CN109301692A - Include micro- disk cavity laser and preparation method thereof of silver telluride quantum dot - Google Patents
Include micro- disk cavity laser and preparation method thereof of silver telluride quantum dot Download PDFInfo
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- CN109301692A CN109301692A CN201811193809.5A CN201811193809A CN109301692A CN 109301692 A CN109301692 A CN 109301692A CN 201811193809 A CN201811193809 A CN 201811193809A CN 109301692 A CN109301692 A CN 109301692A
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- Prior art keywords
- quantum dot
- silver telluride
- telluride quantum
- micro
- silica
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
Abstract
The invention discloses a kind of micro- disk cavity laser and preparation method thereof for including silver telluride quantum dot, which includes the silicon substrate being arranged upwards in turn, silicon cylinder and the silica discs for including silver telluride quantum dot.The present invention substitutes the lead salt quantum dot of the minimum weight of quantum state 8 degeneracy using the silver telluride quantum dot of the 2 weight degeneracy of minimum quantum state of low toxicity, to realize the near infrared light gain of Low threshold.Quantum dot is embedded in silica to can be avoided and coats the decline of quantum dot bring quality factor on micro- disk chamber.Micro- disk chamber is prepared with the silica membrane for including silver telluride quantum dot, can finally obtain Low threshold, high-quality-factor and environmental-friendly micro- disk chamber near-infrared quantum dot laser.
Description
Technical field
The present invention relates to a kind of micro- disk cavity lasers and preparation method thereof for including silver telluride quantum dot, belong to semiconductor light
The technical field of electronic device.
Background technique
Near infrared laser can be widely applied to the fields such as optic communication, remote sensing and the generation of relevant plasma.The amount of benefiting from
Sub- confinement effect, semiconductor-quantum-point has shown a variety of superior performances as optical gain material, such as launch wavelength is with ruler
The laser activity of very little adjustable, potential low laser threshold and temperature-insensitive.Currently, utilizing the close red of molecular beam epitaxy preparation
Outer quantum dot laser has begun business application.Compared to the quantum dot of epitaxial growth, Colloidal Quantum Dots have smaller ruler
Very little and more uniform size distribution, thus there is stronger quantum confined effect and narrower emission peak.The most common near-infrared
Emitting Colloidal Quantum Dots is lead salt (vulcanized lead, lead selenide and lead telluride) quantum dot.They are rock-salt type structure, in Brillouin zone
L point have 4 equivalent energy band minimum values.Considering that 2 spin degeneracy again, the minimum quantum state of lead salt quantum dot is 8 weight degeneracys,
Exciton number in average each quantum dot will be more than 4 to be just able to achieve population inversion.This makes the gain of light threshold value of lead salt quantum dot
It is high, it is difficult to realize the gain of light.Currently, there is an urgent need to search out the novel Colloidal Quantum Dots of one kind to realize the close red of Low threshold
The outer gain of light.
In recent years, the silver telluride quantum dot of less toxic 2 weight degeneracy of minimum quantum state in the second infrared window due to having
Excellent photoluminescent property and cause strong concern.At present about the research of silver telluride quantum dot focus on mostly preparation method with
And cytotoxicity, it is not yet had been reported that in the potential application of laser field.
Micro- disk cavity laser has many advantages, such as that quality factor is high, prepares convenient and integrability.However Colloidal Quantum Dots with
The coupling of micro- disk chamber could not be realized always well.Currently, most common way is that quantum dot is coated in the dioxy prepared
On the micro- disk chamber of SiClx, the quality factor of micro- disk chamber can be significantly reduced in this way.
Summary of the invention
The object of the present invention is to provide a kind of micro- disk cavity lasers and preparation method thereof for including silver telluride quantum dot, to obtain
Obtain Low threshold, high-quality-factor and environmental-friendly micro- disk chamber near-infrared quantum dot laser.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of micro- disk cavity laser including silver telluride quantum dot, including be arranged upwards in turn silicon substrate, silicon cylinder and
Include the silica discs of silver telluride quantum dot.
The silica discs for including silver telluride quantum dot are by silica discs and are embedded in the silica discs
In silver telluride quantum dot composition.
The silver telluride quantum dot is uniformly distributed in silica discs.
The silver telluride quantum dot is as optical gain medium.
The area of the silicon cylinder upper bottom surface is less than the area for including the silica discs bottom surface of silver telluride quantum dot.
