CN109346537A - Select emitter battery print register method - Google Patents

Select emitter battery print register method Download PDF

Info

Publication number
CN109346537A
CN109346537A CN201811135963.7A CN201811135963A CN109346537A CN 109346537 A CN109346537 A CN 109346537A CN 201811135963 A CN201811135963 A CN 201811135963A CN 109346537 A CN109346537 A CN 109346537A
Authority
CN
China
Prior art keywords
table top
cell piece
center
center position
photoactive substance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201811135963.7A
Other languages
Chinese (zh)
Other versions
CN109346537B (en
Inventor
郝十峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Runyang New Energy Technology Co.,Ltd.
Original Assignee
SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd filed Critical SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority to CN201811135963.7A priority Critical patent/CN109346537B/en
Publication of CN109346537A publication Critical patent/CN109346537A/en
Application granted granted Critical
Publication of CN109346537B publication Critical patent/CN109346537B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Abstract

The present invention provides a kind of selection emitter battery print register method, it is related to the print field of crystal silicon solar batteries positive electricity grade, the selection emitter battery print register method are as follows: in posting a photoactive substance on table top, and taken pictures by camera and determine the position of the photoactive substance;One cell piece is sent to the table top by belt, one shading box of setting stops ambient light interference;The table top issues CCD light source, which claps around the cell piece, determines the center position of the cell piece;Printing equipment passes through cell piece center position on the center of the table top anchor point and the table top;Computer first passes through the offset of the center of the table top anchor point and the center position confirmation angle of the cell piece;Computer determines the area of the adjacent area between the cell piece and the photoactive substance;Calculate separately X-axis offset and Y-axis offset;Print head carries out alignment printing.

