CN109321968A - The laying method of one type single crystal seed - Google Patents
The laying method of one type single crystal seed Download PDFInfo
- Publication number
- CN109321968A CN109321968A CN201811376708.1A CN201811376708A CN109321968A CN 109321968 A CN109321968 A CN 109321968A CN 201811376708 A CN201811376708 A CN 201811376708A CN 109321968 A CN109321968 A CN 109321968A
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- China
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- single crystal
- crystal seed
- layer
- layer single
- splicing seams
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This application discloses the laying methods of a type single crystal seed, and being included in the close laying depth of crucible bottom and seed crystal fusing terminates the identical first layer single crystal seed of leapfrog height；Dislocation type is closely laid with second layer single crystal seed on the first layer single crystal seed, wherein, the splicing seams of the second layer single crystal seed and the splicing seams of the first layer single crystal seed mutually stagger, even if therefore because transport or high temperature cause to generate splicing seams between second layer single crystal seed, the liquid of high temperature melting will not enter the splicing seams between first layer single crystal seed after penetrating the splicing seams between second layer single crystal seed, that is, this laying method can be avoided silicon melt along splicing seams to flow down and cooled and solidified generate polycrystalline, to improve the ratio of efficient monocrystalline silicon piece, and reduce production cost.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology fields, more particularly to the laying method of a type single crystal seed.
Background technique
Current photovoltaic market is higher to the silicon wafer demand of high efficiency, low cost, and polycrystalline cast ingot has the advantage of low cost, but imitates
Rate promotion encounters technical bottleneck, and monocrystalline has efficient advantage, but draws higher cost, in view of the foregoing, the casting of class monocrystalline
Ingot technology becomes the developing direction of an emphasis.
However, having following problem during existing class monocrystalline ingot casting: as shown in FIG. 1, FIG. 1 is the castings of existing class monocrystalline
The schematic diagram of single crystal seed silico briquette shop fixtures during ingot, it is seen then that when carrying out the shop fixtures of single crystal seed silico briquette 102 in crucible 101,
It is the state being in close contact between silico briquette and silico briquette, but will appear vibration during transportation, and also can in the high temperature process
Thermal expansion, these factors can all make occur splicing seams 103, during high temperature melting, silicon melt between single crystal seed silico briquette 102
Can be along this splicing seams 103 to flowing down, since the temperature of lower part is lower than top, the silicon melt for flowing to lower part can be cooled down
Solidification and heterogeneous seeding, cause the region to generate polycrystalline, and resulting defect can reduce the accounting of efficient monocrystalline silicon piece.For
Problem above, current main settling mode are to increase seed crystal blocks area to reduce seed crystal splicing regions, or on seed layer
Side is laid with one layer of particulate material barrier layer, but since its compactness is relatively poor, finally still generates polycrystalline because of splicing seams, and
Single crystal seed draws higher cost, and the process that single crystal seed is fabricated to the dedicated seed crystal blocks of class monocrystalline is more, can not be effective after ingot casting
Recycling.
Summary of the invention
To solve the above problems, can be avoided silicon melt edge the present invention provides the laying method of a type single crystal seed
Splicing seams to flow down and cooled and solidified generate polycrystalline, to improve the ratio of efficient monocrystalline silicon piece.
The laying method of type single crystal seed provided by the invention, comprising:
Terminate the identical first layer single crystal seed of leapfrog height in the close laying depth of crucible bottom and seed crystal fusing；
Dislocation type is closely laid with second layer single crystal seed on the first layer single crystal seed, wherein the second layer
The splicing seams of single crystal seed and the splicing seams of the first layer single crystal seed mutually stagger.
Preferably, in the laying method of above-mentioned class single crystal seed, the first layer single crystal seed with a thickness of 15 millimeters
To 25 millimeters.
Preferably, in the laying method of above-mentioned class single crystal seed, the second layer single crystal seed with a thickness of 10 millimeters
To 15 millimeters.
Preferably, in the laying method of above-mentioned class single crystal seed, the splicing seams of the second layer single crystal seed with it is described
The distance that the splicing seams of first layer single crystal seed are staggered is 5 millimeters to 15 millimeters.
