CN109376470B - Photovoltaic power generation system transient equivalent impedance identification method based on ADPSS - Google Patents
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Abstract
An ADPSS-based photovoltaic power generation system transient equivalent impedance identification method comprises the following steps: measuring various parameters influencing the transient equivalent impedance of the photovoltaic power generation system and defining various functions; calculating equivalent resistivity; calculating equivalent resistance; calculating equivalent reactance; calculating equivalent impedance; verifying the accuracy of the equivalent impedance based on the ADPSS; according to the method, the influence of environmental factors such as temperature, humidity, atmospheric pressure and wind speed of the area where the photovoltaic power generation system is located on the transient equivalent impedance of the photovoltaic power generation system is considered, the transient equivalent impedance which changes continuously along with time can be monitored, the transient equivalent impedance of the photovoltaic power generation system is obtained, and on one hand, a reliable basis is provided for calculating various quantities such as voltage, current and power in the transient process of the photovoltaic power generation system; on the other hand, theoretical guidance is provided for measures taken for improving the transient stability, so that the transient stability of the photovoltaic power generation system is improved, and finally the operation level and the production efficiency of the photovoltaic power generation system are improved.
Description
Technical Field
The invention belongs to the technical field of power grids, and particularly relates to a photovoltaic power generation system transient equivalent impedance identification method based on an ADPSS.
Background
In recent years, with the increasing utilization rate of renewable energy, photovoltaic power generation systems have been developed rapidly. Because the photovoltaic power generation system is easily influenced by the external environment in the operation process, when the photovoltaic power generation system operates in a transient state, the transient equivalent impedance of the photovoltaic power generation system can change constantly along with the continuous change of the external environment. Therefore, whether transient equivalent impedance of a photovoltaic power generation system can be accurately monitored is a problem faced by the photovoltaic industry.
The existing photovoltaic power generation system transient equivalent impedance monitoring method comprises a fuzzy monitoring method and a substitution method, wherein the monitoring result obtained by the fuzzy monitoring method is inaccurate and cannot be completely tracked at any time; the monitoring range of the substitution method is limited, the whole photovoltaic power generation system in a specified area cannot be monitored, and the limitation is strong. The photovoltaic power generation system transient equivalent impedance identification method based on the ADPSS can accurately monitor the change of the transient equivalent impedance according to the change of the external environment, so that a reliable basis is provided for further research of the photovoltaic power generation system.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the photovoltaic power generation system transient equivalent impedance identification method based on the ADPSS, and the change of the equivalent impedance of the photovoltaic power generation system during transient operation is accurately tracked.
The photovoltaic power generation system transient equivalent impedance identification method based on the ADPSS comprises the following steps:
step 2, calculating the equivalent resistivity rho in the transient process of the photovoltaic power generation system, wherein the calculation formula is as follows:
wherein, P is a constant and represents the atmospheric pressure at the location of the photovoltaic power generation system, L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system, T (t) is a temperature function at the location of the photovoltaic power generation system, H (t) is a humidity function at the location of the photovoltaic power generation system, I (t) is an illumination intensity function at the location of the photovoltaic power generation system, and V (t) is a wind speed function at the location of the photovoltaic power generation system; the temperature function T (t), the humidity function H (t), the illumination intensity function I (t) and the wind speed function V (t) are respectively functions of the temperature, the humidity, the illumination intensity and the wind speed of the area where the photovoltaic power generation system is located, wherein the functions are obtained according to the change curves of the temperature, the humidity, the illumination intensity and the wind speed along with the time;
step 3, calculating equivalent resistance R in the transient process of the photovoltaic power generation system eq The calculation formula is as follows:
wherein L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system, S is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system, rho is the equivalent resistivity in the transient process of the photovoltaic power generation system, T (t) is a temperature function of the place where the photovoltaic power generation system is located, and H (t) is a humidity function of the place where the photovoltaic power generation system is located;
