate, hexamethylene diisocyanate, different Buddhist That ketone diisocyanate, dicyclohexyl methyl hydride -4,4 '-diisocyanate, dicyclohexyl methyl hydride -2,4 '-diisocyanate, three hydroxyls Compound and lysine diisocyanate etc. obtained from methylpropane addition toluene di-isocyanate(TDI).
As above-mentioned organic more group with imine moiety, can enumerate: N, N '-diphenyl methane -4,4 '-bis- (1- aziridine first Amide) ,-three-β of trimethylolpropane-'-aziridino propionic ester ,-three-β of tetramethylol methane-'-aziridino propionic ester and N, N '-Toluene-2,4-diisocyanate, bis- (1- aziridine formamide) triethylenemelanins of 4- etc..
Relative to 100 mass parts of total amount of binder polymer ingredient (A) and energy-line solidifying type polymer, usually with More than 0.01 mass parts and 20 ratio below the mass is using crosslinking agent (H), preferably with more than 0.1 mass parts and 10 mass parts Ratio below using crosslinking agent (H), more preferably with it is more than 0.5 mass parts and 5 ratio below the mass use crosslinking agent (H)。
(I) universal additive
Than that described above, it can according to need cooperation universal additive (I) in adhesive layer.It, can as universal additive To enumerate: levelling agent, plasticizer, antistatic agent, antioxidant, ion trap agent, getter and chain-transferring agent etc..
There is cementability and curability by the adhesive layer that above-mentioned such each ingredient is formed, can lead in the uncured state It crosses pressing workpiece (semiconductor wafer or chip etc.) and is easy to carry out bonding.Then, by solidification, anti-impact can finally be obtained The good solidification adhesive layer (protective film) of hitting property, adhesive strength is also excellent, also can under harsh high-temperature and high humidity Enough keep enough defencive functions.It should be noted that adhesive layer can be single layer structure, as long as in addition, including 1 layer or more Layer containing mentioned component, is also possible to multilayered structure.
The thickness of adhesive layer is not particularly limited.The thickness of adhesive layer is preferably 3 μm or more and 300 μm or less, more Preferably 5 μm or more and 250 μm or less, further preferably 7 μm or more and 200 μm or less.
As indicate adhesive layer visible light and infrared ray in the radioparent scale of at least either and ultraviolet light, More than wavelength 300nm and 1200nm maximum transmission rate below be preferably 20% or less, more preferably 0% or more and 15% with Under, more preferably higher than 0% and 10% or less, further preferably 0.001% or more and 8% or less.By making wavelength 300nm Above and the maximum transmission rate of 1200nm adhesive layer below be above range, adhesive layer contain energy ray-curable at In the case where dividing (especially ultra-violet solidified ingredient), even if adhesive layer is coloured, curability is also excellent.In addition, it is seen that The transmittance of at least either reduces in optical wavelength range and infrared wavelength range, and can obtain prevents semiconductor device because infrared Malfunction caused by line, the effect for improving the visual recognition printed.More than wavelength 300nm and 1200nm bonding agent below The maximum transmission rate of layer can be adjusted by above-mentioned colorant (C).It should be noted that for the max transmissive of adhesive layer For rate, the adhesive layer after being solidified using UV-vis spectrum detection device (Shimadzu Scisakusho Ltd's manufacture) measurement is (thick 25 μm of degree) peak (maximum transmission rate) in 300nm or more and 1200nm total light transmittance below, as transmissivity.
(manufacturing method of semiconductor device)
Fig. 1 (Figure 1A~Fig. 1 E) and Fig. 2 (Fig. 2A~Fig. 2 D) is the manufacturer for showing the semiconductor device of present embodiment The figure of one example of method.
In the manufacturing method of the semiconductor device of present embodiment, the bonding for having substrate 11 and adhesive layer 12 is used Laminated body 1.In the bonding laminated body 1 of present embodiment, adhesive layer 12 is directly laminated in substrate 11.
Adhesive layer 12, which is preferably comprised from outside, receives energy and cured curing type bonding agent.As what is be externally supplied Energy can be enumerated for example: ultraviolet light, electron beam and heat etc..Adhesive layer 12 preferably comprise ultraviolet hardening bonding agent and At least any one in heat curable adhesive.In the present embodiment, as the bonding agent contained in adhesive layer 12, such as Preferably above-mentioned first bonding agents composition.
Semiconductor chip adhering processes
Figure 1A and Figure 1B shows the work of the adhesive layer 12 for making semiconductor chip CP be pasted on bonding laminated body 1 The diagrammatic cross-section that sequence (sometimes referred to as semiconductor chip adhering processes) is illustrated.It should be noted that showing 1 in Figure 1A A semiconductor chip CP, but in the present embodiment, so that multiple semiconductor chip CP is pasted on bonding agent as illustrated in figure ib Layer 12.It when pasting semiconductor chip CP, can paste one by one, multiple semiconductor chip CP can also be pasted simultaneously.
Semiconductor chip CP used in present embodiment has circuit face W1 and conduct provided with connection terminal W3 With the chip back W2 at the element back side of circuit face W1 opposite side.In the present embodiment, chip back W2 is made to be pasted on bonding Oxidant layer 12.
Reinforcing frame adhering processes
In the present embodiment, preferably further have and reinforcing frame 2 is pasted on the process of bonding laminated body 1 (sometimes referred to as For reinforcing frame adhering processes) (A and Figure 1B referring to Fig.1).By the way that reinforcing frame 2 is pasted on bonding laminated body 1, semiconductor can be improved The operability etc. of the bonding laminated body 1 for being pasted with semiconductor chip CP in device producing method technique.
The shape of reinforcing frame 2 is not particularly limited.The multiple semiconductors that will for example be pasted on bonding laminated body 1 can be enumerated The periphery for the whole region that chip CP is pasted surrounds reinforcing frame that is such, being formed as frame-shaped.Be formed as furthermore it is possible to enumerate Surround the reinforcing frame of the clathrate of one or more semiconductor chips CP.Be formed as to be pasted on bonding stacking furthermore it is possible to enumerate The region division that multiple semiconductor chip CP of body 1 are pasted is the reinforcing frame of the crosswise of multiple regions.
The process for pasting reinforcing frame 2 can be implemented before the process for making semiconductor chip CP be pasted on bonding laminated body 1, It can also implement after making semiconductor chip CP be pasted on the process for being bonded laminated body 1.
Adhesive layer curing process
Fig. 1 C, which is shown, solidifies the process of adhesive layer 12A (sometimes referred to as being solidified to form adhesive layer 12 Adhesive layer curing process) diagrammatic cross-section that is illustrated.By solidifying adhesive layer 12, semiconductor chip CP is stronger Ground is adhered to solidification adhesive layer 12A, is able to suppress the movement of semiconductor chip CP in subsequent resin seal process.
As the cured degree of adhesive layer, it can enumerate and be fully cured or semi-solid preparation (B-staged).
Select the cured method of adhesive layer 12 suitably according to the type of the bonding agent contained by adhesive layer 12 It selects.Bonding agent contained by adhesive layer 12 can then irradiate adhesive layer 12 ultraviolet if it is ultraviolet hardening bonding agent Line and make adhesive layer 12 solidify.The substrate 11 for being bonded laminated body 1 preferably has UV transmissive, so that the ultraviolet light of irradiation It reaches adhesive layer 12 and solidifies adhesive layer 12.
In the present embodiment, reinforcing frame 2 is pasted on adhesive layer 12, therefore is able to suppress when adhesive layer 12 solidifies The flexure and curling of bonding laminated body 1 caused by shrinking.It is therefore preferable that making adhesive layer 12 be solidified to form solidification bonding agent Reinforcing frame 2 is pasted on adhesive layer 12 in advance before the process of layer 12A.
Sealing process
Fig. 1 D is shown for solidifying the work being sealed after adhesive layer 12A to multiple semiconductor chip CP in formation The diagrammatic cross-section that sequence (sometimes referred to as sealing process) is illustrated.
In the present embodiment, sealing is formed by coating the side circuit face W1 of semiconductor chip CP with containment member 30 Body 3.Containment member 30 is also filled between multiple semiconductor chip CP.In the present embodiment, since reinforcing frame 2 is also enclosed The inside of seal 3, therefore the rigidity of seal 3 improves, and can inhibit the warpage of the semiconductor packages generated after resin seal.
It is not particularly limited using the method that containment member 30 seals multiple semiconductor chip CP.
For example, can be with the following method: multiple semiconductor chip CP of the state supported by bonding laminated body 1 are placed In mold, into mold, injection has the sealed resin material of mobility, and sealed resin material is made to be heating and curing, and forms sealing Resin layer.Alternatively, it is also possible to the following method: placing the sealing resin of sheet, it is made to cover multiple semiconductor chip CP's Circuit face W1, makes sealing resin be heating and curing, and forms sealing resin layer.Furthermore it is also possible to the following method: placing sheet Sealing resin makes it cover semiconductor chip CP and reinforcing frame 2, sealing resin is made to be heating and curing, and forms sealing resin layer.Make When with the sealing resin of sheet, preferably pass through vacuum layer platen press sealing semiconductor chips CP and reinforcing frame 2.Pass through the vacuum lamination Method can prevent from generating gap between semiconductor chip CP and reinforcing frame 2.The temperature being heating and curing using vacuum layer platen press Spending condition and range is, for example, 80 DEG C or more and 120 DEG C or less.
As the material of containment member 30, it can be cited for example that epoxy resin etc..Epoxy resin as containment member 30 In such as can be containing phenolic resin, elastomer, inorganic filling material and curing accelerator.
It can implement to make the further cured process of containment member 30 (sometimes referred to as between sealing process and subsequent processing Additional curing process).In this process, heating sealing resin layer can be enumerated and promote cured method as an example.It needs It is noted that additional curing process can not also be implemented and keep containment member 30 sufficiently solid by the heating in sealing process Change.
Substrate stripping process
Fig. 1 E shows the work for the substrate 11 of removing bonding laminated body 1 after sealing multiple semiconductor chip CP The diagrammatic cross-section that sequence (sometimes referred to as substrate stripping process) is illustrated.
In the present embodiment, in the state of will solidify adhesive layer 12A and remain on seal 3 by substrate 11 from sealing It is removed on body 3.
Connection terminal exposes process
The process that Fig. 2A shows the surface for making the connection terminal W3 of semiconductor chip CP expose seal 3 (has When referred to as connection terminal expose process) diagrammatic cross-section that is illustrated.
In the present embodiment, the close of the seal 3 of the circuit face W1 and connection terminal W3 of semiconductor chip CP will be coated Part or all of removing for sealing resin layer, exposes connection terminal W3.Expose the connection terminal W3 of semiconductor chip CP Method is not particularly limited.As the method for exposing the connection terminal W3 of semiconductor chip CP, can enumerate for example: grinding is close It seals resin layer and makes the method for connection terminal W3 exposing, connection terminal is made by the methods of laser irradiation removing sealing resin layer The method and the method etc. that sealing resin layer exposes connection terminal W3 is removed by etching method that W3 exposes.As long as can It is electrically connected with the wiring layer again described below, then the whole of connection terminal W3 can be made to expose, can also make connection terminal W3's A part is exposed.
Wiring layer formation process again
Fig. 2 B shows the process for the wiring layer again 4 being electrically connected for formation with semiconductor chip CP (sometimes referred to as again Wiring layer formation process) diagrammatic cross-section that is illustrated.
In the present embodiment, it is electrically connected wiring layer 4 with the connection terminal W3 exposed on 3 surface of seal. In the present embodiment, wiring layer 4 again are formed on circuit face W1 and on the face 3S of seal 3.The method for forming again wiring layer 4 Conventionally known method can be used.
Wiring layer 4 has the external electrode pads 41 for connecting external terminal electrode again.In the present embodiment, more A position forms external electrode pads 41.In the present embodiment, it yet forms and is fanned out to (Fan-Out) semiconductor chip CP's External electrode pads 41 other than region.
External terminal electrode connects process
Fig. 2 C shows process (the sometimes referred to as outer end for being electrically connected external terminal electrode 5 with wiring layer 4 again Sub-electrode connects process) diagrammatic cross-section that is illustrated.
In the present embodiment, the external terminal electrodes such as solder ball 5 are placed in external electrode pads 41, pass through welding etc. It is electrically connected external terminal electrode 5 with external electrode pads 41.The material of solder ball is not particularly limited, can enumerate for example containing Kupper solder and lead-free solder etc..
Singualtion operation
Fig. 2 D shows that the process of 3 singualtion of seal for that will be connected with external terminal electrode 5 is (sometimes referred to as single Piece chemical industry sequence) diagrammatic cross-section that is illustrated.
