CN109390223A - The forming method of impurity diffusion agent composition and impurity diffusion layer - Google Patents
The forming method of impurity diffusion agent composition and impurity diffusion layer Download PDFInfo
- Publication number
- CN109390223A CN109390223A CN201810885362.1A CN201810885362A CN109390223A CN 109390223 A CN109390223 A CN 109390223A CN 201810885362 A CN201810885362 A CN 201810885362A CN 109390223 A CN109390223 A CN 109390223A
- Authority
- CN
- China
- Prior art keywords
- impurity diffusion
- agent composition
- boron compound
- boron
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 160
- 239000012535 impurity Substances 0.000 title claims abstract description 96
- 239000000203 mixture Substances 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 38
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 81
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052796 boron Inorganic materials 0.000 claims abstract description 53
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 42
- 150000001875 compounds Chemical class 0.000 claims abstract description 36
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 125000000962 organic group Chemical group 0.000 claims description 10
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 22
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- -1 boronic acid ester Chemical class 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 15
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 15
- 230000005764 inhibitory process Effects 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Natural products CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 11
- 235000019441 ethanol Nutrition 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 5
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012046 mixed solvent Substances 0.000 description 4
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- NKKWYENCEXCGLD-UHFFFAOYSA-N 4,4-dimethylpentane-1,2-diol Chemical compound CC(C)(C)CC(O)CO NKKWYENCEXCGLD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical class COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 125000001316 cycloalkyl alkyl group Chemical group 0.000 description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- 125000004850 cyclobutylmethyl group Chemical group C1(CCC1)C* 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000004851 cyclopentylmethyl group Chemical group C1(CCCC1)C* 0.000 description 2
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 150000002334 glycols Chemical group 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 2
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 2
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 2
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- HQSLKNLISLWZQH-UHFFFAOYSA-N 1-(2-propoxyethoxy)propane Chemical compound CCCOCCOCCC HQSLKNLISLWZQH-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- UHOPWFKONJYLCF-UHFFFAOYSA-N 2-(2-sulfanylethyl)isoindole-1,3-dione Chemical compound C1=CC=C2C(=O)N(CCS)C(=O)C2=C1 UHOPWFKONJYLCF-UHFFFAOYSA-N 0.000 description 1
- MDNDJMCSXOXBFZ-UHFFFAOYSA-N 2-(5,5-dimethyl-1,3,2-dioxaborinan-2-yl)-5,5-dimethyl-1,3,2-dioxaborinane Chemical compound O1CC(C)(C)COB1B1OCC(C)(C)CO1 MDNDJMCSXOXBFZ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical group COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- YSIKHBWUBSFBRZ-UHFFFAOYSA-N 3-methoxypropanoic acid Chemical compound COCCC(O)=O YSIKHBWUBSFBRZ-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZBYZWLAJTHVJKH-UHFFFAOYSA-N BO.BO Chemical compound BO.BO ZBYZWLAJTHVJKH-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- IJMWOMHMDSDKGK-UHFFFAOYSA-N Isopropyl propionate Chemical compound CCC(=O)OC(C)C IJMWOMHMDSDKGK-UHFFFAOYSA-N 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- FOPYSAYPLMEIMI-UHFFFAOYSA-N [O].C[Si] Chemical compound [O].C[Si] FOPYSAYPLMEIMI-UHFFFAOYSA-N 0.000 description 1
- GTXJFCIRQNFSFP-UHFFFAOYSA-N acetic acid;1-propoxypropan-2-ol Chemical class CC(O)=O.CCCOCC(C)O GTXJFCIRQNFSFP-UHFFFAOYSA-N 0.000 description 1
- OZRRFAZLUBSCFL-UHFFFAOYSA-N acetic acid;2-propoxyethanol Chemical class CC(O)=O.CCCOCCO OZRRFAZLUBSCFL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- GHXRKGHKMRZBJH-UHFFFAOYSA-N boric acid Chemical compound OB(O)O.OB(O)O GHXRKGHKMRZBJH-UHFFFAOYSA-N 0.000 description 1
- UYANAUSDHIFLFQ-UHFFFAOYSA-N borinic acid Chemical compound OB UYANAUSDHIFLFQ-UHFFFAOYSA-N 0.000 description 1
- ZADPBFCGQRWHPN-UHFFFAOYSA-N boronic acid Chemical compound OBO ZADPBFCGQRWHPN-UHFFFAOYSA-N 0.000 description 1
- CKAAOCRYHRAMEC-UHFFFAOYSA-N butanoic acid;propane-1,2-diol Chemical class CC(O)CO.CCCC(O)=O CKAAOCRYHRAMEC-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- HPXRVTGHNJAIIH-PTQBSOBMSA-N cyclohexanol Chemical class O[13CH]1CCCCC1 HPXRVTGHNJAIIH-PTQBSOBMSA-N 0.000 description 1
- 150000001983 dialkylethers Chemical class 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940035423 ethyl ether Drugs 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- GQKZBCPTCWJTAS-UHFFFAOYSA-N methoxymethylbenzene Chemical compound COCC1=CC=CC=C1 GQKZBCPTCWJTAS-UHFFFAOYSA-N 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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Abstract
The present invention relates to the forming methods of impurity diffusion agent composition and impurity diffusion layer.The issue of the present invention is to provide the impurity diffusion agent compositions for the application type that boron can be made to spread well into semiconductor substrate while the external diffusion for inhibiting boron compound and the method that impurity diffusion layer is formed on the surface of silicon substrate using the impurity diffusion agent composition.Solution of the invention are as follows: in the impurity diffusion agent composition comprising (A) boron compound and the application type of (S) solvent, use the boron compound with specific part-structure as (A) boron compound, and is used together (B) silicone compounds with (A) boron compound.As (B) silicone compounds, preferably silsesquioxane.
