CN109312212B - Grinding fluid - Google Patents
Grinding fluid Download PDFInfo
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- CN109312212B CN109312212B CN201780033332.1A CN201780033332A CN109312212B CN 109312212 B CN109312212 B CN 109312212B CN 201780033332 A CN201780033332 A CN 201780033332A CN 109312212 B CN109312212 B CN 109312212B
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- polishing
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- 238000000227 grinding Methods 0.000 title claims abstract description 160
- 239000012530 fluid Substances 0.000 title claims abstract description 80
- 239000002904 solvent Substances 0.000 claims abstract description 154
- 238000005498 polishing Methods 0.000 claims abstract description 118
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 104
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000005456 alcohol based solvent Substances 0.000 claims abstract description 30
- 239000004210 ether based solvent Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 38
- 239000006061 abrasive grain Substances 0.000 abstract description 73
- 238000000926 separation method Methods 0.000 abstract description 53
- 238000011084 recovery Methods 0.000 abstract description 35
- 230000007423 decrease Effects 0.000 abstract description 19
- 239000007788 liquid Substances 0.000 description 55
- 239000002245 particle Substances 0.000 description 51
- 238000000034 method Methods 0.000 description 22
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 21
- 238000009835 boiling Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 238000004062 sedimentation Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- -1 ethylene glycol methyl propylene ether Chemical class 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000005119 centrifugation Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- ALSTYHKOOCGGFT-KTKRTIGZSA-N (9Z)-octadecen-1-ol Chemical compound CCCCCCCC\C=C/CCCCCCCCO ALSTYHKOOCGGFT-KTKRTIGZSA-N 0.000 description 1
- OHJYHAOODFPJOD-UHFFFAOYSA-N 2-(2-ethylhexoxy)ethanol Chemical compound CCCCC(CC)COCCO OHJYHAOODFPJOD-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- HHAPGMVKBLELOE-UHFFFAOYSA-N 2-(2-methylpropoxy)ethanol Chemical compound CC(C)COCCO HHAPGMVKBLELOE-UHFFFAOYSA-N 0.000 description 1
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 description 1
- OADIZUFHUPTFAG-UHFFFAOYSA-N 2-[2-(2-ethylhexoxy)ethoxy]ethanol Chemical compound CCCCC(CC)COCCOCCO OADIZUFHUPTFAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- GCYHRYNSUGLLMA-UHFFFAOYSA-N 2-prop-2-enoxyethanol Chemical compound OCCOCC=C GCYHRYNSUGLLMA-UHFFFAOYSA-N 0.000 description 1
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical group 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229940055577 oleyl alcohol Drugs 0.000 description 1
- XMLQWXUVTXCDDL-UHFFFAOYSA-N oleyl alcohol Natural products CCCCCCC=CCCCCCCCCCCO XMLQWXUVTXCDDL-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The purpose of the present invention is to provide a grinding fluid that has a relatively high recovery efficiency of centrifugal separation while suppressing a decrease in dispersibility when abrasive grains are contained. In the polishing solution of the present invention, the total content of the alcohol-based solvent and the ether-based solvent in all the solvents of the polishing solution is 95% by mass or more and 100% by mass or less, and the mass ratio of the ether-based solvent to the alcohol-based solvent is 1 time or more and 5 times or less. The viscosity of the ether solvent at 25 ℃ is lower than that of the alcohol solvent, and the difference in viscosity between the ether solvent and the alcohol solvent is preferably 15 mPas to 20 mPas.
Description
Technical Field
The present invention relates to a grinding fluid.
Background
In recent years, as substrates for precision electronic devices such as hard disks (hard disks), Light Emitting Diodes (LEDs), power devices (power devices), and the like, there has been an increasing demand for difficult-to-process substrates such as glass, sapphire (sapphire), and silicon carbide.
Polishing pads to which abrasive grains are fixed are generally used for polishing such difficult-to-process substrates. The polishing pad using the fixed abrasive grains can be processed by using a commercially available double-side polishing machine, for example. Specifically, the substrate held by the carrier is sandwiched between upper and lower platens to which polishing pads are fixed, and the substrate and the upper and lower platens are moved relative to each other, whereby both surfaces of the substrate are simultaneously polished. At this time, the polishing solution is supplied to both surfaces of the substrate in order to cool the processing surface of the substrate or to facilitate the processing.
As the polishing liquid, for example, a slurry-like polishing liquid containing abrasive grains such as alumina particles or silica particles is known. In order to make the abrasive grains effectively contribute to polishing during polishing, the abrasive grains need to be dispersed in the polishing liquid. Therefore, in view of the dispersibility of the abrasive particles, an alcohol solvent such as ethylene glycol is generally used as a solvent of the polishing liquid.
The grinding fluid is reused for reducing the manufacturing cost or reducing the environmental load. In the polishing, since the polishing debris is generated from the substrate and mixed into the polishing liquid, the amount of the polishing debris contained in the polishing liquid increases if the polishing liquid is repeatedly reused. As described above, if the amount of the grinding debris contained in the grinding fluid increases, the grinding efficiency of the substrate is likely to decrease or the substrate is likely to be damaged. Therefore, in order to reuse the grinding fluid, it is necessary to separate and collect the grinding chips from the used grinding fluid. Examples of the separation and recovery method include centrifugation, separation by a filter, and washing and separation by a strong acid or a strong base. Among these, a high-performance filter is required for separation by the filter, and therefore the cost of the filter is high. In addition, washing and separation using strong acid or strong base have large disposal costs of waste liquid and environmental load. Therefore, centrifugal separation is generally used for separating the ground chips.
