CN109327201A - A kind of resonance structure SAW filter - Google Patents
A kind of resonance structure SAW filter Download PDFInfo
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- CN109327201A CN109327201A CN201811422077.2A CN201811422077A CN109327201A CN 109327201 A CN109327201 A CN 109327201A CN 201811422077 A CN201811422077 A CN 201811422077A CN 109327201 A CN109327201 A CN 109327201A
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- Prior art keywords
- resonance structure
- acoustic wave
- wave resonance
- filter according
- surface acoustic
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- 230000009467 reduction Effects 0.000 claims abstract description 24
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 13
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 29
- 229910052744 lithium Inorganic materials 0.000 abstract description 29
- 238000002955 isolation Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000006378 damage Effects 0.000 abstract description 2
- 230000000737 periodic effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- AWJDQCINSGRBDJ-UHFFFAOYSA-N [Li].[Ta] Chemical compound [Li].[Ta] AWJDQCINSGRBDJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000006138 lithiation reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- IBXOPEGTOZQGQO-UHFFFAOYSA-N [Li].[Nb] Chemical compound [Li].[Nb] IBXOPEGTOZQGQO-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
Abstract
The present invention relates to a kind of surface acoustic wave resonance Structure Filters, carry out isolation reduction treatment on the piezoelectric chip surface of lithium tantalate or lithium columbate crystal, and resonator element electrode is formed on reducing zone.Destruction of the piezo-electric crystal pyroelectric effect to resonator element periodic electrode lines is eliminated using the piezoelectric chip surface of reduction, simultaneously, it is therefore prevented that the decrease being electrically isolated between resonator element caused by the full surface reduction processing of chip.
Description
Technical field
The present invention relates to a kind of resonance structure SAW filters.
Background technique
Now in the base station and mobile terminal of radio communication, make for radio frequency reception/transmitting unit filter to be more
With SAW filter, and resonance structure filter is its primary structure form.Resonance structure type SAW filter
It is that the multiple SAW resonator units made on the piezoelectric chip with piezoelectric effect are electrically connected, resonator element
It is made of periodic electrodes (interdigital transducer IDT and reflecting grating) and bus electrode.In piezoelectric material, lithium tantalate or lithium niobate
Crystal due to biggish electromechanical coupling factor, it can be achieved that the filter characteristic of the low decaying of broadband.
In high-frequency sound surface wave filter, superfine metal electrode lines are easy to be discharged by wafer surface accumulation of static electricity
Cause to burn, therefore, the piezoelectric chip of high-frequency element mostly uses reduction method to handle now, to improve wafer surface conductivity
Eliminate pyroelectric effect, the reliability hidden danger for avoiding Electro-static Driven Comb from bringing.
As field of radio frequency communication is to 5G era development, the centre frequency of used acoustic surface wave filter device is increasingly
Height, it is also more stringent to the performance requirement of piezo-electric crystal substrate.Since the lattice defect in piezoelectric crystal material will affect sound table
Surface wave transmission performance increases excess loss, therefore in order to reduce the high-frequency loss of SAW device, it is desirable that crystals lattice defect
To lack as far as possible.
Piezoelectric crystal material used in SAW device is commonly the congruent niobic acid using Czochralski grown at present
The chip that lithium, lithium tantalate are processed.Nearby wafer surface in the effective workspace of surface acoustic wave, the chemical composition of material are same
Ingredient lithium tantalate (CLT) or congruent lithium niobate (CLN).And since the lithium tantalum ratio or Li/Nb ratio of CLT or CLN are only 0.486, no
Meet the chemical formula ratio (can accurately be measured with x-ray diffraction method or microscopic Raman analytic approach) of 1:1.The content of lithium is insufficient, brilliant
Piece surface is there are more lithium vacancy defect, and excessive lithium vacancy defect declines the mechanical-electric coupling ability of piezoelectric material, in turn
Lead to the disadvantage for the performances differences such as the insertion loss of the SAW filter produced is big, Out-of-band rejection is small.But near-stoichiometric
The lithium niobate of ratio, lithium tantalate wafer are difficult to grow due to the crystal of major diameter, and it is brilliant to be difficult to see 3 cun or more batch produce in the market
Piece.
In open source information, rich lithiumation is carried out to wafer surface using gas-liquid equilibrium means of transportation (VTE) and is handled, in chip
It is upper to form one layer of rich lithium layer, so that the chemical composition of wafer surface is close to stoichiometric ratio, to improve the electromechanics of wafer material
Coupling ability improves the performance of SAW filter.