step 4, calculating equivalent reactance X in the transient process of the photovoltaic power generation system eq The calculation formula is as follows:
in the formula, L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system, S is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system, rho is the equivalent resistivity of the photovoltaic power generation system in the transient process, f is the rated frequency of the photovoltaic power generation system, and R is the equivalent sectional area of the power transmission line of the photovoltaic power generation system eq The equivalent resistance in the transient process of the photovoltaic power generation system, and T (t) is a temperature function of the location of the photovoltaic power generation system; h (t) is a humidity function of the location of the photovoltaic power generation system;
step 5, according to equivalent resistance R in the transient process of the photovoltaic power generation system eq And equivalent reactance X in transient process of photovoltaic power generation system eq And calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq ;
Step 5.1, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq Has a module value of Z- eq The calculation formula is as follows:
in the formula, R eq Is equivalent resistance X in the transient process of the photovoltaic power generation system eq Is equivalent reactance in the transient process of the photovoltaic power generation system, f is rated frequency of the photovoltaic power generation system, L is constant, and represents photovoltaic power generationThe equivalent length of the system power transmission line, S is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system;
step 5.2, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq Angle of impedanceThe calculation formula is as follows:
in the formula, R eq Is equivalent resistance X in the transient process of the photovoltaic power generation system eq F is the equivalent reactance in the transient process of the photovoltaic power generation system, and f is the rated frequency of the photovoltaic power generation system;
transient equivalent impedance Z of photovoltaic power generation system based on ADPSS eq The accuracy of the method is verified, and the specific method comprises the following steps:
building a transient model of the photovoltaic power generation system in the ADPSS;
parameters in the transient model of the photovoltaic power generation system include: the method comprises the following steps of A, setting a T power value of a step-up transformer, a M power value of an inverter and the number n of photovoltaic power generation system units; the photovoltaic power generation system unit includes: the photovoltaic array is connected with the inverter, the inverter is connected with the step-up transformer, and the step-up transformer is connected with a power grid; the power grid is respectively connected with the n photovoltaic power generation system units;
carrying out simulation verification on transient equivalent impedance in the transient model of the photovoltaic power generation system by using the ADPSS, and if the simulation result Z is obtained ADPSS Equivalent impedance Z in the transient process of the photovoltaic power generation system calculated in the step 5 eq The absolute value of the difference, and the equivalent impedance Z in the transient process of the photovoltaic power generation system eq If the percentage is less than or equal to the precision threshold, the method is effective;
in the formula, Z eq The transient equivalent impedance, Z, of the photovoltaic power generation system calculated by the method of the invention ADPSS And e is a precision threshold value for the transient equivalent impedance of the photovoltaic power generation system calculated in the ADPSS software.
The defining various functions includes: illumination intensity function of area where photovoltaic power generation system is locatedWherein t ∈ [6,18 ]](ii) a Function of said temperatureWherein t ∈ [0,24 ]](ii) a The function of humidityWherein t ∈ [3,24 ]](ii) a The function of the wind speed isWherein t ∈ [0,24 ]]。
The beneficial technical effects are as follows:
the invention provides a photovoltaic power generation system transient equivalent impedance identification method based on an ADPSS (advanced digital Power System simulator), which considers the influence of environmental factors such as temperature, humidity, atmospheric pressure, wind speed and the like in the area where a photovoltaic power generation system is located on the photovoltaic power generation system transient equivalent impedance, and can monitor the photovoltaic power generation system transient equivalent impedance which changes continuously along with time. On one hand, the obtained transient equivalent impedance of the photovoltaic power generation system can provide reliable basis for calculating various quantities such as voltage, current, power and the like in the transient process of the photovoltaic power generation system; on the other hand, theoretical guidance can be provided for measures taken for improving the transient stability, so that the transient stability of the photovoltaic power generation system is improved, and finally the operation level and the production efficiency of the photovoltaic power generation system are improved.
Drawings
Fig. 1 is a flowchart of a method for identifying transient equivalent impedance of an ADPSS-based photovoltaic power generation system according to an embodiment of the present invention;
fig. 2 is an ADPSS software validation model of an embodiment of the invention.
