CN109375096A - A kind of RF MEMS electrostatic drive under the bending condition based on flexible base board switchs microwave property analysis method - Google Patents
A kind of RF MEMS electrostatic drive under the bending condition based on flexible base board switchs microwave property analysis method Download PDFInfo
- Publication number
- CN109375096A CN109375096A CN201811029817.6A CN201811029817A CN109375096A CN 109375096 A CN109375096 A CN 109375096A CN 201811029817 A CN201811029817 A CN 201811029817A CN 109375096 A CN109375096 A CN 109375096A
- Authority
- CN
- China
- Prior art keywords
- base board
- flexible base
- electrostatic drive
- mems
- mems electrostatic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
Abstract
The invention discloses the RF MEMS electrostatic drives under a kind of bending condition based on flexible base board to switch microwave property analysis method, mainly include two steps: one is establishing the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, realizing the extraction of key structural parameters variable quantity between RF MEMS electrostatic drive switch and flexible base board.The second is switching flexural property model based on RF MEMS electrostatic drive, the deformation quantity of RF MEMS electrostatic drive switch/substrate co-deflection is obtained.Based on the above parameter, rebuilds RF MEMS electrostatic drive and switch microwave property model, influence of the analysis bending deformation to RF MEMS electrostatic drive switch microwave property.The present invention provides one kind to be based on complex environment space, and the RF MEMS electrostatic drive comprising RF MEMS electrostatic drive switch and flexible base board co-deflection model switchs microwave property analysis method.
Description
Technical field
A kind of RF the present invention relates to mechanical analyzing method, in particular under a kind of bending condition based on flexible base board
MEMS electrostatic drive switchs microwave property analysis method.
Background technique
In the tide of current Informatization Development, flexible electronic device with its unique flexible ductility and its efficiently,
The manufacturing process of low cost has boundless application prospect in fields such as national defence, information, medical treatment, the energy.Flexible electronic device
Popular developing direction of the part as new generation of semiconductor device, the new electronic technology being built upon on flexible/extension substrate,
The organic/inorganic electronic device production of active/passive on flexible substrates, is both had the property of conventional rigid electronic system by it
Can, it may have stretch, distort, folding this unique characteristic, therefore to the conformal of complex environment space application, miniaturization,
Lightweight, intelligence etc. have unrivaled importance and advantage.MEMS (MEMS) flexible device is as soft
Property electronic device important branch, conformal, high-performance, small size, intelligentized sensor/actuator become current flexible electrical
Essential component part in subsystem, especially RF MEMS (radio-frequency micro electromechanical system) flexible device, since it is in machine
Wide application prospect in load/spaceborne radar and Internet of Things network communication system, so that various RF MEMS flexibly direct writing device/sensors
Become research hotspot in recent years.As RF MEMS flexible device, primary characteristic be nothing but have it is unique flexible
Property, this is also the application foundation and research power of associated flexible device development, therefore RF MEMS flexible device bend characteristic is most
The problem in science for needing to study.The current either still RF MEMS flexible device based on all kinds of flexible base boards based on silicon substrate,
Its main research contents and purpose also all in device design, preparation and it is un-flexed under the conditions of the performance test stage, RF
The research of flexural property modeling and the Experimental Characterization verifying of MEMS flexible device is at present also in blank.However, no matter from science
Angle or engineer application level are studied, all there is an urgent need to set up the flexural property of the RF MEMS device based on flexible base board
Model, to push the further investigation and development and application of RF MEMS flexible device.
Summary of the invention
Goal of the invention: in order to fill up both at home and abroad to the research blank of RF MEMS electrostatic drive switch flexural property model, originally
Invention provides one kind based on complex environment space, includes RF MEMS electrostatic drive switch and flexible base board co-deflection model
RF MEMS electrostatic drive switchs microwave property analysis method.