Preferably, in the laying method of above-mentioned class single crystal seed, the first layer single crystal seed and the second layer list
The distance between grain of crystallization crystalline substance and crucible medial surface are 20 millimeters to 40 millimeters.
Preferably, in the laying method of above-mentioned class single crystal seed, the first layer single crystal seed and the second layer list
The side size range of grain of crystallization crystalline substance is 158 millimeters to 180 millimeters.
Preferably, in the laying method of above-mentioned class single crystal seed, the first layer single crystal seed and the second layer list
Grain of crystallization crystalline substance is silicon single crystal seed crystal.
As can be seen from the above description, the laying method of above-mentioned class single crystal seed provided by the invention, due to described first
Layer single crystal seed above dislocation type be closely laid with second layer single crystal seed, wherein the splicing seams of the second layer single crystal seed with
The splicing seams of the first layer single crystal seed mutually stagger, therefore even if because transport or high temperature cause between second layer single crystal seed
Splicing seams are generated, the liquid of high temperature melting will not enter first layer list after penetrating the splicing seams between second layer single crystal seed
Grain of crystallization crystalline substance between splicing seams, that is to say, that this laying method can be avoided silicon melt along splicing seams to flow down and cool down
Solidification generates polycrystalline, to improve the ratio of efficient monocrystalline silicon piece, and reduces production cost.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of single crystal seed silico briquette shop fixtures during existing class monocrystalline ingot casting；
Fig. 2 is the schematic diagram of the laying method of type single crystal seed provided by the present application；
Fig. 3 is that class single crystal seed provided by the present application is laid with status diagram.
Specific embodiment
Core of the invention is to provide the laying method of a type single crystal seed, can be avoided silicon melt along splicing seams to
It flows down and cooled and solidified generation polycrystalline, to improve the ratio of efficient monocrystalline silicon piece, and reduces production cost.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the laying method of type single crystal seed provided by the present application is as shown in Fig. 2, Fig. 2 provides for the application
A type single crystal seed laying method schematic diagram, and combine Fig. 3, Fig. 3 be class single crystal seed provided by the present application be laid with
Status diagram, this method comprises the following steps:
S1: terminate the identical first layer monocrystalline seed of leapfrog height in the close laying depth in 201 bottom of crucible and seed crystal fusing
Crystalline substance 202；
It should be noted that class single crystal seed growth technique can play the role of seeding using single crystal seed, because
It is first laid with first layer single crystal seed 202 in this step, forms splicing seams 203, and class single crystal seed growth technique therebetween
It is a kind of half process of smelting, needs to retain one layer of bottom seed crystal and be not melted to carry out seeding, in actual long brilliant control process
In, by melting stage leapfrog to crystal growing stage, solid liquid interface the stable a certain height in seed crystal and starts upward afterwards for a period of time
Crystallization, to complete seed crystal induction, leapfrog height mentioned herein is the height for being used as first layer single crystal seed 202 in the step
Degree, such first layer single crystal seed would not be melted during entire long brilliant, thus can be by it after long crystalline substance terminates
It takes out and is recycled, as first layer single crystal seed used in next furnace class crystal growth, so as to reduce production
Cost.
S2: dislocation type is closely laid with second layer single crystal seed 204 on first layer single crystal seed 202, wherein the second layer
The splicing seams 205 of single crystal seed 204 are mutually staggered with the splicing seams 203 of first layer single crystal seed 202.
Second layer single crystal seed 204 and 202 staggered of first layer single crystal seed are placed in the step, that is to say, that phase
There is no between adjacent first layer single crystal seed 202 below for splicing seams 205 between adjacent second layer single crystal seed 204
Splicing seams 203 also can only touch accordingly even when melt is flowed down from the splicing seams 205 between second layer single crystal seed 204
The upper surface of one layer of single crystal seed 202, without continue on the splicing seams 203 between first layer single crystal seed 202 to flow down,
It is condensed so as to avoid this part melt and generates polycrystalline and have an adverse effect to finally obtained crystal quality.It additionally needs
Bright, this embodiment is illustrated just with the placement of two layers single crystal seed staggered, actually can also continue to the
More layers single crystal seed is arranged in the upper surface of two layers of single crystal seed, and still the splicing seams of the single crystal seed of adjacent two layers are staggered and set
It sets, melt can more perfectly be avoided to flow into the splicing seams between first layer single crystal seed.
