CN109387902B - Thermal compensation light wave multiplexing and demultiplexing chip and preparation method thereof - Google Patents
Thermal compensation light wave multiplexing and demultiplexing chip and preparation method thereof Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
- G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
- G02B6/12028—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence based on a combination of materials having a different refractive index temperature dependence, i.e. the materials are used for transmitting light
Abstract
The invention relates to the technical field of optical wavelength division multiplexing, in particular to a thermal compensation optical wave multiplexing and demultiplexing chip and a preparation method thereof. The invention relates to a thermal compensation light wave multiplexing and demultiplexing chip, which comprises an input array waveguide, an input star coupler, an array waveguide, an output star coupler and an output array waveguide, wherein a thermal compensation structure is arranged on the input star coupler, namely a groove grating is etched and processed by adopting a semiconductor process, and silica gel with a negative thermal expansion coefficient is filled in the groove grating.
Description
Technical Field
The invention relates to the technical field of optical wavelength division multiplexing, in particular to a thermal compensation optical wave multiplexing and demultiplexing chip and a preparation method thereof.
Background
With the rapid development of technologies such as big data, cloud storage and computation, 5 th generation mobile communication, internet of things, virtual reality, artificial intelligence and the like, as a basis of information transmission, an optical fiber communication system is still a bottleneck of the development of a new generation of information technology, and as an optical communication device based on the optical fiber communication system, the development level of the optical communication device is a bottleneck of the development bottleneck of the new generation of information technology, particularly, a light wave multiplexer and demultiplexer is necessary for forming a high-speed, large-capacity and intelligent optical fiber communication system.
The wavelength intervals of the optical wave multiplexing and demultiplexing devices are 0.2nm, 0.4nm, 0.8nm and 1.6nm, and respectively correspond to 25GHz, 50GHz, 100GHz and 200 GHz. The optical wave multiplexer and demultiplexer manufactured by using silica-on-silicon technology has the advantage that the wavelength of each output channel of the optical wave multiplexer and demultiplexer drifts along with the temperature change because the refractive index of silica and the length of the adjacent array waveguide change along with the temperature change. The allowable wavelength drift range in the communication system, the channel spacing of the communication system and the transmission rate are related, and generally less than 0.05nm is required.
Optical wave multiplexer and demultiplexer with central wavelength lambdacSatisfying the grating equation:
λc＝neΔL/m (1)
in the formula, neIn order to obtain effective refractive index of the arrayed waveguide, DeltaL is the phase difference between any adjacent arrayed waveguides, m is the diffraction order of the arrayed waveguide grating, and neThe optical path difference of the Δ L waveguide array, the differential of the two sides of equation (1) with respect to the temperature T, can be obtained:
in the formula, alphasAnd (d Δ L/dT) (1/L) is the thermal expansion coefficient of the material. The thermal expansion coefficient of the same material is positive, and the design of the athermal optical wave multiplexer and demultiplexer is to adopt a compensation method, so that the phase of the optical wave after passing through the array waveguide is unchanged when the temperature is changed, namely the right side of the formula (2) is equal to zero.
Due to the inherent characteristics of the materials, the wavelength characteristics of the optical wave multiplexer and demultiplexer change along with the change of temperature, thereby affecting the optical performance of the device. Experimental results show that the temperature drift of the central wavelength of the silicon-based silica light wave multiplexing and demultiplexing device can reach 0.95nm within the range of 0-85 ℃, and the wavelength interval of the silicon-based silica light wave multiplexing and demultiplexing device is 0.8nm for 100GHz devices, so that the temperature must be compensated, and the temperature drift of the central wavelength is reduced.
