CN109309280B - 天线模块及制造天线模块的方法 - Google Patents
天线模块及制造天线模块的方法 Download PDFInfo
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- CN109309280B CN109309280B CN201810831914.0A CN201810831914A CN109309280B CN 109309280 B CN109309280 B CN 109309280B CN 201810831914 A CN201810831914 A CN 201810831914A CN 109309280 B CN109309280 B CN 109309280B
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Abstract
本公开提供了一种天线模块及制造天线模块的方法,所述天线模块包括:集成电路(IC),被构造为生成射频(RF)信号;以及基板,包括提供所述基板的第一表面的天线部和提供所述基板的第二表面的电路图案部。所述天线部包括被构造为发送所述RF信号的第一天线构件、对应于所述第一天线构件的腔、分别设置在所述腔中并且分别电连接到所述第一天线构件的通过孔以及设置在所述腔中的至少一个腔中的镀覆构件。所述电路图案部包括电路图案和绝缘层,并且为每个所述通过孔形成到所述IC的电连接路径。
Description
本申请要求分别于2017年7月28日和2017年9月22日提交到韩国知识产权局的第10-2017-0096349号和第10-2017-0122447号韩国专利申请的优先权的权益,所述韩国专利申请的全部公开内容出于所有目的通过引用被包含于此。
技术领域
以下描述涉及一种天线模块和一种制造天线模块的方法。
背景技术
近来,对包括第五代(5G)通信的毫米波(mmWave)通信已经进行了研究,此外,近来已经对能够以合适性能实现毫米波(mmWave)通信的天线模块进行了研究。
发明内容
提供本发明内容以简化的形式对所选择的构思进行介绍,并且下面在具体实施方式中进一步描述所述构思。本发明内容既不意在限定所要求保护的主题的关键特征或必要特征,也不意在用作帮助确定所要求保护的主题的范围。
在一个总体方面,一种天线模块包括:集成电路(IC),被构造为生成射频(RF)信号;以及基板,包括提供所述基板的第一表面的天线部和提供所述基板的第二表面的电路图案部。所述天线部包括被构造为发送所述RF信号的第一天线构件、对应于所述第一天线构件的腔、分别设置在所述腔中并且分别电连接到所述第一天线构件的通过孔以及设置在所述腔中的至少一个腔中的镀覆构件。所述电路图案部包括电路图案和绝缘层,并且为每个所述通过孔形成到所述IC的电连接路径。
所述天线部还可包括至少部分地二维地围绕每个所述腔的绝缘构件。所述绝缘构件的厚度可大于所述绝缘层的厚度。
所述通过孔可形成所述电路图案部和所述第一天线构件中的对应的第一天线构件之间的线性连接。
所述镀覆构件可二维地围绕每个所述腔。
所述天线部还可包括和所述镀覆构件一起至少部分地二维地围绕每个所述腔的屏蔽过孔。
所述天线模块还可包括:介电构件,设置在至少一些所述腔中,并且至少部分地二维地围绕所述通过孔中的对应的通过孔,其中,所述介电构件的介电常数不同于所述绝缘层的介电常数。
所述介电构件的介电损耗因子(Df)可小于所述绝缘层的Df,并且所述介电构件的介电常数(Dk)可小于所述绝缘层的Dk。
所述第一天线构件可设置在对应的所述腔中,并且,所述天线部还可包括:第二天线构件,对应于所述第一天线构件;以及包封构件,至少部分地二维地围绕所述第二天线构件,并且形成所述第一表面。
所述IC可被构造为将通过设置在所述第二表面上的连接器或接收端口接收的信号转换为毫米波(mmWave)段的RF信号。
在另一总体方面,一种制造天线模块的方法包括:切割绝缘构件,从而在所述绝缘构件中形成腔;镀覆所述绝缘构件;在所述腔中形成第一天线构件和通过孔;将所述绝缘构件附着到包括电路图案的电路图案部;以及在所述电路图案部的表面上设置集成电路(IC)。
所述方法还可包括在所述绝缘构件上将包封构件和第二天线构件挤压在一起。
形成第一天线构件和通过孔的步骤可包括将所述通过孔形成为连接到所述第一天线构件中的相应的第一天线构件。将绝缘构件附着到电路图案部的步骤可包括设置所述绝缘构件使得所述通过孔连接到所述电路图案。
在电路图案部的表面上设置IC的步骤可包括使所述IC连接到所述电路图案。
所述方法还包括:在所述腔中设置介电构件使得所述介电构件被所述通过孔中的相应的通过孔贯穿。
