CN109385281B - 含银膜蚀刻液组合物及利用其的导电图案形成方法 - Google Patents

含银膜蚀刻液组合物及利用其的导电图案形成方法 Download PDF

Info

Publication number
CN109385281B
CN109385281B CN201810864316.3A CN201810864316A CN109385281B CN 109385281 B CN109385281 B CN 109385281B CN 201810864316 A CN201810864316 A CN 201810864316A CN 109385281 B CN109385281 B CN 109385281B
Authority
CN
China
Prior art keywords
acid
silver
film
etching
containing film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810864316.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN109385281A (zh
Inventor
田玹守
沈庆辅
尹暎晋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongwoo Fine Chem Co Ltd
Original Assignee
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongwoo Fine Chem Co Ltd filed Critical Dongwoo Fine Chem Co Ltd
Publication of CN109385281A publication Critical patent/CN109385281A/zh
Application granted granted Critical
Publication of CN109385281B publication Critical patent/CN109385281B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201810864316.3A 2017-08-11 2018-08-01 含银膜蚀刻液组合物及利用其的导电图案形成方法 Active CN109385281B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0102376 2017-08-11
KR1020170102376A KR102457165B1 (ko) 2017-08-11 2017-08-11 은 함유막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법

Publications (2)

Publication Number Publication Date
CN109385281A CN109385281A (zh) 2019-02-26
CN109385281B true CN109385281B (zh) 2021-09-07

Family

ID=65416582

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810864316.3A Active CN109385281B (zh) 2017-08-11 2018-08-01 含银膜蚀刻液组合物及利用其的导电图案形成方法

Country Status (2)

Country Link
KR (1) KR102457165B1 (ko)
CN (1) CN109385281B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102659176B1 (ko) 2020-12-28 2024-04-23 삼성디스플레이 주식회사 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102762770A (zh) * 2010-02-15 2012-10-31 三菱瓦斯化学株式会社 包含铜层及钼层的多层薄膜用蚀刻液
CN103898509A (zh) * 2012-12-24 2014-07-02 东友Fine-Chem股份有限公司 刻蚀剂组合物、金属图案的形成方法和阵列基板的制法
CN104611700A (zh) * 2013-11-01 2015-05-13 达兴材料股份有限公司 蚀刻液组合物及蚀刻方法
CN106011861A (zh) * 2015-03-26 2016-10-12 东友精细化工有限公司 用于蚀刻含银薄层的蚀刻剂组合物和用其制造显示装置的阵列基板的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100579421B1 (ko) 2004-11-20 2006-05-12 테크노세미켐 주식회사 은 식각액 조성물
TWI480360B (zh) * 2009-04-03 2015-04-11 Du Pont 蝕刻劑組成物及方法
KR101608873B1 (ko) * 2010-03-18 2016-04-05 삼성디스플레이 주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102762770A (zh) * 2010-02-15 2012-10-31 三菱瓦斯化学株式会社 包含铜层及钼层的多层薄膜用蚀刻液
CN103898509A (zh) * 2012-12-24 2014-07-02 东友Fine-Chem股份有限公司 刻蚀剂组合物、金属图案的形成方法和阵列基板的制法
CN104611700A (zh) * 2013-11-01 2015-05-13 达兴材料股份有限公司 蚀刻液组合物及蚀刻方法
CN106011861A (zh) * 2015-03-26 2016-10-12 东友精细化工有限公司 用于蚀刻含银薄层的蚀刻剂组合物和用其制造显示装置的阵列基板的方法

Also Published As

Publication number Publication date
KR102457165B1 (ko) 2022-10-19
KR20190017474A (ko) 2019-02-20
CN109385281A (zh) 2019-02-26

Similar Documents

Publication Publication Date Title
KR101905195B1 (ko) 은 박막의 식각액 조성물 및 이를 이용한 금속 패턴의 형성방법
JP5841772B2 (ja) 多重膜のエッチング液組成物及びそのエッチング方法
CN108930038B (zh) 银薄膜蚀刻液组合物、蚀刻方法和金属图案的形成方法
CN108265296B (zh) 蚀刻液组合物、配线、显示装置用阵列基板及其制造方法
KR102245565B1 (ko) 은 식각액 조성물 및 이를 이용한 표시 기판
CN109385634B (zh) 金属膜蚀刻液组合物及利用其的导电图案形成方法
KR102293674B1 (ko) 구리계 금속막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
KR102293675B1 (ko) 구리계 금속막 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
CN109797396B (zh) 银膜蚀刻液组合物、用它的蚀刻方法及金属图案形成方法
CN109423647B (zh) 金属膜蚀刻液组合物及利用其的导电图案形成方法
CN108930037B (zh) 金属膜蚀刻液组合物及利用其的导电图案形成方法
CN109385281B (zh) 含银膜蚀刻液组合物及利用其的导电图案形成方法
KR102293559B1 (ko) 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
KR102368027B1 (ko) 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN109423289B (zh) 含银膜蚀刻液组合物及利用其的导电图案形成方法
KR20190112622A (ko) 은 함유 박막 식각액 조성물 및 이를 이용하여 제조된 표시장치용 어레이기판 및 이의 제조방법
CN110359050B (zh) 含银薄膜蚀刻液组合物、用其制造的用于显示装置的阵列基板及其制造方法
CN109797397B (zh) 银蚀刻液组合物、利用它的蚀刻方法及金属图案形成方法
KR102388085B1 (ko) 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN110117792B (zh) 金属层用蚀刻剂组合物和制造导电图案的方法
KR102700386B1 (ko) 식각액 조성물 및 이를 이용한 디스플레이 장치용 어레이 기판의 제조방법
CN111172541A (zh) 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法
CN111155092B (zh) 银薄膜蚀刻液组合物、蚀刻方法及金属图案的形成方法
KR102457168B1 (ko) 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
CN110295367B (zh) 银膜蚀刻液组合物、用它的蚀刻方法及金属图案形成方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant