CN109330623A - The manufacturing method of ultrasonic sensor and ultrasonic sensor - Google Patents
The manufacturing method of ultrasonic sensor and ultrasonic sensor Download PDFInfo
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- CN109330623A CN109330623A CN201811183603.4A CN201811183603A CN109330623A CN 109330623 A CN109330623 A CN 109330623A CN 201811183603 A CN201811183603 A CN 201811183603A CN 109330623 A CN109330623 A CN 109330623A
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/02—Measuring pulse or heart rate
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/06—Measuring blood flow
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/08—Detecting organic movements or changes, e.g. tumours, cysts, swellings
- A61B8/0891—Detecting organic movements or changes, e.g. tumours, cysts, swellings for diagnosis of blood vessels
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
- A61B8/4494—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer characterised by the arrangement of the transducer elements
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- Heart & Thoracic Surgery (AREA)
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- Gynecology & Obstetrics (AREA)
- Vascular Medicine (AREA)
- Cardiology (AREA)
- Hematology (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
The present invention provides a kind of ultrasonic sensor, comprising: substrate；Ultrasonic wave sensed layer, the substrate are used to support the ultrasonic wave sensed layer；The ultrasonic wave sensed layer includes the piezoelectric layer being stacked and an at least electrode layer, and the ultrasonic wave sensed layer is for sending and receiving ultrasonic signal.Ultrasonic sensor of the invention realizes sending and receiving for ultrasonic signal by same ultrasonic wave sensed layer, sends layer and signal receiving layer it is not necessary that signal is respectively set, reduces the thickness of ultrasonic sensor.
Description
Technical field
The present invention relates to the manufacturing methods of a kind of ultrasonic sensor and ultrasonic sensor.
Background technique
The health perception of contemporary society, people itself generally improves, other than the great attention of work and rest, diet and exercise,
Regular physical examination is also essential.Ultrasonic examination is to pass through human body using the sound wave of ultra-high frequency, by different tissues pair
The degree of reflection of sound wave is different, after collecting these back waves, calculates via the precision of computer, shows the structure of in-vivo tissue
It makes, it is normal or and abnormal for doctor's judgement.
Currently, ultrasonic sensor has many advantages, such as that size is small, price is low, the safe medical imaging that has been widely used in is set
It is standby.So, existing ultrasonic sensor generally include the protective layer being stacked, signal receiving layer, substrate, signal send layer and
The multilayered structures such as soft layer keep the thickness of ultrasonic sensor larger, are unfavorable for the lightening of ultrasonic sensor.
Summary of the invention
In consideration of it, the present invention provides a kind of lesser ultrasonic sensor of thickness.
A kind of ultrasonic sensor, comprising: substrate；Ultrasonic wave sensed layer, the substrate are used to support the ultrasonic wave sense
Survey layer；The ultrasonic wave sensed layer includes the piezoelectric layer being stacked and an at least electrode layer, and the ultrasonic wave sensed layer is used for
Send and receive ultrasonic signal.
The present invention also provides a kind of manufacturing methods of ultrasonic sensor.
A kind of manufacturing method of ultrasonic sensor comprising:
One substrate is provided, the substrate is thin-film transistor array base-plate, on the substrate definition have induction zone and with institute
State the adjacent peripheral region of induction zone；
Mask is formed on substrate, the mask includes opaque area and transparent area, and the opaque area covers the base
The peripheral region of plate, the transparent area cover the induction zone of the substrate；
Piezoelectric polymer material is coated in the induction zone, the mask is removed, forms the piezoelectric layer for being located at the induction zone；
Form the electrode layer for covering the piezoelectric layer；
The piezoelectric layer and the electrode layer are as ultrasonic wave sensed layer, and the ultrasonic wave sensed layer is for sending and receiving
Ultrasonic signal.
A mother substrate is provided, the mother substrate includes multiple substrates, and the substrate is thin-film transistor array base-plate, each
Definition has induction zone and the peripheral region adjacent with the induction zone on the substrate；
Mask is formed on the mother substrate, the mask includes opaque area and transparent area, opaque area's covering
The peripheral region of each substrate, the transparent area cover the induction zone of each substrate；
Piezoelectric polymer material is coated in each induction zone, the mask is removed, is formed and be located at each induction zone
Piezoelectric layer；
The electrode layer for covering each piezoelectric layer is formed, each piezoelectric layer is with corresponding electrode layer as ultrasonic wave
Sensed layer, the ultrasonic wave sensed layer is for sending and receiving ultrasonic signal；
The mother substrate is cut along the edge of the multiple substrate, forms multiple ultrasonic sensors.
Compared to the prior art, ultrasonic sensor of the invention realizes ultrasonic signal by same ultrasonic wave sensed layer
It sends and receives, sends layer and signal receiving layer it is not necessary that signal is respectively set, reduce the thickness of ultrasonic sensor.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram of the ultrasonic sensing device of first embodiment of the invention.
Fig. 2 is the diagrammatic cross-section that Fig. 1 is splitted along II-II line.
Fig. 3 is the schematic diagram of the section structure of the ultrasonic sensor of second embodiment of the invention.
Fig. 4 is the manufacturing flow chart of the ultrasonic sensor of first embodiment of the invention.
Fig. 5~Fig. 8 is that the structure for each manufacturing process step of ultrasonic sensor for manufacturing first embodiment of the invention is shown
It is intended to.
Fig. 9 is the manufacturing flow chart of the ultrasonic sensor of second embodiment of the invention.
Figure 10 is the structural schematic diagram for manufacturing the step S905 of ultrasonic sensor of second embodiment of the invention.
Figure 11 is the manufacturing flow chart for the ultrasonic sensor that the present invention one changes embodiment.
Figure 12~16 are the structures of each manufacturing process step for the ultrasonic sensor that the manufacture present invention one changes embodiment
Schematic diagram.
Main element symbol description
The present invention that the following detailed description will be further explained with reference to the above drawings.
Specific embodiment
The present embodiment is illustrated by taking wearable ultrasonic sensing device as an example, still, is not limited in wearable ultrasound
Wave sensing device, in other examples, ultrasonic sensing device of the invention can for suitable for the technical program its
The ultrasonic sensing device of his type.Specifically, it will illustrate of the invention surpass by taking wearable ultrasonic sensing device as an example below
The specific embodiment of sound wave sensing apparatus.
Referring to FIG. 1, Fig. 1 is the stereoscopic schematic diagram of the ultrasonic sensing device 100 of first embodiment of the invention.Such as Fig. 1
Shown, in the present embodiment, ultrasonic sensing device 100 is wearable ultrasonic sensing device.Ultrasonic sensing device 100 wraps
Ultrasonic sensor 10 is included, ultrasonic sensor 10 can be used for monitoring blood flow, blood vessel elasticity, heart rate and the heart of measurand
The physiological parameters such as contractility, the technology can use Doppler effect.
In the present embodiment, ultrasonic sensor 10 is patch type, can preferably fit closely the skin in user,
Make ultrasonic sensor 10 diagnosis by it, the air gap is not influenced between skin, it is thus possible to more accurately diagnose.
Referring to FIG. 2, Fig. 2 is the diagrammatic cross-section that Fig. 1 is splitted along II-II line.In the present embodiment, ultrasonic sensor
10 include protective layer 11, substrate 12, ultrasonic wave sensed layer 13 and the soft layer 14 being cascading.Wherein, substrate 12 is used for
Ultrasonic wave sensed layer 13 is supported, further, substrate 12 and ultrasonic wave sensed layer 13 are connected and fixed by adhesive layer 15.Ultrasound
Wave sensor 10 is in use, soft layer 14 is used for the skin attachement with user.Protective layer 11 can protect ultrasonic wave sensed layer
13。
As shown in Fig. 2, ultrasonic wave sensed layer 13 includes piezoelectric layer 131 and an at least electrode layer 132.Ultrasonic wave sensed layer 13
For sending and receiving ultrasonic signal.In the present embodiment, ultrasonic sensor 10 further includes and 13 electricity of ultrasonic wave sensed layer
Property connection control unit (not shown), control unit Time-sharing control ultrasonic wave sensed layer 13 makes 13 timesharing of ultrasonic wave sensed layer
Realize the function of sending and receiving received ultrasonic signal, the signal it is not necessary that transmission ultrasonic signal is respectively set sends layer and connects
The signal receiving layer for receiving ultrasonic signal, can reduce the thickness of ultrasonic sensor 10.