When the grinding fluid of the alcohol solvent is centrifuged, it is difficult to recover small grinding debris having a particle size of 100nm or less, and the recovery efficiency of the grinding fluid tends to be low. As a method for improving the recovery efficiency, for example, there is a method of recovering grinding chips having a small particle size by further performing membrane separation after centrifugal separation (see japanese patent application laid-open No. 2010-221337). However, if a separation step other than centrifugal separation is added to improve the recovery efficiency as described above, the manufacturing facility cost increases or the number of steps for recycling the grinding fluid increases. Therefore, it is required to improve the recovery efficiency of the grinding fluid by centrifugal separation.
Documents of the prior art
Patent document
Patent document 1: japanese patent application laid-open No. 2010-221337
Disclosure of Invention
Problems to be solved by the invention
The present invention has been made in view of these problems, and an object of the present invention is to provide a grinding fluid having a relatively high recovery efficiency of centrifugal separation while suppressing a decrease in dispersibility when abrasive grains are contained.
Means for solving the problems
As a result of diligent research on the recovery efficiency of a grinding fluid by centrifugation, the inventors of the present invention have found that even small grinding chips having a particle size of 100nm or less can be recovered from the grinding fluid by centrifugation by adding a predetermined amount of an ether solvent to an alcohol solvent as a solvent of the grinding fluid, and have completed the present invention.
That is, the invention made to solve the above-mentioned problems is a polishing liquid used for polishing a substrate material, and contains an alcohol-based solvent and an ether-based solvent, wherein the total content of the alcohol-based solvent and the ether-based solvent in all solvents of the polishing liquid is 95 mass% or more and 100 mass% or less, and the mass ratio of the ether-based solvent to the alcohol-based solvent is 1 time or more and 5 times or less.
The polishing solution contains an alcohol-based solvent and an ether-based solvent, the total content of the alcohol-based solvent and the ether-based solvent in all the solvents of the polishing solution is within the above range, and the mass ratio of the ether-based solvent to the alcohol-based solvent is within the above range. By adding a predetermined amount of an ether solvent to the alcohol solvent as described above, the polishing liquid can reduce the solvent density while suppressing a decrease in the viscosity of the entire solvent. By suppressing the decrease in the viscosity of the solvent, the dispersion of the abrasive particles can be ensured even when the grinding fluid contains the abrasive particles. Since the density of the grinding chips is generally higher than that of the solvent, the difference in density between the solvent and the grinding chips can be increased by reducing the density of the solvent as described above. By increasing the density difference between the solvent and the grinding chips as described above, the grinding fluid can be easily separated by centrifugal separation even with relatively light grinding chips having relatively small particle diameters. Therefore, the grinding fluid can suppress the decrease in dispersibility when the abrasive grains are contained, and can relatively increase the recovery efficiency of the centrifugal separation.
The ether solvent has a viscosity lower than that of the alcohol solvent at 25 ℃, and the difference in viscosity between the ether solvent and the alcohol solvent is preferably 15 mPas to 20 mPas. Although the ease of centrifugal separation increases as the viscosity of the solvent decreases, it is difficult to ensure the dispersibility of the abrasive grains when the abrasive grains are contained in the grinding fluid if the viscosity of the solvent decreases. By mixing an ether solvent having a lower viscosity than the alcohol solvent with an alcohol solvent having a relatively high dispersibility of the abrasive grains and setting the difference in viscosity between the ether solvent and the alcohol solvent within the above range, it is possible to further promote the recovery of the grinding chips by centrifugal separation while securing the dispersibility of the abrasive grains, and thus to improve the recovery efficiency of the grinding fluid.
Here, "ether" refers to an organic compound having a structure (-O-) in which two organic groups are connected via an oxygen atom. The term "alcohol" refers to a compound other than a compound belonging to an ether among compounds in which a hydrogen atom of an aliphatic hydrocarbon is substituted with a hydroxyl group (-OH).
ADVANTAGEOUS EFFECTS OF INVENTION
As described above, the grinding fluid of the present invention can improve the recovery efficiency of centrifugal separation while suppressing the decrease in dispersibility when abrasive grains are contained.
Drawings
Fig. 1 is a flowchart illustrating a method of polishing a substrate material according to an embodiment of the present invention.
Fig. 2 is a block diagram showing a configuration of a conventional grinding apparatus.
FIG. 3 is a photograph showing the state of the grinding fluid before and after the centrifugal separation in the example.
[ description of symbols ]
1: storage groove
2: grinding machine
3: recovery tank
4: centrifugal separator
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail.
< grinding fluid >
The polishing liquid according to one embodiment of the present invention is used for polishing a substrate material, for example, a flat surface polishing using a fixed abrasive. The polishing solution contains an alcohol solvent and an ether solvent. The polishing liquid has abrasive grains dispersed in the solvent.
(solvent)
The alcohol solvent is not particularly limited, and examples thereof include: ethylene glycol, propylene glycol, butylene glycol, oleyl alcohol, and the like. Among them, ethylene glycol having a relatively low viscosity and easily ensuring dispersibility of the abrasive grains is preferable. The alcohol solvent may be used alone or in combination of two or more.
The ether solvent is not particularly limited, and examples thereof include: ethylene glycol methyl ether, diethylene glycol methyl ether, triethylene glycol methyl ether, ethylene glycol isopropyl ether, diethylene glycol isopropyl ether, ethylene glycol butyl ether, diethylene glycol butyl ether, triethylene glycol butyl ether, ethylene glycol isobutyl ether, diethylene glycol isobutyl ether, ethylene glycol hexyl ether, diethylene glycol hexyl ether, ethylene glycol-2-ethylhexyl ether, diethylene glycol-2-ethylhexyl ether, ethylene glycol allyl ether, ethylene glycol phenyl ether, diethylene glycol phenyl ether, ethylene glycol methyl propylene ether, diethylene glycol methyl propylene ether, triethylene glycol methyl propylene ether, ethylene glycol propyl propylene ether, diethylene glycol propyl propylene ether, ethylene glycol butyl propylene ether, diethylene glycol butyl propylene ether, ethylene glycol phenyl propylene ether, and the like. Among them, diethylene glycol isobutyl ether, which is easy to improve the recovery efficiency of the grinding fluid, is preferable. The ether solvents may be used alone or in combination of two or more.
The lower limit of the total content of the alcohol-based solvent and the ether-based solvent in all the solvents in the polishing solution is 95% by mass, and more preferably 97% by mass. If the total content is less than the lower limit, it may be difficult to centrifugally separate the grinding chips having a small particle size. On the other hand, the upper limit of the total content is 100 mass%.
The lower limit of the mass ratio of the ether solvent to the alcohol solvent is 1 time, and more preferably 2 times. On the other hand, the upper limit of the mass ratio is 5 times, more preferably 4 times. If the mass ratio is less than the lower limit, it may be difficult to recover the grinding chips having a small particle size by centrifugal separation. Conversely, if the mass ratio exceeds the upper limit, the dispersibility of the abrasive grains may be insufficient.
Here, the reason why the dispersibility of abrasive grains can be secured by containing an alcohol-based solvent and an ether-based solvent in the grinding fluid and that even grinding chips having a small particle size can be recovered by centrifugal separation is considered. The ease of centrifugal separation can be represented by the sedimentation coefficient s [ s ] represented by the following formula (1).
[ number 1]
In the formula (1), d [ cm ]]Denotes the diameter of the particles to be separated, σ g/cm3]Denotes the density of the particles, rho [ g/cm ]3]Denotes the density of the solvent,. eta.g/cm. s]The viscosity of the solvent is indicated.
It is considered that the density σ of the grinding debris is substantially constant regardless of the particle diameter, and therefore, it is found from the above formula (1) that the reason why it is difficult to recover the grinding debris having a small particle diameter in the case of using, for example, a grinding fluid using ethylene glycol as a solvent is because d is small. In addition, if the density of the solvent is increased, the sedimentation coefficient s can be increased. In addition, the sedimentation coefficient s can also be increased by reducing the viscosity of the solvent. As described above, according to the formula (1), it is found that the recovery of the grinding chips having small particle diameters is facilitated by adjusting the density or viscosity of the solvent. However, when the viscosity of the solvent is reduced, the dispersibility of the abrasive grains is reduced, and thus the machining acceleration of the grinding fluid is reduced. Therefore, as a result of diligent studies to achieve both the recovery properties of the grinding chips and the processing-promoting properties of the grinding fluid, the inventors of the present invention have found that a predetermined amount of an ether solvent may be added to an alcohol solvent as a solvent for the grinding fluid. That is, the inventors of the present invention know that: as shown in table 1, since the viscosity of the alcohol-based solvent and the ether-based solvent is relatively high compared to the density (the value of viscosity/density is relatively large), the sedimentation coefficient s can be increased while suppressing the decrease in the viscosity of the solvent by setting the total content of the alcohol-based solvent and the ether-based solvent to 50% by mass or more of all the solvents.
[ Table 1]
Further, the inventors of the present invention examined the mass ratio of the ether solvent to the alcohol solvent, and found that when the mass ratio is less than 1 time, it is difficult to recover the ground debris having a small particle size by centrifugal separation, and when the mass ratio exceeds 5 times, it is difficult to disperse the abrasive grains in the solvent. From the above results, the inventors of the present invention learned that: by setting the mass ratio of the ether solvent to the alcohol solvent to be 1 to 5 times, both the recovery of the grinding chips and the processing acceleration of the grinding fluid can be achieved.
The lower limit of the viscosity of the alcohol-based solvent at 25 ℃ is preferably 15 mPas, and more preferably 20 mPas. On the other hand, the upper limit of the viscosity of the alcohol-based solvent is preferably 30 mPas, and more preferably 25 mPas. If the viscosity of the alcohol solvent is less than the lower limit, dispersibility of the abrasive particles may be insufficient. On the other hand, if the viscosity of the alcohol solvent exceeds the upper limit, the sedimentation coefficient s cannot be sufficiently increased, and it may be difficult to recover grinding chips having a small particle size.
The lower limit of the viscosity of the ether solvent at 25 ℃ is preferably 3 mPas, more preferably 4 mPas. On the other hand, the upper limit of the viscosity of the ether solvent is preferably 10mPa · s, and more preferably 7mPa · s. If the viscosity of the ether solvent is less than the lower limit, the viscosity of the entire solvent tends to be reduced by the ether solvent, and it may be difficult to secure dispersibility of the abrasive grains. On the other hand, if the viscosity of the ether solvent exceeds the upper limit, the sedimentation coefficient s cannot be sufficiently increased by the ether solvent, and it may be difficult to recover grinding chips having a small particle size.