The method of 3 singualtion of seal is not particularly limited.It as the method for singualtion, can enumerate for example: use The disconnecting devices such as slicer (dicing saw) carry out method and laser irradiation of singualtion etc..By 3 singualtion of seal Process seal 3 can be pasted on the bonding sheets such as cutting sheet to implement.
In the present embodiment, manufacturing 3 singualtion of seal in a manner of comprising multiple semiconductor chip CP Semiconductor packages 100 comprising multiple semiconductor chip CP.In semiconductor packages 100, solidification adhesive layer 12A is still bonded In the chip back W2 of semiconductor chip CP.That is, the adhesive layer 12 of bonding laminated body 1 is stripped after resin seal It is fixed temporarily purposes, but is adhered to semiconductor chip CP securely in the form of solidifying adhesive layer 12A, as semiconductor package It fills 100 a part and contains.
In the present embodiment, due to make external terminal electrode 5 and be fanned out to the region of (Fan-Out) semiconductor chip CP with Outer external electrode pads 41 connect, therefore semiconductor packages 100 may be used as the wafer-level packaging (FO-WLP) of fan-out-type.
Installation procedure
The manufacturing method of the semiconductor device of present embodiment preferably includes semiconductor packages 100 being installed on printed wiring The process (sometimes referred to as installation procedure) of substrate etc..
The effect of embodiment
The manufacturing method of semiconductor device according to the present embodiment can inhibit the pressure when resin seal due to make half The unfavorable condition that conductor chip CP deviates from designated position.
Compared with being used as record in document 1 by adhesive tape and being fixed temporarily the method for purposes, in present embodiment Manufacturing method in, used bonding laminated body, and implement semiconductor chip CP after further solidifying adhesive layer 12 Resin seal.Therefore, bonding laminated body according to the present embodiment can be solid compared with the adhesive tape of existing method Change and more firmly keep semiconductor chip CP on adhesive layer 12A, so as to inhibit the unfavorable condition deviateed from designated position (chip offset).
In addition, compared with using the method for adhesive tape as recording in document 1, in the manufacturing method of present embodiment In, so that adhesive layer 12 is solidified to form solidification adhesive layer 12A, therefore, even if will unlike the method recorded in document 1 Semiconductor chip CP is fixed on substrate, and the behaviour of semiconductor chip CP can be also prevented using the rigidity for solidifying adhesive layer 12A The property made reduction.Therefore, component and process used in the manufacturing method of semiconductor device can be reduced, can simplify manufacture work Sequence.
In addition, since solidification adhesive layer 12A has rigidity, the rigidity of seal 3 can be improved, so as to press down The warping of semiconductor package generated after resin seal processed.
Due to comprising solidifying a part of adhesive layer 12A as semiconductor packages 100, with can laser beat In the case that the material of print forms solidification adhesive layer 12A, the identification informations such as production number can be printed on into semiconductor package Fill 100 solidification adhesive layer 12A.
(the 2nd embodiment)
The manufacturing method of the semiconductor device of present embodiment is with the following process: multiple semiconductor elements being pasted on viscous The process for connecing the adhesive layer of laminated body；Above-mentioned adhesive layer is set to be solidified to form the process for solidifying adhesive layer；On multiple The process stated semiconductor element encapsulation and form the seal with sealing resin layer；Above-mentioned substrate is shelled from above-mentioned seal From the process without removing above-mentioned solidification adhesive layer from above-mentioned seal；What formation was electrically connected with above-mentioned semiconductor element The process of wiring layer again；The process for being electrically connected external terminal electrode with above-mentioned wiring layer again, wherein above-mentioned partly led by multiple When volume elements part is pasted on above-mentioned bonding laminated body, the circuit face with connection terminal of above-mentioned semiconductor element is glued towards above-mentioned It connects oxidant layer to be pasted, after removing above-mentioned substrate from above-mentioned seal, the above-mentioned solidification for coating foregoing circuit face is glued Part or all of removing for connecing oxidant layer, exposes above-mentioned connection terminal, makes the above-mentioned connecting pin of above-mentioned wiring layer again and exposing Son electrical connection.
It is preferred that reinforcing frame is pasted before the process for making above-mentioned adhesive layer be solidified to form above-mentioned solidification adhesive layer In above-mentioned adhesive layer.
(substrate)
The substrate of the bonding laminated body of present embodiment is also not particularly limited, it is, for example, possible to use with the 1st embodiment The identical substrate of the substrate of middle explanation.
(adhesive layer)
The adhesive layer of the bonding laminated body of present embodiment is it is also preferred that containing energy is received and cured solidification from outside Type bonding agent.Adhesive layer preferably comprise in ultraviolet hardening bonding agent and heat curable adhesive at least any one. In the case where the substrate for being bonded laminated body has heat resistance, residual stress, therefore, bonding agent are generated when being able to suppress heat cure Layer is preferably the Thermocurable adhesive layer containing heat curable adhesive.
The adhesive layer of present embodiment is for example containing second bonding agents composition.
Adhesive layer can have the adhesive ingredients of reactive double bond group to assign plate shape retentivity by adding And curability.In addition, adhesive ingredients, other than reactive double bond group, also containing the epoxy group described below therefore can It carries out addition polymerization each other to carry out by the epoxy group addition polymerization or reactive double bond group each other and forms three-dimensional network Structure, to realize the solidification of adhesive layer.As a result, being formed with the adhesive ingredients by not having reactive double bond group Adhesive layer compare, the reliability of semiconductor device can be improved.In addition, adding the surface tool described below in adhesive layer When having packing material (L) of reactive double bond group, compared with the adhesive ingredients for not having reactive double bond group, have anti- The compatibility of the adhesive ingredients of answering property double bond group and the packing material (L) is high.
As the adhesive ingredients with reactive double bond group, can enumerate component of polymer (J) and Thermocurable at Divide (K).Reactive double bond group may include at least one of component of polymer (J) and Thermocurable ingredient (K).Polymerization Object ingredient is sometimes referred to as binder polymer ingredient.
Second bonding agents composition preferably comprises component of polymer (J) and Thermocurable ingredient (K).
It should be noted that up to adhesive layer cured period, as the function in advance with workpiece temporary bond The initial bond of energy can be pressure-sensitive adhesive, be also possible to utilize the hot property for being softened and being bonded.Initial bond Usually can by adjusting adhesive ingredients each characteristic and below use level of packing material (L) for describing etc. controls.
(J) component of polymer
Component of polymer (J) is to assign plate shape retentivity to adhesive layer and add as the main purpose.
To achieve the goals above, the weight average molecular weight (Mw) of component of polymer (J) is usually 20,000 or more, is preferably 20,000 or more and 3,000,000 or less.
As component of polymer (J), can be used selected from acrylic polymer, polyester, phenoxy resin, poly- carbonic acid At least one of ester, polyethers, polyurethane, polysiloxanes and rubber polymer etc..Alternatively, it is also possible to be two or more these Component of polymer made of ingredient bonding, as component of polymer made of two or more such bonding, it can be cited for example that, Make carbamate prepolymer of the molecular end with isocyanate group and third as the acrylic polymer with hydroxyl Propenoic methyl carbamate resin etc. obtained from olefin(e) acid polyalcohol reacts.In addition, as component of polymer (J), including 2 Kind or more made of bonding including polymer, mentioned component of more than two kinds can be applied in combination.
(J1) acrylic polymer
As component of polymer (J), it is preferable to use acrylic polymer (J1).The glass of acrylic polymer (J1) Change transition temperature (Tg) to be preferably -60 DEG C or more and 50 DEG C or less, be more preferably -50 DEG C or more and 40 DEG C or less, be further excellent It is selected as -40 DEG C or more and 30 DEG C of ranges below.When the glass transition temperature of acrylic polymer (J1) is high, adhesive layer Cementability reduce, there is the hidden danger that can not be transferred to workpiece.
The weight average molecular weight (Mw) of acrylic polymer (J1) is preferably 100,000 or more and 1,500,000 or less.Third When the weight average molecular weight of olefin(e) acid quasi polymer (J1) is high, the cementability of adhesive layer is reduced, and the hidden of workpiece can not be transferred to by existing Suffer from.
Acrylic polymer (J1) is at least containing (methyl) acrylate monomer or derivatives thereof as composition acrylic acid The monomer of quasi polymer (J1).As (methyl) acrylate monomer or derivatives thereof, Japanese Unexamined Patent Publication 2016- can be enumerated The acrylic polymer that example goes out in the acrylic polymer (A1) recorded in No. 027655 bulletin.It should be noted that As the monomer for constituting acrylic polymer (J1), the monomer with carboxyl can be used.As the heat cure described below Property ingredient (K), using epoxies Thermocurable ingredient, due to the ring in carboxyl and epoxies Thermocurable ingredient Oxygroup reacts, it is therefore preferable that the dosage of the monomer with carboxyl is less.
In the case where acrylic polymer (J1) has reactive double bond group, reactive double bond group can be with addition In the unit of the continuous structure for the skeleton for forming acrylic polymer (J1), or can be with addition in end.
Acrylic polymer (J1) with reactive double bond group can for example make have the third of reactive functional groups Olefin(e) acid quasi polymer reacts with the compound containing polymerizable group and obtains, the compound containing polymerizable group There is 1 or more and 5 or less the substituent groups reacted with above-mentioned reactive functional groups and reactive double bond group in 1 molecule.
It as reactive double bond group possessed by acrylic polymer (J1), preferably enumerates: vinyl, allyl And (methyl) acryloyl group etc..
Remember in reactive functional groups possessed by acrylic polymer (J1) and Japanese Unexamined Patent Publication 2016-027655 bulletin The reactive functional groups meaning of the ingredient (A) of load is identical.Acrylic polymer with reactive functional groups can be by this The method recorded in the ingredient (A) of bulletin obtains.As the compound containing polymerizable group, with Japanese Unexamined Patent Publication 2016- The energy-line solidifying type polymer phase that example goes out in the ingredient (AD) recorded in No. 027655 bulletin is same.
In the case where adhesive layer contains crosslinking agent (N) described below, acrylic polymer (J1) preferably has Reactive functional groups.
Wherein, the manufacture with hydroxyl as the acrylic polymer (J1) of reactive functional groups is easy, and is easy to make Cross-linked structure is imported with crosslinking agent (N), therefore preferably.In addition, there is the acrylic polymer (J1) of hydroxyl and describe below Thermocurable ingredient (K) it is excellent in compatibility.
As the monomer for constituting acrylic polymer (J1), by using the monomer with reactive functional groups to third In the case that olefin(e) acid quasi polymer (J1) imports reactive functional groups, the monomer with reactive functional groups is constituting acrylic compounds Ratio in the monomer gross mass of polymer (J1) is preferably 1 mass % or more and 20 mass % or less, more preferably 3 mass % Above and 15 mass % or less.By making the knot in acrylic polymer (J1) from the monomer with reactive functional groups Structure unit is above range, and reactive functional groups can be made to react with the cross-linking functional group of crosslinking agent (N) and form three dimensional network Network structure, to improve the crosslink density of acrylic polymer (J1).As a result, the shear strength of adhesive layer is excellent.Separately Outside, since the water imbibition of adhesive layer reduces, the excellent semiconductor device of available package reliability.
(J2) non-acrylic resin
In addition, non-acrylic resin (J2) can be used as component of polymer (J).Non- acrylic resin (J2) It can be the tree in polyester, phenoxy resin, polycarbonate, polyethers, polyurethane, polysiloxanes and rubber polymer Rouge, or the resin made of two or more resin-bonded in above-mentioned resin.Non- acrylic resin (J2) can be independent Using a kind, or combine two or more use.The weight average molecular weight of non-acrylic resin (J2) be preferably 20,000 or more and 100,000 or less, 20,000 or more and 80,000 or less are more preferably.
The glass transition temperature of non-acrylic resin (J2) is preferably -30 DEG C or more and 150 DEG C or less, further excellent It is selected as -20 DEG C or more and 120 DEG C of ranges below.
In the case where non-acrylic resin (J2) and above-mentioned acrylic polymer (J1) is applied in combination, by bonding agent When layer is needed on workpiece, adhesive layer can be made to follow transfer surface, the generation in gap etc. can be further suppressed.
In the case where non-acrylic resin (J2) and above-mentioned acrylic polymer (J1) is applied in combination, non-propylene The content of acid resin (J2) is led in terms of the mass ratio (J2:J1) of non-acrylic resin (J2) and acrylic polymer (J1) It is often 1:99~60:40, the range of preferably 1:99~30:70.By making the content of non-acrylic resin (J2) model It encloses, above-mentioned effect can be obtained.
In the acrylic polymer (J1) or phenoxy resin for using side chain that there is epoxy group as component of polymer (J) In the case where, epoxy group possessed by component of polymer (J) participates in heat cure sometimes, but in the present embodiment, such poly- It closes object or resin is used as component of polymer (J) to handle, rather than heat curable component (K).