Methods for solving the temperature compensation of the arrayed waveguide grating are commonly as follows: the device works under constant temperature, waveguide embedding compensation, stress compensation and negative thermo-optic coefficient waveguide material compensation, and various modes have advantages and disadvantages. The key points and technical defects of the invention are analyzed as follows:
for example, patent CN102902011A proposes a temperature insensitive arrayed waveguide grating, which includes: the invention relates to an array waveguide grating temperature compensation device, which comprises an input waveguide area, an input panel waveguide area, an array waveguide area, an output panel waveguide area and an output waveguide area which are connected in sequence, wherein at least two temperature compensation media are embedded in the array waveguide area to realize at least second-order temperature compensation.
However, this solution requires a further etching process at the waveguide portion of the array and then refilling with a temperature compensation medium. Due to the fact that the array waveguide is relatively small in distance, the etching processing is conducted again, and therefore large polarization-dependent loss and insertion loss are easily caused.
For example, patent CN101008693A proposes a method for compensating stress of athermal arrayed waveguide grating, which is characterized in that: two force points are selected along the direction of the arrayed waveguide or the direction of part of the arrayed waveguide on the arrayed waveguide grating chip, tension or tension is applied in the plane of the arrayed waveguide grating chip, and compressive stress or tensile stress is applied to the arrayed waveguide of the arrayed waveguide grating.
However, in practice, it is difficult to control the magnitude of stress during the fabrication of the optical waveguide, and the optical signal is very sensitive to stress, which results in polarization dependent loss.
For another example, patent CN103926654B proposes a method for realizing temperature compensation by mechanical compensation, which includes a planar substrate, on which an input optical waveguide, an input slab waveguide, a plurality of strip waveguides, an output slab waveguide and an output optical waveguide are sequentially connected, the substrate is divided into a first part and a second part by at least one dividing surface, the dividing surface transversely penetrates through at least one of the input slab waveguide and the output slab waveguide, and the invention compensates the temperature at the input waveguide by means of mechanical wavelength.
However, the present invention has the technical difficulties that the input waveguide needs to be cut (fragment processing), the precision processing of a mechanical compensation mechanism, the selection of the used material and the control of the distance between the two cut input waveguides.
Therefore, it is desirable to provide an optical wavelength multiplexing and demultiplexing chip and a method for fabricating the same, which can compensate for temperature drift and do not increase transmission loss, insertion loss uniformity and polarization-dependent loss.
Disclosure of Invention
Technical problem to be solved
In order to solve the above problems in the prior art, the present invention provides a thermally compensated optical wave multiplexing and demultiplexing chip and a method for manufacturing the same, wherein the thermally compensated optical wave multiplexing and demultiplexing chip can realize temperature drift compensation, and transmission loss, insertion loss uniformity and polarization-related loss are not increased.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
the invention provides a thermal compensation light wave multiplexing and demultiplexing chip.A grating structure is etched at an input panel waveguide of the chip, and a negative refractive index material for realizing a temperature drift compensation function is filled in the grating structure, so that light incident to an array waveguide from the input panel waveguide of the chip does not drift along with the temperature.
According to the invention, the chip comprises an input array waveguide, an input star coupler, an array waveguide, an output star coupler and an output array waveguide which are connected in sequence, wherein the input star coupler is an input slab waveguide.
According to the present invention, the negative refractive index material is silica gel having a negative thermal expansion coefficient.
According to the present invention, the direction of the grating in the grating structure is perpendicular to the direction of the incident light in the input slab waveguide.
According to the invention, when the core cladding refractive index difference of the chip is 1.5%, the etching depth of the grating structure is at least 28 μm, and when the core cladding refractive index difference of the chip is 0.75%, the etching depth of the grating structure is at least 30 μm, and the core cladding of the chip comprises an upper cladding, a core layer and a lower cladding.
According to the present invention, the direction of the grating in the grating structure is perpendicular to the direction of the incident light in the input slab waveguide.