But currently used rich lithium method treatment process is implemented to the full surface of piezoelectric chip, will cause device heat resistanceheat resistant and releases
The reduction of electric energy power, partial offset reduction chip bring benefit.How to take into account mechanical-electric coupling ability and electric energy power is released in heat resistanceheat resistant
It is the problem for implementing the manufacture of high-performance high-frequency SAW filter.
Summary of the invention
In order to solve the shortcomings of the prior art, the present invention provides a kind of resonance structure sound surfaces that insertion loss is low
Wave filter.
One of present invention resonance structure SAW filter, comprising: piezoelectric chip is arranged on piezoelectric chip surface
Multiple resonator elements and electrical connection metal electrode,
The piezoelectric chip is the congruent lithium niobate for using Czochralski grown, the wafer of monocrystalline lithium tantalate processing and fabricating；
The piezoelectric chip is the reduction chip by reduction treatment；
At least one rich lithium surface district has been made on the piezoelectric chip surface reduction layer；
At least one resonator element is produced in rich lithium surface district.
The lithium niobium component ratio of lithium niobate crystal chip richness lithium surface district is greater than 0.486, and less than 0.5；Lithium tantalate wafer richness lithium table
The lithium tantalum component ratio in face area is greater than 0.486, and less than 0.5.
According to IEC standard, lithium niobate crystal chip bulk conductivity are as follows: (1.0 * 10-12 ~ 1.0* 10 -8) S/cm, lithium tantalate
Chip bulk conductivity are as follows: (1.0*10-13~ 1.0*10-10) S/cm.
Preferably, all resonator elements are produced in rich lithium surface district.The resonator element being directly electrically connected
Electrical connection metal electrode structure, can also be produced in rich lithium surface district.
Preferably, the rich lithium surface district where the resonator element of indirect electrical connection is not connected with.
Preferably, rich lithium surface district, can be used silica as the separation layer for making rich lithium surface district technique.
Resonance structure SAW filter resonator element, metal electrode are that single metal or multiple layer metal are constituted
's.The metal generally used is Al, Cu or Al/Cu.
Preferably, piezoelectric chip be equipped with multiple resonator elements and electrical connection metal electrode structure above production have it is more
Layer dielectric.
Preferably, multilayer dielectricity film bottom is silica.As temperature-compensating；To reduce filter out-of-band interference,
Silicon oxide film surface is graduation.
Preferably, multilayer dielectric film top layer is silicon nitride.In addition to as filter frequencies fine tuning, can also increase device can
By property.
Beneficial effects of the present invention: congruent lithium niobate lithium tantalate piezoelectric chip surface richness lithium processing technique advantage is being obtained
Meanwhile electric energy power is released in the device heat resistanceheat resistant for maintaining surface reduction technology, optimizes the performance of radio-frequency filter: reducing insertion damage
Consumption promotes Out-of-band rejection, ensure that the reliability of filter.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of resonance structure SAW filter.
Fig. 2 is piezoelectric chip resonator cell electrode structural schematic diagram.
Fig. 3 is the schematic diagram of the section structure of surface acoustic wave resonance Structure Filter.
Fig. 4 is the fabrication process flow figure of resonance structure SAW filter.
Fig. 5 is the structural schematic diagram of resonance structure SAW filter in embodiment 1.
Fig. 6 is the structural schematic diagram of resonance structure SAW filter in embodiment 2.
Marked in the figure: 1, piezoelectric chip, 2, reduction zone, 3, the area Fu Li, 4, resonator element electrode, 5, silicon dioxide layer,
6, silicon nitride layer, S1, reduction piezoelectric chip, S2, barrier layer and graphical, S3, rich lithium processing, S4, resonator element electricity
Pole manufacture, S5, deposit silicon dioxide layer simultaneously planarize, S6, deposit silicon nitride layer.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings, but this should not be interpreted as to above-mentioned theme of the invention
Range be only limitted to above-described embodiment.
As shown in Figure 1, a kind of isolation area Fu Li of resonance structure SAW filter and cuing open for resonator element electrode
Face schematic diagram makes the area You Fuli 3, and resonator element below the resonator element electrode 4 on reduction 1 surface of piezoelectric chip
Between be isolation；Make the barrier layer of rich lithium treatment process in piezoelectric chip surface deposition silica, with lithography and etching side
Legal system makees figure, exposes the surface for needing rich lithiumation part, then carries out rich lithium processing, shape by high temperature solid-state richness lithiation
At the isolation area Fu Li.