Technical solution: the present invention provides the RF MEMS electrostatic drive switches under a kind of bending condition based on flexible base board
Microwave property analysis method, it is characterised in that: the following steps are included:
First, being switched for RF MEMS electrostatic drive two-end fixed beam:
Step 1: establishing the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, it is assumed that
Two-end fixed beam beam length is L, and beam thickness is t, and the Young's modulus of beam is E, Poisson's ratio n, when there are larger for two-end fixed beam structure
Residual compressive stress P, residual compressive stress be greater than occur buckling limit stressWhen, two-end fixed beam structure meeting
Buckling, the shape of buckling mode occurs upwards (or downwards) are as follows:
Wherein the maximum displacement size of two-end fixed beam central point is h:
Further, it is assumed that two-end fixed beam film bridge to the initial spacing of substrate is g, and flexible base board bending curvature radius is R, soft
Property substrate bending after corresponding central angle be α, can obtain:
Further, flexible base board is bent caudacoria bridge to substrate spacing variable quantity are as follows:
Step 2: after flexible base board bending, co-planar waveguide signal wire and ground wire will not will occur in a plane, impedance
Variation.Assuming that co-planar waveguide signal line width is S, signal wire to distance between ground wire is W, and flexible base board bending curvature radius is
R, at this time co-planar waveguide characteristic impedance are as follows:
Wherein:
Step 3: the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection obtains RF
The deformation quantity of MEMS electrostatic drive switch/substrate co-deflection.Based on the above parameter, rebuilds RF MEMS electrostatic drive and open
Close microwave property model, influence of the analysis bending deformation to RF MEMS electrostatic drive switch microwave property.It is quiet for RF MEMS
Electric drive paralleling switch switchs ON state capacitor to return loss (S11Parameter) influence are as follows:
Further, if S11≤ -10dB or ω CuZ0< < 2 can be obtained:
Wherein ω is the working frequency of RF MEMS electrostatic drive switch, CuTo switch between co-planar waveguide signal wire and
Join capacitor, Z0For the characteristic impedance of co-planar waveguide.
Step 4: the switch deformation of RF MEMS electrostatic drive caused by flexible base board is bent can influence to be attracted electricity in terms of two
Pressure, one is will lead to the initial spacing variation of the upper bottom crown of electrostatic drive switch after flexible base board bending and insertion switch ON state
The variation of capacitor, the second is characteristic impedance changes after will lead to co-planar waveguide bending after flexible base board bending.For RF
MEMS two-end fixed beam switch, the non-bending deformation of flexible base board are remaining if there are biggish residual compressive stress for two-end fixed beam
When compression is greater than the limit stress that buckling occurs, upwards (or downwards) buckling, RF MEMS can occur for two-end fixed beam structure
Two-end fixed beam switchs ON state return loss are as follows:
Wherein, u (x) is the shape of two-end fixed beam buckling mode, and w is the width of two-end fixed beam, and g is two-end fixed beam
Switch distance between polar plate, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition.
Further, buckling occurs for flexible base board bending deformation, radius of curvature R, two-end fixed beam structure, and RF MEMS is bis-
Clamped beam is held to switch ON state return loss are as follows:
Wherein, u (x) is the shape of two-end fixed beam buckling mode, and w is the width of two-end fixed beam, and g is two-end fixed beam
Initial distance between switch pole plate, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition, y (x) is that flexible base board is curved
Distance under the conditions of song on two-end fixed beam between bottom crown:
Further, buckling, RF MEMS do not occur for flexible base board bending deformation, radius of curvature R, two-end fixed beam structure
Two-end fixed beam switchs ON state return loss are as follows:
Wherein, u (x) is the shape of two-end fixed beam buckling mode, and w is the width of two-end fixed beam, and g is two-end fixed beam
Initial distance between switch pole plate, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition, y (x) is that flexible base board is curved
Distance under the conditions of song on two-end fixed beam between bottom crown.
Second, for RF MEMS electrostatic drive cantilever switch:
Step 1: establishing the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, cantilever
The stress gradient of beam in the longitudinal direction will generate an equivalent Moment on beam, and the form of beam is under the action of moment of flexure
It will crimp.The direction of curling and the degree of deviation are related with the direction of the property of residual stress, size and stress gradient.