As shown in Figure 2, the surface of the substrate 12 could be formed with the thin film transistor (TFT) (thin of multiple matrix arrangements
Film transistor, TFT) 121, multiple thin film transistor (TFT) 121 forms thin film transistor (TFT) array and ultrasonic wave sensed layer 13
Electrical couplings.Thin film transistor (TFT) array is for receiving the electric signal from ultrasonic wave sensed layer 13, and the electric signal that will be received
Image or data information are converted to for user's reading.In present embodiment, substrate 12 is flexible material, such as silica gel, modeling
Expect (such as polyimides (PI) or polyethylene terephthalate (PET)) etc., in favor of ultrasonic sensor 10 and uses
Person's fitting.In other embodiments, substrate 12 has certain radian, so as to make ultrasonic sensor 10 and user's
It is detected position (such as arm) to be relatively bonded, the material of substrate 12 can be glass, sapphire, and but not limited to this.
When using ultrasonic sensor 10, user first pastes the side that ultrasonic sensor 10 is equipped with soft layer 14
It is placed in skin surface, such as is worn in wrist, and opens the power switch of ultrasonic sensor 10, at this point, ultrasonic wave senses
Layer 13 issues ultrasonic wave, and ultrasonic wave is sent to human body and enters subcutaneous tissue and have portion of ultrasonic sound wave to reflex to ultrasound from subcutaneous tissue
Wave sensed layer 13 is made the ultrasonic intensity reflected that corresponding variation occur by subcutaneous tissue of hand's state change, thus generation pair
The electric signal of user's blood flow is answered to be coupled to thin film transistor (TFT) 121.Thin film transistor (TFT) 121 converts electrical signals to image information
Or data information saves to memory or is sent directly to external read device.
In one embodiment, it is illustrated so that ultrasonic sensor 10 is to the detection of blood flow as an example, ultrasonic wave sensed layer
13 illustratively produce the ultrasonic wave that frequency is 2.5MHz, and ultrasonic wave is penetrated to intravascular, is reflected back by the blood cell in blood
Ultrasonic sensor 10.At this point, since there is relative motion to be back to ultrasonic wave according to Doppler effect for ultrasonic wave and blood cell
The frequency of the ultrasonic wave of sensed layer 13 is changed.For example, the variable quantity of the frequency of ultrasonic wave can be 0~4kHz, also
It is that pass back to the frequency of the ultrasonic wave of ultrasonic wave sensed layer 13 can be 2.5MHz ± 4kHz.At this point, the change of the frequency of ultrasonic wave
Change amount is defined as audio signal, analyzes audio signal, can analyze the parameter for obtaining blood flow.
Piezoelectric layer 131 can be poly- vinylidene difluoride (Polyvinylidene Fluoride, PVDF), piezoelectric ceramics zirconium
The piezoelectric materials such as lead titanates (PZT), vinylidene and trifluoro-ethylene copolymer (PVDF-TrFE).In the present embodiment, piezoelectric layer
For vinylidene and trifluoro-ethylene copolymer (PVDF-TrFE).
Electrode layer 132 can be selected from tin indium oxide, zinc oxide, poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid, carbon and receive
One of mitron, silver nanowires and graphene, but not limited to this.
Soft layer 14 for example can be latex.Ultrasonic sensor 10 can be tight with the skin of user by soft layer 14
Closely connected conjunction and influence the air gap of the diagnosis not by it between skin of ultrasonic sensor 10, it is thus possible to it is more acurrate
Ground diagnosis.
Protective layer 11 is also material flexible, it is ensured that ultrasonic sensor 10 is generally flexible, and can fit in makes
The skin of user.
In the present embodiment, adhesive layer 15 can be anisotropy conductive viscose, and the charge that piezoelectric layer 131 generates can pass through
Adhesive layer 15 is transferred to thin film transistor (TFT) 121.
For convenience, the component symbol of following embodiment continues to use the component symbol of first embodiment, identical structure
Or details are not described herein for the description of function.
Referring to FIG. 3, Fig. 3 is the schematic diagram of the section structure of the ultrasonic sensor 10 of second embodiment of the invention.This reality
The difference for applying the ultrasonic sensor 10 of example and the ultrasonic sensor 10 of first embodiment is: in the present embodiment, described
Ultrasonic wave sensed layer 13 includes multiple mutually independent sensing units 130, and each sensing unit 130 includes the piezoelectricity being stacked
Layer 131 and electrode layer 132.Multiple sensing units 130 respectively send ultrasonic wave, to form beam forming (beam forming) mould
Formula.Under the beam forming mode, for a sensing unit 130, the ultrasonic wave and the two adjacent sensings that send
Ultrasonic wave transmitted by unit 130, which is weighted, to be retransmited, and narrow launching beam is formed, to enhance ultrasonic wave sensed layer 13
Whole transmission signal, correspondingly also enhances the signal strength of ultrasonic wave sensed layer 13 received.
