CN109378369A - The epitaxial layer and its manufacturing method of semi-polarity gallium nitride with the face (20-2-1) - Google Patents
The epitaxial layer and its manufacturing method of semi-polarity gallium nitride with the face (20-2-1) Download PDFInfo
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- CN109378369A CN109378369A CN201811472366.3A CN201811472366A CN109378369A CN 109378369 A CN109378369 A CN 109378369A CN 201811472366 A CN201811472366 A CN 201811472366A CN 109378369 A CN109378369 A CN 109378369A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 204
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000000034 method Methods 0.000 claims abstract description 73
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 49
- 239000010980 sapphire Substances 0.000 claims abstract description 49
- 230000012010 growth Effects 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 23
- 238000000407 epitaxy Methods 0.000 claims abstract description 14
- 238000007517 polishing process Methods 0.000 claims abstract description 12
- 150000004678 hydrides Chemical class 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000026267 regulation of growth Effects 0.000 claims description 4
- 230000008646 thermal stress Effects 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 241001062009 Indigofera Species 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 241001232809 Chorista Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000029152 Small face Diseases 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009647 facial growth Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This disclosure relates to which a kind of have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer method, comprising: PSS crystal growing surface growth be parallel to the substrate finished surface have (2021) the first semi-polarity epitaxial layer of gallium nitride being orientated；Have (20 using the growth of hydride gas-phase epitaxy (HVPE) method on the surface of the first semi-polarity epitaxial layer of gallium nitride21) thickness being orientated is not less than the second semi-polarity epitaxial layer of gallium nitride of 0.1mm；It is whole to remove the first semi-polarity epitaxial layer of gallium nitride and the second semi-polarity epitaxial layer of gallium nitride；And planarization process is carried out by the surface towards patterned sapphire substrate of chemical-mechanical polishing processes (CMP) to the first semi-polarity epitaxial layer of gallium nitride stripped down, to be had (2021) alignment surfaces semi-polarity epitaxial layer of gallium nitride.
Description
Technical field
This disclosure relates to a kind of semiconductor component and its manufacturing method, more particularly to it is a kind of with (2021) face semi-polarity
The epitaxial layer and its manufacturing method of gallium nitride.
Background technique
It is for manufacturing green wavelength or indigo plant because GaN material has band gap magnitude more broader than semiconductor based on silicon
Color wavelength light emitting devices and ideal material for manufacturing high power or high voltage transistor.The present inventors have realized that and meaning
Know, some crystal orientations of III-nitride material can provide the device performance of the raising more than other crystal orientations.Separately
Outside, due to its wide band gap, so when III-V nitride material is for can express higher hit when manufacturing integrated transistor
Wear voltage.Therefore, III-V nitride material may be ideal for photoelectron and high power electronic application.
From rollout green LD in 2009, semi-polarity (2021) orientation be recently efficiently and long wavelength LED with
The primary candidate of laser diode (LD).It is compared to polarity or nonpolarity orientation, semi-polarity gallium nitride material can be to height
Effect light emitting diode is advantageous, and solution can be provided for efficiency decline and realize in the light emitting diode it is efficient,
Longwave transmissions.But up to the present, the special crystal face (20 for the large area GaN of blue light21) be difficult to obtain.
Summary of the invention
The disclosure aims to solve the problem that above-mentioned and/or other technologies problem and provides one kind to be had for being formed on the substrate
(2021) orientation semi-polarity gallium nitride epitaxial layer method, which comprises abut the crystalline substance of patterned sapphire substrate
The growth of body growing surface has (2021) the first semi-polarity epitaxial layer of gallium nitride being orientated, the first semi-polarity epitaxy of gallium nitride
Layer is parallel to the finished surface of the substrate；Hydride gas-phase epitaxy is used on the surface of the first semi-polarity epitaxial layer of gallium nitride
(HVPE) method growth has (2021) the second semi-polarity epitaxial layer of gallium nitride being orientated, the second semi-polarity epitaxy of gallium nitride
Thickness degree is not less than 0.5mm；The first semi-polarity epitaxial layer of gallium nitride and are integrally removed from patterned sapphire substrate
Two semi-polarity epitaxial layer of gallium nitride；And by chemical-mechanical polishing processes (CMP) to first semi-polarity stripped down
The surface towards patterned sapphire substrate of epitaxial layer of gallium nitride carries out planarization process, to be had (2021) orientation
The semi-polarity epitaxial layer of gallium nitride on surface.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, further include: before growing the second semi-polarity epitaxial layer of gallium nitride, by chemical-mechanical polishing processes, (CMP is to the
The surface of one semi-polarity epitaxial layer of gallium nitride carries out planarization process.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method is grown wherein the first semi-polarity epitaxial layer of gallium nitride deposits (MOCVD) method by Metallo-Organic Chemical Vapor.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, wherein the first semi-polarity epitaxial layer of gallium nitride is grown using nitrogen carrier gas.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, wherein by chemical-mechanical polishing processes (CMP) to the first semi-polarity epitaxial layer of gallium nitride for being stripped down towards
The surface of patterned sapphire substrate carry out planarization process by remove the first semi-polarity epitaxial layer of gallium nitride more than half
Thickness.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, wherein by chemical-mechanical polishing processes (CMP) to the first semi-polarity epitaxial layer of gallium nitride for being stripped down towards
The surface of patterned sapphire substrate, which carries out planarization process, will remove entire first semi-polarity epitaxial layer of gallium nitride.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, further include: before one semi-polarity epitaxial layer of gallium nitride of growth regulation, mask layer is formed to cover the patterned sapphire
The surface of substrate.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, wherein forming the mask layer includes passing through vapour deposition process conformally deposition materials.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method further includes that the material conformally deposited is removed from the crystal growing surface.