Description

Select emitter battery print register method
Technical field
The present invention relates to the print fields of crystal silicon solar batteries positive electricity grade more particularly to solar cell selective to emit Pole alignment methods.
Background technique
In current photovoltaic industry, the link for restricting conventional batteries transformation efficiency most importantly spreads and metallizes twice Process, this two procedures are the conflicts to condition each other.
In diffusing procedure, low doping concentration can reduce the recombination probability of minority carrier, and can carry out preferable table Face passivation, reduces the surface recombination probability of minority carrier, to reduce the reverse saturation current of battery, improves the open circuit of battery Voltage and short circuit current.In addition because closer to the surface of solar cell, the probability that photo-generated carrier generates is higher, and closer to expansion The collection rate of dissipating bind photo-generated carrier is higher, therefore shallow diffused junction can obtain high collection in the region of high carrier generation rate Rate improves the short circuit current of battery.
Metallize process, and the front and back of battery needs to print silver paste and aluminium paste, to need high surface concentration to obtain Good Ohmic contact, low surface dopant concentration make metal form high contact electricity with the contact portion of silicon when making electrode Resistance, and diffusion region sheet resistance is larger, also increases the resistance to photo-generated carrier, to further increase solar-electricity The series resistance in pond, reduces the fill factor of battery, finally makes the decrease in efficiency of battery.
Therefore, in traditional silicon solar cell, the concentration of diffusion will adapt to the requirement printed electrode, and usually require that diffusion There is higher doping concentration, under higher doping concentration, silicon chip surface Carrier recombination rate is higher, can reduce short circuit current Density, so that efficiency be made to decline.High-concentration dopant is used in electrode contact zone, uses low concentration doping in light absorption area.In reality How the area for the area and electrode contact zone that the area of coordination electrode contact zone and grid line cover is covered with grid line in the production of border The area of lid makes this area difference is smaller selective emitting stage (se) battery income will be made bigger, recent some manufacturers Reach this purpose by promoting the precision of printing equipment, but a large amount of old equipment, without this function, transformation needs more Big investment.
Summary of the invention
In view of this, providing a kind of exclusion external light source pair present invention aim to address above-mentioned the deficiencies in the prior art The interference of silk screen one camera can accurately also measure the selection emitter battery print register side of the position of silicon wafer with one camera Method.
The present invention solves technical solution used by above-mentioned the deficiencies in the prior art: a kind of selection emitter battery printing Alignment methods, this method comprises:
Step (1): it in posting a photoactive substance on table top, and is taken pictures by camera and determines the position of the photoactive substance;
Step (2): one cell piece is sent to the table top by belt, one shading box of setting stops ambient light interference;
Step (3): the table top issues CCD light source, which claps around the cell piece, determines the center position of the cell piece;
Step (4): printing equipment passes through cell piece center position on the center of the table top anchor point and the table top;
Step (5): computer first passes through the center of the table top anchor point and the center position confirmation angle of the cell piece Offset;
Step (6): computer determines the area of the adjacent area between the cell piece and the photoactive substance;
Step (7): X-axis offset and Y-axis offset are calculated separately;
Step (8): print head carries out alignment printing.
Compared to the prior art, selection emitter battery print register method of the invention is felt by being arranged on table top Stimulative substance, and the center for passing through the table top anchor point calculates the offset of angle with cell piece center position on the table top, And the area according to the adjacent area between cell piece and the photoactive substance, X-axis offset and Y-axis offset are calculated, is realized Laser selective emitter (SE) alignment printing, finds mark point without high-precision camera and realizes positioning, do not have secondary printing function The board of energy can also be superimposed selective emitter technology, improve the application range of new technology.
Detailed description of the invention
Fig. 1 is the schematic diagram of one embodiment of present invention selection emitter battery print register method.
Specific embodiment
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back Other technologies scheme from the spirit and scope of the present invention.
Referring to Fig. 1, the schematic diagram of one embodiment for invention selection emitter battery print register method, as schemed institute Show, this method packet are as follows:
Step (1): it in posting a photoactive substance 2 on table top 1, and is taken pictures by camera and determines the position of the photoactive substance 2, i.e. X Axis, Y-axis and Z axis;
Step (2): one cell piece 3 is sent to the table top by belt, one shading box of setting stops ambient light interference;
Step (3): the table top issues CCD light source, which claps around the cell piece 3, determines the center point of the cell piece 3 It sets;
Step (4): printing equipment passes through cell piece center point on the center (X, Y, Z) of the table top anchor point and the table top Set (X1, Y1, Z1);
Step (5): computer first passes through the center of the table top anchor point and the center position confirmation angle of the cell piece Offset Z;
Step (6): computer determines the difference in areas 4 of the adjacent area between the cell piece and the photoactive substance, difference in areas 5, face Product moment 6, difference in areas 7;
Step (7): calculating separately X-axis offset is (difference in areas 4- difference in areas 5)/160, and Y-axis offset is (difference in areas 6- area It is poor 5)/160;
Step (8): print head carries out alignment printing.
In this present embodiment, shading box is set around the camera and excludes interference of the external light source to silk screen one camera, is used One camera can accurately also measure the position of silicon wafer, so that screen printing apparatus be made to complete printing and re-expand area coincidence, reach To the purpose for promoting battery conversion efficiency.
It should be understood by those skilled in the art that the embodiment of the present invention and attached drawing of foregoing description be only used as citing and simultaneously Do not limit the present invention.The purpose of the present invention has been fully and effectively achieved.Function and structural principle of the invention is being implemented It shows and illustrates in example, under without departing from the principle, embodiments of the present invention can have any deformation or modification.

Claims (1)

1. a kind of selection emitter battery print register method, which is characterized in that this method comprises:
Step (1): it in posting a photoactive substance on table top, and is taken pictures by camera and determines the position of the photoactive substance;
Step (2): one cell piece is sent to the table top by belt, one shading box of setting stops the ambient light of the camera to be interfered;
Step (3): the table top issues CCD light source, which claps around the cell piece, determines the center position of the cell piece;
Step (4): printing equipment passes through cell piece center position on the center of the table top anchor point and the table top;
Step (5): computer first passes through the center of the table top anchor point and the center position confirmation angle of the cell piece Offset;
Step (6): computer determines the area of the adjacent area between the cell piece and the photoactive substance;
Step (7): X-axis offset and Y-axis offset are calculated separately;
Step (8): print head carries out alignment printing.
CN201811135963.7A 2018-09-28 2018-09-28 Selective emitter cell printing alignment method Active CN109346537B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811135963.7A CN109346537B (en) 2018-09-28 2018-09-28 Selective emitter cell printing alignment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811135963.7A CN109346537B (en) 2018-09-28 2018-09-28 Selective emitter cell printing alignment method

