CN109286132A - Include the distributed feedback laser and preparation method thereof of silver telluride quantum dot - Google Patents
Include the distributed feedback laser and preparation method thereof of silver telluride quantum dot Download PDFInfo
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- CN109286132A CN109286132A CN201811193785.3A CN201811193785A CN109286132A CN 109286132 A CN109286132 A CN 109286132A CN 201811193785 A CN201811193785 A CN 201811193785A CN 109286132 A CN109286132 A CN 109286132A
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- Prior art keywords
- quantum dot
- silver telluride
- telluride quantum
- silica
- distributed feedback
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of distributed feedback laser and preparation method thereof for including silver telluride quantum dot, which includes the quartz base plate being arranged upwards in turn, the silica periodic optical grating for including silver telluride quantum dot.The present invention substitutes the lead salt quantum dot of the minimum weight of quantum state 8 degeneracy using the silver telluride quantum dot of the 2 weight degeneracy of minimum quantum state of low toxicity, to realize the near infrared light gain of Low threshold.The photo and thermal stability of silica is much higher than organic polymer.With the silica membrane manufacturing cycle grating for including silver telluride quantum dot, Low threshold, high stability and environmental-friendly distributed feed-back near-infrared quantum dot laser can be finally obtained.
Description
Technical field
The present invention relates to a kind of distributed feedback lasers and preparation method thereof for including silver telluride quantum dot, belong to semiconductor
The technical field of opto-electronic device.
Background technique
Near infrared laser can be widely applied to the fields such as optic communication, remote sensing and the generation of relevant plasma.The amount of benefiting from
Sub- confinement effect, semiconductor-quantum-point has shown a variety of superior performances as optical gain material, such as launch wavelength is with ruler
The laser activity of very little adjustable, potential low laser threshold and temperature-insensitive.Currently, utilizing the close red of molecular beam epitaxy preparation
Outer quantum dot laser has begun business application.Compared to the quantum dot of epitaxial growth, Colloidal Quantum Dots have smaller ruler
Very little and more uniform size distribution, thus there is stronger quantum confined effect and narrower emission peak.The most common near-infrared
Emitting Colloidal Quantum Dots is lead salt (vulcanized lead, lead selenide and lead telluride) quantum dot.They are rock-salt type structure, in Brillouin zone
L point have 4 equivalent energy band minimum values.Considering that 2 spin degeneracy again, the minimum quantum state of lead salt quantum dot is 8 weight degeneracys,
Exciton number in average each quantum dot will be more than 4 to be just able to achieve population inversion.This makes the gain of light threshold value of lead salt quantum dot
It is high, it is difficult to realize the gain of light.Currently, there is an urgent need to search out the novel Colloidal Quantum Dots of one kind to realize the close red of Low threshold
The outer gain of light.
In recent years, the silver telluride quantum dot of less toxic 2 weight degeneracy of minimum quantum state in the second infrared window due to having
Excellent photoluminescent property and cause strong concern.At present about the research of silver telluride quantum dot focus on mostly preparation method with
And cytotoxicity, it is not yet had been reported that in the potential application of laser field.
Distributed feedback laser has many advantages, such as to support that single-mode output, to prepare convenient and integrated level high.Currently, including colloid
The distributed feedback laser of quantum dot is by the way that the organic polymer thin film for including quantum dot is processed into periodic optical grating system mostly
?.The photo and thermal stability of organic polymer is poor, this affects the stability of laser and service life.
Summary of the invention
The object of the present invention is to provide a kind of distributed feedback laser and preparation method thereof for including silver telluride quantum dot, with
Obtain Low threshold, high stability and environmental-friendly distributed feed-back near-infrared quantum dot laser.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of distributed feedback laser including silver telluride quantum dot, including be arranged upwards in turn quartz base plate, include
The silica periodic optical grating of silver telluride quantum dot.