A preparation method of a thermal compensation optical wave multiplexing and demultiplexing chip comprises the following steps:
step S1: after the standard array waveguide grating-based optical wave multiplexing and demultiplexing chip is prepared, a groove with a grating structure is etched at an input panel waveguide of the array waveguide grating-based optical wave multiplexing and demultiplexing chip by adopting a semiconductor process;
step S2: filling a negative refractive index material for realizing a temperature drift compensation function in the groove with the grating structure, wherein the groove with the grating structure is completely filled with the negative refractive index material;
step S3: and curing the filled negative refractive index material to obtain the thermal compensation light wave multiplexing and demultiplexing chip.
According to the invention, in step S1, a first mask layer is prepared on the surface of the input slab waveguide by sputtering, a second mask layer is formed on the first mask layer by a plasma enhanced chemical vapor deposition method, a trench pattern region is formed on the second mask layer by photolithography, and the trench pattern region is etched by plasma etching method to obtain a trench with a grating structure.
According to the present invention, as described above, the first mask is a metal layer mask and the second mask is an oxide layer mask.
According to the invention, as described above, the side wall of the trench having the grating structure forms an angle of 90 ° with the bottom of the trench.
According to the invention, the depth of the grooves with a grating structure is at least greater than 28 μm, as described above.
(III) advantageous effects
The invention has the beneficial effects that:
1. the invention provides a thermal compensation optical wave multiplexing and demultiplexing chip, which achieves the effects of realizing temperature drift compensation and not increasing transmission loss, insertion loss uniformity and polarization related loss by etching a grating structure at an input star coupler and filling a negative refractive index material into the etched grating structure.
2. The invention provides a light wave multiplexing and demultiplexing chip structure and a preparation method thereof, which do not need stress control and fragment processing and have the advantages of easy integration and manufacture, compact structure, low transmission loss, uniform insertion loss, small polarization correlation loss and the like.
Drawings
FIG. 1 is a general structure diagram of a thermally compensated optical wave multiplexing and demultiplexing chip according to the present invention;
FIG. 2 is a schematic diagram of a thermally compensated etched grating of the present invention;
FIG. 3 is a cross-sectional view of a thermally compensated etched grating of the present invention;
FIG. 4 is a schematic diagram of the working principle of the athermal compensation grating;
FIG. 5 is a schematic diagram of the working principle of the thermally compensated etched grating of the present invention.
[ description of reference ]
1: inputting the arrayed waveguide; 2: an input star coupler;
3: a thermal compensation structure;
31: a trench grating; 32: negative thermal expansion coefficient silica gel;
4: an array waveguide; 5: an output star coupler;
6: an output arrayed waveguide; 21: an upper cladding layer;
22: a core layer; 23: and a lower cladding layer.
Detailed Description
For the purpose of better explaining the present invention and to facilitate understanding, the present invention will be described in detail by way of specific embodiments with reference to the accompanying drawings.
The invention provides a thermal compensation light wave multiplexing and demultiplexing chip, namely, a grating structure is etched at an input panel waveguide of the chip on the basis, and a negative refractive index material for realizing a temperature drift compensation function is filled in the grating structure, so that light incident to an array waveguide from the input panel waveguide of the chip does not drift along with the temperature.
Specifically, a thermal compensation structure 3 is arranged on the input star coupler 2, the thermal compensation structure 3 comprises a groove grating 31, and a negative refractive index material for realizing a temperature drift compensation function is filled in the groove grating 31, so that light incident to the array waveguide from the input slab waveguide of the chip does not drift along with the temperature.
Preferably, the negative index material is a silica gel 32 having a negative coefficient of thermal expansion.
Specifically, the thermally compensated optical wave multiplexing and demultiplexing chip provided by the invention structurally comprises an input array waveguide 1, an input star coupler 2, an array waveguide 4, an output star coupler 5 and an output array waveguide 6 which are connected in sequence, wherein the input star coupler 6 is the input slab waveguide as described above.
Functionally, the input star coupler 2 is used for inputting light waves into the input star coupler 1, the input star coupler 2 is used for outputting the input light into the arrayed waveguide 4, and the output star coupler 5 is used for outputting the light transmitted by the arrayed waveguide 4 into the output arrayed waveguide 6.