The lower limit of the viscosity of the entire solvent at 25 ℃ is preferably 7 mPas, more preferably 8 mPas. On the other hand, the upper limit of the viscosity of the entire solvent is preferably 15mPa · s, and more preferably 12mPa · s. If the viscosity of the entire solvent is less than the lower limit, dispersibility of the abrasive particles may be insufficient. On the other hand, if the viscosity of the entire solvent exceeds the upper limit, the sedimentation coefficient s cannot be sufficiently increased, and it may be difficult to recover the grinding chips having a small particle size.
The viscosity of the ether solvent at 25 ℃ is lower than that of the alcohol solvent. By adding the ether solvent having a lower viscosity than the alcohol solvent to the alcohol solvent having a relatively high dispersibility of the abrasive grains as described above, the recovery of the grinding chips by centrifugal separation can be further promoted while the dispersibility of the abrasive grains is ensured, and the recovery efficiency of the grinding fluid can be improved.
The lower limit of the difference in viscosity between the ether-based solvent and the alcohol-based solvent at 25 ℃ is preferably 15 mPas, and more preferably 17 mPas. On the other hand, the upper limit of the viscosity difference is preferably 20mPa · s, more preferably 19mPa · s. If the viscosity difference is less than the lower limit, the sedimentation coefficient s cannot be sufficiently increased by the ether solvent, and it may be difficult to recover grinding chips having a small particle size. On the other hand, if the viscosity difference exceeds the upper limit, the viscosity of the entire solvent tends to be decreased by the ether solvent, and thus it may be difficult to increase the sedimentation coefficient s while ensuring the dispersibility of the abrasive grains. In the case where a mixture of a plurality of solvents is used as the ether-based solvent or the alcohol-based solvent, the "difference in viscosity between the ether-based solvent and the alcohol-based solvent" refers to the difference between the viscosity of the ether-based solvent and the viscosity of the alcohol-based solvent, which are averaged based on the mass ratio.
The upper limit of the density of the alcohol solvent at 20 ℃ is preferably 1.3g/cm3More preferably 1.2g/cm3. If the density of the alcohol solvent exceeds the upper limit, the sedimentation coefficient s may not be sufficiently increased even if an ether solvent is added, and it may be difficult to recover grinding chips having a small particle size. On the other hand, the lower limit of the density of the alcohol solvent is not particularly limited, but is usually 0.7g/cm3Left and right.
The upper limit of the density of the ether solvent at 20 ℃ is preferably 1.1g/cm3More preferably 1g/cm3More preferably 0.95g/cm3. If the density of the ether solvent exceeds the upper limit, the sedimentation coefficient s cannot be sufficiently increased by the ether solvent, and it may be difficult to recover grinding chips having a small particle size. On the other hand, the lower limit of the density of the ether solvent is not particularly limited, but is usually 0.7g/cm3Left and right.
The upper limit of the density of the entire solvent at 20 ℃ is preferably 1.2g/cm3More preferably 1.1g/cm3. If the density of the entire solvent exceeds the upper limit, the sedimentation coefficient s cannot be sufficiently increased, and it may be difficult to recover grinding chips having small particle diameters. On the other hand, the lower limit of the density of the entire solvent is not particularly limited, but is usually 0.7g/cm3Left and right.
The lower limit of the boiling point of the alcohol solvent is preferably 150 ℃ and more preferably 180 ℃. On the other hand, the upper limit of the boiling point of the alcohol solvent is preferably 300 ℃ and more preferably 250 ℃. If the boiling point of the alcohol solvent is less than the lower limit, the solvent may evaporate due to frictional heat generated by polishing, and the composition of the polishing liquid may change. Conversely, if the boiling point of the alcohol solvent exceeds the upper limit, the viscosity of the solvent may become too high, and it may become difficult to recover grinding debris having a small particle size.
The lower limit of the boiling point of the ether solvent is preferably 150 ℃ and more preferably 180 ℃. On the other hand, the upper limit of the boiling point of the ether solvent is preferably 300 ℃ and more preferably 250 ℃. If the boiling point of the ether solvent is less than the lower limit, the solvent may evaporate due to frictional heat generated by polishing, and the composition of the polishing solution may change. Conversely, if the boiling point of the ether solvent exceeds the upper limit, the viscosity of the solvent may become too high, and it may become difficult to recover grinding debris having a small particle size.
The upper limit of the absolute value of the difference between the boiling point of the alcohol-based solvent and the boiling point of the ether-based solvent is preferably 60 ℃ and more preferably 30 ℃. If the absolute value of the difference in boiling points exceeds the upper limit, the difference in the amount of solvent evaporated by the frictional heat generated by polishing becomes significant between the alcohol-based solvent and the ether-based solvent. Therefore, the mass ratio of the ether solvent to the alcohol solvent changes during polishing, and the dispersibility of the abrasive grains and the recovery efficiency of the grinding fluid may decrease. On the other hand, the lower limit of the absolute value of the difference in boiling points is not particularly limited, and may be 0 ℃.
(abrasive grain)
The abrasive grains contained in the polishing liquid are not particularly limited, and various abrasive grains such as alumina abrasive grains, silica abrasive grains, cerium oxide abrasive grains, and silicon carbide abrasive grains can be used.