In the figure: the system comprises a power grid 1, a T-step-up transformer, an M-inverter, a B-photovoltaic array, a U-1 st photovoltaic power generation system unit and a U-n-nth photovoltaic power generation system unit.
Detailed Description
The invention is further described with reference to the accompanying drawings and specific embodiments, and as shown in fig. 1, the method for identifying transient equivalent impedance of an ADPSS-based photovoltaic power generation system includes the following steps:
in this embodiment, external environment parameters of an actual photovoltaic power generation system in a certain area are measured. Monitoring the temperature, humidity, illumination intensity and wind speed of the area for 3 months by using a monitoring system in the photovoltaic power generation system, and analyzing the change curves of the 4 variables for three months to respectively obtain the change functions of all the variables in the area within one day. A function of temperature change ofWherein t ∈ [0,24 ]]The function of the change in humidity isWherein t ∈ [3,24 ]]The function of the variation of the illumination intensity isWherein t ∈ [6,18 ]]The function of the variation of the wind speed isWherein t ∈ [0,24 ]]The atmospheric pressure in the area is P101 KpaAnd the equivalent length of the transmission line of the photovoltaic power generation system is L-3 Km.
Step 2, calculating the equivalent resistivity rho in the transient process of the photovoltaic power generation system, wherein the calculation formula is as follows:
wherein, P is a constant and represents the atmospheric pressure at the location of the photovoltaic power generation system, L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system, T (t) is a temperature function at the location of the photovoltaic power generation system, H (t) is a humidity function at the location of the photovoltaic power generation system, I (t) is an illumination intensity function at the location of the photovoltaic power generation system, and V (t) is a wind speed function at the location of the photovoltaic power generation system; the temperature function T (t), the humidity function H (t), the illumination intensity function I (t) and the wind speed function V (t) are respectively functions of the temperature, the humidity, the illumination intensity and the wind speed of the area where the photovoltaic power generation system is located, wherein the functions of the temperature function T, the humidity function H (t), the illumination intensity function I (t) and the wind speed function V (t) are obtained according to the change curves of the temperature, the humidity, the illumination intensity and the wind speed of the area where the photovoltaic power generation system is located along with time;
obtaining external environment parameters of 4 moments of 9, 12, 15 and 18 days on a certain day, substituting the obtained parameters into a formula for calculating the equivalent resistivity rho in the transient process of the photovoltaic power generation system to obtain the equivalent resistivity rho of the 4 moments of 18.821 omega mm 2 /km、16.577Ω·mm 2 /km、20.882Ω·mm 2 /km、30.253Ω·mm 2 /km。
Step 3, calculating equivalent resistance R in the transient process of the photovoltaic power generation system eq The calculation formula is as follows:
wherein L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system, S is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system, rho is the equivalent resistivity in the transient process of the photovoltaic power generation system, T (t) is a temperature function of the place where the photovoltaic power generation system is located, and H (t) is a humidity function of the place where the photovoltaic power generation system is located;
in this embodiment, the temperature variation function isWherein t ∈ [0,24 ]]The function of the change in humidity isWherein t ∈ [3,24 ]]And taking the calculation result in the step 2 as the equivalent resistivity rho, wherein the equivalent length of the power transmission line of the photovoltaic power generation system is L-3 Km, and the equivalent sectional area of the power transmission line is S-120 mm 2 。
Obtaining external environment parameters at 4 moments of 9, 12, 15 and 18 of a day, substituting the obtained parameters and the equivalent resistivity rho in the transient process of the photovoltaic power generation system into the equivalent resistance R in the transient process of the photovoltaic power generation system eq The equivalent resistance R at the 4 moments is obtained from the formula eq 18.821 Ω, 16.577 Ω, 20.882 Ω and 30.253 Ω, respectively.