Have (20 for being formed on the substrate according to the disclosure21) orientation semi-polarity gallium nitride epitaxial layer side
Method, wherein integrally removing the first semi-polarity epitaxial layer of gallium nitride and the nitridation of the second semi-polarity from patterned sapphire substrate
The method of gallium epitaxial layer includes one of following manner: blue precious by laser irradiation the first semi-polarity epitaxial layer of gallium nitride and patterning
Between stone lining bottom by both melt linkage interface, removed by cavity physics and in a manner of being removed by thermal stress.
It is a kind of another aspect of the present disclosure provides to have (2021) face semi-polarity gallium nitride epitaxial layer,
It include: the first semi-polarity epitaxial layer of gallium nitride and the second semi-polarity epitaxial layer of gallium nitride, wherein outside the first semi-polarity gallium nitride
Prolong layer to be grown in patterned sapphire substrate, and the second semi-polarity epitaxial layer of gallium nitride uses hydride gas-phase epitaxy (HVPE)
Method is grown on the surface of patterned sapphire substrate backwards of the first semi-polarity epitaxial layer of gallium nitride, the nitridation of the first semi-polarity
Gallium epitaxial layer and the second semi-polarity epitaxial layer of gallium nitride all have (20 backwards to the one side of patterned sapphire substrate21) it is orientated；
And first semi-polarity epitaxial layer of gallium nitride towards patterned sapphire substrate by chemical-mechanical polishing processes (CMP) into
The surface of row planarization process has (2021) orientation.
Have (20 according to the disclosure21) face semi-polarity gallium nitride epitaxial layer, wherein outside the second semi-polarity gallium nitride
Prolong layer not less than 0.5mm.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the disclosure
Example, and together with specification for explaining the principles of this disclosure.
Shown in FIG. 1 is to grow (20 in patterned sapphire substrate according to disclosure embodiment21) semi-polarity
The schematic cross-section of GaN；
It is shown in Fig. 2 be according to the embodiment of the disclosure formed on PSS substrate includes the first semi-polarity nitrogen
Change the scanning electron micrograph of half gallium polar GaN front view of gallium epitaxial layer and the second semi-polarity epitaxial layer of gallium nitride；
Fig. 3 be show it is whole according to the first semi-polarity epitaxial layer of gallium nitride of the disclosure and the second semi-polarity epitaxial layer of gallium nitride
Body seperated schematic diagram.
Fig. 4 is the CMP processing orientation schematic diagram of the epitaxial wafer after the separation shown according to the disclosure.
Specific embodiment
Example embodiments are described in detail here, and the example is illustrated in the accompanying drawings.Following description is related to
When attached drawing, unless otherwise indicated, the same numbers in different drawings indicate the same or similar elements.Following exemplary embodiment
Described in embodiment do not represent all implementations consistent with this disclosure.On the contrary, they be only with it is such as appended
The example of the consistent device and method of some aspects be described in detail in claims, the disclosure.
It is only to be not intended to be limiting and originally open merely for for the purpose of describing particular embodiments in the term that the disclosure uses.It removes
Non- defined otherwise, every other scientific and technical terms used herein have and those skilled in the art
Normally understood identical meaning.The "an" of the singular used in disclosure and the accompanying claims book, " institute
State " and "the" be also intended to including most forms, unless the context clearly indicates other meaning.It is also understood that making herein
Term "and/or" refers to and may combine comprising one or more associated any or all of project listed.
