CN109346326A - A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block - Google Patents
A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block Download PDFInfo
- Publication number
- CN109346326A CN109346326A CN201811021136.5A CN201811021136A CN109346326A CN 109346326 A CN109346326 A CN 109346326A CN 201811021136 A CN201811021136 A CN 201811021136A CN 109346326 A CN109346326 A CN 109346326A
- Authority
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- China
- Prior art keywords
- tantalum
- block
- burning
- anode
- electrolytic capacitor
- Prior art date
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Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 72
- 239000003990 capacitor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000007787 solid Substances 0.000 title claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 238000000465 moulding Methods 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims abstract description 10
- 230000001070 adhesive effect Effects 0.000 claims abstract description 10
- 238000000748 compression moulding Methods 0.000 claims abstract description 6
- 239000011812 mixed powder Substances 0.000 claims abstract description 6
- 235000021355 Stearic acid Nutrition 0.000 claims description 5
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims description 5
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 5
- 239000008117 stearic acid Substances 0.000 claims description 5
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G2009/05—Electrodes or formation of dielectric layers thereon characterised by their structure consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
Abstract
The invention discloses a kind of manufacturing methods of non-solid tantalum electrolytic capacitor anode tantalum block, comprising the following steps: (1) selection is used for the molding tantalum powder of anode tantalum block；(2) tantalum powder selection adhesive is subjected to mixed powder and compression moulding；(3) anode tantalum block after molding is placed in pre-burning stove and carries out pre-burning, calcined temperature is 100 ± 20 DEG C~300 ± 20 DEG C, and burn-in time is 30 ± 10min~120 ± 10min；(4) this burning is carried out as requested, this burning temperature is 1200 ± 20 DEG C~2050 ± 20 DEG C, and sintering time is 20 ± 10min~60 ± 10min；The present invention is under conditions of anode tantalum core satisfaction effectively removes adhesive, by changing anode tantalum block calcined temperature, anode tantalum block oxygen content is realized after reducing pre-burning, can be reduced non-solid tantalum electrolytic capacitor by the anode tantalum block that this method manufactures and be formed rear leakage current value.
Description
Technical field
The invention belongs to non-solid tantalum electrolytic capacitor manufacturing technology fields, and in particular to a kind of non-solid electrolyte tantalum
The manufacturing method of capacitor anode tantalum block.
Background technique
With the development and deeply of the industrial revolution, the required precision of component is increasingly stringenter, mainly towards miniaturization,
The direction of lightness, high-voltage large-capacity is developed, this proposes bigger challenge, tantalum electrolytic capacitor for the technological break-through of tantalum capacitor
Device is widely used in each due to many excellent properties such as its is small in size, capacity is big, leakage current is small, low-loss, service life length
In kind civil and military electronic product.Anode tantalum block is the heart of tantalum capacitor, and the anode tantalum block of high quality is the longevity of tantalum capacitor
The guarantee of life and reliability, in the production process of tantalum capacitor, the size of parameter after anode tantalum block is formed often directly is closed
It is the quality to product, the size of the leakage current value after especially being formed is directly related to the quality to form rear oxidation film.Cause
This, for capacitor producer, how to manufacture the anode tantalum block of high quality is current urgent problem to be solved.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of sides of non-solid tantalum electrolytic capacitor anode tantalum block
Method, this method, by changing anode tantalum block calcined temperature, reduce pre- under conditions of anode tantalum core satisfaction effectively removes adhesive
Anode tantalum block oxygen content incrementss are realized after burning.
The present invention is achieved by following technical solution.
A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block, comprising the following steps:
(1) selection is used for the molding tantalum powder of anode tantalum block, and the specific volume of the tantalum powder is 5000~70000 μ FV/g；
(2) adhesive is selected to carry out mixed powder and compression moulding the tantalum powder in step (1)；
(3) anode tantalum block after molding is placed in pre-burning stove and carries out pre-burning, sintering temperature is 100 ± 20 DEG C~300 ± 20
DEG C, sintering time is 30 ± 10min~120 ± 10min；
(4) it requires to be sintered according to molded design list, sintering temperature is 1200 ± 20 DEG C~2050 ± 20 DEG C, when sintering
Between be 20 ± 10min~60 ± 10min；
Adhesive in the step (2) is the organic matters such as stearic acid or propylene carbonate.
The specific volume of tantalum powder is 20000 μ FV/g in the step (1).
Sintering temperature in the step (3) is 150 DEG C, sintering time 60min.
This burning temperature in the step (4) is 1550 DEG C, sintering time 20min.