Please referring to Fig. 4~8, Fig. 4 is the manufacturing flow chart of the ultrasonic sensor 10 of first embodiment of the invention, Fig. 5~
Fig. 8 is the structural schematic diagram for manufacturing each manufacturing process step of ultrasonic sensor 10 of first embodiment of the invention.Manufacture is originally
The method of the ultrasonic sensor 10 of invention first embodiment includes:
Step S401: such as Fig. 5, a substrate 12 is provided, substrate 12 is TFT (thin film transistor (TFT)) array substrate；It cleans and does
Dry substrate 12；Definition has induction zone 121 and the peripheral region 122 adjacent with induction zone 121 on substrate 12.
In the present embodiment, the surface of substrate 12 could be formed with thin film transistor (TFT) (the thin film of multiple matrix arrangements
Transistor, TFT) 121 (as shown in Figure 2).
Step S402: such as Fig. 6, forming mask 16 on the substrate 12, and mask 16 includes opaque area 161 and transparent area 162,
Opaque area 161 covers the peripheral region 122 of substrate 12, and transparent area 162 covers the induction zone 121 of substrate 12.
In the present embodiment, 162 hollow out of the transparent area setting of mask 16, so that light can penetrate transparent area 162.
In the present embodiment, mask 16 is the strippable mask 16 for covering 12 surface of substrate, but not limited to this.At other
In embodiment, mask 16 can also be can be by the photoresist of etching removal, or is metal cover.
Step S403: such as Fig. 7, piezoelectric polymer material (such as PVDF-TrFE copolymer) is coated in induction zone 121, is removed
Mask 16 forms the piezoelectric layer 131 for being located at induction zone 121.
In the present embodiment, coating piezoelectric polymer material (such as PVDF-TrFE copolymer) is after induction zone 121, also
Including the soft baking piezoelectric polymer material, to reduce the concentration of residual solvent in piezoelectric polymer material, prevent from forming bubble knot
Crystalline substance improves adhesive force and prevents it from dissolving in other coating process；Piezoelectric polymer material is crystallized and made annealing treatment later, with
And polarized piezoelectric polymer material, improve the performance for being formed by piezoelectric layer 131.
Before forming piezoelectric layer 131, the method for manufacturing the ultrasonic sensor 10 of first embodiment of the invention further includes
Adhesive layer 15 (such as Fig. 2) is formed on induction zone 21.After forming adhesive layer 15, on surface of the adhesive layer 15 far from substrate 12
Upper formation piezoelectric layer 131.In the present embodiment, adhesive layer 15 is anisotropy conductive viscose.
Step S404: such as Fig. 8, the electrode layer 132 of covering piezoelectric layer 131 is formed；Piezoelectric layer 131 and 132 conduct of electrode layer
The ultrasonic wave sensed layer 13 of ultrasonic sensor 10, ultrasonic wave sensed layer 13 is for sending and receiving ultrasonic signal.
The method for manufacturing the ultrasonic sensor 10 of first embodiment of the invention further includes in the formation of peripheral region 122 and electrode
Layer 132 be electrically connected cabling (not shown), and substrate 12 far from ultrasonic wave sensed layer 13 side formed protective layer 11,
Soft layer 14 is formed far from the side of substrate 12 in ultrasonic wave sensed layer 13.In the present embodiment, ultrasonic sensor 10 is patch
Cloth type, protective layer 11, substrate 12, ultrasonic wave sensed layer 13 and soft layer 14 are flexible.
It should be understood that in other embodiments, ultrasonic sensor 10 can be inflexible curved surface sensor.Protection
Layer 11 can be the other materials such as glass, plastics, and protective layer 11 passes through in-mold decoration forming (IMD, In-Mold
Decoration) technology is combined with the other elements such as substrate 12 and ultrasonic wave sensed layer 13.
Fig. 9~10 is please referred to, Fig. 9 is the manufacturing flow chart of the ultrasonic sensor 10 of second embodiment of the invention, Figure 10
It is the structural schematic diagram for manufacturing the step S905 of ultrasonic sensor 10 of second embodiment of the invention.
Manufacture the step S901~S904 and the manufacture present invention first of the ultrasonic sensor 10 of second embodiment of the invention
Step S401~S404 of the ultrasonic sensor 10 of embodiment is similar, and details are not described herein.In the present embodiment, this hair is manufactured
The method of the ultrasonic sensor 10 of bright second embodiment further include:
Step S905: as shown in Figure 10, after the electrode layer 132 for forming covering piezoelectric layer 131, ultrasonic wave sense is patterned
Layer 13 is surveyed, multiple mutually independent sensing units 130 are formed.