Further specifically, as shown in fig. 1, the input port of the input arrayed waveguide 1 is located on the circumference of a first rowland circle, the input end of the arrayed waveguide 4 is located on the circumference of a second rowland circle having a diameter twice that of the first rowland circle, the input star coupler 2 is constituted by a common region of the areas enclosed by the first rowland circle and the second rowland circle, and the input star coupler 2 is etched and processed with a groove grating 31 by adopting a semiconductor process, the output end of the array waveguide 4 is positioned on the circumference of a second Rowland circle, the output port of the output array waveguide 6 is positioned on the circumference of a first Rowland circle, the output star coupler 5 is composed of the first Rowland circle where the output end of the array waveguide 4 is positioned and the common area of the area within the jurisdiction of the second Rowland circle where the output end of the output array waveguide 6 is positioned, and the input star coupler 2 and the output star coupler 5 are symmetrically distributed.
More specifically, as shown in fig. 2, the thermal compensation structure 3 on the input star coupler 2 includes a trench grating 31 etched by a semiconductor process and a negative thermal expansion coefficient silicon gel 32 filled in the trench grating 31.
Preferably, the direction of the grating in the grating structure is perpendicular to the direction of the incident light into the slab waveguide, i.e. the direction of the trench grating 31 is perpendicular to the direction of light propagation in the waveguide.
As shown in fig. 3, the cross-section of the core layer in the input star coupler 2 is the core layer 22, the cross-sections of the outer cladding layers are the upper cladding layer 21 and the lower cladding layer 23 labeled in the figure, and the depth of the trench grating 31 passes through the upper cladding layer 21, the core layer 22 and a portion of the lower cladding layer 23, which is defined herein to include the upper cladding layer 21, the core layer 22 and the lower cladding layer 23.
When the refractive index difference of the core cladding is 0.75%, namely the thickness of the upper cladding 21 and the thickness of the lower cladding 23 are both 10-15 μm, and the cross-sectional dimension of the core layer 22 is 6 μm × 6 μm, the etching depth of the groove grating 31 is at least 30 μm; when the refractive index difference of the core and the cladding is 1.5%, namely the thickness of the upper cladding 21 and the thickness of the lower cladding 23 are both 10-15 μm, and the cross-sectional dimension of the core layer 22 is 4.5 μm × 4.5 μm, the etching depth of the groove grating 31 is at least 28 μm.
The invention provides a preparation method of a thermal compensation light wave multiplexing and demultiplexing chip, which comprises the following steps:
step S1: after the standard array waveguide grating-based optical wave multiplexing and demultiplexing chip is prepared, a groove with a grating structure is etched at an input panel waveguide of the array waveguide grating-based optical wave multiplexing and demultiplexing chip by adopting a semiconductor process.
Specifically, because the etching depth is large, in order to ensure that the etching sidewall is almost 90 degrees, a single-layer mask process is usually difficult to achieve, therefore, before etching, the invention firstly sputters a layer of metal such as chromium or aluminum and the like on the surface of an input star coupler to be used as a first layer of mask, then uses PECVD to deposit a layer of oxide layer to be used as a second layer of mask, and then performs photoetching, during photoetching, specifically, the steps of gas phase bottom deposition film, photoresist coating, prebaking, exposure, postbaking, developing, film hardening and detection are included, after the detection is qualified, plasma is used for etching, when plasma etching is used, etching is performed according to the sequence from outside to inside, the outermost layer of photoresist is firstly etched, then the second layer of oxide layer mask is etched, then the first layer of metal mask is etched, finally the trench grating 31 is etched, and during etching, it needs to be noted that when the refractive index difference of the cladding outside the fiber, the etching depth of the groove grating 31 is at least 28 mu m, and when the refractive index difference of the cladding outside the fiber core is 0.75%, the etching depth of the groove grating 31 is at least 30 mu m;
step S2: the trench having the grating structure etched in step S1 is filled with a negative refractive index material for implementing a temperature drift compensation function.
