CN109378359A - Monocrystalline thermal oxide battery manufacturing process - Google Patents
Monocrystalline thermal oxide battery manufacturing process Download PDFInfo
- Publication number
- CN109378359A CN109378359A CN201811077771.5A CN201811077771A CN109378359A CN 109378359 A CN109378359 A CN 109378359A CN 201811077771 A CN201811077771 A CN 201811077771A CN 109378359 A CN109378359 A CN 109378359A
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- Prior art keywords
- high temperature
- manufacturing process
- furnace
- thermal oxide
- battery manufacturing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims abstract description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 238000010792 warming Methods 0.000 claims abstract description 3
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 description 6
- 230000007812 deficiency Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of solar cell manufacture process, a kind of monocrystalline thermal oxide battery manufacturing process is disclosed, the technique uses following steps: high temperature dispersing furnace is warming up to 650-800 DEG C of high temperature, and the pressure in the boiler tube of the diffusion furnace is evacuated to low pressure 50-250mbar state by vacuum pump；The O of a setting flow is passed through into the high temperature dispersing furnace2, uniform silica is formed under the high temperature and the lower pressure, wherein the mode of High temperature diffusion keeps oxide layer compactness good, and anti-PID effect is good, makes oxide layer stability with higher in the way of low pressure diffusion.
Description
Technical field
The present invention relates to a kind of solar cell manufacture process, more particularly, to a kind of monocrystalline thermal oxide battery manufacturing process.
Background technique
SunPower company of the U.S. finds for the first time and proposes PID(Potential Induced within 2005
Degradation, i.e. potential induction attenuation) effect, since then, photovoltaic art begins to focus on the research and discussion of PID, about photovoltaic
The complete mechanism of the PID effect generated in system still requires study, but can compare it is well established that single battery piece or component
Voltage is relatively low, but after the series connection of multiple components, forms higher voltage, by acting on for a long time, produces two classes meaning
Outer problem:
1) former PN junction electric field conditions change, or there are other current channels, and the photogenerated current for actually flowing through PN junction is caused to reduce；
2) device is influenced by Ion transfer, and expendable variation and the original component produced has occurred in material property
It compares, output power becomes smaller.
In solar cell production procedure, for traditional O3Mode monocrystalline silicon substrate surface formed silicon oxide layer compactness and
Uniformity is poor, cannot be fine play the effect of anti-PID；The superior compactness of silica and low-pressure section formed due to hot oxygen
The uniformity of oxide layer under part, anti-PID effect are far superior to O3The silicon oxide layer of formation.
Summary of the invention
In view of this, providing a kind of cause for improving oxide layer present invention aim to address above-mentioned the deficiencies in the prior art
Close property and uniformity improve the monocrystalline thermal oxide battery manufacturing process of the reliability of solar battery sheet.
The present invention solves technical solution used by above-mentioned the deficiencies in the prior art: a kind of monocrystalline thermal oxide battery manufacture
Technique, the technique use following steps:
Step (1): high temperature dispersing furnace is warming up to 650-800 DEG C of high temperature, by vacuum pump by the pressure in the boiler tube of the diffusion furnace
It is evacuated to low pressure 50-250mbar state；
Step (2): the O of a setting flow is passed through into the high temperature dispersing furnace2, formed under the high temperature and the lower pressure uniform
Silica.
Particularly, flow meters control the O that the setting flow is passed through in high temperature heat dissipation furnace2。
Particularly, this sets flow as 3000-8000sccm.
Compared to the prior art, monocrystalline thermal oxide battery manufacturing process of the invention, is heated up supreme by high temperature dispersing furnace
Warm 650-800 DEG C, the pressure in the boiler tube of the diffusion furnace is evacuated to by low pressure 50-250mbar state, High temperature diffusion by vacuum pump
Mode keep oxide layer compactness good, anti-PID effect is good, and low pressure diffusion mode make oxide layer stability with higher,
Oxide layer is more uniform.
Detailed description of the invention
Nothing.
Specific embodiment
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below
Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description
Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back
Other technologies scheme from the spirit and scope of the present invention.