Description
Technical field
The present invention relates to the impurity diffusion agent composition comprising boron compound and use the miscellaneous of the impurity diffusion agent composition
The forming method of matter diffusion layer.
Background technique
When manufacturing various semiconductor elements, solar battery, the semiconductor lining for being diffused with impurity diffusion component can be used
Bottom.As the method for spreading impurity diffusion component into semiconductor substrates such as silicon substrates, for example, frequently with make impurity diffusion at
Divide gasification to make the method that it spreads into semiconductor substrate.
Specifically, configuring semiconductor substrate in diffusion furnace at spaced intervals, make the impurity diffusion component to have gasified
Throughout the periphery of semiconductor substrate, to carry out diffusion of the impurity diffusion component to semiconductor substrate.
When forming the impurity diffusion layer that p-type conductivity is presented on a silicon substrate, it is often used the impurity diffusion component comprising boron.
As the method for spreading the impurity diffusion component comprising boron into semiconductor substrate, pyrolysismethod, opposed NB method, doping can be enumerated
Agent agent method and rubbing method etc..In these, never needs to expensive device, can be carried out the side that uniformly diffusion, production are excellent
Face considers, it is preferred to use rubbing method.Especially, frequently with the method for being coated with the coating fluid containing boron using spin coater etc..
As the diffusing agent composition of the application type containing boron, such as propose comprising boron compound, containing the height of hydroxyl
The diffusing agent composition of molecular compound and solvent, the boron compound are selected from by boronic acid ester (boronic
Ester), the group of borinic acid (borinic acid) and borinic acid ester (borinic ester) composition is (referring to special
Sharp document 1.).By using the diffusing agent composition, boron can be made to spread well into semiconductor substrate.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2016-195203 bulletin
Summary of the invention
Problems to be solved by the invention
However, recorded in using patent document 1 diffusing agent composition when, although boron can be made good into semiconductor substrate
It spreads well, but then, due to the influence of external diffusion (external diffusion (out diffusion)), causes to serve as a contrast in semiconductor
The diffusion of boron also occurs for the position that should not be diffused with boron in bottom.
The present invention be in view of above-mentioned project and make, and it is an object of the present invention to provide can be in the external diffusion for inhibiting boron compound
While spread boron well into semiconductor substrate application type impurity diffusion agent composition and use the impurity diffusion
The method that agent composition forms impurity diffusion layer on the surface of silicon substrate.
Means for solving the problems
The inventors of the present application found that by the impurity diffusion agent comprising (A) boron compound He the application type of (S) solvent
In composition, use the boron compound with specific part-structure as (A) boron compound, and with (A) boron compound one
With (B) silicone compounds are used, above-mentioned project can solve, so as to complete the present invention.Specifically, the present invention provide with
Under scheme.
1st mode of the invention is a kind of impurity diffusion agent composition, contains (A) boron compound, (B) silicone compound
Object and (S) solvent,
(A) part-structure that there is boron compound following formula to indicate.
[chemical formula 1]
(in above formula, * is the end for being bonded to the chemical bond of oxygen atom.)
2nd mode of the invention is a kind of forming method of impurity diffusion layer, and the forming method includes the following steps:
The impurity diffusion agent composition that is related to of the 1st mode is coated on an interarea of silicon substrate and forms the step of coated film
Suddenly；With
The step of spreading the boron of (A) boron compound for including in impurity diffusion agent composition into silicon substrate.