The lower limit of the average particle diameter of the abrasive grains is preferably 1 μm, and more preferably 3 μm. On the other hand, the upper limit of the average particle diameter is preferably 20 μm, and more preferably 15 μm. If the average particle size of the abrasive grains is less than the lower limit, the processing promoting effect of the abrasive grains may not be sufficiently obtained. Conversely, if the average particle size of the abrasive grains exceeds the upper limit, the substrate material may be damaged during processing. The "average particle diameter" refers to a 50% value (50% particle diameter, D50) of a volume-based cumulative particle size distribution curve measured by a laser diffraction method or the like.
The lower limit of the content of the abrasive grains in the polishing liquid is preferably 2.5% by mass, and more preferably 5% by mass. On the other hand, the upper limit of the content of the abrasive grains is preferably 50% by mass, and more preferably 30% by mass. If the content of the abrasive grains is less than the lower limit, the processing promoting effect of the abrasive grains may not be sufficiently obtained. On the other hand, if the content of the abrasive grains exceeds the upper limit, the life of the polishing pad may be reduced, the substrate material may be damaged during processing, or the dispersion of the abrasive grains may be difficult.
(other Components)
The grinding fluid may also contain various additives as required. Examples of the additive include a dispersant for improving the dispersibility of the abrasive grains, a polishing rate improver for improving the polishing rate, a flattening agent for reducing irregularities of the surface to be polished, a pH adjuster for adjusting the pH to a desired value, and a pH buffer for suppressing a change in the pH. These may be used alone, or two or more additives may be used in combination. The content of the additive in the polishing liquid is not particularly limited, and may be, for example, 0.0001 to 5 mass%.
The polishing solution may optionally contain another solvent such as water, but it is preferable that the total content of the alcohol-based solvent and the ether-based solvent in all the solvents is 100% by mass, that is, the polishing solution does not contain another solvent. If the polishing liquid contains another solvent, the dispersibility of the slurry abrasive grains may decrease to lower the polishing performance, or the recovery efficiency of the polishing liquid by centrifugal separation may decrease.
< method for grinding substrate Material >
As shown in fig. 1, the method for polishing a substrate material using the polishing liquid mainly comprises: a substrate material disposing step S1, a substrate material grinding step S2, a grinding fluid storage step S3, a grinding chip removal step S4, and a grinding fluid resupply step S5.
(grinding device)
The grinding method can be performed by a known grinding apparatus, for example, a grinding apparatus mainly including a retention tank 1, a grinder 2, a recovery tank 3, and a centrifugal separator 4 as shown in fig. 2. The storage tank 1 stores a polishing liquid and is configured to supply the polishing liquid to a substrate material disposed on the polishing machine 2. The grinder 2 is a grinder that grinds a substrate material, and a known grinder such as a single-side grinder or a double-side grinder can be used. The recovery tank 3 is configured to recover the polishing liquid used for polishing the substrate material by the polishing machine 2. The centrifugal separator 4 is configured to centrifugally separate the grinding fluid collected in the collection tank 3. The centrifugal separator 4 is also configured to be able to send the centrifugally separated grinding fluid to the storage tank 1.
(substrate Material preparation step)
In the substrate material arranging step S1, the substrate material to be polished is arranged on the polishing machine 2. For example, in the case of a double-side grinder, a polishing pad is fixed to upper and lower platens of the grinder 2, and a substrate material held by a carrier is sandwiched between the upper and lower platens.
The substrate material is not particularly limited, and examples thereof include: and compound semiconductors such as glass, sapphire, GaN, and SiC. The shape of the substrate material is not particularly limited as long as it can be fixed to the grinder 2, and may be, for example, a plate shape.
(step of grinding substrate Material)
In the substrate material grinding step S2, the substrate material is ground by the rotation of the polishing pad while supplying the grinding fluid. Specifically, the polishing liquid stored in the storage tank 1 is supplied to the substrate material polished by the polishing machine 2, and the platen to which the polishing pad is fixed is rotated to move the substrate material and the polishing pad relative to each other, thereby polishing the substrate material.
The polishing liquid is introduced between the polishing pad and the substrate material to cool the processing surface of the substrate material or to promote the processing by the contained abrasive grains. The supply amount of the polishing liquid may be suitably determined depending on the type or size of the substrate material, and may be, for example, 10ml/min to 50 ml/min.
(grinding fluid storage step)
In the grinding fluid storage step S3, the grinding fluid used in the substrate material grinding step S2 is stored in the recovery tank 3. The polishing liquid contains polishing debris by polishing the substrate material. The grinding fluid stored in the recovery tank 3 is usually stirred so that the abrasive grains and the like contained in the grinding fluid do not precipitate or aggregate.
(grinding scrap removal step)
In the grinding chip removal step S4, grinding chips are removed from the stored grinding fluid by centrifugal separation. Specifically, the grinding fluid stored in the recovery tank 3 is periodically or continuously sent to the centrifugal separator 4, and grinding debris is recovered and removed from the grinding fluid.
The centrifugal separator 4 is not particularly limited, and may be selected according to the amount of the polishing liquid to be processed, and the like. Among them, a decanter type centrifuge is preferable, which can perform a separation treatment stably for a long time.