It will be appreciated that though the terms such as " parallel " or " vertical " are used in the disclosure, it is not intended that the two is complete
It is theoretical parallel or vertical, but parallel relation (such as angle between the two is within 10 milli degree) or vertical in the reasonable scope
Straight relationship (such as angle between the two and 90 degree in 10 milli degree error ranges).In referring to embodiment in detail below
When attached drawing, free token " top ", " bottom ", " top ", " lower part ", " vertical ", "horizontal" etc. can be used.For example, working as reference
When the attached drawing, " vertical " can be used for referring to the direction perpendicular to substrate surface, and "horizontal" can be used for finger and be parallel to substrate table
The direction in face." top ", " top " or " top " can be used for referring to the vertical direction far from substrate, and " lower part ", " bottom " or " under
Side " can be used for referring to the vertical direction towards substrate.Such reference is for purposes of teaching, it is no intended to as materialization device
Absolute reference.Can be in any way as suitable to device progress spatial orientation be embodied, the mode may differ from attached drawing
Shown in be orientated.Depending on context, word as used in this " if " can be construed to " ... when " or " when ...
When " or " in response to determination ".
In order to make those skilled in the art more fully understand the disclosure, with reference to the accompanying drawings and detailed description to this public affairs
It opens and is described in further detail.
As shown in Figure 1, epitaxial layer 200 is grown in patterned sapphire substrate 110, has and cross over Sapphire Substrate 110
The groove and striped array of patterned surface.Trapezoidal striped array includes the surface of multiple general planars, wherein at least some quilts
Crystal is prevented to cover (not shown) from the mask material of sapphire growth.It the surface of groove and striped array can be in different directions
Orientation, including crystal growing surface 115.Crystal growing surface can be substantially parallel to the sapphire according to some embodiments
The face c- facet, the direction of the face c- facet is as shown in arrow.Gallium nitride semiconductor can be in different location from crystal growth table
The constantly growth of face 115 is continuous to be formed until merging on the gallium nitride block that is separated from each other patterned features on a sapphire substrate
The first semi-polarity epitaxial layer of gallium nitride 120, as shown in Figure 1.Gallium nitride semiconductor can partly or wholly cross over sapphire
Substrate extends and forms " work surface " 125 of " flat ", that is, the first semi-polarity epitaxial layer of gallium nitride on substrate 110
120 and the second interface between semi-polarity epitaxial layer of gallium nitride 130.In " work surface " 125, epitaxial growth can be continued
Obtain integrated device.
The trapezoidal striped of patterned sapphire substrate 110 is formed in etching by conventional methods.For example, blue precious in patterning
The crystal orientation of 110 top alignment Sapphire Substrate of stone lining bottom formed patterning resist (such as soft resist, polymer resist,
Such as hard resist, patterning inorganic materials).PSS substrate 110 for the disclosure can be such as China Patent Publication No.
Patterned sapphire substrate 110 as CN106233429A is disclosed, is etched after locating pattern, removes resist.For
Crystal growth is good, can use and by silica or silicon nitride clearance crosses CVD or PECVD and deposit the conformal painting of high temperature formed
Layer (not shown) comes the selection surface of mask Sapphire Substrate.The high temperature conformal coating of normally about 10nm to about 50nm may be formed at
On the selection surface of patterned sapphire substrate 110.Then in high temperature by the way of covering surface 115 as shown in Figure 1
Resist layer (not shown) is formed by the way of photoetching or masking vapor deposition on conformal coating, to remove on high temperature conformal coating
Position except the face c- surface 115 forms resist layer.Then, it by selective anisotropic dry etching, etches away not
The high temperature conformal coating at surface 115 covered by resist, the crystal growth table of the Sapphire Substrate at exposing surface 115
Face 115.Then remove the etchant of other positions.To which only crystal growing surface 115 exposes, and other positions are total to by high temperature
The PSS substrate of shape coating covering.PSS substrate production for the disclosure is a kind of prior art, therefore is not repeated herein.
After getting out PSS substrate as described above, the first semi-polarity epitaxial layer of gallium nitride can be carried out using MOCVD
120.Before starting one semi-polarity epitaxial layer of gallium nitride 120 of growth regulation, the temperature dip in reaction chamber can be warming up to higher
Temperature so that buffer layer annealing a period of time.In some embodiments, temperature can be increased to about 1000 DEG C to about 1100
Value between DEG C.Annealing time can be about 1 minute to about 10 minutes.In some cases, temperature can be increased to 1000 DEG C extremely
Value between 1100 DEG C, and annealing time can be about 1 minute to about 10 minutes.
Then, the outer of the first semi-polarity epitaxial layer of gallium nitride 120 is carried out using Metallo-Organic Chemical Vapor deposition (MOVCD)
Prolong growth.In some embodiments, molecular beam epitaxy (MBE) method, vapour phase epitaxy (VPE) method or atomic layer deposition can be used.