(K) Thermocurable ingredient
Thermocurable ingredient (K) is to assign Thermocurable to adhesive layer and add as the main purpose.
Thermocurable ingredient (K) contains the compound with epoxy group (hereinafter, sometimes referred to simply as " epoxide ").Make For Thermocurable ingredient (K), epoxide and thermal curing agents is preferably applied in combination.
Since Thermocurable ingredient (K) and component of polymer (J) are applied in combination, bonding agent is used to form from inhibition From the viewpoint of viscosity, raising operability of the composition for coating of layer etc., the weight average molecular weight (Mw) of Thermocurable ingredient (K) Usually 10,000 or less, preferably 100 or more and 10,000 or less.
As epoxide, including the epoxide (K1) with reactive double bond group and do not have reactivity pair The epoxide (K1 ') of key group.As thermal curing agents, including the thermal curing agents (K2) with reactive double bond group and not Thermal curing agents (K2 ') with reactive double bond group.Thermocurable ingredient (K) in the present embodiment has reactivity double In the case where key group, include the epoxide (K1) with reactive double bond group and the heat with reactive double bond group At least one of curing agent (K2) is as an essential component.
(K1) with the epoxide of reactive double bond group
In order to improve intensity and heat resistance of the adhesive layer after heat cure, the epoxy compound with reactive double bond group Object (K1) preferably has aromatic rings.As reactive double bond group possessed by epoxide (K1), ethylene is preferably enumerated Base, allyl and (methyl) acryloyl group etc., more preferably list (methyl) acryloyl group, further preferably enumerate acryloyl group.
As the epoxide (K1) with such reactive double bond group, can enumerate for example, multi-functional epoxy A part of the epoxy group of compound is converted into compound made of the group comprising reactive double bond group.Such chemical combination Object can for example be synthesized by making acrylic acid carry out addition reaction with epoxy group.Alternatively, can enumerate comprising reactive double bond The group of group is bonded directly to compound made of aromatic rings for constituting epoxy resin etc. etc..
Here, it as the epoxide (K1) with reactive double bond group, can enumerate: shown in following formula (1) Compound, following formula (2) compound represented or the epoxide without reactive double bond group described below One epoxy group and acrylic acid of (K1 ') carry out compound obtained from addition reaction etc..
(in formula (1), R is H- or CH3, n is 0 or more and 10 integers below.〕
In formula (2), R is H- or CH3, n is 0 or more and 10 integers below.〕
It should be noted that by not having the epoxide (K1 ') of reactive double bond group and reacting for acrylic acid Obtained from the epoxide (K1) with reactive double bond group will form and disappeared completely with unreacted reactant, epoxy group sometimes The mixture of the compound of consumption, in the present embodiment, as long as substantially containing above compound.
(K1 ') does not have the epoxide of reactive double bond group
As the epoxide (K1 ') for not having reactive double bond group, conventionally known epoxy compound can be used Object.It as such epoxide, can specifically enumerate: multifunctional based epoxy resin, bisphenol A diglycidyl ether, bisphenol-A Hydride, o-cresol phenolic epoxy varnish, dicyclopentadiene-type epoxy resin, the biphenyl type epoxy of diglycidyl ether Resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, phenylene matrix type epoxy resin and phenol novolak type With epoxides more than 2 functions in the molecules such as epoxy resin.These epoxides can be used alone, or Two or more is applied in combination.
The number-average molecular weight of epoxide (K1) and (K1 ') are not particularly limited.From the sight of the curability of adhesive layer From the viewpoint of the intensity and heat resistance of point and adhesive layer after hardening, the number of epoxide (K1) and (K1 ') are divided equally Son amount is separately preferably 300 or more and 30000 or less, is more preferably 400 or more and 10000 or less, is further preferred It is 500 or more and 10000 or less.In addition, relative to 100 moles of epoxy group in the total amount of epoxide (K1) and (K1 '), Reactive double bond group content in the total amount [(K1)+(K1 ')] of epoxide (K1) and (K1 ') be 0.1 mole or more and 1000 moles or less, preferably 1 mole or more and 500 moles or less, be more preferably 10 moles or more and 400 moles with Under.When reactive double bond group content in the total amount of epoxide (K1) and (K1 ') is more than 1000 moles, there are heat cures The insufficient hidden danger of property.In the present specification, number-average molecular weight can be by utilizing coagulating using tetrahydrofuran (THF) as solvent The form of the obtained value for being scaled standard polystyren of glue penetration chromatography (GPC) is found out.
Thermal curing agents play a role as the curing agent for epoxide (K1) and (K1 ').
(K2) with the thermal curing agents of reactive double bond group
Thermal curing agents (K2) with reactive double bond group are the thermal curing agents with polymerism carbon-to-carbon double bond group. As reactive double bond group possessed by thermal curing agents (K2), vinyl, allyl and (methyl) acryloyl are preferably enumerated Base etc., more preferably enumerates methylacryloyl.
In addition, thermal curing agents (K2) not only include above-mentioned reactive double bond group, also including can be with epoxy reaction Functional group.As can preferably enumerate phenolic hydroxyl group, alcoholic extract hydroxyl group, amino, carboxyl and acid anhydrides with the functional group of epoxy reaction Base etc., wherein more preferably enumerate phenolic hydroxyl group, alcoholic extract hydroxyl group and amino, further preferably enumerate phenolic hydroxyl group.
It as the thermal curing agents (K2) with reactive double bond group, can enumerate for example: with comprising reactive double bond base Compound made of a part of the hydroxyl of the group substituted phenolic resin of group or the group comprising reactive double bond group are straight Connect compound obtained from being bonded to the aromatic rings of phenolic resin etc..Here, it as phenolic resin, can enumerate: novolaks Type phenolic resin, dicyclopentadiene type phenol resin and multifunctional class phenolic resin etc., particularly preferably phenolic varnish type phenol Urea formaldehyde.Therefore, as the thermal curing agents (K2) with reactive double bond group, preferably with including reactive double bond group Group replaces compound made of a part of the hydroxyl of novolak phenolics or includes reactive double bond group Group is bonded directly to compound obtained from the aromatic rings of novolak phenolics.
It is by reactive double bond base as the more preferred example of the thermal curing agents (K2) with reactive double bond group Group imports structure obtained from a part of the repetitive unit containing phenolic hydroxyl group as following formula (a), can enumerate following formula (b) or (c) such compound containing the repetitive unit with the group comprising reactive double bond group.Particularly preferred tool There are the repetitive unit of the thermal curing agents (K2) of reactive double bond group containing following formula (a) and following formula (b) or repetition list (c) Member.
(in formula (a), n is 0 or 1.)
(in formula (b) and formula (c), n is each independently 0 or 1.
In formula (b) and formula (c), R1It is each independently the hydrocarbon below of carbon atom number 1 or more and 5 optionally with hydroxyl Base, and there are X to be each independently-O- ,-NR2-(R2For hydrogen or methyl) the case where and R1The case where X is singly-bound, A are (methyl) Acryloyl group.)
The phenolic hydroxyl group contained in repetitive unit (a) is that can have with the functional group of epoxy reaction in adhesive layer As the function with the cured curing agent of the epoxy reaction of epoxide when heat cure.Repetitive unit (b) and (c) in contain Reactive double bond group the compatibility of acrylate copolymer (J1) and Thermocurable ingredient (K) can be improved, and pass through reaction Property double bond group carries out addition polymerization each other, and three-dimensional net structure can be formed in adhesive layer.As a result, adhesive layer Solidfied material (solidifying adhesive layer (protective film)) has more tough property, and the reliability of semiconductor device thus can be improved.Separately Outside, repetitive unit (b) and (c) in the reactive double bond group that contains polymerize when carrying out energy line curing to adhesive layer Solidification has the function of making the reduction of the bonding force of adhesive layer and substrate.
The ratio of repetitive unit shown in above-mentioned (a) formula is preferably 5 moles of % or more in the thermal curing agents (K2) and 95 rub It your % or less, more preferably 20 moles of % or more and 90 mole of % or less, further preferably 40 moles of % or more and 80 rubs Your % hereinafter, the ratio of above-mentioned (b) or (c) repetitive unit shown in formula amount to be preferably 5 moles of % or more and 95 mole of % with Under, more preferably 10 moles of % or more and 80 mole of % or less, further preferably 20 moles of % or more and 60 mole of % or less.
(K2 ') does not have the thermal curing agents of reactive double bond group
As the thermal curing agents (K2 ') for not having reactive double bond group, can enumerate has 2 or more energy in 1 molecule The compound of enough and epoxy reaction functional group.It as the functional group, can enumerate: phenolic hydroxyl group, alcoholic extract hydroxyl group, amino, carboxyl And anhydride group etc..Wherein, phenolic hydroxyl group, amino and anhydride group etc. are preferably enumerated, phenolic hydroxyl group and amino are further preferably enumerated.
As the specific example of the thermal curing agents (amine thermal curing agents) with amino, DICY (dicyandiamide) can be enumerated.
As the specific example of the thermal curing agents (phenols thermal curing agents) with phenolic hydroxyl group, can enumerate: multifunctional class phenol Urea formaldehyde, bis-phenol, novolak phenolics, bicyclopentadiene class phenolic resin and aralkyl phenolic resin.
Thermal curing agents (K2 ') without reactive double bond group can be used alone, or mixes two or more and make With.
The number-average molecular weight of above-mentioned thermal curing agents (K2) and (K2 ') is preferably 40 or more and 30000 or less, is more preferably It 60 or more and 10000 or less, is more preferably 80 or more and 10000 or less.
It is hot in adhesive layer relative to total [(K1) and (K1 ')] 100 mass parts of epoxide (K1) and (K1 ') Total [(K2) and (K2 ')] content of curing agent (K2) and (K2 ') be preferably 0.1 mass parts or more and 500 below the mass, more More than preferably 1 mass parts and 200 below the mass.When the content of thermal curing agents is few, exists and solidify insufficient and can not obtain The hidden danger of cementability.In addition, the content of thermal curing agents [(K2) and (K2 ')] is excellent relative to 100 mass parts of component of polymer (J) It is selected as 1 mass parts or more and 50 below the mass, more than more preferably 2 mass parts and 40 below the mass.Thermal curing agents contain When amount is few, exists and solidify insufficient and cementability can not be obtained.
In the gross mass of adhesive layer, Thermocurable ingredient (K) (epoxy is preferably contained with the ratio lower than 50 mass % The total [(K1)+(K1 ')+(K2)+(K2 ')] of compound and thermal curing agents), more preferably with 1 mass % or more and 30 mass % Ratio below is contained Thermocurable ingredient (K), is further preferably contained with 5 mass % or more and 25 mass % ratios below Thermocurable ingredient (K).In addition, in adhesive layer, relative to 100 mass parts of component of polymer (J), preferably with 1 mass parts Range more than or lower than 105 mass parts contains Thermocurable ingredient (K), more preferably with 1 mass parts more than or lower than 100 mass Part range contain Thermocurable ingredient (K), further preferably with more than 3 mass parts and 60 range below the mass contains heat Curability composition (K), particularly preferably with more than 3 mass parts and 40 range below the mass contains Thermocurable ingredient (K).It is special It is not in the case where reducing the content of Thermocurable ingredient (K), for example, relative to 100 mass parts of component of polymer (J) Can get effect below more than 3 mass parts and in the case where degree that 40 range below the mass contains.It will partly lead It, also can be in heat even if adhesive layer is exposed to high temperature before body chip adheres to adhesive layer and makes adhesive layer heat cure The a possibility that of generating gap, is reduced in adhesive layer in curing process.When the content of Thermocurable ingredient (K) is excessive, existing can not Obtain the hidden danger of enough cementabilities.
(K3) curing accelerator
Curing accelerator (K3) can be used for adjusting the curing rate of adhesive layer.Using epoxies Thermocurable ingredient When as Thermocurable ingredient (K), particularly preferably curing accelerator (K3) is used.
As preferred curing accelerator, in tertiary amines, imidazoles, organic phosphine and tetraphenyl boron salt etc. extremely Few one kind.As tertiary amines, can enumerate for example: triethylenediamine, benzyl dimethylamine, triethanolamine, dimethylaminoethyl Alcohol and three (dimethylaminomethyl) phenol etc..It as imidazoles, can enumerate for example: 2-methylimidazole, 2- phenylimidazole, 2- Phenyl -4-methylimidazole, 2- phenyl -4,5- bishydroxymethyl imidazoles and 2- phenyl -4- methyl -5- hydroxymethylimidazole etc..Make For organic phosphine, can enumerate for example: tributylphosphine, diphenylphosphine and triphenylphosphine etc..As tetraphenyl boron salt, can enumerate Such as: tetraphenylTetraphenyl borate salts and triphenylphosphine tetraphenyl borate salts etc..Curing accelerator can be used alone, Or mix two or more use.