The lower limit of the centrifugal force in the grinding chip removal step S4 is preferably 1500G, and more preferably 2000G. If the centrifugal force is less than the lower limit, the grinding chips, particularly small in particle size, may not be sufficiently separated. On the other hand, the upper limit of the centrifugal force is not particularly limited, and may be 5000G, for example. When the centrifugal force exceeds the upper limit, the price of the centrifugal separator 4 increases, and the manufacturing facility cost may increase.
The time for the centrifugal separation in the grinding debris removal step S4 depends on the capacity or the throughput of the centrifugal separator 4, but the lower limit of the time for the centrifugal separation is preferably 3 minutes, and more preferably 5 minutes. On the other hand, the upper limit of the time for the centrifugal separation is preferably 30 minutes, and more preferably 20 minutes. If the time for the centrifugal separation is less than the lower limit, the grinding chips, particularly small in particle size, may not be sufficiently separated. Conversely, if the time for the centrifugal separation exceeds the upper limit, the treatment efficiency for reusing the grinding fluid may be reduced.
In the grinding method, the grinding fluid is used as the grinding fluid, so even grinding debris with small particle size can be recovered by centrifugal separation. Therefore, in the grinding method, it is not necessary to collect grinding chips having small particle sizes by a method other than centrifugal separation such as membrane separation. Therefore, in the grinding method, the grinding fluid from which the grinding chips have been removed by centrifugal separation can be directly reused.
Since the abrasive grains are also removed together with the grinding chips in the grinding chip removal step S4, the abrasive grains may be added to the grinding fluid as needed. The abrasive grains may be used as new abrasive grains, or the abrasive grains and the grinding chips recovered in the grinding chip removal step S4 may be further centrifugally separated to recover and reuse the abrasive grains.
(grinding fluid resupply step)
In the grinding fluid resupply step S5, the grinding fluid after the grinding chip removal step S4 is resupplied to the substrate material. Specifically, the grinding fluid after the grinding chip removal step S4 is supplied to the storage tank 1. The polishing liquid supplied to the storage tank 1 is mixed with the polishing liquid stored in the storage tank 1 to adjust the content of the abrasive grains, and the like, and then resupplied to the substrate material in the substrate material polishing step S2.
< method for producing substrate >
The substrate may be manufactured by grinding of a substrate material using the grinding method. Specifically, the substrate can be produced from the substrate material by the above-mentioned polishing method by flat polishing using a polishing pad and a polishing liquid and by a fixed abrasive grain method. The substrate manufactured by the method for manufacturing a substrate is not particularly limited, and examples thereof include: glass substrates, sapphire substrates, compound semiconductor substrates such as GaN and SiC.
< advantages >
The polishing solution contains an alcohol-based solvent and an ether-based solvent, wherein the total content of the alcohol-based solvent and the ether-based solvent in all the solvents of the polishing solution is 95 mass% or more and 100 mass% or less, and the mass ratio of the ether-based solvent to the alcohol-based solvent is 1 time or more and 5 times or less. By adding a predetermined amount of an ether solvent to the alcohol solvent as described above, the polishing liquid can reduce the solvent density while suppressing a decrease in the viscosity of the entire solvent. By suppressing the decrease in the viscosity of the solvent, the dispersion of the abrasive particles can be ensured even when the grinding fluid contains the abrasive particles. Since the density of the grinding chips is generally higher than that of the solvent, the difference in density between the solvent and the grinding chips can be increased by reducing the density of the solvent as described above. By increasing the density difference between the solvent and the grinding chips as described above, the grinding fluid can be easily separated by centrifugal separation even with relatively light grinding chips having relatively small particle diameters. Therefore, the grinding fluid can suppress the decrease in dispersibility when the abrasive grains are contained, and can relatively increase the recovery efficiency of the centrifugal separation.
In the grinding method, even grinding chips having a small particle size can be separated by centrifugal separation by using the grinding fluid. Therefore, by using the above-described grinding method, the recovery efficiency of the grinding fluid can be made relatively high while suppressing an increase in the cost of manufacturing equipment or man-hours for recycling the solvent. Therefore, in the method for manufacturing the substrate using the grinding method, the manufacturing cost of the substrate is relatively low.
[ other embodiments ]
The present invention is not limited to the above embodiments, and various modifications and improvements other than the above embodiments may be made.
In the above embodiment, the case of the polishing liquid containing the abrasive grains is described, but the present invention includes the polishing liquid containing no abrasive grains. In the grinding fluid containing no abrasive grains, grinding chips having a small particle size can be recovered by centrifugal separation, and therefore the recovery efficiency of the grinding fluid is relatively high.
In the above-described embodiment, the method of resupplying the polishing liquid to the substrate material via the storage tank has been described as the polishing method, but the polishing liquid does not necessarily have to be resupplied to the substrate material via the storage tank, and may be resupplied directly to the substrate material, for example.
Examples
The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to the following examples.
[ example 1]
Ethylene Glycol (EG) as an alcohol-based solvent and diethylene glycol isobutyl ether (isoBDG) as an ether-based solvent were prepared and mixed so that the contents thereof in all the solvents became 50 mass%, that is, so that the mass ratio of the ether-based solvent to the alcohol-based solvent became 1. In the mixed solvent, alumina abrasive grains (white alumina WA #1000, average particle diameter 12 μm) were mixed so that the content thereof in the polishing solution became 5 mass%, thereby obtaining the polishing solution of example 1.