First semi-polarity epitaxial layer of gallium nitride 120 growth can about 1000 DEG C to about 1100 DEG C at a temperature of carry out, for example, can be about
It is carried out at a temperature of 1030 DEG C.In 120 growth period of the first semi-polarity epitaxial layer of gallium nitride, chamber pressure can be remained to about 100
Millibar is to about 250 millibars.Base material NH3Flow can be about 1slm to about 4slm, and the flow of base material trimethyl gallium (TMGa)
It can be about 30sccm to about 50sccm.
As shown in Figure 1, when the first semi-polarity epitaxial layer of gallium nitride 120 semi-polarity GaN material growth from crystal growth
When surface 115 carries out, blocky group III-nitride crystal 126 multiple first are formed across 110 surface of patterned sapphire substrate,
As shown in figure 1 shown in position shown by dotted line.Although only showing a bulk 126 in Fig. 1, actually each figure
Can all occur simultaneously in the case period.It for simplicity and schematically shows, only depicts one at middle part.Because patterning is blue precious
Inclined crystal growing surface 115 on stone lining bottom 110, so gallium nitride 250 can be with (2021) crystal face is roughly parallel to
The original flat surface of Sapphire Substrate 110 is grown, and is only to illustrate to show although seeming that angle is very big shown in Fig. 1
Show.By lasting carry out epitaxial growth so that blocky 126 continued propagation of group III-nitride crystal and merge to be formed across lining
The first semi-polarity epitaxial layer of gallium nitride 120 at bottom 110, as shown in Figure 1.According to some embodiments, the first semi-polarity gallium nitride
The thickness of epitaxial layer 120 can be about 1 micron to about 10 microns.If the pattern of PSS has lesser periodicity (for example, less than 1
Micron), then the thickness of the first semi-polarity epitaxial layer of gallium nitride 120 is smaller than 1 micron.
In order to reduce the first semi-polarity epitaxial layer of gallium nitride 120 surface defects count.People would generally be in PSS substrate
On 110 before one semi-polarity epitaxial layer of gallium nitride 120 of growth regulation, buffer layer is prepared to form integrated electricity on exposing plane of crystal
The semi-polarity GaN of road grade.According to some embodiments, PSS substrate 110 low-temperature epitaxy GaN or AlN can buffer after the cleaning
Layer, for example, less than about 600 DEG C.Cleaning process is carried out using usual manner.The process of specific buffer layer repeats no more, Ke Yican
Examine prior art progress.It should be pointed out that buffer layer is not the essential constituent element of the disclosure.
Then, continue semi-polarity group III-nitride on the flat surface of the first semi-polarity epitaxial layer of gallium nitride 120
The growth of material goes out the second semi-polarity epitaxial layer of gallium nitride 130 so as to epitaxial growth.In order to facilitate the progress of subsequent technique, second
Semi-polarity epitaxial layer of gallium nitride 130 uses hydride gas-phase epitaxy (HVPE) method and is grown, and can preferably give birth in this way
It grows and grows the second thicker semi-polarity epitaxial layer of gallium nitride 130 quickly.HVPE equipment simple, speed of growth with equipment
Fastly the advantages of (rate is up to 700~800 μm/h), can growing uniform, large-sized GaN thick film, (dislocation density is only 104/
cm2).The disclosure is grown using conventional hydride gas-phase epitaxy (HVPE) method.Outside due to the second semi-polarity gallium nitride
Prolonging layer 130 is to carry out continued growth on the first semi-polarity epitaxial layer of gallium nitride 120, therefore, conventional hydride gas seldom occurs
During phase epitaxy (HVPE) method thickness increase the case where sliver.The grown by hydride gas-phase epitaxy (HVPE) method
The thickness of two semi-polarity epitaxial layer of gallium nitride 130 is not less than 100 microns.But the processing of subsequent step for convenience, the second half
The thickness of polarity epitaxial layer of gallium nitride 130 is not less than 200 microns.Alternatively, the thickness of the second semi-polarity epitaxial layer of gallium nitride 130 is not
Less than 500 microns.Alternatively, the thickness of the second semi-polarity epitaxial layer of gallium nitride 130 can achieve 1 millimeter, it is even thicker.