The effect of invention
Through the invention, it is possible to provide boron can be kept good into semiconductor substrate while the external diffusion for inhibiting boron compound
The impurity diffusion agent composition and use impurity diffusion agent composition shape on the surface of silicon substrate of the application type spread well
At the method for impurity diffusion layer.
Specific embodiment
" impurity diffusion agent composition "
Impurity diffusion agent composition include with (A) boron compound of specific part-structure, (B) silicone compounds and
(S) solvent.
Hereinafter, the essential component or optional member that may include to impurity diffusion agent composition are illustrated.
< (A) boron compound >
Impurity diffusion agent composition includes (A) boron compound as impurity diffusion component.
As (A) boron compound, the compound of the part-structure indicated with following formula can be used.
[chemical formula 2]
(in above formula, * is the end for being bonded to the chemical bond of oxygen atom.)
Impurity diffusion agent composition can be combined comprising (A) boron compound of more than two kinds.
When above-mentioned (A) boron compound and aftermentioned (B) silicone compounds to be applied in combination, generate following such
Phenomenon: (A) boron compound is spread into silicon substrate well, in contrast, from the painting for using impurity diffusion agent composition to be formed
The external diffusion of (A) boron compound that cloth film occurs is reduced.
The point is accounted for, as one of its reason, thus it is speculated that when carrying out (A) boron compound by being heated to high temperature
When diffusion, in coated film on a silicon substrate, the interarea not contacted with silicon substrate is more even closer than the interarea contacted with silicon substrate
Change.
Though its reason is uncertain, supposition may be following reasons: due to the intermolecular interaction of (A) boron compound,
Or the interaction between (A) boron compound and (B) silicone compounds, so that formed using impurity diffusion agent composition
The close mode of height occurs for the interarea of coated film not contacted with silicon substrate.
In addition, for (A) boron compound, by having the above-mentioned part skeleton not comprising organic group, thus
Compared with other boron compounds in two end groups with organic group, the ratio of organic principle is lower, and exists even if being added
Heat is also difficult to the tendency to distil.Therefore, if using the impurity diffusion agent comprising (A) boron compound with above-mentioned part-structure
Composition, then (A) boron compound is readily retained in coated film when heated, as a result, is easy in the outside of inhibition (A) boron compound
Boron is spread well into semiconductor substrate while diffusion.
In addition, (A) boron compound is due to comprising B-B key, thus with the other compositions that include in impurity diffusion agent composition
It compares, specific gravity is larger.Moreover, coating from impurity diffusion agent composition to semiconductor substrate usually to be formed by coated film as lead
Upper side, the mode that semiconductor substrate is vertical lower side of hanging down carry out.Therefore, compared with the other compositions in coated film, specific gravity
Big (A) boron compound is easy to be deposited near the interface of coated film and semiconductor substrate when forming coated film.Think its knot
Fruit is that following concentration gradients are formd in coated film: closer to semiconductor-substrate side, the concentration of (A) boron compound is higher.
If forming such concentration gradient, on the surface of coated film not contacted with semiconductor substrate, (A) boron compound
Amount it is few, therefore, the external diffusion of (A) boron compound is suppressed.On the other hand, attached at the interface of coated film and semiconductor substrate
Closely, the amount of (A) boron compound in coated film is more, and therefore, diffusion of (A) boron compound to semiconductor substrate carries out well.
Due to being described above etc., it is believed that closed by the way that (A) boronation with above-mentioned part-structure is applied in combination
Object and (B) silicone compounds, so as to make boron into semiconductor substrate while the external diffusion of inhibition (A) boron compound
It spreads well.
As (A) boron compound, from being easy to get or synthesizing, from the aspect of diffusivity is good, preferably following formula (a1) or
(a2) compound indicated.
[chemical formula 3]
(in formula (a1), R1And R2It is each independently hydrogen atom or carbon atom number is 1 or more and 61 valence organic groups below
, in formula (a2), R3It is 1 or more and 6 divalent organic groups below for carbon atom number.)
About as the R in formula (a1)1And R2Carbon atom number be 1 or more and 6 organic groups below concrete example, can
Enumerate methyl, ethyl, n-propyl, isopropyl, normal-butyl, isobutyl group, sec-butyl, tert-butyl, n-pentyl, isopentyl, neopentyl,
The chain-like alkyls such as pentane -3- base, sec-amyl, tertiary pentyl and n-hexyl；Cyclopropyl, cyclobutyl, cyclopenta and cyclohexyl etc.
Naphthenic base；The cycloalkyl-alkyls such as cyclobutylmethyl and cyclopentyl-methyl；Phenyl.