The equivalent bending moment size as caused by the stress gradient on cantilever beam are as follows:
Wherein, t is that beam is thick, and w is deck-siding, and z is the position on cantilever beam thickness direction, and σ (z) is cantilever beam in length direction
On function of the residual stress about thickness, residual stress is that negative value indicates that internal stress is compression, and residual stress is positive value table
Show that internal stress is tensile stress.It can must act on the amount of deflection size that the moment of flexure of cantilever beam end generates beam end are as follows:
Further, it is assumed that cantilever beam film bridge to the initial spacing of substrate is g, and flexible base board bending curvature radius is R, flexible base
Corresponding central angle is α after plate benging, can be obtained:
Further, flexible base board is bent caudacoria bridge to substrate spacing variable quantity are as follows:
Step 2: after flexible base board bending, co-planar waveguide signal wire and ground wire will not will occur in a plane, impedance
Variation.Assuming that co-planar waveguide signal line width is S, signal wire to distance between ground wire is W, and flexible base board bending curvature radius is
R, at this time co-planar waveguide characteristic impedance are as follows:
Wherein:
Step 3: the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection obtains RF
The deformation quantity of MEMS electrostatic drive switch/substrate co-deflection.Based on the above parameter, rebuilds RF MEMS electrostatic drive and open
Close microwave property model, influence of the analysis bending deformation to RF MEMS electrostatic drive switch microwave property.It is quiet for RF MEMS
Electric drive paralleling switch switchs ON state capacitor to return loss (S11Parameter) influence are as follows:
Further, if S11≤ -10dB or ω CuZ0< < 2 can be obtained:
Wherein ω is the working frequency of RF MEMS electrostatic drive switch, CuTo switch between co-planar waveguide signal wire and
Join capacitor, Z0For the characteristic impedance of co-planar waveguide.
Step 4: the switch deformation of RF MEMS electrostatic drive caused by flexible base board is bent can influence to be attracted electricity in terms of two
Pressure, one is will lead to the initial spacing variation of the upper bottom crown of electrostatic drive switch after flexible base board bending and insertion switch ON state
The variation of capacitor, the second is characteristic impedance changes after will lead to co-planar waveguide bending after flexible base board bending.For RF
MEMS cantilever switch, the non-bending deformation of flexible base board, if cantilever beam has residual stress gradient, cantilever in the longitudinal direction
Girder construction can bend upwards (or downwards), RF MEMS cantilever switch ON state return loss are as follows:
Wherein,For the shape of cantilever beam buckling mode, w is the width of cantilever beam, and g opens for cantilever beam
Initial distance between the pole plate of pass, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition.
Further, buckling, RF MEMS cantilever beam occur for flexible base board bending deformation, radius of curvature R, cantilever beam structure
Switch ON state return loss are as follows:
Wherein,For the shape of cantilever beam buckling mode, w is the width of cantilever beam, and g opens for cantilever beam
Initial distance between the pole plate of pass, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition, y (x) is flexible base board bending
Distance above and below condition Analysis of A Cantilever Beam Under between pole plate.
Working principle: the present invention switchs the research of flexural property model in order to fill up to RF MEMS electrostatic drive both at home and abroad
Blank provides the RF MEMS electrostatic drive switch microwave property Parameter Variation under a kind of bending condition based on flexible base board
Estimation method.The present invention takes two steps mainly to handle RF MEMS electrostatic drive under the conditions of flexible base board bending deformation
Microwave property modeling is switched, to obtain the parsing mould influenced after RF MEMS electrostatic drive switch deformation on device microwave property
Type.One is establishing the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, RF is realized
The extraction of key structural parameters variable quantity between MEMS electrostatic drive switch and flexible base board.The second is being based on RF MEMS electrostatic
Driving switch flexural property model obtains the deformation quantity of RF MEMS electrostatic drive switch/substrate co-deflection.Pass through the above parameter
Based on, it rebuilds RF MEMS electrostatic drive and switchs microwave property model, analysis bending deformation switchs RF MEMS electrostatic drive
The influence of microwave property.
The utility model has the advantages that compared with prior art, the present invention is established for the first time based on RF MEMS electrostatic drive switch and flexible base
The deformation coupling model of plate co-deflection realizes that key structural parameters change between RF MEMS electrostatic drive switch and flexible base board
The extraction of amount.The microwave property model that RF MEMS electrostatic drive switchs after bending deformation is further established, one kind is provided and is based on
Complex environment space, the RF MEMS electrostatic drive comprising RF MEMS electrostatic drive switch and flexible base board co-deflection model switch
Microwave property analysis method is filled up both at home and abroad to the research blank of RF MEMS electrostatic drive switch microwave property model.
Detailed description of the invention
Fig. 1 is flow chart of the invention；
Fig. 2 is two-end fixed beam electrostatic drive Switch Analysis method provided by the invention and simulation, test result comparison diagram.
Fig. 3 is cantilever beam electrostatic drive Switch Analysis method provided by the invention and simulation, test result comparison diagram.
Specific embodiment
Further explanation is done to the present invention with reference to the accompanying drawing.
First, being switched for two-end fixed beam electrostatic drive:
As shown in Figure 1, the present invention is by taking RF MEMS two-end fixed beam as an example, in the present embodiment to each parameter value, RF
The material of MEMS two-end fixed beam electrostatic drive switch beam is gold, and flexible substrate material is liquid crystal polymer (LCP), the length of beam
L=600 μm, w=100 μm of the width of beam, t=2 μm of the thickness of beam, initial g=2 μm of spacing of upper bottom crown, the Young's modulus E of beam
=78Gpa, Poisson's ratio n=0.42.Assuming that above-mentioned RF MEMS two-end fixed beam electrostatic drive switch is initially present twin shaft residual pressure
Stress, the upward buckling of beam, h=0.5 μm of maximum flexion distance, as flexible base board is gradually curved, the curvature of substrate is gradually increased by 0
Greatly to 33.3m-1。
Shown in specific step is as follows:
Step 1: establishing the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, it is assumed that
Two-end fixed beam beam length is L, and beam thickness is t, and the Young's modulus of beam is E, Poisson's ratio n, when there are larger for two-end fixed beam structure
Residual compressive stress P, residual compressive stress be greater than occur buckling limit stressWhen, two-end fixed beam structure meeting
Buckling, the shape of buckling mode occurs upwards (or downwards) are as follows:
Wherein the maximum displacement size of two-end fixed beam central point is h:
Wherein,For rotary inertia.
Further, it is assumed that two-end fixed beam film bridge to the initial spacing of substrate is g, and flexible base board bending curvature radius is R, soft
Property substrate bending after corresponding central angle be α, can obtain:
Further, flexible base board is bent caudacoria bridge to substrate spacing variable quantity are as follows:
Step 2: after flexible base board bending, co-planar waveguide signal wire and ground wire will not will occur in a plane, impedance
Variation.Assuming that co-planar waveguide signal line width is S, signal wire to distance between ground wire is W, and flexible base board bending curvature radius is
R, at this time co-planar waveguide characteristic impedance are as follows:
Wherein:
Step 3: the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection obtains RF
The deformation quantity of MEMS electrostatic drive switch/substrate co-deflection.Based on the above parameter, rebuilds RF MEMS electrostatic drive and open
Close microwave property model, influence of the analysis bending deformation to RF MEMS electrostatic drive switch microwave property.It is quiet for RF MEMS
Electric drive paralleling switch switchs ON state capacitor to return loss (S11Parameter) influence are as follows:
Further, if S11≤ -10dB or ω CuZ0< < 2 can be obtained:
Wherein ω is the working frequency of RF MEMS electrostatic drive switch, CuTo switch between co-planar waveguide signal wire and
Join capacitor, Z0For the characteristic impedance of co-planar waveguide.
Step 4: the switch deformation of RF MEMS electrostatic drive caused by flexible base board is bent can influence to be attracted electricity in terms of two
Pressure, one is will lead to the initial spacing variation of the upper bottom crown of electrostatic drive switch after flexible base board bending and insertion switch ON state
The variation of capacitor, the second is characteristic impedance changes after will lead to co-planar waveguide bending after flexible base board bending.For RF
MEMS two-end fixed beam switch, the non-bending deformation of flexible base board are remaining if there are biggish residual compressive stress for two-end fixed beam
When compression is greater than the limit stress that buckling occurs, upwards (or downwards) buckling, RF MEMS can occur for two-end fixed beam structure
Two-end fixed beam switchs ON state return loss are as follows:
Wherein, u (x) is the shape of two-end fixed beam buckling mode, and w is the width of two-end fixed beam, and g is two-end fixed beam
Switch distance between polar plate, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition.
