CN109378281A - A kind of test structure and test method diffusing into knot characterization for small spacing - Google Patents
A kind of test structure and test method diffusing into knot characterization for small spacing Download PDFInfo
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- CN109378281A CN109378281A CN201811387851.0A CN201811387851A CN109378281A CN 109378281 A CN109378281 A CN 109378281A CN 201811387851 A CN201811387851 A CN 201811387851A CN 109378281 A CN109378281 A CN 109378281A
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- test
- knot
- diffusion
- small spacing
- window
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- 238000012360 testing method Methods 0.000 title claims abstract description 76
- 238000012512 characterization method Methods 0.000 title claims abstract description 20
- 238000010998 test method Methods 0.000 title claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 60
- 230000005611 electricity Effects 0.000 claims abstract description 14
- 230000035755 proliferation Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 7
- 238000009826 distribution Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 9
- 238000003892 spreading Methods 0.000 claims description 9
- 238000003776 cleavage reaction Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 230000007017 scission Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000386 microscopy Methods 0.000 description 3
- 208000032366 Oversensing Diseases 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/46—SCM [Scanning Capacitance Microscopy] or apparatus therefor, e.g. SCM probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention discloses a kind of test structures and test method that knot characterization is diffused into for small spacing, the structure includes semi-insulating InP substrate, N-type InP buffer layer, InGaAs absorbed layer, N-type InP cap layers, photosensitive area, P electrode, N electrode, and the photosensitive area includes the 3 X 2 diffusion window region array of 2 different spacing.Test method includes: that test diffuses into junction depth and horizontal proliferation width, electricity cross-talk, optics cross-talk.The present invention has the advantages that 1. are tested by preparing the diffusion region matrix test structure of different spacing, the depth for diffusing into knot and horizontal proliferation width, electricity cross-talk and optics cross-talk can be determined；2. by analyzing with contrast test as a result, suitable diffusion spacing can be provided for the preparation of extensive small pixel planar type detector.
Description
Technical field
The invention belongs to infrared and optoelectronic areas, specially a kind of test structure that knot characterization is diffused into for small spacing
And test method.The small spacing refers to that spacing is 3-7 μm.
Background technique
With the technical need that short-wave infrared imaging technique develops to high-resolution, need to develop it is high performance it is extensive,
The process of preparing of small pixel focus planar detector.Detector scale increases, size reduces, the diffusion region of photosensitive member and diffusion
The distance between area also reduces therewith.When photosensitive elemental size be reduced to 15 μm and it is following when, between the diffusion region of photosensitive member between
Away from also reducing.When diffusion region spacing is excessive, diffusion region size is too small, may influence diffusion effect, prevent device from normal
Work, blind element rate increase；When diffusion region spacing is too small, the distance between diffusion region is too small, may generate adjacent devices it
Between electricity cross-talk and optics cross-talk.In order to realize the preparation of extensive, small pixel focus planar detector, it is suitable to need to choose
Spacing between diffusion region size and diffusion region, but there is presently no effective test structure, test that can be easy is spread
At electricity, the optics cross-talk between the effect and photosensitive member of knot.
Summary of the invention
The present invention provides a kind of test structure and test method that knot characterization is diffused into for small spacing, existing to solve
Above-mentioned technical problem, the diffusion region design for spreading device for plane provide foundation.
The present invention provides a kind of test structure that knot is diffused into for small spacing, including semi-insulating InP substrate 1, N-type InP
Buffer layer 2, InGaAs absorbed layer 3, N-type InP cap layers 4, photosensitive area 5, P electrode 6, N electrode 7.The photosensitive area includes 2 group of 3 X 2
Window region array is spread, the shape for spreading window is rectangle, wherein the diffusion window of the 1st group pattern is having a size of 200 μm of X 5um,
Spreading the distance between window is 5 μm；The diffusion window of 2nd group pattern having a size of 200 μm of X 7um, spread between window away from
From being 3 μm.