It selectively, can be in the second semi-polarity in order to improve the growing environment of the second semi-polarity epitaxial layer of gallium nitride 130
Before epitaxial layer of gallium nitride 130 is grown, planarization process is carried out to the surface of the first semi-polarity epitaxial layer of gallium nitride 120, thus
It obtains and is conducive to 130 growing surface of the second semi-polarity epitaxial layer of gallium nitride.For example, chemical-mechanical polishing (CMP) can be used so that outer
Prolong the surface planarisation of 120 layers of the first semi-polarity epitaxial layer of gallium nitride.It planarizes and the first semi-polarity epitaxial layer of gallium nitride can be removed
About the 10% to 20% of 120.For example, the first semi-polarity epitaxial layer of gallium nitride 120 can grow into 30 microns of thickness, and use
Chemical-mechanical polishing (CMP) removes about 3 microns to about 6 microns.For certain meaning, the first semi-polarity epitaxial layer of gallium nitride
120 can be the sacrificial layer of the component of the disclosure.Therefore, the thickness of the first semi-polarity epitaxial layer of gallium nitride 120 can be less than 10
Micron.Cause surface error to generate to reduce a large amount of remove, therefore, there is no need to carry out here largely to polish go divided by
Avoid potential sub-surface damage caused by polishing process.Experimental evidence shows for typical CMP process, and damage is polished in GaN
The depth of wound is in the range of being below about 1.5 μm to about 2.6 μm.Therefore, according to some embodiments, about 30 microns initial outer
Suitable material quality can be provided on the finished surface of GaN by prolonging thickness degree and about 3 microns to about 6 microns of CMP removal.
It is shown in Fig. 2 be according to the embodiment of the disclosure formed on PSS substrate includes the first semi-polarity nitrogen
Change the scanning electron micrograph of half gallium polar GaN front view of gallium epitaxial layer and the second semi-polarity epitaxial layer of gallium nitride.Such as Fig. 2
It is shown, clearly show that the first semi-polarity epitaxial layer of gallium nitride 120 and the second semi-polarity gallium nitride grown on PSS substrate 110
A part of epitaxial layer 130.Its structure corresponds to the schematic diagram in Fig. 1.Above with reference to described in Fig. 1, material shows to put down
Row is in (the 22 of PSS substrate43) (the 20 of facet21) GaN is orientated.
Then, the first semi-polarity epitaxial layer of gallium nitride 120 and the second semi-polarity nitrogen are being included using aforesaid way formation
Change the semi-polarity (20 of gallium epitaxial layer 13021) semi-polarity (20 is obtained on the basis of GaN epitaxial layer21) GaN epitaxial layer.
Firstly, by the half-shadow comprising the first semi-polarity epitaxial layer of gallium nitride 120 and the second semi-polarity epitaxial layer of gallium nitride 130
Property (2021) GaN epitaxial layer is stripped down from PSS substrate 110.Laser irradiation mode, cavity auxiliary can be used in the stripping process
Physics is removed and removes mode by thermal stress.Specifically, being nitrogenized using laser from the first semi-polarity of irradiated of PSS
With the linkage interface of both high temperature meltings between gallium epitaxial layer 120 and PSS substrate 110, so that the first semi-polarity gallium nitride
Epitaxial layer 120 is separated with PSS substrate 110.Selectively, as shown in the figures 1 and 2, raw in the first semi-polarity epitaxial layer of gallium nitride 120
In growth process, cavity can be formed between the first semi-polarity epitaxial layer of gallium nitride 120 and PSS substrate 110, therefore, the first half-shadow
Property epitaxial layer of gallium nitride 120 and PSS substrate 110 between connection seem fragile due to these cavitys, it is only necessary to along first
The intersection of semi-polarity epitaxial layer of gallium nitride 120 and PSS substrate 110 applies certain physical force, it can by the first semi-polarity
Epitaxial layer of gallium nitride 120 gets off from glass on PSS substrate 110.It selectively, can be to the first semi-polarity epitaxial layer of gallium nitride
Apply certain thermal stress between 120 and PSS substrate 110, so that the two separates.Shown in Fig. 3 is the nitridation of the first semi-polarity
Gallium epitaxial layer 120 and the second semi-polarity epitaxial layer of gallium nitride 130 is whole separated with PSS substrate 110 after schematic diagram.
Although above structure and method relate generally to form semi-polarity (2021) GaN epitaxial layer, but the method is available
In the formation small planar orientation of other semi-polarities.For example, the patterned sapphire substrate selectively cut with different crystal orientations can be used
Growing nonpolar (1120) and (1010) and semi-polarity (1011)、(1122).In fact, can be by using being correctly sliced
Sapphire Substrate simultaneously etches sapphire to expose c- faceted crystal growing surface, makes it possible any GaN orientation in epitaxial layer.
The above method is followed, semi-polarity (20 is carried out in patterned sapphire substrate21) epitaxial growth, planarization of GaN
And regrowth.During these embodiments, the diameter of Sapphire Substrate is 2 inches, but following identical process can also make
With other diameters.