R1And R2It can be identical group, be also possible to different groups, preferably identical group.
About as the R in formula (a2)3Carbon atom number be 1 or more and 6 divalent alkyls below concrete example, can enumerate
Ethane -1,2- diyl, propane -1,3- diyl, 2- methylpropane -1,3- diyl, 2,3- dimethylbutane -2,3- diyl, ring fourth
Alkane -1,2- diyl and adjacent phenylene.
As the preferred concrete example of (A) boron compound, following compound A1~A8 can be enumerated.Following compounds
In, preferably A1, A2 and A3, more preferable A1.
[chemical formula 4]
Impurity diffusion agent composition can include other than (A) boron compound in the range of not interfering project of the invention
Other boron compounds are as impurity diffusion component.As the concrete example of other boron compounds, a borinic acid can be enumerated
(boronic acid), boric acid (boric acid), boric anhydride etc..
For the gross mass of (A) boron compound and other boron compounds, other in impurity diffusion agent composition
The content of boron compound be preferably 30 mass % hereinafter, more preferably 20 mass % hereinafter, further preferably 10 mass % with
Under, particularly preferably 5 mass % are hereinafter, most preferably 0 mass %.
The content of (A) boron compound in impurity diffusion agent composition does not have in the range of not interfering the purpose of the present invention
Especially limitation.The content of (A) boron compound in impurity diffusion agent composition can be suitably changed according to coating method etc..It is typical
Ground, for the gross mass of impurity diffusion agent composition, the content of (A) boron compound is preferably 1 mass % or more and 50
Quality % is hereinafter, more preferably 2 mass % or more and 30 mass % or less.By using (A) boronation of the amount in above range
Object is closed, is easy to spread (A) boron compound well into silicon substrate.
< (B) silicone compounds >
As described above, impurity diffusion agent composition contains the silicone compounds comprising siloxanes key.As siliconization
Object is closed, is not particularly limited, it can be without particular limitation using existing known various silicone compounds.
As the siloxane backbone in (B) silicone compounds, such as annular siloxane skeleton, polysiloxanes bone can be enumerated
Frame (such as straight-chain or the organo-silicon compound (silicone) (straight-chain or branched polysiloxanes) of branched, cage modle, ladder
(ladder) polysilsesquioxane etc. of type) etc..
(B) silicone compounds be also possible to side chain, end etc. have the unsaturated alkyls such as vinyl, allyl,
The so-called modified silicone com of amino, epoxy group, hydroxyl etc..
As (B) silicone compounds, from the side of good diffusion and the inhibition to outside diffusion easy while that realize boron
Face consideration, preferably silsesquioxane.The structure of silsesquioxane is not particularly limited, and can be cage modle, is also possible to ladder type.
As the preferred concrete example of (B) silicone compounds, dimethyl silicone polymer, polyphenyl methyl silicon oxygen can be enumerated
The polysilsesquioxane of ladder type etc. that organo-silicon compound, the following formula of the straight-chains such as alkane, polydiphenylsiloxane indicate.
[chemical formula 5]
(in above formula, R4It is each independently hydrogen atom or carbon atom number is 1 or more and 61 valence organic groups below, n
For the repeat number of the unit in bracket.)
In above formula, as R4, preferably carbon atom number is 1 or more and 6 organic groups below.As carbon atom number be 1 with
Upper and 6 organic groups below concrete examples, can enumerate methyl, ethyl, n-propyl, isopropyl, normal-butyl, isobutyl group, Zhong Ding
The chain-like alkyls such as base, tert-butyl, n-pentyl, isopentyl, neopentyl, pentane -3- base, sec-amyl, tertiary pentyl and n-hexyl；
The naphthenic base such as cyclopropyl, cyclobutyl, cyclopenta and cyclohexyl；The cycloalkyl-alkyls such as cyclobutylmethyl and cyclopentyl-methyl；Benzene
Base.
In these groups, preferably methyl and ethyl, more preferable ethyl.
(B) weight average molecular weight by weight of polystyrene of silicone compounds is not particularly limited, typically, preferably
It is 100 or more and 100,000 or less.
The content of (B) silicone compounds in impurity diffusion agent composition is not in the range of interfering the purpose of the present invention
It is not particularly limited.The content of (B) silicone compounds in impurity diffusion agent composition can suitably become according to coating method etc.
More.Typically, for the gross mass of impurity diffusion agent composition, the content of (B) silicone compounds is preferably 1 matter
% or more and 50 mass % are measured hereinafter, more preferably 1 mass % or more and 40 mass % or less.By using in above range
(B) silicone compounds of amount, to be easy while realize inhibition of the boron to the good diffusion of silicon substrate and to outside diffusion.