通过以下具体实施方式、附图和权利要求,其他特征和方面将是显而易见的。
附图说明
图1是示出根据实施例的天线模块的示图;
图2是示出根据实施例的具有与天线模块中的每个第一天线对应的镀覆结构的天线模块的示图;
图3是示出根据实施例的包括用于IC的模制构件的天线模块的示图;
图4是示出根据实施例的包括连接器、接收端口和屏蔽结构的天线模块的示图;
图5A到图5J是示出根据实施例的制造图2的天线模块的方法的示图;
图6是示出图2的天线模块的第一表面的示图;
图7是示出根据另一实施例的天线模块的第一表面的示图;
图8是示出根据实施例的图7的天线模块的第二表面的示图。
在所有的附图和具体实施方式中,相同的标号指示相同的元件。附图可不按照比例绘制,为了清楚、说明及便利起见,可夸大附图中的元件的相对尺寸、比例和描绘。
具体实施方式
提供以下具体实施方式以帮助读者获得对这里所描述的方法、设备和/或系统的全面理解。然而,在理解本申请的公开内容后,这里所描述的方法、设备和/或系统的各种变换、修改及等同物将是显而易见的。例如,这里所描述的操作顺序仅仅是示例,其并不局限于这里所阐述的顺序,而是除了必须以特定顺序发生的操作之外,可做出在理解本申请的公开内容后将是显而易见的改变。此外,为了提高清楚性和简洁性,可省略本领域中公知的特征的描述。
这里所描述的特征可以以不同的形式实施,并且将不被解释为被这里所描述的示例所限制。更确切的说,提供这里所描述的示例仅仅为示出在理解本申请的公开内容后将是显而易见的实施这里所描述的方法、设备和/或系统的很多可行的方式中的一部分。
在整个说明书中,当诸如层、区域或基板的元件被描述为“位于”另一元件“上”、“连接到”另一元件或“结合到”另一元件时,该元件可以直接“位于”另一元件“上”、直接“连接到”另一元件或直接“结合到”另一元件,或者可存在介于两者之间的一个或更多个其他元件。相比之下,当元件被描述为“直接位于”另一元件“上”、“直接连接到”另一元件或“直接结合到”另一元件时,可不存在介于两者之间的其他元件。
如这里所使用的,术语“和/或”包括相关所列项中的任何一个和任何两个或更多个的任何组合。
尽管可在这里使用诸如“第一”、“第二”和“第三”的术语来描述各种构件、组件、区域、层或部分,但是这些构件、组件、区域、层或部分不受这些术语的限制。更确切地说,这些术语仅用于将一个构件、组件、区域、层或部分与另一构件、组件、区域、层或部分区分开。因而,在不脱离示例的教导的情况下,这里所描述的示例中所称的第一构件、组件、区域、层或部分也可以被称为第二构件、组件、区域、层或部分。
为了易于描述,这里可以使用诸如“在……上方”、“上”、“在……下方”以及“下”的空间相对术语来描述如图中所示的一个元件相对于另一元件的关系。这些空间相对术语意图包含除了图中所示的朝向以外装置在使用或操作中的不同朝向。例如,如果图中的装置翻转,则描述为相对于另一元件在“上方”或“上”的元件于是将相对于另一元件在“下方”或“下”。因而,术语“在……上方”根据装置的空间方向包含上方和下方两种朝向。装置也可以其他方式定位(例如,旋转90度或处于其他朝向),且这里使用的空间相对术语应该被做出相应解释。
这里使用的术语仅用于描述各种示例,不用于限制本公开。除非上下文另外清楚地指出,否则单数形式也意图包括复数形式。术语“包含”、“包括”和“具有”表明存在所陈述的特征、数量、操作、构件、元件和/或它们的组合,但是不排除存在或添加一个或更多个其他特征、数量、操作、构件、元件和/或它们的组合。
由于制造技术和/或公差,附图中所示的形状可能会发生改变。因而,这里所描述的示例不局限于附图中所示的特定形状,而是包括在制造过程中所发生的形状的变化。
这里所描述的示例的特征可以以在理解本申请的公开内容后将是显而易见的各种方式进行组合。此外,尽管这里所描述的示例具有各种配置,但是在理解本申请的公开内容后将是显而易见的其他配置也是可行的。
图1是示出根据实施例的天线模块10的示图。
参照图1,天线模块10的基板具有包括天线区域或天线部100以及电路图案区域或电路图案部200的非均匀(heterogeneous)结构。天线区域(或天线部)100具有有利于提高天线性能的结构,电路图案部200具有设置有至少一个电路图案202和至少一个绝缘层204的结构。天线部100设置在电路图案部200上。