(the 22 of its surface is parallel to specifically, making to have43) facet Sapphire Substrate patterning, and including
Away from about 6 μm of separated crystal growing surfaces 115, and in Sapphire Substrate, the etch depth D of groove is about 0.5 μm.Crystal is raw
The finished surface of long surface and substrate is oriented to about 75 °.Other surfaces PECVD oxide mask on PSS substrate.Clear
After clean, PSS is loaded into the MOCVD reactor for being used for group III-nitride growth.In H2It is carried out at 1100 DEG C under environment
Thermal cleaning and remove adsorption step.Then, low temperature AIN buffer layer (about 20nm thick) is in about 500 DEG C, 200 millibars of pressure, about 1slm
NH3It is formed under trimethyl aluminium (TMA) flow of flow and about 40sccm.The deposition rate of buffer layer is about 0.15nm/ seconds.In life
After length, in NH3And H2Mixture in make at about 1030 DEG C buffer layer anneal about 4 minutes.NH3Flow be about 0.5slm extremely
About 4slm, and H2Flow is about 4slm to about 8slm.
Then, semi-polarity (2021) buffer growth of the GaN from crystal growing surface.GaN growth condition is about 1030 DEG C,
About 200 millibars, trimethyl gallium (TMGa) flow of the NH3 flow of about 1slm and about 40sccm.It is grown in about 3.6 μm/hour
Growth rate and about 500 V/III than lower progress.The growth thickness for the first time of semi-polarity GaN epitaxial layer 120 is about 10.5 microns.
Commercial chemical-mechanical polishing method using the Novasic purchased from France Saint-Baldoph makes corrugated extension
The surface planarisation of layer.To 2 " (20 in Sapphire Substrate21) GaN is polished anti-across the mirror surface of GaN epitaxial layer to obtain
Reflective surface.Using the remaining GaN material thickness of albedo measurement, show across substrate from 10.5 μm of initial GaN epitaxial layers
Remove 3 μm of GaN materials to 5 μ ms.The difference of the amount of the material of removal is equivalent to about 20% thickness of remaining planarization GaN layer
Variation.Although thickness change can be potentially resulted in from (2021) surface is cut remaining, but it corresponds to less than 5 in the present case
×10-3Degree.Therefore, remaining (2021) facet is roughly parallel to the finished surface of substrate.Planarization GaN after CMP process
The surface of substrate passes through atomic force microscope (AFM) measurement & characterization.Measure 15 μ m, 15 μ m in size area is less than about 0.5nm's
Root mean square (RMS) roughness, and its be in the RMS roughness and morphology the two between the heart and edge in the substrate can not area
It is other.Afm image also shows straight surface variation, and the height with 6 μm of periodicity and less than 1nm, this corresponds to pattern
Change pattern below Sapphire Substrate.
Then the regrowth of epitaxial layer is carried out.First group of regeneration elongate member includes the HVPE using hydrogen bearing gas.Others are again
Growth parameter(s) changes as follows: the growth rate of about 1 μm/hour to about 2 μm/hour, about 980 DEG C to about 1070 DEG C of temperature, about
The NH3 flow of 100 millibars to about 300 millibars of pressure, about 0.5slm to about 4slm.The flow of TMGa is about 40sccm, thus
Obtain (20 after regrowth21) the semi-polarity GaN layer being orientated.(the 20 of regrowth GaN in this way21) have on surface small
Face.Although nitrogen (N2) carrier gas can be used instead of hydrogen bearing gas, cannot be obtained using nitrogen (N2) carrier gas using hydrogen bearing gas
The advantages of HVPE speed of growth obtained is fast and grows uniform, large-sized GaN thick film.
It then, as referring to Figure 3 as described above, will be outside the first semi-polarity epitaxial layer of gallium nitride 120 and the second semi-polarity gallium nitride
Prolong 130 entirety of layer to separate with PSS substrate 110, obtains chorista epitaxial wafer as shown in Figure 4.It will be outside the first semi-polarity gallium nitride
Prolong the separating interface of layer 120 as upper surface 120-1, carries out chemical-mechanical polishing (CMP).Upper surface 120-1's is oriented to
(2021).Equally, make corrugated using commercial chemical-mechanical polishing method of the Novasic purchased from France Saint-Baldoph
The surface planarisation of epitaxial layer.To the surface 120-1 (20 on the substrate of separated epitaxial wafer21) GaN is polished to obtain
Across the specular reflection surface of GaN epitaxial layer.Using the remaining GaN material thickness of albedo measurement, show across substrate from most
3 μm of GaN materials to 5 μ ms are removed in 10.5 μm of first GaN epitaxial layers.The difference of the amount of the material of removal is equivalent to residue
Planarize about 20% thickness change of GaN layer.Although thickness change can be potentially resulted in from (2021) surface cut it is remaining, still
It corresponds to less than 5 × 10 in the present case-3Degree.Therefore, remaining (2021) facet is roughly parallel to the finished surface of substrate.