Step 4, calculating equivalent reactance X in the transient process of the photovoltaic power generation system eq The calculation formula is as follows:
in the formula, L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system, S is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system, rho is the equivalent resistivity of the photovoltaic power generation system in the transient process, f is the rated frequency of the photovoltaic power generation system, and R is the equivalent sectional area of the power transmission line of the photovoltaic power generation system eq The equivalent resistance in the transient process of the photovoltaic power generation system, and T (t) is a temperature function of the location of the photovoltaic power generation system; h (t) is a humidity function of the location of the photovoltaic power generation system;
in this embodiment, the temperature variation function isWherein t ∈ [0,24 ]]The function of the change in humidity isWherein t ∈ [3,24 ]]Taking the equivalent resistivity rho as the calculation result in the step 2, and obtaining the equivalent resistance R eq Taking the calculation result in the step 3, the equivalent length of the power transmission line of the photovoltaic power generation system is L-3 Km, and the equivalent sectional area of the power transmission line is S-120 mm 2 The rated frequency f of the photovoltaic power generation system is 50 Hz.
Obtaining external environment parameters at 4 moments of 9, 12, 15 and 18 of a certain day, and obtaining the obtained parameters, frequency, equivalent resistivity rho in the transient process of the photovoltaic power generation system and equivalent resistance R in the transient process of the photovoltaic power generation system eq Substituting to calculate equivalent reactance X in transient process of photovoltaic power generation system eq The equivalent reactance X at the 4 moments is obtained from the formula eq 2.663 Ω, 1.858 Ω, 0.967 Ω, and 2.006 Ω, respectively.
Step 5, according to equivalent resistance R in the transient process of the photovoltaic power generation system eq Equivalent reactance X in transient process of photovoltaic power generation system eq And calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq ;
Step 5.1, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq Has a module value of Z- eq The calculation formula is as follows:
in the formula, R eq Is equivalent resistance X in the transient process of the photovoltaic power generation system eq The equivalent reactance is in the transient process of the photovoltaic power generation system, f is the rated frequency of the photovoltaic power generation system, L is a constant and represents the equivalent length of a power transmission line of the photovoltaic power generation system, and S is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system;
in this embodiment, the equivalent length of the power transmission line of the photovoltaic power generation system is L-3 Km, and the equivalent cross-sectional area of the power transmission line is S-120 mm 2 The rated frequency f of the photovoltaic power generation system is 50Hz, and the equivalent resistance R eq Taking out of step 3Calculated result, equivalent reactance X eq And (4) taking the calculation result in the step (4).
Obtaining external environment parameters of 4 moments of 9, 12, 15 and 18 times in a certain day, and obtaining the parameters, the frequency and the equivalent resistance R in the transient process of the photovoltaic power generation system eq And equivalent reactance X in the transient process of the photovoltaic power generation system eq Substituting to calculate equivalent impedance Z in transient process of photovoltaic power generation system eq Has a module value of Z- eq The equivalent impedance Z of the 4 moments is obtained from the formula eq Module value | Z- eq 26.756 Ω, 24.331 Ω, 20.657 Ω and 25.326 Ω, respectively.
Step 5.2, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq Angle of impedanceThe calculation formula is as follows:
in the formula, R eq Is equivalent resistance X in the transient process of the photovoltaic power generation system eq F is the equivalent reactance in the transient process of the photovoltaic power generation system, and f is the rated frequency of the photovoltaic power generation system;
in this embodiment, the rated frequency f of the photovoltaic power generation system is 50Hz, and the equivalent resistance R is eq Taking the calculation result in the step 3, and obtaining the equivalent reactance X eq And (4) taking the calculation result in the step (4).
Obtaining external environment parameters at 4 moments of 9 hours, 12 hours, 15 hours and 18 hours, and obtaining the parameters, the frequency and the equivalent resistance R in the transient process of the photovoltaic power generation system eq And equivalent reactance X in the transient process of the photovoltaic power generation system eq Substituting to calculate equivalent impedance Z in transient process of photovoltaic power generation system eq Angle of impedanceThe equivalent impedance Z of the 4 moments is obtained from the formula eq Angle of impedance22.128 °, 20.763 °, 25.756 °, 37.285 °, respectively.