In the present embodiment, each sensing unit 130 includes the piezoelectric layer 131 and electrode layer 132 being stacked.Multiple senses
It surveys unit 130 and respectively sends ultrasonic wave, to form beam forming (beam forming) mode.Under the beam forming mode,
Ultrasonic wave transmitted by the ultrasonic wave sent for a sensing unit 130 and adjacent two sensing units 130 into
Row weighting retransmits, and forms narrow launching beam, to enhance the whole transmission signal of ultrasonic wave sensed layer 13, correspondingly
Enhance the signal strength of ultrasonic wave sensed layer 13 received.
Figure 11~16 is please referred to, Figure 11 is the manufacturing flow chart for the ultrasonic sensor 10 that the present invention one changes embodiment.
Figure 12~16 are the structural schematic diagrams of each manufacturing process step for the ultrasonic sensor 10 that the manufacture present invention one changes embodiment.
In the present embodiment, ultrasonic sensor 10 can be by batch micro operations, and the specific method is as follows:
Step S1101: such as Figure 12, a mother substrate 120, cleaning and dry mother substrate 120 are provided；Wherein, mother substrate 120 wraps
Include multiple substrates 12, substrate 12 is TFT (thin film transistor (TFT)) array substrate, on each substrate 12 definition have induction zone 121 and with
The adjacent peripheral region 122 of induction zone 121.
Step S1102: such as Figure 13, mask 16 is formed on mother substrate 120, mask 16 includes opaque area 161 and hollow out
The transparent area 162 of setting, opaque area 161 cover the peripheral region 122 of each substrate 12, and transparent area 162 covers each base
The induction zone 121 of plate 12.
Step S1103: such as Figure 14, piezoelectric polymer material (such as PVDF-TrFE copolymer) is coated in each induction zone
121, mask 16 is removed, the piezoelectric layer 131 for being located at each induction zone 121 is formed.
In the present embodiment, coating piezoelectric polymer material (such as PVDF-TrFE copolymer) is after induction zone 121, also
Including soft baking piezoelectric polymer material, to reduce the concentration of residual solvent in piezoelectric polymer material, prevent from forming bubble crystallization, mention
High adhesion force and prevent it from dissolving in other coating process；The piezoelectric polymer material is crystallized and made annealing treatment later, with
And polarized piezoelectric polymer material, improve the performance for being formed by piezoelectric layer 131.
Before forming piezoelectric layer 131, the method for manufacturing the ultrasonic sensor 10 of first embodiment of the invention further includes
Adhesive layer 15 (such as Fig. 2) is formed on induction zone 21.After forming adhesive layer 15, on surface of the adhesive layer 15 far from substrate 12
Upper formation piezoelectric layer 131.In the present embodiment, adhesive layer 15 is anisotropy conductive viscose.
Step S1104: such as Figure 15, the electrode layer 132 of covering piezoelectric layer 131 is formed；Each piezoelectric layer 131 and corresponding electricity
Pole layer 132 is used as ultrasonic wave sensed layer 13, and ultrasonic wave sensed layer 13 is for sending and receiving ultrasonic signal；
Step S1105: such as Figure 16, mother substrate 120 is cut along the edge of multiple substrates 12, forms multiple ultrasonic sensors
10。
It should be understood that manufacture the present embodiment ultrasonic sensor 10 method further include peripheral region 122 formed with
The cabling (not shown) that electrode layer 132 is electrically connected, and protection is formed far from the side of ultrasonic wave sensed layer 13 in substrate 12
Layer 11 forms soft layer 14 far from the side of substrate 12 in ultrasonic wave sensed layer 13.
The above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although implementing referring to preferable to the present invention
Be described in detail, those skilled in the art should understand that, can modify to technical solution of the present invention or
Equivalent replacement, without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. a kind of ultrasonic sensor characterized by comprising
Substrate；
Ultrasonic wave sensed layer, the substrate are used to support the ultrasonic wave sensed layer；
The ultrasonic wave sensed layer includes the piezoelectric layer being stacked and an at least electrode layer, and the ultrasonic wave sensed layer is for sending out
It send and received ultrasonic signal.
2. ultrasonic sensor as described in claim 1, it is characterised in that: the ultrasonic sensor further includes that control is single
Member, ultrasonic wave sensed layer described in described control unit Time-sharing control send and receive ultrasonic signal.