The surface of planarization GaN substrate after CMP process passes through atomic force microscope (AFM) measurement & characterization.Measure 15 μm of 15 μ m
Root mean square (RMS) roughness less than about 0.5nm of dimensioned area, and its RMS in the substrate between the heart and edge is coarse
It is indistinguishable in degree and morphology the two.Afm image also shows the variation of straight surface, with 6 μm of periodicity and small
In the height of 1nm, this corresponds to pattern below patterned sapphire substrate.
Then, it can choose and carry out the second regrowth process, wherein replacing hydrogen bearing gas using nitrogen (N2) carrier gas.Other regeneration
Long parameter is according to using H2The case where when as carrier gas, changes.It is entirely different that regrowth under N2 carrier gas shows re-growth layer
Surface morphology.For these regenerate elongate member, GaN (2021) finished surface of orientation is flat, and do not show
There is facet out.The GaN for growing about 500nm is regenerated on GaN after cmp.
The variation of regrowth parameter shows to form (20 without facet by epitaxial regrowth21) GaN several trend.Temperature
The decline of degree and the raising of growth rate lead to smoother and more flat (2021)GaN.The decline of pressure and the increasing of V/III ratio
Lead to smoother and more flat (20 greatly21)GaN.AFM measurement is shown in N2(the 20 of regrowth under the conditions of carrier gas21)GaN
Surface smoothness be less than 3nm RMS.These are the results show that micro Process grade, flat (2021) GaN layer can low cost scheme
Case Grown on Sapphire Substrates.
These results are also overcomed and are grown the GaN that millimeters thick is formed on the substrate using hydride gas-phase epitaxy (HVPE)
The relevant difficult and complexity of the conventional method of layer.Such technology can lead to high internal stress in GaN layer, rupture and be mingled with
Object.Further, since the cost of high-purity precursor material and long growth time, these techniques may be costly.
It then, can be in semi-polarity (2021) multiple quantum wells is manufactured in GaN
The regrowth process on semi-polarity GaN is had been completed to maintain flat (2021) surface, carry out InGaN activity
The growth of layer.For example, in N2Under carrier gas, InGaN/GaN MQW is grown under the face standard c- multiple quantum wells (MQW) growth conditions
Structure.Select trap/barrier width for about 3nm/8nm, wherein QW growth temperature is 740 DEG C to 770 DEG C, and growth rate is about
0.1 μm/hour.Barrier growth temperature is 70 DEG C higher.MQW structure is formed during the regrowth of GaN layer.Herein without detailed
Thin description, reference can be made to the prior art carries out.
Semi-polarity (20 is described above by specific embodiment21) GaN epitaxy piece structure and manufacturing process.Wherein
Within term " about " and " about " can be used for meaning target size in some embodiments ± 20%, in some embodiments
Within ± the 10% of middle target size, in some embodiments target size ± 5% within, and there are also in some implementations
In scheme within ± the 2% of target size.Term " about " and " about " may include target size.
As used herein selective etch includes making substrate experience preferentially with rate more faster than the second material erosion
Carve the etchant of at least one material.In some cases, the second material is formed as hard mask (for example, inorganic material such as oxygen
Compound, nitride, metal etc.) or soft mask (for example, photoresist or polymer).In some embodiments, the second material
Material can be a part of device architecture, with the material property different from the first material (for example, doping density, material form
Or crystal structure).Selective etch can be dry etching or wet etching.
The techniques described herein scheme can be realized as method, wherein at least one embodiment has been provided.As described
Movement performed by a part of method can sort in any suitable manner.Therefore, embodiment can be constructed, wherein respectively
Movement is executed with the different order of the order from shown in, may include being performed simultaneously some movements, even if these movements are being said
It is illustrated as sequentially-operating in bright property embodiment.In addition, method may include more than those of showing in some embodiments
Movement, in other embodiments include than those of showing less movement.
Although attached drawing generally illustrates the fraction of the GaN layer of epitaxial growth, it should be understood that large area or whole
The available layer covering being epitaxially grown in this way of a substrate.In addition, integrated circuit device (for example, transistor, diode, thyristor,
Light emitting diode, laser diode, photodiode etc.) it the material of epitaxial growth can be used to manufacture.In some embodiments,
Integrated circuit device can be used for consumer electronic devices, such as smart phone, tablet computer, PDA, computer, TV, sensor, illumination
Equipment, display and specific integrated circuit.
