CN109324369A - A kind of production technology of plane waveguiding device - Google Patents
A kind of production technology of plane waveguiding device Download PDFInfo
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- CN109324369A CN109324369A CN201811515362.9A CN201811515362A CN109324369A CN 109324369 A CN109324369 A CN 109324369A CN 201811515362 A CN201811515362 A CN 201811515362A CN 109324369 A CN109324369 A CN 109324369A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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Abstract
The invention discloses a kind of production technologies of plane waveguiding device, comprising the following steps: using silicon wafer as matrix, silicon wafer upper and lower surfaces with one layer of high temperature silica film of duration；Then one layer of TEOS film is deposited in the silica surface for being located at lower layer by CVD deposition method, then deposits one layer of TEOS film in the silica surface for being located at upper layer；It is made annealing treatment；One layer of silicon oxynitride film is deposited on the surface for being located at the TEOS film on upper layer；Then it anneals；One layer of silicon oxynitride film is deposited again as waveguide core layer on the surface of silicon oxynitride film；One layer of TEOS film is deposited on the surface of waveguide core layer, then deposits layer of silicon dioxide film on the surface of TEOS film, one layer of TEOS film, re-annealing are then deposited on silicon dioxide film.The invention has the benefit that production technology of the present invention, prepared using silicon oxynitride as material a kind of with high index and the good plane waveguiding device of index of refraction homogeneity.
Description
Technical field
The present invention relates to semiconductor device fabrication process technical fields, and in particular to a kind of production work of plane waveguiding device
Skill.
Background technique
Planar waveguide-type optical splitter is a kind of integrated waveguide optical power fluctuation equipment based on quartz base plate, has volume
It is small, the features such as operating wavelength range is wide, high reliablity, light splitting, good uniformity, local side is connected in optical-fiber network especially suitable for having no chance
With terminal device and realize the branch of optical signal.Planar optical waveguide device includes substrate, the under-clad layer that substrate surface is arranged in, sets
Set under-clad layer surface waveguide core layer and be covered on the protective layer on waveguide core layer surface.It is described in planar optical waveguide device
Waveguide core layer is germanium-doped silica film for the optical property for guaranteeing planar optical waveguide device, and waveguide core layer is relative to lower packet
Layer needs higher refractive index, and needs to have preferable index of refraction homogeneity.And in order to improve waveguide core layer relative to lower packet
The refractive index of layer, needs to improve the additional amount of germanium in waveguide core layer, but the additional amount of germanium improve meeting so that waveguide core layer folding
Penetrate the reduction of rate uniformity, therefore, how guarantee while making waveguide core layer refractive index with higher relative to under-clad layer
Waveguide core layer has preferable index of refraction homogeneity, is one urgent problem to be solved of plane waveguiding device production field.
Summary of the invention
The object of the present invention is to provide a kind of with high index and the good plane waveguiding device of index of refraction homogeneity
Production technology.
A kind of production technology of plane waveguiding device, comprising the following steps:
(1) using silicon wafer as matrix, silicon wafer upper and lower surfaces with one layer of high temperature silica film of duration；Then lead to
It crosses CVD deposition method and deposits one layer of TEOS film in the silica surface for being located at lower layer, then in the silica surface for being located at upper layer
Deposit one layer of TEOS film；
(2) TEOS film is made annealing treatment；
(3) one layer of silicon oxynitride film is deposited on the surface for being located at the TEOS film on upper layer；Then silicon wafer is annealed；
(4) one layer of silicon oxynitride film is deposited again as waveguide core layer on the surface of silicon oxynitride film；
(5) one layer of TEOS film is deposited on the surface of waveguide core layer, then deposits layer of silicon dioxide film on the surface of TEOS film,
Then one layer of TEOS film, re-annealing are deposited on silicon dioxide film.
Further, in step (1), the silicon wafer with a thickness of 720-725um；The silicon dioxide film with a thickness of 2-
3um；The TEOS film with a thickness of 10-15um.By the method for heat buffering in the long layer of silicon dioxide film in the surface of silicon wafer, this
The adhesive force of silicon wafer substrate Yu Si oxide attached thereto can be improved in layer silicon dioxide film.
CVD deposition method refers to the gas phase reaction under high temperature, it is characterised in that: high-melting-point substances can synthesize at low temperature, analysis
The form of substance is that monocrystalline, polycrystalline, film etc. are a variety of out, coating can be not only carried out on substrate, but also can be in powder
Surface covering.
TEOS, ethyl orthosilicate can be used for manufacturing chemical resistant coating and heat-resisting paint, hot investment casting are used for, as sand mold
Binder, can anti-corrosion waterproof with the metal surface of silester steam treatment, it can also be used to manufacture heat-resisting, chemicals-resistant painting
Material.
One layer of TEOS film first is deposited in the silica surface of lower layer, to reduce the stress of silicon wafer, is then being located at upper layer
Silica surface deposit one layer of TEOS film, prevent light to be leaked in silicon base.
Further, in step (2), the environment of the silicon wafer at 800-1100 DEG C being annealed into TEOS film is deposited with
In, anneal 50-70min.Annealing carries out densification to TEOS film.
Further, in step (3), depositing a layer thickness on the surface of TEOS film by the method for PECVD is 50-
The silicon oxynitride film of 100nm, then 800-1100 DEG C at a temperature of make annealing treatment 50-70min.
Further, in step (4), depositing a layer thickness in silicon oxynitride film surface by the method for PECVD is 1-2um
Silicon oxynitride film, and control the silicon oxynitride film refractive index be 1.490-1.510.
Further, in step (5), one layer of TEOS film being deposited in waveguide core layer with a thickness of 75-85nm.This layer
The deposition of TEOS is that silicon oxynitride film is damaged or removes in order to prevent.
Further, in step (5), the silica that a layer thickness is 2-4um is deposited on TEOS film by PECVD
Film.
Further, in step (5): depositing a layer thickness on silicon dioxide film by the method for CVD is 8-12um thick
TEOS film.This layer of TEOS film is as outsourcing material layer.
Further, described to be annealed into the 50-70min that anneals under conditions of temperature is 100-700 DEG C in step (5).
The invention has the benefit that a kind of production technology of plane waveguiding device of the present invention, is with silicon oxynitride
Material is prepared a kind of with high index and the good plane waveguiding device of index of refraction homogeneity.
Specific embodiment
Embodiment one
A kind of production technology of plane waveguiding device, comprising the following steps:
(1) using silicon wafer as matrix, silicon wafer upper and lower surfaces with one layer of high temperature silica film of duration；Then lead to
It crosses CVD deposition method and deposits one layer of TEOS film in the silica surface for being located at lower layer, then in the silica surface for being located at upper layer
Deposit one layer of TEOS film；
(2) TEOS film is made annealing treatment；
(3) one layer of silicon oxynitride film is deposited on the surface for being located at the TEOS film on upper layer；Then silicon wafer is annealed；
(4) one layer of silicon oxynitride film is deposited again as waveguide core layer on the surface of silicon oxynitride film；
(5) one layer of TEOS film is deposited on the surface of waveguide core layer, then deposits layer of silicon dioxide film on the surface of TEOS film,
Then one layer of TEOS film, re-annealing are deposited on silicon dioxide film.
Embodiment two
A kind of production technology of plane waveguiding device, comprising the following steps:
It (1) with duration a layer thickness is 2um in the upper and lower surfaces of silicon wafer using the silicon wafer of 720um thickness as matrix
High temperature silica film, to improve the adhesive force of silicon wafer substrate Yu Si oxide attached thereto；Then pass through CVD deposition method
The TEOS film that a layer thickness is 10um is deposited in the silica surface for being located at lower layer, then in the silica surface for being located at upper layer
Deposit the TEOS film that a layer thickness is 10um；To reduce the stress of silicon wafer, light is prevented to be leaked in silicon base；
(2) TEOS film is made annealing treatment into 50min in 800 DEG C of environment, densification is carried out to TEOS film；
(3) silicon oxynitride film that a layer thickness is 50nm is deposited by PEVCD method on the surface for being located at the TEOS film on upper layer；
Then 800 DEG C at a temperature of make annealing treatment 50min；
(4) silicon oxynitride film that a layer thickness is 1um is deposited again by the method for PECVD on the surface of silicon oxynitride film
As waveguide core layer；And the refractive index for controlling the waveguide core layer is 1.490-1.510；
(5) the TEOS film that a layer thickness is 80nm is deposited on the surface of waveguide core layer, silicon oxynitride film is prevented to be damaged
Or removing, then the silicon dioxide film that a layer thickness is 2um is deposited by PECVD on the surface of TEOS film, then in titanium dioxide
On silicon fiml by CVD method deposit a layer thickness be 8um thickness TEOS film, as outsourcing material layer, and 100 DEG C at a temperature of anneal
50min.
Embodiment three
A kind of production technology of plane waveguiding device, comprising the following steps:
(1) using the silicon wafer of 722um thickness as matrix, silicon wafer upper and lower surfaces with duration a layer thickness be 2.5um
High temperature silica film, to improve the adhesive force of silicon wafer substrate Yu Si oxide attached thereto；Then pass through CVD deposition
Method deposits the TEOS film that a layer thickness is 12um in the silica surface for being located at lower layer, then in the silicon dioxide meter for being located at upper layer
Face deposits the TEOS film that a layer thickness is 12um；To reduce the stress of silicon wafer, light is prevented to be leaked in silicon base；
(2) TEOS film is made annealing treatment into 60min in 1000 DEG C of environment, densification is carried out to TEOS film；
(3) silicon oxynitride film that a layer thickness is 80nm is deposited by PEVCD method on the surface for being located at the TEOS film on upper layer；
Then 1000 DEG C at a temperature of make annealing treatment 60min；
(4) silicon oxynitride that a layer thickness is 1.5um is deposited again by the method for PECVD on the surface of silicon oxynitride film
Film is as waveguide core layer；And the refractive index for controlling the waveguide core layer is 1.490-1.510；
(5) the TEOS film that a layer thickness is 80nm is deposited on the surface of waveguide core layer, silicon oxynitride film is prevented to be damaged
Or removing, then the silicon dioxide film that a layer thickness is 3um is deposited by PECVD on the surface of TEOS film, then in titanium dioxide
On silicon fiml by CVD method deposit a layer thickness be 10um thickness TEOS film, as outsourcing material layer, and 500 DEG C at a temperature of move back
Fiery 60min.