As shown in Fig. 2, resonator is that the formation of resonator element electrode 4 is manufactured on piezoelectric chip 1, resonator element electricity
The reflecting grating and bus electrode of IDT and both sides that pole is made of intermediate interdigitated form.Resonator element electrode using Al, Cu or
The production of the metals such as its alloy, fine lines are processed with light lithography, then produce electrode pattern with etching method or stripping method.
As shown in figure 3, resonance structure SAW filter includes the area Fu Li 3, resonator element electrode 4 and offer temperature
The dielectric layer of compensation forms, and dielectric layer is divided into two parts: one is silica (5), is deposited using sputtering method, and its table
Face needs to planarize；The other is silicon nitride (6), for improving layer dielectric reliability, and is used for the fine tuning of filter frequencies,
It can be deposited with sputtering method.
A kind of surface acoustic wave resonance Structure Filter of the invention can use following two embodiment with mode above
Implemented:
Embodiment 1:
Using the congruent lithium tantalate of Czochralski grown (LiTaO3) crystal, tantalic acid is produced by processes such as cutting, grinding, polishings
Lithium chip, and chip obtains reduction chip by reduction treatment；
Then chip is cleaned；
Then silicon dioxide blocking layer is formed with sputtering method, thickness is set as 2 microns；
Lithography and etching method is reused, the airbreak figure for manufacturing rich lithium region is formed；
Followed by carrying out rich lithiumation to chip using rich lithiation process, when rich lithiumation carries out sheet mode using piece, wherein brilliant
Piece face, which contains rich lithium material coating, accompanies and attends to piece, and between the two every 1mm, 550 DEG C of rich lithium temperature keeps the temperature 150 hours；
After the completion of rich lithiumation, chip is cleaned, the pollution such as removal disintegrating slag, particle；
Then multiple groups resonator element electrode pattern is manufactured into structure such as Fig. 5 on the area Fu Li corresponding region using photoetching process
It is shown；
Finally in wafer surface deposit for the silicon dioxide layer of temperature-compensating and for the silicon nitride layer of fine tuning.
Embodiment 2:
Congruent lithium niobate (LiNbO3) crystal is formed using czochralski method, produces niobic acid by processes such as cutting, grinding, polishings
Lithium chip, and chip obtains reduction chip by reduction treatment,
Then chip is cleaned,
Then silicon dioxide blocking layer being formed with sputtering method, thickness is set as 2 microns,
Lithography and etching method is reused, the airbreak figure for manufacturing rich lithium region is formed,
Followed by carrying out rich lithiumation to chip using rich lithium method, when rich lithiumation carries out sheet mode using piece, wherein chip is just
It accompanies and attends to piece to containing rich lithium material coating, between the two every 1mm, 1100 DEG C of rich lithium temperature keeps the temperature 100 hours,
After the completion of rich lithiumation, chip is cleaned, the pollution such as removal disintegrating slag, particle,
Then multiple groups resonator element electrode pattern is manufactured into structure such as Fig. 6 on the area Fu Li corresponding region using photoetching process
It is shown,
Finally in wafer surface deposit for the silicon dioxide layer of temperature-compensating and for the silicon nitride layer of fine tuning.
Claims (10)
1. a kind of surface acoustic wave resonance Structure Filter, comprising: piezoelectric chip, multiple resonators that piezoelectric chip surface is arranged in
Unit and electrical connection metal electrode, it is characterized in that:
The piezoelectric chip is the lithium niobate for using Czochralski grown, the wafer of monocrystalline lithium tantalate processing and fabricating；
At least one reduction surface district has been made on the piezoelectric chip surface；
At least one resonator element is produced in reduction surface district；
Reduction surface district where the resonator element of indirect electrical connection is not connected with.
2. surface acoustic wave resonance Structure Filter according to claim 1, it is characterized in that: all resonator elements are made
Make in reduction surface district.
3. surface acoustic wave resonance Structure Filter according to claim 1, it is characterized in that: the resonator list being directly electrically connected
The electrical connection metal electrode of member is produced in reduction surface district.
4. surface acoustic wave resonance Structure Filter according to claim 1, it is characterized in that: the reduction table on piezoelectric chip surface
Face area, the separation layer using silica as production reduction surface district technique.