Using curing accelerator (K3), relative to Thermocurable ingredient (K) total [(K1)+(K1 ')+ (K2)+(K2 ')] 100 mass parts, preferably with more than 0.01 mass parts and 10 amount below the mass contains curing accelerator (K3), more preferably with more than 0.1 mass parts and 2.5 amount below the mass contains curing accelerator (K3).By with above-mentioned model The amount enclosed contains curing accelerator (K3), and adhesive layer is also glued with excellent under conditions of being exposed to high-temperature and high humility Connect characteristic.In addition, containing curing accelerator (K3) by the amount with above range, adhesive layer is being used to form protection upside-down mounting In the case where the solidification adhesive layer (protective film) at the back side of type semiconductor chip, the back-protective function of chip is excellent.Solidification When the content of promotor (K3) is few, exists and solidify hidden danger insufficient to obtain enough adhesion properties.
In adhesive layer other than the adhesive ingredients with reactive double bond group, following component can also be contained.
(L) packing material
Adhesive layer can contain packing material (L).It is adjustable by the way that packing material (L) is matched with adhesive layer Solidify the thermal expansion coefficient of adhesive layer (protective film) obtained from adhesive layer is solidified, it can be by the way that adhesive layer will be solidified (protective film) improves the reliability of semiconductor device relative to the thermal expansion coefficient optimization of workpiece.It is solid alternatively, it is also possible to reduce Change the hygroscopicity of adhesive layer (protective film).
In addition, solidification adhesive layer (protective film) is as work obtained from making to solidify the adhesive layer of present embodiment Part or in the case that the protective film of chip made of workpiece singualtion plays a role, by implementing laser mark to protective film Note, make packing material (L) using laser ablation part expose, reflection light diffusing and present close to white color.Therefore, When adhesive layer contains colorant (I) described below, poor contrast is obtained between laser labelling part and other parts, Have the effect of that printing is apparent from.
It as preferred packing material (L), can enumerate: silica, aluminium oxide, talcum, calcium carbonate, titanium oxide, oxygen Change the powder of iron, silicon carbide and boron nitride etc., by pearl made of these powder spheroidizations, unijunction crystal fiber and glass fibre etc.. In these packing materials, preferably silica filler and alumina packing.Packing material (L) can be used alone or mix Close two or more use.
As the range of packing material (L) content for reliably obtaining said effect, preferably in the complete of adhesive layer It is 1 mass % or more and 80 mass % or less, more preferably 20 mass % or more and 75 mass % or less in portion's quality.It needs It is bright, in the case where adhesive layer to be used to form to the protective film at the back side of protection flip chip type semiconductor, from raising From the viewpoint of the back-protective function of chip, the content of packing material (L) is particularly preferably in the all-mass of adhesive layer For 40 mass % or more and 70 mass % or less.
In addition, the packing material (L) of present embodiment is preferably by the compound with reactive double bond group to its table Face is modified.Hereinafter, being filled out made of being modified using the compound with reactive double bond group its surface It fills material and is recorded as " packing material that surface has reactive double bond group ".
Reactive double bond group possessed by packing material (L) is preferably vinyl, allyl or (methyl) acryloyl group.
There is untreated packing material used in the packing material of reactive double bond group as surface, in addition to above-mentioned It other than packing material (L), can also enumerate: calcium silicates, magnesium hydroxide, aluminium hydroxide, titanium oxide, talcum, mica and clay etc.. In these packing materials, preferably silica.Silanol group pair possessed by silica and the silane described below The bonding of coupling agent effectively plays a role.
Packing material of the surface with reactive double bond group for example can have reactive double bond group by utilizing Coupling agent is surface-treated the surface of untreated packing material and is obtained.
The above-mentioned coupling agent with reactive double bond group is not particularly limited.As the coupling agent it is preferable to use Such as the coupling agent with vinyl, the coupling agent with styryl and the coupling agent with (methyl) acryloxy. Above-mentioned coupling agent is preferably silane coupling agent.
It as the specific example of above-mentioned coupling agent, can enumerate: vinyltrimethoxysilane, vinyl triethoxyl silicon Alkane, to styryltrimethoxysilane, 3- methacryloxypropyl dimethoxysilane, 3- methacryloxy third Base trimethoxy silane, 3- methacryloxypropyl, 3- methacryloyloxypropyl methyl diethyl Oxysilane and 3- acryloyloxypropyltrimethoxysilane etc..As these commercially available product, can enumerate for example: KBM- 1003, KBE-1003, KBM-1403, KBM-502, KBM-503, KBE-502, KBE-503 and KBM-5103 (are SHIN-ETSU HANTOTAI above Chemical industry Co., Ltd. manufacture).
It is not particularly limited using the method that above-mentioned coupling agent is surface-treated above-mentioned packing material.As the party Method can be enumerated for example: untreated packing material is added to Henschel mixer or V-Mixer etc. being capable of high-speed stirred Mixing machine in be stirred, and directly add coupling agent or coupling agent dissolved and is scattered in alcohol solution, You Jirong The dry method being added in agent or aqueous solution.In addition, can be enumerated as other methods: in the slurry of untreated packing material The slurry method of coupling agent is added in material and makes to assign spray-on process of coupling agent etc. by spraying directly after untreated packing material is dry It connects facture or mixes untreated packing material with acrylic polymer when preparing above-mentioned composition and at this The integration mixing method etc. of coupling agent is directly added when mixing.
The preferred lower limit of the amount for the coupling agent being surface-treated to above-mentioned untreated 100 mass parts of packing material is 0.1 mass parts, preferred upper limit are 15 mass parts.When the amount of coupling agent is lower than 0.1 mass parts, possibly above-mentioned coupling agent can not be utilized Untreated packing material is sufficiently surface-treated, effect cannot be played.
In addition, packing material of the surface with reactive double bond group and the adhesive ingredients with reactive double bond group Compatibility it is excellent, can be evenly dispersed in adhesive layer.
It is preferred that containing surface with reactive double bond base with the ratio lower than 50 mass % in the gross mass of adhesive layer The packing material of group is more preferably contained, further preferably with 5 mass % with 1 mass % or more and 30 mass % ratios below Above and 25 mass % ratios below contain.In addition, relative to 100 mass parts of adhesive ingredients, preferably with 5 mass parts more than And lower than 100 mass parts range contain surface with reactive double bond group packing material, more preferably with 8 mass parts more than And 60 range below the mass contains, further preferably with more than 10 mass parts and 40 range below the mass contains.Table When the amount of packing material of the face with reactive double bond group is excessive, there is the stickup to workpiece or the cementability of substrate is become The hidden danger of difference.Surface have reactive double bond group packing material amount it is very few when, exist be unable to give full play addition this fill out Fill the hidden danger of the effect of material.
The average grain diameter of packing material (L) is preferably that 0.01 μm or more and 10 μm or less of range is interior, is more preferably 0.01 μ In m or more and 0.2 μm or less of range.When the average grain diameter of packing material is in above-mentioned range, it can not damage and workpiece Stickup play cementability.When above-mentioned average grain diameter is excessive, it may occur however that the surface state of piece is deteriorated, the face of adhesive layer Interior unfavorable condition in uneven thickness.
It should be noted that above-mentioned " average grain diameter " can be by using particles distribution instrument (the day machine of dynamic light scattering method Fill Co., Ltd.'s manufacture, device name；Nanotrac150 it) finds out.
It may be speculated that improving package reliability by obtain the average grain diameter above range of packing material can significantly Effect is due to following.
When the average grain diameter of packing material is big, fill packing material to each other by the ingredient shape in addition to packing material At structure also increase.Ingredient in addition to packing material is lower than the coherency of packing material.By in addition to the packing material at In the case where dividing the structure formed big, when the ingredient in addition to packing material is broken, there is what fracture extended on a large scale Hidden danger.On the other hand, when filling material of superfine, the structure formed by the ingredient in addition to packing material also becomes fine.As a result, Even if the ingredient in addition to packing material is broken, introduce the fine structure packing material also can inhibit fracture into Row.As a result, the tendency that there is fracture not extend on a large scale.In addition, in the present embodiment, first possessed by packing material Contain in base acryloxy isoreactivity double bond group and the ingredient (such as adhesive ingredients) in addition to packing material anti- Answering property double bond group can form key.If filling material of superfine, as packing material and the ingredient in addition to packing material Contact area increase, as a result, there are the increased tendencies of the combination of packing material and adhesive ingredients.
(I) colorant
Colorant (I) can be cooperated in adhesive layer.By cooperating colorant, it is installed in machine by semiconductor device When, the malfunction of the semiconductor device caused by capable of preventing because of infrared ray of peripheral devices generation etc..In addition, passing through laser When the methods of label marks solidification adhesive layer (protective film), the effect with labels such as readily discernible text and symbols Fruit.That is, for foring the semiconductor device for solidifying adhesive layer (protective film), semiconductor chip, it usually can be by swashing Product number etc. is printed on solidification bonding agent by cursor notation (method printed using laser ablation protection film surface) The surface of layer (protective film).By making to solidify adhesive layer (protective film) containing colorant (I), solidification bonding can be fully obtained The poor contrast by part and the part not eliminated after laser ablation of oxidant layer (protective film) improves visual recognition.
As colorant, organic pigment, inorganic pigment, organic dyestuff and inorganic dyestuff can be used.As colorant, from From the viewpoint of electromagnetism involves infrared shield, preferably black pigment.As black pigment, carbon black, dioxy can be used Change manganese, nigrosine and active carbon etc., but not limited to this.From the viewpoint of the reliability for improving semiconductor device, especially Preferably carbon black.Colorant (I) can be used alone, and can also combine two or more use.
In the gross mass of adhesive layer, the use level of colorant (I) be preferably 0.1 mass % or more and 35 mass % with Under, more preferably 0.5 mass % or more and 25 mass % or less, further preferably 1 mass % or more and 15 mass % or less.
(M) coupling agent
In order to improve adhesive layer to the stickup of workpiece and cementability and in order to improve the coherency of adhesive layer, The coupling agent (M) with the functional group and the functional group reacted with organo-functional group reacted with inorganic matter can be used.In addition, logical It crosses using coupling agent (M), the heat resistance for solidifying adhesive layer (protective film) can not be damaged and improve its water resistance.As in this way Coupling agent, can enumerate: titante coupling agent, aluminate coupling agent and silane coupling agent etc..It is excellent in these coupling agents Select silane coupling agent.
Silane coupling agent preferably has the functional group being had with component of polymer (J) and Thermocurable ingredient (K) etc. anti- The group answered is as the functional group reacted with organo-functional group.
It as such silane coupling agent, can enumerate: the low molecule silane coupling agent, double with 2 or 3 alkoxies (3- triethoxysilylpropyltetrasulfide) tetrasulfide, vinyltriacetoxy silane and imidizole silane etc..As having The low molecule silane coupling agent of 2 or 3 alkoxies, can enumerate: γ-glycidoxypropyltrime,hoxysilane, γ-ring Oxygen propoxypropyl triethoxysilane, γ-glycidoxypropyl diethoxy silane, β-(3,4- epoxycyclohexyl) Ethyl trimethoxy silane, γ-(methacryloxypropyl) trimethoxy silane, gamma-amino propyl trimethoxy silicane, N- β-(amino-ethyl)-gamma-amino propyl trimethoxy silicane, N- β-(amino-ethyl)-gamma-amino hydroxypropyl methyl diethoxy Silane, N- phenyl-gamma-amino propyl trimethoxy silicane, γ-urea propyl-triethoxysilicane, γ-mercapto propyl trimethoxy silicon Alkane, γ-mercapto hydroxypropyl methyl dimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane and vinyl front three Oxysilane etc..In addition, the silane coupling agent of oligomeric, the silicon of the oligomeric can be enumerated as silane coupling agent Alkane coupling agent is by the above-mentioned low molecule silane coupling agent with 2 or 3 alkoxies and the low molecule with 4 alkoxies Product obtained from silane coupling agent etc. is condensed as the hydrolysis of alkoxy and dehydrating condensation.Especially at above-mentioned low point In sub- silane coupling agent, the low molecule silane coupling agent with 2 or 3 alkoxies and the low molecule with 4 alkoxies The reactivity of the alkoxy of the oligomer of product obtained from silane coupling agent is condensed as dehydrating condensation is high and has foot The organo-functional group of enough amounts, therefore preferably.It as such oligomer, can enumerate for example: 3- (2,3- glycidoxy) The oligomer of propylmethoxy siloxanes and the copolymer of dimethoxysiloxane.
These silane coupling agents can be used alone, or mix two or more use.