The silica periodic optical grating for including silver telluride quantum dot is by silica periodic optical grating and is embedded in the dioxy
Silver telluride quantum dot composition in SiClx periodic optical grating.
The silver telluride quantum dot is uniformly distributed in silica periodic optical grating.
The silver telluride quantum dot is as optical gain medium.
A kind of preparation method for the distributed feedback laser including silver telluride quantum dot, comprising the following steps:
(1) silver telluride quantum dot is prepared using high temperature thermal decomposition method;
(2) it disperses the silver telluride quantum dot that step (1) obtains in toluene, then the toluene of silver telluride quantum dot is dispersed
Liquid is mixed with Perhydropolysilazane, is then spin coated on quartz base plate and is obtained the silicon dioxide film for including quantum dot;
(3) silicon dioxide film for including silver telluride quantum dot is etched into using reactive ion etching method and includes telluride silver content
The silica periodic optical grating of son point.
The utility model has the advantages that silver telluride quantum dot is monocline crystal phase, minimum quantum state only has 2 to spin again degeneracy, can be realized low
The near infrared light gain of threshold value.
The photo and thermal stability of silica is much higher than organic polymer.Perhydropolysilazane is a kind of novel coating material
Material, can be converted into inorganic silicon dioxide at room temperature in atmospheric atmosphere.The mixing of spin coating quantum dot and Perhydropolysilazane
Liquid can obtain the silica membrane for including quantum dot of high quality, for the distributed feedback quanta dot laser for preparing high stability
Device provides condition.
The present invention substitutes the heavy degeneracy of minimum quantum state 8 using the silver telluride quantum dot of the 2 weight degeneracy of minimum quantum state of low toxicity
Lead salt quantum dot, to realize the near infrared light gain of Low threshold.The photo and thermal stability of silica is much higher than organic polymer.
With the silica membrane manufacturing cycle grating for including silver telluride quantum dot, Low threshold, high stability and ring can be finally obtained
The distributed feed-back near-infrared quantum dot laser of border close friend.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of silver telluride quantum dot;
Fig. 2 is the structural schematic diagram for including the distributed feedback laser of silver telluride quantum dot.
In figure: 1- silver telluride quantum dot, 2- quartz base plate, 3- include the silica periodic optical grating of silver telluride quantum dot.
Specific embodiment
Further explanation is done to the present invention with reference to the accompanying drawing.
As shown in Fig. 2, the distributed feedback laser for including silver telluride quantum dot of the invention, including what is be arranged upwards in turn
Quartz base plate 2, the silica periodic optical grating 3 for including silver telluride quantum dot.
The silica periodic optical grating 3 of silver telluride quantum dot is included by silica periodic optical grating and is embedded in the silica
Silver telluride quantum dot 1 in periodic optical grating forms.Silver telluride quantum dot 1 is uniformly distributed in silica periodic optical grating.Telluride
Silver-colored quantum dot 1 is as shown in Figure 1.Silver telluride quantum dot 1 is optical gain medium, and less toxic minimum quantum state only has 2 to spin again degeneracy
Silver telluride quantum dot 1 can be realized the near infrared light gain of Low threshold.The photo and thermal stability of silica is poly- much higher than organic
Object is closed, silver telluride quantum dot 1 is embedded in and can be improved the stability for including the distributed feedback laser of quantum dot in silica
And the service life.Have benefited from including the Bragg diffraction of the silica periodic optical grating of quantum dot, light field is including silver telluride quantum dot
Silica periodic optical grating 3 in vibrate and amplification.
The preparation method of the distributed feedback laser for including silver telluride quantum dot of the invention, comprising the following steps:
(1) silver telluride quantum dot is prepared using high temperature thermal decomposition method;
(2) it disperses the silver telluride quantum dot that step (1) obtains in toluene by the mass ratio of 1:5, then presses the quality of 1:1
Than mixing the toluene dispersion liquid of silver telluride quantum dot with Perhydropolysilazane, it is then spin coated on quartz base plate to be included
The silicon dioxide film of quantum dot;
(3) silicon dioxide film for including silver telluride quantum dot is etched into using reactive ion etching method and includes telluride silver content
The silica periodic optical grating of son point.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of distributed feedback laser for including silver telluride quantum dot, it is characterised in that: including the quartz being arranged upwards in turn
Substrate (2), the silica periodic optical grating (3) for including silver telluride quantum dot.