Publications (2)

Publication Number Publication Date
CN109346537A true CN109346537A (en) 2019-02-15
CN109346537B CN109346537B (en) 2020-10-20

Family

ID=65307038

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811135963.7A Active CN109346537B (en) 2018-09-28 2018-09-28 Selective emitter cell printing alignment method

Country Status (1)

Country Link
CN (1) CN109346537B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102001242A (en) * 2010-10-14 2011-04-06 吴江迈为技术有限公司 Printing deviation measuring method, printing method and printing device for solar cell plate
CN102364301A (en) * 2011-06-30 2012-02-29 常州天合光能有限公司 Method for measuring alignment precision of meshed boards
CN106935683A (en) * 2017-03-24 2017-07-07 广东工业大学 A kind of solar battery sheet SPEED VISION positioning and correction system and its method
CN108257186A (en) * 2018-01-18 2018-07-06 广州视源电子科技股份有限公司 Determining method and device, video camera and the storage medium of uncalibrated image

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102001242A (en) * 2010-10-14 2011-04-06 吴江迈为技术有限公司 Printing deviation measuring method, printing method and printing device for solar cell plate
CN102364301A (en) * 2011-06-30 2012-02-29 常州天合光能有限公司 Method for measuring alignment precision of meshed boards
CN106935683A (en) * 2017-03-24 2017-07-07 广东工业大学 A kind of solar battery sheet SPEED VISION positioning and correction system and its method
CN108257186A (en) * 2018-01-18 2018-07-06 广州视源电子科技股份有限公司 Determining method and device, video camera and the storage medium of uncalibrated image

Also Published As

Publication number Publication date
CN109346537B (en) 2020-10-20

Similar Documents

Publication Publication Date Title
CN102569438B (en) Solar cell capable of saving silver paste and preparation process thereof
CN102825933B (en) Screen printing method for solar cell, solar cell and preparation method for solar cell
CN109904249B (en) P-type PERC double-sided solar cell back pattern alignment printing method, preparation method and cell
CN101764179A (en) Manufacture method of selective front surface field N-type solar cell
US20140038347A1 (en) Manufacturing method of electrode of solar cell
CN105514183A (en) Method for preparing front electrode of crystalline silicon solar cell
CN112259621A (en) High-efficiency PERC solar cell and preparation method thereof
CN102376789A (en) Selective emitter solar battery and preparation method
CN105633177A (en) Crystalline silicon solar cell
CN113851410A (en) Battery piece printing alignment method
CN109888053B (en) P-type PERC double-sided solar cell alignment printing method, preparation method and cell
CN105679850A (en) Crystalline silicon solar cell
CN105529373A (en) Front surface electrode of crystalline silicon solar cell
CN106098851A (en) A kind of stepping method of crystal silicon solar energy battery
CN208970518U (en) Silicon wafer selective emitter aligning structure
CN105679849A (en) Crystalline silicon solar cell
CN105702755A (en) A positive electrode of a crystalline silicon solar cell
CN103022229B (en) A kind of method of diffusion making solar cell
CN203312314U (en) N type crystal silicon solar battery fully covered with aluminum back emitter junctions
CN109346537A (en) Select emitter battery print register method
CN103009789B (en) Solar cell sheet and printing screen thereof
CN209434198U (en) A kind of novel solar cell slices and component
CN105529374A (en) Positive electrode of crystalline silicon solar cell
CN105552145A (en) Crystalline silicon solar cell
CN203085565U (en) Novel solar battery positive electrode

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: Room 101, building 1, 58 Xiangjiang Road, Yancheng Economic and Technological Development Zone, Yancheng City, Jiangsu Province 224000

Patentee after: Jiangsu Runyang New Energy Technology Co.,Ltd.

Address before: 215300 20th floor, Dibao financial building, East Qianjin Road, Kunshan Development Zone, Suzhou City, Jiangsu Province

Patentee before: SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd.

CP03 Change of name, title or address