参照图1,天线部100包括第一天线构件115a、115b、115c和115d、通过孔(throughvia)120a、120b、120c和120d、介电构件130a、130b、130c和130d、镀覆构件161和165及屏蔽过孔162、163和164中的至少一些以及第二天线构件110a、110b、110c和110d、绝缘构件140及包封构件150中的至少一些,第一天线构件115a、115b、115c和115d、通过孔120a、120b、120c和120d、介电构件130a、130b、130c和130d、镀覆构件161和165及屏蔽过孔162、163和164中的至少一些设置在腔中。
第二天线构件110a、110b、110c和110d设置为邻近于天线模块10的第一表面(图1中的上表面)或者设置在天线模块10的第一表面上,并且接收射频(RF)信号或者发送从集成电路(IC)300产生的RF信号。也就是说,第二天线构件110a、110b、110c和110d设置在天线部100的上表面上。
第一天线构件115a、115b、115c和115d电磁耦合到对应的第二天线构件110a、110b、110c和110d,以将RF信号发送到对应的第二天线构件或者从对应的第二天线构件接收RF信号。
例如,第一天线构件115a、115b、115c和115d可具有与对应的第二天线构件的形状相似的形状,并且可以提高对应的第二天线构件的诸如方向性的天线性能。
根据设计,第二天线构件110a、110b、110c和110d与第一天线构件115a、115b、115c和115d中的一者可省略。此外,天线部100还可包括分别与第二天线构件110a、110b、110c和110d对应的另外的天线构件。
通过孔120a、120b、120c和120d可电连接到对应的第一天线构件,以为RF信号提供路径,通过孔120a、120b、120c和120d可延伸为比电路图案部200的每个绝缘层的厚度大的长度。因此,RF信号的传输效率可被提高。
介电构件130a、130b、130c和130d被对应的通过孔120a、120b、120c和120d贯穿并且可至少部分地二维地围绕对应的通过孔120a、120b、120c和120d。介电构件130a、130b、130c和130d设置在电路图案部200的上表面上。介电构件130a、130b、130c和130d的厚度可大于电路图案部200的每个绝缘层204的厚度。
由于通过孔120a、120b、120c和120d的长度和介电构件130a、130b、130c和130d的厚度,可自由地设计用于对应的第一天线构件和第二天线构件的发送和接收RF信号的操作的边界条件。因此,通过孔120a、120b、120c和120d和介电构件130a、130b、130c和130d具有适合于对应的第一天线构件115a、115b、115c和115d以及第二天线构件110a、110b、110c和110d的发送和接收RF信号的操作的边界条件(例如,作为非限制性示例,小的制造公差,短的电气长度,光滑的表面,大尺寸的腔和低的介电常数),使得第一天线构件115a、115b、115c和115d以及第二天线构件110a、110b、110c和110d的天线性能提高。
例如,介电构件130a、130b、130c和130d可利用具有介电损耗因子(Df)的材料(诸如石英或聚四氟乙烯)和/或具有低介电常数(Dk)的材料形成。因此,对应的第一天线构件115a、115b、115c和115d以及第二天线构件110a、110b、110c和110d的天线性能进一步提高。此外,介电构件130a、130b、130c和130d的介电常数可不同于绝缘层204的介电常数。介电构件130a、130b、130c和130d的Df可小于绝缘层204的Df,介电构件130a、130b、130c和130d的Dk可小于绝缘层204的Dk。
绝缘构件140可具有与介电构件130a、130b、130c和130d的厚度近似的厚度。例如,绝缘构件140利用与电路图案部200的绝缘层204的材料相同的材料形成,并且可实现为覆铜层压板(CCL)。
包封构件150围绕第二天线构件110a、110b、110c和110d并且可插入到介电构件130a、130b、130c和130d和绝缘构件140之间的间隙中(例如,图2中所示)。也就是说,包封构件150提高了天线部100的稳定性。
镀覆构件161和165设置在介电构件130a、130b、130c和130d与绝缘构件140之间。
镀覆构件161和165提供适合于第一天线构件115a、115b、115c和115d以及第二天线构件110a、110b、110c和110d的发送和接收RF信号的操作的边界条件,并且改善腔之间的隔离,使得第一天线构件115a、115b、115c和115d以及第二天线构件110a、110b、110c和110d的天线性能提高。