Specifically, a layer of negative thermal expansion coefficient silica gel 32 is coated on the region where the groove grating 31 is distributed, and the negative thermal expansion coefficient silica gel 32 completely fills the whole region of the groove grating 31, optionally, the negative thermal expansion coefficient silica gel 32 selected by the invention is specifically a silica gel of WIR30-RI series or LFR/ZPU-RI series of chemitics company;
step S3: and curing the filled negative refractive index material, namely the negative thermal expansion coefficient silica gel 32 to obtain the thermal compensation optical wave multiplexing and demultiplexing chip.
Specifically, when the amount of the negative thermal expansion coefficient silica gel 32 is relatively large, the surface of the cured negative thermal expansion coefficient silica gel 32 is a complete plane, and when the amount of the negative thermal expansion coefficient silica gel 32 is relatively small, the surface of the cured negative thermal expansion coefficient silica gel 32 is a spherical-crown-like curved surface with a large radius, and as long as the negative thermal expansion coefficient silica gel 32 completely fills the whole area of the trench grating 31, the complete plane or the spherical-crown-like curved surface formed by filling the negative thermal expansion coefficient silica gel 32 with a relatively large or small amount has substantially no influence on the thermal compensation function.
The standard array waveguide grating-based optical wave multiplexing and demultiplexing chip, which does not compensate for the wavelength shift caused by temperature change, may cause the position of the optical signal entering the array waveguide 4 to shift with the temperature rise or fall, resulting in the shift of the wavelength, as shown in fig. 4.
In the present invention, the thermal compensation structure 3 disposed on the input star coupler 2 solves the problem of wavelength drift caused by temperature change in the standard array waveguide grating-based optical wave multiplexing and demultiplexing chip, specifically, a trench grating 31 etched by a semiconductor process is used, and a negative thermal expansion coefficient silica gel 32 is filled in the trench grating 31, so that when the temperature rises or falls, due to the action of the negative thermal expansion coefficient silica gel 32 in the trench grating 31, the position of an optical signal entering the array waveguide 4 does not change, and the wavelength does not drift, as shown in fig. 5.
According to the thermal compensation light wave multiplexing and demultiplexing chip and the preparation method thereof, the grating structure is etched at the input star coupler, and the negative refractive index material is filled in the etched grating structure, so that the effects of temperature drift compensation and no increase of transmission loss, insertion loss uniformity and polarization related loss are achieved, stress control and fragment processing are not needed, and the thermal compensation light wave multiplexing and demultiplexing chip has the advantages of easiness in integrated manufacturing, compact structure, low transmission loss, uniform insertion loss, small polarization related loss and the like.
It should be understood that the above description of specific embodiments of the present invention is only for the purpose of illustrating the technical lines and features of the present invention, and is intended to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, but the present invention is not limited to the above specific embodiments. It is intended that all such changes and modifications as fall within the scope of the appended claims be embraced therein.
Claims (8)
1. A thermal compensation optical wave multiplexing and demultiplexing chip is characterized in that:
a grating structure is etched at the input panel waveguide of the chip;
the grating structure is filled with negative refractive index materials for realizing the temperature drift compensation function, so that light incident to the array waveguide by the input panel waveguide of the chip does not drift along with the temperature;
the core cladding of the chip comprises an upper cladding (21), a core layer (22) and a lower cladding (23);
when the core cladding refractive index difference of the chip is 0.75%, the thickness of the upper cladding (21) and the thickness of the lower cladding (23) are both 10-15 μm, the cross-sectional dimension of the core layer (22) is 6 μm multiplied by 6 μm, the etching depth of the grating structure is at least 30 μm, and the etching depth of the grating structure meets the requirement that the grating structure can penetrate through the upper cladding (21), the core layer (22) and part of the lower cladding (23);
when the core cladding refractive index difference of the chip is 1.5%, the thickness of the upper cladding (21) and the thickness of the lower cladding (23) are both 10-15 μm, the cross-sectional dimension of the core layer (22) is 4.5 μm multiplied by 4.5 μm, the etching depth of the grating structure is at least 28 μm, and the etching depth of the grating structure meets the condition that the grating structure can penetrate through the upper cladding (21), the core layer (22) and part of the lower cladding (23).