Relative to 100 mass parts of adhesive ingredients, usually with more than 0.1 mass parts and 20 ratio below the mass contains Silane coupling agent, preferably with more than 0.2 mass parts and 10 ratio below the mass contains silane coupling agent, more preferably with 0.3 More than mass parts and 5 ratio below the mass contains silane coupling agent.When the content of silane coupling agent is lower than 0.1 mass parts, Possibly said effect can not be obtained, when more than 20 mass parts, be likely to become the reason of leading to exhaust.
(N) crosslinking agent
In order to adjust the initial bonding force and cohesiveness of adhesive layer, can be added in adhesive layer crosslinking agent (N).It needs It is noted that above-mentioned acrylate copolymer (J1) can contain reactive functional groups in the case where cooperating crosslinking agent.
As crosslinking agent (N), organic polyisocyanate compound and organic more group with imine moiety can be enumerated.As crosslinking Agent (N) can be exemplified out and the friendship of example out as the crosslinking agent (B) recorded in Japanese Unexamined Patent Publication 2016-027655 bulletin Join the identical crosslinking agent of agent.
In the case where using isocyanates crosslinking agent, it is preferable to use having propylene of the hydroxyl as reactive functional groups Acid polymer (J1).Crosslinking agent crosslinks agent and third with isocyanate group and when acrylate copolymer (J1) has hydroxyl The reaction of olefin(e) acid polymer (J1), easily can import adhesive layer for cross-linked structure.
Using crosslinking agent (N), relative to 100 mass parts of acrylate copolymer (J1), usually with 0.01 matter It measures part or more and 20 ratio below the mass is using crosslinking agent (N), preferably more than 0.1 mass parts and 10 below the mass Ratio using crosslinking agent (N), more preferably with it is more than 0.5 mass parts and 5 ratio below the mass use crosslinking agent (N).
(P) Photoepolymerizationinitiater initiater
Photoepolymerizationinitiater initiater (P) can be cooperated in adhesive layer.As Photoepolymerizationinitiater initiater (P), can be gone out with specific example With the identical Photoepolymerizationinitiater initiater of Photoepolymerizationinitiater initiater (E) recorded in Japanese Unexamined Patent Publication 2016-027655 bulletin.
Using Photoepolymerizationinitiater initiater (P), mixing ratio can be based on above-mentioned surface packing material (L) Reactive double bond group and adhesive ingredients possessed by reactive double bond group total amount and suitably set.Photopolymerization causes The mixing ratio of agent (P) does not limit.For the mixing ratio of Photoepolymerizationinitiater initiater (P), for example, relative to having reaction The component of polymer of property double bond group, the Thermocurable ingredient with reactive double bond group and above-mentioned packing material it is total Count 100 mass parts, Photoepolymerizationinitiater initiater (P) be usually 0.1 mass parts or more and 10 below the mass, preferably 1 mass parts with It is upper and 5 below the mass.It is insufficient there are photopolymerization and can not obtain when the content of Photoepolymerizationinitiater initiater (P) is lower than above range The hidden danger of satisfied reaction is obtained, when being higher than above range, generates the residue for being helpless to photopolymerization, there are the solidifications of adhesive layer The insufficient hidden danger of property.
(M) universal additive
In adhesive layer in addition to the foregoing, various additives can also be cooperated as needed.It, can as various additives To enumerate the universal additive illustrated in first embodiment (I) and remover etc..
Composition (the second bonding agents for mixing above-mentioned each ingredient in appropriate proportions can be used for example in adhesive layer Composition) it obtains.Second bonding agents composition can be diluted with solvent in advance, can also be added in solvent in mixing.Separately Outside, it can be diluted when using second bonding agents composition with solvent.
It as such solvent, can enumerate: ethyl acetate, methyl acetate, ether, dimethyl ether, acetone, methyl ethyl ketone, second Nitrile, hexane, hexamethylene, toluene and heptane etc..
The thickness of adhesive layer is preferably 1 μm or more and 100 μm or less, more preferably 2 μm or more and 90 μm or less, into one Preferably 3 μm or more and 80 μm or less of step.By the way that the thickness of adhesive layer is set as above range, adhesive layer is as reliability High bonding agent or protective film and play a role.
(manufacturing method of semiconductor device)
Fig. 3 (Fig. 3 A~Fig. 3 D) and Fig. 4 (Fig. 4 A~Fig. 4 D) is the manufacturer for showing the semiconductor device of present embodiment The figure of one example of method.
In the manufacturing method of the semiconductor device of present embodiment, the bonding for having substrate 11 and adhesive layer 12 is used Laminated body 1.
Adhesive layer 12, which is preferably comprised from outside, receives energy and cured curing type bonding agent.As what is be externally supplied Energy can be enumerated for example: ultraviolet light, electron beam and heat etc..Adhesive layer 12 preferably comprise ultraviolet hardening bonding agent and In heat curable adhesive at least any one.In the present embodiment, as the bonding agent contained in adhesive layer 12, example It is such as preferably above-mentioned second bonding agents composition.
Semiconductor chip adhering processes
Fig. 3 A shows the process (half of the adhesive layer 12 for making semiconductor chip CP be pasted on bonding laminated body 1 Conductor chip adhering processes) diagrammatic cross-section that is illustrated.In the present embodiment, as shown in Figure 3A, make multiple semiconductors Chip CP is pasted on adhesive layer 12.It when pasting semiconductor chip CP, can paste one by one, can also paste and multiple partly lead simultaneously Body chip CP.
Semiconductor chip CP used in present embodiment has circuit face W1 and conduct provided with connection terminal W3 With the chip back W2 at the element back side of circuit face W1 opposite side.In the present embodiment, circuit face W1 is made to be pasted on bonding agent Layer 12.
Reinforcing frame adhering processes
In the present embodiment, preferably further have in a same manner as in the first embodiment and reinforcing frame 2 is pasted on adhesive layer The process (reinforcing frame adhering processes) of stack 1 (referring to Fig. 3 A).The shape of reinforcing frame 2 is not particularly limited, as reinforcing frame 2 Example is identical as the 1st embodiment.
In the present embodiment, identical as the 1st embodiment, the process for pasting reinforcing frame 2 can make semiconductor chip CP is implemented before being pasted on the process of bonding laminated body 1, can also be implemented later.
Adhesive layer curing process
Fig. 3 B, which is shown, solidifies the process (adhesive layer of adhesive layer 12A for being solidified to form adhesive layer 12 Curing process) diagrammatic cross-section that is illustrated.By solidifying adhesive layer 12, semiconductor chip CP is more firmly adhered to Solidify adhesive layer 12A, the movement of the semiconductor chip CP in subsequent resin seal process can be inhibited.
Make the cured method of adhesive layer 12 in a same manner as in the first embodiment preferably according to viscous contained by adhesive layer 12 It connects agent type and suitably selects.
In the present embodiment, since reinforcing frame 2 is pasted on adhesive layer 12, can inhibit because of adhesive layer 12 The flexure and curling of laminated body 1 are bonded caused by contraction when solidification.It is therefore preferable that being solidified to form adhesive layer 12 Reinforcing frame 2 is set to be pasted on adhesive layer 12 in advance before solidifying the process of adhesive layer 12A.
Sealing process
Fig. 3 C is shown for solidifying the work being sealed after adhesive layer 12A to multiple semiconductor chip CP in formation The diagrammatic cross-section that sequence (sealing process) is illustrated.
In the present embodiment, it is formed and coating the chip back side W2 of semiconductor chip CP with containment member 30 close Seal body 3A.Containment member 30 is also filled between multiple semiconductor chip CP.In the present embodiment, due to reinforcing frame 2 The inside of enclosed seal 3A, therefore, the rigidity of seal 3A are improved, and can inhibit the semiconductor packages generated after resin seal Warpage.
It is not particularly limited using the method that containment member 30 seals multiple semiconductor chip CP, it can be cited for example that the 1st The method etc. illustrated in embodiment.
As the material of containment member 30, it can be cited for example that material, the composition etc. that illustrate in the 1st embodiment.
In the present embodiment, it is possible to implement the curing process of the addition illustrated in the 1st embodiment.
Substrate stripping process
Fig. 3 D shows the work for the substrate 11 of removing bonding laminated body 1 after by multiple semiconductor chip CP sealing The diagrammatic cross-section that sequence (substrate stripping process) is illustrated.
In the present embodiment, in the state of will solidify adhesive layer 12A and remain on seal 3A by substrate 11 from close It is removed on envelope body 3A.
Connection terminal exposes process
Fig. 4 A shows the process for exposing the connection terminal W3 of semiconductor chip CP on the surface of seal 3A The diagrammatic cross-section that (connection terminal exposing process) is illustrated.
In the present embodiment, consolidating the seal 3A of the circuit face W1 of cladding semiconductor chip CP, connection terminal W3 Part or all of removing for changing adhesive layer 12A, exposes connection terminal W3.Reveal the connection terminal W3 of semiconductor chip CP Method out is not particularly limited.It as the method for exposing the connection terminal W3 of semiconductor chip CP, can enumerate for example: logical It crosses the methods of laser irradiation and removes and solidify adhesive layer 12A and make the method for connection terminal W3 exposing and removed by etching method The method etc. gone to solidify adhesive layer 12A and expose connection terminal W3.In the present embodiment, if can with describe below The electrical connection of wiring layer again, the whole of connection terminal W3 can be made to expose, a part dew of connection terminal W3 can also be made Out.
Wiring layer formation process again
Fig. 4 B shows process (the wiring layer shape again for the wiring layer again 4 being electrically connected for formation with semiconductor chip CP At process) diagrammatic cross-section that is illustrated.
In the present embodiment, it is electrically connected wiring layer 4 with the connection terminal W3 exposed on the surface seal 3A.At this In embodiment, wiring layer 4 again are formed on circuit face W1 and on the face 3S of seal 3A.The method for forming again wiring layer 4 can To use conventionally known method.
Wiring layer 4 has the external electrode pads 41 for connecting external terminal electrode again.In the present embodiment, more A position forms external electrode pads 41.In the present embodiment, the area for being fanned out to (Fan-Out) semiconductor chip CP is formd External electrode pads 41 other than domain.
External terminal electrode connects process
Fig. 4 C shows that (external terminal electrode connects for making external terminal electrode 5 with wiring layer 4 is electrically connected again process Connect process) diagrammatic cross-section that is illustrated.
In the present embodiment, the external terminal electrodes such as solder ball 5 are placed in external electrode pads 41, pass through welding etc. It is electrically connected external terminal electrode 5 with external electrode pads 41.The material of solder ball is not particularly limited, can enumerate for example containing Kupper solder and lead-free solder etc..
Singualtion operation
Fig. 4 D shows process (the monolithic chemical industry of the seal 3A singualtion for that will be connected with external terminal electrode 5 Sequence) diagrammatic cross-section that is illustrated.
The method of seal 3A singualtion is not particularly limited.It can be cited for example that side identical with the 1st embodiment Method.Seal 3A can be pasted on the bonding sheets such as cutting sheet by the process of seal 3A singualtion to implement.
In the present embodiment, it, by seal 3A singualtion, is manufactured in a manner of comprising multiple semiconductor chip CP Semiconductor packages 100A comprising multiple semiconductor chip CP.In semiconductor packages 100A, solidification adhesive layer 12A is set to The circuit face W1 of semiconductor chip CP.That is, bonding laminated body 1 adhesive layer 12 be not be stripped after resin seal it is interim Fixed-purpose, but it is adhered to semiconductor chip CP securely in the form of solidifying adhesive layer 12A, as semiconductor packages A part of 100A and contain.
In the present embodiment, due to make external terminal electrode 5 and be fanned out to the region of (Fan-Out) semiconductor chip CP with Outer external electrode pads 41 connect, therefore semiconductor packages 100A may be used as the wafer-level packaging (FO-WLP) of fan-out-type.
Installation procedure
The manufacturing method of the semiconductor device of present embodiment preferably includes semiconductor packages 100A being installed on printing cloth The process (sometimes referred to as installation procedure) of line substrate etc..
The effect of embodiment
Adhesive tape is used as recording in the manufacturing method of semiconductor device according to the present embodiment, with document 1 Method compare, the pressure being able to suppress when resin seal in a same manner as in the first embodiment due to, makes semiconductor chip CP from finger The unfavorable condition of deviation is set in positioning, can simplify manufacturing process.
In addition, the rigidity of seal 3A can be improved, be able to suppress since solidification adhesive layer 12A has rigidity The warping of semiconductor package occurred after resin seal.
(the 3rd embodiment)
The manufacturing method of the semiconductor device of present embodiment is using the manufacturing method of bonding laminated body, the adhesive layer Stack includes substrate and adhesive layer, and further includes adhesive phase between above-mentioned adhesive layer and above-mentioned substrate.This The manufacturing method of the semiconductor device of embodiment is with the following process: multiple semiconductor elements are pasted on such adhesive layer The process of the above-mentioned adhesive layer of stack；Above-mentioned adhesive layer is set to be solidified to form the process for solidifying adhesive layer；On multiple The process stated semiconductor element encapsulation and form the seal with sealing resin layer；Above-mentioned substrate is shelled from above-mentioned seal From the process without removing above-mentioned solidification adhesive layer from above-mentioned seal；What formation was electrically connected with above-mentioned semiconductor element The process of wiring layer again；And the process for being electrically connected external terminal electrode with above-mentioned wiring layer again.