< other compositions >
Impurity diffusion agent composition also may include the binder resins such as surfactant, acrylic resin, SiO2Particle
The various additives such as equal thixotropy conferring agents are as in addition to (A) boron compound, (B) silicone compounds and (C) polyalcohol
Other compositions.
< (S) solvent >
For the purpose etc. for adjusting coating, impurity diffusion agent composition includes (S) solvent.As (S) solvent, preferably pole
Property organic solvent.
As the concrete example of organic solvent, ethylene glycol single methyl ether, ethylene glycol monomethyl ether, ethylene glycol list propyl can be enumerated
Ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol Anaesthetie Ether, ethylene glycol dipropyl ether, propylene glycol monomethyl
Ether, propylene glycol monoethyl, propylene glycol monopropyl ether, glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl
Ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol list propyl ether, diethylene glycol monobutyl ether, diethyl two
Lists or the dialkyl ethers such as alcohol list phenyl ether, diethylene glycol diethyl ether, dipropylene glycol monomethyl ether and tripropylene glycol monomethyl ether
It is glycols；Ethylene glycol single methyl ether acetic acid esters, ethylene glycol monomethyl ether acetate, ethylene glycol monopropyl ether acetic acid esters, the third two
Alcohol monomethyl ether acetate, propylene glycol monoethyl acetic acid esters, propylene glycol monopropyl ether acetic acid esters, acetic acid 2- methoxybutyl,
Acetic acid 3- methoxybutyl, acetic acid 4- methoxybutyl, acetic acid 2- methyl -3- methoxybutyl, acetic acid 2- Ethoxybutyl, second
The ethers system esters such as sour 4- Ethoxybutyl and acetic acid 4- propoxyl group butyl ester；Metacetone, methyl iso-butyl ketone (MIBK), ethyl isobutyl base
The ketones such as ketone and cyclohexanone；Propyl propionate, isopropyl propionate, 3- methoxy methyl propionate, 3- methoxypropionate, 3- second
The propionic esters such as oxygroup ethyl propionate, 3- propoxyl group ethyl propionate, 3- methoxy propyl propyl propionate and 3- methoxy propyl isopropyl propionate
Class；The esters such as butyl acetate, isoamyl acetate, methyl acetoacetate, methyl lactate and ethyl lactate；Benzyl methyl ether, benzyl
The aromatics such as ethylether, benzene,toluene,xylene, benzyl alcohol and 2- phenoxetol；Methanol, ethyl alcohol, propyl alcohol, isopropanol,
The alcohol such as butanol, isobutanol, 2-methyl cellosolve, cellosolvo, 3- methyl -3- methoxybutanol, hexanol and cyclohexanol
Class；The ring-type esters such as gamma-butyrolacton；The glycols isopolarity such as ethylene glycol, propylene glycol, diethylene glycol and dipropylene glycol is organic molten
Agent.They can be used alone, and also can be used in combination two or more.
The content of (S) solvent in impurity diffusion agent composition can be suitably changed according to coating print method.Relative to
For the gross mass of impurity diffusion agent composition, the content of (S) solvent in impurity diffusion agent composition is for example preferably 50 matter
Measure % or more and 98 mass % or less.
" manufacturing method of impurity diffusion agent composition "
Impurity diffusion agent composition can be by the way that essential component described above or optional member to be dissolved in (S) solvent
To manufacture.The filter that desired opening diameter can also be used is filtered impurity diffusion agent composition, to remove not
It is dissolved in the impurity of (S) solvent.
" forming method of impurity diffusion layer "
Impurity diffusion layer is formed in a silicon substrate using the method included the following steps:
In the step of being coated with impurity diffusion agent composition above-mentioned on an interarea of silicon substrate and forming coated film；With
The step for spreading the boron for aforementioned (A) boron compound for including in impurity diffusion agent composition into aforementioned silicon substrate
Suddenly.
As silicon substrate, n-type silicon substrate and p-type silicon substrate be can be used.The silicon substrate for being diffused with boron is applied to by consideration
, it is preferable to use n-type silicon substrate when the solar cell device of general structure.
The method that impurity diffusion agent composition is coated on an interarea of silicon substrate is not particularly limited.
As the concrete example of coating method, spin-coating method, spraying coating method, various print processes can be enumerated.It, can as print process
Enumerate ink jet printing method, roller coating print process, silk screen print method, letterpress printing method, gravure printing method and offset printing method etc..