The beneficial effects of the present invention are:
Compared with the prior art (calcined temperature is 500 DEG C), the present invention effectively removes adhesive in anode tantalum core satisfaction
Under the conditions of, by changing anode tantalum block calcined temperature, anode tantalum block oxygen content incrementss are realized after reducing pre-burning, by this
The anode tantalum block of method manufacture can reduce non-solid tantalum electrolytic capacitor and form rear leakage current value.
Specific embodiment
Technical solution of the present invention is further described below with reference to embodiment, but claimed range is not limited to institute
It states.
A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block, comprising the following steps:
(1) selection is used for the molding tantalum powder of anode tantalum block, and the specific volume of the tantalum powder is 5000~70000 μ FV/g；
(2) adhesive is selected to carry out mixed powder and compression moulding the tantalum powder in step (1)；
(3) anode tantalum block after molding is placed in pre-burning stove and carries out pre-burning, sintering temperature is 100 ± 20 DEG C~300 ± 20
DEG C, sintering time is 30 ± 10min~120 ± 10min；
(4) it requires to carry out this burnings according to molded design list, this burning temperature is 1200 ± 20 DEG C~2050 ± 20 DEG C, when sintering
Between be 20 ± 10min~60 ± 10min；
Adhesive in the step (2) is stearic acid or propylene carbonate.
The embodiment and effect that present invention be described in more detail by taking XX20000 tantalum powder and 25V120 μ F as an example below:
Embodiment one:
A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block, comprising the following steps:
(1) according to non-solid tantalum capacitor production principle, selection is used for the molding tantalum powder of anode tantalum block, the ratio of the tantalum powder
Holding is 20000 μ FV/g；
(2) tantalum powder carries out mixed powder and compression moulding with stearic acid；
(3) anode tantalum block after molding is placed in pre-burning stove and carries out pre-burning, calcined temperature is 500 DEG C, and burn-in time is
60min；Here 500 DEG C are industry production calcined temperature, it is therefore an objective to for being with sintering temperature of the invention in embodiment two
150 DEG C compare, to embody effect of the invention；
(4) this burning is carried out by technique requirement, sintering temperature is 1550 DEG C, sintering time 20min；
(5) it is tested with XX type product 25V120 μ F, uses the anode tantalum block produced according to above-mentioned steps, oxygen
Content is as shown in table 1, and the leakage current value for forming rear anode tantalum block by technique is as shown in table 2, and leakage current value is in 1.02~1.08 μ
Between A/min.
1 oxygen content of table
| Serial number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | Mean value |
| Oxygen content ppm | 2705 | 2698 | 2711 | 2703 | 2711 | 2712 | 2708 | 2706 | 2713 | 2705 | 2707 |
Under the conditions of 2 room temperature of table (25 DEG C), the leakage current value of anode tantalum block
| Serial number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
| I(μA)/min | 1.03 | 1.02 | 1.06 | 1.02 | 1.06 | 1.04 | 1.05 | 1.05 | 1.08 | 1.05 |
Embodiment two:
A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block, comprising the following steps:
(1) according to non-solid tantalum capacitor production principle, selection is used for the molding tantalum powder of anode tantalum block, the ratio of the tantalum powder
Holding is 20000 μ FV/g；
(2) tantalum powder carries out mixed powder and compression moulding with stearic acid；
(3) anode tantalum block after molding is placed in pre-burning stove and carries out pre-burning, sintering temperature is 150 DEG C, and burn-in time is
60min；
(4) this burning is carried out by technique requirement, sintering temperature is 1550 DEG C, sintering time 20min；
(5) it is tested with XX type product 25V120 μ F, uses the anode tantalum block produced according to above-mentioned steps, oxygen
Content is as shown in table 3, and the leakage current value for forming rear anode tantalum block by technique is as shown in table 4, and leakage current value is in 0.51~0.53 μ
Between A/min.
3 oxygen content of table
| Serial number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | Mean value |
| Oxygen content ppm | 2203 | 2205 | 2196 | 2212 | 2215 | 2207 | 2205 | 2206 | 2204 | 2201 | 2205 |
Under the conditions of 4 room temperature of table (25 DEG C), the leakage current value of anode tantalum block
| Serial number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
| I(μA)/min | 0.53 | 0.52 | 0.53 | 0.51 | 0.53 | 0.52 | 0.51 | 0.52 | 0.53 | 0.51 |
Above-described embodiment one and embodiment two are compared as can be seen that by changing anode tantalum block calcined temperature, drop
Anode tantalum block oxygen content is realized after low pre-burning, and the anode tantalum block of this method manufacture can reduce non-solid tantalum electrolytic capacitor
Leakage current value after formation.
Claims (5)
1. a kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block, it is characterised in that: the following steps are included:
(1) selection is used for the molding tantalum powder of anode tantalum block, and the specific volume of the tantalum powder is 5000~70000 μ FV/g；
(2) adhesive is selected to carry out mixed powder and compression moulding the tantalum powder in step (1)；
(3) anode tantalum block after molding is placed in pre-burning stove and carries out pre-burning, sintering temperature is 100 ± 20 DEG C~300 ± 20 DEG C, is burnt
The knot time is 30 ± 10min~120 ± 10min；
(4) it requires to carry out this burning according to molded design list, this burning temperature is 1200 ± 20 DEG C~2050 ± 20 DEG C, and sintering time is
20 ± 10min~60 ± 10min.
2. the manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block as described in claim 1, it is characterised in that: described
Adhesive in step (2) is stearic acid or propylene carbonate.
3. the manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block as described in claim 1, it is characterised in that: described
The specific volume of tantalum powder is 20000 μ FV/g in step (1).
4. the manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block as described in claim 1, it is characterised in that: described
Sintering temperature in step (3) is 150 DEG C, sintering time 60min.
5. the manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block as described in claim 1, it is characterised in that: described
Sintering temperature in step (4) is 1550 DEG C, sintering time 20min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811021136.5A CN109346326A (en) | 2018-09-03 | 2018-09-03 | A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811021136.5A CN109346326A (en) | 2018-09-03 | 2018-09-03 | A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block |
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| Publication Number | Publication Date |
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| CN109346326A true CN109346326A (en) | 2019-02-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811021136.5A Pending CN109346326A (en) | 2018-09-03 | 2018-09-03 | A kind of manufacturing method of non-solid tantalum electrolytic capacitor anode tantalum block |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696786A (en) * | 2020-05-19 | 2020-09-22 | 北京七一八友益电子有限责任公司 | Preparation method of high-voltage chip type solid electrolyte tantalum capacitor |
| CN113077989A (en) * | 2021-03-31 | 2021-07-06 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Preparation method of anode tantalum block of low-oxygen-content solid electrolyte tantalum capacitor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1427996A (en) * | 2000-03-23 | 2003-07-02 | 卡伯特公司 | Oxygen reduced niobium oxides |
| CN102513538A (en) * | 2011-12-23 | 2012-06-27 | 泰克科技(苏州)有限公司 | Method for sintering anode block of tantalum capacitor |
| CN102768906A (en) * | 2012-08-09 | 2012-11-07 | 中国振华（集团）新云电子元器件有限责任公司 | Method for manufacturing tantalum capacitor anode block through mixed powder in thermal field environment |
| CN103560008A (en) * | 2013-10-18 | 2014-02-05 | 中国振华（集团）新云电子元器件有限责任公司 | Adhesive removing technology for manufacturing anode block of tantalum capacitor |
| CN106158383A (en) * | 2015-04-01 | 2016-11-23 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of preparation method of the anode tantalum block reducing tantalum capacitor loss tangent |
| CN108091490A (en) * | 2017-12-12 | 2018-05-29 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Anode tantalum block and preparation method thereof |
-
2018
- 2018-09-03 CN CN201811021136.5A patent/CN109346326A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1427996A (en) * | 2000-03-23 | 2003-07-02 | 卡伯特公司 | Oxygen reduced niobium oxides |
| CN102513538A (en) * | 2011-12-23 | 2012-06-27 | 泰克科技(苏州)有限公司 | Method for sintering anode block of tantalum capacitor |
| CN102768906A (en) * | 2012-08-09 | 2012-11-07 | 中国振华（集团）新云电子元器件有限责任公司 | Method for manufacturing tantalum capacitor anode block through mixed powder in thermal field environment |
| CN103560008A (en) * | 2013-10-18 | 2014-02-05 | 中国振华（集团）新云电子元器件有限责任公司 | Adhesive removing technology for manufacturing anode block of tantalum capacitor |
| CN106158383A (en) * | 2015-04-01 | 2016-11-23 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of preparation method of the anode tantalum block reducing tantalum capacitor loss tangent |
| CN108091490A (en) * | 2017-12-12 | 2018-05-29 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Anode tantalum block and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111696786A (en) * | 2020-05-19 | 2020-09-22 | 北京七一八友益电子有限责任公司 | Preparation method of high-voltage chip type solid electrolyte tantalum capacitor |
| CN111696786B (en) * | 2020-05-19 | 2022-03-08 | 北京七一八友益电子有限责任公司 | Preparation method of high-voltage chip type solid electrolyte tantalum capacitor |
| CN113077989A (en) * | 2021-03-31 | 2021-07-06 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Preparation method of anode tantalum block of low-oxygen-content solid electrolyte tantalum capacitor |
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Application publication date: 20190215 |