Monocrystalline thermal oxide battery manufacturing process of the invention, using following steps:
Step (1): crystalline silicon solar cell piece uses high temperature dispersing furnace after process for etching, diffusion technique and etching technics
It is aoxidized, by the high temperature dispersing furnace temperature setting be 750 DEG C, pressure control is in 100mbar, then passes to 3000sccm's
O2。
Step (2): the process operation time is 1500s under conditions of step (1) is set, forms one layer in silicon substrate surface
Fine and close silica, barrier layer reduce battery PID failure risk existing for assembly end, while improving the conversion effect of cell piece
Rate.
The present invention is to shown in the following table of the promotion of efficiency:
| Mode of oxidizing | Eta | FF | Isc | RS | Rsh | Uoc |
| The present invention | 21.62% | 80.509 | 9.7273 | 0.0022 | 780 | 0.6746 |
| Usual manner | 21.36% | 80.204 | 9.6941 | 0.0021 | 767 | 0.6713 |
Wherein, the anti-PID test condition of assembly end and assembly end test index are as follows:
1. assembly end test temperature: 85 °C；
2. assembly end testing humidity: 85%；
3. assembly end tests backward voltage: 1000V；
4. the assembly end testing time: 288H；
5. assembly end index: decaying < 3%；
It should be understood by those skilled in the art that the embodiment of the present invention of foregoing description is only used as illustrating and being not intended to limit this hair
It is bright.The purpose of the present invention has been fully and effectively achieved.Function and structural principle of the invention in embodiment show and
Illustrate, under without departing from the principle, embodiments of the present invention can have any deformation or modification.
Claims (3)
1. a kind of monocrystalline thermal oxide battery manufacturing process, which is characterized in that the technique uses following steps:
Step (1): high temperature dispersing furnace is warming up to 650-800 DEG C of high temperature, by vacuum pump by the pressure in the boiler tube of the diffusion furnace
It is evacuated to low pressure 50-250mbar state；
Step (2): the O of a setting flow is passed through into the high temperature dispersing furnace2, formed under the high temperature and the lower pressure uniform
Silica.
2. monocrystalline thermal oxide battery manufacturing process according to claim 1, which is characterized in that flow meters control the high temperature
The O of the setting flow is passed through in heat dissipation furnace2。
3. monocrystalline thermal oxide battery manufacturing process according to claim 2, which is characterized in that this sets flow as 3000-
8000sccm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811077771.5A CN109378359A (en) | 2018-09-16 | 2018-09-16 | Monocrystalline thermal oxide battery manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811077771.5A CN109378359A (en) | 2018-09-16 | 2018-09-16 | Monocrystalline thermal oxide battery manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109378359A true CN109378359A (en) | 2019-02-22 |
Family
ID=65404904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811077771.5A Pending CN109378359A (en) | 2018-09-16 | 2018-09-16 | Monocrystalline thermal oxide battery manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109378359A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140306A (en) * | 2015-07-27 | 2015-12-09 | 尚德太阳能电力有限公司 | Solar cell structure with anti-potential induced degradation (PID) effect and production method of solar cell structure |
| CN107681018A (en) * | 2017-09-14 | 2018-02-09 | 横店集团东磁股份有限公司 | A kind of low-pressure oxidized technique of solar battery sheet |
-
2018
- 2018-09-16 CN CN201811077771.5A patent/CN109378359A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140306A (en) * | 2015-07-27 | 2015-12-09 | 尚德太阳能电力有限公司 | Solar cell structure with anti-potential induced degradation (PID) effect and production method of solar cell structure |
| CN107681018A (en) * | 2017-09-14 | 2018-02-09 | 横店集团东磁股份有限公司 | A kind of low-pressure oxidized technique of solar battery sheet |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant after: Jiangsu Runyang New Energy Technology Co.,Ltd. Address before: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant before: Jiangsu Runyang New Energy Technology Co.,Ltd. Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Jiangsu Province 224000 Applicant after: Jiangsu Runyang New Energy Technology Co.,Ltd. Address before: 215300 20th floor, Dibao financial building, East Qianjin Road, Kunshan Development Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190222 |