A kind of preparation method for the micro- disk cavity laser including silver telluride quantum dot, comprising the following steps:
(1) silver telluride quantum dot is prepared using high temperature thermal decomposition method；
(2) it disperses the silver telluride quantum dot that step (1) obtains in toluene, then the toluene of silver telluride quantum dot is dispersed
Liquid is mixed with Perhydropolysilazane, is then spin coated on silicon substrate and is obtained the silicon dioxide film for including quantum dot；
(3) silicon dioxide film for including silver telluride quantum dot is etched into using reactive ion dry etching and includes silver telluride
The silica discs of quantum dot；
(4) the silicon cylinder of support silica discs is obtained with the silicon below xenon difluoride etching silicon dioxide disk.
The utility model has the advantages that silver telluride quantum dot is monocline crystal phase, minimum quantum state only has 2 to spin again degeneracy, can be realized low
The near infrared light gain of threshold value.
Quantum dot is embedded in silica to can be avoided and coats the decline of quantum dot bring quality factor on micro- disk chamber.
Perhydropolysilazane is a kind of novel coating material, can be converted into inorganic silicon dioxide at room temperature in atmospheric atmosphere.
The mixed liquor of spin coating quantum dot and Perhydropolysilazane can obtain the silica membrane for including quantum dot of high quality, for system
Micro- disk chamber quantum dot laser of standby high-quality-factor provides condition.
The present invention substitutes the heavy degeneracy of minimum quantum state 8 using the silver telluride quantum dot of the 2 weight degeneracy of minimum quantum state of low toxicity
Lead salt quantum dot, to realize the near infrared light gain of Low threshold.Quantum dot, which is embedded in silica, can be avoided in micro- disk
The decline of quantum dot bring quality factor is coated on chamber.Micro- disk chamber is prepared with the silica membrane for including silver telluride quantum dot,
Low threshold, high-quality-factor and environmental-friendly micro- disk chamber near-infrared quantum dot laser can finally be obtained.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silver telluride quantum dot；
Fig. 2 is the structural schematic diagram for including micro- disk cavity laser of silver telluride quantum dot.
In figure: 1- silver telluride quantum dot, 2- silicon substrate, 3- silicon cylinder, 4- include the silica circle of silver telluride quantum dot
Disk.
Specific embodiment
Further explanation is done to the present invention with reference to the accompanying drawing.
As shown in Figure 1, the micro- disk cavity laser for including silver telluride quantum dot of the invention, including the silicon being arranged upwards in turn
Substrate 2, silicon cylinder 3 and the silica discs 4 for including silver telluride quantum dot.
The silica discs 4 of silver telluride quantum dot are included by silica discs and are embedded in the silica discs
Silver telluride quantum dot 1 forms.Silver telluride quantum dot 1 is uniformly distributed in silica discs.Such as Fig. 1 institute of silver telluride quantum dot 1
Show.Silver telluride quantum dot 1 is optical gain medium, and less toxic minimum quantum state only 2 spins 1 energy of silver telluride quantum dot of degeneracy again
Enough realize the near infrared light gain of Low threshold.Silver telluride quantum dot 1 is embedded in can be avoided in silica and is applied on micro- disk chamber
Cover the decline of quantum dot bring quality factor.Have benefited from including the silica discs of quantum dot and the refringence of air, light
Inner sidewall oscillation and amplification of the field along the silica discs 4 for including silver telluride quantum dot.
The area of 3 upper bottom surface of silicon cylinder is less than the area for including 4 bottom surface of silica discs of silver telluride quantum dot, silicon
Cylinder 3 is isolated by the silica discs 4 for including silver telluride quantum dot and silicon base 2, prevents light field from including silver telluride/telluride
The silica discs 4 of silver-colored zinc core-shell quanta dots leak into silicon base 2.
The preparation method of the micro- disk cavity laser for including silver telluride quantum dot of the invention, comprising the following steps:
(1) silver telluride quantum dot is prepared using high temperature thermal decomposition method；
(2) it disperses the silver telluride quantum dot that step (1) obtains in toluene by the mass ratio of 1:5, then presses the quality of 1:1
Than mixing the toluene dispersion liquid of silver telluride quantum dot with Perhydropolysilazane, it is then spin coated on silicon substrate to obtain interior content
The silicon dioxide film of son point；
(3) silicon dioxide film for including silver telluride quantum dot is etched into using reactive ion dry etching and includes silver telluride
The silica discs of quantum dot；
(4) the silicon cylinder of support silica discs is obtained with the silicon below xenon difluoride etching silicon dioxide disk.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (6)
1. a kind of micro- disk cavity laser for including silver telluride quantum dot, it is characterised in that: including the silicon substrate being arranged upwards in turn
(2), silicon cylinder (3) and the silica discs (4) of silver telluride quantum dot are included.