屏蔽过孔162、163和164设置在介电构件130a、130b、130c和130d之间。屏蔽过孔162、163和164设置为和镀覆构件161和165一起二维地围绕或者部分围绕每个腔。
镀覆构件161和165以及屏蔽过孔162、163和164提供适合于对应的第一天线构件115a、115b、115c和115d以及对应的第二天线构件110a、110b、110c和110d中的每个的发送和接收RF信号的操作的边界条件,并且进一步地改善腔之间的隔离,使得对应的第一天线构件115a、115b、115c和115d以及对应的第二天线构件110a、110b、110c和110d的天线性能提高。
电路图案部200提供通过孔120a、120b、120c和120d中的每个到IC 300的电连接路径。也就是说,通过孔120a、120b、120c和120d分别连接到第一天线构件115a、115b、115c和115d,并且连接到至少一个电路图案202,以提供第一天线构件115a、115b、115c和115d与至少一个电路图案202之间的相应的线性电连接路径。此外,电路图案部200可提供支持IC300的接地区域和/或电源区域,并且可提供子基板400a和400b以及IC 300之间的电连接路径。
例如,电路图案部200具有与印刷电路板(PCB)的铜重新分布层(RDL)相似的结构。另一方面,电路图案部200中的电路图案202的具体形式不限于在图1中所示的形式。例如,电路图案202包括彼此电隔离并且将对应的通过孔电连接到IC 300的馈线。
参照图1,IC 300、焊球310、树脂320、电子组件350a和350b以及子基板400a和400b中的至少一些设置在天线模块10的第二表面(图1中的下表面)上。也就是说,IC 300、焊球310、树脂320、电子组件350a和350b以及子基板400a和400b中的至少一些设置在电路图案部200的下表面上。
IC 300可生成RF信号以及接收通过第二天线构件110a、110b、110c和110d接收到的RF信号。例如,IC 300通过子基板400a和400b接收低频信号,并且对低频信号执行频率转换、放大、滤波相位控制和发电中的任何一个或任何两个或更多个的任何组合,并且将低频信号转换为毫米波(mmWave)段的RF信号。
焊球310将IC 300电连接到电路图案部200的电路图案202以及将电路图案202电连接到子基板400a和400b。
树脂320提高了IC 300的对于天线模块的第二表面(图1中的下表面)的设置稳定性。
电子组件350a和350b向IC 300提供电阻值、电容和电感中的任何一个或任何两个或更多个的任何组合。例如,电子组件350a和350b可包括多层陶瓷电容器(MLCC)。
子基板400a和400b接收低频信号和/或电力,将低频信号和/或电力发送到IC300,并且通过焊球310电连接到电路图案部200的电路图案202。
例如,子基板400a包括至少一个电路图案410a、至少一个绝缘层420a以及外部连接焊球430a,子基板400b包括至少一个电路图案410b、至少一个绝缘层420b以及外部连接焊球430b。
图2是示出包括对应于第一天线构件115a、115b、115c和115d中的每个的镀覆结构的天线模块10'的示图。
参照图2,天线部100'包括绝缘构件140和第二绝缘构件141、第三绝缘构件142和第四绝缘构件143。第二至第四绝缘构件141、142和143被对应的镀覆构件162a、163a和164a围绕或者部分地围绕。
也就是说,绝缘构件140和第二绝缘构件141可二维地围绕或者部分围绕第一腔,第二绝缘构件141和第三绝缘构件142可二维地围绕或者部分围绕第二腔,第三绝缘构件142和第四绝缘构件143可二维地围绕或者部分围绕第三腔,第四绝缘构件143和绝缘构件140可二维地围绕或者部分围绕第四腔。在这个示例中,镀覆构件161、162a、163a、164a和165可二维地围绕或部分围绕第一腔至第四腔中的每个。
图3是示出包括用于IC 300的模制构件330的天线模块10”的示图。
参照图3,在天线模块10”中,IC 300和电子组件350a和350b至少部分地被模制构件330覆盖或围绕,以保护IC 300和电子组件350a和350b不受外部环境的影响。可利用环氧模塑料来形成模制构件330。
图4是示出包括连接器500、接收端口600和屏蔽罩700的天线模块10”'的示图。
参照图4,连接器500可被构造为以有线方式结合到外部组件、另一模块或者另一基板。
接收端口600也可被构造为电磁结合到外部组件、另一模块或者另一基板,并且可接收低频信号和/或电力并将低频信号和/或电力发送到IC 300。