3. ultrasonic sensor as described in claim 1, it is characterised in that: the ultrasonic wave sensed layer includes multiple mutually only
Vertical sensing unit, each sensing unit include the piezoelectric layer and at least one electrode layer.
4. ultrasonic sensor as described in claim 1, it is characterised in that: the ultrasonic sensor further includes surpassing with described
The soft layer that sound wave sensed layer is stacked.
5. ultrasonic sensor as described in claim 1, it is characterised in that: the substrate is flexible material.
6. a kind of manufacturing method of ultrasonic sensor comprising:
One substrate is provided, the substrate is thin-film transistor array base-plate, on the substrate definition have induction zone and with the sense
Answer the peripheral region that area is adjacent；
Mask is formed on substrate, the mask includes opaque area and transparent area, and the opaque area covers the substrate
Peripheral region, the transparent area cover the induction zone of the substrate；
Piezoelectric polymer material is coated in the induction zone, the mask is removed, forms the piezoelectric layer for being located at the induction zone；
Form the electrode layer for covering the piezoelectric layer；
The piezoelectric layer and the electrode layer are as ultrasonic wave sensed layer, and the ultrasonic wave sensed layer is for sending and receiving ultrasound
Wave signal.
7. the manufacturing method of ultrasonic sensor as claimed in claim 6, in which: forming the electrode for covering the piezoelectric layer
After layer, the ultrasonic wave sensed layer is patterned, forms multiple mutually independent sensing units.
8. the manufacturing method of ultrasonic sensor as claimed in claim 6, in which: in coating piezoelectric polymer material in the sense
After answering area, the soft baking piezoelectric polymer material crystallizes and makes annealing treatment the piezoelectric polymer material.
9. the manufacturing method of ultrasonic sensor as claimed in claim 8, in which: before forming the piezoelectric layer, in institute
It states and forms adhesive layer on induction zone, the piezoelectric layer is formed in side of the adhesive layer far from the substrate.
10. a kind of manufacturing method of ultrasonic sensor comprising:
A mother substrate is provided, the mother substrate includes multiple substrates, and the substrate is thin-film transistor array base-plate, each described
Definition has induction zone and the peripheral region adjacent with the induction zone on substrate；
Mask is formed on the mother substrate, the mask includes opaque area and transparent area, and opaque area's covering is each
The peripheral region of the substrate, the transparent area cover the induction zone of each substrate；
Piezoelectric polymer material is coated in each induction zone, the mask is removed, forms the pressure for being located at each induction zone
Electric layer；
The electrode layer for covering each piezoelectric layer is formed, each piezoelectric layer is sensed with corresponding electrode layer as ultrasonic wave
Layer, the ultrasonic wave sensed layer is for sending and receiving ultrasonic signal；
The mother substrate is cut along the edge of the multiple substrate, forms multiple ultrasonic sensors.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811183603.4A CN109330623A (en) | 2018-10-11 | 2018-10-11 | The manufacturing method of ultrasonic sensor and ultrasonic sensor |
| TW107136620A TW202015262A (en) | 2018-10-11 | 2018-10-17 | Ultrasonic sensor and method for making ultrasonic sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811183603.4A CN109330623A (en) | 2018-10-11 | 2018-10-11 | The manufacturing method of ultrasonic sensor and ultrasonic sensor |
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Cited By (1)
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| WO2022061897A1 (en) * | 2020-09-28 | 2022-03-31 | 京东方科技集团股份有限公司 | Flexible sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI747556B (en) * | 2020-10-15 | 2021-11-21 | 馗鼎奈米科技股份有限公司 | Method for polarizing piezoelectric film |
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| CN207182323U (en) * | 2017-09-12 | 2018-04-03 | 南昌欧菲生物识别技术有限公司 | Display module and electronic installation |
| CN207182330U (en) * | 2017-09-12 | 2018-04-03 | 南昌欧菲生物识别技术有限公司 | Electronic equipment |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022061897A1 (en) * | 2020-09-28 | 2022-03-31 | 京东方科技集团股份有限公司 | Flexible sensor |
| CN114585891A (en) * | 2020-09-28 | 2022-06-03 | 京东方科技集团股份有限公司 | Flexible sensor |
| US20220354461A1 (en) * | 2020-09-28 | 2022-11-10 | Boe Techology Group Co., Ltd. | Flexible sensor |
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| TW202015262A (en) | 2020-04-16 |
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