Further, buckling occurs for flexible base board bending deformation, radius of curvature R, two-end fixed beam structure, and RF MEMS is bis-
Clamped beam is held to switch ON state return loss are as follows:
Wherein, u (x) is the shape of two-end fixed beam buckling mode, and w is the width of two-end fixed beam, and g is two-end fixed beam
Initial distance between switch pole plate, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition, y (x) is that flexible base board is curved
Distance under the conditions of song on two-end fixed beam between bottom crown:
Further, buckling, RF MEMS do not occur for flexible base board bending deformation, radius of curvature R, two-end fixed beam structure
Two-end fixed beam switchs ON state return loss are as follows:
Wherein, u (x) is the shape of two-end fixed beam buckling mode, and w is the width of two-end fixed beam, and g is two-end fixed beam
Initial distance between switch pole plate, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition, y (x) is that flexible base board is curved
Distance under the conditions of song on two-end fixed beam between bottom crown.
Second, being switched for cantilever beam electrostatic drive:
As shown in Figure 1, the present invention is by taking RF MEMS cantilever beam as an example, in the present embodiment to each parameter value, RF MEMS
The material of cantilever beam electrostatic drive switch beam is gold, and flexible substrate material is liquid crystal polymer (LCP), the length L=150 μ of beam
M, w=100 μm of the width of beam, t=2 μm of the thickness of beam, the size of bottom crown are long L '=60 μm；Wide w '=150 μm, thickness by
CPW transmission line thickness determines.Assuming that above-mentioned cantilever beam structure electrostatic actuator is initially present the twin shaft remnants that size is 2.5MPa
Compression, as flexible base board is gradually curved, the curvature of substrate is gradually increased by 0 to 33.3m-1。
Shown in specific step is as follows:
Step 1: establishing the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, cantilever
The stress gradient of beam in the longitudinal direction will generate an equivalent Moment on beam, and the form of beam is under the action of moment of flexure
It will crimp.The direction of curling and the degree of deviation are related with the direction of the property of residual stress, size and stress gradient.
The equivalent bending moment size as caused by the stress gradient on cantilever beam are as follows:
Wherein, t is that beam is thick, and w is deck-siding, and z is the position on cantilever beam thickness direction, and σ (z) is cantilever beam in length direction
On function of the residual stress about thickness, residual stress is that negative value indicates that internal stress is compression, and residual stress is positive value table
Show that internal stress is tensile stress.It can must act on the amount of deflection size that the moment of flexure of cantilever beam end generates beam end are as follows:
Wherein,For rotary inertia.
Further, it is assumed that cantilever beam film bridge to the initial spacing of substrate is g, and flexible base board bending curvature radius is R, flexible base
Corresponding central angle is α after plate benging, can be obtained:
Further, flexible base board is bent caudacoria bridge to substrate spacing variable quantity are as follows:
Step 2: after flexible base board bending, co-planar waveguide signal wire and ground wire will not will occur in a plane, impedance
Variation.Assuming that co-planar waveguide signal line width is S, signal wire to distance between ground wire is W, and flexible base board bending curvature radius is
R, at this time co-planar waveguide characteristic impedance are as follows:
Wherein:
Step 3: the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection obtains RF
The deformation quantity of MEMS electrostatic drive switch/substrate co-deflection.Based on the above parameter, rebuilds RF MEMS electrostatic drive and open
Close microwave property model, influence of the analysis bending deformation to RF MEMS electrostatic drive switch microwave property.It is quiet for RF MEMS
Electric drive paralleling switch switchs ON state capacitor to return loss (S11Parameter) influence are as follows:
Further, if S11≤ -10dB or ω CuZ0< < 2 can be obtained:
Wherein ω is the working frequency of RF MEMS electrostatic drive switch, CuTo switch between co-planar waveguide signal wire and
Join capacitor, Z0For the characteristic impedance of co-planar waveguide.
Step 4: the switch deformation of RF MEMS electrostatic drive caused by flexible base board is bent can influence to be attracted electricity in terms of two
Pressure, one is will lead to the initial spacing variation of the upper bottom crown of electrostatic drive switch after flexible base board bending and insertion switch ON state
The variation of capacitor, the second is characteristic impedance changes after will lead to co-planar waveguide bending after flexible base board bending.For RF
MEMS cantilever switch, the non-bending deformation of flexible base board, if cantilever beam has residual stress gradient, cantilever in the longitudinal direction
Girder construction can bend upwards (or downwards), RF MEMS cantilever switch ON state return loss are as follows:
Wherein,For the shape of cantilever beam buckling mode, w is the width of cantilever beam, and g opens for cantilever beam
Initial distance between the pole plate of pass, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition.