The process that above-mentioned substrate is removed from above-mentioned seal is preferably not by above-mentioned solidification adhesive layer from above-mentioned close The process removed on envelope body and removed in the interface of above-mentioned adhesive phase and above-mentioned solidification adhesive layer.
(bonding laminated body)
In the manufacturing method of the semiconductor device of present embodiment, using have substrate 11, adhesive layer 12 and bonding The bonding laminated body 1A of oxidant layer 13 (referring to Fig. 5 A).
(substrate)
Substrate 11 is not particularly limited, and substrate identical with the substrate illustrated in the 1st embodiment can be used for example.
(adhesive layer)
Adhesive layer 12, which is preferably comprised from outside, receives energy and cured curability bonding agent.As what is be externally supplied Energy can be enumerated for example: ultraviolet light, electron beam and heat etc..Adhesive layer 12 preferably comprise ultraviolet hardening bonding agent and In heat curable adhesive at least any one.In the present embodiment, as the bonding agent contained in adhesive layer 12, example It is such as preferably at least any one bonding agent group in above-mentioned first bonding agents composition and above-mentioned second bonding agents composition Close object.
(adhesive phase)
Adhesive phase 13 is contained between substrate 11 and adhesive layer 12.In bonding laminated body 1A, 12 layers of adhesive layer It is stacked on the adhesive phase 13 equipped with substrate 11.
Adhesive phase 13 can be by having the weak adhesiveness for the bonding force that can remove 12 degree of adhesive layer to bond dosage form At, can also by when energy line irradiates bonding force reduce energy ray-curable adhesive be formed.In addition, in use by energy In the case where the adhesive phase that line curing adhesive is formed, to the region of lamination adhesive oxidant layer 12 (such as the inner circumferential of substrate 11 Portion) energy line irradiation is carried out in advance, reduce adhesiveness, to other regions (such as peripheral part of substrate 11) without energy line It irradiates, such as in order to be adhered to fixture, the state that bonding force can be kept high.In order to only not carry out energy line photograph to other regions It penetrates, such as energy line shielded layer can be arranged in the region corresponding with other regions of substrate 11 by printing etc., from substrate 11 Side carries out energy line irradiation.
Adhesive phase 13 can be formed by conventionally known various adhesives.Adhesive phase 13 for example can be by being selected from General purpose adhesive, energy line solidification type adhesive and contain thermal expansion ingredient adhesive at least any one adhesive It is formed.As general purpose adhesive, for example, be preferably selected from rubber adhesive, acrylic adhesives, silicone adhesive category, At least any one adhesive in carbamates adhesive and vinyl ethers adhesive.In addition, as adhesive phase 13 Form, also include have core material and be located at core material two sides adhesive phase form.
In addition, adhesive phase 13 is preferably thermal expansivity adhesive phase.Thermal expansivity adhesive phase is bonded by thermal expansivity Dosage form at.Thermal expansivity adhesive contains adhesive and thermal expansivity ingredient.It is thermal expansivity adhesive phase in adhesive phase 13 In the case where, the contact area of thermal expansivity adhesive phase and adherend can be made to reduce by heating, reduce bonding force.Make For thermal expansivity ingredient, thermal expansivity particle can be used.Thermal expansivity particle is, for example, will be swollen by heating easy gasification Swollen substance encapsulation in flexible shell made of particle.The substance expanded as gasification can be enumerated for example: isobutyl Alkane, propane and pentane etc..The especially surface shape of thermal expansivity particle easily controllable adhesive phase after heating expansion, thus It is easy to become adhesive phase by heating the state being easily peeled off from the state of strong bonding, therefore preferably.In addition, as heat Foaming agent can be used in swellable composition.Foaming agent is the chemical substance that the ability of gas is for example generated with thermal decomposition.Make For the gas of generation, can enumerate for example: water, carbon dioxide and nitrogen etc..By being dispersed in foaming agent in adhesive, play with The similar effect of thermal expansivity particle.
The thickness of adhesive phase 13 is not particularly limited.The thickness of adhesive phase 13 is usually 1 μm or more and 50 μm or less, Preferably 5 μm or more and 30 μm or less.
(manufacturing method of semiconductor device)
Fig. 5 (Fig. 5 A~Fig. 5 E) is the figure for showing an example of manufacturing method for the semiconductor device of present embodiment.
In the manufacturing method of the semiconductor device of present embodiment, bonding laminated body 1A is used.
Semiconductor chip adhering processes
Fig. 5 A shows the process (half of the adhesive layer 12 for making semiconductor chip CP be pasted on bonding laminated body 1A Conductor chip adhering processes) diagrammatic cross-section that is illustrated.In the present embodiment, make multiple partly to lead as illustrated in fig. 5b Body chip CP is pasted on adhesive layer 12.It when pasting semiconductor chip CP, can paste, can also paste simultaneously multiple one by one Semiconductor chip CP.
Semiconductor chip CP used in present embodiment has circuit face W1 and conduct provided with connection terminal W3 With the chip back W2 at the element back side of circuit face W1 opposite side.In the present embodiment, chip back W2 is made to be pasted on bonding Oxidant layer 12.
Reinforcing frame adhering processes
In the present embodiment, preferably further have in a same manner as in the first embodiment and reinforcing frame 2 is pasted on adhesive layer The process (reinforcing frame adhering processes) of stack 1A (referring to Fig. 5 A and Fig. 5 B).The shape of reinforcing frame 2 is not particularly limited, as adding The example of strong frame 2 is identical as the 1st embodiment.
In the present embodiment, identical as the 1st embodiment, the process for pasting reinforcing frame 2 can make semiconductor chip CP is implemented before being pasted on the process of bonding laminated body 1A, semiconductor chip CP can also be made to be pasted on bonding laminated body 1A's Implement after process.
Adhesive layer curing process
Fig. 5 C, which is shown, solidifies the process (adhesive layer of adhesive layer 12A for being solidified to form adhesive layer 12 Curing process) diagrammatic cross-section that is illustrated.By solidifying adhesive layer 12, semiconductor chip CP is more firmly adhered to Solidify adhesive layer 12A, the movement of the semiconductor chip CP in subsequent resin seal process can be inhibited.
Make the cured method of adhesive layer 12 in a same manner as in the first embodiment preferably according to viscous contained by adhesive layer 12 It connects agent type and suitably selects.
In the present embodiment, since reinforcing frame 2 is pasted on adhesive layer 12, can inhibit because of adhesive layer 12 The flexure and curling of laminated body 1A are bonded caused by contraction when solidification.It is therefore preferable that solidifying adhesive layer 12 and shape Reinforcing frame 2 is set to be pasted on adhesive layer 12 in advance before at the process for solidifying adhesive layer 12A.
Sealing process
Fig. 5 D is shown for solidifying the work being sealed after adhesive layer 12A to multiple semiconductor chip CP in formation The diagrammatic cross-section that sequence (sealing process) is illustrated.
In the present embodiment, sealing is formed and coating the circuit face side W1 of semiconductor chip CP with containment member 30 Body 3.Containment member 30 is also filled between multiple semiconductor chip CP.In the present embodiment, since reinforcing frame 2 is also enclosed The inside of seal 3, therefore, the rigidity of seal 3 are improved, and can inhibit the warpage of the semiconductor packages generated after resin seal.
It is not particularly limited using the method that containment member 30 seals multiple semiconductor chip CP, it can be cited for example that the 1st The method etc. illustrated in embodiment.As the material of containment member 30, it can be cited for example that the material illustrated in the 1st embodiment Material, composition etc..
In the present embodiment, it is possible to implement the curing process of the addition illustrated in the 1st embodiment.It needs to illustrate It is that can not also implement additional curing process and solidify containment member 30 sufficiently by the heating in sealing process.
Stripping process
Fig. 5 E show for by multiple semiconductor chip CP sealing after removing bonding laminated body 1A substrate 11 and The diagrammatic cross-section that the process (sometimes referred to as stripping process) of adhesive phase 13 is illustrated.
In the present embodiment, by substrate 11 and bonding in the state of will solidify adhesive layer 12A and remain on seal 3 Oxidant layer 13 is removed from seal 3.Bonding laminated body 1A can be shelled in adhesive phase 13 and the interface for solidifying adhesive layer 12A From.
After substrate stripping process, such as it can similarly implement connection terminal by first embodiment and expose process (referring to Fig. 2A), again wiring layer formation process (referring to Fig. 2 B), external terminal electrode connection process (referring to Fig. 2 C) and monolithic Chemical industry sequence (referring to Fig. 2 D) manufactures semiconductor packages 100.It, can be in the manufacturing method of the semiconductor device of present embodiment Further implement installation procedure.
The effect of embodiment
The manufacturing method of semiconductor device according to the present embodiment can play effect same as the first embodiment Fruit.
In addition, the manufacturing method of semiconductor device according to the present embodiment, due to bonding laminated body 1A substrate 11 with Between adhesive layer 12 include adhesive phase 13, therefore, in making the cured process of adhesive layer, can inhibit adhesive layer from Float on substrate.
(the 4th embodiment)
The manufacturing method of the semiconductor device of present embodiment be using the bonding sheet for having substrate and adhesive phase and The manufacturing method for having the semiconductor element of adhesive layer.
The manufacturing method of the semiconductor device of present embodiment is with the following process: by the upper of multiple above-mentioned semiconductor elements State the process that adhesive layer fits in the above-mentioned adhesive phase of bonding sheet；Above-mentioned adhesive layer is set to be solidified to form solidification bonding agent The process of layer；The process that multiple above-mentioned semiconductor element encapsulations are formed into the seal with sealing resin layer；By above-mentioned base The process that material is removed from above-mentioned seal without removing above-mentioned solidification adhesive layer from above-mentioned seal；Formed with it is above-mentioned The process of the wiring layer again of semiconductor element electrical connection；And the work for being electrically connected external terminal electrode with above-mentioned wiring layer again Sequence.
The process that above-mentioned substrate is removed from above-mentioned seal is preferably not by above-mentioned solidification adhesive layer from above-mentioned close The process removed on envelope body and removed in the interface of above-mentioned adhesive phase and above-mentioned solidification adhesive layer.
It should be noted that in the present specification, bonding sheet, which has, is pasted on the bonding force that can be removed after adherend, It is different from having the adhesive sheet of bonding force for being firmly fixed at adherend as adhesive layer.
(bonding sheet)
In the manufacturing method of the semiconductor device of present embodiment, the bonding for having substrate 11 and adhesive phase 13 is used Piece 1B (referring to Fig. 6 A).
(substrate)
Substrate 11 is not particularly limited, and substrate identical with the substrate illustrated in the 1st embodiment can be used for example.
(adhesive phase)
Adhesive phase 13 is set to substrate 11.Adhesive phase 13 can be used and the adhesive that illustrates in the 3rd embodiment The identical adhesive phase of layer.
(manufacturing method of semiconductor device)
Fig. 6 (Fig. 6 A~Fig. 6 E) and Fig. 7 (Fig. 7 A~Fig. 7 D) is the manufacturer for showing the semiconductor device of present embodiment The figure of one example of method.
In the manufacturing method of the semiconductor device of present embodiment, bonding sheet 1B is used.
Semiconductor chip adhering processes
Fig. 6 A shows the process (semiconductor of the adhesive phase 13 for making semiconductor chip CP be pasted on bonding sheet 1B Chip adhering processes) diagrammatic cross-section that is illustrated.
Semiconductor chip CP used in present embodiment has circuit face W1 and conduct provided with connection terminal W3 With the chip back W2 at the element back side of circuit face W1 opposite side.Adhesive layer 14 is set to the chip back of semiconductor chip CP W2.As the bonding agent contained in adhesive layer 14, such as preferably above-mentioned first bonding agents composition and above-mentioned second bonding At least any one adhesive composite in agent composition.
In the present embodiment, as shown in Figure 6B, multiple semiconductor chip CP are pasted on viscous by folder across adhesive layer 14 Close the adhesive phase 13 of piece 1B.It when pasting semiconductor chip CP, can paste one by one, multiple semiconductors can also be pasted simultaneously Chip CP.
Reinforcing frame adhering processes
In the present embodiment, preferably further there is process (the reinforcing frame stickup that reinforcing frame 2 is pasted on to bonding sheet 1B Process) (referring to Fig. 6 A and Fig. 6 B).By the way that reinforcing frame 2 is pasted on bonding sheet 1B, the manufacturing method of semiconductor device can be improved Technique in be pasted with semiconductor chip CP bonding sheet 1B operability etc..