After coating, as needed, by removing (S) solvent in coated film, to be formed containing organic boron compound
Layer.The film thickness of layer containing organic boron compound can be in the diffusion conditions of consideration (A) boron compound, the type of (A) boron compound, diffusion
It is suitably determined on the basis of boron concentration in silicon substrate afterwards etc..The film thickness of layer containing organic boron compound is typically preferred to 10nm
Above and 5000nm is hereinafter, more preferably 50nm or more and 3000nm or less.
Next, spreading the boron of (A) boron compound for including in impurity diffusion agent composition into silicon substrate.The expansion of boron
Dissipating can usually be carried out by being heated to the silicon substrate for having the layer containing organic boron compound.
The temperature of heating silicon substrate is not particularly limited, as long as carrying out the diffusion of boron well.Heat silicon substrate
Temperature be preferably 900 DEG C or more and 1050 DEG C hereinafter, more preferably 920 DEG C or more and 1000 DEG C or less.
The time of heating silicon substrate is not particularly limited, as long as carrying out the diffusion of boron well.For heating silicon
For the time of substrate, in terms of the time for keeping above-mentioned heating temperature, preferably 1 minute or more and 120 minutes or less.
The method that silicon substrate is heated to desired temperature is not particularly limited.Typically, the heating such as electric furnace can be used
The heating of furnace progress silicon substrate.Silicon substrate is heated in addition, the methods of laser irradiation can also be used.From easy by silicon substrate
From the aspect of being evenly heated, as heating means, it is preferable to use the method for the heating furnaces such as electric furnace.
After the diffusion of boron, in general, the aqueous solution of hydrofluoric acid can be used, the layer containing organic boron compound is removed.At this time
The concentration of the aqueous solution of hydrofluoric acid is not particularly limited, as long as can remove the layer containing organic boron compound.
Boron is carried out to silicon substrate by using impurity diffusion agent composition above-mentioned, and using method described above
Diffusion while so as to spread outside inhibition, forms impurity diffusion layer obtained by boron is spread well into silicon substrate.
Embodiment
Hereinafter, further specifically describing the present invention by embodiment, but the present invention is not limited by the following examples.
[embodiment 1]
To the in the mixed solvent formed by ethyl alcohol 185g and propylene glycol monopropyl ether 555g, two boron 13.0g of tetrahydroxy is added,
It is made it dissolve while stirring.
Next, the R in addition following formula4For ladder type silsesquioxane (PPSQ-E, the small western chemical industry strain formula meeting of ethyl
Society's system) 96.0g, and then made it dissolve while stirring, obtain impurity diffusion agent composition.
[chemical formula 6]
After obtained impurity diffusion agent composition is spun on n-type silicon wafer, using heating plate, in 100 DEG C, 200 DEG C it is each
Drying in 1 minute is carried out, the layer containing organic boron compound that film thickness is 310nm is formed.
Next, in 600 DEG C, in oxygen atmosphere, the organic principle of coated film is made to carry out 30 minutes oxygen using diffusion furnace
Change and decomposes.Then, it in nitrogen atmosphere, is heated up with the speed of 7.5 DEG C/min, is carried out under conditions of 950 DEG C, 30 minutes
Diffusion.Wherein, be configured with not in the mode opposite with the layer containing organic boron compound on n-type silicon substrate have containing boronation close
It is diffused in the state of the n-type silicon substrate of the layer of object.Make to be divided into 2.5mm between 2 n-type silicon substrates.
Do not have the sheet resistance value of the n-type silicon substrate of the layer containing organic boron compound, by measuring so as to evaluate outside
The degree of diffusion.
After diffusion, 2 n-type silicon substrates are impregnated 10 minutes in the hydrofluoric acid aqueous solution that concentration is 10 mass %, by N-shaped
The layer containing organic boron compound on silicon substrate is shelled with the envelope formed on the surface of the n-type silicon substrate for evaluating external diffusion
From.
Next, the thin-layer electric of the n-type silicon substrate after measuring the diffusion for having carried out the boron from the layer containing organic boron compound
The sheet resistance value of resistance value and the n-type silicon substrate for evaluating external diffusion.The measurement of sheet resistance value using 4 terminal methods into
Row.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound be 70 Ω/
Sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion is 680 Ω/sq..
The ratio of the two is 9.7 (=680/70), it is known that by using comprising as with aforementioned specific part-structure
(A) boron compound two boron of tetrahydroxy and the ladder type silsesquioxane as (B) silicone compounds impurity diffusion agent group
Object is closed, while so as to spread outside inhibition, spreads boron well into silicon substrate.