屏蔽罩700围绕IC 300以保护IC 300不受外部噪声干扰。
图5A到图5J是示出根据实施例的制造天线模块10'的方法的示图。
参照图5A和图5B,首先,切割绝缘片40和设置在绝缘片40的上表面和下表面上的铜箔层166和167,形成绝缘构件140以及第二至第四绝缘构件141、142和143,以形成腔C1、C2、C3和C4。然而,在图1中所示的天线模块10的制造过程中,省略第二至第四绝缘构件141、142和143。
如图5C中所示,腔C1、C2、C3和C4分别设有镀覆构件161、162a、163a、164a和165。分别在绝缘构件140、141、142和143上设置镀覆构件161、162a、163a、164a和165。在图1中所示的天线模块10的制造过程中,省略与第二至第四绝缘构件141、142和143对应的镀覆构件162a、163a和164a。
参照图5D,将粘附构件170敷设到绝缘构件140。
参照图5E,在相应的腔C1、C2、C3和C4中设置第一天线构件115a、115b、115c和115d、通过孔120a、120b、120c和120d以及介电构件130a、130b、130c和130d。在图1中所示的天线模块10的制造过程中,屏蔽过孔162、163和164被布置为贯穿对应的介电构件130a、130b、130c和130d。
参照图5F,在绝缘构件140、141、142和143、第一天线构件115a、115b、115c和115d以及介电构件130a、130b、130c和130d的上表面上叠置膜180以及包封构件150,膜180包括附着到其下表面的第二天线构件110a、110b、110c和110d。参照图5G,接着,挤压绝缘构件140、包封构件150、第二天线构件110a、110b、110c和110d以及膜180,以使第二天线构件110a、110b、110c和110d被压入到包封构件150中,从而形成天线部100'。在这个示例中,可以利用扇出型面板级封装(FOPLP)技术的层压法。
接着,如图5H中所示,移除膜180,以及从天线部100'的下表面移除粘附构件170。
如图5I中所示,将电路图案部200附着到天线部100'的下表面。在这个示例中,电路重新分布层(RDL)可通过FOPLP技术形成。
如图5J中所示,将焊球310、IC 300、电子组件350以及子基板400a和400b设置于图5I中所示的电路图案部200。焊球310由树脂320(图2)包围。
图6是示出图2中所示的天线模块10'的第一表面的示图。
参照图6,第二天线构件110a、110b、110c、110d、110e、110f、110g、110h、110i、110j、110k、110l、110m、110n、110o和110p中的每个被对应的镀覆构件160a、160b、160c、160d、160e、160f、160g、160h、160i、160j、160k、160l、160m、160n、160o和160p围绕。镀覆构件160a、160b、160c、160d、160e、160f、160g、160h、160i、160j、160k、160l、160m、160n、160o和160p提供适合于对应的第二天线构件110a、110b、110c、110d、110e、110f、110g、110h、110i、110j、110k、110l、110m、110n、110o和110p的发送和接收RF信号的操作的边界条件,以使对应的第二天线构件的天线性能提高。
图7是示出根据另一实施例的天线模块的第一表面的示图。
参照图7,第二天线构件110-1、110-2、110-3、110-4、110-5、110-6、110-7、110-8和110-9被对应的镀覆构件和对应的屏蔽过孔中的至少一者围绕。也就是说,镀覆构件160-1、160-2、160-3、160-4、160-6、160-7、160-8和160-9以及屏蔽过孔190-1、190-2、190-3、190-4、190-5、190-6、190-7、190-8和190-9提供适合于对应的第二天线构件110-1、110-2、110-3、110-4、110-5、110-6、110-7、110-8和110-9的发送和接收RF信号的操作的边界条件,以使对应的第二天线构件110-1、110-2、110-3、110-4、110-5、110-6、110-7、110-8和110-9的天线性能提高。