Further, buckling, RF MEMS cantilever beam occur for flexible base board bending deformation, radius of curvature R, cantilever beam structure
Switch ON state return loss are as follows:
Wherein,For the shape of cantilever beam buckling mode, w is the width of cantilever beam, and g opens for cantilever beam
Initial distance between the pole plate of pass, Z0For the characteristic impedance of co-planar waveguide under flexible base board bending condition, y (x) is flexible base board bending
Distance above and below condition Analysis of A Cantilever Beam Under between pole plate.
As shown in Fig. 2, the present invention is by taking RF MEMS two-end fixed beam as an example, in the present embodiment to each parameter value, RF
The material of MEMS two-end fixed beam electrostatic drive switch beam is gold, and flexible substrate material is liquid crystal polymer (LCP), the length of beam
L=600 μm, w=100 μm of the width of beam, t=2 μm of the thickness of beam, initial g=2 μm of spacing of upper bottom crown, the Young's modulus E of beam
=78Gpa, Poisson's ratio n=0.42.Assuming that above-mentioned RF MEMS two-end fixed beam electrostatic drive switch is initially present twin shaft residual pressure
Stress, the upward buckling of beam, h=0.5 μm of maximum flexion distance, as flexible base board is gradually curved, the curvature of substrate is gradually increased by 0
Greatly to 33.3m-1.It is obtained using method provided by the invention analysis solid based on RF MEMS both-end under flexible base board bending condition
Strutbeam electrostatic drive switchs return loss and the result of simulation is almost similar, and almost coincide with test result.
Method provided by the invention can be applied to complex environment space, include RF MEMS electrostatic drive switch and the double changes of flexible base board
Shape model is filled up both at home and abroad to the research blank of RF MEMS electrostatic drive switch microwave property model.
As shown in figure 3, the present invention is by taking RF MEMS cantilever beam as an example, in the present embodiment to each parameter value, RF MEMS
The material of cantilever beam electrostatic drive switch beam is gold, and flexible substrate material is liquid crystal polymer (LCP), the length L=150 μ of beam
M, w=100 μm of the width of beam, t=2 μm of the thickness of beam, the size of bottom crown are long L '=60 μm；Wide w '=150 μm, thickness by
CPW transmission line thickness determines.Assuming that above-mentioned cantilever beam structure electrostatic actuator is initially present the twin shaft remnants that size is 2.5MPa
Compression, as flexible base board is gradually curved, the curvature of substrate is gradually increased by 0 to 33.3m-1.Using side provided by the invention
The result based on flexible base board bending condition Analysis of A Cantilever Beam Under electrostatic drive switch return loss and simulation that method analysis obtains is almost
It is completely similar, and almost coincide with test result.Method provided by the invention can be applied to complex environment space, packet
Cantilever beam structure containing MEMS and flexible base board co-deflection model, while considering the shadow of MEMS cantilever beam structure residual stress gradient
It rings, fills up both at home and abroad to the research blank of MEMS cantilever beam structure flexible device model.
The foregoing is merely better embodiment of the invention, protection scope of the present invention is not with above embodiment
Limit, as long as those of ordinary skill in the art's equivalent modification or variation made by disclosure according to the present invention, should all be included in power
In the protection scope recorded in sharp claim.
Claims (6)
1. the RF MEMS electrostatic drive under a kind of bending condition based on flexible base board switchs microwave property analysis method, feature
It is: the following steps are included:
Establish the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, the RF MEMS electrostatic
Driving switch be two-end fixed beam structure perhaps the cantilever beam two-end fixed beam structure or cantilever beam by anchoring area with it is described
Flexible base board is connected；
Based on the deformation coupling model: after the flexible base board deformation, obtaining the RF MEMS electrostatic drive switch membrane bridge extremely
The spacing of the flexible base board；
Based on the deformed parameter value of the flexible base board, the microwave property model of RF MEMS electrostatic drive switch is rebuild；
The microwave property model of RF MEMS electrostatic drive switch based on the reconstruction obtains flexible base board bending to RF MEMS
The influence of electrostatic drive switch microwave property.