The shape of reinforcing frame 2 is not particularly limited, identical as the 1st embodiment as the example of reinforcing frame 2.
In the present embodiment, semiconductor chip CP can be pasted on bonding sheet 1B's by the process for pasting reinforcing frame 2 Implement before process, can also implement after semiconductor chip CP is pasted on the process of bonding sheet 1B.
Adhesive layer curing process
Fig. 6 C, which is shown, solidifies the process (adhesive layer of adhesive layer 14A for being solidified to form adhesive layer 14 Curing process) diagrammatic cross-section that is illustrated.By solidifying adhesive layer 14, semiconductor chip CP is adhered to solid securely Change adhesive layer 14A, the movement of the semiconductor chip CP in subsequent resin seal process can be inhibited.
Make the cured method of adhesive layer 14 in a same manner as in the first embodiment preferably according to viscous contained by adhesive layer 14 It connects agent type and suitably selects.
In the present embodiment, since reinforcing frame 2 is pasted on bonding sheet 1B, can inhibit because adhesive layer 14 is solid The flexure and curling of bonding sheet 1B caused by contraction when change.It is therefore preferable that making adhesive layer 14 be solidified to form solidification Reinforcing frame 2 is set to be pasted on adhesive phase 13 in advance before the process of adhesive layer 14A.
Sealing process
Fig. 6 D is shown for solidifying the work being sealed after adhesive layer 14A to multiple semiconductor chip CP in formation The diagrammatic cross-section that sequence (sealing process) is illustrated.
In the present embodiment, sealing is formed and coating the circuit face side W1 of semiconductor chip CP with containment member 30 Body 3B.Containment member 30 is also filled between multiple semiconductor chip CP.In the present embodiment, due to reinforcing frame 2 and admittedly Change the inside that adhesive layer 14A encloses seal 3B, therefore, the rigidity of seal 3B improves, and generates after can inhibit resin seal Semiconductor packages warpage.It is not particularly limited using the method that containment member 30 seals multiple semiconductor chip CP, it can be with It enumerates such as the method illustrated in the 1st embodiment.As the material of containment member 30, it can be cited for example that the 1st embodiment party Material, composition for illustrating in formula etc..
In the present embodiment, it is possible to implement the curing process of the addition illustrated in the 1st embodiment.It needs to illustrate It is that can not also implement additional curing process and solidify containment member 30 sufficiently by the heating in sealing process.
Bonding sheet stripping process
Fig. 6 E is shown for removing the process of bonding sheet 1B (sometimes after by multiple semiconductor chip CP sealing sealing Referred to as bonding sheet stripping process) diagrammatic cross-section that is illustrated.
In the present embodiment, by bonding sheet 1B (base in the state of will solidify adhesive layer 14A and remain on seal 3B Material 11 and adhesive phase 13) it is removed from seal 3B.Bonding sheet 1B adhesive phase 13 and can solidify adhesive layer 14A's Interface removing.
Connection terminal exposes process
The process that Fig. 7 A shows the surface for making the connection terminal W3 of semiconductor chip CP expose seal 3B (connects Connecting terminal exposes process) diagrammatic cross-section that is illustrated.
In the present embodiment, by the close of the seal 3B of the circuit face W1 of cladding semiconductor chip CP, connection terminal W3 Part or all of removing for sealing resin layer, exposes connection terminal W3.The connection terminal of present embodiment exposes process can be with Implement in the same manner as first embodiment.
Wiring layer formation process again
Fig. 7 B shows process (the wiring layer shape again for the wiring layer again 4 being electrically connected for formation with semiconductor chip CP At process) diagrammatic cross-section that is illustrated.
In the present embodiment, it is electrically connected wiring layer 4 with the connection terminal W3 exposed on the surface seal 3B.This reality The formation process of wiring layer again for applying mode can be implemented in the same manner as first embodiment.
The wiring layer again 4 of present embodiment also has the external electrode pads 41 for connecting external terminal electrode.At this In embodiment, external electrode pads 41 also are formd at multiple positions.In the present embodiment, it also forms and is fanned out to (Fan- Out) the external electrode pads 41 other than the region of semiconductor chip CP.
External terminal electrode connects process
Fig. 7 C shows that (external terminal electrode connects for making external terminal electrode 5 with wiring layer 4 is electrically connected again process Connect process) diagrammatic cross-section that is illustrated.The external terminal electrode connection process of present embodiment can be with the first embodiment party Formula is similarly implemented.
Singualtion operation
Fig. 7 D shows process (the monolithic chemical industry of the seal 3B singualtion for that will be connected with external terminal electrode 5 Sequence) diagrammatic cross-section that is illustrated.
The method of seal 3B singualtion is not particularly limited, it can be cited for example that side identical with the 1st embodiment Method.Seal 3B can be pasted on the bonding sheets such as cutting sheet by the process of seal 3B singualtion to implement.
In the present embodiment, in a manner of comprising multiple semiconductor chip CP by seal 3B singualtion, thus Manufacture includes the semiconductor packages 100C of multiple semiconductor chip CP.In semiconductor packages 100C, solidification adhesive layer 14A is set It is placed in the chip back W2 of semiconductor chip CP.That is, being set to the adhesive layer 14 of the chip back W2 of semiconductor chip CP not It is the purposes that is fixed temporarily being stripped after resin seal, but is adhered to half securely in the form of solidifying adhesive layer 14A Conductor chip CP, as semiconductor packages 100C a part and contain.
In the present embodiment, due to make external terminal electrode 5 and be fanned out to the region of (Fan-Out) semiconductor chip CP with Outer external electrode pads 41 connect, therefore semiconductor packages 100C may be used as the wafer-level packaging (FO-WLP) of fan-out-type.
Installation procedure
The manufacturing method of the semiconductor device of present embodiment preferably includes semiconductor packages 100C being installed on printing cloth The process (sometimes referred to as installation procedure) of line substrate etc..
The effect of embodiment
The manufacturing method of semiconductor device according to the present embodiment plays effect same as the first embodiment.
In addition, the manufacturing method of semiconductor device according to the present embodiment, since semiconductor chip CP is pressed from both sides across setting In chip back W2 adhesive layer 14 and be pasted on bonding sheet 1B, therefore, in the state of formerly having made laminated body It can be used, the laminated body is made of the chip entire surface lamination adhesive oxidant layer before monolithic turns to shaped like chips.
(the 5th embodiment)
The manufacturing method of the semiconductor device of present embodiment is using the manufacturing method of bonding laminated body, the adhesive layer Stack has substrate and adhesive layer, wherein the adhesive layer includes first bonding agents layer and second bonding agents layer.Above-mentioned The material of one adhesive layer and above-mentioned second bonding agents layer is mutually different.In the present embodiment, it can enumerate in above-mentioned substrate The upper bonding stacking for forming above-mentioned second bonding agents layer and foring above-mentioned first bonding agents layer on above-mentioned second bonding agents layer Body is as an example.In the present embodiment, the substrate as bonding laminated body, such as resin film can be used.
The manufacturing method of the semiconductor device of present embodiment is with the following process: rigid support body is pasted on above-mentioned The process of one adhesive layer；The process that above-mentioned substrate is removed from above-mentioned second bonding agents layer；Multiple semiconductor elements are glued The process for being affixed on above-mentioned second bonding agents layer；So that above-mentioned first bonding agents layer is solidified to form the first solidification adhesive layer and makes The process that above-mentioned second bonding agents layer is solidified to form the second solidification adhesive layer；The shape by multiple above-mentioned semiconductor element encapsulations At the process of the seal with sealing resin layer；The process for forming the wiring layer again being electrically connected with above-mentioned semiconductor element；Make The process that external terminal electrode is electrically connected with above-mentioned wiring layer again；And remove above-mentioned first solidification adhesive layer and above-mentioned hard Supporter is without solidifying the process that adhesive layer is removed from above-mentioned seal for above-mentioned second, wherein by multiple above-mentioned half When conductor element is pasted on above-mentioned bonding laminated body, by above-mentioned semiconductor element and circuit face opposite side with connection terminal The element back side pasted towards above-mentioned adhesive layer, above-mentioned semiconductor element encapsulation is being formd into above-mentioned seal Afterwards, part or all for removing the above-mentioned sealing resin layer in cladding foregoing circuit face, exposes above-mentioned connection terminal, makes above-mentioned Wiring layer is electrically connected with the above-mentioned connection terminal of exposing again.
By above-mentioned substrate from the process removed on second bonding agents layer, it is preferably Nian Jie with above-mentioned second in above-mentioned substrate It removes the interface of oxidant layer.
It is preferred that in the same process solidifying first bonding agents layer and second bonding agents layer, more preferably makes it while solidifying.
(bonding laminated body)
In the manufacturing method of the semiconductor device of present embodiment, using having substrate 11,15 and of first bonding agents layer The bonding laminated body 1C of second bonding agents layer 16 (referring to Fig. 8 A).Be bonded laminated body 1C substrate 11 and first bonding agents layer 15 it Between include second bonding agents layer 16.
(substrate)
Substrate 11 is not particularly limited, and it is, for example, possible to use substrates identical with the substrate illustrated in the 1st embodiment. In the present embodiment, substrate 11 preferably has material flexible.In the present embodiment, enumerating uses resin film as base It is sub in case where material 11.
(adhesive layer)
First bonding agents layer 15 and second bonding agents layer 16, which are preferably comprised, receives energy from outside and cured curing type is viscous Connect agent.As the energy being externally supplied, can enumerate for example: ultraviolet light, electron beam and heat etc..First bonding agents layer 15 and Two adhesive layers 16 are preferably each independently containing at least any in ultraviolet hardening bonding agent and heat curable adhesive It is a kind of.In the present embodiment, as containing in the bonding agent and second bonding agents layer 16 contained in first bonding agents layer 15 Bonding agent, each independently in first bonding agents composition preferably as escribed above and above-mentioned second bonding agents composition At least any one adhesive layer composition.In addition, first bonding agents layer 15 and second bonding agents layer 16 are preferably ultraviolet curing Type adhesive layer.It is excellent in the case where first bonding agents layer 15 and second bonding agents layer 16 are ultraviolet hardening adhesive layer Rigid support body 17 is selected to be formed by the material that can penetrate ultraviolet light.
(manufacturing method of semiconductor device)
Fig. 8 (Fig. 8 A~Fig. 8 E) and Fig. 9 (Fig. 9 A~Fig. 9 E) is the manufacturer for showing the semiconductor device of present embodiment The figure of one example of method.
Bonding laminated body 1C is used in the manufacturing method of the semiconductor device of present embodiment.
Rigid support body adhering processes
Fig. 8 A shows that (rigid support body is viscous for process that rigid support body 17 is pasted on to first bonding agents layer 15 Patch process) diagrammatic cross-section that is illustrated.
The material of rigid support body 17 can be considered mechanical strength and heat resistance etc. and be suitably determined.Rigid support body 17 Material can be enumerated for example: metal material, non-metal inorganic material, resin material and composite material etc..It, can as metal material To enumerate such as SUS.As non-metal inorganic material, can enumerate such as glass and silicon wafer.As resin material, It can enumerate for example: epoxy resin, ABS, acrylic resin, engineering plastics, superengineering plastics, polyimides and polyamide acyl Imines etc..As composite material, it can be cited for example that glass epoxy resin etc..In these materials, preferably SUS, glass And silicon wafer etc..It as engineering plastics, can enumerate: nylon, polycarbonate (PC) and polyethylene terephthalate (PET) Deng.It as superengineering plastics, can enumerate: polyphenylene sulfide (PPS), polyether sulfone (PES) and polyether-ether-ketone (PEEK) etc..
The thickness of rigid support body 17 can be considered mechanical strength and operability etc. and be suitably determined.Rigid support body 17 Thickness is, for example, 100 μm or more and 50mm or less.
In the present embodiment, since second bonding agents layer 16 and first bonding agents layer 15 are pasted on rigid support body 17, Therefore the operability etc. of the semiconductor chip CP in the technique of manufacturing method for semiconductor device can be improved.
Substrate stripping process
Fig. 8 B is shown for removing substrate 11 from bonding laminated body 1C after rigid support body adhering processes The diagrammatic cross-section that is illustrated of process (substrate stripping process).
In the manufacturing method of present embodiment, bonding laminated body 1C can be on the boundary of second bonding agents layer 16 and substrate 11 It is removed at face.
Semiconductor chip adhering processes
Fig. 8 C shows the second bonding agents exposed for being pasted on semiconductor chip CP by peeling base 11 The diagrammatic cross-section that the process (semiconductor chip adhering processes) of layer 16 is illustrated.
Semiconductor chip CP used in present embodiment has circuit face W1 and conduct provided with connection terminal W3 With the chip back W2 at the element back side of circuit face W1 opposite side.