As can be seen from the above description, the laying method of above-mentioned class single crystal seed provided by the present application, due in first layer list
The brilliant dislocation type above of grain of crystallization is closely laid with second layer single crystal seed, wherein the splicing seams and first layer list of second layer single crystal seed
The splicing seams of grain of crystallization crystalline substance mutually stagger, therefore even if because transport or high temperature cause to generate splicing seams between second layer single crystal seed,
The liquid of high temperature melting will not enter between first layer single crystal seed after penetrating the splicing seams between second layer single crystal seed
Splicing seams, that is to say, that this laying method can be avoided silicon melt along splicing seams to flow down and cooled and solidified generate it is more
Crystalline substance, to improve the ratio of efficient monocrystalline silicon piece.
In a preferred embodiment, first layer single crystal seed with a thickness of 15 millimeters to 25 millimeters, need to illustrate
Be, in the prior art in conventional scheme, only with one layer of single crystal seed, thickness general control at 25 millimeters to 50 millimeters,
And actual (tube) length it is brilliant during can all control its seed crystal and retain 15 millimeters away from crucible bottom surface to 25 millimeters of height, that is, from crucible bottom
Single crystal seed more than face within the scope of 15 millimeters to 25 millimeters can be retained after long brilliant, such technics comparing at
It is ripe, and the present embodiment is the technique based on this maturation, since being provided with two layers of single crystal seed, then lower part can will be located at
First layer single crystal seed height be set as 15 millimeters to 25 millimeters, will not all be melted during every vice-minister is brilliant in this way, thus
After ingot casting, silico briquette product examine truncation, silico briquette goes portion to carry out secondary truncation, control is individually truncated in the single crystal seed of lower part
Cleaning, cleaning, which finishes, carries out next round throwing furnace use, reduces production cost.
Further, the thickness of second layer single crystal seed can be preferably 10 millimeters to 15 millimeters, and this thickness can expire
The demand of sufficient seeding technique, and cost is relatively low, can't carry out more benefits but to seeding process bands if thickness is bigger
Cost is increased without foundation.
In a specific embodiment, the splicing seams of second layer single crystal seed and the splicing seams of first layer single crystal seed are wrong
The distance opened is 5 millimeters to 15 millimeters, it should be noted that this distance being staggered is enough to avoid melt while passing through two layers of list
The splicing seams of grain of crystallization crystalline substance, specifically, be exactly during high temperature melting melt along the splicing seams between second layer single crystal seed
It flows down, is blocked later by first layer single crystal seed, since thickness and the seed crystal fusing of first layer single crystal seed terminate leapfrog height
Degree is consistent, therefore the melt between splicing seams can be completely melted, and can not play seeding effect, thus will not be as in the prior art
It generates polycrystalline like that and has an adverse effect to end product quality.
In another embodiment, first layer single crystal seed and the distance between second layer single crystal seed and crucible medial surface
For that can be preferably 20 millimeters to 40 millimeters, what needs to be explained here is that, during ingot casting, earthenware is squeezed since melt thermally expands
Crucible may have the risk of overflow, so the single crystal seed being laid with cannot directly be contacted with crucible side, and need to retain centainly
Gap, single crystal seed itself have certain size, will generate gap after laying between crucible wall, in addition, for different
Also there is certain difference in crucible, the gap.
Specifically, the side size range of first layer single crystal seed and second layer single crystal seed is 158 millimeters to 180 millimeters, and
And first layer single crystal seed and second layer single crystal seed all can be silicon single crystal seed crystals.