Examples 2 to 4 and comparative examples 1 to 4
Polishing solutions of examples 2 to 4 and comparative examples 1 to 4 were obtained in the same manner as in example 1, except that the contents of EG and isoBDG were changed so that the mass ratio of the ether solvent to the alcohol solvent was changed to the value shown in table 2.
[ examples 5 to 7]
Polishing solutions of examples 5 to 7 were obtained in the same manner as in example 1 except that diethylene glycol butyl ether (BDG), diethylene glycol isopropyl ether (isoPDG) and triethylene glycol methyl ether (MTG) were used as the ether solvents, and the ether solvents were mixed so that the mass ratio of the ether solvent to the alcohol solvent was 3.
[ grinding conditions ]
The sapphire substrate was polished using the polishing liquids of examples 1 to 7 and comparative examples 1 to 4. The sapphire substrate used was a 2-inch diameter, 3.97 specific gravity, c-plane 3 sapphire substrate.
The grinding is performed by a known double-side grinder. The carrier of the double-side grinder was a glass epoxy plate, the average thickness of which was set to 0.4 mm. The polishing was performed for 10 minutes under the conditions of an upper platen rotation speed of 25rpm, a lower platen rotation speed of 50rpm, and a SUN (SUN) gear rotation speed of 8 rpm. The grinding pressure is set as200g/cm2. At this time, the polishing liquids of examples 1 to 7 and comparative examples 1 to 4 were supplied at a rate of 30 ml/min.
[ evaluation method ]
The viscosity of the polishing liquid was measured, the dispersibility of the sapphire substrate when polished, and the recyclability of the polishing liquid after polishing were evaluated for a part or all of the polishing liquids of examples 1 to 7 and comparative examples 1 to 4. The results are shown in table 2.
< measurement of viscosity >
The viscosities of the respective grinding fluids before use at 25 ℃ were measured for examples 1 to 7 and comparative examples 1 to 4. The viscosity is measured in the solvent before mixing with the abrasive particles. Further, a vibration viscometer ("Viscomate VM-100A" from Shanyi electric machinery Co., Ltd.) was used for the measurement.
< evaluation of dispersibility of grinding fluid >
In the evaluation of the dispersibility of the polishing liquid, the state of the inside of the pipe to which the polishing liquid is supplied during the polishing was visually checked, and the evaluation was performed by the following criteria.
(criterion for evaluation of dispersibility)
A: no abrasive grain retention was observed in the pipe, and the dispersibility of the abrasive grains was excellent.
B: although the retention of the abrasive grains was slightly observed in the pipe, the dispersibility of the abrasive grains was good.
C: the abrasive grains were retained in the pipe, and the dispersibility of the abrasive grains was poor.
< evaluation of the recyclability of grinding fluid >
The grinding chips are separated and recovered from each grinding fluid used for grinding by centrifugal separation, thereby obtaining a grinding fluid from which the grinding chips have been removed. The centrifugation is performed using a bench-top multi-stand centrifuge ("8420" manufactured by kuyaoka corporation).
Fig. 3 shows photographs of the polishing liquid of comparative example 1 before and after the centrifugal separation. In fig. 3, (1) shows the polishing liquid before the centrifugal separation, (2) shows the polishing liquid after the centrifugal separation at a centrifugal force of 210G for 10 minutes, (3) shows the polishing liquid after the centrifugal separation at a centrifugal force of 2280G for 10 minutes, and (4) shows the polishing liquid after the centrifugal separation at a centrifugal force of 2280G for 20 minutes. The recovery efficiency of the centrifugal separation tends to be higher as the centrifugal force is larger and the time of the centrifugal separation is longer as described above, but in the evaluation of the recovery performance of the grinding fluid, the centrifugal separation is performed at a centrifugal force of 1500G for 10 minutes, 20 minutes, and 50 minutes in consideration of the performance and the processing efficiency of the centrifugal separator.
The recyclability of the grinding fluid was evaluated by visually checking the transparency of the grinding fluid after removal of the grinding swarf and using the following criteria. Further, the case where the transparency was 10cm or more was judged to be high in transparency. For example, in the case of (3) and (4) in fig. 3, it is determined that the transparency is high.
(criteria for evaluation of recyclability)
A: the grinding fluid with high transparency is obtained by centrifugal separation for 10 minutes or less, and the recovery performance is excellent.
B: the polishing liquid having high transparency was obtained by centrifugation for more than 10 minutes and 30 minutes or less, and the recyclability was good.
C: the polishing liquid having high transparency cannot be obtained by centrifugation for more than 30 minutes, and the recyclability is poor.
[ Table 2]
In table 2, "-" in the mass ratio in the column of "ether/alcohol" means that it cannot be defined because either the alcohol-based solvent or the ether-based solvent is 0.
From table 2, the grinding fluids of examples 1 to 7 had dispersibility comparable to that of comparative examples 1 and 2, and were excellent in recyclability. The polishing liquids of examples 1 to 7 had comparable recoverability and excellent dispersibility to those of comparative examples 3 and 4. On the other hand, since the polishing solutions of comparative examples 1 and 2 have only the alcohol-based solvent or the ether-based solvent at a mass ratio of less than 1 to the alcohol-based solvent, the viscosity of the solvent as a whole is considered to be high and the recyclability is considered to be poor. The polishing solutions of comparative examples 3 and 4 had only the ether solvent or had a mass ratio of the ether solvent to the alcohol solvent of more than 5, and therefore the viscosity of the solvent as a whole was considered to be low and the dispersibility was considered to be poor.