2. the micro- disk cavity laser according to claim 1 for including silver telluride quantum dot, it is characterised in that: described to include tellurium
Change the silica discs (4) of silver-colored quantum dot by silica discs and the silver telluride quantum dot being embedded in the silica discs
(1) it forms.
3. the micro- disk cavity laser according to claim 2 for including silver telluride quantum dot, it is characterised in that: the silver telluride
Quantum dot (1) is uniformly distributed in silica discs.
4. the micro- disk cavity laser according to claim 1 for including silver telluride quantum dot, it is characterised in that: the silver telluride
Quantum dot (1) is used as optical gain medium.
5. the micro- disk cavity laser according to claim 1 for including silver telluride quantum dot, it is characterised in that: the silicon cylinder
(3) area of upper bottom surface is less than the area for including silica discs (4) bottom surface of silver telluride quantum dot.
6. a kind of preparation method for the micro- disk cavity laser for including silver telluride quantum dot, it is characterised in that: the following steps are included:
(1) silver telluride quantum dot is prepared using high temperature thermal decomposition method；
(2) disperse the silver telluride quantum dot that step (1) obtains in toluene, then by the toluene dispersion liquid of silver telluride quantum dot with
Perhydropolysilazane mixing, is then spin coated on silicon substrate and obtains the silicon dioxide film for including quantum dot；
(3) silicon dioxide film for including silver telluride quantum dot is etched into using reactive ion dry etching and includes silver telluride quantum
The silica discs of point；
(4) the silicon cylinder of support silica discs is obtained with the silicon below xenon difluoride etching silicon dioxide disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811193809.5A CN109301692A (en) | 2018-10-15 | 2018-10-15 | Include micro- disk cavity laser and preparation method thereof of silver telluride quantum dot |
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| CN201811193809.5A CN109301692A (en) | 2018-10-15 | 2018-10-15 | Include micro- disk cavity laser and preparation method thereof of silver telluride quantum dot |
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| CN109301692A true CN109301692A (en) | 2019-02-01 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| CN104466657A (en) * | 2014-11-07 | 2015-03-25 | 南京大学 | Chip-integrated 2-micrometer wavelength micro laser |
| CN104861864A (en) * | 2014-02-20 | 2015-08-26 | 韩国科学技术研究院 | Coating composisiotn having polysilazane and wavelength converting agent and wavelength converting sheet prepared using the same |
| CN105264042A (en) * | 2013-06-05 | 2016-01-20 | 柯尼卡美能达株式会社 | Optical material, optical film, and light-emitting device |
| CN106190126A (en) * | 2015-05-04 | 2016-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Single dispersing near-infrared silver telluride quantum dot and preparation method thereof |
| CN106199789A (en) * | 2015-07-22 | 2016-12-07 | 宁波激智科技股份有限公司 | A kind of prism film of stimulated luminescence |
-
2018
- 2018-10-15 CN CN201811193809.5A patent/CN109301692A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102718180A (en) * | 2012-06-28 | 2012-10-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof |
| CN105264042A (en) * | 2013-06-05 | 2016-01-20 | 柯尼卡美能达株式会社 | Optical material, optical film, and light-emitting device |
| CN104861864A (en) * | 2014-02-20 | 2015-08-26 | 韩国科学技术研究院 | Coating composisiotn having polysilazane and wavelength converting agent and wavelength converting sheet prepared using the same |
| CN104466657A (en) * | 2014-11-07 | 2015-03-25 | 南京大学 | Chip-integrated 2-micrometer wavelength micro laser |
| CN106190126A (en) * | 2015-05-04 | 2016-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Single dispersing near-infrared silver telluride quantum dot and preparation method thereof |
| CN106199789A (en) * | 2015-07-22 | 2016-12-07 | 宁波激智科技股份有限公司 | A kind of prism film of stimulated luminescence |
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