In conclusion above-described embodiment shop fixtures by way of the double-deck staggered superposition, avoids in conventional scheme fusion process,
The problem of silicon melt goes out to permeate from splicing seams, and last heterogeneous seeding forms polycrystalline；On the other hand, the laying of the double-deck seed crystal, lower layer
Seed crystal is hit corrosion by silicon melt and is reduced, and seed crystal performance retains relatively preferable, may be reused, and reduces production cost.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (7)
1. the laying method of a type single crystal seed characterized by comprising
Terminate the identical first layer single crystal seed of leapfrog height in the close laying depth of crucible bottom and seed crystal fusing；
Dislocation type is closely laid with second layer single crystal seed on the first layer single crystal seed, wherein the second layer monocrystalline
The splicing seams of seed crystal and the splicing seams of the first layer single crystal seed mutually stagger.
2. the laying method of class single crystal seed according to claim 1, which is characterized in that the first layer single crystal seed
With a thickness of 15 millimeters to 25 millimeters.
3. the laying method of class single crystal seed according to claim 1, which is characterized in that the second layer single crystal seed
With a thickness of 10 millimeters to 15 millimeters.
4. the laying method of class single crystal seed according to claim 1, which is characterized in that the second layer single crystal seed
Splicing seams and the splicing seams of the first layer single crystal seed are 5 millimeters to 15 millimeters at a distance from being staggered.
5. the laying method of class single crystal seed according to claim 1-4, which is characterized in that the first layer list
Grain of crystallization crystalline substance and the distance between the second layer single crystal seed and crucible medial surface are 20 millimeters to 40 millimeters.
6. the laying method of class single crystal seed according to claim 5, which is characterized in that the first layer single crystal seed and
The side size range of the second layer single crystal seed is 158 millimeters to 180 millimeters.
7. the laying method of class single crystal seed according to claim 1-4, which is characterized in that the first layer list
Grain of crystallization crystalline substance and the second layer single crystal seed are silicon single crystal seed crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811376708.1A CN109321968A (en) | 2018-11-19 | 2018-11-19 | The laying method of one type single crystal seed |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811376708.1A CN109321968A (en) | 2018-11-19 | 2018-11-19 | The laying method of one type single crystal seed |
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| CN109321968A true CN109321968A (en) | 2019-02-12 |
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| CN201811376708.1A Pending CN109321968A (en) | 2018-11-19 | 2018-11-19 | The laying method of one type single crystal seed |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111647941A (en) * | 2020-06-01 | 2020-09-11 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
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| CN105603521A (en) * | 2016-02-03 | 2016-05-25 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method, preparation method of monocrystalline silicon-like ingot and monocrystalline silicon-like piece |
| CN105603507A (en) * | 2016-02-03 | 2016-05-25 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method, preparation method of monocrystalline silicon-like ingot and monocrystalline silicon-like piece |
| CN107523858A (en) * | 2017-07-26 | 2017-12-29 | 晶科能源有限公司 | A kind of seed crystal laying method, the casting method of class monocrystal silicon and class monocrystalline silicon piece |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105568365A (en) * | 2016-02-03 | 2016-05-11 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method and crystalline silicon and preparation method thereof |
| CN105603521A (en) * | 2016-02-03 | 2016-05-25 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method, preparation method of monocrystalline silicon-like ingot and monocrystalline silicon-like piece |
| CN105603507A (en) * | 2016-02-03 | 2016-05-25 | 江西赛维Ldk太阳能高科技有限公司 | Seed crystal laying method, preparation method of monocrystalline silicon-like ingot and monocrystalline silicon-like piece |
| CN107523858A (en) * | 2017-07-26 | 2017-12-29 | 晶科能源有限公司 | A kind of seed crystal laying method, the casting method of class monocrystal silicon and class monocrystalline silicon piece |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111647941A (en) * | 2020-06-01 | 2020-09-11 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
| CN111647941B (en) * | 2020-06-01 | 2022-08-12 | 苏州阿特斯阳光电力科技有限公司 | Seed crystal laying method, preparation method of mono-like silicon ingot and mono-like silicon ingot prepared by same |
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Application publication date: 20190212 |