2. the distributed feedback laser according to claim 1 for including silver telluride quantum dot, it is characterised in that: described to include
The silica periodic optical grating (3) of silver telluride quantum dot is by silica periodic optical grating and is embedded in the silica periodic optical grating
Silver telluride quantum dot (1) composition.
3. the distributed feedback laser according to claim 2 for including silver telluride quantum dot, it is characterised in that: the telluride
Silver-colored quantum dot (1) is uniformly distributed in silica periodic optical grating.
4. the distributed feedback laser according to claim 1 for including silver telluride quantum dot, it is characterised in that: the telluride
Silver-colored quantum dot (1) is used as optical gain medium.
5. a kind of preparation method for the distributed feedback laser for including silver telluride quantum dot, it is characterised in that: the following steps are included:
(1) silver telluride quantum dot is prepared using high temperature thermal decomposition method;
(2) disperse the silver telluride quantum dot that step (1) obtains in toluene, then by the toluene dispersion liquid of silver telluride quantum dot with
Perhydropolysilazane mixing, is then spin coated on quartz base plate and obtains the silicon dioxide film for including quantum dot;
(3) silicon dioxide film for including silver telluride quantum dot is etched into using reactive ion etching method and includes silver telluride quantum dot
Silica periodic optical grating.
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
CN104861864A (en) * | 2014-02-20 | 2015-08-26 | 韩国科学技术研究院 | Coating composisiotn having polysilazane and wavelength converting agent and wavelength converting sheet prepared using the same |
CN105264042A (en) * | 2013-06-05 | 2016-01-20 | 柯尼卡美能达株式会社 | Optical material, optical film, and light-emitting device |
CN106199789A (en) * | 2015-07-22 | 2016-12-07 | 宁波激智科技股份有限公司 | A kind of prism film of stimulated luminescence |
CN106190126A (en) * | 2015-05-04 | 2016-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Single dispersing near-infrared silver telluride quantum dot and preparation method thereof |
CN107221837A (en) * | 2017-05-24 | 2017-09-29 | 北京大学 | A kind of preparation method of the micro- disk of water droplet method colloid quantum dot |
CN107332106A (en) * | 2017-08-01 | 2017-11-07 | 复旦大学 | Total silicon distributed feedback laser |
-
2018
- 2018-10-15 CN CN201811193785.3A patent/CN109286132A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
CN105264042A (en) * | 2013-06-05 | 2016-01-20 | 柯尼卡美能达株式会社 | Optical material, optical film, and light-emitting device |
CN104861864A (en) * | 2014-02-20 | 2015-08-26 | 韩国科学技术研究院 | Coating composisiotn having polysilazane and wavelength converting agent and wavelength converting sheet prepared using the same |
CN106190126A (en) * | 2015-05-04 | 2016-12-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Single dispersing near-infrared silver telluride quantum dot and preparation method thereof |
CN106199789A (en) * | 2015-07-22 | 2016-12-07 | 宁波激智科技股份有限公司 | A kind of prism film of stimulated luminescence |
CN107221837A (en) * | 2017-05-24 | 2017-09-29 | 北京大学 | A kind of preparation method of the micro- disk of water droplet method colloid quantum dot |
CN107332106A (en) * | 2017-08-01 | 2017-11-07 | 复旦大学 | Total silicon distributed feedback laser |
Non-Patent Citations (1)
Title |
---|
廖晨: "《金属表面、光学多层膜和谐振腔对量子点光学性质的调制特性研究》", 《中国博士学位论文全文数据库》 * |
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Application publication date: 20190129 |