Capacitance microscopy test is scanned to above-mentioned test structure, junction depth is diffused into characterization and horizontal proliferation is wide
Degree, specific steps are as follows: 1) cleavage test sample forms the smooth cross section through diffusion window area to be detected；2) it is cuing open
The micro- distribution of differential capacitance of test diffusion window and its adjacent domain on face；3) PN junction position is determined by the micro- distribution of differential capacitance
It sets；4) the longitudinal diffusion depth and sideways diffusion depth for determining impurity are distributed according to differential capacitance.
Current-voltage test is carried out to above-mentioned test structure, to characterize electricity cross-talk, test method are as follows: give test sample
Adjacent picture elements be biased, test the curent change of pixel to be measured, test result handled, confirm adjacent picture elements between
With the presence or absence of electricity cross-talk.
Light beam induced current image checking is carried out to above-mentioned test structure, to characterize optics cross-talk, specific steps are as follows: 1) will
The electrode for testing structure is welded by lead and tests substrate interconnection, and is fixed on test platform；2) test diffusion window and
The photogenerated current of its adjacent domain is distributed；3) according to diffusion window and its photogenerated current of adjacent domain distribution characterization optics string
Sound.
The present invention has the advantages that
1. realizing the electricity diffused between junction depth and horizontal proliferation width, photosensitive member simultaneously using a kind of test structure
The test of cross-talk and optics cross-talk.
2. the planar diffusion type device detection that test structure and test method can be used for a variety of materials preparation.
3. the test data of pair the method for the present invention is further analyzed, the Carrier Profile of available material, few son
Diffusion length and the duty ratio of face battle array device etc. information.
Detailed description of the invention
Fig. 1 is test structural schematic diagram of the invention；
Fig. 2 is test method flow chart of the invention；
Fig. 3 is the micro- distribution of diffusion zone longitudinal direction differential capacitance in a specific embodiment of the invention；
Fig. 4 is the micro- distribution of diffusion zone transverse direction differential capacitance in a specific embodiment of the invention；
Fig. 5 is the light beam induced current distribution in a specific embodiment of the invention；
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the invention is all made of simplified form and using non-
Accurately ratio is only used for conveniently, lucidly aiding in illustrating the purpose of the embodiment of the present invention.
As shown in Fig. 2, a kind of test method diffusing into knot characterization for small spacing provided by the invention, comprising: mention
For a kind of test structure, the test structural schematic diagram is as shown in Fig. 1, including semi-insulating InP substrate 1, N-type InP buffer layer 2,
InGaAs absorbed layer 3, N-type InP cap layers 4, photosensitive area 5, P electrode 6, N electrode 7.The photosensitive area includes that 2 group of 3 X 2 spreads window
Area's array, the shape for spreading window is rectangle, wherein the diffusion window of the 1st group pattern spreads window having a size of 200 μm of X 5um
The distance between be 5 μm；For the diffusion window of 2nd group pattern having a size of 200 μm of X 7um, spreading the distance between window is 3 μm.
It is worth noting that the diffusion window size of array and the quantity of array can change according to actual needs.
Capacitance microscopy test is scanned to above-mentioned test structure, junction depth is diffused into characterization and horizontal proliferation is wide
Degree, specific steps are as follows: 1) cleavage forms the smooth cross section through diffusion window area to be detected；2) it is tested on section
Spread the micro- distribution of differential capacitance of window and its adjacent domain；3) PN junction position is determined by the micro- distribution of differential capacitance；4) root
The longitudinal diffusion depth and sideways diffusion depth for determining impurity are distributed according to differential capacitance；
Current-voltage test is carried out to above-mentioned test structure, to characterize electricity cross-talk, test method are as follows: give adjacent picture elements
P electrode be biased, test pixel curent change to be measured, test result handled, confirm adjacent picture elements between whether
There are electricity cross-talks；
Light beam induced current image checking is carried out to above-mentioned test structure, to characterize optics cross-talk, specific steps are as follows: 1) will
The electrode of structure is tested by electric welding and test substrate interconnection, and is fixed on test platform；2) test diffusion window and its neighbour
The photogenerated current of near field is distributed；3) according to diffusion window and its photogenerated current of adjacent domain distribution characterization optics cross-talk.
It is special by taking the small spacing test structure of indium gallium arsenic detector high density as an example below to further illustrate and embodying, it is right
The method is illustrated.