2. the RF MEMS electrostatic drive under the bending condition according to claim 1 based on flexible base board switchs microwave property
Analysis method, it is characterised in that: the deformation coupling model based on RF MEMS electrostatic drive switch Yu flexible base board co-deflection, institute
Two-end fixed beam or cantilever beam film bridge are stated after flexible base board bending to substrate spacing variable quantity are as follows:
Wherein, L is two-end fixed beam or cantilever beam beam length, and R is flexible base board bending curvature radius.
3. the RF MEMS electrostatic drive under the bending condition according to claim 2 based on flexible base board switchs microwave property
Analysis method, it is characterised in that: after flexible base board bending, co-planar waveguide signal wire and ground wire will not in a plane,
Impedance will change, and the characteristic impedance of co-planar waveguide after flexible base board bending can be obtained by flexible base board bending curvature radius.
4. the RF MEMS electrostatic drive under the bending condition according to claim 3 based on flexible base board switchs microwave property
Analysis method, it is characterised in that: the characteristic impedance of the co-planar waveguide are as follows:
Wherein:
5. the RF MEMS electrostatic drive under the bending condition according to claim 4 based on flexible base board switchs microwave property
Analysis method, it is characterised in that: influence of the analysis bending deformation to RF MEMS electrostatic drive switch microwave property, for RF
MEMS electrostatic drive paralleling switch switchs ON state capacitor to return loss (S11Parameter) influence are as follows:
Further, if S11≤ -10dB or ω CuZ0< < 2 can be obtained:
Wherein ω is the working frequency of RF MEMS electrostatic drive switch, CuTo switch the parallel connection electricity between co-planar waveguide signal wire
Hold, Z0For the characteristic impedance of co-planar waveguide.
6. the RF MEMS electrostatic drive under the bending condition according to claim 1 based on flexible base board switchs microwave property
Analysis method, it is characterised in that: RF MEMS electrostatic drive switchs ON state return loss are as follows:
Or
Wherein, formula (1) upward buckling, formula (2) downward buckling；W is the width of beam, and g is initial distance between switch pole plate, Z0It is soft
Property substrate bending condition under co-planar waveguide characteristic impedance, y (x) is electrostatic drive switch pole up and down under flexible base board bending condition
Distance between plate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811029817.6A CN109375096B (en) | 2018-09-04 | 2018-09-04 | RF MEMS electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
| PCT/CN2019/078320 WO2020048106A1 (en) | 2018-09-04 | 2019-03-15 | Rf mems electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811029817.6A CN109375096B (en) | 2018-09-04 | 2018-09-04 | RF MEMS electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109375096A true CN109375096A (en) | 2019-02-22 |
| CN109375096B CN109375096B (en) | 2021-06-29 |
Family
ID=65405154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811029817.6A Active CN109375096B (en) | 2018-09-04 | 2018-09-04 | RF MEMS electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109375096B (en) |
| WO (1) | WO2020048106A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020048106A1 (en) * | 2018-09-04 | 2020-03-12 | 东南大学 | Rf mems electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
| WO2023023976A1 (en) * | 2021-08-25 | 2023-03-02 | 京东方科技集团股份有限公司 | Radio frequency microelectronic mechanical switch and radio frequency device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910109A (en) * | 2003-09-09 | 2007-02-07 | 乔基姆·奥伯哈默 | Film actuator based mems device and method |
| CN106644205A (en) * | 2017-01-12 | 2017-05-10 | 东南大学 | Pressure sensor based on MEMS (Micro Electro Mechanical System) online microwave power sensor structure |
| CN106672894A (en) * | 2017-01-12 | 2017-05-17 | 东南大学 | Curvature sensor based on flexible substrate MEMS switch structure |
| US20170186578A1 (en) * | 2015-12-29 | 2017-06-29 | Synergy Microwave Corporation | High performance switch for microwave mems |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5437921B2 (en) * | 2010-06-08 | 2014-03-12 | 日本電信電話株式会社 | Inspection system |
| CN104993192A (en) * | 2015-07-29 | 2015-10-21 | 东南大学 | Thermally-driven RF MEMS switch |