[embodiment 2]
Two boron 13.0g of tetrahydroxy is added to the in the mixed solvent formed by ethyl alcohol 185g and propylene glycol monopropyl ether 555g,
It is made it dissolve while stirring.
Next, addition silicone oligomer (Silicone Oligomer) (X-24-9590, containing terminal epoxy groups,
Shin-Etsu Chemial Co., Ltd's system) 96.0g, and then made it dissolve while stirring, obtain impurity diffusion agent composition.
It using obtained impurity diffusion agent composition, operates similarly with example 1, carries out the diffusion of boron compound and thin
The measurement of layer resistance value.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound be 34 Ω/
Sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion is 163 Ω/sq..
The ratio of the two is 4.8 (=163/34), it is known that by using comprising as with aforementioned specific part-structure
(A) boron compound two boron of tetrahydroxy and silicone oligomer as (B) silicone compounds impurity diffusion agent combination
Object while so as to spread outside inhibition, spreads boron well into silicon substrate.
[comparative example 1]
Two boron 13.0g of tetrahydroxy is changed to boric acid 20.0g, mixed solvent 740g is changed to ethyl alcohol 860g, and will
The usage amount of PPSQ-E is changed to 106.7g from 96.0g, in addition to this, operates similarly with example 1, and obtains impurity diffusion agent
Composition.
Using obtained impurity diffusion agent composition, the film thickness of the layer containing organic boron compound is changed to from 310nm
In addition to this 300nm is operated similarly with example 1, carry out the diffusion of boron compound and the measurement of sheet resistance value.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound be 158 Ω/
Sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion is 510 Ω/sq..
The ratio of the two is 3.2 (=510/158), it is known that uses the boron comprising not having aforementioned specific part-structure
In the case where the impurity diffusion agent composition of acid and the ladder type silsesquioxane as (B) silicone compounds, it is difficult at the same it is real
The now good diffusion of the inhibition to outside diffusion and boron.
[comparative example 2]
To the in the mixed solvent formed by ethyl alcohol 210g and propylene glycol monopropyl ether 630g, add bis- (neopentyl ethylene glycol)
Two boron (bis (neopentyl glycolato) diboron) 61.5g, makes it dissolve while stirring.
Next, addition ladder type silsesquioxane (PPSQ-E, Konishi Chem Ind's system) 107.4g, Jin Eryi
Side stirring makes it dissolve on one side, obtains impurity diffusion agent composition.
Using obtained impurity diffusion agent composition, and the film thickness of the layer containing organic boron compound is changed to from 310nm
In addition to this 300nm is operated similarly with example 1, carry out the diffusion of boron compound and the measurement of sheet resistance value.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound is 3316
Ω/sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion are 12,265 Ω/sq..
The ratio of the two is 3.7 (=12,265/3316), it is known that in use comprising not having aforementioned specific part-structure
Bis- (neopentyl ethylene glycol) two boron and the ladder type silsesquioxane as (B) silicone compounds impurity diffusion agent composition
In the case where, it is difficult to while realizing the inhibition to outside diffusion and the good diffusion of boron.Especially, in comparative example 2, boron is to silicon
Diffusion in substrate is bad.
[comparative example 3]
Boric acid 59.0g is added into ethyl alcohol 855g, is made it dissolve while stirring.
Next, addition silicone oligomer (KR-513, Shin-Etsu Chemial Co., Ltd's system) 78.9g, and then on one side
Stirring makes it dissolve on one side, obtains impurity diffusion agent composition.
Using obtained impurity diffusion agent composition, and the film thickness of the layer containing organic boron compound is changed to from 310nm
In addition to this 300nm is operated similarly with example 1, carry out the diffusion of boron compound and the measurement of sheet resistance value.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound be 58 Ω/
Sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion is 106 Ω/sq..
The ratio of the two is 1.8 (=106/58), it is known that is using the boron comprising not having aforementioned specific part-structure
In the case where the impurity diffusion agent composition of acid and the silicone oligomer as (B) silicone compounds, it is difficult to realize simultaneously
The good diffusion of inhibition and boron to outside diffusion.
[comparative example 4]
Silicone oligomer (KR-513, Shin-Etsu Chemial Co., Ltd's system) is changed to silicone oligomer (X-24-
9590, contain terminal epoxy groups, Shin-Etsu Chemial Co., Ltd's system), in addition to this, operates in the same way, obtain with comparative example 3
Impurity diffusion agent composition.
It using obtained impurity diffusion agent composition, is operated in the same way with comparative example 3, carries out the diffusion of boron compound and thin
The measurement of layer resistance value.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound be 58 Ω/
Sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion is 106 Ω/sq..