As is apparent from the above, the grinding fluid can improve the recovery efficiency of centrifugal separation while suppressing the decrease in dispersibility of abrasive grains by setting the mass ratio of the ether solvent to the alcohol solvent to 1 to 5 times.
More specifically, the grinding fluids of examples 2 and 3 were comparable in dispersibility and superior in recyclability to the grinding fluid of example 1, in comparison with examples 1 to 4 in which the ether solvent was isoBDG. The polishing liquids of examples 2 and 3 had comparable recoverability and excellent dispersibility to the polishing liquid of example 4. As is apparent from the above, the polishing liquid can further improve dispersibility and recoverability by setting the mass ratio of the ether solvent to the alcohol solvent to 2 times or more and 4 times or less.
< evaluation of dependency of mean particle size and dependency of content of abrasive grains >
[ example 8]
The polishing solution of example 8 WAs obtained in the same manner as in example 2 except that the alumina abrasive grains added to the mixed solvent were changed to alumina abrasive grains having an average grain size of 7 μm (white alumina WA #2000) in order to evaluate the influence of the average grain size of the abrasive grains on dispersibility and recoverability.
[ examples 9 to 11]
Polishing liquids of examples 9 to 11 were obtained in the same manner as in example 2, except that the content of the alumina abrasive grains added to the mixed solvent was changed to the content shown in table 3 in order to evaluate the influence of the content of the abrasive grains on dispersibility and recoverability.
[ evaluation ]
The dispersibility and the recyclability of the polishing solutions were evaluated in examples 8 to 11. The results are shown in table 3.
[ Table 3]
From the results in table 3, even if the average particle diameter and the content of the abrasive grains were changed, the influence on the dispersibility and the recoverability was small, and the dispersibility and the recoverability in examples 8 to 11 were about the same as those in example 2. As is apparent from the above, the grinding fluid can improve the recovery efficiency of centrifugal separation while suppressing the decrease in dispersibility of the abrasive particles by setting the mass ratio of the ether solvent to the alcohol solvent to 1 to 5 times, regardless of the average particle diameter and content of the abrasive particles.
Industrial applicability
As described above, the grinding fluid of the present invention can improve the recovery efficiency of centrifugal separation while suppressing the decrease in dispersibility when abrasive grains are contained.
Claims (2)
1. A grinding fluid is used for plane grinding of a substrate material, and
comprises an alcohol solvent and an ether solvent,
the total content of the alcohol-based solvent and the ether-based solvent in all the solvents of the polishing solution is 95 to 100 mass%,
the viscosity of all the solvents at 25 ℃ is 7 mPas to 15 mPas,
the ether solvent has a viscosity of 3 mPas to 10 mPas at 25 ℃,
the density of all the solvents at 20 ℃ is 0.7g/cm3Above, 1.1g/cm3In the following, the following description is given,
the ether solvent has a density of 1.1g/cm at 20 ℃3In the following, the following description is given,
the mass ratio of the ether solvent to the alcohol solvent is 1 to 5 times.
2. The grinding fluid of claim 1,
the viscosity of the ether solvent at 25 ℃ is lower than the viscosity of the alcohol solvent,
the difference in viscosity between the ether solvent and the alcohol solvent at 25 ℃ is 15 mPas or more and 20 mPas or less.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2016144915A JP2018012821A (en) | 2016-07-22 | 2016-07-22 | Grinding liquid |
| JP2016-144915 | 2016-07-22 | ||
| PCT/JP2017/024172 WO2018016297A1 (en) | 2016-07-22 | 2017-06-30 | Grinding fluid |
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| CN109312212A CN109312212A (en) | 2019-02-05 |
| CN109312212B true CN109312212B (en) | 2022-01-04 |
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| JP (1) | JP2018012821A (en) |
| CN (1) | CN109312212B (en) |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000198995A (en) * | 1998-12-28 | 2000-07-18 | Fujimi Inc | Working fluid for cutting |
| JP2006111728A (en) * | 2004-10-14 | 2006-04-27 | Palace Chemical Co Ltd | Wire saw cutting oil |
| CN104334675A (en) * | 2012-05-22 | 2015-02-04 | 日立化成株式会社 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
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| JP2010221337A (en) * | 2009-03-24 | 2010-10-07 | Ngk Insulators Ltd | Method for recycling used grinding fluid |
| CN102234595A (en) * | 2010-04-28 | 2011-11-09 | 云南中科鑫圆晶体材料有限公司 | Organic matter cleaning fluid for precisely polished wafer |
| US8828262B2 (en) * | 2010-05-06 | 2014-09-09 | Lawrence Livemore National Security, Llc | Method and system for polishing materials using a nonaqueous magnetorheological fluid |
| US20120053276A1 (en) * | 2010-08-31 | 2012-03-01 | Brilliant Coatings, Inc. | Surface polish and wear coating |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000198995A (en) * | 1998-12-28 | 2000-07-18 | Fujimi Inc | Working fluid for cutting |
| JP2006111728A (en) * | 2004-10-14 | 2006-04-27 | Palace Chemical Co Ltd | Wire saw cutting oil |
| CN104334675A (en) * | 2012-05-22 | 2015-02-04 | 日立化成株式会社 | Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate |
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| WO2018016297A1 (en) | 2018-01-25 |
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| CN109312212A (en) | 2019-02-05 |
| TWI737773B (en) | 2021-09-01 |
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