In the present embodiment, as shown in Figure 8 C, multiple semiconductor chip CP is made to be pasted on second bonding agents layer 16.Viscous When pasting semiconductor chip CP, it can paste one by one, multiple semiconductor chip CP can also be pasted simultaneously.
Adhesive layer curing process
Fig. 8 D is shown for making first bonding agents layer 15 be solidified to form the first solidification adhesive layer 15A and making What the process (adhesive layer curing process) that two adhesive layers 16 are solidified to form the second solidification adhesive layer 16A was illustrated cuts open Face schematic diagram.By solidifying second bonding agents layer 16, semiconductor chip CP is more firmly adhered to the second solidification adhesive layer 16A can inhibit the movement of the semiconductor chip CP in subsequent resin seal process.
Make first bonding agents layer 15 and the cured method of second bonding agents layer 16 preferred basis in a same manner as in the first embodiment Bonding agent type contained by first bonding agents layer 15 and second bonding agents layer 16 and suitably select.In first bonding agents layer 15 and In the case that second bonding agents layer 16 is made of the bonding agent of identical curing mode, preferably make first bonding agents layer 15 and second viscous It connects oxidant layer 16 while solidifying.
Solidifying adhesive layer 16A as the protective film for being used to protect chip back in use, the protective film is excellent for second Choosing is coloured, more preferably black.It is therefore preferable that cooperating above-mentioned colorant in second bonding agents layer 16.
Sealing process
Fig. 8 E show for formation first solidify adhesive layer 15A and second solidification adhesive layer 16A after to more The diagrammatic cross-section that the process (sealing process) that a semiconductor chip CP is sealed is illustrated.
In the present embodiment, sealing is formed and coating the circuit face side W1 of semiconductor chip CP with containment member 30 Body 3.Containment member 30 is also filled between multiple semiconductor chip CP.In the present embodiment, due to rigid support body 17 It is pasted on seal 3, therefore, the rigidity of seal 3 improves, and can inhibit the warpage of the semiconductor packages generated after resin seal. It is not particularly limited using the method that containment member 30 seals multiple semiconductor chip CP, it can be cited for example that the 1st embodiment The method etc. of middle explanation.As the material of containment member 30, it can be cited for example that the material illustrated in the 1st embodiment, combination Object etc..
In the present embodiment, it is possible to implement the curing process of the addition illustrated in the 1st embodiment.It needs to illustrate It is that can not also implement additional curing process and solidify containment member 30 sufficiently by the heating in sealing process.
Connection terminal exposes process
Fig. 9 A shows the process for exposing the connection terminal W3 of semiconductor chip CP on the surface of seal 3 The diagrammatic cross-section that (connection terminal exposing process) is illustrated.
In the present embodiment, the sealing of the circuit face W1 of semiconductor chip CP, the seal 3 of connection terminal W3 will be coated Part or all of removing of resin layer, exposes connection terminal W3.The connection terminal of present embodiment exposes process can be with First embodiment is similarly implemented.
Wiring layer formation process again
Fig. 9 B shows process (the wiring layer shape again for the wiring layer again 4 being electrically connected for formation with semiconductor chip CP At process) diagrammatic cross-section that is illustrated.
In the present embodiment, it is electrically connected wiring layer 4 with the connection terminal W3 exposed on 3 surface of seal.This reality The formation process of wiring layer again for applying mode can be implemented in the same manner as first embodiment.
The wiring layer again 4 of present embodiment also has the external electrode pads 41 for connecting external terminal electrode.At this In embodiment, external electrode pads 41 also are formd at multiple positions.In the present embodiment, it also forms and is fanned out to (Fan- Out) the external electrode pads 41 other than the region of semiconductor chip CP.
External terminal electrode connects process
Fig. 9 C shows that (external terminal electrode connects for making external terminal electrode 5 with wiring layer 4 is electrically connected again process Connect process) diagrammatic cross-section that is illustrated.The external terminal electrode connection process of present embodiment can be with the first embodiment party Formula is similarly implemented.
Removal step
Fig. 9 D shows the section signal being illustrated for the process (removal step) for removing rigid support body 17 Figure.In the present embodiment, further the first solidification adhesive layer 15A is also removed, reveals the second solidification adhesive layer 16A Out.Adhesive layer 16A can be solidified as being used to protect the protective film of chip back to use for second.Second as protective film The surface for solidifying adhesive layer 16A can be printed by implementations such as laser labellings.
Singualtion operation
Fig. 9 E shows the process (singualtion operation) of 3 singualtion of seal for that will be connected with external terminal electrode The diagrammatic cross-section being illustrated.
The method of 3 singualtion of seal is not particularly limited, it can be cited for example that side identical with the 1st embodiment Method.Seal 3 can be pasted on the bonding sheets such as cutting sheet by the process of 3 singualtion of seal to implement.
In the present embodiment, in a manner of comprising multiple semiconductor chip CP by 3 singualtion of seal, to make Make the semiconductor packages 100 comprising multiple semiconductor chip CP.In semiconductor packages 100, the second solidification adhesive layer 16A is set It is placed in the chip back W2 of semiconductor chip CP.That is, being set to the second bonding agents layer of the chip back W2 of semiconductor chip CP 16 be not stripped after resin seal be fixed temporarily purposes, by second solidification adhesive layer 16A in the form of securely Be adhered to semiconductor chip CP, as semiconductor packages 100 a part and contain.
In the present embodiment, due to make external terminal electrode 5 and be fanned out to the region of (Fan-Out) semiconductor chip CP with Outer external electrode pads 41 connect, therefore semiconductor packages 100C may be used as the wafer-level packaging (FO-WLP) of fan-out-type.
Installation procedure
The manufacturing method of the semiconductor device of present embodiment preferably includes semiconductor packages 100 being installed on printed wiring The process (sometimes referred to as installation procedure) of substrate etc..
The effect of embodiment
The manufacturing method of semiconductor device according to the present embodiment, since rigid support body 17 is pasted on first bonding agents Layer 15, it is thus ensured that the cementability of rigid support body 17 and first bonding agents layer 15, semiconductor chip when being able to suppress sealing The positional shift of CP.Furthermore it is possible to which solidifying protective film of the adhesive layer 16A as final residue in chip back for second makes With.Have the function of to inhibit the first of positional shift and defencive function to solidify adhesive layer due to that can be formed in the same process The solidification adhesive layer 16A of 15A and second, therefore can simplify manufacturing process.
(deformation of embodiment)
The present invention is not limited to above-mentioned embodiments.The present invention includes will in the range that can be realized the object of the invention Above embodiment has carried out deformed mode etc..
For example, the circuit etc. in semiconductor wafer, semiconductor chip is not limited to arrangement, the shape etc. of diagram.Partly lead The mode illustrated in above embodiment is also not limited to the connection structure of external terminal electrode etc. in body encapsulation.Above-mentioned Embodiment in, the mode for enumerating manufacture FO-WLP type semiconductor packages is illustrated as an example, but the present invention can also In a manner of the other semiconductor packages such as WLP for being suitable for manufacturing fan-in type.
In the above-described embodiment, it enumerates making seal singualtion in a manner of comprising multiple semiconductor chips The mode for making the semiconductor packages comprising multiple semiconductor chips is illustrated as an example, but the present invention is not limited to this The mode of sample.For example, singualtion operation is also possible to separately include the semiconductors such as 1 semiconductor chip with each semiconductor packages The mode of element is by the mode of seal singualtion.In addition, for example, singualtion operation can also be with each semiconductor packages packet Mode containing semiconductor elements such as 3 or more semiconductor chips is by the mode of seal singualtion.
In the above-described embodiment, the mode that semiconductor element is pasted on substrate across the adhesive layer of stacking by folder is enumerated It is illustrated as an example, but the stacking number of adhesive layer is not limited to 2 layers, or 3 layers or more.
In the above-described embodiment, it enumerates adhesive layer and is laminated in made of substrate bonding laminated body and carry out as an example Illustrate, but the present invention is not limited to such modes.Alternatively, such as it can be adhesive layer and be laminated in half The mode of the semiconductor elements such as conductor chip.In this case, semiconductor element can be pressed from both sides across the viscous of the element back side It connects oxidant layer and is pasted on substrate, can also press from both sides and be pasted on viscous across the adhesive layer at the element back side and the adhesive phase of bonding sheet Close piece.The stacking number for being laminated in the adhesive layer of semiconductor element is not limited to 2 layers, or 3 layers or more.

Claims (15)

1. a kind of manufacturing method of semiconductor device, this method are with the following process:
Press from both sides the process that substrate and semiconductor element are pasted across adhesive layer；
The adhesive layer is set to be solidified to form the process for solidifying adhesive layer；
The process that multiple semiconductor element encapsulations are formed into the seal with sealing resin layer；
The substrate is removed from the seal without by the work for solidifying adhesive layer and being removed from the seal Sequence；
The process for forming the wiring layer again being electrically connected with the semiconductor element；And
The process for being electrically connected external terminal electrode with the wiring layer again.
2. the manufacturing method of semiconductor device according to claim 1, wherein
Multiple semiconductor elements are pasted on the described viscous of the bonding laminated body with the substrate and the adhesive layer Connect oxidant layer.
3. the manufacturing method of semiconductor device according to claim 2, wherein
The adhesive layer is directly laminated in the substrate.
4. the manufacturing method of semiconductor device according to claim 2, wherein
It include adhesive phase between the adhesive layer and the substrate.
5. the manufacturing method of semiconductor device according to claim 4, wherein
It is not shell the solidification adhesive layer from the seal by the process that the substrate is removed from the seal From and described adhesive layer and it is described solidify adhesive layer interface remove process.
6. the manufacturing method of semiconductor device according to claim 5, wherein
Described adhesive layer is thermal expansivity adhesive phase.
7. the manufacturing method of semiconductor device according to claim 1, wherein
The semiconductor element has the adhesive layer.
8. the manufacturing method of semiconductor device according to claim 7, wherein
The adhesive layer of the semiconductor element fits in the described viscous of the bonding sheet with the substrate and adhesive phase Mixture layer.
9. the manufacturing method of semiconductor device according to claim 8, wherein
It is not shell the solidification adhesive layer from the seal by the process that the substrate is removed from the seal From and described adhesive layer and it is described solidify adhesive layer interface remove process.
10. the manufacturing method of semiconductor device according to claim 2, wherein
The adhesive layer includes at least first bonding agents layer and second bonding agents layer, also,
The material of the first bonding agents layer and the second bonding agents layer is different.
11. the manufacturing method of semiconductor device according to claim 10, wherein
Make the adhesive layer be solidified to form the process for solidifying adhesive layer be make the first bonding agents layer solidify and Form the first process for solidifying adhesive layer and the second bonding agents layer being made to be solidified to form the second solidification adhesive layer.
12. the manufacturing method of semiconductor device according to claim 2, wherein
When folder pastes multiple semiconductor elements and the substrate across the adhesive layer, by the semiconductor element It is pasted with the element back side of the circuit face opposite side with connection terminal towards the adhesive layer,
After multiple semiconductor element encapsulations are formd the seal, the sealing of the circuit face will be coated Part or all of removing of resin layer, exposes the connection terminal,
It is electrically connected the wiring layer again with the connection terminal of exposing.
13. the manufacturing method of semiconductor device according to claim 2, wherein
When folder pastes multiple semiconductor elements and the substrate across the adhesive layer, by the semiconductor element The circuit face with connection terminal pasted towards the adhesive layer,
After removing the substrate from the seal, the one of the solidification adhesive layer of the circuit face will be coated It partly or entirely removes, exposes the connection terminal,
It is electrically connected the wiring layer again with the connection terminal of exposing.
14. the manufacturing method of semiconductor device described according to claim 1~any one of 13, wherein
Before making the adhesive layer be solidified to form the process for solidifying adhesive layer, reinforcing frame is pasted on described viscous Connect oxidant layer.
15. a kind of bonding laminated body, has: substrate and the adhesive layer containing adhesive composite,
Wherein, the adhesive composite contains binder polymer ingredient and curability composition,
The bonding laminated body is used for the manufacturing process of semiconductor device with the following process:
Multiple semiconductor elements are pasted on to the process of the adhesive layer of the bonding laminated body；
The adhesive layer is set to be solidified to form the process for solidifying adhesive layer；
The process that multiple semiconductor element encapsulations are formed into seal；
The substrate is removed from the seal without by the work for solidifying adhesive layer and being removed from the seal Sequence；
The process for forming the wiring layer again being electrically connected with the semiconductor element；And
The process for being electrically connected external terminal electrode with the wiring layer again.
CN201810862224.1A 2017-08-04 2018-08-01 The manufacturing method and bonding laminated body of semiconductor device Pending CN109390240A (en)

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