镀覆构件160-1、160-2、160-3、160-4、160-6、160-7、160-8和160-9可比屏蔽过孔190-1、190-2、190-3、190-4、190-6、190-7、190-8和190-9更加完整地围绕对应的第二天线构件110-1、110-2、110-3、110-4、110-6、110-7、110-8和110-9。也就是说,被镀覆构件完整地围绕的第二天线构件的性能可优于被屏蔽过孔围绕的第二天线构件的性能。
形成屏蔽过孔的工艺可比形成镀覆构件的工艺更简单。因此,可根据天线模块需求的性能和成本适当地选择镀覆构件和屏蔽过孔。
图6和图7中所示的第二天线构件的数量、设置和形状不被具体地限制。例如,图6中所示的多个第二天线构件的形状可为圆形,图7中所示的第二天线构件的数量可为四个。
当省略根据图6和图7的天线模块中的第二天线构件时,上面所述的第二天线构件的构造可适用于第一天线构件(例如,图1-图4中所示的第一天线构件115a、115b、115c和115d)。
图8是示出根据实施例的天线模块的第二表面的示图。
参照图8,IC 300和电子组件350被子基板400围绕。电子组件350可包括图1至图4中所示的电子组件350a和350b,并且子基板400可包括图1至图4中所示的子基板400a和400b。
如上所阐述的,根据在此公开的实施例,天线模块和制造天线模块的方法提高了腔提供给多个天线的边界条件的自由度,并且提高了腔之间的隔离度,从而提高天线的性能。
此外,所公开的天线模块和制造天线模块的方法通过使用具有有助于改善天线性能的天线部和有助于形成电路图案的电路图案部的基板,提供了容易小型化的结构同时具有高水平的天线性能。
虽然本公开包括具体示例,但是在理解本申请的公开内容之后将显而易见的是,在不脱离权利要求以及其等同物的精神和范围的情况下,可在形式和细节方面对这些示例做出各种改变。在此描述的示例应该被认为仅仅是描述意义上的,而非出于限制的目的。在每个示例中的特征或方面的描述将被视为可适用于其他示例中的类似的特征或方面。如果按照不同的顺序执行描述的技术、和/或如果按照不同的方式来组合所描述的系统、架构、装置或电路中的组件、和/或由其他组件或其等同物来替换或增添所描述的系统、架构、装置或电路中的组件,则可获得适宜的结果。因此,本公开的范围不由具体实施方式限定,而是由权利要求及其等同物限定,并且在权利要求及其等同物的范围内的全部改变将被理解为被包括在本公开中。
Claims (14)
1.一种天线模块,包括:
集成电路,被构造为生成射频信号;以及
基板,包括提供所述基板的第一表面的天线部和提供所述基板的第二表面的电路图案部;
其中,所述天线部包括被构造为发送所述射频信号的第一天线构件、对应于所述第一天线构件的腔、分别设置在所述腔中并且分别电连接到所述第一天线构件的通过孔、至少部分地二维地围绕每个所述腔的绝缘构件以及设置在所述腔中的至少一个腔中的镀覆构件,所述镀覆构件至少部分地二维地围绕所述通过孔,并且
其中,所述电路图案部包括电路图案和绝缘层,并且为每个所述通过孔形成到所述集成电路的电连接路径,
所述天线模块还包括介电构件,所述介电构件设置在所述腔中的至少一个腔中,并且所述介电构件的介电常数不同于所述绝缘构件的介电常数。
2.根据权利要求1所述的天线模块,其中,
所述绝缘构件的厚度大于所述绝缘层的厚度。
3.根据权利要求2所述的天线模块,其中,所述通过孔形成所述电路图案部和所述第一天线构件中的对应的第一天线构件之间的线性连接。
4.根据权利要求1所述的天线模块,其中,所述镀覆构件二维地围绕每个所述腔。
5.根据权利要求1所述的天线模块,其中,所述天线部还包括和所述镀覆构件一起至少部分地二维地围绕每个所述腔的屏蔽过孔。
6.根据权利要求1所述的天线模块,其中,
所述介电构件至少部分地二维地围绕所述通过孔中的对应的通过孔,并且,
其中,所述介电构件的介电常数不同于所述绝缘层的介电常数,并且所述介电构件利用石英或聚四氟乙烯形成。
7.根据权利要求1至6中任一项所述的天线模块,其中,所述介电构件的介电损耗因子小于所述绝缘层的介电损耗因子和/或所述绝缘构件的介电损耗因子,并且所述介电构件的介电常数小于所述绝缘层的介电常数和/或所述绝缘构件的介电常数。
8.根据权利要求1所述的天线模块,其中,
所述第一天线构件设置在对应的所述腔中,并且,
所述天线部还包括:第二天线构件,对应于所述第一天线构件;以及包封构件,至少部分地二维地围绕所述第二天线构件,并且形成所述第一表面。
9.根据权利要求1所述的天线模块,其中,所述集成电路被构造为将通过设置在所述第二表面上的连接器或接收端口接收的信号转换为毫米波段的射频信号。
10.一种制造天线模块的方法,包括:
切割绝缘构件,从而在所述绝缘构件中形成腔,并且使所述绝缘构件围绕所述腔;