Transient equivalent impedance Z of photovoltaic power generation system based on ADPSS eq The accuracy of the method is verified, and the specific method comprises the following steps:
building a transient model of the photovoltaic power generation system shown in FIG. 2 in the ADPSS;
parameters in the transient model of the photovoltaic power generation system include: the power value of a step-up transformer T, the power value of an inverter M and the number n of photovoltaic power generation system units; the photovoltaic power generation system unit includes: the photovoltaic array B is connected with the inverter M, the inverter M is connected with the step-up transformer T, and the step-up transformer T is connected with the power grid 1; the power grid is respectively connected with the n photovoltaic power generation system units; the photovoltaic power generation system unit includes: from the 1 st photovoltaic power generation system unit to the nth photovoltaic power generation system unit.
In this embodiment, the parameters in the transient model of the corresponding photovoltaic power generation system at 9 days on the same day are: setting the power value of the boost transformer T to be 3MW, setting the power value of the inverter M to be 3MW, and setting the number n of the power generation units in the photovoltaic power generation system to be 5; the parameters in the transient model of the photovoltaic power generation system corresponding to 12 hours are as follows: setting the power value of the boost transformer T to be 2MW, setting the power value of the inverter M to be 1.5MW, and setting the number n of the generating units in the photovoltaic generating system to be 8; the parameters in the transient model of the corresponding photovoltaic power generation system at the time of 15 are as follows: setting the power value of the boost transformer T to be 1.5MW, setting the power value of the inverter M to be 4MW, and setting the number n of power generation units in the photovoltaic power generation system to be 10; the parameters in the transient model of the photovoltaic power generation system corresponding to 18 hours are as follows: setting the power value of the boost transformer T to be 1MW, setting the power value of the inverter M to be 2.5MW, and setting the number n of the power generation units in the photovoltaic power generation system to be 7;
carrying out simulation verification on transient equivalent impedance in a transient model of the photovoltaic power generation system by using the ADPSS, and if a simulation result Z is obtained ADPSS Equivalent impedance Z in the transient process of the photovoltaic power generation system calculated in the step 5 eq The absolute value of the difference to the equivalent impedance Z in the transient process of the photovoltaic power generation system eq Bai (Chinese character)If the fraction is less than or equal to the precision threshold value, the method is effective;
in the formula, Z eq The transient equivalent impedance, Z, of the photovoltaic power generation system calculated by the method of the invention ADPSS And e is a precision threshold value for the transient equivalent impedance of the photovoltaic power generation system calculated in the ADPSS software.
In this embodiment, the precision threshold is 1%;
according to the parameters set in the step 6.1, the module value and the impedance angle of the transient equivalent impedance of the photovoltaic power generation system obtained by the ADPSS are 26.568 Ω, 21.942 °, 24.517 Ω, 20.931 °, 20.494 Ω, 25.562 °, 25.513 Ω and 36.986 ° respectively, and the calculation result is accurate to within one percent. The calculation result shows that the photovoltaic power generation system transient equivalent impedance identification method based on the ADPSS has an effective prediction effect on the photovoltaic power generation system transient equivalent impedance.