2. The thermally compensated optical wave multiplexing and demultiplexing chip according to claim 1, wherein:
the chip comprises an input array waveguide (1), an input star coupler (2), an array waveguide (4), an output star coupler (5) and an output array waveguide (6) which are connected in sequence;
the input star coupler (2) is the input slab waveguide.
3. The thermally compensated optical wave multiplexing and demultiplexing chip according to claim 1, wherein:
the negative refractive index material is silica gel (32) with a negative thermal expansion coefficient.
4. The thermally compensated optical wave multiplexing and demultiplexing chip according to claim 1, wherein:
the direction of the grating in the grating structure is perpendicular to the direction of the incident light in the input slab waveguide.
5. A method for preparing a thermal compensation optical wave multiplexing and demultiplexing chip is characterized by comprising the following steps:
step S1: after the standard array waveguide grating-based optical wave multiplexing and demultiplexing chip is prepared, a groove with a grating structure is etched at an input panel waveguide of the array waveguide grating-based optical wave multiplexing and demultiplexing chip by adopting a semiconductor process;
step S2: filling a negative refractive index material for realizing a temperature drift compensation function in the groove with the grating structure, wherein the groove with the grating structure is completely filled with the negative refractive index material;
step S3: curing the filled negative refractive index material to obtain a thermal compensation light wave multiplexing and demultiplexing chip;
when the core cladding refractive index difference of the chip is 0.75%, the thickness of the upper cladding (21) and the thickness of the lower cladding (23) are both 10-15 μm, the cross-sectional dimension of the core layer (22) is 6 μm multiplied by 6 μm, the etching depth of the grating structure is at least 30 μm, and the etching depth of the grating structure meets the requirement that the grating structure can penetrate through the upper cladding (21), the core layer (22) and part of the lower cladding (23);
when the core cladding refractive index difference of the chip is 1.5%, the thickness of the upper cladding (21) and the thickness of the lower cladding (23) are both 10-15 μm, the cross-sectional dimension of the core layer (22) is 4.5 μm multiplied by 4.5 μm, the etching depth of the grating structure is at least 28 μm, and the etching depth of the grating structure meets the condition that the grating structure can penetrate through the upper cladding (21), the core layer (22) and part of the lower cladding (23).
6. The method according to claim 5, wherein the method further comprises:
in step S1, preparing a first mask on the surface of the input slab waveguide by sputtering, and forming a second mask on the first mask by a plasma-enhanced chemical vapor deposition method;
forming a groove pattern area on the second layer of mask by adopting a photoetching mode;
and etching the groove pattern region by adopting a plasma etching method to obtain the groove with the grating structure.
7. The method according to claim 6, wherein the method further comprises:
the first layer of mask is a metal layer mask, and the second layer of mask is an oxide layer mask.
8. The method according to claim 5, wherein the method further comprises:
the side wall of the groove with the grating structure and the bottom of the groove form a 90-degree included angle.
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| CN110196467A (en) * | 2019-06-14 | 2019-09-03 | 武汉光迅科技股份有限公司 | A kind of multi input type array waveguide grating and preparation method thereof |
| CN110515155A (en) * | 2019-08-29 | 2019-11-29 | 易锐光电科技(安徽)有限公司 | A kind of controllable array waveguide grating of wavelength |
| US10884192B1 (en) * | 2019-12-16 | 2021-01-05 | Hewlett Packard Enterprise Development Lp | Single-etch wide-bandwidth grating couplers with individually-tuned grating sections |
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