5. surface acoustic wave resonance Structure Filter according to claim 1, it is characterized in that: the metal electrode of resonator element
It is that single metal or multiple layer metal are constituted.
6. surface acoustic wave resonance Structure Filter according to claim 5, it is characterized in that: the metal electrode of resonator element
It is what Al, Cu or Al/Cu were constituted.
7. surface acoustic wave resonance Structure Filter according to claim 1, it is characterized in that: further include: it is produced on piezo crystals
Multilayer dielectric film above the multiple resonator elements of on piece and electrical connection metal electrode structure.
8. surface acoustic wave resonance Structure Filter according to claim 7, it is characterized in that: the bottom of multilayer dielectric film is one
Determine the silica of thickness.
9. surface acoustic wave resonance Structure Filter according to claim 8, it is characterized in that: silicon oxide film surface is graduation
's.
10. surface acoustic wave resonance Structure Filter according to claim 7, it is characterized in that: the top layer of multilayer dielectric film is
Certain thickness silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811422077.2A CN109327201A (en) | 2018-11-27 | 2018-11-27 | A kind of resonance structure SAW filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811422077.2A CN109327201A (en) | 2018-11-27 | 2018-11-27 | A kind of resonance structure SAW filter |
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| CN109327201A true CN109327201A (en) | 2019-02-12 |
Family
ID=65257880
Family Applications (1)
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|---|---|---|---|
| CN201811422077.2A Pending CN109327201A (en) | 2018-11-27 | 2018-11-27 | A kind of resonance structure SAW filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1741378A (en) * | 2004-08-27 | 2006-03-01 | 京瓷株式会社 | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
| JP2011135245A (en) * | 2009-12-24 | 2011-07-07 | Panasonic Corp | Elastic wave device, manufacturing method thereof, and electronic device using the same |
| CN102668376A (en) * | 2009-11-26 | 2012-09-12 | 株式会社村田制作所 | Piezoelectric device and method for manufacturing piezoelectric device |
| CN104577243A (en) * | 2014-11-24 | 2015-04-29 | 北京化工大学 | Method for recovering lithium resource from lithium-ion-containing solution by using lithium ion carrier |
| CN106100601A (en) * | 2016-05-31 | 2016-11-09 | 中电科技德清华莹电子有限公司 | A kind of FBAR using ultra-thin piezoelectric single crystal to make |
| US20160359468A1 (en) * | 2014-03-31 | 2016-12-08 | Murata Manufacturing Co., Ltd. | Elastic wave device |
| CN107620125A (en) * | 2017-09-30 | 2018-01-23 | 中电科技德清华莹电子有限公司 | A kind of Darkening process method of lithium tantalate or lithium niobate crystal chip |
| CN107681190A (en) * | 2016-08-01 | 2018-02-09 | 北京好风光储能技术有限公司 | The bipolar structure body and battery core of a kind of high-voltage battery |
-
2018
- 2018-11-27 CN CN201811422077.2A patent/CN109327201A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1741378A (en) * | 2004-08-27 | 2006-03-01 | 京瓷株式会社 | Surface acoustic wave device and manufacturing method therefor, and communications equipment |
| CN102668376A (en) * | 2009-11-26 | 2012-09-12 | 株式会社村田制作所 | Piezoelectric device and method for manufacturing piezoelectric device |
| JP2011135245A (en) * | 2009-12-24 | 2011-07-07 | Panasonic Corp | Elastic wave device, manufacturing method thereof, and electronic device using the same |
| US20160359468A1 (en) * | 2014-03-31 | 2016-12-08 | Murata Manufacturing Co., Ltd. | Elastic wave device |
| CN104577243A (en) * | 2014-11-24 | 2015-04-29 | 北京化工大学 | Method for recovering lithium resource from lithium-ion-containing solution by using lithium ion carrier |
| CN106100601A (en) * | 2016-05-31 | 2016-11-09 | 中电科技德清华莹电子有限公司 | A kind of FBAR using ultra-thin piezoelectric single crystal to make |
| CN107681190A (en) * | 2016-08-01 | 2018-02-09 | 北京好风光储能技术有限公司 | The bipolar structure body and battery core of a kind of high-voltage battery |
| CN107620125A (en) * | 2017-09-30 | 2018-01-23 | 中电科技德清华莹电子有限公司 | A kind of Darkening process method of lithium tantalate or lithium niobate crystal chip |
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