Embodiment: knot characterization test structure and test method are diffused into for the small spacing of InGaAs detector
Small spacing for InGaAs detector diffuses into the specific steps of the test method of knot characterization as shown in Fig. 2, head
First prepare the test structure that small spacing diffuses into knot characterization.It is as shown in Figure 1 to test structural schematic diagram.Including semi-insulating InP substrate
1, N-type InP buffer layer 2, InGaAs absorbed layer 3, N-type InP cap layers 4, photosensitive area 5, P electrode 6, N electrode 7.The photosensitive area packet
It includes 2 group of 3 X 2 and spreads window region array, the shape for spreading window is rectangle, wherein the diffusion window of the 1st group pattern is having a size of 200
μm X 5um, the distance between diffusion window are 5 μm；The diffusion window of 2nd group pattern spreads window having a size of 200 μm of X 7um
The distance between be 3 μm.Test the specific preparation step of structure are as follows: 1) deposit silicon nitride diffusion mask, 2) open diffusion window, 3)
Closed Tube Diffusion, 4) P, N electrode hole growth P electrode, 5) rapid thermal annealing, 6) open N slot, 7) deposit silicon nitride passivating film, 8) are opened, 9)
Growth thickeies electrode.
Capacitance microscopy test is scanned to above-mentioned test structure, junction depth is diffused into characterization and horizontal proliferation is wide
Degree, specific steps are as follows: 1) cleavage test sample forms the smooth cross section through diffusion window area to be detected；2) it is cuing open
The micro- distribution of differential capacitance of test diffusion window and its adjacent domain on face；3) PN junction position is determined by the micro- distribution of differential capacitance
It sets；4) the longitudinal diffusion depth and sideways diffusion depth for determining impurity are distributed according to differential capacitance；Fig. 3 is that diffusion zone is longitudinally micro-
Divide the micro- distribution of capacitor, Fig. 4 is the micro- distribution of lateral differential capacitance of diffusion zone and its adjacent domain.It can from Fig. 3 and Fig. 4
To obtain the position of diffusion junctions and the width of depth and its horizontal proliferation.
Current-voltage test is carried out to above-mentioned test structure, to characterize electricity cross-talk, test method are as follows: give adjacent picture elements
P electrode be biased, test pixel curent change to be measured, test result handled, confirm adjacent picture elements between whether
There are electricity cross-talks.
Light beam induced current image checking is carried out to above-mentioned test structure, to characterize optics cross-talk, specific steps are as follows: 1) will
The electrode for testing structure is welded by lead and tests substrate interconnection, and is fixed on test platform；2) test diffusion window and
The photogenerated current of its adjacent domain is distributed；3) according to diffusion window and its photogenerated current of adjacent domain distribution characterization optics string
Sound.Fig. 5 is the photogenerated current distribution for spreading window and its adjacent domain.According to photogenerated current distribution situation, it can be determined that adjacent
It whether there is optics cross-talk between two diffusion windows, and advantageously improve diffusion window, effectively inhibit optics cross-talk.
Claims (5)
1. a kind of test structure for diffusing into knot for small spacing, including semi-insulating InP substrate (1), N-type InP buffer layer (2),
InGaAs absorbed layer (3), N-type InP cap layers (4), photosensitive area (5), P electrode (6), N electrode (7), it is characterised in that:
The photosensitive area (5) includes that 2 group of 3 X 2 spreads window region array, and the shape for spreading window is rectangle, wherein the 1st group pattern
Diffusion window having a size of 200 μm of X 5um, spreading the distance between window is 5 μm；The diffusion window of 2nd group pattern having a size of
200 μm of X 7um, the distance between diffusion window are 3 μm.
2. a kind of survey for diffusing into knot characterization based on the small spacing of test structure for diffusing into knot for small spacing described in claim 1
Method for testing, which is characterized in that the test includes diffusing into junction depth and horizontal proliferation width, electricity cross-talk and optics string
Sound.