| CN106932263A (en) * | 2017-04-07 | 2017-07-07 | 东南大学 | Two-end fixed beam mechanics parameter measuring method and device based on resonant frequency |
| CN107395156A (en) * | 2017-07-10 | 2017-11-24 | 池州睿成微电子有限公司 | A kind of RF MEMS tunable filters based on co-planar waveguide |
| CN109375096B (en) * | 2018-09-04 | 2021-06-29 | 东南大学 | RF MEMS electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
-
2018
- 2018-09-04 CN CN201811029817.6A patent/CN109375096B/en active Active
-
2019
- 2019-03-15 WO PCT/CN2019/078320 patent/WO2020048106A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1910109A (en) * | 2003-09-09 | 2007-02-07 | 乔基姆·奥伯哈默 | Film actuator based mems device and method |
| US20170186578A1 (en) * | 2015-12-29 | 2017-06-29 | Synergy Microwave Corporation | High performance switch for microwave mems |
| CN106644205A (en) * | 2017-01-12 | 2017-05-10 | 东南大学 | Pressure sensor based on MEMS (Micro Electro Mechanical System) online microwave power sensor structure |
| CN106672894A (en) * | 2017-01-12 | 2017-05-17 | 东南大学 | Curvature sensor based on flexible substrate MEMS switch structure |
Non-Patent Citations (2)
| Title |
|---|
| 苏锐: ""RF MEMS 开关的设计与优化"", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 * |
| 高晓峰: ""基于LCP基板加工工艺的RF MEMS开关器件的研究"", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020048106A1 (en) * | 2018-09-04 | 2020-03-12 | 东南大学 | Rf mems electrostatic drive switch microwave characteristic analysis method based on flexible substrate bending condition |
| WO2023023976A1 (en) * | 2021-08-25 | 2023-03-02 | 京东方科技集团股份有限公司 | Radio frequency microelectronic mechanical switch and radio frequency device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109375096B (en) | 2021-06-29 |
| WO2020048106A1 (en) | 2020-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103532430B (en) | Based on the preparation method of piezoelectricity with the flexible miniature energy collecting device of friction electric coupling | |
| Pelrine et al. | High-field deformation of elastomeric dielectrics for actuators | |
| CN101764532B (en) | Piezoelectric giant magnetostrictive combined wideband vibration energy collector | |
| CN102414854B (en) | Piezoelectric power generation device and power generation method using piezoelectric power generation device | |
| Cao et al. | Design and test of the MEMS coupled piezoelectric–electromagnetic energy harvester | |
| Maziz et al. | Top-down approach for the direct synthesis, patterning, and operation of artificial micromuscles on flexible substrates | |
| JP2013038755A (en) | Transducer module | |
| CN105723609B (en) | Trt | |
| CN109375096A (en) | A kind of RF MEMS electrostatic drive under the bending condition based on flexible base board switchs microwave property analysis method | |
| CN103368446B (en) | Electrostatic generator, manufacturing method thereof and self-driven sensing system | |
| Bakri-Kassem et al. | Novel High-$ Q $ MEMS Curled-Plate Variable Capacitors Fabricated in 0.35-$\mu {\hbox {m}} $ CMOS Technology | |
| Pelrine et al. | Electromechanical transduction effects in dielectric elastomers: actuation, sensing, stiffness modulation and electric energy generation | |
| CN109255178A (en) | A kind of MEMS cantilever beam structure mechanical analyzing method under the bending condition based on flexible base board | |
| CN103746602B (en) | A kind of Screw-type piezoelectric type energy collector preparation method | |
| Erlenbach et al. | Flexible-to-stretchable mechanical and electrical interconnects | |
| CN108242555B (en) | Self-adsorption flexible battery and preparation method thereof | |
| CN109446544A (en) | A kind of MEMS V-type girder construction mechanical analyzing method under the bending condition based on flexible base board | |
| Yoon et al. | A low contact resistance 4-terminal MEMS relay: theoretical analysis, design, and demonstration | |
| CN103269179A (en) | Piezoelectric plate and vibration energy collector | |
| Tian et al. | Analysis and test of a new MEMS micro-actuator | |
| CN110661450B (en) | Piezoelectric vibrator with non-linear differential geometric characteristics | |
| CN109271692B (en) | MEMS double-end clamped beam structure mechanics analysis method based on flexible substrate bending condition | |
| Lin et al. | Two-cavity MEMS variable capacitor for power harvesting | |
| CN109472113B (en) | Dynamic model analysis method for flexible MEMS electrostatic drive switch mechanics | |
| Wang et al. | Analyses of impedance matching for piezoelectric energy harvester with a resistive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |