CN109338472B - Method for eliminating YAG laser crystal tail cracking - Google Patents

Method for eliminating YAG laser crystal tail cracking Download PDF

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Publication number
CN109338472B
CN109338472B CN201811487162.7A CN201811487162A CN109338472B CN 109338472 B CN109338472 B CN 109338472B CN 201811487162 A CN201811487162 A CN 201811487162A CN 109338472 B CN109338472 B CN 109338472B
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crystal
stage
pulling
yag laser
tail
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CN109338472A (en
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沈思情
刘浦锋
张俊宝
陈猛
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Shanghai Chaosi Semiconductor Co.,Ltd.
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Shanghai Advanced Silicon Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)

Abstract

The invention relates to a method for eliminating YAG laser crystal tail cracking, which comprises the following steps: in the preparation process of the YAG laser crystal, the ending pulling is carried out in three stages, wherein in the first stage, the pulling speed is 0.5-2mm/min, and the pulling distance in the first stage accounts for 15-30% of the total length of the tail of the crystal; in the second stage, the pulling speed is 2.5-5mm/min, and the pulling distance in the second stage accounts for 30-40% of the total length of the tail part of the crystal; in the third stage, the pulling speed is 5-7mm/min, and the pulling distance in the third stage accounts for 40-55% of the total length of the tail part of the crystal. According to the invention, the speed in the drawing process in the ending stage is controlled in stages, so that the problem of cracking of the tail end of the crystal bar caused by uneven internal stress of the crystal bar in the ending stage of the YAG laser crystal is solved, the qualification rate of the tail part of the crystal bar can reach 100%, and the method has good economic benefits and application prospects.

Description

Method for eliminating YAG laser crystal tail cracking
Technical Field
The invention relates to the field of crystal preparation, in particular to a method for eliminating YAG laser crystal tail cracking.
Background
YAG, Yttrium aluminum garnet, of the formula Y3Al5O12Is composed of Y2O3And Al2O3The composite oxide produced by the reaction belongs to a cubic crystal system and has a garnet structure.
YAG series crystals are mainly used as laser crystal rods applied to solid lasers, and can be used for performing laser frequency conversion, expanding the wavelength of laser, modulating the intensity and the phase of the laser, completing holographic storage of laser signals, eliminating self-pumping phase conjugation of wave front domain variation and the like. The laser crystal bar is one of the photoelectric information functional data, is the primary material basis of photoelectronic skills, particularly laser skills, and the development degree of the laser crystal bar is closely related to the development of the laser skills. The development and use of laser crystal skills are one of the primary indicators for the high-tech development level of a country. With the continuous progress of laser skills, particularly solid laser skills, and the continuous expansion of the field of use and the addition of the amount of use, the use of YAG laser crystals is also expanding.
At present, the performance of YAG crystal is usually improved by doping, and commonly used doping elements include Yb, Ce, Nd and the like, for example, patents CN103074685A, CN108565666A, CN106252206A and the like all disclose the growth method of Nd doped YAG laser crystal, patents CN104357899A, CN107541212A and the like all disclose the material and method of Yb doped YAG laser crystal, CN108269889A, CN105198224A and the likeThe patent discloses a material and a method of Ce-doped YAG laser crystal, and CN104844001A discloses a Ce-doped YAG laser crystal3+、Tb3+A preparation method of YAG microcrystalline glass. The Nd-YAG crystal is the most mature and mainstream laser crystal at present, has the most excellent comprehensive performance, and occupies an important position in the field of solid laser application. More than 50% of all solid-state lasers all use neodymium-doped YAG (Nd: YAG) laser crystals, which are also the preferred materials for high-power solid-state lasers.
In the prior art, a Czochralski method is generally used for preparing YAG series laser crystals, and the Czochralski method can grow important gem crystals such as colorless sapphire, ruby, yttrium aluminum garnet, gadolinium gallium garnet, alexandrite, spinel and the like. The basic principle of the pulling method is as follows: the raw materials for forming the crystal are put in a crucible to be heated and melted, the melt is pulled by connecting seed crystals on the surface of the melt, atoms or molecules are rearranged on the interface between the seed crystals and the melt under the controlled condition, after the surface of the seed crystals is slightly melted, the seed crystal rod is pulled and rotated, the melt is in a supercooled state to be crystallized on the seed crystals, and cylindrical crystals grow in the continuous pulling and rotating processes.
At present, the process of preparing YAG laser crystal by the Czochralski method basically realizes automation, and steps of necking, shoulder expanding, equal-diameter growth and the like can be automatically carried out according to a set crystal growth program. However, the lifting and pulling ending stage after the isometric growth is finished still mainly depends on manual operation. The crystal bar has larger radial temperature gradient when being pulled and terminated, so that the stress at the tail part of the crystal bar is uneven, the tail end of the crystal bar is cracked, even the whole crystal bar is cracked, the qualification rate of products is reduced, and the production cost is improved.
At present, in the preparation process of YAG laser crystal, the cracking rate of crystal bar is about 15-40%, which is very unfavorable for enterprise production. Therefore, improvement on the prior art is needed to develop a process capable of effectively eliminating the YAG laser crystal tail cracking.
Disclosure of Invention
In order to solve the technical problem, the invention provides a method for eliminating the cracking of the tail part of the YAG laser crystal, which eliminates the cracking phenomenon of the tail end of a crystal bar at the ending stage of the YAG laser crystal and has good economic benefit and application prospect.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a method for eliminating YAG laser crystal tail cracking, which comprises the following steps: in the preparation process of the YAG laser crystal, the ending pulling is carried out in three stages, wherein in the first stage, the pulling speed is 0.5-2mm/min, and the pulling distance in the first stage accounts for 15-30% of the total length of the tail of the crystal; in the second stage, the pulling speed is 2.5-5mm/min, and the pulling distance in the second stage accounts for 30-40% of the total length of the tail part of the crystal; in the third stage, the pulling speed is 5-7mm/min, and the pulling distance in the third stage accounts for 40-55% of the total length of the tail part of the crystal.
Because the tail part of the YAG laser crystal (rod-shaped) is in a conical shape, a larger temperature gradient exists in the radial direction at the stage of pulling and ending, the pulling speed is not proper, the stress change is easily generated in the crystal bar, and the risk of cracking and even explosion of the crystal bar is increased. The method divides the ending pulling into three stages, ends the crystal bar at different pulling speeds, and the three stages are matched, so that the influence of nonuniform stress in the crystal bar caused by radial temperature gradient is overcome, and the problem that the tail end of the crystal bar is easy to crack is solved.
According to the invention, the first stage has a drawing speed of 0.5 to 2mm/min, which may be, for example, 0.5mm/min, 0.8mm/min, 1.0mm/min, 1.3mm/min, 1.5mm/min, 1.8mm/min or 2mm/min, and the specific values between the above values, are not exhaustive for reasons of space and simplicity.
According to the present invention, the first stage pulling distance is 15-30% of the total length of the tail portion of the crystal, for example, 15%, 18%, 20%, 23%, 25%, 28% or 30%, and the specific values therebetween are limited to space and are not exhaustive for the sake of brevity.
According to the invention, the pull rate of the second stage is 2.5-5mm/min, for example 2.5mm/min, 2.8mm/min, 3mm/min, 3.3mm/min, 3.5mm/min, 3.8mm/min, 4mm/min, 4.3mm/min, 4.5mm/min, 4.8mm/min or 5mm/min, and the specific values between the above values are limited to space and are not exhaustive for the sake of brevity.
According to the invention, the second-stage pull-up distance is 30-40% of the total length of the tail of the crystal, and may be, for example, 30%, 33%, 35%, 38% or 40%, and the specific values therebetween are limited to the space and for simplicity, and are not exhaustive.
According to the invention, the pull rate in the third stage is 5-7mm/min, for example 5mm/min, 5.3mm/min, 5.5mm/min, 5.8mm/min, 6mm/min or 7mm/min, and the specific values between these values are not exhaustive for reasons of space and simplicity.
According to the invention, the third stage pull-up distance is 40-55% of the total length of the tail of the crystal, for example 40%, 43%, 45%, 48%, 50%, 53% or 55%, and the specific values therebetween are limited to space and for brevity, and are not exhaustive.
In the process of carrying out the end-to-end pulling in three stages, when the pulling in each stage is finished and the pulling in the next stage is carried out, the pulling speed of each crystal bar at the critical position is still carried out according to the previous stage, for example, when the pulling in the first stage is finished and the pulling in the second stage is about to be carried out, the pulling speed of the crystal bar at the critical position in the first stage and the second stage is still 0.5-2mm/min, and the corresponding pulling in the second stage and the third stage is also carried out.
According to the invention, the YAG laser crystal is rod-shaped.
According to the invention, the diameter of the YAG laser crystal is 80-120mm, for example 80mm, 85mm, 90mm, 95mm, 100mm, 105mm, 110mm, 115mm or 120mm, and the specific values between the above values, which are limited to space and for the sake of brevity, are not exhaustive.
According to the invention, the length of the YAG laser crystal tail is 20-40mm, for example, 20mm, 23mm, 25mm, 28mm, 30mm, 33mm, 35mm, 38mm or 40mm, and the specific values between the above values are limited by space and for the sake of brevity, and the invention is not exhaustive.
According to the invention, after finishing the end-to-end pulling of the YAG laser crystal, the temperature is reduced to room temperature at the rate of 20-50 ℃/min.
As a preferable technical scheme, the preparation method of the YAG laser crystal comprises the following steps:
(1) according to Y3Al5O12The formula (I) is prepared by mixing the formula amount of Y2O3、Al2O3Mixing, optionally adding an oxide of the doping element to the mixture obtained;
(2) pressing the mixed material obtained in the step (1) into a cylindrical shape, and sintering to obtain a YAG polycrystalline cake material;
(3) heating and melting the YAG polycrystalline cake obtained in the step (2), and adding pure YAG seed crystals for crystal growth after the YAG polycrystalline cake is completely melted;
(4) and (3) automatically performing the steps of necking, shoulder expanding, equal-diameter growth and the like according to a set crystal growth program, and entering a final pulling stage after the equal diameter is finished.
In the step (1) of the invention, Y can be changed according to the requirement2O3、Al2O3The obtained YAG laser crystal is doped by adding oxides of Nd, Ce, Yb and other elements into the mixture, for example, when Nd is doped, a proper amount of Nd is correspondingly added2O3。
In the burdening process in the step (1), the purity of each initial raw material is more than or equal to 99.999 percent, and the raw materials are preburnt to remove H before burdening2O and CO2。
According to the invention, the pressure of the pressing process in step (2) is 100-200MPa, and may be, for example, 100MPa, 110MPa, 120MPa, 130MPa, 140MPa, 150MPa, 160MPa, 170MPa, 180MPa, 190MPa or 200MPa, and the values therebetween are limited by space and for the sake of brevity, and the invention is not exhaustive.
According to the present invention, the sintering temperature in step (2) is 1000-.
According to the invention, the sintering time in step (2) is 10-30h, for example 10h, 15h, 20h, 25h or 30h, and the values between the above values are limited by space and for the sake of brevity, and are not exhaustive.
According to the invention, the pressing in step (2) is carried out in a cold isostatic press, and the sintering is carried out in a muffle furnace.
According to the invention, in the step (3), the YAG polycrystalline cake is placed in an iridium crucible which is resistant to high temperature and does not deteriorate rapidly in an oxygen environment, and then the heating and melting are carried out in a medium-frequency induction heating mode.
According to the present invention, the heating rate in the heating and melting process in step (3) is 250-.
After the YAG polycrystalline cake in the step (3) of the invention is completely melted, the seed crystal is lowered into the melt, after 2-3 hours of observation, the optimum growth power is found, and then the automatic program is started to carry out crystal growth
The invention carries out high-temperature oxygen diffusion on the molten liquid in the YAG polycrystalline cake melting and crystal growing processes, and gradually fills oxygen vacancy on the crystal by utilizing the diffusion effect of oxygen, thereby eliminating the source of trapped electrons and improving the laser efficiency of the crystal. The mixed gas of oxygen and inert gas is used in the furnace during melting, wherein the concentration of the oxygen is 0.2-20%, and the concentration of the oxygen is controlled to be 0.1-0.4% during crystal growth, so that the deterioration influence of high oxygen concentration on the crucible can be reduced.
The processes of necking, shoulder expanding, equal-diameter growth and the like in the step (4) of the invention are all completed under the control of an automatic program.
According to the invention, the pulling rate during the constant diameter growth in step (4) is 0.5-5mm/h, for example 0.5mm/h, 1mm/h, 2.5mm/h, 3mm/h, 3.5mm/h, 4mm/h, 4.5mm/h or 5mm/h, and the values between the above values are not exhaustive for reasons of space and simplicity.
According to the invention, the crystal rotation speed during the constant diameter growth in the step (4) is 3-20r/min, such as 3r/min, 5r/min, 8r/min, 10r/min, 13r/min, 15r/min, 18r/min or 20r/min, and the values between the above values are limited to space and for the sake of brevity, and the invention is not exhaustive.
Compared with the prior art, the invention has at least the following beneficial effects:
(1) according to the invention, the speed in the drawing process in the ending stage is controlled in stages, so that the problem of cracking of the tail end of the crystal bar caused by uneven internal stress of the crystal bar in the ending stage of the YAG laser crystal is solved, and the qualification rate of the tail part of the crystal bar can reach 100%.
(2) The method provided by the invention can reduce the labor cost in the final pulling stage, improves the production efficiency and is suitable for industrial application.
Detailed Description
For the purpose of facilitating an understanding of the present invention, the present invention will now be described by way of examples. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
In order to ensure uniformity, the laser crystals involved in the embodiments of the present invention were prepared according to the following method:
(1) according to Y3Al5O12The formula (I) is prepared by mixing the formula amount of Y2O3、Al2O3Mixing;
(2) placing the mixed material obtained in the step (1) in a cold isostatic press, pressing the mixed material into a cylinder under the pressure of 200MPa, transferring the cylinder to a muffle furnace, and sintering the cylinder at 1300 ℃ for 20 hours to obtain YAG polycrystalline cake material;
(3) placing the YAG polycrystalline cake obtained in the step (2) into an iridium crucible, heating and melting in a medium-frequency induction furnace at the heating rate of 350 ℃/h, adding pure YAG seed crystals after completely melting, descending the seed crystals into the melt, observing for 2-3 hours, finding the optimal growth power, and starting an automatic program to grow crystals;
(4) and (3) automatically performing the steps of necking, shoulder expanding, equal-diameter growth and the like according to a set crystal growth program, and entering a final pulling stage after the equal diameter is finished.
Typical but non-limiting examples of the invention are:
example 1
After the YAG laser crystal enters a tail pulling stage, the tail pulling is carried out in three stages, wherein the first stage is carried out at the pulling speed of 1mm/min, and the pulling distance of the first stage accounts for 20% of the total length of the tail part of the crystal; in the second stage, the pulling speed is 3.5mm/min, and the pulling distance in the second stage accounts for 35 percent of the total length of the tail part of the crystal; in the third stage, the pulling speed is 6.5mm/min, and the pulling distance in the third stage accounts for 45 percent of the total length of the tail part of the crystal; after the end of the tailing, the crystals were cooled to room temperature at a rate of 23 ℃/min.
Example 2
After the YAG laser crystal enters a tail pulling stage, the tail pulling is carried out in three stages, wherein the first stage is carried out at the pulling speed of 2mm/min, and the pulling distance of the first stage accounts for 30% of the total length of the tail part of the crystal; in the second stage, the pulling speed is 5mm/min, and the pulling distance in the second stage accounts for 30 percent of the total length of the tail part of the crystal; in the third stage, the pulling speed is 7mm/min, and the pulling distance in the third stage accounts for 40 percent of the total length of the tail part of the crystal; after the end of the tailing, the crystal was cooled to room temperature at a rate of 40 ℃/min.
Example 3
After the YAG laser crystal enters a tail pulling stage, the tail pulling is carried out in three stages, wherein the first stage is carried out at the pulling speed of 0.5mm/min, and the pulling distance of the first stage accounts for 15% of the total length of the tail of the crystal; in the second stage, the pulling speed is 2.5mm/min, and the pulling distance in the second stage accounts for 40 percent of the total length of the tail part of the crystal; in the third stage, the pulling speed is 6mm/min, and the pulling distance in the third stage accounts for 45 percent of the total length of the tail part of the crystal; after the end of the tailing, the crystal was cooled to room temperature at a rate of 30 ℃/min.
Example 4
After the YAG laser crystal enters a tail pulling stage, the tail pulling is carried out in three stages, wherein the first stage is carried out at the pulling speed of 1.5mm/min, and the pulling distance of the first stage accounts for 25 percent of the total length of the tail of the crystal; in the second stage, the pulling speed is 4mm/min, and the pulling distance in the second stage accounts for 35 percent of the total length of the tail part of the crystal; in the third stage, the pulling speed is 6.5mm/min, and the pulling distance in the third stage accounts for 40 percent of the total length of the tail part of the crystal; after the end of the tailing, the crystal was cooled to room temperature at a rate of 20 ℃/min.
Example 5
After the YAG laser crystal enters a tail pulling stage, the tail pulling is carried out in three stages, wherein the first stage is carried out at the pulling speed of 0.8mm/min, and the pulling distance of the first stage accounts for 15% of the total length of the tail of the crystal; in the second stage, the pulling speed is 3mm/min, and the pulling distance in the second stage accounts for 30 percent of the total length of the tail part of the crystal; in the third stage, the pulling speed is 6.3mm/min, and the pulling distance in the third stage accounts for 55 percent of the total length of the tail part of the crystal; after the end of the tailing, the crystal was cooled to room temperature at a rate of 50 ℃/min.
Example 6
After the YAG laser crystal enters a tail pulling stage, the tail pulling is carried out in three stages, wherein the first stage is carried out at the pulling speed of 1.8mm/min, and the pulling distance of the first stage accounts for 25 percent of the total length of the tail of the crystal; in the second stage, the pulling speed is 4.5mm/min, and the pulling distance in the second stage accounts for 30 percent of the total length of the tail part of the crystal; in the third stage, the pulling speed is 6.8mm/min, and the pulling distance in the third stage accounts for 45 percent of the total length of the tail part of the crystal; after the end of the tailing, the crystal was cooled to room temperature at a rate of 20 ℃/min.
And (4) testing results: according to the method, 30 crystal bars are used as one group, the crystal bars in one group are respectively processed by adopting the methods provided by the embodiments 1-6, the cracking condition of the tail part of each group of the obtained crystal bars is detected, and the result shows that the crystal bars in each group have no cracking phenomenon, so that after the YAG laser crystal is subjected to ending and pulling by using the method provided by the invention, the risk of easy cracking of the bar can be effectively eliminated, the qualification rate of the tail part of the crystal bar is 100%, and the YAG crystal bars with more excellent performance are obtained.
The applicant states that the present invention is illustrated by the above examples to show the detailed process equipment and process flow of the present invention, but the present invention is not limited to the above detailed process equipment and process flow, i.e. it does not mean that the present invention must rely on the above detailed process equipment and process flow to be implemented. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

Claims (12)

1. A method for eliminating YAG laser crystal tail cracking is characterized by comprising the following steps: in the preparation process of the YAG laser crystal, the ending pulling is carried out in three stages, wherein in the first stage, the pulling speed is 0.5-2mm/min, and the pulling distance in the first stage accounts for 15-30% of the total length of the tail of the crystal; in the second stage, the pulling speed is 2.5-5mm/min, and the pulling distance in the second stage accounts for 30-40% of the total length of the tail part of the crystal; in the third stage, the pulling speed is 6-7mm/min, and the pulling distance in the third stage accounts for 40-55% of the total length of the tail part of the crystal;
the preparation method of the YAG laser crystal comprises the following steps:
(1) according to Y3Al5O12The formula (I) is prepared by mixing the formula amount of Y2O3、Al2O3Mixing, and adding an oxide of a doping element into the obtained mixture;
(2) pressing the mixed material obtained in the step (1) into a cylindrical shape, and sintering to obtain a YAG polycrystalline cake material;
(3) heating and melting the YAG polycrystalline cake obtained in the step (2), and adding pure YAG seed crystals for crystal growth after the YAG polycrystalline cake is completely melted;
(4) automatically necking, shoulder expanding, equal-diameter growth and the like according to a set crystal growth program, and entering a final pulling stage after the equal diameter is finished;
and after finishing the ending and pulling of the YAG laser crystal, reducing the temperature to room temperature at the speed of 20-50 ℃/min.
2. The method of claim 1, wherein the YAG laser crystal is rod-shaped.
3. The method of claim 1 or 2, wherein the diameter of the YAG laser crystal is 80-120 mm.
4. The method of claim 1 or 2, wherein the length of the YAG laser crystal tail is 20-40 mm.
5. The method of claim 1, wherein the doping element of step (1) is any one of Nd, Ce, or Yb.
6. The method as claimed in claim 1 or 2, wherein the pressure of the pressing process in step (2) is 100-200 MPa.
7. The method as claimed in claim 1 or 2, wherein the sintering temperature in step (2) is 1000-1400 ℃.
8. The method of claim 1 or 2, wherein the sintering time in step (2) is 10-30 h.
9. The method of claim 1 or 2, wherein the YAG polycrystalline cake is placed in an iridium crucible in the step (3), and then heated and melted by medium frequency induction heating.
10. The method as claimed in claim 1 or 2, wherein the temperature raising rate in the heating and melting process in the step (3) is 400 ℃/h and 250-.
11. The method of claim 1 or 2, wherein the pulling rate during the constant diameter growth in the step (4) is 0.5-5 mm/h.
12. The method according to claim 1 or 2, wherein the crystal rotation speed in the isometric growth process of the step (4) is 3-20 r/min.
CN201811487162.7A 2018-12-06 2018-12-06 Method for eliminating YAG laser crystal tail cracking Active CN109338472B (en)

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CN110512279B (en) * 2019-10-15 2020-06-02 宁夏银和新能源科技有限公司 Single crystal furnace ending method capable of improving ending success rate
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CN103422173A (en) * 2013-08-08 2013-12-04 巢湖市环宇光学技术有限公司 Growth method of yttrium aluminum garnet crystal doped with high-concentration neodymium
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