3. it is according to claim 2 it is a kind of based on described in claim 1 be used for small spacing diffuse into knot test structure it is small
Spacing diffuses into the test method of knot characterization, which is characterized in that described diffuses into junction depth and horizontal proliferation tilted object side
The step of method are as follows:
1) cleavage test sample forms the smooth cross section through diffusion window area to be detected；
2) Scanning capacitance microscope is used, the micro- distribution of differential capacitance of test diffusion window and its adjacent domain on section；
3) PN junction position is determined by the micro- distribution of differential capacitance；
4) the longitudinal diffusion depth and sideways diffusion depth for determining impurity are distributed according to differential capacitance.
4. it is according to claim 2 it is a kind of based on described in claim 1 be used for small spacing diffuse into knot test structure it is small
Spacing diffuses into the test method of knot characterization, which is characterized in that the electricity crosstalk measuring method are as follows: by giving test sample
Adjacent picture elements be biased, test the curent change of pixel to be measured, test result handled, confirm adjacent picture elements between
With the presence or absence of electricity cross-talk.
5. it is according to claim 2 it is a kind of based on described in claim 1 be used for small spacing diffuse into knot test structure it is small
Spacing diffuses into the test method of knot characterization, which is characterized in that the step of the described optics crosstalk measuring method are as follows:
1) electrode for testing structure is welded by lead and tests substrate interconnection, and be fixed on test platform；
2) it is imaged using light beam induced current, the photogenerated current distribution of test diffusion window and its adjacent domain；
3) according to diffusion window and its photogenerated current of adjacent domain distribution characterization optics cross-talk.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811387851.0A CN109378281A (en) | 2018-11-21 | 2018-11-21 | A kind of test structure and test method diffusing into knot characterization for small spacing |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811387851.0A CN109378281A (en) | 2018-11-21 | 2018-11-21 | A kind of test structure and test method diffusing into knot characterization for small spacing |
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| CN109378281A true CN109378281A (en) | 2019-02-22 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821567A (en) * | 1995-12-13 | 1998-10-13 | Oki Electric Industry Co., Ltd. | High-resolution light-sensing and light-emitting diode array |
| JP2000294830A (en) * | 1999-04-01 | 2000-10-20 | Oki Electric Ind Co Ltd | Light emitting element array |
| CN101545884A (en) * | 2009-04-30 | 2009-09-30 | 中国科学院上海技术物理研究所 | Detection method for diffused junction of InGaAs/InP plane type photoelectric detector |
| CN101692456A (en) * | 2009-10-16 | 2010-04-07 | 中国科学院上海技术物理研究所 | InGaAs liner array or area array detector with integrated filtering microstructure |
| CN102544043A (en) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | Sub-pixel structured planar InGaAs infrared detector chip |
| CN209150052U (en) * | 2018-11-21 | 2019-07-23 | 中国科学院上海技术物理研究所 | A kind of test structure diffusing into knot characterization for small spacing |
-
2018
- 2018-11-21 CN CN201811387851.0A patent/CN109378281A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821567A (en) * | 1995-12-13 | 1998-10-13 | Oki Electric Industry Co., Ltd. | High-resolution light-sensing and light-emitting diode array |
| JP2000294830A (en) * | 1999-04-01 | 2000-10-20 | Oki Electric Ind Co Ltd | Light emitting element array |
| CN101545884A (en) * | 2009-04-30 | 2009-09-30 | 中国科学院上海技术物理研究所 | Detection method for diffused junction of InGaAs/InP plane type photoelectric detector |
| CN101692456A (en) * | 2009-10-16 | 2010-04-07 | 中国科学院上海技术物理研究所 | InGaAs liner array or area array detector with integrated filtering microstructure |
| CN102544043A (en) * | 2012-01-20 | 2012-07-04 | 中国科学院上海技术物理研究所 | Sub-pixel structured planar InGaAs infrared detector chip |
| CN209150052U (en) * | 2018-11-21 | 2019-07-23 | 中国科学院上海技术物理研究所 | A kind of test structure diffusing into knot characterization for small spacing |
Non-Patent Citations (1)
| Title |
|---|
| 汪洋等: "红外光导探测器组件的串音研究", 《红外》 * |
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Application publication date: 20190222 |