镀覆所述绝缘构件以形成围绕所述腔的镀覆构件;
在所述腔中形成第一天线构件和通过孔;
在所述腔中的至少一个腔中设置介电构件,其中,所述介电构件的介电常数不同于所述绝缘构件的介电常数;
将所述绝缘构件附着到包括电路图案的电路图案部;以及
在所述电路图案部的表面上设置集成电路。
11.根据权利要求10所述的方法,还包括:
在所述绝缘构件上将包封构件和第二天线构件挤压在一起。
12.根据权利要求10所述的方法,其中,
形成第一天线构件和通过孔的步骤包括将所述通过孔形成为连接到所述第一天线构件中的相应的第一天线构件,
将绝缘构件附着到电路图案部的步骤包括设置所述绝缘构件使得所述通过孔连接到所述电路图案。
13.根据权利要求12所述的方法,其中,在电路图案部的表面上设置集成电路的步骤包括使所述集成电路连接到所述电路图案。
14.根据权利要求10所述的方法,其中,在所述腔中的至少一个腔中设置介电构件使得所述介电构件被所述通过孔中的相应的通过孔贯穿,其中,利用石英或聚四氟乙烯形成所述介电构件。
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US11095037B2 (en) | 2017-08-11 | 2021-08-17 | Samsung Electro-Mechanics Co., Ltd. | Antenna module |
US20200212536A1 (en) * | 2018-12-31 | 2020-07-02 | Texas Instruments Incorporated | Wireless communication device with antenna on package |
WO2020200445A1 (en) * | 2019-04-03 | 2020-10-08 | Huawei Technologies Co., Ltd. | Antenna device and method of its fabrication |
US11431107B2 (en) | 2019-04-11 | 2022-08-30 | Samsung Electro-Mechanics Co., Ltd. | Chip antenna module and method of manufacturing chip antenna module |
US11417959B2 (en) | 2019-04-11 | 2022-08-16 | Samsung Electro-Mechanics Co., Ltd. | Chip antenna module and electronic device |
WO2020250795A1 (ja) * | 2019-06-10 | 2020-12-17 | 株式会社ライジングテクノロジーズ | 電子回路装置 |
CN112420526B (zh) * | 2019-08-20 | 2024-07-02 | 江苏长电科技股份有限公司 | 双基板叠层结构及其封装方法 |
CN112421206A (zh) * | 2019-08-20 | 2021-02-26 | 江苏长电科技股份有限公司 | 双基板叠层结构及其封装方法 |
KR102603106B1 (ko) | 2019-09-04 | 2023-11-15 | 삼성전기주식회사 | 어레이 안테나 |
KR20220006785A (ko) | 2020-07-09 | 2022-01-18 | 삼성전기주식회사 | 안테나 모듈 |
US11557544B2 (en) * | 2020-08-27 | 2023-01-17 | Nxp Usa, Inc. | Semiconductor device having a translation feature and method therefor |
US20230268295A1 (en) * | 2022-02-18 | 2023-08-24 | Advanced Semiconductor Engineering, Inc. | Semiconductor device and method of manufacturing the same |
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US20190036232A1 (en) | 2019-01-31 |
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