Example IV
A kind of production technology of plane waveguiding device, comprising the following steps:
It (1) with duration a layer thickness is 3um in the upper and lower surfaces of silicon wafer using the silicon wafer of 725um thickness as matrix
High temperature silica film, to improve the adhesive force of silicon wafer substrate Yu Si oxide attached thereto；Then pass through CVD deposition method
The TEOS film that a layer thickness is 15um is deposited in the silica surface for being located at lower layer, then in the silica surface for being located at upper layer
Deposit the TEOS film that a layer thickness is 15um；To reduce the stress of silicon wafer, light is prevented to be leaked in silicon base；
(2) TEOS film is made annealing treatment into 70min in 1100 DEG C of environment, densification is carried out to TEOS film；
(3) silicon oxynitride that a layer thickness is 100nm is deposited by PEVCD method on the surface for being located at the TEOS film on upper layer
Film；Then 1100 DEG C at a temperature of make annealing treatment 70min；
(4) silicon oxynitride film that a layer thickness is 2um is deposited again by the method for PECVD on the surface of silicon oxynitride film
As waveguide core layer；And the refractive index for controlling the waveguide core layer is 1.490-1.510；
(5) the TEOS film that a layer thickness is 85nm is deposited on the surface of waveguide core layer, silicon oxynitride film is prevented to be damaged
Or removing, then the silicon dioxide film that a layer thickness is 4um is deposited by PECVD on the surface of TEOS film, then in titanium dioxide
On silicon fiml by CVD method deposit a layer thickness be 12um thickness TEOS film, as outsourcing material layer, and 700 DEG C at a temperature of move back
Fiery 70min.
The present invention is not limited to above-mentioned preferred forms, anyone can show that other are various under the inspiration of the present invention
The product of form, however, make any variation in its details, it is all that there is technical solution identical or similar to the present application,
It is within the scope of the present invention.
Claims (10)
1. a kind of production technology of plane waveguiding device, which comprises the following steps:
(1) using silicon wafer as matrix, silicon wafer upper and lower surfaces with one layer of high temperature silica film of duration；Then pass through
CVD deposition method deposits one layer of TEOS film in the silica surface for being located at lower layer, then heavy in the silica surface for being located at upper layer
One layer of TEOS film of product；
(2) TEOS film is made annealing treatment；
(3) one layer of silicon oxynitride film is deposited on the surface for being located at the TEOS film on upper layer；Then silicon wafer is annealed；
(4) one layer of silicon oxynitride film is deposited again as waveguide core layer on the surface of silicon oxynitride film；
(5) one layer of TEOS film is deposited on the surface of waveguide core layer, then deposits layer of silicon dioxide film on the surface of TEOS film, then
One layer of TEOS film, re-annealing are deposited on silicon dioxide film.
2. a kind of production technology of plane waveguiding device according to claim 1, which is characterized in that in step (1), the silicon
Piece with a thickness of 720-725um；The silicon dioxide film with a thickness of 2-3um；The TEOS film with a thickness of 10-15um.
3. a kind of technique of plane waveguiding device according to claim 1, which is characterized in that described to be annealed into step (2)
By the silicon wafer for being deposited with TEOS film in 800-1100 DEG C of environment, anneal 50-70min.
4. a kind of technique of plane waveguiding device according to claim 1, which is characterized in that in step (3), pass through PECVD
Method the surface of TEOS film deposit a layer thickness be 50-100nm silicon oxynitride film.
5. a kind of technique of plane waveguiding device according to claim 1, which is characterized in that described to be annealed into step (3)
800-1100 DEG C at a temperature of make annealing treatment 50-70min.
6. a kind of production technology of plane waveguiding device according to claim 1, which is characterized in that in step (4), pass through
The method of PECVD deposits the silicon oxynitride film that a layer thickness is 1-2um in silicon oxynitride film surface.
7. a kind of production technology of plane waveguiding device according to claim 1, which is characterized in that in step (5), in waveguide
The one layer of TEOS film deposited on sandwich layer with a thickness of 75-85nm.
8. a kind of production technology of plane waveguiding device according to claim 1, which is characterized in that in step (5), pass through
PECVD deposits the silicon dioxide film that a layer thickness is 2-4um on TEOS film.
9. a kind of production technology of plane waveguiding device according to claim 1, which is characterized in that in step (5): passing through
The method of CVD deposits the TEOS film that a layer thickness is 8-12um thickness on silicon dioxide film.
10. a kind of production technology of plane waveguiding device according to claim 1, which is characterized in that described in step (5)
It is annealed into the 50-70min that anneals under conditions of temperature is 100-700 DEG C.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113755038A (en) * | 2021-09-22 | 2021-12-07 | 山东银箭金属颜料有限公司 | Water-based aluminum pigment with enhanced anti-corrosion performance |
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Application publication date: 20190212 |