Although there is described herein the illustrative embodiment of at least one of the invention, for those skilled in the art
For member, a variety of changes, modifications and improvement can be easy to carry out.Such changes, modifications and improvement are directed at essence of the invention
Within mind and range.Therefore, preceding description is only not intended as limiting by way of example.The present invention is only wanted by following patent
It asks and its equivalent is limited.
Claims (12)
1. one kind has (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer method, the method
Include:
The crystal growing surface growth for abutting patterned sapphire substrate has (2021) outside the first semi-polarity gallium nitride being orientated
Prolong layer, the first semi-polarity epitaxial layer of gallium nitride is parallel to the finished surface of the substrate；
Have (20 using the growth of hydride gas-phase epitaxy (HVPE) method on the surface of the first semi-polarity epitaxial layer of gallium nitride21)
Second semi-polarity epitaxial layer of gallium nitride of orientation, the second semi-polarity epitaxial layer of gallium nitride thickness are not less than 0.1mm；
The first semi-polarity epitaxial layer of gallium nitride and the second semi-polarity gallium nitride are integrally removed from patterned sapphire substrate
Epitaxial layer；And
By chemical-mechanical polishing processes (CMP) to the first semi-polarity epitaxial layer of gallium nitride stripped down towards figure
The surface of case Sapphire Substrate carries out planarization process, to be had (2021) alignment surfaces semi-polarity gallium nitride outside
Prolong layer.
2. according to claim 1 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, further include:
Before growing the second semi-polarity epitaxial layer of gallium nitride, by chemical-mechanical polishing processes, (CMP is to the first semi-polarity
The surface of epitaxial layer of gallium nitride carries out planarization process.
3. according to claim 1 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, wherein the first semi-polarity epitaxial layer of gallium nitride by Metallo-Organic Chemical Vapor deposit (MOCVD) method grow.
4. according to claim 3 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, wherein the first semi-polarity epitaxial layer of gallium nitride is grown using nitrogen carrier gas.
5. according to claim 1 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, wherein by chemical-mechanical polishing processes (CMP) to the first semi-polarity epitaxial layer of gallium nitride stripped down
Surface towards patterned sapphire substrate carry out planarization process by the half for removing the first semi-polarity epitaxial layer of gallium nitride with
On thickness.
6. according to claim 5 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, wherein by chemical-mechanical polishing processes (CMP) to the first semi-polarity epitaxial layer of gallium nitride stripped down
Surface towards patterned sapphire substrate, which carries out planarization process, will remove entire first semi-polarity epitaxial layer of gallium nitride.
7. according to claim 1 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, further include: before one semi-polarity epitaxial layer of gallium nitride of growth regulation, form mask layer to cover patterning indigo plant
The surface of jewel substrate.
8. according to claim 7 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, wherein forming the mask layer includes by vapour deposition process conformally deposition materials.
9. according to claim 8 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride epitaxial layer
Method, further include that the material conformally deposited is removed from the crystal growing surface.
10. according to claim 1 have (20 for being formed on the substrate21) orientation semi-polarity gallium nitride extension
The method of layer, wherein integrally removing the first semi-polarity epitaxial layer of gallium nitride and the second half-shadow from patterned sapphire substrate
The method of property epitaxial layer of gallium nitride includes one of following manner: passing through laser irradiation the first semi-polarity epitaxial layer of gallium nitride and pattern
Change between Sapphire Substrate by both melt linkage interface, cavity Aided Physical removing and in a manner of being removed by thermal stress.
11. one kind has (2021) face semi-polarity gallium nitride epitaxial layer, comprising: the first semi-polarity epitaxial layer of gallium nitride and
Second semi-polarity epitaxial layer of gallium nitride, wherein
First semi-polarity epitaxial layer of gallium nitride is grown in patterned sapphire substrate, and the second semi-polarity epitaxial layer of gallium nitride is adopted
The patterned sapphire substrate backwards of the first semi-polarity epitaxial layer of gallium nitride is grown in hydride gas-phase epitaxy (HVPE) method
Surface on, the first semi-polarity epitaxial layer of gallium nitride and the second semi-polarity epitaxial layer of gallium nitride are backwards to patterned sapphire substrate
One side all have (2021) it is orientated；And
First semi-polarity epitaxial layer of gallium nitride towards patterned sapphire substrate by chemical-mechanical polishing processes (CMP) into
The surface of row planarization process has (2021) orientation.
12. according to claim 10 have (2021) face semi-polarity gallium nitride epitaxial layer, wherein the second semi-polarity
Epitaxial layer of gallium nitride is not less than 0.5mm.
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