The ratio of the two is 1.8 (=106/58), it is known that is using the boron comprising not having aforementioned specific part-structure
In the case where the impurity diffusion agent composition of acid and the silicone oligomer as (B) silicone compounds, it is difficult to realize simultaneously
The good diffusion of inhibition and boron to outside diffusion.
[comparative example 5]
Trimethylborate 33.6g is added into ethyl alcohol 850g, is made it dissolve while stirring.
Next, addition ladder type silsesquioxane (PPSQ-E, Konishi Chem Ind's system) 107.4g, Jin Eryi
Side stirring makes it dissolve on one side, obtains impurity diffusion agent composition.
Using obtained impurity diffusion agent composition, and the film thickness of the layer containing organic boron compound is changed to from 310nm
In addition to this 300nm is operated similarly with example 1, carry out the diffusion of boron compound and the measurement of sheet resistance value.
The sheet resistance value of n-type silicon substrate after having carried out the diffusion of the boron from the layer containing organic boron compound be 430 Ω/
Sq., the sheet resistance value of the n-type silicon substrate for evaluating external diffusion is 1197 Ω/sq..
The ratio of the two is 2.8 (=1197/430), it is known that using comprising not having aforementioned specific part-structure
It is difficult in the case where the impurity diffusion agent composition of trimethylborate and the ladder type silsesquioxane as (B) silicone compounds
To realize the inhibition to outside diffusion and the good diffusion of boron simultaneously.
Claims (4)
1. impurity diffusion agent composition contains (A) boron compound, (B) silicone compounds and (S) solvent,
The part-structure that there is (A) boron compound following formula to indicate,
[chemical formula 1]
In above formula, * is the end for being bonded to the chemical bond of oxygen atom.
2. impurity diffusion agent composition as described in claim 1, wherein (A) boron compound be following formula (a1) or
(a2) compound indicated,
[chemical formula 2]
In formula (a1), R1And R2It is each independently hydrogen atom or carbon atom number is 1 or more and 61 valence organic groups below, formula
(a2) in, R3It is 1 or more and 6 divalent organic groups below for carbon atom number.
3. impurity diffusion agent composition as claimed in claim 1 or 2, wherein (B) silicone compounds are silsesquioxane
Alkane.
4. the forming method of impurity diffusion layer, the forming method includes the following steps:
Impurity diffusion agent composition according to any one of claims 1 to 3 is coated on an interarea of silicon substrate and is formed
The step of coated film；With
The step for spreading the boron for (A) boron compound for including in the impurity diffusion agent composition into the silicon substrate
Suddenly.
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| JP2017152332A JP2019033147A (en) | 2017-08-07 | 2017-08-07 | Impurity diffusing agent composition and forming method of impurity diffusing layer |
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| JPH09181009A (en) * | 1995-12-26 | 1997-07-11 | Tokyo Ohka Kogyo Co Ltd | Coating liquid for boron diffusion |
| US20110108095A1 (en) * | 2009-11-06 | 2011-05-12 | Tokyo Ohka Kogyo Co., Ltd. | Mask material composition, method of forming impurity diffusion layer, and solar battery |
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| JP2014175407A (en) * | 2013-03-07 | 2014-09-22 | Tokyo Ohka Kogyo Co Ltd | Diffusion material composition, method for forming impurity diffusion layer, and solar battery |
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| JP2016195203A (en) * | 2015-04-01 | 2016-11-17 | 東レ株式会社 | P-type impurity diffusion composition, method of manufacturing semiconductor element using the same, and solar cell |
| JP2016208013A (en) * | 2015-04-21 | 2016-12-08 | 東京応化工業株式会社 | Diffusion agent composition |
| JP2017011252A (en) * | 2014-10-03 | 2017-01-12 | 東京応化工業株式会社 | Manufacturing method of semiconductor substrate |
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2017
- 2017-08-07 JP JP2017152332A patent/JP2019033147A/en active Pending
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|---|---|---|---|---|
| GB1331820A (en) * | 1970-02-19 | 1973-09-26 | Ibm | Impurity doping of semi-conductor substrate |
| DD235816A3 (en) * | 1979-08-10 | 1986-05-21 | Wilfried Lamm | BOR dopant |
| JPH09181009A (en) * | 1995-12-26 | 1997-07-11 | Tokyo Ohka Kogyo Co Ltd | Coating liquid for boron diffusion |
| US20110108095A1 (en) * | 2009-11-06 | 2011-05-12 | Tokyo Ohka Kogyo Co., Ltd. | Mask material composition, method of forming impurity diffusion layer, and solar battery |
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