Claims (3)
1. The photovoltaic power generation system transient equivalent impedance identification method based on the ADPSS is characterized by comprising the following steps:
step 1, measuring various parameters influencing the transient equivalent impedance of the photovoltaic power generation system and defining various functions, wherein the measuring of the parameters influencing the transient equivalent impedance of the photovoltaic power generation system comprises the following steps: the atmospheric pressure P, the equivalent sectional area S of the power transmission line and the equivalent length L of the power transmission line; defining various functions includes: the method comprises the following steps of (1) obtaining an illumination intensity function I (t), a temperature function T (t), a humidity function H (t) and a wind speed function V (t) of an area where a photovoltaic power generation system is located;
step 2, calculating the equivalent resistivity rho in the transient process of the photovoltaic power generation system, wherein the calculation formula is as follows:
wherein, P is a constant and represents the atmospheric pressure of the place where the photovoltaic power generation system is located; l is a constant and represents the equivalent length of a power transmission line of the photovoltaic power generation system, T (t) is a temperature function of the location of the photovoltaic power generation system, H (t) is a humidity function of the location of the photovoltaic power generation system, I (t) is an illumination intensity function of the location of the photovoltaic power generation system, and V (t) is a wind speed function of the location of the photovoltaic power generation system;
step 3, calculating equivalent resistance R in the transient process of the photovoltaic power generation system eq The calculation formula is as follows:
wherein, L is a constant and represents the equivalent length of the transmission line of the photovoltaic power generation system; s is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system, rho is equivalent resistivity in the transient process of the photovoltaic power generation system, T (t) is a temperature function of the location of the photovoltaic power generation system, and H (t) is a humidity function of the location of the photovoltaic power generation system;
step 4, calculating equivalent reactance X in the transient process of the photovoltaic power generation system eq The calculation formula is as follows:
in the formula, L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system; s is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system, rho is the equivalent resistivity of the photovoltaic power generation system in the transient process, f is the rated frequency of the photovoltaic power generation system, and R is eq The equivalent resistance in the transient process of the photovoltaic power generation system, and T (t) is a temperature function of the location of the photovoltaic power generation system; h (t) is a humidity function of the place where the photovoltaic power generation system is located;
step 5, according to equivalent resistance R in the transient process of the photovoltaic power generation system eq And equivalent reactance X in transient process of photovoltaic power generation system eq Calculating equivalence in the transient process of the photovoltaic power generation systemImpedance Z eq ;
Step 5.1, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq Has a module value of Z- eq The calculation formula is as follows:
wherein R is eq Is equivalent resistance X in the transient process of the photovoltaic power generation system eq The equivalent reactance is in the transient process of the photovoltaic power generation system, f is the rated frequency of the photovoltaic power generation system, and L is a constant and represents the equivalent length of the power transmission line of the photovoltaic power generation system; s is a constant and represents the equivalent sectional area of the power transmission line of the photovoltaic power generation system;
step 5.2, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq Impedance angle of (2)The calculation formula is as follows:
wherein R is eq Is equivalent resistance X in the transient process of the photovoltaic power generation system eq The equivalent reactance is in the transient process of the photovoltaic power generation system, and f is the rated frequency of the photovoltaic power generation system.
2. The method for identifying transient equivalent impedance of an ADPSS-based photovoltaic power generation system of claim 1, wherein the accuracy of the result of the method for identifying transient equivalent impedance of an ADPSS-based photovoltaic power generation system is verified by:
building a photovoltaic power generation system transient model in the ADPSS;
parameters in the transient model of the photovoltaic power generation system include: the power value of a step-up transformer T, the power value of an inverter M and the number n of photovoltaic power generation system units; the photovoltaic power generation system unit includes: the photovoltaic array is connected with the inverter, the inverter is connected with the step-up transformer, and the step-up transformer is connected with a power grid; the power grid is respectively connected with the n photovoltaic power generation system units;
carrying out simulation verification on transient equivalent impedance in the transient model of the photovoltaic power generation system by using the ADPSS, and if the simulation result Z is obtained ADPSS And 5, calculating equivalent impedance Z in the transient process of the photovoltaic power generation system eq The absolute value of the difference, and the equivalent impedance Z in the transient process of the photovoltaic power generation system eq If the percentage is less than or equal to the precision threshold, the method for identifying the transient equivalent impedance of the photovoltaic power generation system is effective;
in the formula, Z eq Is the transient equivalent impedance, Z, of the photovoltaic power generation system ADPSS And e is a precision threshold value for the transient equivalent impedance of the photovoltaic power generation system calculated in the ADPSS software.
3. The method of identifying transient equivalent impedance of an ADPSS-based photovoltaic power generation system of claim 1, wherein the defining the various functions comprises: illumination intensity function of area where photovoltaic power generation system is locatedWherein t ∈ [6,18 ]](ii) a Function of said temperatureWherein t ∈ [0,24 ]](ii) a The function of humidityWherein t ∈ [3,24 ]](ii) a The function of the wind speed isWherein t ∈ [0,24 ]]。
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